JP7433480B2 - パワー半導体装置およびその製造方法ならびに電力変換装置 - Google Patents

パワー半導体装置およびその製造方法ならびに電力変換装置 Download PDF

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Publication number
JP7433480B2
JP7433480B2 JP2022576650A JP2022576650A JP7433480B2 JP 7433480 B2 JP7433480 B2 JP 7433480B2 JP 2022576650 A JP2022576650 A JP 2022576650A JP 2022576650 A JP2022576650 A JP 2022576650A JP 7433480 B2 JP7433480 B2 JP 7433480B2
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Prior art keywords
heat sink
module
uneven
power semiconductor
power
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JP2022576650A
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Japanese (ja)
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JPWO2022158392A1 (https=
JPWO2022158392A5 (https=
Inventor
泰之 三田
正喜 後藤
隼人 寺田
穂隆 六分一
晴菜 多田
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of JPWO2022158392A5 publication Critical patent/JPWO2022158392A5/ja
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
    • H05K7/209—Heat transfer by conduction from internal heat source to heat radiating structure
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
    • H05K7/20409—Outer radiating structures on heat dissipating housings, e.g. fins integrated with the housing
    • H05K7/20418—Outer radiating structures on heat dissipating housings, e.g. fins integrated with the housing the radiating structures being additional and fastened onto the housing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/01—Manufacture or treatment
    • H10W40/03—Manufacture or treatment of arrangements for cooling
    • H10W40/037—Assembling together parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/02—Manufacture or treatment of conductive package substrates serving as an interconnection, e.g. of metal plates
    • H10W70/027—Mechanical treatments, e.g. deforming, punching or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/016—Manufacture or treatment using moulds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2022576650A 2021-01-22 2022-01-14 パワー半導体装置およびその製造方法ならびに電力変換装置 Active JP7433480B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021008385 2021-01-22
JP2021008385 2021-01-22
PCT/JP2022/001154 WO2022158392A1 (ja) 2021-01-22 2022-01-14 パワー半導体装置およびその製造方法ならびに電力変換装置

Publications (3)

Publication Number Publication Date
JPWO2022158392A1 JPWO2022158392A1 (https=) 2022-07-28
JPWO2022158392A5 JPWO2022158392A5 (https=) 2023-09-05
JP7433480B2 true JP7433480B2 (ja) 2024-02-19

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JP2022576650A Active JP7433480B2 (ja) 2021-01-22 2022-01-14 パワー半導体装置およびその製造方法ならびに電力変換装置

Country Status (4)

Country Link
US (1) US12477704B2 (https=)
JP (1) JP7433480B2 (https=)
CN (1) CN116762170A (https=)
WO (1) WO2022158392A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWM630490U (zh) * 2022-05-06 2022-08-01 藍天電腦股份有限公司 散熱模組
CN119183607A (zh) * 2022-05-16 2024-12-24 三菱电机株式会社 功率模块、功率模块的制造方法及电力变换装置
CN120981919A (zh) * 2023-04-11 2025-11-18 三菱电机株式会社 半导体装置及其制造方法以及电力转换装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011155118A (ja) 2010-01-27 2011-08-11 Hitachi Ltd ヒートシンク取付体およびヒートシンク取付け方法
JP2013165122A (ja) 2012-02-09 2013-08-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2014179394A (ja) 2013-03-14 2014-09-25 Mitsubishi Electric Corp 半導体装置
WO2018079396A1 (ja) 2016-10-31 2018-05-03 三菱電機株式会社 半導体装置およびその製造方法
WO2018097027A1 (ja) 2016-11-24 2018-05-31 三菱電機株式会社 半導体装置およびその製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH065750A (ja) 1992-06-19 1994-01-14 Hitachi Ltd 半導体素子の冷却機構
JP3552047B2 (ja) * 2000-10-25 2004-08-11 古河電気工業株式会社 ヒートシンク、その製造方法、および、押圧治具
TW200707676A (en) * 2005-08-09 2007-02-16 Chipmos Technologies Inc Thin IC package for improving heat dissipation from chip backside
WO2011061779A1 (ja) 2009-11-17 2011-05-26 三菱電機株式会社 放熱機器及び放熱機器の製造方法
JP5373688B2 (ja) 2010-04-06 2013-12-18 三菱電機株式会社 ヒートシンク及びヒートシンク一体型パワーモジュール
JP5432085B2 (ja) 2010-08-24 2014-03-05 三菱電機株式会社 電力半導体装置
WO2013114647A1 (ja) * 2012-01-31 2013-08-08 三菱電機株式会社 半導体装置とその製造方法
JP6009209B2 (ja) 2012-04-26 2016-10-19 三菱電機株式会社 ヒートシンクの製造方法およびヒートシンク一体型半導体モジュールの製造方法
DE102012105110A1 (de) * 2012-06-13 2013-12-19 Osram Opto Semiconductors Gmbh Montageträger und Verfahren zur Montage eines Montageträgers auf einem Anschlussträger
CN103703562B (zh) 2012-07-31 2015-08-26 三菱电机株式会社 功率半导体装置
US9892992B2 (en) * 2013-09-27 2018-02-13 Mitsubishi Electric Corporation Swaged heat sink and heat sink integrated power module
DE112013007667T5 (de) * 2013-12-05 2016-08-25 Mitsubishi Electric Corporation Leistungshalbleitervorrichtung
JP6503224B2 (ja) * 2015-05-19 2019-04-17 Ａｐｓジャパン株式会社 ヒートシンク
WO2020261730A1 (ja) 2019-06-25 2020-12-30 Ｎｇｋエレクトロデバイス株式会社 パッケージ、および、パワー半導体モジュールの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011155118A (ja) 2010-01-27 2011-08-11 Hitachi Ltd ヒートシンク取付体およびヒートシンク取付け方法
JP2013165122A (ja) 2012-02-09 2013-08-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2014179394A (ja) 2013-03-14 2014-09-25 Mitsubishi Electric Corp 半導体装置
WO2018079396A1 (ja) 2016-10-31 2018-05-03 三菱電機株式会社 半導体装置およびその製造方法
WO2018097027A1 (ja) 2016-11-24 2018-05-31 三菱電機株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
CN116762170A (zh) 2023-09-15
JPWO2022158392A1 (https=) 2022-07-28
US12477704B2 (en) 2025-11-18
US20240074122A1 (en) 2024-02-29
WO2022158392A1 (ja) 2022-07-28

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