WO2021164467A1 - 显示装置、显示面板及其制造方法 - Google Patents

显示装置、显示面板及其制造方法 Download PDF

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Publication number
WO2021164467A1
WO2021164467A1 PCT/CN2021/071273 CN2021071273W WO2021164467A1 WO 2021164467 A1 WO2021164467 A1 WO 2021164467A1 CN 2021071273 W CN2021071273 W CN 2021071273W WO 2021164467 A1 WO2021164467 A1 WO 2021164467A1
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WIPO (PCT)
Prior art keywords
layer
substrate
light
isolation
area
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PCT/CN2021/071273
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English (en)
French (fr)
Inventor
胡静
樊浩原
王子峰
徐海峰
谢艳春
唐俊杰
李易峰
Original Assignee
京东方科技集团股份有限公司
绵阳京东方光电科技有限公司
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Priority to US17/429,241 priority Critical patent/US20220310724A1/en
Publication of WO2021164467A1 publication Critical patent/WO2021164467A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/88—Dummy elements, i.e. elements having non-functional features
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to a display device, a display panel, and a manufacturing method of the display panel.
  • OLED Organic Light-Emitting Diode, organic light-emitting diode
  • the purpose of the present disclosure is to provide a display device, a display panel and a manufacturing method thereof.
  • a display panel including:
  • a substrate having an opening area, a transition area surrounding the opening area, and a display area surrounding the transition area;
  • a driving layer is provided on one side of the substrate and covers the display area and the transition area, and the portion of the driving layer located in the transition area includes a light-reflecting layer surrounding the opening area;
  • the isolation column is arranged on the surface of the driving layer away from the substrate and is located in the transition area, the isolation column surrounds the opening area, and the contour line of the projection of the isolation column on the substrate is located at the
  • the light-reflecting layer is inside the contour line of the projection of the substrate; the side wall of the isolation column is provided with a groove;
  • the through hole penetrates the driving layer and the light emitting device layer and is located in the opening area.
  • an area of the driving layer corresponding to the light-reflecting layer is formed with a boss that matches the shape of the light-reflecting layer, and the isolation column is provided on the boss away from the substrate. s surface.
  • a portion of the driving layer corresponding to the isolation pillar has multiple layers of the light reflecting layer.
  • the outline of the projection of the light-reflective layer that is away from the substrate on the substrate is The line is located inside the contour line of the projection of the reflective layer close to the substrate on the substrate.
  • the distance between the contour line of the projection of the reflective layer on the substrate and the contour line of the projection of the spacer on the substrate is greater than 1 ⁇ m.
  • the number of the isolation pillars is multiple, and each of the isolation pillars is arranged concentrically around the opening area;
  • a portion of the driving layer corresponding to each of the isolation pillars has multiple layers of the light reflecting layer.
  • a portion of the driving layer corresponding to the isolation pillar has two layers of the light reflecting layer;
  • the driving layer includes a thin film transistor and a capacitor electrode in the display area, and a gate of the thin film transistor and the capacitor electrode form a storage capacitor;
  • the gate is arranged in the same layer as one of the light-reflecting layers, the capacitor electrode is arranged in the same layer as the other light-reflecting layer, and the source and drain of the thin film transistor and the isolation pillar are arranged in the same layer.
  • the isolation pillar includes a first metal layer, a second metal layer, and a third metal layer that are sequentially stacked in a direction away from the substrate. Both the outer edge and the outer edge of the third metal layer protrude from the outer edge of the second metal layer to form the groove on the sidewall of the isolation column; the first metal layer, the first metal layer and the second metal layer At least one of the second metal layer and the third metal layer includes a reflective metal material.
  • the material of the first metal layer and the third metal layer includes titanium, and the material of the second metal layer includes aluminum.
  • a method of manufacturing a display panel including:
  • the substrate having an opening region, a transition region surrounding the opening region, and a display region surrounding the transition region;
  • an isolation pillar located in the transition area and surrounding the opening area is formed. Inside the contour line of the projection of the bottom, the side wall of the isolation column is provided with a groove;
  • the light emitting device layer includes a light emitting layer, and the light emitting layer is discontinuous at the groove;
  • a through hole penetrating the driving layer and the light emitting device layer is formed in the opening area.
  • a portion of the driving layer corresponding to the isolation pillar has multiple layers of the light reflecting layer.
  • a portion of the driving layer corresponding to the isolation pillar in a direction perpendicular to the substrate, has a first light reflecting layer and a second light reflecting layer;
  • Forming a driving layer covering the display area and the transition area on one side of the substrate includes:
  • a source-drain layer is formed on the side of the dielectric layer away from the substrate, and the source-drain layer includes a source electrode and a drain electrode connected to the active layer.
  • the isolation pillars and the source and drain layers are formed by the same patterning process, and the isolation pillars are located on the surface of the boss away from the substrate.
  • a display device including the display panel described in any one of the above.
  • FIG. 1 is a partial schematic diagram of a display panel in the related art.
  • FIG. 2 is a top view of an embodiment of the display panel of the present disclosure.
  • Fig. 3 is a cross-sectional view taken along the line A-A in Fig. 2.
  • FIG. 4 is a top view of the isolation column in an embodiment of the display panel of the present disclosure.
  • FIG. 5 is a top view of the isolation column in another embodiment of the display panel of the present disclosure.
  • FIG. 6 is a flowchart of an embodiment of the manufacturing method of the present disclosure.
  • FIG. 7 is a schematic diagram of step S130 in an embodiment of the manufacturing method of the present disclosure.
  • Display panel 1. Substrate; 101. Perforated area; 102. Transition area; 103. Display area; 2. Drive layer; 201. Light reflecting layer; 201a, first light reflecting layer; 201b, second light reflecting layer; 202. Boss; 21. Active layer; 22. Gate insulation layer; 23. Gate; 24. Insulation layer; 25. Capacitance electrode; 26. Dielectric layer; 27. Source; 28. Drain; 3. Isolation pillar; 301, groove; 31, first metal layer; 32, second metal layer; 33, third metal layer; 3a, first isolation pillar; 3b, second isolation pillar; 4. light emitting device layer; 401 , Light-emitting layer; 402, first electrode; 403, second electrode; 5. through hole; 6, flat layer; 7, pixel defining layer; 8. filling layer.
  • the display panel has a display area, a transition area, and an opening area.
  • the transition area surrounds the opening area, and the display area surrounds the transition area.
  • the opening area can be provided with through holes for setting cameras and other devices.
  • FIG. 1 shows a part of the display panel, namely the transition area.
  • the transition area may include a substrate 1a, a driving layer 2a, and an isolation pillar 3a provided on the side of the driving layer 2a away from the substrate 1a.
  • the inner and outer side walls of 3a are provided with grooves 31a.
  • the spacer 3a when the spacer 3a is formed, photoresist may remain in the groove 31a.
  • the spacer 3a is filled so that the light-emitting layer cannot be disconnected at the groove 31a, so that it is difficult to block the path of water and oxygen from eroding the display area along the light-emitting layer.
  • grooves 21a are also provided on both sides of the isolation column 3a to further block the light-emitting layer, but the driving layer 2a needs to be grooved, which increases the process difficulty.
  • Embodiments of the present disclosure provide a display panel, which may be an OLED display panel, which may be provided with a through hole for installing a camera or other devices, the through hole is surrounded by a transition area, and the transition area is surrounded by a display area that can emit light .
  • the display panel 100 of the embodiment of the present disclosure may include a substrate 1, a driving layer 2, an isolation pillar 3, a light emitting device layer 4, and a through hole 5, wherein:
  • the substrate 1 has an opening area 101, a transition area 102 surrounding the opening area 101, and a display area 103 surrounding the transition area 102.
  • the driving layer 2 is provided on the side of the substrate 1 and covers the display area 103 and the transition area 102.
  • the portion of the driving layer 2 located in the transition area 102 includes a reflective layer 201 surrounding the opening area 101.
  • the isolation column 3 is provided on the surface of the driving layer 2 away from the substrate 1 and located in the transition region 102.
  • the isolation column 3 surrounds the opening area 101.
  • the side wall of the isolation column 3 is provided with a groove 301.
  • the light-emitting device layer 4 covers the driving layer 2 and the isolation pillar 3.
  • the light-emitting device layer 4 includes a light-emitting layer 401, and the light-emitting layer 401 is discontinuous at the groove 301.
  • the through hole 5 penetrates the driving layer 2 and the light emitting device layer 4 and is located in the opening area 101.
  • the light-emitting layer 401 of the light-emitting device layer 4 is separated by the groove 301, blocking the path of water and oxygen at the through hole 5 to the display area 103, thereby preventing the light-emitting device layer 4 of the display area 103 from being damaged. erosion.
  • the contour line of the projection of the spacer 3 on the substrate 1 is located inside the contour line of the projection of the reflective layer 201 on the substrate 1, so that the edge of the reflective layer 201 exceeds the edge of the spacer 3, and the excess part can be turned away
  • the direction of the substrate 1 reflects light, so that the groove 301 on the side wall of the isolation column 3 can be illuminated by light, and the groove 301 is prevented from being filled with residual photoresist, so that the groove 301 can block the light-emitting layer 401 and the isolation column 3 It can block the water and oxygen erosion path and improve the display effect.
  • the blocking effect on the light-emitting layer 401 is improved, it is possible to avoid special partition grooves for partitioning the light-emitting layer 401 at the positions of the driving layer 2 located on both sides of the isolation column 3.
  • the substrate 1 can be divided into a plurality of regions, including an opening region 101, a transition region 102, and a display region 103.
  • the transition region 102 surrounds the opening region 101 and the display region 103 surrounds the transition region. 102.
  • the opening area 101 corresponds to the opening area of the display panel 100
  • the transition area 102 corresponds to the transition area of the display panel 100
  • the display area 103 corresponds to the display area of the display panel 100.
  • the substrate 1 may be a single-layer or multi-layer structure.
  • the substrate 1 may include a glass substrate and a buffer layer on the glass substrate, and the material of the buffer layer may include silicon nitride, silicon oxide, and the like.
  • the driving layer 2 is provided on the side of the substrate 1.
  • the driving layer 2 is provided on the surface of the buffer layer away from the glass substrate.
  • the driving layer 2 covers the display area 103 and the transition area 102.
  • the portion of the driving layer 2 located in the transition area 102 includes a light-reflecting layer 201, and the light-reflecting layer 201 may have a ring structure, which may be arranged around the opening area 101.
  • the material of the light-reflecting layer 201 includes opaque metal or other light-reflecting materials, so that light can be reflected toward the side away from the substrate 1.
  • the isolation column 3 is disposed on the surface of the driving layer 2 away from the substrate 1 and located in the transition region 102, and the isolation column 3 may be a ring structure and is disposed around the opening region 101.
  • the side wall is provided with a groove 301, that is, at least one of the inner wall and the outer wall of the ring structure is provided with a groove 301.
  • the contour line of the projection of the spacer 3 on the substrate 1 is located inside the contour line of the projection of the reflective layer 201 on the substrate 1, so that the edge of the reflective layer 201 extends beyond the edge of the spacer 3, and the excess part can face away from the substrate 1.
  • Reflecting light on one side at least part of the light can be reflected into the groove 301. If the photoresist is a positive photoresist, the light reflected by the reflective layer 201 can expose the photoresist in the groove 301, so that Development is performed to remove the photoresist and prevent the remaining photoresist from filling the groove 301 to ensure that the light-emitting layer 401 is discontinuous at the groove 301.
  • the region of the driving layer 2 corresponding to the reflective layer 201 can form a boss 202 that matches the shape of the reflective layer 201, and the spacer 3 can be It is arranged on the surface of the boss 202 away from the substrate 1, so that the isolation column 3 can be raised by the reflective layer 201, and the gap between the isolation column 3 and the driving layer 2 is increased, making it difficult for the light emitting layer 401 to cover the side of the isolation column 3
  • the wall enhances the blocking effect of the spacer 3 on the light-emitting layer 401.
  • the portion of the driving layer 2 corresponding to the same isolation column 3 may have multiple reflective layers 201, for example, two reflective layers 201, thereby facilitating the use of The height of the boss 202 is increased, and the isolation column 3 is further raised.
  • the contour line of the projection of the reflective layer 201 on the substrate 1 away from the substrate 1 is inside the contour line of the projection of the substrate 1, that is, the area of the reflective layer 201 decreases in the direction away from the substrate 1, so that each reflective layer 201 can face away from One side of the substrate 1 reflects light, which is beneficial to increase the light entering the groove 301 and further reduce the photoresist residue.
  • the distance L between the contour line of the projection of the reflective layer 201 on the substrate 1 and the contour line of the projection of the spacer 3 on the substrate 1 is greater than 1 ⁇ m, that is, The difference between the width of the cross section of the reflective layer 201 and the width of the cross section of the spacer 3 is greater than 1 ⁇ m, so as to ensure that enough light is reflected into the groove 301.
  • the number of isolation pillars 3 may be multiple, and the sizes of the isolation pillars 3 are different, and they are arranged concentrically around the opening region 101, thereby increasing the resistance to the light-emitting layer 401.
  • the isolation pillar 3 includes a first isolation pillar 3a and a second isolation pillar 3b, the first isolation pillar 3a surrounds the opening region 101, and the second isolation pillar 3b surrounds the first isolation pillar 3a.
  • a filling layer 8 can be arranged between the first isolation column 3a and the second isolation column 3b to separate the first isolation column 3a and the second isolation column 3b.
  • the portion of the drive layer 2 corresponding to each isolation column 3 has multiple reflective layers 201, that is, the side of each isolation column 3 close to the substrate 1 has multiple layers.
  • the light-reflecting layer 201 for example, two light-reflecting layers 201.
  • the number of isolation pillars 3 may also be one.
  • the portion of the driving layer 2 corresponding to the same isolation pillar 3 may also have only one layer of reflective ⁇ 201 ⁇ Layer 201.
  • the portion of the driving layer 2 corresponding to the same isolation pillar 3 has two reflective layers 201.
  • the driving layer 2 includes a thin film transistor and a capacitor electrode in the display area 103, and the capacitor electrode faces the gate of the thin film transistor and forms a storage capacitor.
  • the gate of the thin film transistor and one reflective layer 201 are arranged in the same layer, so that the two reflective layers 201 can be formed at the same time as the gate and the capacitor electrode of the thin film transistor, respectively, thereby simplifying the process.
  • the source, drain, and isolation pillars 3 of the thin film transistor are arranged in the same layer, so that the source, drain, and isolation pillars 3 are formed at the same time, thereby simplifying the process.
  • the thin film transistor has a top gate structure
  • the driving layer 2 includes an active layer 21, a gate insulating layer 22, a gate 23, an insulating layer 24, and a capacitor electrode which are sequentially stacked on one side of the substrate 1. 25.
  • the dielectric layer 26 and the source-drain layer, the active layer 21, the gate 23 and the capacitor electrode 25 are directly opposite in the direction perpendicular to the substrate 1.
  • the source-drain layer includes a source electrode 27 and a drain electrode 28, and is connected to Both ends of the active layer 21.
  • the portion of the driving layer 2 corresponding to the same isolation column 3 also has two reflective layers 201, including a first reflective layer 201a and a second reflective layer 201b.
  • the gate 23 and the first reflective layer 201a are arranged in the same layer, and the capacitor electrode 25 and the
  • the two light reflecting layers 201b are arranged in the same layer, and the first light reflecting layer 201a and the second light reflecting layer 201b are separated by the stacked gate insulating layer 22 and the insulating layer 24.
  • the source and drain layers and the isolation pillars 3 are arranged in the same layer so as to be formed by a patterning process.
  • the spacer 3 includes a first metal layer 31, a second metal layer 32, and a third metal layer 33 that are sequentially stacked in a direction away from the substrate 1.
  • the first metal The outer edge of the layer 31 and the outer edge of the third metal layer 33 both protrude from the outer edge of the second metal layer 32 to form a groove 301 on the sidewall of the isolation column 3, so that the cross section of the isolation column 3 is "work”. Glyph structure.
  • At least one of the first metal layer 31, the second metal layer 32, and the third metal layer 33 includes a reflective metal material, so as to achieve light reflection.
  • the material of the first metal layer 31 and the third metal layer 33 includes titanium
  • the material of the second metal layer 32 includes aluminum.
  • the source electrode 27 and the drain electrode 28 may also include three metal layers, which are arranged in the same layer corresponding to the first metal layer 31, the second metal layer 32, and the third metal layer 33 in a one-to-one correspondence, so as to be formed at the same time.
  • the light-emitting device layer 4 covers the driving layer 2 and the isolation pillar 3, and the light-emitting device layer 4 includes a light-emitting layer 401.
  • the material of the light-emitting layer 401 may include electro-organic light-emitting materials. Discontinuity at each location, thereby blocking the path of water and oxygen erosion.
  • the display panel 100 may further include a flat layer 6 provided in the display area 103 and covering the source and drain layers.
  • the light-emitting device layer 4 further includes a first electrode 402 and a second electrode 403.
  • the number of the first electrode 402 may be multiple, and is arranged on the side of the driving layer 2 away from the substrate 1, and the first electrode 402 is located in the display area 103
  • the first electrode 402 can be connected to the drain 28 of each thin film transistor in a one-to-one correspondence, and at the same time, the side of the driving layer 2 away from the substrate 1 can also be provided with a pixel defining layer 7 exposing each first electrode 402.
  • the light-emitting layer 401 is disposed on the surface of the first electrode 402 away from the substrate 1, extends to the transition region 102, covers the isolation pillar 3, and is disconnected at the groove 301.
  • the second electrode 403 is arranged on the surface of the light-emitting layer 401 away from the substrate 1, and a plurality of OLED light-emitting devices are formed by each of the first electrode 402, the light-emitting layer 401, and the second electrode 403, and each OLED light-emitting device can be driven by a thin film transistor. Glow.
  • the through hole 5 penetrates the driving layer 2 and the light emitting device layer 4, and is located in the opening area 101, so that electronic devices such as cameras and sensors can be arranged.
  • the shape of the through hole 5 is not particularly limited here.
  • the embodiments of the present disclosure provide a method for manufacturing a display panel, and the structure of the display panel can refer to the above-mentioned display panel embodiments, which will not be described in detail here.
  • the manufacturing method of the embodiment of the present disclosure may include step S110-step S150, wherein:
  • Step S110 providing a substrate, the substrate having an opening area, a transition area surrounding the opening area, and a display area surrounding the transition area;
  • Step S120 forming a driving layer covering the display area and the transition area on one side of the substrate, and the portion of the driving layer located in the transition area includes a light-reflecting layer surrounding the opening area;
  • Step S130 forming an isolation column located in the transition area and surrounding the opening area on the surface of the driving layer away from the substrate, and the contour line of the projection of the isolation column on the substrate is located at the surface of the reflective layer.
  • the side wall of the isolation column is provided with a groove;
  • Step S140 forming a light emitting device layer covering the driving layer and the isolation layer, the light emitting device layer includes a light emitting layer, and the light emitting layer is discontinuous at the groove;
  • Step S150 forming a through hole penetrating the driving layer and the light emitting device layer in the opening area.
  • the portion of the driving layer 2 corresponding to the isolation pillar 3 has a first light reflecting layer 201 a and a second light reflecting layer 201 b.
  • step S120 includes step S1210-step S1270, wherein:
  • Step S1210 forming an active layer in the display area on one side of the substrate
  • Step S1220 forming a gate insulating layer covering the active layer
  • Step S1230 forming a gate located in the display area and a first reflective layer located in the transition area on the side of the gate insulating layer away from the substrate through a patterning process;
  • Step S1240 forming an insulating layer covering the gate and the first reflective layer
  • Step S1250 forming a capacitor electrode facing the gate and a second light-reflecting layer facing the first light-reflecting layer on the surface of the insulating layer facing away from the substrate through a single patterning process;
  • Step S1260 forming a dielectric layer covering the capacitor electrode and the second light-reflecting layer, and the dielectric layer is formed with a boss in a region corresponding to the second light-reflecting layer;
  • Step S1270 forming a source-drain layer on the side of the dielectric layer away from the substrate, the source-drain layer including a source electrode and a drain electrode connected to the active layer.
  • the isolation pillar 3 and the source and drain layers are formed by the same patterning process, and the isolation pillar 3 is located on the surface of the boss 202 away from the substrate 1.
  • One patterning process may include one or more processes such as photolithography, printing, etc., which are not specifically limited here, as long as the isolation pillar 3 and the source and drain layers can be formed at the same time.
  • the isolation pillar 3 includes a first metal layer 31, a second metal layer 32, and a third metal layer 33 that are sequentially stacked in a direction away from the substrate 1; the source and drain layers may also include three metal layers, that is, the source electrode.
  • 27 and the drain 28 include three metal layers, wherein the first metal layer 31, the second metal layer 32, and the third metal layer 33 can be formed simultaneously with the three metal layers of the source and drain layers in a one-to-one correspondence.
  • the isolation pillar 3 and the source and drain layers can also be formed independently.
  • the display panel manufactured by the manufacturing method of the embodiment of the present disclosure please refer to the embodiment of the display panel, which will not be repeated here.
  • the embodiments of the present disclosure also provide a display device, which may include the display panel of any of the above-mentioned embodiments, and its structure and beneficial effects can refer to the above-mentioned embodiment of the display panel, which will not be described in detail here.
  • the display device of the embodiment of the present disclosure may be a device for displaying images, such as a mobile phone, a tablet computer, and a television, which will not be listed here.

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Abstract

一种显示装置、显示面板及其制造方法。该显示面板（100）包括衬底（1）、驱动层（2）、隔离柱（3）、发光器件层（4）和通孔（5），衬底（1）具有开孔区（101）、围绕开孔区（101）的过渡区（102）和围绕过渡区（102）的显示区（103）。驱动层（2）设于衬底（1）一侧，且覆盖显示区（103）和过渡区（102），驱动层（2）位于过渡区（102）的部分包括围绕开孔区（101）的反光层（201）。隔离柱（3）设于驱动层（2）背离衬底（1）的表面且位于过渡区（102），隔离柱（3）围绕开孔区（101），隔离柱（3）在衬底（1）的投影的轮廓线位于反光层（201）在衬底（1）的投影的轮廓线内侧；隔离柱（3）的侧壁设有凹槽（301）。发光器件层（4）覆盖驱动层（2）和隔离柱（3），发光器件层（4）包括发光层（401），发光层（4）在凹槽（301）处间断。通孔（5）贯穿驱动层（2）和发光器件层（4），且位于开孔区（101）。

Description

显示装置、显示面板及其制造方法
交叉引用
本公开要求于2020年2月20日提交的申请号为202010104934.5名称为“显示装置、显示面板及其制造方法”的中国专利申请的优先权，该中国专利申请的全部内容通过引用全部并入本文。
技术领域
本公开涉及显示技术领域，具体而言，涉及一种显示装置、显示面板及显示面板的制造方法。
背景技术
在手机、平板电脑等电子设备中，经常需要在显示面板中开孔，以便设置摄像头和传感器等电子器件。对于OLED(Organic Light-Emitting Diode，有机发光二极管)显示面板而言，外界的水氧可能会由开孔位置沿发光层进入显示面板内部，对显示面板内部造成侵蚀，而现有显示面板防止水氧侵蚀的效果有待提高，影响显示效果。
需要说明的是，在上述背景技术部分公开的信息仅用于加强对本公开的背景的理解，因此可以包括不构成对本领域普通技术人员已知的现有技术的信息。。
公开内容
本公开的目的在于提供一种显示装置、显示面板及其制造方法。
根据本公开的一个方面，提供一种显示面板，包括：
衬底，具有开孔区、围绕所述开孔区的过渡区和围绕所述过渡区的显示区；
驱动层，设于所述衬底一侧，且覆盖所述显示区和所述过渡区，所述驱动层位于所述过渡区的部分包括围绕所述开孔区的反光层；
隔离柱，设于所述驱动层背离所述衬底的表面且位于所述过渡区，所述隔离柱围绕所述开孔区，所述隔离柱在所述衬底的投影的轮廓线位 于所述反光层在所述衬底的投影的轮廓线内侧；所述隔离柱的侧壁设有凹槽；
发光器件层，覆盖所述驱动层和所述隔离柱，所述发光器件层包括发光层，所述发光层在所述凹槽处间断；
通孔，贯穿所述驱动层和所述发光器件层，且位于所述开孔区。
在本公开的一种示例性实施例中，所述驱动层对应于所述反光层的区域形成有与所述反光层形状匹配的凸台，所述隔离柱设于凸台背离所述衬底的表面。
在本公开的一种示例性实施例中，在垂直于所述衬底的方向上，所述驱动层对应于所述隔离柱的部分具有多层所述反光层。
在本公开的一种示例性实施例中，在垂直于所述衬底的方向上相邻的两层所述反光层中，背离所述衬底的反光层在所述衬底的投影的轮廓线位于靠近所述衬底的反光层在所述衬底的投影的轮廓线内侧。
在本公开的一种示例性实施例中，所述反光层在所述衬底的投影的轮廓线与所述隔离柱在所述衬底的投影的轮廓线的间距大于1μm。
在本公开的一种示例性实施例中，所述隔离柱的数量为多个，各所述隔离柱同心围绕所述开孔区设置；
在垂直于所述衬底的方向上，所述驱动层对应于每个所述隔离柱的部分均具有多层所述反光层。
在本公开的一种示例性实施例中，在垂直于所述衬底的方向上，所述驱动层对应于所述隔离柱的部分具有两层所述反光层；
所述驱动层包括位于所述显示区的薄膜晶体管和电容电极，所述薄膜晶体管的栅极和所述电容电极形成存储电容；
所述栅极与一所述反光层同层设置，所述电容电极与另一所述反光层同层设置，所述薄膜晶体管的源极、漏极和所述隔离柱同层设置。
在本公开的一种示例性实施例中，所述隔离柱包括沿背离所述衬底的方向依次层叠的第一金属层、第二金属层和第三金属层，所述第一金属层的外缘和所述第三金属层的外缘均伸出所述第二金属层的外缘，以在所述隔离柱的侧壁形成所述凹槽；所述第一金属层、所述第二金属层和所述第三金属层至少一个包括反光的金属材料。
在本公开的一种示例性实施例中，所述第一金属层和所述第三金属层的材料包括钛，所述第二金属层的材料包括铝。
根据本公开的一个方面，提供一种显示面板的制造方法，包括：
提供一衬底，所述衬底具有开孔区、围绕所述开孔区的过渡区和围绕所述过渡区的显示区；
在所述衬底一侧形成覆盖所述显示区和所述过渡区的驱动层，所述驱动层位于所述过渡区的部分包括围绕所述开孔区的反光层；
在所述驱动层背离所述衬底的表面形成位于过渡区且围绕所述开孔区的隔离柱，所述隔离柱在所述衬底的投影的轮廓线位于所述反光层在所述衬底的投影的轮廓线内侧，所述隔离柱的侧壁设有凹槽；
形成覆盖所述驱动层和所述隔离层的发光器件层，所述发光器件层包括发光层，且所述发光层在所述凹槽处间断；
在所述开孔区形成贯穿所述驱动层和所述发光器件层的通孔。
在本公开的一种示例性实施例中，在垂直于所述衬底的方向上，所述驱动层对应于所述隔离柱的部分具有多层所述反光层。
在本公开的一种示例性实施例中，在垂直于所述衬底的方向上，所述驱动层对应于所述隔离柱的部分具有第一反光层和第二反光层；
在所述衬底一侧形成覆盖所述显示区和所述过渡区的驱动层，包括：
在所述衬底一侧形成位于所述显示区的有源层；
形成覆盖所述有源层的栅绝缘层；
通过一次构图工艺在所述栅绝缘层背离所述衬底的一侧的形成位于所述显示区的栅极和位于所述过渡区的第一反光层；
形成覆盖所述栅极和所述第一反光层的绝缘层；
通过一次构图工艺在所述绝缘层背离所述衬底的表面形成正对于所述栅极的电容电极和正对于所述第一反光层的第二反光层；
形成覆盖所述电容电极和所述第二反光层的介电层，且所述介电层在对应于所述第二反光层的区域形成有凸台；
在所述介电层背离所述衬底的一侧形成源漏层，所述源漏层包括与所述有源层连接的源极和漏极。
在本公开的一种示例性实施例中，所述隔离柱与所述源漏层通过同 一次构图工艺形成，所述隔离柱位于所述凸台背离所述衬底的表面。
根据本公开的一个方面，提供一种显示装置，包括上述任意一项所述的显示面板。
应当理解的是，以上的一般描述和后文的细节描述仅是示例性和解释性的，并不能限制本公开。
附图说明
此处的附图被并入说明书中并构成本说明书的一部分，示出了符合本公开的实施例，并与说明书一起用于解释本公开的原理。显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为相关技术中显示面板的局部示意图。
图2为本公开显示面板一实施方式的俯视图。
图3为图2的A-A剖视图。
图4为本公开显示面板一实施方式中隔离柱的俯视图。
图5为本公开显示面板另一实施方式中隔离柱的俯视图。
图6为本公开制造方法一实施方式的流程图。
图7为本公开制造方法一实施方式中的步骤S130的示意图。
附图标记说明：
100、显示面板；1、衬底；101、开孔区；102、过渡区；103、显示区；2、驱动层；201、反光层；201a、第一反光层；201b、第二反光层；202、凸台；21、有源层；22、栅绝缘层；23、栅极；24、绝缘层；25、电容电极；26、介电层；27、源极；28、漏极；3、隔离柱；301、凹槽；31、第一金属层；32、第二金属层；33、第三金属层；3a、第一隔离柱；3b、第二隔离柱；4、发光器件层；401、发光层；402、第一电极；403、第二电极；5、通孔；6、平坦层；7、像素界定层；8、填充层。
具体实施方式
现在将参考附图更全面地描述示例实施方式。然而，示例实施方式能够以多种形式实施，且不应被理解为限于在此阐述的实施方式；相反，提供这些实施方式使得本公开将全面和完整，并将示例实施方式的构思全面地传达给本领域的技术人员。图中相同的附图标记表示相同或类似的结构，因而将省略它们的详细描述。此外，附图仅为本公开的示意性图解，并非一定是按比例绘制。
虽然本说明书中使用相对性的用语，例如“上”“下”来描述图标的一个组件对于另一组件的相对关系，但是这些术语用于本说明书中仅出于方便，例如根据附图中所述的示例的方向。能理解的是，如果将图标的装置翻转使其上下颠倒，则所叙述在“上”的组件将会成为在“下”的组件。当某结构在其它结构“上”时，有可能是指某结构一体形成于其它结构上，或指某结构“直接”设置在其它结构上，或指某结构通过另一结构“间接”设置在其它结构上。
用语“一个”、“一”、“该”、“所述”用以表示存在一个或多个要素/组成部分/等；用语“包括”和“具有”用以表示开放式的包括在内的意思并且是指除了列出的要素/组成部分/等之外还可存在另外的要素/组成部分/等；用语“第一”、“第二”和“第三”等仅作为标记使用，不是对其对象的数量限制。
相关技术中，显示面板具有显示区、过渡区和开孔区，过渡区围绕开孔区，显示区围绕过渡区，开孔区可开设用于设置摄像头等器件的通孔。如图1所示，图1示出了显示面板的局部，即过渡区，过渡区可包括衬底1a、驱动层2a和设于驱动层2a背离衬底1a一侧的隔离柱3a，隔离柱3a的内侧壁和外侧壁设有凹槽31a。在驱动层2a背离衬底1的一侧形成有机材料的发光层时，发光层可在凹槽31a位置断开，但是，在形成隔离柱3a时，凹槽31a内可能残留光刻胶，从而将隔离柱3a填充，使得发光层无法在凹槽31a处断开，从而难以阻断水氧沿发光层侵蚀显示区的路径。
此外，为了保证阻断发光层的效果，还在隔离柱3a的两侧设置了凹槽21a，进一步阻断发光层，但需要对驱动层2a开槽，增加了工艺难度。
本公开实施方式提供了一种显示面板，该显示面板可为OLED显示面板，其可设有用于安装摄像头或其它器件的通孔，通孔被过渡区围绕，过渡区被能发光的显示区围绕。
如图2和图3所示，本公开实施方式的显示面板100可包括衬底1、驱动层2、隔离柱3、发光器件层4和通孔5，其中：
衬底1具有开孔区101、围绕开孔区101的过渡区102和围绕过渡区102的显示区103。
驱动层2设于衬底1一侧，且覆盖显示区103和过渡区102，驱动层2位于过渡区102的部分包括围绕开孔区101的反光层201。
隔离柱3设于驱动层2背离衬底1的表面且位于过渡区102，隔离柱3围绕开孔区101，隔离柱3在衬底1的投影的轮廓线位于反光层201在衬底1的投影的轮廓线内侧；隔离柱3的侧壁设有凹槽301。
发光器件层4，覆盖驱动层2和隔离柱3，发光器件层4包括发光层401，发光层401在凹槽301处间断。
通孔5贯穿驱动层2和发光器件层4，且位于开孔区101。
本公开实施方式的显示面板，发光器件层4的发光层401被凹槽301隔断，阻断通孔5处的水氧向显示区103侵蚀的路径，从而防止显示区103的发光器件层4被侵蚀。同时，由于隔离柱3在衬底1的投影的轮廓线位于反光层201在衬底1的投影的轮廓线内侧，使得反光层201的边缘超出隔离柱3的边缘，且超出的部分可向背离衬底1的方向反光，使得隔离柱3侧壁的凹槽301内可被光线照射，避免凹槽301被残留的光刻胶填充，从而保证凹槽301可隔断发光层401，确保隔离柱3能阻断水氧侵蚀路径，改善显示效果。此外，由于提升了对发光层401的阻断效果，因而可免于在驱动层2位于隔离柱3的两侧的位置专门开设用于隔断发光层401的隔断槽。
下面对本公开实施方式显示面板100的各部分进行详细说明：
如图2和图3所示，衬底1可划分为多个区域，包括开孔区101、过渡区102和显示区103，其中，过渡区102围绕开孔区101，显示区103围绕过渡区102。开孔区101对应于显示面板100的开孔区，过渡区102对应于显示面板100的过渡区，显示区103对应于显示面板100的 显示区。
衬底1可为单层或多层结构，例如，衬底1可包括玻璃基板和玻璃基板上的缓冲层，缓冲层的材料可包括氮化硅、氧化硅等。
如图2和图3所示，驱动层2设于衬底1一侧，例如，驱动层2设于缓冲层背离玻璃基板的表面。驱动层2覆盖显示区103和过渡区102，驱动层2位于过渡区102的部分包括反光层201，且反光层201可为环形结构，其可围绕开孔区101设置。反光层201的材料包括不透明的金属或其它反光材料，从而可向其背离衬底1一侧反射光线。
如图2和图3所示，隔离柱3设于驱动层2背离衬底1的表面且位于过渡区102，且隔离柱3可为环形结构，且围绕开孔区101设置，隔离柱3的侧壁设有凹槽301，即环形结构的内壁和外壁中至少一个设有凹槽301，在形成发光器件层4的发光层401时，发光层401在凹槽301处断开，从而阻断水氧侵蚀的路径。
隔离柱3在衬底1的投影的轮廓线位于反光层201在衬底1的投影的轮廓线内侧，使得反光层201的边缘超出隔离柱3的边缘，且超出的部分可向背离衬底1的一侧反光，其中至少部分光线可反射至凹槽301内，若光刻胶为正性光刻胶，则通过反光层201反射的光线可对凹槽301内的光刻胶进行曝光，以便进行显影，从而去除光刻胶，防止残留的光刻胶填充凹槽301，以保证发光层401在凹槽301处间断。
在本公开的一些实施方式中，如图3所示，由于反光层201的存在，可使驱动层2对应于反光层201的区域形成与反光层201形状匹配的凸台202，隔离柱3可设于该凸台202背离衬底1的表面，从而可通过反光层201将隔离柱3垫高，增大隔离柱3相对于驱动层2的落差，使得发光层401难以覆盖隔离柱3的侧壁，增强隔离柱3对发光层401的阻断作用。
进一步的，如图3所示，在垂直于衬底1的方向上，驱动层2对应于同一隔离柱3的部分可具有多层反光层201，例如，两层反光层201，从而有利于使凸台202的高度升高，进一步垫高隔离柱3。
进一步的，为了提高反光效果，如图3所示，在垂直于衬底1的方向上相邻的两层反光层201中，背离衬底1的反光层201在衬底1的投 影的轮廓线位于靠近衬底1的反光层201在衬底1的投影的轮廓线内侧，也就是说，反光层201的面积相背离衬底1的方向依次减小，使得每个反光层201都可向背离衬底1的一侧反射光线，从而有利于增大进入凹槽301内光线，进一步减少光刻胶残留。
在本公开的一些实施方式中，如图3所示，反光层201在衬底1的投影的轮廓线与隔离柱3在衬底1的投影的轮廓线的间距L大于1μm，也就是说，反光层201的横截面的宽度与隔离柱3的横截面的宽度之差大于1μm，从而保证有足够的光线被反射到凹槽301内。
在本公开的一些实施方式中，如图5所示，隔离柱3的数量可为多个，各隔离柱3的大小不同，且同心围绕开孔区101设置，从而提高对发光层401的阻断效果。例如，隔离柱3包括第一隔离柱3a和第二隔离柱3b，第一隔离柱3a围绕开孔区101，第二隔离柱3b围绕第一隔离柱3a。同时，第一隔离柱3a和第二隔离柱3b之间可设置填充层8分隔第一隔离柱3a和第二隔离柱3b。
进一步的，在垂直于衬底1的方向上，驱动层2对应于每个隔离柱3的部分均具有多层反光层201，即每个隔离柱3靠近衬底1的一侧均有多层反光层201，例如，两层反光层201。
当然，在本公开的其它实施方式中，如图3和图4所示，隔离柱3的数量也可以是一个，此外，驱动层2对应于同一隔离柱3的部分也可仅具有一层反光层201。
在本公开的一些实施方式中，如图3所示，驱动层2对应于同一隔离柱3的部分具有两层反光层201。驱动层2包括位于显示区103的薄膜晶体管和电容电极，电容电极与薄膜晶体管的栅极正对，且形成一存储电容。
薄膜晶体管的栅极与一个反光层201同层设置，使得两个反光层201可分别与薄膜晶体管的栅极和电容电极同时形成，从而简化工艺。同时，薄膜晶体管的源极、漏极和隔离柱3同层设置，以便同时形成源极、漏极和隔离柱3，从而简化工艺。
举例而言，如图3所示，薄膜晶体管为顶栅结构，驱动层2包括依次层叠于衬底1一侧的有源层21、栅绝缘层22、栅极23、绝缘层24、 电容电极25、介电层26和源漏层，有源层21、栅极23和电容电极25在垂直于衬底1的方向上正对，源漏层包括源极27和漏极28，且连接于有源层21的两端。
驱动层2对应于同一隔离柱3的部分也具有两层反光层201，包括第一反光层201a和第二反光层201b，栅极23和第一反光层201a同层设置，电容电极25和第二反光层201b同层设置，第一反光层201a和第二反光层201b被层叠的栅绝缘层22和绝缘层24分隔。同时，源漏层和隔离柱3同层设置，以便通过一次构图工艺形成。
在本公开的一些实施方式中，如图3所示，隔离柱3包括沿背离衬底1的方向依次层叠的第一金属层31、第二金属层32和第三金属层33，第一金属层31的外缘和第三金属层33的外缘均伸出第二金属层32的外缘，以在隔离柱3的侧壁形成凹槽301，使得隔离柱3的横截面成“工”字形结构。
第一金属层31、第二金属层32和第三金属层33至少一个包括反光的金属材料，以便实现反光。例如，第一金属层31和第三金属层33的材料包括钛，第二金属层32的材料包括铝。
源极27和漏极28也可包括三层金属层，且与第一金属层31、第二金属层32和第三金属层33一一对应的同层设置，以便同时形成。
如图3所示，发光器件层4覆盖驱动层2和隔离柱3，且发光器件层4包括发光层401，发光层401的材料可包括电致有机发光材料，且发光层401在凹槽301处间断，从而阻断水氧侵蚀的路径。
在本公开的一些实施方式中，如图3所示，显示面板100还可包括平坦层6，平坦层6设于显示区103，且覆盖源漏层。发光器件层4还包括第一电极402和第二电极403，第一电极402的数量可有多个，并设于驱动层2背离衬底1的一侧，且第一电极402位于显示区103；第一电极402可一一对应的与各薄膜晶体管的漏极28连接，同时，驱动层2背离衬底1的一侧还可设有露出各个第一电极402的像素界定层7。发光层401设于第一电极402背离衬底1的表面，且延伸至过渡区102，并覆盖隔离柱3，且在凹槽301处断开。第二电极403设于发光层401背离衬底1的表面，通过各个第一电极402、发光层401和第二电极403 形成多个OLED发光器件，且各个OLED发光器件可在薄膜晶体管的驱动下发光。
如图3所示，通孔5贯穿驱动层2和发光器件层4，且位于开孔区101，以便设置摄像头、传感器等电子器件。通孔5的形状在此不作特殊限定。
本公开实施方式提供一种显示面板的制造方法，该显示面板的结构可参考上文中显示面板的实施方式，在此不再详述。如图6所示，本公开实施方式的制造方法可包括步骤S110-步骤S150，其中：
步骤S110、提供一衬底，所述衬底具有开孔区、围绕所述开孔区的过渡区和围绕所述过渡区的显示区；
步骤S120、在所述衬底一侧形成覆盖所述显示区和所述过渡区的驱动层，所述驱动层位于所述过渡区的部分包括围绕所述开孔区的反光层；
步骤S130、在所述驱动层背离所述衬底的表面形成位于过渡区且围绕所述开孔区的隔离柱，所述隔离柱在所述衬底的投影的轮廓线位于所述反光层在所述衬底的投影的轮廓线内侧，所述隔离柱的侧壁设有凹槽；
步骤S140、形成覆盖所述驱动层和所述隔离层的发光器件层，所述发光器件层包括发光层，且所述发光层在所述凹槽处间断；
步骤S150、在所述开孔区形成贯穿所述驱动层和所述发光器件层的通孔。
本公开实施方式的制造方法中的衬底、驱动层、隔离柱和发光器件层和通孔的具体结构和有益效果已在上文显示面板的实施方式中进行了说明，在此不再赘述。
在本公开的一些实施方式中，如图3所示，在垂直于衬底1的方向上，驱动层2对应于隔离柱3的部分具有第一反光层201a和第二反光层201b。
在所述衬底一侧形成覆盖所述显示区和所述过渡区的驱动层，即步骤S120，包括步骤S1210-步骤S1270，其中：
步骤S1210、在所述衬底一侧形成位于所述显示区的有源层；
步骤S1220、形成覆盖所述有源层的栅绝缘层；
步骤S1230、通过一次构图工艺在所述栅绝缘层背离所述衬底的一侧的形成位于所述显示区的栅极和位于所述过渡区的第一反光层；
步骤S1240、形成覆盖所述栅极和所述第一反光层的绝缘层；
步骤S1250、通过一次构图工艺在所述绝缘层背离所述衬底的表面形成正对于所述栅极的电容电极和正对于所述第一反光层的第二反光层；
步骤S1260、形成覆盖所述电容电极和所述第二反光层的介电层，且所述介电层在对应于所述第二反光层的区域形成有凸台；
步骤S1270、在所述介电层背离所述衬底的一侧形成源漏层，所述源漏层包括与所述有源层连接的源极和漏极。
如图7所示，隔离柱3和源漏层通过同一次构图工艺形成，且隔离柱3位于凸台202背离衬底1的表面。一次构图工艺可以包括一次或多次光刻、印刷等工艺，在此不做特殊限定，只要能同时形成隔离柱3和源漏层即可。举例而言：隔离柱3包括沿背离衬底1的方向依次层叠的第一金属层31、第二金属层32和第三金属层33；源漏层也可包括三层金属层，即源极27和漏极28括三层金属层，其中，第一金属层31、第二金属层32和第三金属层33可一一对应的与源漏层的三层金属层同时形成。
当然，在本公开的其它实施方式中，隔离柱3和源漏层也可分别独立形成。本公开实施方式的制造方法的制造的显示面板的细节可参考显示面板的实施方式，在此不再赘述。
需要说明的是，尽管在附图中以特定顺序描述了本公开中方法的各个步骤，但是，这并非要求或者暗示必须按照该特定顺序来执行这些步骤，或是必须执行全部所示的步骤才能实现期望的结果。附加的或备选的，可以省略某些步骤，将多个步骤合并为一个步骤执行，以及/或者将一个步骤分解为多个步骤执行等。
本公开实施方式还提供一种显示装置，该显示装置可包括上述任意实施方式的显示面板，其结构和有益效果可参考上述显示面板的实施方式，在此不再详述。本公开实施方式的显示装置可以是手机、平板电脑、 电视等用于显示图像的装置，在此不再列举。
本领域技术人员在考虑说明书及实践这里公开的发明后，将容易想到本公开的其它实施方案。本申请旨在涵盖本公开的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本公开的一般性原理并包括本公开未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的，本公开的真正范围和精神由所附的权利要求指出。

Claims (14)

  1. 一种显示面板，其中，包括：
    衬底，具有开孔区、围绕所述开孔区的过渡区和围绕所述过渡区的显示区；
    驱动层，设于所述衬底一侧，且覆盖所述显示区和所述过渡区，所述驱动层位于所述过渡区的部分包括围绕所述开孔区的反光层；
    隔离柱，设于所述驱动层背离所述衬底的表面且位于所述过渡区，所述隔离柱围绕所述开孔区，所述隔离柱在所述衬底的投影的轮廓线位于所述反光层在所述衬底的投影的轮廓线内侧；所述隔离柱的侧壁设有凹槽；
    发光器件层，覆盖所述驱动层和所述隔离柱，所述发光器件层包括发光层，所述发光层在所述凹槽处间断；
    通孔，贯穿所述驱动层和所述发光器件层，且位于所述开孔区。
  2. 根据权利要求1所述的显示面板，其中，所述驱动层对应于所述反光层的区域形成有与所述反光层形状匹配的凸台，所述隔离柱设于凸台背离所述衬底的表面。
  3. 根据权利要求1所述的显示面板，其中，在垂直于所述衬底的方向上，所述驱动层对应于所述隔离柱的部分具有多层所述反光层。
  4. 根据权利要求3所述的显示面板，其中，在垂直于所述衬底的方向上相邻的两层所述反光层中，背离所述衬底的反光层在所述衬底的投影的轮廓线位于靠近所述衬底的反光层在所述衬底的投影的轮廓线内侧。
  5. 根据权利要求3所述的显示面板，其中，所述反光层在所述衬底的投影的轮廓线与所述隔离柱在所述衬底的投影的轮廓线的间距大于1μm。
  6. 根据权利要求3所述的显示面板，其中，所述隔离柱的数量为多个，各所述隔离柱同心围绕所述开孔区设置；
    在垂直于所述衬底的方向上，所述驱动层对应于每个所述隔离柱的部分均具有多层所述反光层。
  7. 根据权利要求3所述的显示面板，其中，在垂直于所述衬底的方向上，所述驱动层对应于所述隔离柱的部分具有两层所述反光层；
    所述驱动层包括位于所述显示区的薄膜晶体管和电容电极，所述薄膜晶体管的栅极和所述电容电极形成存储电容；
    所述栅极与一所述反光层同层设置，所述电容电极与另一所述反光层同层设置，所述薄膜晶体管的源极、漏极和所述隔离柱同层设置。
  8. 根据权利要求3所述的显示面板，其中，所述隔离柱包括沿背离所述衬底的方向依次层叠的第一金属层、第二金属层和第三金属层，所述第一金属层的外缘和所述第三金属层的外缘均伸出所述第二金属层的外缘，以在所述隔离柱的侧壁形成所述凹槽；所述第一金属层、所述第二金属层和所述第三金属层至少一个包括反光的金属材料。
  9. 根据权利要求8所述的显示面板，其中，所述第一金属层和所述第三金属层的材料包括钛，所述第二金属层的材料包括铝。
  10. 一种显示面板的制造方法，其中，包括：
    提供一衬底，所述衬底具有开孔区、围绕所述开孔区的过渡区和围绕所述过渡区的显示区；
    在所述衬底一侧形成覆盖所述显示区和所述过渡区的驱动层，所述驱动层位于所述过渡区的部分包括围绕所述开孔区的反光层；
    在所述驱动层背离所述衬底的表面形成位于过渡区且围绕所述开孔区的隔离柱，所述隔离柱在所述衬底的投影的轮廓线位于所述反光层在所述衬底的投影的轮廓线内侧，所述隔离柱的侧壁设有凹槽；
    形成覆盖所述驱动层和所述隔离层的发光器件层，所述发光器件层包括发光层，且所述发光层在所述凹槽处间断；
    在所述开孔区形成贯穿所述驱动层和所述发光器件层的通孔。
  11. 根据权利要求10所述的制造方法，其中，在垂直于所述衬底的方向上，所述驱动层对应于所述隔离柱的部分具有多层所述反光层。
  12. 根据权利要求11所述的制造方法，其中，在垂直于所述衬底的方向上，所述驱动层对应于所述隔离柱的部分具有第一反光层和第二反光层；
    在所述衬底一侧形成覆盖所述显示区和所述过渡区的驱动层，包括：
    在所述衬底一侧形成位于所述显示区的有源层；
    形成覆盖所述有源层的栅绝缘层；
    通过一次构图工艺在所述栅绝缘层背离所述衬底的一侧的形成位于所述显示区的栅极和位于所述过渡区的第一反光层；
    形成覆盖所述栅极和所述第一反光层的绝缘层；
    通过一次构图工艺在所述绝缘层背离所述衬底的表面形成正对于所述栅极的电容电极和正对于所述第一反光层的第二反光层；
    形成覆盖所述电容电极和所述第二反光层的介电层，且所述介电层在对应于所述第二反光层的区域形成有凸台；
    在所述介电层背离所述衬底的一侧形成源漏层，所述源漏层包括与所述有源层连接的源极和漏极。
  13. 根据权利要求12所述的制造方法，其中，所述隔离柱与所述源漏层通过同一次构图工艺形成，所述隔离柱位于所述凸台背离所述衬底的表面。
  14. 一种显示装置，其中，包括权利要求1-9任一项所述的显示面板。
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