WO2006035811A1 - 有機エレクトロルミネッセンス表示装置 - Google Patents
有機エレクトロルミネッセンス表示装置 Download PDFInfo
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- WO2006035811A1 WO2006035811A1 PCT/JP2005/017840 JP2005017840W WO2006035811A1 WO 2006035811 A1 WO2006035811 A1 WO 2006035811A1 JP 2005017840 W JP2005017840 W JP 2005017840W WO 2006035811 A1 WO2006035811 A1 WO 2006035811A1
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- 238000005401 electroluminescence Methods 0.000 title claims 5
- 239000011368 organic material Substances 0.000 claims abstract description 21
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1866—Transmission gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
- G02B5/1871—Transmissive phase gratings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/878—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/877—Arrangements for extracting light from the devices comprising scattering means
Definitions
- the present invention relates to an organic electoluminescence (organic EL) display device.
- an organic EL display device is a self-luminous display device, the organic EL display device has a feature that a viewing angle is wide and a response speed is fast. In addition, since a knocklight is not required, it is possible to reduce the thickness and weight. For these reasons, in recent years, attention has been paid to the use of organic EL display devices as display devices for mobile phones, for example, instead of liquid crystal display devices.
- An organic EL element which is a main part of an organic EL display device, includes a light-transmitting front electrode, a light-reflective or light-transmitting back electrode opposite to the front electrode, and a light-emitting layer interposed therebetween.
- a charge injection type self-luminous element that emits light when electricity is passed through the organic layer.
- the light emitted from the light-emitting layer must be emitted from the front electrode. Of the light that travels to the front side in the element, the light that travels to the wide-angle side is the front surface. It is totally reflected at the interface between the electrode and its lower layer. For this reason, most of the light emitted from the organic layer cannot be extracted outside the organic EL element, that is, the light extraction efficiency of the organic EL element is low.
- Patent Document 1 since the pattern constituting the diffraction element or the zone plate has directionality, the directivity of the extracted light varies depending on the direction, and image display is inappropriate as an organic EL display device. There are cases. In addition, the fine shape of the diffractive element or the zone plate must be formed by lithography or the like, resulting in a problem that the cost is increased.
- An object of the present invention is to provide an organic EL display device with improved light extraction efficiency.
- a light-transmissive insulating layer According to a first aspect of the present invention, a light-transmissive insulating layer
- a back electrode disposed on the back side with respect to the light transmissive insulating layer, a light transmissive front electrode interposed between the light transmissive insulating layer and the back electrode, and the front electrode;
- An organic EL device having an organic layer interposed between the back electrode and including a light emitting layer;
- a two-layer three-dimensional diffractive element disposed on the optical path from the light emitted from the light emitting layer to the light transmissive insulating layer after exiting the organic layer
- ⁇ ⁇ q is the q-order amplitude
- K 2 ⁇ ⁇ ( ⁇ is the period)
- ⁇ is the horizontal position
- a light transmissive insulating layer According to a second aspect of the present invention, a light transmissive insulating layer
- a back electrode disposed on the back side with respect to the light transmissive insulating layer, a light transmissive front electrode interposed between the light transmissive insulating layer and the back electrode, and the front electrode;
- An organic EL device having an organic layer including a light emitting layer and being interposed between the back electrode and
- the organic electoluminescence element is bent in a wave shape with a desired period.
- An EL display device is provided.
- a light-transmissive insulating layer a light-transmissive insulating layer
- a back electrode disposed on the back side with respect to the light transmissive insulating layer, a light transmissive front electrode interposed between the light transmissive insulating layer and the back electrode, and the front electrode;
- An organic EL device comprising an organic material layer including a light emitting layer interposed between the back electrode;
- a fine particle dispersion layer disposed on an optical path from the light emitted from the light emitting layer to the light transmissive insulating layer after exiting the organic material layer
- the fine particle dispersion layer provides an organic EL display device in which a large number of fine particles having a refractive index different from that of the base material are dispersed in the base material.
- a light-transmitting back electrode, a light-transmitting front electrode facing the back electrode, and the back electrode and the front electrode are interposed between the back electrode and the light-emitting electrode.
- An organic EL device having an organic layer including a light layer;
- a reflective layer facing the back electrode A reflective layer facing the back electrode
- the surface of the reflective layer facing the organic EL element includes a plurality of convex portions or concave portions arranged at a substantially constant pitch and each having a forward tapered cross-sectional shape, and the height of the convex portion or the concave portion
- the depth of the reflective layer is 0.5 ⁇ m or more, the pitch is 3 ⁇ m or more, and when the cross section of the reflective layer is viewed, the surface of the reflective layer facing the organic EL element is substantially positive.
- the light-transmitting back electrode, the light-transmitting front electrode facing the back electrode, and the back electrode and the front electrode are interposed between and An organic EL device having an organic layer including a light layer;
- a reflective layer facing the back electrode A reflective layer facing the back electrode
- An organic EL display device including a plurality of convex portions or concave portions each having a forward tapered cross-sectional shape on a surface of the reflective layer facing the organic EL element is provided.
- FIG. 1 is a cross-sectional view schematically showing an organic EL display device according to a first embodiment of the present invention.
- FIG. 2 is a plan view showing the three-dimensional diffraction element of FIG.
- FIG. 3 is a cross-sectional view taken along line III-III in FIG.
- FIG. 4 is a cross-sectional view schematically showing an organic EL display device according to a second embodiment of the present invention.
- FIG. 5 is a cross-sectional view of a principal part of the organic EL display device of FIG.
- FIG. 6 is a cross-sectional view schematically showing an organic EL display device according to a third embodiment of the present invention.
- FIG. 7 is a graph showing the relationship between the particle diameter of fine particles dispersed in the fine particle dispersion layer of the organic EL display device of FIG. 6 and the light extraction efficiency.
- FIG. 8 is a cross-sectional view schematically showing an organic EL display device according to a fourth embodiment of the present invention.
- FIG. 9 is an enlarged cross-sectional view showing a part of the organic EL display device of FIG.
- FIG. 10 is a cross-sectional view schematically showing an example of a method that can be used for manufacturing the organic EL display device shown in FIG.
- FIG. 11 is a cross-sectional view schematically showing an example of a method that can be used for manufacturing the organic EL display device shown in FIG.
- FIG. 12 is a cross-sectional view schematically showing an example of a method that can be used for manufacturing the organic EL display device shown in FIG.
- FIG. 13 is a cross-sectional view schematically showing an example of a method that can be used for manufacturing the organic EL display device shown in FIG.
- FIG. 1 is a cross-sectional view showing a bottom emission type organic EL display device adopting the active matrix drive method according to the first embodiment
- FIG. 2 is a plan view showing a three-dimensional diffraction element of the organic EL display device.
- 3 is a cross-sectional view taken along line III-III in FIG. In FIG. 1, the organic EL display device is drawn such that its display surface, that is, the front surface faces downward and the back surface faces upward.
- a plurality of pixels are arranged in a matrix on a transparent substrate 1 such as a glass substrate that is a light-transmissive insulating layer.
- Each pixel has, for example, an element control circuit, an output switch, an organic EL element and a pixel switch, which will be described later, connected in series between a pair of power supply terminals.
- the element control circuit has a control terminal connected to a video signal line via a pixel switch, and has a size corresponding to a video signal supplied from the video signal line drive circuit via the video signal line and the pixel switch. This current is output to the organic EL device via the output switch.
- the pixel switch has a control terminal connected to the scanning signal line, and ONZOFF is controlled by a scanning signal supplied from the scanning signal line driving circuit via the scanning signal line. Further, the control terminal of the output switch is connected to the scanning signal line, and ON ZOFF is controlled by the scanning signal supplied from the scanning signal line driving circuit via the scanning signal line. Note that other structures may be employed for these pixels.
- an undercoat layer 2 in which a SiN layer and a SiO layer are sequentially laminated is formed on the substrate 1.
- TEOS tetraethyl orthosilicate
- a gate electrode 5 made of MoW or the like is formed in this order to constitute a top gate type thin film transistor (TFT).
- TFTs are used for pixel switches, output switches, and element control circuits.
- a scanning signal line (not shown) that can be formed in the same process as the gate electrode 5 is further formed on the gate insulating film 4.
- an interlayer insulating film 6 having a force such as SiO formed by a plasma CVD method or the like is formed on the gate insulating film 4 including the gate electrode 5.
- the source / drain electrodes 7 and 8 are formed on the interlayer insulating film 6 and contact holes provided in the interlayer insulating film 6 are formed.
- the TFT is connected to the source region and drain region of the TFT.
- the source / drain electrodes 7 and 8 have, for example, a three-layer structure of MoZAlZMo.
- a video signal line (not shown) that can be formed in the same process as the source / drain electrodes 7 and 8 is formed on the interlayer insulating film 6.
- a passivation film 9 having a force such as SiN is formed on the interlayer insulating film 6 including the source / drain electrodes 7 and 8.
- a three-dimensional diffractive element 10 as light extraction means is provided on the passivation film 9.
- This three-dimensional diffractive element 10 has a first layer 11 made of a transparent inorganic material such as SiN as shown in FIGS. 1, 2 and 3, and is laminated on the first layer 11 and is different from this material. It has a two-layer structure of the second layer 12 made of organic insulating materials such as resist and polyimide, and has a cross-sectional structure (for example, a lattice shape) of dielectric constant modulation represented by the Fourier series of the following formula (1) .
- ⁇ ⁇ ( ⁇ ) in the equation is the change in dielectric constant at position ⁇
- ⁇ ⁇ q is the q-order amplitude
- K 2 ⁇ ⁇ ( ⁇ is the period)
- ⁇ is the horizontal position (arrow direction in Fig. 2)
- the three-dimensional diffractive element 10 operates sufficiently against confined light and does not act on extracted light.
- the efficiency with respect to the extracted light is the wavelength
- the refractive index of the first layer 11 is nl
- the refractive index of the second layer 12 is nl.
- nl 2.
- n2 l. 5
- ⁇ 500
- Assuming nm, h 125 nm.
- the leakage of confined light is often less than lOOnm, so h should be 125nm.
- a through hole communicating with the drain electrode 8 is opened in the passivation film 9 and the three-dimensional diffraction element 10.
- the plurality of light transmissive front electrodes 13 are juxtaposed on the three-dimensional diffraction element 10 so as to be separated from each other.
- the front electrode 13 is an anode and is made of a transparent conductive oxide such as ITO (Indium Tin Oxide).
- ITO Indium Tin Oxide
- the partition insulating layer 14 is provided on the three-dimensional diffraction element 10 including the front electrode 13.
- the partition insulating layer 14 is provided with through holes 15 corresponding to the front electrodes 13.
- the partition insulating layer 14 is an organic insulating layer, for example, and can be formed using a photolithography technique.
- the organic material layer 16 including the light emitting layer 16 a is provided on the front electrode 13 exposed in the through hole 15 of the partition insulating layer 14.
- the light emitting layer 16a is a thin film containing a luminescent organic compound whose emission color is red, green or blue, for example.
- the organic material layer 16 can further include layers other than the light emitting layer 16a.
- the organic material layer 16 may further include a buffer layer 16b that serves to mediate the injection of holes from the front electrode 13 into the light emitting layer 16a.
- the organic material layer 16 may further include a hole transport layer, a hole blocking layer, an electron transport layer, an electron injection layer, and the like.
- the light-reflecting back electrode 17 is provided on the partition insulating layer 14 and the organic material layer 16.
- the back electrode 17 is a cathode provided continuously in common with each pixel.
- the back electrode 17 is electrically connected to an electrode wiring formed on the same layer as the video signal line X through a contact hole (not shown) provided in the noisy film 9, the three-dimensional diffraction element 10 and the partition insulating layer 14. It is connected.
- These front electrode 13, organic substance layer 16 and back electrode 17 constitute an organic EL element 18, respectively.
- the self-luminous display device in which pixels including at least a pixel switch arranged corresponding to the self-luminous element and the self-luminous element are arranged in a matrix, the self-luminous display device is arranged on the display surface side or the back surface side of the display device. Providing light extraction means.
- the organic EL shown in Fig. 1 The display device usually further includes a sealing substrate (not shown) facing the back electrode 17 and a seal layer (not shown) provided along the periphery of the facing surface of the back electrode 17; Thereby, a sealed space is formed between the back electrode 17 and the sealing substrate. This space is filled with a noble gas such as Ar gas or an inert gas such as N gas.
- a noble gas such as Ar gas or an inert gas such as N gas.
- the EL display device further includes a light scattering layer 19 as a diffusing means on the outside of the transparent substrate 1, that is, on the front side.
- the above equation (1) is applied to the optical path from the time when the light emitted from the light emitting layer 16a is emitted from the organic material layer 16 to the light transmitting insulating layer (for example, the transparent substrate 1).
- An organic EL display device with high luminous efficiency can be realized by arranging the three-dimensional diffractive element 10 having a specific dielectric constant modulation sectional structure represented by
- the organic EL element 18 itself has high power, even if light can be extracted with high efficiency, light can be emitted with high efficiency from the light-transmitting insulating layer (transparent substrate 1) placed on the front side of the organic EL element 18 As long as it cannot be extracted, the luminous efficiency of the organic EL display device cannot be sufficiently increased.
- the light incident on the light-transmitting insulating layer is caused by the interface between the light-transmitting insulating layer and the external environment (typically air). Therefore, it is necessary to sufficiently suppress the total reflection. That is, light incident on the second waveguide layer (here, the light-transmissive insulating layer) from the first waveguide layer (here, the organic material layer 16 and the front electrode 13) propagating light is transmitted through the second waveguide layer. It is important to suppress total reflection at the light exit surface interface.
- the light transmitting The light incident on the conductive insulating layer must be within the critical angle between the light-transmitting insulating layer and the outside world, and the directivity must be extremely high. Specifically, the directivity of light must be increased to the extent that the use of a light scattering layer is necessary to achieve a sufficient viewing angle.
- the specific dielectric constant modulation expressed by the above formula (1) between the interface of the first waveguide layer and the second waveguide layer, that is, between the front electrode 13 and the passivation film 9 By arranging a three-dimensional diffractive element 10 having a cross-sectional structure of The light is diffracted by the three-dimensional diffractive element 10 and, as a result, light having a high preference can be incident on the light-transmissive insulating layer, and the light extraction efficiency can be improved. Therefore, an organic EL display device with high luminous efficiency can be realized.
- the wavelength of light emitted from the light emitting layer 16a in the three-dimensional diffraction element 10 is obtained
- the refractive index of the first layer 11 is nl
- the refractive index of the second layer 12 is nl
- a three-dimensional diffractive element consists of a first layer made of SiN (refractive index 2.0) and a second layer made of resin (refractive index 1.5), and has a periodic structure depth of hlOOnm. Therefore, by setting the period ( ⁇ ) to 350 nm and making the cross-sectional shape rectangular so that the primary light becomes stronger, an organic EL display device with even higher luminous efficiency could be obtained.
- the directivity of the light emitted from the transparent substrate 1 is remarkably increased as described above.
- the directivity of light can be freely changed by the light scattering layer 19 according to the use of the organic EL display device.
- the organic EL display device when an organic EL display device is used in a portable device such as a mobile phone, the organic EL display device is not required to have a wide viewing angle, and is required to have a bright display or low power consumption. Therefore, for such applications, a light scattering layer 19 having a low light scattering ability may be used.
- the organic EL display device when an organic EL display device is used as a fixed device display device, the organic EL display device requires a wide viewing angle. Therefore, for such applications, a light scattering layer 19 having a high light scattering ability may be used.
- the extracted light can be used more effectively. It is possible to improve the luminous efficiency.
- the light scattering layer 19 is used as the diffusing means, other structures may be adopted for the diffusing means.
- the surface of the transparent substrate may be roughened and used as a light scattering surface.
- the diffusing means may not use light scattering.
- a diffusing means a lens array in which a plurality of diffusing lenses are arranged may be used instead of the light scattering layer.
- FIG. 4 is a cross-sectional view showing a bottom emission type organic EL display device adopting the active matrix drive system according to the second embodiment
- FIG. 5 is a cross-sectional view of the main part of FIG.
- the organic EL display device is drawn with its display surface, that is, the front surface facing downward and the back surface facing upward. Further, in FIG. 4, the same members as those in FIG.
- a planarizing layer 20 made of, for example, a resin material is formed on a passivation film 9, and, for example, a resin material card is formed on the flat film layer 20.
- the corrugated layer 21 is formed.
- the corrugated layer 21 includes a front electrode 13, an organic layer 16 including a light emitting layer, and a back electrode 17.
- the corrugated layer 21 is transferred to the surface of the corrugated layer 21 with a desired period.
- a bent organic EL element 18 is formed.
- the organic EL element 18 having a wave shape preferably has a period L (wave mountain or valley) of 5 to 8 ⁇ m and a height difference ⁇ H between peaks and valleys of 1 to 2 ⁇ m. .
- the corrugated layer 21 can be formed, for example, by forming irregularities on the photosensitive resin layer by photolithography and then heat-treating to reflow the surface.
- an organic EL display device with high luminous efficiency can be obtained by forming the organic EL element 18 including the front electrode 13, the organic layer 16 including the light emitting layer, and the back electrode 17 into a wave shape. realizable.
- the organic EL element 18 itself has high power, even if light can be extracted with high efficiency, light can be emitted with high efficiency from the light-transmitting insulating layer (transparent substrate 1) placed on the front side of the organic EL element 18 As long as it cannot be extracted, the luminous efficiency of the organic EL display device cannot be sufficiently increased.
- light incident on the light transmissive insulating layer is an interface between the light transmissive insulating layer and the outside world (typically air). Therefore, it is necessary to sufficiently suppress the total reflection. That is, light incident on the second waveguide layer (here, the light-transmissive insulating layer; transparent substrate 1) from the first waveguide layer (here, the organic material layer 16 and the front electrode 13) that propagates light is It is important to suppress total reflection at the light exit surface interface of the two waveguide layers.
- the directivity of light must be increased to the extent that the use of a light scattering layer is necessary to achieve a sufficient viewing angle.
- the organic EL element 18 itself including the first waveguide layer corrugated, the light emitted from the light emitting layer of the organic layer 16 is transmitted to the interface of the second waveguide layer.
- the light transmissive insulating layer below the corrugated layer 21 that is, the light transmissive insulating layer.
- This makes it possible to make light incident with high preference and improve the light extraction efficiency. Therefore, an organic EL display device with high luminous efficiency can be realized.
- FIG. 6 is a cross-sectional view showing a bottom emission organic EL display device that employs an active matrix drive system according to the second embodiment.
- the organic EL display device is drawn such that its display surface, that is, the front surface faces downward and the back surface faces upward.
- the same members as those in FIG. 6 are identical to those in FIG.
- a fine particle dispersion layer 30 as light extraction means is provided on the passivation film 9.
- the fine particle dispersed layer 30 has a structure in which a large number of fine particles 22 having an average particle diameter of 100 to 350 nm are dispersed in a base material layer (for example, a resin material layer) 31.
- the fine particles may be either primary particles or secondary particles formed by aggregation of the primary particles.
- the dispersion state of the fine particles need not be aligned but may be random.
- Such a fine particle dispersion layer can be formed by preparing a solution in which fine particles are dispersed in a resin material, applying the solution by a method such as spin coating, and curing by exposure or heating.
- the passivation film 9 and the fine particle dispersion layer 30 communicate with the drain electrode 8.
- a through hole is opened.
- the plurality of light-transmitting front electrodes 13 are juxtaposed on the fine particle dispersion layer 30 so as to be separated from each other.
- the front electrode 13 is an anode, and is made of a transparent conductive oxide such as ITO (Indium Tin Oxide).
- the front electrode 13 is electrically connected to the drain electrode 8 through the through hole.
- a partition insulating layer 14 is further disposed on the fine particle dispersion layer 30.
- the average particle size of the fine particles is less than lOOnm, it is difficult to efficiently extract light from an organic EL element described later. On the other hand, if the average particle size of the fine particles exceeds 350 nm, the coating properties for film formation may be hindered and the flatness of the fine particle dispersed layer may be impaired.
- n2> nl is satisfied, where nl is the refractive index of the organic resin material and n2 is the refractive index of the fine particles. These refractive index differences are preferably in the range of 0.5 to 1.2.
- the resin material it is preferable that the resin material is transparent.
- a photosensitive resin such as a trade name of PCSR: PC403, polyimide, or the like can be used. These resin materials have a refractive index of approximately 1.5 to 1.6.
- the refractive index is 2.0 or more, for example, Zn 0 (refractive index 2.0), ZrO (refractive index 2.0) or TiO (refractive index 2 7) etc. are preferred.
- the fine particle dispersed layer 30 is thicker than the dispersed fine particles by 500 ⁇ ! It preferably has a thickness of ⁇ 1 ⁇ m.
- the fine particle dispersed layer 30 is preferably such that the fine particles are dispersed at a deposition density of 10 to 50%!
- the base material layer is disposed on the optical path from the time when the light emitted from the light emitting layer 16a is emitted from the organic material layer 16 to the light transmissive insulating layer (for example, the transparent substrate 1).
- the fine particle dispersion layer 30 in which a large number of fine particles 32 having an average particle diameter of 100 to 350 nm are dispersed in the resin material layer 31, an organic EL display device with high luminous efficiency can be realized.
- the light totally reflected at the interface between the front electrode 13 and the passivation film 9 is confined and difficult to take out to the outside.
- a fine particle dispersion layer 30 in which a large number of fine particles 22 having an average particle diameter of 100 to 350 nm are dispersed in the resin material layer 21 between the front electrode 13 and the passivation film 9 as in the third embodiment, total reflection is achieved.
- the light trapped in the fine particles Light scattering efficiency can be improved by scattering with the dispersion layer 30. Therefore, an organic EL display device with high luminous efficiency can be realized.
- the refractive index of the organic resin material in the fine particle dispersion layer 30 is nl and the refractive index of the fine particles is n2, the relationship of n2> nl is satisfied, and the refractive index difference is 0.5 or more. As a result, an organic EL display device with higher luminous efficiency can be obtained.
- acrylic photosensitive resin (refractive index 1.54) is different in average particle size (50-450nm)
- TiO fine particles (refractive index 2.7) dispersed at a volume density of 20%, 500 nm thick fine particles
- the scattering layer was incorporated in the form shown in FIG. 6, and the light extraction efficiency of the light (wavelength 500 nm) emitted from the light emitting layer 16a of the organic material layer 16 was measured. The results are shown in Fig. 7.
- the extraction efficiency is the TiO fine particles dispersed in the fine particle dispersion layer.
- the average particle size of 2 becomes higher when lOOnm is larger than that of lOOnm, and the average particle size of the fine particles becomes maximum in the range of 200 to 350 nm.
- the average particle size of the fine particles exceeds 350 nm, it becomes difficult to form a flat fine particle dispersed layer.
- the average particle size of the fine particles was 5 Onm, the improvement in light extraction efficiency was hardly recognized.
- FIG. 8 is a cross-sectional view showing a top emission type organic EL display device adopting an active matrix type driving system according to the fourth embodiment.
- the organic EL display device is drawn such that its display surface, that is, the front surface faces upward and the back surface faces downward.
- a plurality of pixels are arranged in a matrix on an insulating transparent substrate 41 such as a glass substrate.
- Each pixel has, for example, an element control circuit, an output switch, an organic EL element and a pixel switch, which will be described later, connected in series between a pair of power supply terminals.
- the element control circuit has a control terminal connected to a video signal line via a pixel switch, and has a size corresponding to a video signal supplied from the video signal line driving circuit via the video signal line and the pixel switch. Is output to the organic EL device via the output switch.
- the pixel switch has a control terminal connected to the scanning signal line, and ONZOFF is controlled by a scanning signal supplied from the scanning signal line driving circuit through the scanning signal line.
- the output switch has its control terminal connected to the scanning signal line, and ONZOFF is controlled by the scanning signal supplied from the scanning signal line driving circuit via the scanning signal line. . Note that other structures may be employed for these pixels.
- an undercoat layer 42 in which a SiN x layer and a SiO x layer are sequentially laminated is formed on the substrate 41.
- a gate electrode 45 having a force such as Mo W is formed in this order to constitute a top gate type thin film transistor (TFT).
- TFTs are used for pixel switches, output switches, and element control circuits.
- a scanning signal line (not shown) that can be formed in the same process as the gate electrode 45 is further formed on the gate insulating film 44.
- an interlayer insulating film 46 made of SiO or the like formed by a plasma CVD method or the like is formed on the gate insulating film 44 including the gate electrode 45.
- the source / drain electrodes 47 and 48 are formed on the interlayer insulating film 46 and are connected to the source region and the drain region of the TFT through contact holes provided in the interlayer insulating film 46, respectively.
- the source / drain electrodes 47 and 48 have, for example, a three-layer structure of MoZAlZMo.
- a video signal line (not shown) that can be formed in the same process as the source / drain electrodes 47 and 48 is formed on the interlayer insulating film 46.
- a passivation film 49 made of SiN or the like is formed on the interlayer insulating film 46 including the source / drain electrodes 47 and 48.
- the insulating base layer 50 is formed on the passivation film 49.
- a material for the underlayer 50 for example, a resin can be used.
- the surface of the base layer 50 facing an organic EL element described later includes a plurality of convex portions each having a forward tapered cross-sectional shape.
- the “convex portion having a forward tapered cross-sectional shape” means a convex portion whose width decreases from the bottom to the top when one cross section perpendicular to the film surface is viewed.
- the cross-sections of these convex portions each have a curved line, and a substantially sine wave shape is generated on the upper surface of the underlayer 50.
- the convex portions of the underlayer 50 are typically provided so as to form a periodic structure when the underlayer 50 is observed from a direction perpendicular to the film surface.
- these convex portions are provided so as to form a two-dimensional array structure such as a triangular lattice or a square lattice when the base layer 50 is observed from a direction perpendicular to the film surface.
- a reflective layer 51 is disposed on the base layer 50.
- the upper surface of the reflective layer 51 has a shape along the upper surface of the base layer 50. That is, the upper surface of the reflective layer 51 includes a plurality of convex portions each having a forward tapered cross-sectional shape. In FIG.
- each of these convex portions has a curved surface, and a substantially sine wave shape is generated on the upper surface of the reflective layer 51.
- the material of the reflective layer 51 for example, aluminum, aluminum alloys such as aluminum neodymium, silver, and silver alloys can be used.
- a planarizing layer 52 is formed on the base layer 50 and the reflective layer 51.
- the planarization layer 52 provides a flat base for the organic EL element 18.
- a transparent resin such as silicone resin or acrylic resin can be used.
- each front electrode 53 is arranged to face the reflective layer 51.
- Each front electrode 53 is connected to the drain electrode 48 through through holes provided in the passivation film 49, the underlayer 50, and the flat layer 52.
- the front electrode 53 is an anode in this example.
- a transparent conductive oxide such as ITO (Indium Tin Oxide) can be used.
- a partition insulating layer 54 is further disposed on the flat layer 52.
- the partition insulating layer 54 is provided with a through hole 55 at a position corresponding to the front electrode 53.
- the partition insulating layer 53 is an organic insulating layer, for example, and can be formed using a photolithography technique.
- an organic material layer 56 including a light emitting layer is disposed on the front electrode 53 exposed in the through hole 55 of the partition insulating layer 54.
- the light emitting layer is a thin film containing a luminescent organic compound whose emission color is red, green, or blue, for example.
- the organic layer 56 can further include layers other than the light emitting layer.
- the organic layer 56 may further include a buffer layer that serves to mediate hole injection from the front electrode 53 to the light emitting layer.
- the organic layer 56 can further include a hole transport layer, a blocking layer, an electron transport layer, an electron injection layer, and the like.
- the partition insulating layer 54 and the organic layer 46 are covered with a light-transmissive back electrode 57.
- the back electrode 57 is a cathode provided continuously in common with each pixel.
- the back electrode 57 is provided on the noisy film 46, the underlayer 50, the planarization layer 52, and the partition insulating layer 54. It is electrically connected to the electrode wiring formed on the same layer as the video signal line through a contact hole (not shown).
- the front electrode 53, the organic material layer 56, and the back electrode 57 constitute an organic EL element 58, respectively.
- this organic EL display device can sealing or sealing film sealing is usually performed to prevent the organic EL element 58 from deteriorating due to contact with moisture, oxygen or the like.
- a polarizing plate is usually disposed on the front side of the organic EL element 58.
- total reflection light a part of the light emitted from the light emitting layer is totally reflected at any interface on the front side of the organic EL display device. A part of this light is transmitted through the interface between the front electrode 53 and the flat layer 52 if the refractive index of each component is appropriately set.
- this light is referred to as total reflection light.
- the refraction angle when the light emitted from the light emitting layer enters the flattening layer 52 from the front electrode 53 is The incident angles when this light is reflected by the reflecting layer 51 and enters the front electrode 53 from the planarizing layer 52 are equal to each other. Therefore, the total reflected light is confined inside the organic EL display device.
- the upper surface of the reflective layer 51 includes a plurality of convex portions each having a forward tapered cross-sectional shape. Therefore, the refraction angle when the light emitted from the light emitting layer is incident on the planarization layer 52 from the front electrode 53, and the light when the light is reflected by the reflection layer 51 and incident on the front electrode 53 from the planarization layer 52.
- the incident angle can be made different. Therefore, at least part of the total reflected light can be taken out of the organic EL display device. That is, high light extraction efficiency can be realized.
- the organic EL display device when the light traveling direction is changed by inclining the reflecting surface of the reflecting layer 51 with respect to the lower surface of the front electrode 53 in this manner, unlike the case where diffraction is used, the organic EL display device is projected.
- the directivity of the light is not excessively high.
- the reflective surface of the reflective layer 51 includes a curved surface, so that the reflective layer 51 functions as a light scattering layer. That is, this organic EL display device has excellent viewing angle characteristics.
- FIG. 9 is an enlarged cross-sectional view showing a part of the organic EL display device of FIG.
- the upper surface of the reflective layer 51 has a sinusoidal shape.
- the product of the amplitude of the previous sine wave (H2—HI) Z2, that is, the height of the projection H2—HI, and the refractive index n of the flattening layer 52 is 1Z4 of the wavelength of light.
- the diffraction effect is maximized. For example, when the refractive index n is 1.5 and the wavelength is 0.53 / z m, the diffraction effect becomes maximum when the height H2—HI is about 0.09 m.
- This diffraction effect can hardly be obtained if the height H2—HI is not less than 5 times the value giving the maximum diffraction effect.
- the height H2-H1 when the height H2-H1 is about 0.5 m or more, almost no diffraction effect is obtained. Therefore, in order to increase the light extraction efficiency using the diffraction effect, the height H2-H1 must be sufficiently smaller than about 0.5 m.
- the effect of changing the traveling direction of light by diffraction is given as sin- 1 (ZL) when the pitch of the convex portions, that is, the wavelength of the sine wave, L and the wavelength are used.
- ZL sin- 1
- the pitch of the convex portions that is, the wavelength of the sine wave, L and the wavelength are used.
- the diffraction angle is only about 10 °.
- the inclination angle of the reflection surface that is, the ratio between the height H2—HI and the pitch L should be set as appropriate.
- the height H2—HI and pitch L are not particularly limited. That is, the height H2-HI and the pitch L can be increased to such an extent that the reflective layer 51 can be formed at a low cost.
- the amplitude height H2 – HI can be 0.5 ⁇ m or more, and the pitch L can be 3 ⁇ m or more.
- a 50 nm thick A or A1 alloy layer is formed as the reflective layer 51
- an ITO layer is formed as the front electrode 53
- a laminate of an MgAg layer and an ITO layer is formed as the back electrode 57.
- the pitch L is 6 / ⁇ ⁇
- the minimum value HI and the maximum value ⁇ 2 of the distance in the thickness direction between the front electrode 53 and the reflective layer 51 are 1.5 m and 3.
- O / zm (height H2— H1 1.5 / zm)
- about 50% of the light confined when the reflective layer 51 is flat can be extracted to the front side of the organic EL element 58.
- the ratio of amplitude (H2 ⁇ H1) Z2 to pitch L (H2 ⁇ H1) Z2L is, for example, about 0.1 to 0.5. In this case, the effect of increasing the light extraction efficiency is great.
- the ratio between the minimum value HI and the maximum value H2 of the distance in the thickness direction between the front electrode 53 and the reflective layer 51 H1ZH2 is, for example, less than 0.5.
- the ratio H1ZH2 is large, the planarization layer 52 may be difficult to serve to provide a flat base for the organic EL element 58.
- the amplitude (H2—HI) Z2 and the pitch L can be increased. Therefore, the following method can be used to manufacture this organic EL display device.
- FIGS. 10 to 13 are cross-sectional views schematically showing an example of a method that can be used for forming the base layer 50 and the reflective layer 51 during the manufacturing process of the organic EL display device of FIG.
- a photosensitive resin layer 61 is formed on the passivation film 49.
- the photosensitive resin layer 61 is irradiated with, for example, energy rays such as ultraviolet rays through a photomask 70 in which a light shielding body pattern 72 is formed on a light transmitting substrate 71.
- the photosensitive resin layer 61 is developed. As a result, as shown in FIG. 11, a resin pattern 62 composed of a plurality of resin parts is obtained.
- a reflective layer 51 is formed on the base layer 50 as shown in FIG. 13 by, eg, sputtering.
- the resin pattern 62 in FIG. 11 is not used as an etching mask. Instead, by reflowing the resin pattern 62 in FIG. 11, the base layer 50 having a convex portion on the surface is formed as shown in FIG. 12, and the reflective layer 51 is formed thereon.
- the amplitude (H2 ⁇ HI) Z2 and the pitch L can be increased as described above, the change in the structure in FIG. 12 from the structure in FIG. 11 due to reflow can be controlled easily and with high accuracy. Therefore, according to this method, it is possible to easily form the reflective layer 51 having a convex portion on the surface.
- the force that has generated a plurality of convex portions each having a forward tapered cross-sectional shape on the surface of the reflective layer 51 instead, each of the surfaces of the reflective layer 51 has a forward tapered cross-sectional shape.
- a plurality of recesses having the following may be generated.
- “Has a forward tapered cross-sectional shape” means a recessed portion whose width decreases toward the lower side when the upper surface is viewed in a cross section perpendicular to the film surface.
- Such a reflective layer 51 is, for example, a process described with reference to FIG. 10 so as to obtain a lattice-like resin pattern 62 instead of the resin pattern 62 including a plurality of resin parts shown in FIG. Can be obtained.
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Abstract
Description
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JP2004288414A JP2006107745A (ja) | 2004-09-30 | 2004-09-30 | 有機el表示装置 |
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JP2004-288413 | 2004-09-30 | ||
JP2004-288414 | 2004-09-30 | ||
JP2004-288412 | 2004-09-30 | ||
JP2004288412A JP2006107743A (ja) | 2004-09-30 | 2004-09-30 | 有機エレクトロルミネッセンス表示装置 |
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Also Published As
Publication number | Publication date |
---|---|
US20070290607A1 (en) | 2007-12-20 |
KR20070049211A (ko) | 2007-05-10 |
TWI278250B (en) | 2007-04-01 |
TW200621079A (en) | 2006-06-16 |
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