WO2018003551A1 - Dispositif laser à semiconducteur, module laser à semiconducteur et système de source de lumière laser pour soudage - Google Patents

Dispositif laser à semiconducteur, module laser à semiconducteur et système de source de lumière laser pour soudage Download PDF

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WO2018003551A1
WO2018003551A1 PCT/JP2017/022317 JP2017022317W WO2018003551A1 WO 2018003551 A1 WO2018003551 A1 WO 2018003551A1 JP 2017022317 W JP2017022317 W JP 2017022317W WO 2018003551 A1 WO2018003551 A1 WO 2018003551A1
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layer
semiconductor laser
semiconductor
laser device
semiconductor layer
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PCT/JP2017/022317
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Japanese (ja)
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東吾 中谷
貴大 岡口
教夫 池戸
毅 横山
智仁 藪下
高山　徹
高須賀　祥一
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パナソニックＩｐマネジメント株式会社
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Priority to JP2018525057A priority Critical patent/JP7046803B2/ja
Priority to CN201780039851.9A priority patent/CN109417276B/zh
Publication of WO2018003551A1 publication Critical patent/WO2018003551A1/fr
Priority to US16/228,683 priority patent/US10985533B2/en

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    • H01S5/00—Semiconductor lasers
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
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    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
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    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/34353—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on (AI)GaAs
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    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
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    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
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    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms

Abstract

L'invention concerne un dispositif laser à semiconducteur (100) comprenant : une première couche en semiconducteur (13) d'un premier type de conductivité ; une deuxième couche en semiconducteur (14) du premier type de conductivité ; une couche active (15) ; une troisième couche en semiconducteur (16) d'un deuxième type de conductivité qui est différent du premier type de conductivité ; et une quatrième couche en semiconducteur (17) du deuxième type de conductivité. Si Eg2 et Eg3 sont les valeurs maximales des énergies de bande interdite respectives de la deuxième couche en semiconducteur (14) et de la troisième couche en semiconducteur (16), Eg2 et Eg3 satisfont l'expression relationnelle Eg2 < Eg3. La troisième couche en semiconducteur (16) comporte une première couche de région dans laquelle l'énergie de bande interdite diminue de manière monotone vers la quatrième couche en semiconducteur (17). Si N2 est la concentration d'impuretés de la deuxième couche en semiconducteur (14) et N3 la concentration d'impuretés de la troisième couche en semiconducteur (16), N2 et N3 satisfont l'expression relationnelle N2 > N3.
PCT/JP2017/022317 2016-06-30 2017-06-16 Dispositif laser à semiconducteur, module laser à semiconducteur et système de source de lumière laser pour soudage WO2018003551A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018525057A JP7046803B2 (ja) 2016-06-30 2017-06-16 半導体レーザ装置、半導体レーザモジュール及び溶接用レーザ光源システム
CN201780039851.9A CN109417276B (zh) 2016-06-30 2017-06-16 半导体激光器装置、半导体激光器模块及焊接用激光器光源系统
US16/228,683 US10985533B2 (en) 2016-06-30 2018-12-20 Semiconductor laser device, semiconductor laser module, and laser light source system for welding

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JP2016130546 2016-06-30
JP2016-130546 2016-06-30

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US16/228,683 Continuation US10985533B2 (en) 2016-06-30 2018-12-20 Semiconductor laser device, semiconductor laser module, and laser light source system for welding

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JP (1) JP7046803B2 (fr)
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WO2021206012A1 (fr) * 2020-04-06 2021-10-14 ヌヴォトンテクノロジージャパン株式会社 Dispositif laser à semi-conducteur et procédé de fabrication de dispositif laser à semi-conducteur
JP7413599B1 (ja) 2022-09-01 2024-01-15 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ－ｖ族化合物半導体発光素子及びｉｉｉ－ｖ族化合物半導体発光素子の製造方法
WO2024084898A1 (fr) * 2022-10-17 2024-04-25 スタンレー電気株式会社 Élément électroluminescent à cavité verticale

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US20220085574A1 (en) * 2020-09-14 2022-03-17 Lumentum Japan, Inc. Optical semiconductor device
CN113363360B (zh) * 2021-05-21 2022-09-09 厦门士兰明镓化合物半导体有限公司 垂直结构led芯片及其制造方法
CN116191203B (zh) * 2023-04-21 2023-07-14 深圳市星汉激光科技股份有限公司 一种高效率蓝光半导体激光芯片

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WO2010050071A1 (fr) * 2008-10-31 2010-05-06 オプトエナジー株式会社 Elément laser semi-conducteur
WO2014123092A1 (fr) * 2013-02-05 2014-08-14 株式会社トクヤマ Élément électroluminescent semi-conducteur à base de nitrure
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WO2021206012A1 (fr) * 2020-04-06 2021-10-14 ヌヴォトンテクノロジージャパン株式会社 Dispositif laser à semi-conducteur et procédé de fabrication de dispositif laser à semi-conducteur
JP7413599B1 (ja) 2022-09-01 2024-01-15 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ－ｖ族化合物半導体発光素子及びｉｉｉ－ｖ族化合物半導体発光素子の製造方法
WO2024048538A1 (fr) * 2022-09-01 2024-03-07 Ｄｏｗａエレクトロニクス株式会社 Élément électroluminescent à semi-conducteur à composé iii-v et procédé de production d'élément électroluminescent à semi-conducteur à composé iii-v
WO2024084898A1 (fr) * 2022-10-17 2024-04-25 スタンレー電気株式会社 Élément électroluminescent à cavité verticale

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US10985533B2 (en) 2021-04-20
CN109417276A (zh) 2019-03-01

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