WO2019041899A1 - 显示面板、显示装置及显示面板制作方法 - Google Patents

显示面板、显示装置及显示面板制作方法 Download PDF

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Publication number
WO2019041899A1
WO2019041899A1 PCT/CN2018/088031 CN2018088031W WO2019041899A1 WO 2019041899 A1 WO2019041899 A1 WO 2019041899A1 CN 2018088031 W CN2018088031 W CN 2018088031W WO 2019041899 A1 WO2019041899 A1 WO 2019041899A1
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WIPO (PCT)
Prior art keywords
total reflection
display panel
light emitting
light
substrate
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PCT/CN2018/088031
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English (en)
French (fr)
Inventor
宫奎
段献学
陈程
徐德智
王铖铖
Original Assignee
京东方科技集团股份有限公司
合肥京东方光电科技有限公司
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Application filed by 京东方科技集团股份有限公司, 合肥京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/323,611 priority Critical patent/US11329258B2/en
Priority to EP18839664.2A priority patent/EP3694011A4/en
Publication of WO2019041899A1 publication Critical patent/WO2019041899A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks

Definitions

  • the organic light-emitting diode (OLED) display device has the advantages of self-luminescence, fast response, high brightness, bright color, light weight, low energy consumption, and the like, and has attracted more and more attention. OLED display technology has gradually been applied to mobile phones, computer monitors, televisions, and the like.
  • At least one embodiment of the present disclosure provides a display panel including: a substrate substrate, a plurality of arrayed pixel units, and a total reflection structure.
  • Each of the pixel units includes a light emitting region and a light emitting device located in the light emitting region; the total reflection structure is disposed on the light exiting side of the light emitting device and at least partially surrounds the light emitting region; wherein the total reflection structure includes the main body structure and the light emitting device facing the main body structure A second structure of the side surface, the second structure having a refractive index greater than a refractive index of the body structure.
  • the second structure of the total reflection structure further covers an upper surface of the main structure away from the substrate.
  • the second structure of the total reflection structure is further configured to cover a flat layer of the base substrate, and an upper surface of the flat layer away from the base substrate and a total reflection structure
  • the main structure is flush with the upper surface of the base substrate; or the flat layer covers the main structure of the total reflection structure.
  • the main structure of the total reflection structure has a trapezoidal shape or a rectangular shape in a cross-sectional shape perpendicular to the direction of the substrate.
  • the material of the total reflection structure is a transparent material.
  • the material of the main structure of the total reflection structure is a first inorganic material or a first resin material
  • the material of the second structure of the total reflection structure is a second inorganic material or a second resin. a material; the first inorganic material is different from the second inorganic material, the first resin material being different from the second resin material.
  • a display panel further includes a flat layer disposed on the base substrate, covering the total reflection structure and the base substrate, and the light emitting device is disposed on the flat layer.
  • a light emitting device in a display panel provided by an embodiment of the present disclosure, includes an anode, a light emitting layer, and a cathode.
  • the anode is disposed on the flat layer
  • the light emitting layer is disposed on the anode
  • the cathode covers the light emitting layer.
  • the light emitting device is of a bottom emission type.
  • a display panel further includes a pixel driving circuit disposed on the substrate; the pixel driving circuit is at least partially covered by the total reflection structure in a direction perpendicular to the substrate.
  • a display panel provided by an embodiment of the present disclosure further includes a pixel defining layer including a pixel dividing portion disposed between the light emitting devices and an opening portion corresponding to the light emitting region to define a plurality of pixel units.
  • At least one embodiment of the present disclosure also provides a display device including any of the above display panels.
  • At least one embodiment of the present disclosure further provides a method for fabricating a display panel, the method comprising: providing a substrate, wherein the substrate is provided with a plurality of pixel units arranged in an array, wherein each pixel unit includes a light emitting region Forming a light emitting device in the light emitting region; and forming a total reflection structure at a light exiting side of the light emitting device, the total reflection structure at least partially surrounding the light emitting region; wherein the total reflection structure includes a body structure and a second surface covering the side of the body structure facing the light emitting device The structure, the refractive index of the second structure is greater than the refractive index of the bulk structure.
  • the display panel further includes a pixel driving circuit disposed on the substrate; the pixel driving circuit is at least perpendicular to the substrate Part is covered by the total reflection structure.
  • 1 is a schematic structural view of a display panel
  • Figure 3A is a schematic cross-sectional view taken along line I-I' of Figure 2;
  • Figure 3B is another schematic cross-sectional view taken along line I-I' of Figure 2;
  • Figure 3C is a schematic cross-sectional view taken along line I-I' of Figure 2;
  • Figure 3D is a schematic cross-sectional view taken along line I-I' of Figure 2;
  • FIG. 4A is a schematic cross-sectional view of a total reflection structure of a display panel in a direction perpendicular to a substrate substrate according to an embodiment of the present disclosure
  • 4B is a schematic cross-sectional view of another total reflection structure of a display panel in a direction perpendicular to a substrate substrate according to an embodiment of the present disclosure
  • 4D is a schematic diagram of the principle of total reflection of light
  • 6A-6L are schematic diagrams of a method for fabricating a display panel according to an embodiment of the present disclosure.
  • OLED devices can be classified into a bottom-emitting type and a top-emitting type or a double-sided type.
  • the light emitted from the organic light-emitting layer not only propagates in a direction perpendicular to the substrate, but also laterally, which easily forms crosstalk to the light-emitting state of the light-emitting region of the adjacent pixel unit.
  • the display panel is an organic light emitting display panel, comprising: a base substrate 1 ′ and a plurality of pixel units disposed on the base substrate 1 ′, each of the pixel units including the light emitting region H and the light emitting region Light-emitting device 13' of H.
  • a pixel driving circuit is provided on the base substrate 1', the pixel driving circuit includes a thin film transistor switch 4', and at least a portion of the thin film transistor 4' is covered by the pixel defining layer 9'.
  • a gate insulating layer 2' covering the gate of the thin film transistor 4', an interlayer insulating layer 3' covering the active layer of the thin film transistor 4', and a passivation covering the substrate substrate 1' are further disposed on the base substrate 1'.
  • the display panel further includes a pixel defining layer 9' disposed over the planar layer 16 and wound around the edge of the light emitting region 13' for defining a plurality of pixel regions.
  • the light emitting device 13 is disposed above the planar layer 16, a portion of which is covered by the pixel defining layer 9'.
  • the light-emitting device 13' of the display panel is of a bottom emission type, and a part of the light emitted therefrom sequentially passes through the flat layer 16, the passivation layer 5', the interlayer insulating layer 3', and the like, and is emitted from the lower side of the base substrate 1'.
  • the light emitted from the light-emitting device 13' not only propagates in the vertical direction perpendicular to the substrate 1', but also in the lateral direction parallel to the substrate 1', for example, a part of the light is in the flat layer. 16. Transverse propagation in the passivation layer 5' and the interlayer insulating layer 3'.
  • a part of the light emitted from the light-emitting device in a certain pixel unit is laterally propagated to the light-emitting area of the adjacent pixel unit, thereby causing the light-emitting state of the light-emitting area of the adjacent pixel unit to be formed.
  • Crosstalk since light is simultaneously propagated in the above-mentioned vertical direction and lateral direction, a part of light may be irradiated to the thin film transistor 4', resulting in photo-induced leakage of the thin film transistor 4', which affects the display function.
  • At least one embodiment of the present disclosure provides a display panel including: a substrate substrate, a plurality of arrayed pixel units, and a total reflection structure.
  • Each of the pixel units includes a light emitting region and a light emitting device located in the light emitting region; a total reflection structure is disposed on the light emitting side of the light emitting device and at least partially surrounds the light emitting region; the total reflection structure includes a body structure and a side surface of the body structure facing the light emitting device In a second structure, the second structure has a refractive index greater than a refractive index of the body structure.
  • FIG. 2 is a schematic plan view of a display panel according to an embodiment of the present disclosure
  • FIG. 3A is a cross-sectional view taken along line II' of FIG. 2
  • FIG. 3B is an I along FIG.
  • FIG. 3C is another cross-sectional view taken along line II' of FIG. 2
  • FIG. 3D is another cross-sectional view taken along line II' of FIG. 2. .
  • the display panel 10 includes a base substrate 1, a plurality of pixel units disposed on the base substrate 1, and a total reflection structure 6.
  • Each of the pixel units includes a light emitting region 101 and a light emitting device 13 located within the light emitting region 101.
  • the total reflection structure 6 is disposed on the light exiting side of the light emitting device 13.
  • the light emitting surface of the light emitting device 13 is the lower surface thereof in the figure, so the total reflection structure 6 is disposed on the light emitting device 13.
  • FIG. 3 the light emitting surface of the light emitting device 13 is the lower surface thereof in the figure, so the total reflection structure 6 is disposed on the light emitting device 13.
  • the total reflection structure 6 surrounds the entire illumination area 101, but in other embodiments of the present disclosure, the total reflection structure 6 may also surround a portion of the illumination area 101, ie, the total reflection structure 6
  • the flat graphics are not closed. That is, the total reflection structure 6 at least partially surrounds the light-emitting region 101.
  • the total reflection structure 6 includes a body structure 601 and a second structure 602 covering the side surface 6012 of the body structure 601 facing the light emitting device 13, the second structure 602 having a refractive index greater than that of the body structure 601.
  • Total reflection means that light is emitted from a light-tight medium (a medium having a large refractive index in this medium, hereinafter referred to as a large refractive index) to a light-diffusing medium (a medium having a small refractive index in the medium, hereinafter referred to as a medium) When the interface with a small refractive index is completely reflected back into the original medium.
  • a light-tight medium a medium having a large refractive index in this medium, hereinafter referred to as a large refractive index
  • a light-diffusing medium a medium having a small refractive index in the medium
  • the necessary conditions for total reflection to occur are: (1) light must be directed from the optically dense medium to the light-diffusing medium; (2) the angle of incidence is greater than or equal to the critical angle i c .
  • the refractive index of the second structure 602 is larger than the refractive index of the main structure 601
  • light is incident from a medium having a larger refractive index to a medium having a smaller refractive index, according to the principle of total light reflection.
  • the incident angle of the incident light When the incident angle of the incident light is greater than the total reflection critical angle, the incident light will be totally reflected, which can reduce or avoid the light propagating in the lateral direction (for example, non-perpendicular to the substrate substrate) to enter the adjacent pixel.
  • the light-emitting area of the unit improves or avoids the phenomenon that the light-emitting state of the light-emitting area of the adjacent pixel unit is crosstalked, which is advantageous for obtaining better display quality.
  • the total reflection structure 6 is disposed around the light-emitting region 101, and the light-emitting region is not blocked to reduce the light emission rate of the light-emitting region 101. Instead, the total reflection structure 6 prevents the light from propagating in the lateral direction, thereby increasing the light emission rate and improving the light. Utilization efficiency.
  • the second structure 602 of the total reflection structure 6 is a flat layer covering the base substrate 1, and the upper surface 601 of the flat layer away from the base substrate 1 and the main structure of the total reflection structure are away from the substrate.
  • the upper surface 6011 of the substrate 1 is substantially flush. This makes it possible to simplify the structure of the display panel 10 while reducing or avoiding light propagating in the lateral direction from entering the light-emitting region of the adjacent pixel unit by utilizing the principle of total light reflection.
  • the flat layer may provide a flat surface for providing the light emitting device 13 thereon.
  • FIG. 4A is a schematic cross-sectional view of a total reflection structure of a display panel in a direction perpendicular to a substrate substrate according to an embodiment of the present disclosure
  • FIG. 4B is another vertical reflection structure of the display panel according to an embodiment of the present disclosure
  • FIG. 4C is a schematic cross-sectional view of a main structure of a total reflection structure of the display panel along a direction perpendicular to the substrate
  • FIG. 4D is a schematic diagram of total reflection of light.
  • the main structure 601 of the total reflection structure 6 has a trapezoidal shape or a rectangular shape in a cross-sectional shape perpendicular to the substrate substrate 1.
  • the cross-sectional shape of the main body structure 601 is trapezoidal and the length of the upper base of the trapezoid is smaller than the length of the lower base. Since the refractive index of the second structure 602 is greater than the refractive index of the main structure 601, when the light emitted from the light emitting device 13 is directed to the interface of the second structure 602 and the main structure 601, the critical angle at which total reflection occurs is ⁇ . When the angle of incidence is greater than ⁇ , this portion of the light will all be reflected back to the illuminating region 101.
  • the incident angle is ⁇
  • the angle between the incident ray and the substrate 1 is a
  • the incident ray with the substrate substrate 1 at an angle greater than a has an incident angle greater than ⁇
  • all of the rays will be totally reflected.
  • the refractive index of the second structure 602 differs from the refractive index of the main structure 601, and the smaller the critical angle C, the larger the range of the total reflected light.
  • the cross-sectional shape of the main body structure 601 shown in Fig. 3A is the case shown in Fig. 4A, but the cross-sectional shape is not limited to such a shape.
  • the cross section of the main structure 601 may also be a rectangle as shown in FIG.
  • the critical angle at which total reflection occurs is ⁇ , and when the incident angle is ⁇ , the angle between the incident ray and the base substrate 1 is b. Similarly, the total incident angle of the incident light with the substrate substrate 1 greater than b will be totally reflected.
  • the critical angle at which total reflection occurs is ⁇ , and when the incident angle is ⁇ , the angle between the incident ray and the base substrate 1 is c. Similarly, the total incident angle of the incident light with the substrate substrate 1 greater than c will be totally reflected.
  • the above-described shape of the cross section of the main body structure 601 is only a few embodiments. In other embodiments of the present disclosure, the shape of the cross section of the main body structure 601 is not limited to the types listed above.
  • the material of the total reflection structure 6 may be a transparent material, and the main structure 601 and the second structure 602 may both be transparent structures so as not to block the propagation of light from the light emitting device 13 in the vertical direction.
  • the main structure 601 of the total reflection structure 6 may also be an opaque material.
  • the material of the main structure 601 of the total reflection structure 6 may be a first inorganic material, such as magnesium fluoride having a lower refractive index, or a first resin material; and the material of the second structure 602 of the total reflection structure 6 is a second inorganic material.
  • a material such as silicon nitride having a higher refractive index or a second resin material.
  • the light emitting device 13 includes an anode 7 disposed on the flat layer, a light emitting layer 8 disposed on the anode 7, and a cathode 11 covering the light emitting layer 8.
  • the light-emitting device 13 is of a bottom emission type, and light emitted from the light-emitting layer 8 is emitted from the lower side of the base substrate 1.
  • the cathode 11 is a reflective layer, or a separate reflective layer is disposed adjacent to the cathode 11, so that a part of the light emitted by the luminescent layer 8 can be reflected, which is advantageous for increasing the transmittance of light, thereby improving the utilization of light.
  • the cathode 11 may be a metal layer having a higher reflectivity surface, such as aluminum, silver, or the like.
  • the material of the cathode 11 is not limited to the listed ones, and the embodiment of the present disclosure does not limit this.
  • the display panel 10 may further include a pixel driving circuit disposed on the base substrate 1, and the pixel driving circuit is at least partially covered by the total reflection structure 6 in a direction perpendicular to the substrate substrate 1.
  • the pixel driving circuit may include a thin film transistor switch 4, a gate line 20, a data line 21, and the like, and the thin film transistor switch 4 includes a gate, a semiconductor layer above the gate, and a semiconductor layer. Separate source and drain settings.
  • the display panel 10 further includes a gate insulating layer 2 covering the gate electrode, an interlayer insulating layer 3 covering the semiconductor layer, and a passivation layer 5 covering the thin film transistor 4 and the substrate 1 in the flat layer (the second structure of the total reflection structure)
  • a via hole 12 is provided in the portion for bringing a portion of the anode 7 of the light-emitting device 13 into contact with the drain through the via hole 12, thereby achieving electrical connection between the anode 7 and the drain.
  • a portion of the thin film transistor 4 and a portion of the gate line 20 and the data line 21 are covered by the reflective structure 6 in a direction perpendicular to the base substrate 1.
  • the total reflection structure 6 can also improve or avoid the light propagating in the vertical direction and the lateral direction simultaneously to the thin film transistor 4, thereby improving or avoiding the occurrence of photo-induced leakage of the thin film transistor 4 and affecting the display function.
  • the display panel 10 further includes a pixel defining layer 9 including a pixel dividing portion disposed between the light emitting devices and an opening portion corresponding to the light emitting region 101 to define a plurality of pixel units.
  • the pixel dividing portion of the pixel defining layer 9 may be disposed around the light emitting region 101.
  • the pixel separation portion is located above the total reflection structure 6, and the pixel separation portion overlaps the total reflection structure 6 in a direction perpendicular to the substrate substrate 1.
  • the pixel separation portion may also overlap with a portion of the total reflection structure 6.
  • FIG. 3B shows another embodiment of the present disclosure, which differs from the embodiment shown in FIG. 3A in that the second structure 602 of the total reflection structure 6 covers the upper surface 6011 of the main body structure 601 away from the substrate 1 . That is, the flat layer covers the body structure 602 of the total reflection structure 6.
  • Such a structure can also reduce or prevent the light propagating in the lateral direction from entering the light-emitting region of the adjacent pixel unit by the above-described principle of total light reflection, achieving the same or similar technical effect as the embodiment shown in FIG. 3A.
  • the manufacturing method of the structure is relatively simple.
  • the above embodiment is a case where the second structure of the total reflection structure is a flat layer at the same time, and the flat layer is not used as the second structure of the total reflection structure.
  • the second structure 602 covers the side 6012 of the body structure 601 that faces the light emitting structure 13.
  • the display panel 10 further includes a flat layer 15 disposed above the base substrate 1, covering the total reflection structure 6 and the base substrate 1, and the light emitting device 13 is disposed on the flat layer 15.
  • This structure can also achieve the same or similar technical effects as the previously described embodiments.
  • the materials of the main structure 601 and the second structure 602 and other structures of the display panel 10 are the same as those in FIG. 3A, please refer to the above description.
  • the second structure 602 of the total reflection structure 6 may further cover the upper surface 6011 of the main body structure 601 away from the base substrate 1, and the flat layer 15 covers the total reflection structure 6 and the base substrate 1, the structure Technical effects identical or similar to those of the previously described embodiments can also be achieved.
  • the materials of the main structure 601 and the second structure 602 and other structures of the display panel 10 are the same as those in FIG. 3A, please refer to the above description.
  • an embodiment of the present disclosure is an example of a light-emitting device as a bottom-emitting type.
  • the light-emitting device may also be a top-emitting type, and light is emitted from the upper side of the display panel away from the substrate.
  • the total reflection structure is disposed on a side of the light emitting device away from the substrate; or the light emitting device may be a double-sided light type. In this case, it may be on the side of the light emitting device facing the substrate and away from the substrate.
  • a full reflection structure is disposed on one side of the base substrate.
  • At least one embodiment of the present disclosure further provides a display device including any of the display panels provided by the embodiments of the present disclosure.
  • the display device can be an organic light emitting diode display device.
  • the display device can be implemented as a product such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, or the like having a display function.
  • FIG. 5 is a schematic diagram of a display device according to an embodiment of the present disclosure.
  • the display device 100 includes any of the display panels 10 provided by the embodiments of the present disclosure, and may further include a driving device 17 and a controller 18.
  • the driving device 17 is configured to be capable of modulating a potential signal applied to electrodes of the light emitting devices of the respective pixel regions of the display panel 10 to establish a driving electric field, thereby realizing a display effect of the display device 100 during display.
  • the drive device 17 can be, for example, a drive circuit or the like.
  • the controller 18 is configured to be capable of controlling the operation of the drive device 17, such as controlling serial display data and scan control timing to control the display device display state.
  • the controller 18 can be implemented in various forms such as a central processing unit (CPU), a signal processor, a programmable controller (PLC), and the like.
  • CPU central processing unit
  • PLC programmable controller
  • the display device 100 can also be a touch display device, and can also include a touch substrate (not shown), a touch detection device (not shown), etc., at this time, the controller 18 can also control the driving device 17
  • the touch scan signal is controlled, and the detection result from the touch detection device is received, converted into coordinate information, and the display state of the display device is controlled.
  • Those skilled in the art can rationally design the configuration and use of the driving device and the controller according to the requirements of the specific product.
  • the display device provided by the embodiment of the present disclosure can improve or avoid the light emitted by the light emitting device in the lateral direction from entering the light emitting region of the adjacent pixel unit, and improve or avoid the light emitting state of the light emitting region of the adjacent pixel unit.
  • the problem of crosstalk is beneficial to get better display quality.
  • At least one embodiment of the present disclosure further provides a method for fabricating a display panel, the method comprising: providing a substrate provided on the substrate substrate with a plurality of arrays of pixel units, each of the pixel units including a light emitting region; Forming a light emitting device; and forming a total reflection structure at a light exiting side of the light emitting device, the total reflection structure at least partially surrounding the light emitting region; wherein the total reflection structure comprises a body structure and a second structure covering a side of the body structure facing the light emitting device, the second The refractive index of the structure is greater than the refractive index of the bulk structure.
  • a base substrate 1 is provided, and a pixel drive circuit is provided on the base substrate 1.
  • the pixel driving circuit includes a thin film transistor 4 arranged in an array, gate lines and data lines (not shown) disposed laterally and vertically, and the like, and defines a plurality of pixel units arranged in an array on the substrate 1 , each The pixel unit includes a light emitting area.
  • a gate insulating layer 2 covering the gate of the thin film transistor 4 and an interlayer insulating layer 3 covering the semiconductor layer are further provided on the base substrate 1.
  • a passivation layer 5 covering the thin film transistor 4 and the base substrate 1 is formed to protect the substrate 1 and the pixel driving circuit disposed thereabove.
  • the display panel manufacturing method includes forming a total reflection structure 6 on the light exiting side of the light emitting device 13.
  • the display panel is of a bottom emission type, so that the total reflection structure 6 is formed under the light emitting device 13.
  • the total reflection structure 6 includes a body structure 601 and a second structure 602 that covers a side surface 6012 of the body structure 601 that faces the light emitting device.
  • a body structure layer 6' is formed over the passivation layer 5 for forming the body structure 601 of the total reflection structure 6, such that the total reflection structure 6 at least partially surrounds the light-emitting region.
  • the main structural layer 6' when the material of the main structural layer 6' is the above-described first resin and the first resin is a photosensitive resin, the main structural layer 6' may be formed by a method such as coating (spin coating or doctor coating).
  • the material of the main structural layer 6' is the above-mentioned first inorganic material, for example, magnesium fluoride
  • the main structural layer 6' may be formed by a method such as vapor deposition or chemical vapor deposition.
  • the main structure of the total reflection structure may be formed by exposure-development using a mask. As shown in FIG. 6C, the main structure layer 6' may be covered by a mask 14 which includes an exposed area and a non-exposed area.
  • the main structure layer 6' is a photosensitive resin having positive photoresist properties
  • the portion forming the main structure corresponds to the non-exposed area
  • the other portion corresponds to the exposed area
  • the appropriate exposure intensity is adjusted, and the exposure intensity of the portion corresponding to the exposed portion of the main structural layer 6' is away from the substrate 1 to the substrate 1
  • the position gradually decreases.
  • the main body structure 601 as shown in FIG. 6D is formed by the development process, and the cross section perpendicular to the direction of the substrate 1 is trapezoidal, and the length of the upper base of the trapezoid is smaller than the length of the lower base.
  • the main structural layer 6' is a photosensitive resin having a negative photoresist property
  • a portion for forming a main structure corresponds to an exposure region, and other portions correspond to a non-exposed region, and an appropriate exposure intensity is adjusted, and the main structural layer 6
  • the exposure intensity of the portion corresponding to the exposure region is gradually decreased from a position away from the base substrate 1 to a position close to the substrate substrate 1.
  • the main body structure 601 as shown in FIG. 4A is formed, and the cross section perpendicular to the direction of the substrate 1 is trapezoidal, and the length of the upper base of the trapezoid is larger than the length of the lower base.
  • the exposure process employs a large exposure intensity
  • the exposure intensity of the portion of the main structural layer 6' corresponding to the exposed region is sufficiently exposed from a position away from the substrate 1 to the substrate 1.
  • the developing process is performed to form the main structure 601 as shown in FIG. 4B, and the cross section perpendicular to the direction of the substrate 1 is rectangular.
  • a person skilled in the art can design a corresponding exposure mode according to the specific shape of the main body structure 601 to be formed, which is not limited by the embodiment of the present disclosure.
  • forming the total reflection structure 6 includes forming a second layer 602 that covers the planar layer of the substrate substrate 1 as the total reflection structure 6.
  • the upper surface 6021 of the flat layer away from the substrate 1 may be substantially flush with the upper surface 6011 of the body structure 601; or, as shown in FIG. 6E, the flat layer may cover the body structure 601.
  • the refractive index of the second structure 602 is greater than the refractive index of the main structure 601.
  • the material of the second structure 602 may be the second resin material or silicon nitride as described above. For the specific material, refer to the description in the first embodiment. No longer.
  • the second structure 602 may be formed according to a specific material type. For example, if the material of the second structure 602 is silicon nitride, chemical vapor deposition may be used; if the material of the second structure 602 is the first embodiment As the second resin material, a coating method can be employed.
  • a via hole 12 exposing a portion of the drain is formed in the flat layer and the passivation layer 5, and the via hole 12 may be formed by photolithography, for example.
  • the display panel manufacturing method further includes forming a light emitting device in the light emitting region, and the light emitting device may be formed by an evaporation method.
  • Forming the light emitting device may include forming an anode on the flat layer; forming a light emitting layer on the anode; and forming a cathode on the light emitting layer.
  • an anode layer 7' of a light-emitting device is formed over the flat layer for forming an anode. A portion of the anode layer is in contact with the drain through vias 12 to effect electrical contact of the anode layer 7' with the drain.
  • the anode layer 7' can be patterned by photolithography to form an anode 7 located in the light-emitting region, and an opening is formed at a position corresponding to the total reflection structure 6.
  • the display panel fabrication method further includes forming a pixel defining layer 9.
  • the pixel defining layer 9 can be formed over the total reflection structure 6 by photolithography.
  • the pixel defining layer 9 includes a pixel separating portion disposed between the light emitting devices and an opening portion corresponding to the light emitting region to define respective pixel regions, which is advantageous for preventing crosstalk between adjacent light emitting regions.
  • the pixel dividing portion of the pixel defining layer 9 may be disposed around the light emitting region 101.
  • the pixel dividing portion overlaps with the total reflection structure 6 in a direction perpendicular to the base substrate 1.
  • the pixel separation portion may also overlap with a portion of the total reflection structure 6.
  • the light-emitting layer 8 is formed in the light-emitting region, and for example, the light-emitting layer 8 may be an organic light-emitting material.
  • a cathode 11 is formed on the light-emitting layer 8, and the cathode 11 can cover the light-emitting layer and the pixel defining layer 9.
  • a display panel as shown in FIG. 6L is formed.
  • the light emitting device 13 is of a bottom emission type, so the cathode 11 is a reflective layer, and may be formed of a metal material having a high reflectivity, such as aluminum or silver, or an adjacent cathode 11 .
  • a separate reflective layer can be provided, which can be made of a metal material; the material of the anode 7 is a transparent conductive material to facilitate light emission, such as indium tin oxide (ITO) or indium zinc oxide (IZO).
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • the total reflection structure is formed prior to the light emitting device, but in other embodiments, the total reflection structure may also be formed after the light emitting device is formed, and the embodiment of the present disclosure is not limited to forming the light emission.
  • the sequence of devices and the formation of a total reflection structure are not limited to forming the light emission.
  • the incident angle of incident light is greater than When the critical angle is totally reflected, the incident light will be totally reflected, which can reduce or avoid the light propagating in the lateral direction from entering the light emitting region of the adjacent pixel unit, thereby improving or avoiding the adjacent pixel unit thus caused.
  • the illuminating state of the illuminating region is subject to crosstalk, which is advantageous for obtaining better display quality.
  • the pixel drive circuit is at least partially covered by the total reflection structure in a direction perpendicular to the base substrate 1.
  • a portion of the thin film transistor 4 and a portion of the gate line 20 and the data line 21 are covered by the reflective structure 6.
  • the total reflection structure 6 can also improve or avoid the light propagating in the vertical direction and the lateral direction simultaneously to the thin film transistor 4, thereby improving or avoiding the occurrence of photo-induced leakage of the thin film transistor 4 and affecting the display function.
  • the above embodiment is a case where the flat layer is the second structure of the total reflection structure, and the flat layer may not be used as the second structure.
  • the second structural layer 602' covering the main structure 601 is formed.
  • the second structural layer 602' is patterned by a photolithography process or an exposure-developing process to form a second structure 602 covering the main structure 601 as shown in FIG. 7B; or, a cover main structure 601 as shown in FIG. 7C is formed.
  • the second structural layer 602' covering the upper surface 6011 portion of the main structure 601 may be removed by an etching method or a grinding method (for example, a chemical mechanical polishing method); or, in other embodiments, When the second structural layer 602' is formed, its upper surface is substantially flush with the upper surface of the body structure.
  • the material of the second structure 602 may be a second inorganic material, such as silicon nitride, or a second resin material.
  • the second structure is a specific process of patterning.
  • the display panel manufacturing method provided by the embodiment shown in FIG. 7D or FIG. 7E further includes forming a flat layer 15 on the base substrate 1, and the flat layer 15 covers the total reflection structure 6 and the base substrate, so that the light emitting device 13 is disposed. Provide a flat surface.
  • the subsequent steps are the same as the step embodiments shown in FIGS. 6G-6L, please refer to the previous description.
  • the display panel formed by this method can achieve the same or similar technical effects as the display panel formed by the embodiment shown in FIGS. 6A-6L.

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Abstract

一种显示面板、显示装置及显示面板制作方法。该显示面板(10)包括：衬底基板(1)、多个阵列排布的像素单元和全反射结构(6)。每个像素单元包括发光区域(101)以及位于发光区域(101)内的发光器件；全反射结构(6)设置于发光器件的出光侧且至少部分围绕发光区域(101)。全反射结构(6)包括主体结构(601)和覆盖主体结构的朝向发光器件的侧面(6012)的第二结构(602)，该第二结构(602)的折射率大于该主体结构(601)的折射率。该显示面板(10)能够改善或避免在横向方向传播的光射入相邻像素单元的发光区域的现象，从而改善或避免因此而导致的该相邻像素单元的发光区域的发光状态受到串扰的问题。

Description

显示面板、显示装置及显示面板制作方法
本申请要求于2017年8月31日递交的中国专利申请第201710771763.X号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开至少一实施例涉及一种显示面板、显示装置及显示面板制作方法。
背景技术
有机发光二极管(Organic Light-Emitting Diode，简称OLED)显示装置相对于液晶显示装置具有自发光、反应快、亮度高、色彩鲜艳、轻薄、低能耗等优点，越来越受到广泛的关注。OLED显示技术已经逐渐被到应用于手机、电脑显示器、电视等。
发明内容
本公开至少一实施例提供一种显示面板，该显示面板包括：衬底基板、多个阵列排布的像素单元和全反射结构。每个像素单元包括发光区域以及位于发光区域内的发光器件；全反射结构设置于发光器件的出光侧且至少部分围绕发光区域；其中，全反射结构包括主体结构和覆盖主体结构的朝向发光器件的侧面的第二结构，该第二结构的折射率大于该主体结构的折射率。
例如，本公开一实施例提供的显示面板中，全反射结构的第二结构还覆盖主体结构的远离所述衬底基板的上表面。
例如，本公开一实施例提供的显示面板中，全反射结构的第二结构还配置为覆盖所述衬底基板的平坦层，该平坦层的远离所述衬底基板的上表面和全反射结构的主体结构的远离所述衬底基板的上表面齐平；或者该平坦层覆盖全反射结构的主体结构。
例如，本公开一实施例提供的显示面板中，全反射结构的主体结构沿垂直于衬底基板方向的截面形状为梯形或矩形。
例如，本公开一实施例提供的显示面板中，全反射结构的材料为透明材料。
例如，本公开一实施例提供的显示面板中，全反射结构的主体结构的材料为第一无机材料或第一树脂材料，全反射结构的第二结构的材料为第二无机材料或第二树脂材料；所述第一无机材料和所述第二无机材料不同，所述第一树脂材料与所述第二树脂材料不同。
例如，本公开一实施例提供的显示面板还包括平坦层，该平坦层设置于衬底基板上，覆盖全反射结构和衬底基板，发光器件设置于该平坦层上。
例如，本公开一实施例提供的显示面板中，发光器件包括：阳极、发光层和阴极。阳极设置于平坦层上，发光层设置于阳极上，阴极覆盖发光层。该发光器件为底发光型。
例如，本公开一实施例提供的显示面板还包括设置于衬底基板上的像素驱动电路；在垂直于衬底基板的方向上，该像素驱动电路至少部分被全反射结构覆盖。
例如，本公开一实施例提供的显示面板还包括像素界定层，该像素界定层包括设置于发光器件之间的像素分隔部分和对应于发光区域的开口部分，以限定出多个像素单元。
本公开至少一实施例还提供一种显示装置，包括上述任意一种显示面板。
本公开至少一实施例还提供一种显示面板制作方法，该方法包括：提供衬底基板，所述衬底基板上设置有多个阵列排布的像素单元，其中，每个像素单元包括发光区域；在发光区域形成发光器件；以及在发光器件的出光侧形成全反射结构，全反射结构至少部分围绕发光区域；其中，全反射结构包括主体结构和覆盖主体结构的朝向发光器件的侧面的第二结构，第二结构的折射率大于主体结构的折射率。
例如，本公开一实施例提供的显示面板制作方法中，所述形成全反射结构包括形成覆盖衬底基板的平坦层以作为全反射结构的第二结构；该平坦层的远离所述衬底基板的上表面和主体结构的远离所述衬底基板的上表面齐平；或者该平坦层覆盖所述主体结构。
例如，本公开一实施例提供的显示面板制作方法还包括在衬底基板上形成平坦层，该平坦层覆盖全反射结构和衬底基板。
例如，本公开一实施例提供的显示面板制作方法中，所述显示面板还包括设置在衬底基板上的像素驱动电路；在垂直于所述衬底基板的方向上，所述像素驱动电路至少部分被所述全反射结构覆盖。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1为一种显示面板的结构示意图；
图2为本公开一实施例提供的一种显示面板的平面示意图；
图3A为沿图2中的I-I’线的一种剖面示意图；
图3B为沿图2中的I-I’线的另一种剖面示意图；
图3C为沿图2中的I-I’线的又一种剖面示意图；
图3D为沿图2中的I-I’线的又一种剖面示意图；
图4A为本公开一实施例提供的显示面板的一种全反射结构的沿垂直于衬底基板方向的截面示意图；
图4B为本公开一实施例提供的显示面板的另一种全反射结构的沿垂直于衬底基板方向的截面示意图；
图4C为本公开一实施例提供的显示面板的又一种全反射结构的沿垂直于衬底基板方向的截面示意图；
图4D为光的全反射原理示意图；
图5为本公开一实施例提供的一种显示装置示意图；
图6A-6L为本公开一实施例提供的一种显示面板制作方法的示意图；
图7A-7E为本公开一实施例提供的另一种显示面板制作方法的示意图。
附图标记
1-衬底基板；1’-衬底基板；2-栅绝缘层；2’-栅绝缘层；3-层间绝缘层；3’-层间绝缘层；4-薄膜晶体管开关；4’-薄膜晶体管开关；5-钝化层；5’-钝化层；6-全反射结构；601-主体结构；6011-主体结构的上表面；6012-主体结构的侧面；602-第二结构；6021-第二结构的上表面； 6’-主体结构层；7-阳极；7’-阳极层；8-发光层；9-像素界定层；9’-像素界定层；10-显示面板；11-阴极；12-过孔；13-有机发光器件；13’-有机发光器件；14-掩模板；15-平坦层；16-平坦层；17-驱动装置；18-控制器；20-栅线；21-数据线；100-显示装置；101-发光区域。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。以下所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其它实施例，都属于本公开保护的范围。
除非另作定义，此处使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
本公开中的附图的尺寸并不是严格按实际比例绘制，各个结构的具体地尺寸和数量可根据实际需要进行确定。显示面板中的像素单元个数也不是限定为图中所示的数量，本公开中所描述的附图仅是结构示意图。
根据发光方向的不同，OLED器件可分为底发光型和顶发光型或者是双面发光型等类型。但是，有机发光层发出的光线不仅会在垂直于衬底基板的方向上传播，也会横向传播，这样容易对相邻像素单元的发光区域的发光状态形成串扰。
图1是一种显示面板的结构示意图。如图1所示，该显示面板为有机发光显示面板，其包括：衬底基板1’和设置在衬底基板1’上的多个像素单元， 每个像素单元包括发光区域H和位于发光区域H的发光器件13’。衬底基板1’上设置有像素驱动电路，像素驱动电路包括薄膜晶体管开关4’，至少部分薄膜晶体管4’被像素界定层9’覆盖。衬底基板1’上还设置有覆盖薄膜晶体管4’的栅极的栅绝缘层2’、覆盖薄膜晶体管4’的有源层的层间绝缘层3’、覆盖衬底基板1’的钝化层5’和设置于钝化层5’上方的平坦层16。该显示面板还包括设置于平坦层16上方、绕设于发光区域13’边缘的像素界定层9’，用于界定出多个像素区域。发光器件13设置于平坦层16上方，其一部分被像素界定层9’覆盖。
该显示面板的发光器件13’为底发光型，其发出的光的一部分依次经过平坦层16、钝化层5’和层间绝缘层3’等，从衬底基板1’的下方射出。但是，从发光器件13’所发出的光不仅会在垂直于衬底基板1’的垂直方向上传播，也会在平行于衬底基板1’的横向方向传播，例如有一部分光会在平坦层16、钝化层5’和层间绝缘层3’中横向传播。如此，在该显示面板中，从某个像素单元中的发光器件发出的光，有一部分会横向传播到相邻像素单元的发光区域，从而导致对该相邻像素单元的发光区域的发光状态形成串扰。此外，由于光同时在上述垂直方向和横向方向上的传播，也可能会有一部分光会照射到薄膜晶体管4’，从而导致薄膜晶体管4’出现光生漏电现象，影响显示功能。
本公开至少一实施例提供一种显示面板，该显示面板包括：衬底基板、多个阵列排布的像素单元和全反射结构。每个像素单元包括发光区域以及位于发光区域内的发光器件；全反射结构设置于发光器件的出光侧且至少部分围绕发光区域；全反射结构包括主体结构和覆盖主体结构的朝向发光器件的侧面的第二结构，该第二结构的折射率大于该主体结构的折射率。
示范性地，图2为本公开一实施例提供的一种显示面板的平面示意图，图3A为沿图2中的I-I’线的一种剖面示意图，图3B为沿图2中的I-I’线的另一种剖面示意图，图3C为沿图2中的I-I’线的又一种剖面示意图，图3D为沿图2中的I-I’线的又一种剖面示意图。
如图2和图3A所示，显示面板10包括衬底基板1、设置在衬底基板1上的多个像素单元和全反射结构6。每个像素单元包括发光区域101和位于发光区域101内的发光器件13。全反射结构6设置于发光器件13的出光侧， 例如，在图3所示的实施例中，发光器件13的出光面为其在图中的下表面，所以全反射结构6设置于发光器件13的下方。例如，在图2所示的实施例中，全反射结构6围绕整个发光区域101，但是在本公开的其他实施例中，全反射结构6也可以围绕发光区域101的一部分，即全反射结构6的平面图形是不封闭的。即全反射结构6至少部分围绕发光区域101。全反射结构6包括主体结构601和覆盖主体结构601的朝向发光器件13的侧面6012的第二结构602，第二结构602的折射率大于主体结构601的折射率。发光器件13发出的光同时在垂直于衬底基板1的垂直方向和平行于衬底基板1的横向方向传播，所以一部分光会传播至全反射结构6，并且光从第二结构602入射至主体结构601。全反射是指光由光密介质(光在此介质中的折射率较大的介质，下文简称折射率较大)射到光疏介质(光在此介质中折射率较小的介质，下文简称折射率较小)的界面时，全部被反射回原介质内的现象。如图4D所示，当光射到两种介质界面，只产生反射而不产生折射的现象。当光由光密介质射向光疏介质时，折射角将大于入射角。当入射角i增大到某一数值时，折射角将达到90°，这时在光疏介质中将不出现折射光线，该某一数值即临界角i c。只要入射角大于或等于临界角i c时，入射光均不再发生折射，而是全部发生反射，这就是全反射。发生全反射的必要条件是：(1)光必须由光密介质射向光疏介质；(2)入射角大于或等于临界角i c。公式为：i c＝arcsin(n 2/n 1)，其中n 1为光密介质的折射率，n 2为光疏介质的折射率，且n 1>n 2。在图2和图3A所示的结构中，由于第二结构602的折射率大于主体结构601的折射率，光从折射率较大的介质入射至折射率较小的介质，根据光全反射原理，当入射光的入射角大于全反射临界角时，这部分入射光就会发生全反射，这样能够减少或避免在横向方向(例如非垂直于衬底基板方向)传播的光射入相邻像素单元的发光区域，改善或避免因此而导致的该相邻像素单元的发光区域的发光状态受到串扰的现象，有利于获得更好的显示质量。并且，将全反射结构6围绕发光区域101设置，不会遮挡发光区域而降低发光区域101的光出射率，反而通过全反射结构6阻止光在横向方向传播还可以增加光的出射率，提高光的利用效率。
例如，如图3A所示，全反射结构6的第二结构602为覆盖衬底基板1 的平坦层，平坦层的远离衬底基板1的上表面6021和全反射结构的主体结构的远离衬底基板1的上表面6011基本齐平。这样能够在实现利用光全反射原理这样能够减少或避免在横向方向传播的光射入相邻像素单元的发光区域的同时，有利简化显示面板10的结构。同时，平坦层可以为在其上方设置发光器件13提供平坦的表面。
图4A为本公开一实施例提供的显示面板的一种全反射结构沿垂直于衬底基板方向的截面示意图，图4B为本公开一实施例提供的显示面板的另一种全反射结构沿垂直于衬底基板方向的截面示意图，图4C为本公开一实施例提供的显示面板的又一种全反射结构的主体结构沿垂直于衬底基板方向的截面示意图，图4D为光的全反射原理示意图。
例如，全反射结构6的主体结构601沿垂直于衬底基板1方向的截面形状为梯形或矩形。如图4A所示，主体结构601的所述截面形状为梯形且该梯形的上底长度小于下底长度。由于第二结构602的折射率大于主体结构601的折射率，所以，当发光器件13发出的光线射向第二结构602与主体结构601的界面处时，发生全反射的临界角为γ。当入射角大于γ时，这部分光线将全部被反射回发光区域101。当入射角为γ时，入射光线与衬底基板1的夹角为a，则与衬底基板1的夹角大于a的入射光线，其入射角大于γ，这部分光线都将会发生全反射。并且，根据全反射原理，第二结构602的折射率与主体结构601的折射率相差越大，临界角C越小，发生全反射的光线的范围也越大。图3A中所示的是主体结构601的所述截面形状为图4A所示的情形，但该截面形状不限于是该种形状。例如，主体结构601的所述截面还可以是如图4B所示的矩形，或者为如图4C所示的梯形，该梯形的上底长度大于下底长度。在图4B中，发生全反射的临界角为γ，当入射角为γ时，入射光线与衬底基板1的夹角为b。同理，则与衬底基板1的夹角大于b的入射光线都将会发生全反射。在图4C中，发生全反射的临界角为γ，当入射角为γ时，入射光线与衬底基板1的夹角为c。同理，则与衬底基板1的夹角大于c的入射光线都将会发生全反射。显然，c<b<a，所以，图4A、4B、4C所示的情况下在第二结构602与主体结构601的界面处发生全反射的光的范围依次增大，而全反射的光的范围的增大有利于更好地改善由于光在横向方向的 传播而造成的上述不良现象。
需要说明的是，主体结构601的所述截面的上述形状只是几种实施例，在本公开的其他实施例中，主体结构601的所述截面的形状不仅仅限于是上述列举的种类。
例如，全反射结构6的材料可以为透明材料，主体结构601和第二结构602可以均为透明结构，如此不会阻挡来自发光器件13的光在所述垂直方向的传播。当然，在本实施例公开一实施例中，全反射结构6的主体结构601也可以是不透明材料。例如，全反射结构6的主体结构601的材料可以为第一无机材料，例如折射率较低的氟化镁，或第一树脂材料；全反射结构6的第二结构602的材料为第二无机材料，例如折射率较高的氮化硅，或第二树脂材料。第一无机材料和第二无机材料不同，第一树脂材料与第二树脂材料不同。第一树脂材料的折射率小于第二树脂材料的折射率。例如，第一树脂材料可以是聚甲基丙烯酸甲酯(PMMA)或聚烯丙基二甘醇碳酸酯(PADC)等折射率较低的树脂，第二树脂材料可以是聚苯乙烯(PS)、聚碳酸酯(PC)或引入硫、卤素等高折光指数原子的较高折射率的环氧树脂等。需要说明的是，第一树脂材料和第二树脂材料不仅仅限于是上述列举种类，也可以是满足第一树脂材料的折射率小于第二树脂材料的折射率的其他材料。
例如，发光器件13包括设置于所述平坦层上的阳极7、设置于阳极7上的发光层8以及覆盖发光层8的阴极11。在本实施例公开一实施例中，发光器件13为底发光型，发光层8发出的光从衬底基板1的下方出射。例如，阴极11为反射层，或者相邻于阴极11设置单独的反射层，从而可以反射一部分发光层8发出的光，有利于提高光的透射率，从而提高光的利用率。例如，阴极11可以为具有较高反射率表面的金属层，该金属例如可以为铝、银等。当然，阴极11的材料不仅限于所列举的种类，本公开实施例对此不作限定。
例如，显示面板10还可以包括设置于衬底基板1上的像素驱动电路，在垂直于衬底基板1的方向上，像素驱动电路至少部分被全反射结构6覆盖。如图2和图3A所示，例如，像素驱动电路可以包括薄膜晶体管开关4、栅线20和数据线21等，薄膜晶体管开关4包括栅极、位于栅极上方的半导体层和位于半导体层上方分开设置的源极和漏极。显示面板10还包括覆盖栅极的 栅绝缘层2、覆盖半导体层的层间绝缘层3和覆盖薄膜晶体管4及衬底基板1的钝化层5，在平坦层(全反射结构的第二结构)中设置有过孔12，用于使发光器件13的阳极7的一部分通过过孔12与漏极接触，从而实现阳极7和漏极电连接。在垂直于衬底基板1的方向上，薄膜晶体管4的一部分和栅线20以及数据线21的一部分被反射结构6覆盖。如此，全反射结构6还可以改善或避免同时在所述垂直方向和横向方向传播的光照射到薄膜晶体管4，从而改善或避免薄膜晶体管4出现光生漏电现象而影响显示功能的问题。
例如，显示面板10还包括像素界定层9，包括设置于所述发光器件之间的像素分隔部分和对应于发光区域101的开口部分，以限定出多个像素单元。如图2所示，像素界定层9的像素分隔部分可以围绕发光区域101设置。例如，如图3A所示，像素分隔部分位于全反射结构6的上方，在垂直于衬底基板1的方向上，像素分隔部分与全反射结构6重叠。当然，像素分隔部分也可以与全反射结构6的一部分重叠。
图3B所示的是本公开另一实施例，其与图3A所示的实施例的区别在于，全反射结构6的第二结构602覆盖主体结构601的远离衬底基板1的上表面6011，即平坦层覆盖全反射结构6的主体结构602。这种结构也可以通过上述光全反射原理减少或避免在横向方向传播的光射入相邻像素单元的发光区域，与图3A所示的实施例达到相同或相近的技术效果。并且，与第二结构602的远离衬底基板1的上表面6021与主体结构601的远离衬底基板1的上表面6011基本齐平的结构相比，这种结构的制作方法比较简单。
上述实施例为全反射结构的第二结构同时为平坦层的情况，也可以不以平坦层作为全反射结构的第二结构。例如，如图3C所示，第二结构602覆盖主体结构601的朝向发光结构13的侧面6012。显示面板10还包括平坦层15，平坦层15设置于衬底基板1的上方，覆盖全反射结构6和衬底基板1，发光器件13设置于平坦层15上。该结构也可以实现与之前描述的实施例相同或相近的技术效果。该主体结构601和第二结构602的材料以及显示面板10的其他结构与图3A中的相同，请参考上述描述。
例如，如图3D所示，全反射结构6的第二结构602还可以覆盖主体结构601的远离衬底基板1的上表面6011，平坦层15覆盖全反射结构6和衬 底基板1，该结构也可以实现与之前描述的实施例相同或相近的技术效果。该主体结构601和第二结构602的材料以及显示面板10的其他结构与图3A中的相同，请参考上述描述。
需要说明的是，本公开一实施例是以发光器件为底发光型为例，在本公开的其他实施例中发光器件也可以是顶发光型，光从显示面板的远离衬底基板的上方出射，此时，全反射结构设置于发光器件的远离衬底基板的一侧；或者，发光器件也可以是双面发光型，此时，可以在发光器件的朝向衬底基板的一侧和远离衬底基板的一侧均设置全反射结构。
本公开至少一实施例还提供一种显示装置，包括本公开实施例提供的任意一种显示面板。该显示装置可以为有机发光二极管显示装置。例如，该显示装置可以实现为如下的产品：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
示范性地，图5是本公开一实施例提供的一种显示装置的示意图。如图5所示，显示装置100包括本公开实施例提供的任意一种显示面板10，还可以包括驱动装置17和控制器18。驱动装置17配置为能够调制施加在显示面板10的各个像素区的发光器件的电极上的电位信号，以建立驱动电场，实现显示装置100在显示期间的显示效果。驱动装置17例如可以为驱动电路等。控制器18配置为能够控制驱动装置17的工作，例如控制串行显示数据和扫描控制时序，以控制显示装置显示状态。控制器18可以通过各种形式实现，例如中央处理器(CPU)、信号处理器、可编程控制器(PLC)等。
例如，显示装置100还可以是触控显示装置，还可以包括触控基板(图未示出)、触摸检测装置(图未示出)等，此时，控制器18还可以通过控制驱动装置17来控制触控扫描信号，以及接收来自触摸检测装置的检测结果，将其转换成坐标信息，进而控制显示装置的显示状态。本领域技术人员可根据具体产品的需求来合理设计驱动装置和控制器的配置和使用方式。
需要说明的是，本公开实施例的附图只示出了显示装置的与显示面板直接相关的示意性结构，至于显示装置的其他结构，本领域技术人员可参考常规技术。
本公开实施例提供的显示装置能够改善或避免发光器件发出的在横向方 向传播的光射入相邻像素单元的发光区域，改善或避免因此而导致的该相邻像素单元的发光区域的发光状态受到串扰的问题，有利于获得更好的显示质量。
本公开至少一实施例还提供一种显示面板制作方法，该方法包括：提供衬底基板，衬底基板上设置有多个阵列排布的像素单元，每个像素单元包括发光区域；在发光区域形成发光器件；以及在发光器件的出光侧形成全反射结构，全反射结构至少部分围绕发光区域；其中，全反射结构包括主体结构和覆盖主体结构的朝向发光器件的侧面的第二结构，第二结构的折射率大于主体结构的折射率。
下面以制作底发光型显示面板为例来进行详细说明。如图6A所示，提供衬底基板1，在衬底基板1上设置有像素驱动电路。该像素驱动电路包括阵列排布的薄膜晶体管4、横纵交叉设置的栅线和数据线(图未示出)等，其在衬底基板1上限定出多个阵列排布的像素单元，每个像素单元包括发光区域。在衬底基板1上还设置有覆盖薄膜晶体管4的栅极的栅绝缘层2、覆盖半导体层的层间绝缘层3。如图6B所示，形成覆盖薄膜晶体管4及衬底基板1的钝化层5，以保护衬底基板1及设置在其上方的像素驱动电路。以上结构及步骤都可以参考本领域常规技术形成。
显示面板制作方法包括在发光器件13的出光侧形成全反射结构6，在本公开一实施例中，显示面板为底发光型，所以在发光器件13的下方形成全反射结构6。该全反射结构6包括主体结构601和覆盖主体结构601的朝向发光器件的侧面6012的第二结构602。具体地，例如，如图6C所示，在钝化层5上方形成主体结构层6’，用于形成全反射结构6的主体结构601，使全反射结构6至少部分围绕所述发光区域。例如，当主体结构层6’的材料为上述的第一树脂且第一树脂为感光树脂时，可以采用涂布(旋涂或刮涂)等方法形成主体结构层6’。当主体结构层6’的材料为上述的第一无机材料，例如为氟化镁时，可以采用蒸镀、化学气相沉积等方法形成主体结构层6’。例如，可以配合掩模采用曝光-显影形成全反射结构的主体结构。如图6C所示，可以利用掩模板14罩盖主体结构层6’，掩模板14包括曝光区和非曝光区，例如主体结构层6’为具有正性光刻胶性质的感光树脂时，用于形成主体结构的 部位对应非曝光区，其他部位对应于曝光区，调节合适的曝光强度，主体结构层6’对应曝光区的部分的曝光强度由远离衬底基板1到靠近衬底基板1的位置逐渐减小。曝光后再经显影工序，即可形成如图6D所示的主体结构601，其垂直于衬底基板1方向的截面为梯形，且梯形的上底长度小于下底长度。例如，当主体结构层6’为具有负性光刻胶性质的感光树脂时，用于形成主体结构的部位对应曝光区，其他部位对应于非曝光区，调节合适的曝光强度，主体结构层6’对应曝光区的部分的曝光强度由远离衬底基板1到靠近衬底基板1的位置逐渐减小。曝光后再经显影工序，即可形成如图4A所示的主体结构601，其垂直于衬底基板1方向的截面为梯形，且梯形的上底长度大于下底长度。例如，当曝光过程采用较大的曝光强度时，使主体结构层6’对应曝光区的部分的曝光强度由远离衬底基板1到靠近衬底基板1的位置都得到充分曝光。曝光后再经显影工序，即可形成如图4B所示的主体结构601，其垂直于衬底基板1方向的截面为矩形。本领域技术人员可根据实际要形成的主体结构601的具体形状设计相应的曝光方式，本公开实施例对此不作限制。
关于形成第二结构602，例如，形成全反射结构6包括形成覆盖衬底基板1的平坦层以作为全反射结构6的第二结构602。如图6F所示，平坦层的远离衬底基板1的上表面6021可以和主体结构601的上表面6011基本齐平；或者，如图6E所示，平坦层可以覆盖主体结构601。第二结构602的折射率大于主体结构601的折射率，第二结构602的材料可以为如上所述的第二树脂材料或氮化硅，具体的材料请参考实施例一中的描述，在此不再赘述。可以根据具体的材料种类选择合适的方法形成第二结构602，例如，如果第二结构602的材料为氮化硅，可以采用化学气相沉积法；如果第二结构602的材料为实施例一中所述的第二树脂材料，则可以采用涂布方法。
如图6G所示，在平坦层和钝化层5中形成暴露一部分漏极的过孔12，例如可以采用光刻法形成过孔12。
例如，该显示面板制作方法还包括在发光区域形成发光器件，可以采用蒸镀法形成发光器件。形成发光器件可以包括在平坦层上形成阳极；在阳极上形成发光层；以及在发光层上形成阴极。具体地，如图6H所示，在平坦层上方形成发光器件的阳极层7’，用于形成阳极。阳极层的一部分通过过孔 12与漏极接触，以实现阳极层7’与漏极电接触。如图6I所示，可以通过光刻在将阳极层7’图案化，形成位于发光区域的阳极7，在对应于全反射结构6的位置形成开口。
例如，如图6J所示，该显示面板制作方法还包括形成像素界定层9。例如，可以利用光刻法在全反射结构6的上方形成像素界定层9。像素界定层9包括设置于发光器件之间的像素分隔部分和对应于发光区域的开口部分，以界定出各个像素区域，有利于防止相邻发光区域之间产生串扰。像素界定层9的像素分隔部分可以围绕发光区域101设置。在垂直于衬底基板1的方向上，像素分隔部分与全反射结构6重叠。当然，像素分隔部分也可以与全反射结构6的一部分重叠。
如图6K所示，在发光区域形成发光层8，例如发光层8可以是有机发光材料。如图6L所示，发光层8上形成阴极11，阴极11可以覆盖发光层和像素界定层9。如此，形成如图6L所示的显示面板。
需要说明的是，本公开一实施例中，发光器件13为底发光型，所以阴极11为反射层，可以由具有较高反射率的金属材料形成，例如铝或银等，或者相邻阴极11设置单独的反射层，该反射层可以由金属材料制备；阳极7的材料为透明导电材料，以利于光的出射，例如铟锡氧化物(ITO)或铟锌氧化物(IZO)等。另外，在图6A-6L所示的实施例中，全反射结构先于发光器件形成，但在其他实施例中，全反射结构也可以在形成发光器件之后形成，本公开实施例不限定形成发光器件与形成全反射结构的先后顺序。
在利用图6A-6L所示的实施例提供的方法制得的显示面板中，由于第二结构602的折射率大于主体结构601的折射率，根据光全反射原理，当入射光的入射角大于全反射临界角时，这部分入射光就会发生全反射，这样能够减少或避免在横向方向传播的光射入相邻像素单元的发光区域，改善或避免因此而导致的该相邻像素单元的发光区域的发光状态受到串扰的现象，有利于获得更好的显示质量。
图6A-6L所示的实施例中，在垂直于衬底基板1的方向上，像素驱动电路至少部分被所述全反射结构覆盖。例如，薄膜晶体管4的一部分和栅线20以及数据线21的一部分被反射结构6覆盖。如此，全反射结构6还可以改善 或避免同时在所述垂直方向和横向方向传播的光照射到薄膜晶体管4，从而改善或避免薄膜晶体管4出现光生漏电现象而影响显示功能的问题。
上述实施例为以平坦层作为全反射结构的第二结构的情形，也可以不以平坦层作为第二结构。例如，如图7A所示，采用上述方法形成全反射结构6的主体结构601后，形成覆盖主体结构601的第二结构层602’。对第二结构层602’采用光刻工艺或者曝光-显影工艺进行图案化，形成如图7B所示的覆盖主体结构601的第二结构602；或者，形成如图7C所示的覆盖主体结构601的侧面6012的第二结构602。形成图7C中的第二结构602，例如可以采用刻蚀方法或研磨方法(例如化学机械抛光方法)去除覆盖主体结构601上表面6011部分的第二结构层602’；或者，在其他实施例中，在形成第二结构层602’时使其上表面与主体结构的上表面基本平齐。第二结构602的材料可以为第二无机材料，例如氮化硅，或者为第二树脂材料，具体请参考实施例一中所述，本领域技术人员可根据第二结构602的材料性质选择对第二结构进行图案化的具体工艺。
例如，如图7D或图7E所示的实施例提供的显示面板制作方法还包括在衬底基板1上形成平坦层15，平坦层15覆盖全反射结构6和衬底基板，以为设置发光器件13提供平坦表面。后续步骤与图6G-6L所示的步骤实施例相同，请参考之前的描述。采用这种方法形成的显示面板可以达到与图6A-6L所示的实施例所形成的显示面板相同或相似的技术效果。
以上所述仅是本公开的示范性实施方式，而非用于限制本公开的保护范围，本公开的保护范围根据权利要求书所界定的范围确定。

Claims (15)

  1. 一种显示面板，包括：
    衬底基板；
    多个阵列排布的像素单元，其中，每个所述像素单元包括发光区域以及位于所述发光区域内的发光器件；以及
    全反射结构，设置于所述发光器件的出光侧且至少部分围绕所述发光区域；
    其中，所述全反射结构包括主体结构和覆盖所述主体结构的朝向所述发光器件的侧面的第二结构，所述第二结构的折射率大于所述主体结构的折射率。
  2. 根据权利要求1所述的显示面板，其中，所述全反射结构的第二结构还覆盖所述主体结构的远离所述衬底基板的上表面。
  3. 根据权利要求1或2所述的显示面板，其中，所述全反射结构的第二结构还配置为覆盖所述衬底基板的平坦层，
    所述平坦层的远离所述衬底基板的上表面和所述全反射结构的主体结构的远离所述衬底基板的上表面基本齐平；或者所述平坦层覆盖所述全反射结构的主体结构。
  4. 根据权利要求1-3任一所述的显示面板，其中，所述全反射结构的主体结构沿垂直于所述衬底基板方向的截面形状为梯形或矩形。
  5. 根据权利要求1-4任一所述的显示面板，其中，所述全反射结构的材料为透明材料。
  6. 根据权利要求5所述的显示面板，其中，所述全反射结构的主体结构的材料为第一无机材料或第一树脂材料，所述全反射结构的第二结构的材料为第二无机材料或第二树脂材料；所述第一无机材料和所述第二无机材料不同，所述第一树脂材料与所述第二树脂材料不同。
  7. 根据权利要求1或2所述的显示面板，还包括平坦层，其中，所述平坦层设置于所述衬底基板上，覆盖所述全反射结构和所述衬底基板，所述发光器件设置于所述平坦层上。
  8. 根据权利要求7所述的显示面板，其中，所述发光器件包括：
    阳极，设置于所述平坦层上；
    发光层，设置于所述阳极上；以及
    阴极，覆盖所述发光层；
    所述发光器件为底发光型。
  9. 根据权利要求1-7任一所述的显示面板，其中，所述显示面板还包括设置于所述衬底基板上的像素驱动电路；
    在垂直于所述衬底基板的方向上，所述像素驱动电路至少部分被所述全反射结构覆盖。
  10. 根据权利要求1-9任一所述的显示面板，还包括：
    像素界定层，包括设置于所述发光器件之间的像素分隔部分和对应于所述发光区域的开口部分，以限定出多个所述像素单元。
  11. 一种显示装置，包括权利要求1-10任一所述的显示面板。
  12. 一种显示面板制作方法，包括：
    提供衬底基板，所述衬底基板上设置有多个阵列排布的像素单元，其中，每个所述像素单元包括发光区域；
    在所述发光区域形成发光器件；以及
    在所述发光器件的出光侧形成全反射结构，其中，所述全反射结构至少部分围绕所述发光区域；
    其中，所述全反射结构包括主体结构和覆盖所述主体结构的朝向所述发光器件的侧面的第二结构，所述第二结构的折射率大于所述主体结构的折射率。
  13. 根据权利要求12所述的显示面板制作方法，其中，所述形成全反射结构包括形成覆盖所述衬底基板的平坦层以作为所述全反射结构的第二结构；所述平坦层的远离所述衬底基板的上表面和所述全反射结构的主体结构的远离所述衬底基板的上表面基本齐平；或者所述平坦层覆盖所述主体结构。
  14. 根据权利要求12或13所述的显示面板制作方法，还包括在所述衬底基板上形成平坦层，所述平坦层覆盖所述全反射结构和所述衬底基板。
  15. 根据权利要求12-14任一所述的显示面板制作方法，其中，所述显示面板还包括设置在衬底基板上的像素驱动电路；
    在垂直于所述衬底基板的方向上，所述像素驱动电路至少部分被所述全反射结构覆盖。
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US11329258B2 (en) 2022-05-10
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