WO2016062240A1 - 一种顶发射oled器件及其制作方法、显示设备 - Google Patents

一种顶发射oled器件及其制作方法、显示设备 Download PDF

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WO2016062240A1
WO2016062240A1 PCT/CN2015/092305 CN2015092305W WO2016062240A1 WO 2016062240 A1 WO2016062240 A1 WO 2016062240A1 CN 2015092305 W CN2015092305 W CN 2015092305W WO 2016062240 A1 WO2016062240 A1 WO 2016062240A1
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electrode
layer
oled device
substrate
curved surface
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PCT/CN2015/092305
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English (en)
French (fr)
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代青
刘则
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京东方科技集团股份有限公司
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Priority to EP15852121.1A priority Critical patent/EP3211683A4/en
Priority to US15/102,492 priority patent/US20180166648A1/en
Publication of WO2016062240A1 publication Critical patent/WO2016062240A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present invention relates to a light emitting device in a display device, and more particularly to a top emitting OLED device and a method of fabricating the same, and a display device including the organic electroluminescent device.
  • 0LED Organic Light-Emitting Device
  • the OLEDs can be classified into three types according to the light-emitting direction, namely, a bottom-emitting OLED, a top-emitting OLED, and a double-sided emitting OLED.
  • a bottom-emitting OLED light is emitted from the direction of the substrate
  • the top-emitting OLED light is emitted from the top of the device
  • the double-sided emitting OLED light is simultaneously emitted from the substrate and the top of the device.
  • the top emitting OLED is not affected by the light transmission of the substrate, can effectively improve the aperture ratio of the display panel, and can narrow the spectrum and improve the color purity.
  • top-emitting OLEDs have higher device efficiency, they tend to have a strong microcavity effect.
  • the microcavity effect changes the luminescence spectrum of the OLED with the observation angle, which leads to the observation angle dependence of the OLED, and causes the deviation of the color of the device and the narrowing of the viewing angle.
  • a typical top-emitting OLED device generally includes a glass substrate, a TFT (Thin Film Transistor), a flat layer, a bottom electrode (anode), a pixel defining layer, an organic layer, and a top electrode (cathode).
  • the bottom electrode, the organic layer and the top electrode are respectively planar structures. Light emitted from the organic layer is reflected by the anode (bottom electrode) and then emitted from the cathode (top electrode) side.
  • a conventional top-emitting OLED device In a conventional top-emitting OLED device, light rays emanating from points at different positions in the organic layer to the same observation point have different optical path paths, resulting in optical path differences, thus resulting in different light-emitting points seen from the same observation point.
  • the spectrum is different and the intensity is different, that is, the spectrum and efficiency of the OLED device have a significant angular dependence.
  • an optical modulation layer is added over the top electrode (generally a cathode) to adjust the light-emitting property, which reduces the viewing angle dependence of the OLED due to the microcavity effect to some extent.
  • the material of the modulation layer itself absorbs a part of the light and reduces the light.
  • the microcavity effect is attenuated by reducing the reflectivity of the anode, for example using a Bragg (DBR) multilayer structure as the reflective anode.
  • DBR Bragg
  • the control of the film thickness is relatively strict, and the process is complicated.
  • Simultaneous microcavity The advantage of the positive exit light efficiency of the strong device, the reduction of the microcavity effect will also be accompanied by weakening its application advantages in this respect.
  • a display screen using a top-emitting OLED generally further includes a color filter substrate, the color film substrate and the OLED are formed by a box having a larger thickness, and an exit angle of light from the pixel edge of the OLED to the color filter substrate. Larger, it is possible to cause light emitted from one pixel area of the OLED to be incident on the color film of the adjacent pixel area, causing lateral light leakage and causing display abnormality.
  • the present invention is directed to a top-emitting OLED device and a method of fabricating the same, and a display device including a top-emitting OLED device capable of improving display performance of a display device.
  • An embodiment of the first aspect of the present invention provides a top-emitting OLED device, comprising: a substrate; a first electrode disposed on the substrate; an organic layer disposed on the first electrode; and a second electrode disposed on the organic layer, Light emitted from the organic layer is emitted from the OLED device via the second electrode; wherein the first electrode includes a curved structure concave toward the substrate, and the organic layer and the second electrode include a curved structure formed on the first electrode The corresponding surface structure on it.
  • the top-emitting OLED device provided by the embodiment of the invention not only can maintain the microcavity effect, but also can reduce the viewing angle dependence of the top-emitting OLED device, thereby preventing the deviation of the color of the OLED device and the narrowing of the viewing angle, and the invention
  • the OLED device is capable of preventing lateral light leakage of a display device including the OLED device.
  • the first electrode further comprises a flat edge portion surrounding the curved structure.
  • the curved structure of the first electrode comprises a flat bottom and an inclined side wall extending from the flat bottom.
  • the angle a of the inclined side wall with respect to the flat bottom satisfies the following relationship: 0° ⁇ ⁇ ⁇ 60°.
  • the OLED device further includes:
  • a planarization layer disposed between the substrate and the first electrode, the curved surface structure of the first electrode being recessed into the planarization layer.
  • the OLED device further includes: a thin film transistor disposed between the substrate and the planarization layer, wherein an edge portion of the first electrode passes through a via and a film formed in the planarization layer The transistors are electrically connected.
  • the OLED device further includes:
  • the OLED device further includes: a thin film transistor disposed between the substrate and the planarization layer, wherein an edge portion of the first electrode passes through the auxiliary layer and the planarization layer The hole is electrically connected to the thin film transistor.
  • the OLED device further includes: a pixel defining layer disposed between the first electrode and the second electrode and surrounding the organic layer.
  • the OLED device further includes: a planarization layer disposed on the second electrode.
  • a display device including the above-described top emission OLED device is provided.
  • a method of fabricating a top-emitting OLED device comprising the steps of:
  • a first electrode is deposited on the planarization layer including the curved portion such that the first electrode includes a curved structure overlying the curved portion and a flat edge portion extending from the curved portion.
  • a second electrode is deposited on the pixel defining layer formed with the organic layer such that the second electrode includes a curved surface structure conforming to a curved surface structure of the organic layer.
  • a first electrode is deposited on the auxiliary layer including the curved portion such that the first electrode includes a curved structure covering the curved portion and a flat edge portion extending from the curved portion.
  • FIG. 1A is a partial cross-sectional view of a top-emitting OLED device in accordance with an embodiment of the present invention
  • FIG. 1B is a schematic diagram showing the principle of the path through which light rays emitted from different points in the OLED device shown in FIG. 1A reach the observation point;
  • FIG. 2 shows a schematic diagram of various steps of a method of fabricating the OLED device shown in FIG. 1A.
  • FIG. 1A is a partial cross-sectional view of a top-emitting OLED device in accordance with an embodiment of the present invention
  • FIG. 1B is a schematic diagram of a path through which light rays emitted from different points in the OLED device shown in FIG. 1A pass through an observation point.
  • the basic structure of the top-emitting OLED device shown in FIG. 1A includes: a substrate 1; a first electrode 5 disposed on the substrate 1, for example, as an anode; and an organic layer 7 disposed on the first electrode 5, which have different
  • the functional sub-organic layer is composed of only three layers in the figure; and the second electrode 8 provided on the organic layer 7, for example, as a cathode, the light emitted from the organic layer 7 is emitted via the second electrode 8.
  • the first electrode 5 includes a curved surface structure 51 that is concave toward the substrate 1 (ie, recessed toward the substrate 1), and the organic layer 7 and the second electrode 8 are formed on the curved surface structure 51 of the first electrode 5.
  • the corresponding surface structure is concave toward the substrate 1 (ie, recessed toward the substrate 1)
  • the first electrode 5 is a reflective electrode, usually an anode, and is made of one of gold, silver, aluminum, or an alloy thereof.
  • the second electrode is a translucent, semi-reflective electrode, typically a cathode, made of gold, silver, or an alloy thereof.
  • the curved structure 51 of the first electrode may include a flat bottom 51a and a slanted side wall 51b extending from the flat bottom.
  • the organic layer 7 and the second electrode 8 may include respective flat bottoms and inclined side walls.
  • FIG. 1B shows a partial schematic view of the light propagation path in the organic layer 7 and the second electrode 8 in FIG. 1A.
  • the light emission point A1 located at the inclined side wall of the organic layer 7 and the light emission point B1 located at the flat bottom of the organic layer 7 are different from the observation point P, but since the curved structure is adopted, In fact, the optical paths of the two points through the device are approximately equal, and the microcavity effect is also approximate, so the color and brightness of the two points are basically the same for the observer.
  • the first electrode 5 further includes a flat edge portion 52 surrounding the curved structure 51 of the first electrode.
  • the exemplary OLED device shown in FIG. 1 further includes a planarization layer 3 and an auxiliary layer 4 disposed between the substrate 1 and the first electrode 5 in order from the substrate 1 side, the curved surface 51 of the first electrode 5 being concave Into the auxiliary layer 4.
  • the material of the planarization layer 3 and the auxiliary layer 4 may be, for example, an electrically insulating material such as PI or SiO2.
  • the auxiliary layer 4 may be omitted, and the curved surface structure 51 of the first electrode 5 may be directly formed in the planarization layer 3. That is, the curved surface structure 51 of the first electrode 5 is recessed into the planarization layer 3. According to this embodiment, the planarization layer 3 is required to be thicker so that the curved structure 51 of the electrode 5 penetrates the planarization layer.
  • the OLED device shown in FIG. 1 further includes a thin film transistor (TFT) 2 disposed between the substrate 1 and the planarization layer 3.
  • the first electrode 5 further includes a flat edge portion 52 surrounding the curved structure 51, and the edge portion 52 of the first electrode 5 passes through the via holes 31 and 41 formed in the planarization layer 3 and the auxiliary layer 4 and the thin film transistor 2 The drain is electrically connected.
  • the edge portion 52 of the first electrode 5 is electrically connected to the drain of the thin film transistor 2 only through the via 31 formed in the planarization layer 3.
  • the OLED device as described in FIG. 1 further includes a pixel defining layer 6 disposed between the first electrode 5 and the second electrode 8 and surrounding the organic layer 7.
  • the pixel defining layer 6 completely covers the exposed portion of the auxiliary layer 4 and the edge portion 52 of the reflective electrode 5, the edge of which reaches the top end of the inclined side wall 51b of the curved surface structure 51 of the reflective electrode 5.
  • the organic layer 7 may include functional layers such as a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer which are disposed in order from one side of the first electrode 5, and may also include a complicated device having a series structure.
  • the OLED device of the embodiment of the present invention further includes a transparent planarization layer formed on the second electrode 8 to compensate for the difference in height of the second electrode in the thickness direction caused by the recessed portion. Further, a color film and a transparent glass substrate may be disposed on the planarization layer.
  • a display device comprising the OLED device of any of the above embodiments.
  • the display device can be any product or component having a display function such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, an electronic paper, and the like.
  • a method of fabricating a top-emitting OLED device comprising the steps of:
  • a first electrode is deposited on the planarization layer including the curved portion such that the first electrode includes a curved structure overlying the curved portion and a flat edge portion extending from the curved portion.
  • the method may further comprise the following steps:
  • a second electrode is deposited on the pixel defining layer formed with the organic layer such that the second electrode includes a curved surface structure conforming to a curved surface structure of the organic layer.
  • the method may further comprise the following steps:
  • a via hole is formed in the planarization layer such that an edge portion of the first electrode is electrically connected to the thin film transistor through a via hole formed in the planarization layer.
  • a method of fabricating a top-emitting OLED device comprising the steps of:
  • a first electrode is deposited on the auxiliary layer including the curved portion such that the first electrode includes a curved structure covering the curved portion and a flat edge portion extending from the curved portion.
  • the method may further comprise the following steps:
  • a second electrode is deposited on the pixel defining layer formed with the organic layer such that the second electrode includes a curved surface structure conforming to a curved surface structure of the organic layer.
  • the method may further comprise the following steps:
  • a via hole is formed in the auxiliary layer and the planarization layer such that an edge portion of the first electrode is electrically connected to the thin film transistor through a via hole formed in the auxiliary layer and the planarization layer.
  • FIG. 2 shows a schematic diagram of various steps of a method of fabricating the OLED device shown in FIG. 1A.
  • the method of manufacturing the OLED device shown in FIG. 1A includes:
  • Step 1 providing a glass substrate 1 and preparing a TFT on the glass substrate 1; then forming a planarization layer 3 such as SiO 2 on the substrate 1 including the TFT 2; and depositing a layer on the planarization layer 3 with good electrical insulation
  • a planarization layer 3 such as SiO 2
  • auxiliary layer 4 such as PI layer, the thickness of the PI layer is between 1-2 microns;
  • Step 2 patterning the auxiliary layer 4 by exposure, development, etching, forming a concave curved portion corresponding to the pixel opening in the auxiliary layer 4, the curved surface portion may include a flat bottom and inclined side walls, the side wall The slope angle is usually selected between 0-60 degrees; and, the via holes 41 and 31 connected to the drain of the TFT 2 are etched in the planarization layer 3 and the auxiliary layer 4;
  • Step 3 depositing a first electrode 5 having a reflective function on the auxiliary layer 4 patterned as above, and patterning by etching, so that the first electrode 5 includes a surface portion covered on the auxiliary layer 4. a curved structure 51 and a flat edge portion 52 extending from the curved portion 51, and the edge portion 52 is electrically connected to the drain of the TFT through the via holes 41 and 31;
  • Step 4 coating a patterned pixel 1 on the patterned first electrode 5, such as a PI film. Then exposing, developing, etching, forming an opening area corresponding to the pixel opening, the opening area exposing the sidewall of the curved surface structure 51 of the reflective electrode 5;
  • Step 5 On the reflective electrode 5 on which the pixel defining layer 6 is formed, the organic layer 7 of the OLED is deposited by vacuum evaporation, and the organic layer 7 may include a hole injection layer, a hole transport layer, and a light emitting layer.
  • a functional layer such as an electron transport layer or an electron injection layer may further include a charge generating layer, a connection layer, and the like for a complicated device having a series structure;
  • a top electrode 8 may be deposited on the organic layer 7, and the top electrode 8 may be a half A transflective metal electrode such as silver, gold, or an alloy of both.
  • an OLED device having the structure as shown in FIG. 1A is formed.
  • the auxiliary layer 4 may not be deposited on the planarization layer 3, but the first electrode 5 is directly prepared on the planarization layer 3, but the planarization layer 3 requires a thickness other than the conventional one. It is thicker to prevent the electrical insulation performance from degrading after the etching is patterned.
  • the specific method is to deposit a thicker planarization layer 3 on the TFT2, such as SiO2, and then form an open area of the pixel by photoresist protection, masking, etching, etc., and the sidewall of the opening has a certain slope angle;
  • a first electrode 5 as a reflective electrode is deposited on the planarization layer 3, and the first electrode 5 is etched to pattern the first electrode 5, and the first electrode 5 left after etching completely covers the area of the pixel opening And presents a curved structure.
  • the other steps of this embodiment are the same as those of the method shown in Fig. 2.
  • the OLED device of the embodiment of the present invention can improve the angular dependence of the top-emitting OLED by forming an anode, an organic layer, and a cathode having a curved structure.
  • the OLED device of the embodiment of the present invention does not need to add an optical adjustment layer outside the top electrode, so that the light is not reduced by the absorption caused by the adjustment layer material; and the multilayer Bragg diffraction layer with different thickness is used as the reflection bottom electrode.
  • the process of the OLED device of the embodiment of the invention is simple, and the microcavity effect of the metal mirror can be effectively utilized to improve the external quantum efficiency of the device.
  • reducing the angular dependence of the device is especially suitable for large-size OLED displays; compared with planar OLEDs, curved-structured OLEDs increase the effective light-emitting area, that is, increase the aperture ratio of the device; The center of the pixel converges to increase the brightness; at the same time, the light exits along the inclined side wall of the curved structure, and the exit angle is reduced, which reduces the leakage of light to the adjacent pixel area.

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Abstract

一种顶发射OLED器件，包括：基板（1）；设置在基板（1）上的第一电极（5）；设置在第一电极（5）上的有机层（7）；和设置在有机层（7）上的第二电极（8），有机层（7）发出的光经由第二电极（8）从OLED器件射出；其中，所述第一电极（5）具有凹向所述基板（1）的曲面结构。该顶发射OLED器件，能够减轻顶发射OLED的观测角度依赖性问题，防止器件出光颜色的偏离和可视角度变窄、侧向漏光等现象。

Description

一种顶发射OLED器件及其制作方法、显示设备
本申请要求于2014年10月22日递交中国专利局的、申请号为201410569281.2的中国专利申请的权益，该申请的全部公开内容以引用方式并入本文。
技术领域
本发明涉及一种显示设备中的发光器件，尤其涉及一种顶发射OLED器件及其制作方法、以及包括有机电致发光器件的显示设备。
背景技术
有机电致发光器件(Organic Light-Emitting Device，以下简称：0LED)具备主动发光、温度特性好、功耗小、响应快、可弯曲、超轻薄和成本低等优点，已广泛应用于显示设备中。
OLED按照出光方向可以分为三种，即：底发射0LED、顶发射OLED与双面发射OLED。在底发射OLED中光从基板方向射出，在顶发射OLED中光从器件顶部方向射出，在双面发射OLED中光同时从基板和器件顶部射出。其中，顶发射OLED不受基板是否透光的影响，可有效提高显示面板的开口率，并能够窄化光谱和提高色纯度。
虽然顶发射OLED具有较高的器件效率，但是其往往具有较强的微腔效应。微腔效应会使OLED的发光光谱随观测角度变化而改变，导致OLED出现观测角度依赖性问题，并造成器件出光颜色的偏离和可视角度变窄。
通常的顶发射OLED器件一般包括玻璃基板、TFT(薄膜晶体管)、平坦层、底电极(阳极)、像素界定层、有机层和顶电极(阴极)。底电极、有机层和顶电极分别为平面结构。从有机层发出的光线经阳极(底电极)反射后由阴极(顶电极)侧射出。
在传统的顶发射OLED器件中，从有机层中的不同位置的点发出的光到达同一观察点所经过的光线路径不同，产生光程差，因此导致从同一观察点看到的来自不同发光点的光谱不同，强度也不一样，即OLED器件的光谱和效率具有明显的角度依赖性。在一种顶发射OLED中，在顶电极(一般为阴极)上方增加一层光学调制层，以调节出光性能，该光学调制层在一定程度上降低了OLED因微腔效应引起的观测角度依赖性，但调制层材料本身会吸收一部分光线而减少出光。
在另一种顶发射OLED中，通过减小阳极的反射率减弱微腔效应，例如使用布拉格(DBR)多层结构作为反射阳极。但是由于DBR结构一般是由多层不同折射率的薄膜交替层叠组成，其对膜厚的控制有较严格的要求，工艺比较复杂。同时微腔具有增 强器件的正面外出光效率的优点，微腔效应的降低也将伴随着削弱其这方面的应用优势。
另一方面，采用顶发射OLED的显示屏通常还包括彩膜基板，彩膜基板与上述OLED对盒形成的盒厚较大，并且，从OLED的像素边缘射向彩膜基板的光的出射角度较大，有可能造成从OLED的一个像素区域发出的光射向相邻像素区域的彩膜，造成侧向漏光现象，并导致显示异常。
发明内容
本发明旨在提供一种顶发射OLED器件及其制造方法、以及包括顶发射OLED器件的显示设备，其能够提高显示设备的显示性能。
本发明第一方面的实施例提供一种顶发射OLED器件，包括：基板；设置在基板上的第一电极；设置在第一电极上的有机层；和设置在有机层上的第二电极，有机层发出的光经由第二电极从OLED器件射出；其中，所述第一电极包括凹向所述基板的曲面结构，所述有机层和所述第二电极包括形成在第一电极的曲面结构上的相应的曲面结构。
本发明实施例提供的顶发射OLED器件，不仅能够保持微腔效应，而且能够减轻顶发射OLED器件的观察角度依赖性，从而防止OLED器件出光颜色的偏离和可视角度变窄，并且，本发明的OLED器件能够防止包含该OLED器件的显示设备的侧向漏光现象。
根据本发明的一个实施例，所述第一电极还包括围绕所述曲面结构的平坦的边缘部分。
根据本发明的一个实施例，所述第一电极的曲面结构包括平坦底部和从平坦底部延伸的倾斜侧壁。
根据本发明的一个实施例，所述倾斜侧壁相对于所述平坦底部的角度α满足如下关系式：0°＜α≤60°。
根据本发明的一个实施例，所述的OLED器件还包括：
设置在基板和第一电极之间的平坦化层，所述第一电极的曲面结构凹入所述平坦化层中。
根据本发明的一个实施例，所述的OLED器件，还包括：设置在基板和平坦化层之间的薄膜晶体管，其中，第一电极的边缘部分通过形成在平坦化层中的过孔与薄膜晶体管电连接。
根据本发明的一个实施例，所述的OLED器件，还包括：
在基板和第一电极之间从基板侧依次设置的平坦化层和辅助层，所述第一电极的曲面结构凹入所述辅助层中。
根据本发明的一个实施例，所述的OLED器件，还包括：设置在基板和平坦化层之间的薄膜晶体管，其中，第一电极的边缘部分通过形成在辅助层和平坦化层中的过孔与薄膜晶体管电连接。
根据本发明的一个实施例，所述的OLED器件，还包括：设置在第一电极和第二电极之间并围绕有机层的像素界定层。
根据本发明的一个实施例，所述的OLED器件，还包括：设置在第二电极上的平坦化层。
根据本发明另一方面的实施例，提供一种显示设备，包括上述的顶发射OLED器件。
根据本发明另一方面的一个实施例，提供一种制造顶发射OLED器件的方法，包括以下步骤：
提供基板；
在基板上形成平坦化层；
在平坦化层中形成凹陷的曲面部分；
在包括曲面部分的平坦化层上沉积第一电极，使得所述第一电极包括覆盖在曲面部分上的曲面结构和从曲面部分延伸的平坦的边缘部分。
使得有机层包括与第一电极的曲面结构一致的曲面结构；
在形成有有机层的像素界定层上沉积第二电极，使得所述第二电极包括与有机层的曲面结构一致的曲面结构。
根据本发明另一方面的一个实施例，提供另一种制造顶发射OLED器件的方法，包括以下步骤：
提供基板；
在基板上形成平坦化层；
在平坦化层上形成辅助层；
在辅助层中形成凹陷的曲面部分；
在包括曲面部分的辅助层上沉积第一电极，使得所述第一电极包括覆盖在曲面部分上的曲面结构和从曲面部分延伸的平坦的边缘部分。
为了使本发明的目的、特征及优点能更加明显易懂，下面结合附图和具体实施例对本发明作进一步说明。
附图说明
图1A是根据本发明的一个实施例的顶发射OLED器件的局部剖视图；
图1B是图1A所示的OLED器件中不同点发出的光线到达观察点所经过的路径的原理示意图；以及
图2示出了制造图1A所示的OLED器件的方法的各个步骤的示意图。
具体实施方式
在下面的详细描述中，为便于解释，阐述了许多具体的细节以提供对本披露实施例的全面理解。然而明显地，一个或多个实施例在没有这些具体细节的情况下也可以被实施。在其他情况下，公知的结构和装置以图示的方式体现以简化附图。另外，说明书中所采用的表述“……设置在……上”可以是一部件设置在另一部件的直接上方，也可能是一部件设置在另一部件的上方，并且在两个部件之间存在中间层。
图1A是根据本发明的一个实施例的顶发射OLED器件的局部剖视图；图1B是图1A所示的OLED器件中不同点发出的光线到达观察点所经过的路径的原理示意图。
如图1A所示的顶发射OLED器件的基本结构包括：基板1；设置在基板1上的例如用做阳极的第一电极5；设置在第一电极5上的有机层7，其由具有不同功能的亚有机层构成，图中仅以三层示例；和设置在有机层7上的例如用做阴极的第二电极8，有机层7发出的光经由第二电极8射出。所述第一电极5包括凹向所述基板1(即朝向基板1凹陷)的曲面结构51，所述有机层7和所述第二电极8包括形成在第一电极5的曲面结构51上的相应的曲面结构。
所述的第一电极5为反射电极，通常为阳极，其材质为金、银、铝中的一种、或是它们的合金。第二电极为半透明半反射的电极，通常为阴极，其材质为金、银，或它们合金。
作为一个例子，所述第一电极的曲面结构51可以包括平坦底部51a和从平坦底部延伸的倾斜侧壁51b。所述有机层7和所述第二电极8可以包括相应的平坦底部和倾斜侧壁。
具有上述结构的OLED器件的光出射路径在图1B中示出。图1B示出了图1A中的有机层7和第二电极8中的光传播路径的部分示意图。如图1B所示，位于有机层7的倾斜侧壁处的光发射点A1和位于有机层7的平坦底部的光发射点B1，虽然距离观察点P的角度不同，但是由于采取了曲面结构，实际上两点透过器件的光程是近似相等的，微腔效果也是近似的，因此对于观察者来说两点的颜色、亮度基本是一样的。
如图1所示，所述第一电极5还包括围绕第一电极的曲面结构51的平坦的边缘部分52。
如图1所示的示例性OLED器件还包括在基板1和第一电极5之间从基板1一侧依次设置的平坦化层3和辅助层4，所述第一电极5的曲面结构51凹入所述辅助层4中。平坦化层3和辅助层4的材料例如可以为PI和SiO2等具有电绝缘性的材料。
可选地，根据另一个实施例，代替在辅助层4中形成第一电极5的曲面结构51，可以不设置辅助层4，而直接在平坦化层3中形成第一电极5的曲面结构51，即，第一电极5的曲面结构51凹入平坦化层3中。根据该实施例，需要平坦化层3较厚，以免电极5的曲面结构51穿透平坦化层。
此外，如图1所示的OLED器件还包括：设置在基板1和平坦化层3之间的薄膜晶体管(TFT)2。所述第一电极5还包括围绕曲面结构51的平坦的边缘部分52，第一电极5的边缘部分52通过形成在平坦化层3和辅助层4中的过孔31和41与薄膜晶体管2的漏极电连接。
在没有辅助层4的实施例中，第一电极5的边缘部分52仅通过形成在平坦化层3中的过孔31与薄膜晶体管2的漏极电连接。
如图1所述的OLED器件，还包括：设置在第一电极5和第二电极8之间并围绕有机层7的像素界定层6。像素界定层6完全覆盖住辅助层4的裸露部分和反射电极5的边缘部分52，其边缘达到反射电极5的曲面结构51的倾斜侧壁51b的顶端。
有机层7可以包括从第一电极5的一侧依次设置的空穴注入层、空穴传输层、发光层、电子传输层和电子注入层等功能层，对于具有串联结构的复杂器件还可以包括电荷产生层，连接层等。
虽然没有示出，但本发明实施例的OLED器件还包括形成在第二电极8上的透明的平坦化层，以弥补凹陷的部分所造成的第二电极在厚度方向上的高度差。进一步地，在该平坦化层上可设置彩膜和透明的玻璃基板。
根据本发明进一步发明的实施例，提供一种显示设备，包括上述任一实施例所述的OLED器件。显示设备可以为手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪、电子纸等任何具有显示功能的产品或部件。
根据本发明的一个实施例，提供一种制造顶发射OLED器件的方法，包括以下步骤：
提供基板；
在基板上形成平坦化层；
在平坦化层中形成凹陷的曲面部分；
在包括曲面部分的平坦化层上沉积第一电极，使得所述第一电极包括覆盖在曲面部分上的曲面结构和从曲面部分延伸的平坦的边缘部分。
所述方法还可以包括以下步骤：
在形成有第一电极的平坦化层上形成像素界定层，使得所述像素界定层露出所述第一电极的曲面结构；
在露出于像素界定层的第一电极的曲面结构上沉积有机层，使得有机层包括与第一电极的曲面结构一致的曲面结构；
在形成有有机层的像素界定层上沉积第二电极，使得所述第二电极包括与有机层的曲面结构一致的曲面结构。
所述方法还可以包括以下步骤：
在基板和平坦化层之间形成薄膜晶体管TFT；以及
在平坦化层中形成过孔，使得第一电极的边缘部分通过形成在平坦化层中的过孔与薄膜晶体管电连接。
根据另一个实施例，提出一种制造顶发射OLED器件的方法，包括以下步骤：
提供基板；
在基板上形成平坦化层；
在平坦化层上形成辅助层；
在辅助层中形成凹陷的曲面部分；
在包括曲面部分的辅助层上沉积第一电极，使得所述第一电极包括覆盖在曲面部分上的曲面结构和从曲面部分延伸的平坦的边缘部分。
所述方法还可以包括以下步骤：
在形成有第一电极的辅助层上形成像素界定层，使得所述像素界定层露出所述第一电极的曲面结构；
在露出于像素界定层的第一电极的曲面结构上沉积有机层，使得有机层包括与第一电极的曲面结构一致的曲面结构；
在形成有有机层的像素界定层上沉积第二电极，使得所述第二电极包括与有机层的曲面结构一致的曲面结构。
所述方法还可以包括以下步骤：
基板和平坦化层之间形成薄膜晶体管TFT，以及
在辅助层和平坦化层中形成过孔，使得第一电极的边缘部分通过形成在辅助层和平坦化层中的过孔与薄膜晶体管电连接。
图2示出了制造图1A所示的OLED器件的方法的各个步骤的示意图。
具体地，如图2所示，制造图1A所示的OLED器件的方法包括：
步骤1：提供玻璃基板1，并在玻璃基板1上制备TFT；接着在包括TFT 2的基板1上形成平坦化层3，如SiO2；再在平坦化层3上沉积一层具有良好电绝缘性的辅助层4，如PI层，PI层的厚度在1-2微米之间；
步骤2：采取曝光、显影、蚀刻的方式图形化辅助层4，在辅助层4中形成对应像素开口的凹陷的曲面部分，所述曲面部分可以包括平坦的底部和倾斜的侧壁，侧壁的坡度角通常选在0-60度之间；并且，在平坦化层3和辅助层4中刻蚀出与TFT 2的漏极相连的过孔41和31；
步骤3：在如上图形化的辅助层4上沉积一层具有反射功能的第一电极5，并采用蚀刻的方式图形化，使得所述第一电极5包括覆盖在辅助层4的曲面部分上的曲面结构51和从曲面部分51延伸的平坦的边缘部分52，并且所述边缘部分52通过过孔41和31与TFT的漏极电连接；
步骤4：在所述的图形化的第一电极5上涂覆一层像素界定层6，如PI薄膜。然后曝光、显影、蚀刻，形成对应像素开口的开口区域，所述开口区域露出反射电极5的曲面结构51的侧壁；
步骤5：在形成有像素界定层6的反射电极5上，采用如真空蒸镀的方式沉积OLED的有机层7，所述的有机层7可以包括空穴注入层、空穴传输层、发光层、电子传输层、电子注入层等功能层，对于具有串联结构的复杂器件还可以包括电荷产生层，连接层等；最后再在有机层7上沉积顶电极8，所述顶电极8可以为半透半反的金属电极，如银，金，或两者的合金等。
经过上述步骤后，形成具有如图1A所示的结构的OLED器件。
根据另一个实施例的制造OLED器件的方法，可以不在平坦化层3上沉积辅助层4，而将第一电极5直接制备在平坦化层3上，不过该平坦化层3需要比常规的厚度更厚一些，以防止刻蚀图形化后其电绝缘性能下降。具体方法为在TFT2上沉积一层较厚的平坦化层3，如SiO2，然后采用光阻保护、加掩膜、蚀刻等方法形成像素的开口区域，开口的侧壁具有一定坡度角；然后将作为反射电极的第一电极5沉积在平坦化层3上，并对第一电极5进行蚀刻以图形化第一电极5，蚀刻后留下的第一电极5完全覆盖所述的像素开口的区域，并呈现出曲面结构。该实施例的其它步骤与参照图2所示的方法的步骤相同。
本发明实施例的OLED器件，通过形成具有曲面结构的阳极、有机层和阴极，能够改善顶发射OLED的角度依赖性。另外，本发明实施例的OLED器件不需要在顶电极外面增加光学调节层，因此不会由于调节层材料造成的吸收而减少出光；相对于利用不同厚度的多层布拉格衍射层作为反射底电极的工艺，本发明实施例的OLED器件制作工艺简单，而且可以有效利用金属镜的微腔效应，达到提高器件的外量子效率的 同时，降低器件的角度依赖性，尤其适合用于大尺寸OLED显示屏；相对于平面结构的OLED，曲面结构的OLED，增加了有效发光面积，即增大了器件的开口率；能够使光线朝向像素中心会聚，提高亮度；同时，光线沿曲面结构的倾斜侧壁出射，出射角减小，减少了光向相邻像素区域的泄漏。
上述实施例仅例示性的说明了本发明的原理及构造，而非用于限制本发明，本领域的技术人员应明白，在不偏离本发明的总体构思的情况下，对本发明所作的任何改变和改进都在本发明的范围内。本发明的保护范围，应如本申请的权利要求书所界定的范围为准。应注意，措词“包括”不排除其它元件或步骤，措词“一”或“一个”不排除多个。另外，权利要求的任何元件标号不应理解为限制本发明的范围。

Claims (17)

  1. 一种顶发射OLED器件，包括：
    基板；
    设置在基板上的第一电极；
    设置在第一电极上的有机层；和
    设置在有机层上的第二电极，有机层发出的光经由第二电极从OLED器件射出；
    其中，所述第一电极包括凹向所述基板的曲面结构，所述有机层和所述第二电极包括形成在第一电极的曲面结构上的相应的曲面结构。
  2. 根据权利要求1所述的OLED器件，其中，所述第一电极还包括围绕所述曲面结构的平坦的边缘部分。
  3. 根据权利要求1或2所述的OLED器件，其中，所述第一电极的曲面结构包括平坦底部和从平坦底部延伸的倾斜侧壁。
  4. 根据权利要求3所述的OLED器件，其中，所述倾斜侧壁相对于所述平坦底部的角度α满足如下关系式：0°＜α≤60°。
  5. 根据权利要求2或3所述的OLED器件，还包括：
    设置在基板和第一电极之间的平坦化层，所述第一电极的曲面结构凹入所述平坦化层中。
  6. 根据权利要求5所述的OLED器件，还包括：设置在基板和平坦化层之间的薄膜晶体管，其中，第一电极的边缘部分通过形成在平坦化层中的过孔与薄膜晶体管电连接。
  7. 根据权利要求2或3所述的OLED器件，还包括：
    在基板和第一电极之间从基板侧依次设置的平坦化层和辅助层，所述第一电极的曲面结构凹入所述辅助层中。
  8. 根据权利要求7所述的OLED器件，还包括：设置在基板和平坦化层之间的薄膜晶体管，其中，第一电极的边缘部分通过形成在辅助层和平坦化层中的过孔与薄膜晶体管电连接。
  9. 根据权利要求1-8中的任一项所述的OLED器件，还包括：设置在第一电极和第二电极之间并围绕有机层的像素界定层。
  10. 根据权利要求1-9中的任一项所述的OLED器件，还包括：设置在第二电极上的平坦化层。
  11. 一种显示设备，包括如权利要求1-10中的任一项所述的顶发射OLED器件。
  12. 一种制造顶发射OLED器件的方法，包括以下步骤：
    提供基板；
    在基板上形成平坦化层；
    在平坦化层中形成凹陷的曲面部分；
    在包括曲面部分的平坦化层上沉积第一电极，使得所述第一电极包括覆盖在曲面部分上的曲面结构和从曲面部分延伸的平坦的边缘部分。
  13. 根据权利要求12所述的制造顶发射OLED器件的方法，还包括以下步骤：
    在形成有第一电极的平坦化层上形成像素界定层，使得所述像素界定层露出所述第一电极的曲面结构；
    在露出于像素界定层的第一电极的曲面结构上沉积有机层，使得有机层包括与第一电极的曲面结构一致的曲面结构；
    在形成有有机层的像素界定层上沉积第二电极，使得所述第二电极包括与有机层的曲面结构一致的曲面结构。
  14. 根据权利要求13所述的制造顶发射OLED器件的方法，还包括以下步骤：
    在基板和平坦化层之间形成薄膜晶体管；以及
    在平坦化层中形成过孔，使得第一电极的边缘部分通过形成在平坦化层中的过孔与薄膜晶体管电连接。
  15. 一种制造顶发射OLED器件的方法，包括以下步骤：
    提供基板；
    在基板上形成平坦化层；
    在平坦化层上形成辅助层；
    在辅助层中形成凹陷的曲面部分；
    在包括曲面部分的辅助层上沉积第一电极，使得所述第一电极包括覆盖在曲面部分上的曲面结构和从曲面部分延伸的平坦的边缘部分。
  16. 根据权利要求15所述的制造顶发射OLED器件的方法，还包括以下步骤：
    在形成有第一电极的辅助层上形成像素界定层，使得所述像素界定层露出所述第一电极的曲面结构；
    在露出于像素界定层的第一电极的曲面结构上沉积有机层，使得有机层包括与第一电极的曲面结构一致的曲面结构；
    在形成有有机层的像素界定层上沉积第二电极，使得所述第二电极包括与有机层的曲面结构一致的曲面结构。
  17. 根据权利要求16所述的制造顶发射OLED器件的方法，还包括以下步骤：
    在基板和平坦化层之间形成薄膜晶体管，以及
    在辅助层和平坦化层中形成过孔，使得第一电极的边缘部分通过形成在辅助层和平坦化层中的过孔与薄膜晶体管电连接。
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