WO2016117338A1 - Dispositif semiconducteur - Google Patents

Dispositif semiconducteur Download PDF

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Publication number
WO2016117338A1
WO2016117338A1 PCT/JP2016/000269 JP2016000269W WO2016117338A1 WO 2016117338 A1 WO2016117338 A1 WO 2016117338A1 JP 2016000269 W JP2016000269 W JP 2016000269W WO 2016117338 A1 WO2016117338 A1 WO 2016117338A1
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layer
gate
voltage
electrode
gate electrode
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PCT/JP2016/000269
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English (en)
Japanese (ja)
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剛志 井上
岩村　剛宏
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株式会社デンソー
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

Definitions

  • the present disclosure relates to a semiconductor device in which a semiconductor switching element having an insulated gate structure and a free wheel diode element (hereinafter referred to as an FWD element) are formed on a common semiconductor substrate.
  • a semiconductor switching element having an insulated gate structure and a free wheel diode element hereinafter referred to as an FWD element
  • Patent Document 1 a semiconductor device in which a semiconductor switching element having an insulated gate structure and an FWD element are formed on a common semiconductor substrate has been proposed (see, for example, Patent Document 1).
  • a P-type base layer is formed on the front surface side of the semiconductor substrate constituting the N ⁇ -type drift layer, and a P + -type collector layer and an N + -type are formed on the rear surface side of the semiconductor substrate.
  • the cathode layer is formed.
  • a plurality of trenches reaching the drift layer through the base layer are formed, and a gate electrode is embedded in the trench through a gate insulating film.
  • An N + -type emitter region is formed in the surface layer portion of the base layer so as to be in contact with the trench.
  • a first electrode electrically connected to the base layer and the emitter region is formed on the front surface side of the semiconductor substrate, and a second electrode electrically connected to the collector layer and the cathode layer is formed on the back surface side of the semiconductor substrate. Is formed. As described above, the semiconductor switching element is formed on the semiconductor substrate.
  • an FWD element having a PN junction is formed on the semiconductor substrate by the N-type drift layer and the cathode layer and the P-type base layer.
  • a power conversion device such as an inverter device or a converter device may be configured using a plurality of the semiconductor devices.
  • a gate drive voltage based on a PWM signal generated by a microcomputer or the like is applied to the gate electrode of each semiconductor device, but the gate drive voltage using the PWM signal waveform as it is has a large conduction loss.
  • the gate drive voltage using the PWM signal waveform as it is has a large conduction loss.
  • This disclosure is intended to provide a semiconductor device capable of reducing conduction loss.
  • a semiconductor device includes a semiconductor substrate including a first conductivity type drift layer, a second conductivity type base layer formed on the drift layer, and a surface layer portion of the base layer.
  • a first conductivity type emitter region formed away from the drift layer with the base layer interposed therebetween and having a higher impurity concentration than the drift layer, and a plurality of gates disposed in a surface layer portion of the base layer
  • an inversion layer that connects between the emitter region and the drift layer is formed in a portion of the base layer that is located on the opposite side of the gate electrode with the gate insulating film interposed therebetween.
  • a semiconductor switching element that allows a current to flow between the first electrode and the second electrode and has a PN junction formed by the base layer and the drift layer, and the first electrode and the second electrode
  • a free-wheeling diode element that allows current to flow between the electrodes is provided.
  • An independent gate driving voltage is applied to the plurality of gate electrodes by connecting some of the gate electrodes and the remaining gate electrodes to different gate terminals.
  • the gate insulating film is in contact with the partial gate electrode and the remaining gate electrode of the base layer.
  • the gate driving voltage at which an inversion layer connecting the emitter region and the drift layer is formed in a portion is defined as a first voltage.
  • the gate driving voltage in which the inversion layer that connects the emitter region and the drift layer is not formed in a part is defined as a second voltage.
  • the semiconductor device described above when the operation of the semiconductor device is unclear, the first voltage is applied to a part of the gate electrodes so that the part in contact with the gate insulating film where the part of the gate electrodes is disposed An inversion layer is formed. Further, when the second voltage is applied to the remaining gate electrode, an inversion layer that connects the emitter region and the drift layer is not formed in a portion in contact with the gate insulating film in which the remaining gate electrode is disposed. For this reason, when the semiconductor device is operating as a semiconductor switching element, the conduction loss of the semiconductor switching element can be reduced by the inversion layer formed along the gate insulating film in which a part of the gate electrode is disposed. When operating as an element, an inversion layer is not formed in the vicinity of the gate insulating film where the remaining gate electrode is disposed, so that conduction loss in the FWD element can be reduced.
  • a semiconductor device in another aspect of the present disclosure, includes a semiconductor substrate including a first conductivity type drift layer, a second conductivity type base layer formed on the drift layer, and a surface layer portion of the base layer.
  • a first conductivity type emitter region that is formed away from the drift layer with the base layer interposed therebetween and has a higher impurity concentration than the drift layer, and a plurality of layers disposed in a surface layer portion of the base layer
  • a conductivity type collector layer ; a first conductivity type cathode layer formed in contact with the drift layer and spaced apart from the base layer, and having a higher impurity concentration than the drift layer; and the base layer Having a first electrode pre said emitter region and electrically connected, and a second electrode connected said collector layer and the said cathode layer and electrically.
  • an inversion layer that connects between the emitter region and the drift layer is formed in a portion of the base layer that is located on the opposite side of the gate electrode with the gate insulating film interposed therebetween.
  • a semiconductor switching element that allows a current to flow between the first electrode and the second electrode, and has a PN junction formed by the base layer and the drift layer, and the first electrode and the second electrode
  • a free-wheeling diode element that allows current to flow between the electrodes.
  • An independent gate driving voltage is applied to the plurality of gate electrodes by connecting some of the gate electrodes and the remaining gate electrodes to different gate terminals.
  • the threshold voltage of the insulated gate structure having the partial gate electrode is different from the threshold voltage of the insulated gate structure having the remaining gate electrode.
  • the emitter region and the part of the base layer in contact with the gate insulating film where the part of the gate electrode is disposed An inversion layer that connects the drift layer is formed, and a portion of the base layer that is in contact with the gate insulating film where the remaining gate electrode is disposed extends from the drift layer side to an intermediate position toward the emitter region.
  • the gate driving voltage for forming the inversion layer is defined as a first voltage.
  • the gate drive voltage in which the inversion layer that connects the emitter region and the drift layer is not formed in a part is defined as a second voltage.
  • the first voltage is applied to a part of the gate electrodes, and the gate insulating film on which the part of the gate electrodes is disposed
  • the inversion layer is formed in the contact portion, and the inversion layer is not formed in the portion in contact with the gate insulating film in which the remaining gate electrode is disposed by applying the second voltage to the remaining gate electrode.
  • the inversion layer When operating as an element, the inversion layer is not formed in the vicinity of the gate insulating film where the remaining gate electrode is disposed, so that the conduction loss of the FWD element can be reduced.
  • an inversion layer is formed in the vicinity of the gate insulating film where the remaining gate electrode is disposed from the drift layer side to a midway position toward the emitter region. For this reason, when the semiconductor device is operating as a semiconductor switching element, the conduction loss of the semiconductor switching element can be reduced as compared with the case where the second voltage is applied to the remaining gate electrode.
  • the semiconductor device operates as an FWD element
  • an inversion layer that connects the emitter region and the drift layer is formed along the gate insulating film in which the remaining gate electrode is disposed on the remaining gate electrode. Compared with the case where a voltage is applied, the conduction loss of the FWD element can be reduced.
  • FIG. 1 is a cross-sectional view of the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 2 is a circuit diagram when a power conversion device is configured using the semiconductor device shown in FIG.
  • FIG. 3A is a timing chart showing gate drive voltages applied to the first and second gate electrodes when the semiconductor device operates as an IGBT element.
  • FIG. 3B is a timing chart showing gate drive voltages applied to the first and second gate electrodes when the semiconductor device operates as an FWD element.
  • FIG. 3C is a timing chart showing gate drive voltages applied to the first and second gate electrodes when the operation of the semiconductor device is unknown.
  • FIG. 3A is a timing chart showing gate drive voltages applied to the first and second gate electrodes when the semiconductor device operates as an IGBT element.
  • FIG. 3B is a timing chart showing gate drive voltages applied to the first and second gate electrodes when the semiconductor device operates as an FWD element.
  • FIG. 3C is a timing chart showing gate drive voltages applied to the first and second
  • FIG. 4 is a cross-sectional view of the semiconductor device according to the second embodiment of the present disclosure.
  • FIG. 5A is a timing chart showing gate drive voltages applied to the first and second gate electrodes when the semiconductor device operates as an FWD element.
  • FIG. 5B is a timing chart showing gate drive voltages applied to the first and second gate electrodes when the operation of the semiconductor device is unknown.
  • the semiconductor device 1 of the present embodiment includes a so-called reverse conducting IGBT (RC-IGBT) having an IGBT element 2 and an FWD element 3 as semiconductor switching elements.
  • the FWD element 3 is formed on an N ⁇ -type common semiconductor substrate 10 that functions as the drift layer 11.
  • a P-type base layer 12 is formed on the drift layer 11 (on the one surface 10a side of the semiconductor substrate 10).
  • a plurality of trenches 13 a and 13 b are formed so as to penetrate the base layer 12 and reach the drift layer 11, and the base layer 12 is separated into a plurality by the trenches 13 a and 13 b.
  • the trenches 13a and 13b are formed at equal intervals along one direction (the depth direction in the drawing in FIG. 2) of the surface directions of the one surface 10a of the semiconductor substrate 10. Further, one surface 10 a of the semiconductor substrate 10 is configured by one surface of the base layer 12 opposite to the drift layer 11.
  • a gate insulating film 14 formed so as to cover the wall surfaces of the respective trenches 13a and 13b, and a gate electrode 15a formed of polysilicon or the like formed on the gate insulating film 14 , 15b.
  • a trench gate structure is configured.
  • the gate electrodes 15a and 15b formed in the trenches 13a and 13b are connected to gate terminals G1 and G2 in which a part of the gate electrodes 15a and the remaining gate electrode 15b are different. . That is, different gate drive voltages are applied to some of the gate electrodes 15a and the remaining gate electrodes 15b.
  • a part of the gate electrodes is referred to as a first gate electrode 15a
  • the remaining gate electrode is referred to as a second gate electrode 15b
  • a trench in which the first gate electrode 15a is disposed is referred to as a first trench 13a and a second gate electrode.
  • the trench in which the gate electrode 15b is disposed will be described as the second trench 13b.
  • first trench 13a and the second trench 13b are perpendicular to the extending direction of the first and second trenches 13a and 13b (FIG. 1).
  • Two second trenches 13b are formed between the first trenches 13a in the left-right direction of the middle sheet).
  • an N + -type emitter region 16 and a P + -type contact region 17 sandwiched between the emitter regions 16 are formed.
  • the emitter region 16 is configured to have a higher impurity concentration than the drift layer 11, is terminated in the base layer 12, and is in contact with the side surfaces of the first and second trenches 13a and 13b.
  • the contact region 17 has a higher impurity concentration than the base layer 12, and is formed so as to terminate in the base layer 12, similarly to the emitter region 16.
  • the emitter region 16 is formed on the side surfaces of the first and second trenches 13a and 13b along the longitudinal direction of the first and second trenches 13a and 13b in the region between the first and second trenches 13a and 13b. It extends in the shape of a rod so as to be in contact with the first and second trenches 13a and 13b, and terminates inside the tip.
  • the contact region 17 is sandwiched between the two emitter regions 16 and extends in a rod shape along the longitudinal direction of the first and second trenches 13a and 13b (that is, the emitter region 16). In the present embodiment, the contact region 17 is formed deeper than the emitter region 16 with respect to the one surface 10a of the semiconductor substrate 10.
  • an interlayer insulating film 18 made of BPSG or the like is formed on the base layer 12 (one surface 10a of the semiconductor substrate 10).
  • a contact hole 18 a is formed in the interlayer insulating film 18 to expose a part of the emitter region 16 and the contact region 17.
  • a first electrode 19 is formed on the interlayer insulating film 18.
  • the first electrode 19 is electrically connected to the emitter region 16 and the contact region 17 through the contact hole 18a. That is, the first electrode 19 functions as an emitter electrode in the IGBT element 2 and also functions as an anode element in the FWD element 3.
  • a P-type collector layer 20 and an N-type cathode layer 21 are formed on the drift layer 11 opposite to the base layer 12 side (the other surface 10b side of the semiconductor substrate 10). That is, the IGBT element 2 and the FWD element 3 are basically partitioned depending on whether the layer formed on the other surface 10 b side of the semiconductor substrate 10 is the collector layer 20 or the cathode layer 21.
  • a second electrode 22 is formed on the collector layer 20 and the cathode layer 21 (the other surface 10b of the semiconductor substrate 10).
  • the second electrode 22 functions as a collector electrode in the IGBT element 2 and functions as a cathode electrode in the FWD element 3.
  • the FWD element 3 having a PN junction with the base layer 12 and the contact region 17 as an anode and the drift layer 11 and the cathode layer 21 as a cathode is configured as described above.
  • the N type, the N + type, and the N ⁇ type correspond to the first conductivity type of the present disclosure
  • the P type and the P + type correspond to the second conductivity type of the present disclosure.
  • the semiconductor device 1 is applied to a power conversion device such as an inverter device that drives an inductive load such as a motor, or a converter device that includes an inductor or the like to boost and step down a DC voltage
  • a power conversion device such as an inverter device that drives an inductive load such as a motor, or a converter device that includes an inductor or the like to boost and step down a DC voltage
  • the power conversion apparatus includes a high-potential-side DC power supply line 31 and a low-potential-side DC power supply line (ground) 32.
  • the semiconductor devices 1A and 1B are connected in series with an output terminal Nt connected to a load between the high potential side DC power supply line 31 and the low potential side DC power supply line 32 so as to constitute a half-bridge circuit. Is arranged.
  • the semiconductor devices 1A and 1B are both the semiconductor device 1 shown in FIG. 1 described above.
  • the semiconductor device 1A basically has the above-described configuration, but the semiconductor device 1A includes the main element Ma having the IGBT element 2aM and the FWD element 3aM, and the IGBT element 2aS and the FWD element 3aS. In addition, a sense element Sa is formed which passes a minute current proportional to the current flowing through the main element Ma.
  • the semiconductor device 1B basically has the above-described configuration, but the semiconductor device 1B includes the main element Mb having the IGBT element 2bM and the FWD element 3bM, and the IGBT element 2bS and the FWD element 3bS.
  • a sense element Sb that allows a minute current proportional to the current flowing in the main element Mb to be formed is formed.
  • the gate drive voltages VGH1, VGH2, VGL1, and VGL2 are applied to the first and second gate electrodes 15a and 15b in the semiconductor devices 1A and 1B, respectively.
  • Sense resistors 4a and 4b are connected between the terminals S1 and S2 connected to the main elements Ma and Mb and the sense elements Sa and Sb in the semiconductor devices 1A and 1B, respectively.
  • the sense resistors 4a and 4b constitute a current detection device together with current detection units 45a and 45b described later.
  • the power conversion device includes a microcomputer 41.
  • the microcomputer 41 includes a PWM signal generation unit 42 that generates PWM signals FH and FL on the high side and low side of the half bridge circuit, a storage device (not shown), peripheral devices, and the like.
  • the PWM signals FH and FL are input to the drive ICs 44a and 44b via the photocouplers 43a and 43b, respectively.
  • the drive IC 44a includes a current detection unit 45a, a gate voltage control unit 46a, a first drive circuit 47a, and a second drive circuit 48a, and operates by being supplied with a power supply voltage VDDA (for example, 15V).
  • the drive IC 44b includes a current detection unit 45b, a gate voltage control unit 46b, a first drive circuit 47b, and a second drive circuit 48b, and operates when a power supply voltage VDDB (for example, 15 V) is supplied. It has a configuration.
  • the drive ICs 44a and 44b are provided separately for the high-side semiconductor device 1A and the low-side semiconductor device 1B, respectively. Therefore, the drive ICs 44a and 44b only need to have a withstand voltage corresponding to the power supply voltages VDDA and VDDB (that is, withstand voltage according to the gate drive voltage).
  • the current detection unit 45b detects the magnitude and polarity of the current flowing through the semiconductor device 1B based on the sense voltage VSL generated in the sense resistor 4b, and outputs the detection result to the gate voltage control unit 46b.
  • the gate voltage control unit 46b determines the state of the semiconductor device 1B based on the detection result input from the current detection unit 45b and a threshold current Is described later. Specifically, the gate voltage control unit 46b is configured so that the semiconductor device 1B operates as (a) the IGBT element 2, (b) operates as the FWD element 3, and (c) the IGBT element 2 and the FWD element. It is determined which of the three operations is unknown or in which state.
  • the first gate drive signal VGL1 to be applied to the first gate electrode 15a through the first drive circuit 47b is generated, and the second gate through the second drive circuit 48b.
  • a second gate drive signal VGL2 to be applied to the electrode 15b is generated.
  • the gate voltage control unit 46b is configured to generate a plurality of gate drive voltages VGL1 and VGL2 according to the state of the semiconductor device 1B.
  • the present embodiment is configured to generate four types of second gate drive voltages VGL2.
  • the operation of the semiconductor device 1B is unclear when the current flowing through the semiconductor device 1B is very small and the detection result detected by the current detection unit 45b is smaller than the current threshold Is, for example, the semiconductor device Occurs when switching between 1A and semiconductor device 1B is switched.
  • a threshold setting circuit 49b is externally attached to the drive IC 44b.
  • This threshold value setting circuit 49b is configured with a floating potential equal to the emitter potential of the semiconductor device 1B (the ground potential because the semiconductor device 1B is on the low potential side) as a reference potential, and is defined by dividing the voltage VDDB with resistors R1 and R2. A voltage Vml is generated. Then, the gate voltage control unit 46b determines the threshold current Is when compared with the current flowing through the semiconductor device 1B using the specified voltage Vm1.
  • a switching signal Sk is input to the drive IC 44b (gate voltage control unit 46b).
  • the gate voltage control unit 46b is configured to generate a plurality of gate drive voltages VGL1 and VGL2 according to the state of the semiconductor device 1B as described above. It is possible to determine whether to generate (apply) a gate drive voltage.
  • the configuration of the drive IC 44a is the same as that of the drive IC 44b.
  • the first and second gate drive voltages VGL1 and VGL2 applied to the first and second gate electrodes 15a and 15b of the semiconductor device 1B are shown in FIGS. This will be described with reference to 3C.
  • the gate voltage control unit 46b determines that (a) the semiconductor device 1B operates as the IGBT element 2, it determines that (b) the semiconductor device 1B operates as the FWD element 3.
  • the first and second gate drive voltages VGH1 and VGH2 applied to the high-side semiconductor device 1A are basically the same as the first and second gate drive voltages VGL1 and VGL2 applied to the low-side semiconductor device 1B. Is the same.
  • the waveform of the gate drive voltage VGL1 is the same as that of the PWM signal FL.
  • the high-level gate driving voltage is such that an inversion layer that connects the emitter region 16 and the drift layer 11 is formed in a portion of the base layer 12 that is in contact with the first and second trenches 13a and 13b. Voltage.
  • the low-level gate drive voltage is a voltage at which an inversion layer that connects the emitter region 16 and the drift layer 11 is not formed in a portion of the base layer 12 in contact with the first and second trenches 13a and 13b. Yes, in this embodiment, it is set to 0V.
  • the high-level gate drive voltage corresponds to the first voltage of the present disclosure
  • the low-level gate drive voltage corresponds to the second voltage of the present disclosure.
  • the low level voltage is assumed to be 0 V. However, the low level voltage is applied to the emitter region 16 and the drift layer 11 in the portion of the base layer 12 that is in contact with the first and second trenches 13a and 13b. Any voltage may be used as long as the inversion layer connecting the two is not formed. That is, any voltage lower than the threshold voltage Vth of the insulated gate structure having the first and second gate electrodes 15a and 15b may be used.
  • one of the second gate drive voltages VGL2a and VGL2b is applied to the second gate electrode 15b according to the switching signal Sk.
  • the second gate drive voltage VGL2a is a signal having the same waveform as the first gate drive voltage VGL1a.
  • the second gate drive voltage VGL2b is a signal that is at a high level from time T1 before time T2 and is a negative voltage from time T1 to time T3.
  • the first and second gates One of the first and second gate drive voltages VGL1a, VGL1b, VGL2a, and VGL2b is applied to the electrodes 15a and 15b in accordance with the switching signal Sk.
  • the first and second gate drive voltages VGL1a and VGL2a are low level signals.
  • the first and second gate drive voltages VGL1b and VGL2b are signals that are at a low level from time T4 to a high level from time T4 to time T5.
  • the time point T4 is a time point before the recovery current starts to flow through the semiconductor device 1B.
  • any one of the first and second gate drive voltages VGL1a, VGL1b, VGL2a, and VGL2b is applied to the first and second gate electrodes 15a and 15b, an inversion layer is not formed in the base layer 12.
  • An increase in the forward voltage of the FWD element 3 can be suppressed, and conduction loss in the FWD element 3 can be reduced.
  • first and second gate drive voltages VGL1b and VGL2b are applied to the first and second gate electrodes 15a and 15b, an inversion layer is formed in the base layer 12, thereby causing the FWD from the time T4 to the time T5. Holes accumulated in the element 3 can be reduced. Therefore, the recovery current can be reduced and the recovery loss can be reduced.
  • the same gate drive voltage is applied to the first and second gate electrodes 15a and 15b.
  • the first gate drive voltage VGL1a is applied to the first gate electrode 15a
  • the second The second gate drive voltage VGL2b may be applied to the gate electrode 15b.
  • one of the second gate drive voltages VGL2a to VGL2d is input to the second gate electrode 15b according to the switching signal Sk.
  • the gate drive voltage VGL2a is a low level signal.
  • the gate drive voltage VGL2b is a low level until time T6, and is a negative voltage from time T6 to time T8 before the gate drive signal VGL1 falls to low level at time T7.
  • the gate drive voltage VGL2c is a signal that is at a low level from time T9 and is at a high level from time T9 to time T10. Note that time T9 is a time before the recovery current starts flowing when the semiconductor device 1B operates as the FWD element 3.
  • the gate drive voltage VGL2d is a combination of the gate drive voltage VGL2b and the gate drive voltage VGL2c.
  • the recovery loss can be reduced, and the semiconductor device 1B operates as the IGBT element 2. In this case, the switching loss can be reduced.
  • the first gate electrode 15a and the second gate electrode 15b are provided, and independent gate drive voltages VGL1 and VGL2 are applied to the first and second gate electrodes 15a and 15b. I have to.
  • a high level gate drive voltage VGL1 is applied to the first gate electrode 15a, and a low level gate drive voltage VGL2 is applied to the second gate electrode 15b.
  • the first gate drive voltage VGL1 which is a high level signal is applied to the first gate electrode 15a, whereby the first gate electrode 15a has a first level. Since the inversion layer is formed in the vicinity of the gate electrode 15a, the conduction loss in the IGBT element 2 can be reduced.
  • the second gate drive voltage VGL2 that is at a low level is applied to the second gate electrode 15b, whereby the second gate electrode 15b in the base layer 12 is applied. Since no inversion layer is formed in the vicinity, the conduction loss in the FWD element 3 can be reduced.
  • the second gate electrode 15b when the operation of the semiconductor device 1 is unknown, the second gate electrode 15b has a gate drive voltage VGL2b that becomes a negative voltage before and after the first gate drive voltage VGL1 falls from the high level to the low level.
  • VGL2d can also be applied (see FIG. 3C). For this reason, when the gate drive voltages VGL2b and VGL2d are applied, a part of holes accumulated in the drift layer 11 can be extracted in advance through the accumulation layer, and switching loss can be reduced.
  • the second gate electrode 15b has a gate drive signal that is at a high level from the point before the recovery current starts flowing when the semiconductor device 1 operates as the FWD element 3.
  • VGL2c and VGL2d can also be applied (see FIG. 3C). For this reason, when the gate drive signals VGL2c and VGL2d are applied, holes accumulated in the FWD element 3 can be reduced, and recovery loss can be reduced.
  • the second gate electrode 15b has a gate drive voltage VGL2b that becomes a negative voltage before and after the first gate drive voltage VGL1 falls from the high level to the low level. It can be applied (see FIG. 3A). For this reason, when the gate drive voltage VGL2b is applied, the switching loss can be reduced.
  • the gate drive signal VGL2b that is at a high level from the time before the recovery current starts flowing can be applied to the second gate electrode 15b. (See FIG. 3B). For this reason, when the gate drive signal VGL2b is applied, holes accumulated in the FWD element 3 can be reduced, and recovery loss can be reduced.
  • the depth of the emitter region 16 in contact with the first trench 13a is made deeper than the depth of the emitter region 16 in contact with the second trench 13b.
  • the semiconductor device 1 of the present embodiment since a current flows in the thickness direction of the semiconductor substrate 10, the length between the emitter region 16 and the drift layer 11 along the current flow direction in the base layer 12.
  • the portion located on the opposite side of the first gate electrode 15a with the gate insulating film 14 interposed therebetween is shorter than the portion located on the opposite side of the second gate electrode 15b with the gate insulating film 14 interposed therebetween. That is, each emitter region 16 is formed so that the peak concentration positions of the emitter region 16 in contact with the first trench 13a and the emitter region 16 in contact with the second trench 13b are different.
  • the threshold voltage Vth of the gate insulating structure having the first gate electrode 15a is different from the threshold voltage Vth of the gate insulating structure having the second gate electrode 15b.
  • the threshold voltage Vth of the insulated gate structure having the second gate electrode 15b is The threshold voltage Vth of the insulated gate structure having one gate electrode 15a is set higher.
  • the threshold voltage Vth of the insulated gate structure in this embodiment forms an inversion layer that connects the emitter region 16 and the drift layer 11 when a gate drive voltage is applied to the first and second gate electrodes 15a and 15b. This is the minimum voltage required to
  • the above is the configuration of the semiconductor device 1 in the present embodiment.
  • the first and second gate drive voltages VGL1 and VGL2 applied to the gate electrodes 15a and 15b of the semiconductor device 1B on the low side when such a semiconductor device 1 is applied to the power conversion device of FIG. This will be described with reference to FIGS. 3A, 5A, and 5B.
  • the gate voltage control unit 46b determines that (a) the semiconductor device 1B operates as the IGBT element 2, it determines that (b) the semiconductor device 1B operates as the FWD element 3.
  • the first and second gate drive voltages VGH1 and VGH2 applied to the high-side semiconductor device 1A are basically the same as the first and second gate drive voltages VGL1 and VGL2 applied to the low-side semiconductor device 1B. Is the same.
  • the threshold voltage Vth of the insulated gate structure having the second gate electrode 15b is higher than the threshold voltage Vth of the insulated gate structure having the first gate electrode 15a.
  • the high-level gate drive voltage is applied to the first and second gate electrodes 15a and 15b, and the emitter region 16 is only applied to the portion of the base layer 12 that is in contact with the first trench 13a.
  • an inversion layer that connects the drift layer 11 is formed, and the inversion layer that connects the emitter region 16 and the drift layer 11 is not formed in a portion in contact with the second trench 13b.
  • the inversion layer that does not connect the emitter region 16 and the drift layer 11 to the portion of the base layer 12 in contact with the second trench 13b. is formed. More specifically, an inversion layer is formed from the portion on the drift layer 11 side in the portion in contact with the second trench 13 b in the base layer 12 to the middle position toward the emitter region 16. For this reason, since the second gate drive voltages VGL2a and VGL2b are applied to the second gate electrode 15b, an inversion layer is formed in the portion on the drift layer 11 side in the portion in contact with the second trench 13b.
  • the conduction loss in the IGBT element 2 can be reduced by applying a high level signal also to the second gate electrode 15b.
  • the first and second gate drive voltages VGL1a and VGL2a are signals that are at a high level until time T11 and are at a low level from time T11, and the semiconductor device 1B operates as the IGBT element 2.
  • This signal is similar to the first gate drive voltage VGL1 applied to the first gate electrode 15a. That is, the waveforms of the first and second gate drive voltages VGL1a and VGL2a in FIG. 5A are the same as that of the PWM signal FL.
  • the emitter region 16 is formed in a portion of the base layer 12 in contact with the first trench 13a.
  • the inversion layer that connects the emitter region 16 and the drift layer 11 is not formed in the portion in contact with the second trench 13b. Therefore, a gate driving voltage is applied to the first and second gate electrodes 15a and 15b so that an inversion layer connecting the emitter region 16 and the drift layer 11 is formed in a portion of the base layer 12 in contact with the first trench 13a.
  • the conduction loss in the FWD element 3 can be reduced.
  • the waveforms of the first and second gate drive voltages VGL1a and VGL2a are the same as that of the PWM signal FL, the control of the gate voltage control unit 46b can be simplified.
  • the first and second gate drive voltages VGL1b and VGL2b are low level signals.
  • the first and second gate drive voltages VGL1c and VGL2c are low level signals until time T12.
  • the first gate drive voltage VGL1c is a signal that is at a high level from time T12 to time T13
  • the second gate drive voltage VGL2c is a signal that is at a high level from time T12 to time T14.
  • the time point T12 is a time point before the recovery current starts to flow through the semiconductor device 1B. The reason why the first gate drive voltage VGL1c becomes high level at time T13 before time T14 after it becomes high level from time T12 is to suppress a short circuit.
  • the first and second gate drive voltages VGL1b, VGL2b, VGL1c, and VGL2c are applied to the first and second gate electrodes 15a and 15b, an inversion layer is not formed in the base layer 12, so that the FWD element 3 As a result, the forward voltage can be suppressed from increasing, and the conduction loss of the FWD element 3 can be reduced.
  • first and second gate drive voltages VGL1c and VGL2c are applied to the first and second gate electrodes 15a and 15b.
  • the second gate drive voltage VGL2c is applied to the second gate electrode 15b. Therefore, the recovery current can be reduced and the recovery loss can be reduced.
  • the period from time T12 to time T14 in FIG. 5A is longer than the period from time T4 to time T5 in FIG. 3B.
  • the inversion layer connects the emitter region 16 and the drift layer 11 to the portion of the base layer 12 in contact with the second trench 13b even when the second gate drive voltage VGL2c of high level is applied to the second gate electrode 15b.
  • VGL2c of high level is applied to the second gate electrode 15b.
  • a high level signal can be applied for a long time before the recovery current starts to flow, and the recovery loss can be further reduced.
  • the first and second gate drive voltages VGL1d and VGL2d are combinations of the first and second gate drive voltages VGL1a and VGL2a and the first and second gate drive voltages VGL1c and 2c. For this reason, the recovery loss can be reduced while reducing the conduction loss in the FWD element 3.
  • the first and second gate drive voltages VGL1d and VGL2d are low in the period from the time T11 to the time T12, but are set to the high level in the period from the time T11 to the time T12. It may be.
  • the same gate drive voltage is applied to the first and second gate electrodes 15a and 15b.
  • the first gate drive voltage VGL1a is applied to the first gate electrode 15a
  • the second The second gate drive voltage VGL2b may be applied to the gate electrode 15b.
  • one of the second gate drive voltages VGL2a to VGL2h is input to the second gate electrode 15b according to the switching signal Sk.
  • the second gate drive voltage VGL2a is the same signal as the first gate drive voltage VGL1a.
  • the second gate drive voltage VGL2b is a signal that is at a high level until time T14 and is a negative voltage from time T14 to time T16 before the gate drive signal VGL1 falls to a low level at time T15.
  • the gate drive voltage VGL2c is a signal that is at a high level from time T15, and is at a high level from time T17 to time T18 after falling to a low level at time T15.
  • the time T17 is a time before the recovery current starts flowing when the semiconductor device 1B operates as the FWD element 3.
  • the semiconductor device 1B when the second gate drive voltages VGL2a to VGL2c are applied to the second gate electrode 15b, if the semiconductor device 1B operates as the IGBT element 2, the second of the base layers 12 Since the inversion layer is also formed in the portion in contact with the trench 13b, the conduction loss in the IGBT element 2 can be reduced. Further, when the semiconductor device 1B operates as the FWD element 3, an inversion layer that does not connect the emitter region 16 and the drift layer 11 is formed in a portion of the base layer 12 that is in contact with the second trench 13b. The conduction loss in the FWD element 3 can be reduced as compared with the case where a gate drive voltage for forming an inversion layer connecting the emitter region 16 and the drift layer 11 is applied to the second gate electrode 15b.
  • the semiconductor device 1B when the second gate drive voltage VGL2c is applied to the second gate electrode 15b, if the semiconductor device 1B operates as the IGBT element 2, it is accumulated in the drift layer 11 from time T14 to time T16. Since some of the holes can be extracted in advance through the storage layer, switching loss can be reduced.
  • the semiconductor device 1B When the second gate drive voltage VGL2c is applied to the second gate electrode 15b, if the semiconductor device 1B operates as the FWD element 3, it is accumulated in the FWD element 3 from time T17 to time T18. Can reduce the number of holes. Therefore, the recovery current can be reduced and the recovery loss can be reduced.
  • the gate drive voltage VGL2d is a combination of the gate drive voltage VGL2c and the gate drive voltage VGL2d. For this reason, when the gate drive voltage VGL2d is applied to the second gate electrode 15b, when the semiconductor device 1B operates as the FWD element 3, the conduction loss and the recovery loss of the FWD element 3 can be reduced. When 1B is operating as the IGBT element 2, switching loss can be reduced.
  • the gate drive voltage VGL2e is a low level signal.
  • the gate drive voltage VGL2f is a low level gate drive signal until time T14, and is a signal that becomes a negative voltage from time T14 to time T16 before the gate drive signal VGL1 falls to low level at time T15.
  • the gate drive voltage VGL2g is a signal that is at a low level from time T17 and is at a high level from time T17 to time T18.
  • the gate drive voltages VGL2e to VGL2g are applied to the second gate electrode 15b, if the semiconductor device 1B is operating as the FWD element 3, the second trench 13b in the base layer 12 is used. Since the inversion layer is not formed in the portion in contact with the FWD element 3, the conduction loss in the FWD element 3 can be reduced.
  • the semiconductor device 1B when the second gate drive voltage VGL2f is applied to the second gate electrode 15b, if the semiconductor device 1B operates as the IGBT element 2, it is accumulated in the drift layer 11 from time T14 to time T16. Since some of the holes can be extracted in advance through the storage layer, switching loss can be reduced.
  • the semiconductor device 1B When the second gate drive voltage VGL2g is applied to the second gate electrode 15b, if the semiconductor device 1B operates as the FWD element 3, it is accumulated in the FWD element 3 from time T17 to time T18. Can reduce the number of holes. Therefore, the recovery current can be reduced and the recovery loss can be reduced.
  • the gate drive voltage VGL2h is a combination of the gate drive voltage VGL2f and the gate drive voltage VGL2g. Therefore, when the gate drive voltage VGL2h is applied to the second gate electrode 15b, when the semiconductor device 1B operates as the FWD element 3, the conduction loss and the recovery loss of the FWD element 3 can be reduced, and the semiconductor device When 1B is operating as the IGBT element 2, switching loss can be reduced.
  • the threshold voltage Vt of the insulated gate structure having the second gate electrode 15b is set higher than the threshold voltage Vt of the insulated gate structure having the first gate electrode 15a.
  • a high level voltage is applied to the first and second gate electrodes 15a and 15b, an inversion layer that connects the emitter region 16 and the drift layer 11 to a portion of the base layer 12 that is in contact with the first trench 13a.
  • the inversion layer is formed in a portion of the base layer 12 that is in contact with the second trench 13 b from the drift layer 11 side to the middle of the emitter region 16.
  • the semiconductor device 1 becomes the IGBT element 2.
  • the conduction loss in the IGBT element 2 can be reduced.
  • the semiconductor device 1 operates as the FWD element 3, compared with a case where a gate driving voltage is applied to form an inversion layer that connects the emitter region 16 and the drift layer 11 to the second gate electrode 15 b.
  • the conduction loss of the FWD element 3 can be reduced.
  • the semiconductor device 1 When the operation of the semiconductor device 1 is unknown, when the low-level gate drive voltages VGL2e to 2h are applied to the second gate electrode 15b (see FIG. 5B), the semiconductor device 1 operates as the FWD element 3. Can further reduce the conduction loss in the FWD element 3.
  • the second gate electrode 15b has a gate drive voltage that becomes a negative voltage before and after the first gate drive voltage VGL1 falls from the high level to the low level.
  • VGL2b, VGL2d, VGL2f, and VGL2h can be applied (see FIG. 5B).
  • the gate drive voltages VGL2b, VGL2d, VGL2f, and VGL2h are applied to the second gate electrode 15b, a part of the holes accumulated in the drift layer 11 is passed through the accumulation layer in advance. Can be pulled out and switching loss can be reduced.
  • the second gate electrode 15b has a gate drive signal that is at a high level from the point before the recovery current starts flowing when the semiconductor device 1 operates as the FWD element 3.
  • VGL2c, VGL2d, VGL2g, and VGL2h can be applied (see FIG. 5B). Therefore, when the gate drive signals VGL2c, VGL2d, VGL2g, and VGL2h are applied to the second gate electrode 15b, holes accumulated in the FWD element 3 can be reduced, and recovery loss can be reduced.
  • the inversion layer that connects the emitter region 16 and the drift layer 11 is not formed even when a high level signal is applied to the second gate electrode 15b, the high level period can be extended. For this reason, recovery loss can be further reduced.
  • the first conductivity type is N type and the second conductivity type is P type.
  • the first conductivity type is P type
  • the second conductivity type is N type. You can also.
  • the first trench 13a and the second trench 13b are perpendicular to the extending direction of the first and second trenches 13a and 13b (see FIG.
  • the first and second gate electrodes 15a and 15b are arranged in such a manner that the two second trenches 13b are arranged between the first trenches 13a. The manner can be changed as appropriate.
  • the semiconductor device 1 that flows current in the thickness direction of the semiconductor substrate 10 has been described as an example.
  • the present disclosure is applied to the semiconductor device 1 that flows current in the plane direction of the semiconductor substrate 10.
  • the first and second gate electrodes 15a and 15b are not arranged in the first and second trenches 13a and 13b, but are formed on a so-called planar type semiconductor device 1B arranged on the one surface 10a of the semiconductor substrate 10. The disclosure can also be applied.
  • the structure for making the threshold voltage of the gate insulating structure having the first gate electrode 15a different from the threshold voltage of the gate insulating structure having the second gate electrode 15b can be changed as appropriate.
  • the gradient of the impurity concentration is made in the base layer 12, and the impurity concentration of the portion in contact with the second trench 13b in the base layer 12 is higher than the impurity concentration of the portion in contact with the first trench 13a. It may be made to become.

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Abstract

L'invention concerne un dispositif semiconducteur, possédant un substrat en semiconducteur (10) qui comprend une couche de dérive (11), une couche de base (12) sur la couche de dérive, une région d'émetteur (16) sur la partie couche de surface de la couche de base, une pluralité d'électrodes de gâchette (15a, 15b) sur la partie couche de surface de la couche de base avec une pluralité de films d'isolation de gâchette (14) interposés entre celles-ci, une couche de cathode (21) et une couche de collecteur (20) en contact avec la couche de dérive, une première électrode (19) reliée à la couche de base et à la région d'émetteur, et une deuxième électrode (22) reliée à la couche de collecteur et à la couche de cathode. La tension d'attaque de gâchette à laquelle une couche d'inversion est formée est définie comme étant une première tension, et la tension d'attaque de gâchette à laquelle aucune couche d'inversion n'est formée est définie comme étant une deuxième tension. Lorsqu'il est impossible de faire la distinction entre un élément de commutation semiconducteur et un fonctionnement direct en se basant sur le courant qui circule dans le substrat en semiconducteur, la première tension est appliquée à certaines des électrodes de gâchette et la deuxième tension est appliquée au reste des électrodes de gâchette.
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CN111416598A (zh) * 2019-01-04 2020-07-14 株式会社东芝 控制电路、半导体装置以及电路装置

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WO2018225600A1 (fr) 2017-06-06 2018-12-13 三菱電機株式会社 Dispositif à semi-conducteur et appareil de conversion de puissance
JP7353891B2 (ja) * 2019-09-20 2023-10-02 株式会社東芝 半導体装置及び半導体回路
JP7352443B2 (ja) 2019-11-01 2023-09-28 株式会社東芝 半導体装置の制御方法
JP7319601B2 (ja) 2019-11-01 2023-08-02 株式会社東芝 半導体装置

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CN111416598A (zh) * 2019-01-04 2020-07-14 株式会社东芝 控制电路、半导体装置以及电路装置

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