JPWO2019044177A1 - パワー半導体装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 79
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000004020 conductor Substances 0.000 claims abstract description 112
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 22
- 238000003825 pressing Methods 0.000 claims abstract description 16
- 239000003566 sealing material Substances 0.000 claims abstract description 8
- 238000007789 sealing Methods 0.000 claims description 21
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 abstract description 12
- 239000011347 resin Substances 0.000 description 20
- 229920005989 resin Polymers 0.000 description 20
- 238000000465 moulding Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000010931 gold Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
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Abstract
Description
図4(b)は、形成前の第3導体部102をプレス機に配置された状態の断面図である。
Claims (10)
- 第1面及び当該第1面とは反対側に設けられる第2面を有する導電部材と、接合材を介して前記導電部材と接続されるパワー半導体素子と、を備えるパワー半導体装置の製造方法であって、
前記第1面の一部を押圧して当該第1面と面一となる部分を残して凹部を形成させ、前記第2面に凸部を形成させるように当該導体部材をプレスさせる第1工程と、
前記パワー半導体素子を前記凸部の頂面であって前記第1面の前記凹部及び当該凹部が形成されていない部分と対向するように配置し、前記接合材を介して当該凸部と前記パワー半導体素子を接続する第2工程と、
前記少なくとも前記凹部に封止材を充填する第3工程と、を備えるパワー半導体装置の製造方法。 - 請求項1に記載されたパワー半導体装置の製造方法であって、
前記第1工程は、前記導電部材を塑性流動させた後に前記凸部の頂面に形成された突起部の高さを低くする工程を含むパワー半導体装置の製造方法。 - 請求項2に記載されたパワー半導体装置の製造方法であって、
前記凸部の頂面に形成された前記突起部の高さをプレス工程により低くするパワー半導体装置の製造方法。 - 請求項1ないし3に記載されたいずれかのパワー半導体装置の製造方法であって、
前記第3工程は、前記導電部材の前記第1面に前記封止材を覆わせ、かつ前記凹部内の前記封止材を残すように当該封止材を除去するパワー半導体装置の製造方法。 - 請求項2に記載されたパワー半導体装置の製造方法であって、
前記第1工程において、
前記第1面側の前記凹部が第1凹部と第2凹部が形成され、かつ、前記突起部が前記第1凹部と前記第2凹部の間の空間と対向するように形成されるパワー半導体装置の製造方法。 - 請求項1ないし5に記載されたいずれかのパワー半導体装置の製造方法であって、
前記第1工程において、
前記導電部材の縁部から伸びる端子をプレス加工により形成する工程を含むパワー半導体装置の製造方法。 - 請求項6に記載されたパワー半導体装置の製造方法であって、
前記導電部材は、インバータ回路の上アーム回路を構成するパワー半導体素子を挟む第1導体部材及び第3導体部材と、当該インバータ回路の下アーム回路を構成するパワー半導体素子を挟む第2導体部材及び第4導体部材と、
前記第3導体部材は、前記端子を形成し、
前記端子は、前記第2導体部材の一部と対向しかつ当該第2導体部材と接続されるパワー半導体装置の製造方法。 - 請求項7に記載されたパワー半導体装置の製造方法であって、
前記端子は、前記第2面と面一で形成される非プレス面と、当該非プレス面とは高さが異なりかつプレスにより形成されるプレス面と、を形成し、
前記非プレス面は、前記プレス面よりも大きいパワー半導体装置の製造方法。 - 請求項6に記載されたパワー半導体装置の製造方法であって、
前記端子は、前記パワー半導体素子に流れる電流を伝達する主端子を形成するパワー半導体装置の製造方法。 - パワー半導体素子と、
第1面及び当該第1面とは反対側に設けられる第2面を有する導体部と、
前記パワー半導体素子と前記導体部を接続する半田材と、
前記導体部を封止する封止材と、を備え、
前記導体部は、前記第2面よりも突出しかつ前記第1面よりも凹む第1領域と、当該第1領域の前記凹みの底面よりも突出する第2領域と、を有し、
前記パワー半導体素子の電極面の直角方向から見たとき、前記パワー半導体素子は、前記第1領域及び前記第2領域の両方と重なっており、
前記パワー半導体素子は、前記はんだを介して前記第1領域及び前記第2領域と接続され、
前記封止材の一部は、前記第1領域の凹部に充填されるパワー半導体装置。
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JP2017164994 | 2017-08-30 | ||
JP2017164994 | 2017-08-30 | ||
PCT/JP2018/025813 WO2019044177A1 (ja) | 2017-08-30 | 2018-07-09 | パワー半導体装置及びその製造方法 |
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KR102661400B1 (ko) | 2022-11-29 | 2024-04-26 | 주식회사 엠디엠 | 열전 플레이트 및 이를 포함하는 반도체 패키지 |
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JP2005012163A (ja) * | 2003-05-26 | 2005-01-13 | Denso Corp | 半導体装置 |
JP2007006575A (ja) * | 2005-06-22 | 2007-01-11 | Denso Corp | 三相インバータ装置 |
JP2013027203A (ja) * | 2011-07-22 | 2013-02-04 | Hitachi Automotive Systems Ltd | 電力変換装置 |
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JP2013219194A (ja) * | 2012-04-09 | 2013-10-24 | Sansha Electric Mfg Co Ltd | 半導体装置 |
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JP3176028B2 (ja) * | 1995-10-13 | 2001-06-11 | 松下電工株式会社 | フリップチップ実装方法及びフリップチップ実装構造 |
JP3351324B2 (ja) * | 1997-11-28 | 2002-11-25 | 松下電器産業株式会社 | バンプ付電子部品の製造方法 |
US6208020B1 (en) * | 1999-02-24 | 2001-03-27 | Matsushita Electronics Corporation | Leadframe for use in manufacturing a resin-molded semiconductor device |
JP3466145B2 (ja) * | 2000-09-29 | 2003-11-10 | 沖電気工業株式会社 | 半導体装置とその製造方法 |
US6828661B2 (en) * | 2001-06-27 | 2004-12-07 | Matsushita Electric Industrial Co., Ltd. | Lead frame and a resin-sealed semiconductor device exhibiting improved resin balance, and a method for manufacturing the same |
JP2003204027A (ja) | 2002-01-09 | 2003-07-18 | Matsushita Electric Ind Co Ltd | リードフレーム及びその製造方法、樹脂封止型半導体装置及びその製造方法 |
JP2006318996A (ja) * | 2005-05-10 | 2006-11-24 | Matsushita Electric Ind Co Ltd | リードフレームおよび樹脂封止型半導体装置 |
US8174096B2 (en) * | 2006-08-25 | 2012-05-08 | Asm Assembly Materials Ltd. | Stamped leadframe and method of manufacture thereof |
JP5427745B2 (ja) | 2010-09-30 | 2014-02-26 | 日立オートモティブシステムズ株式会社 | パワー半導体モジュール及びその製造方法 |
KR101574135B1 (ko) * | 2013-10-10 | 2015-12-03 | (주)포인트엔지니어링 | 칩 실장 방법 및 칩 패키지 |
DE112017007982B4 (de) * | 2017-08-25 | 2023-07-06 | Mitsubishi Electric Corporation | Leistungs-Halbleitervorrichtung und Herstellungsverfahren einer Leistungs-Halbleitervorrichtung |
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- 2018-07-09 JP JP2019539024A patent/JP6966558B2/ja active Active
- 2018-07-09 DE DE112018003393.7T patent/DE112018003393B4/de active Active
- 2018-07-09 WO PCT/JP2018/025813 patent/WO2019044177A1/ja active Application Filing
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005012163A (ja) * | 2003-05-26 | 2005-01-13 | Denso Corp | 半導体装置 |
JP2007006575A (ja) * | 2005-06-22 | 2007-01-11 | Denso Corp | 三相インバータ装置 |
JP2013027203A (ja) * | 2011-07-22 | 2013-02-04 | Hitachi Automotive Systems Ltd | 電力変換装置 |
JP2013059790A (ja) * | 2011-09-13 | 2013-04-04 | Hitachi Automotive Systems Ltd | 金属板の接合構造および金属板の接合方法 |
JP2013219194A (ja) * | 2012-04-09 | 2013-10-24 | Sansha Electric Mfg Co Ltd | 半導体装置 |
Also Published As
Publication number | Publication date |
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CN111052584A (zh) | 2020-04-21 |
WO2019044177A1 (ja) | 2019-03-07 |
DE112018003393T5 (de) | 2020-03-12 |
US20200258823A1 (en) | 2020-08-13 |
CN111052584B (zh) | 2023-07-11 |
DE112018003393B4 (de) | 2023-05-04 |
JP6966558B2 (ja) | 2021-11-17 |
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