Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B81—MICROSTRUCTURAL TECHNOLOGY
  • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
  • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
  • B81C1/00349—Creating layers of material on a substrate
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/76—Making of isolation regions between components
  • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
  • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
  • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
  • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B81—MICROSTRUCTURAL TECHNOLOGY
  • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
  • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
  • B81C1/00349—Creating layers of material on a substrate
  • B81C1/00373—Selective deposition, e.g. printing or microcontact printing
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02107—Forming insulating materials on a substrate
  • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
  • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
  • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
  • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
  • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
  • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
  • H01L21/30604—Chemical etching

Definitions

• the present invention relates to a method of manufacturing a composite structure.
• a method of manufacturing a composite structure known from the state of the art and illustrated in FIG. 1, comprises the following steps:
• a donor substrate 1 comprising a first surface 2, and a support substrate 3;
• the main disadvantage of this manufacturing method of the state of the art is that the thinned useful layer 6 has a nonuniformity in thickness.
• the thinning step e) generally comprises a partial oxidation step of the useful layer 5, followed by removal of the oxidized portion of the useful layer 5.
• the oxidation partially oxidizes the useful layer 5 to a non-uniform thickness.
• This results in a variation in the thickness of the thinned thin layer 6 after removal of the oxidized portion of the useful layer 5.
• the thickness variation of the thinned useful layer 6 can exceed 10 ⁇ at the end of the set of steps.
• An object of the invention is therefore to propose a method of manufacturing structures allowing better control of the thickness variation of the thinned useful layer 6.
• the present invention aims to overcome the aforementioned drawbacks, and relates to a method of manufacturing a composite structure comprising the following steps:
• step b) is performed so that the useful layer transferred on the support substrate has a thickness profile at the end of step d), said thickness profile being adapted to compensate, at least in part, the nonuniformity of consumption of the useful layer in step e), the thinned useful layer being of substantially uniform thickness at the end of all the steps.
• the non-uniformity of the thickness profile of the useful layer at the end of step d) makes it possible to compensate for the nonuniformity of the thinning step.
• the nonuniformity of the useful thinned layer at the end of step e) is improved.
• the thinning step e) comprises a step of oxidizing the useful layer so as to form an oxide layer, the thickness of the oxide layer being non-uniform, and followed by a step of removing said oxide layer.
• step b) is performed by implantation of at least one of the two H or He species.
• the implantation of at least one of the two hydrogen or helium species makes it possible to form an embrittlement zone.
• the total dose of the implanted species is non-uniform over the extent of the zone of weakness, the nonuniformity of the dose of the implanted species being adapted to generate the thickness profile of the layer useful to the outcome of step d) fracture.
• the implantation conditions make it possible to define an embrittlement zone, and especially to condition the thickness profile of the useful layer at the end of step d).
• step d) An excess thickness of a portion of the useful layer after step d) is observed, when said portion is written, at the end of step b), in a region of the weakening zone having a dose of species implanted in excess of the rest of the weakening zone.
• the dose of implanted hydrogen ions is uniform over the entire extent of the zone of weakness, and the dose of implanted helium ions is non-uniform over the extent of the zone of weakness.
• the thickness profile of the useful layer at the end of step d) is conditioned by the dose of helium ions implanted.
• the oxide layer formed during step e) has a greater thickness in its central part, and less important going towards the annular periphery of the layer. of oxide, and the dose of implanted species is greater in the central part of the weakening zone and less important towards the annular periphery of the weakening zone.
• the overdose of species implanted in the central part of the weakening zone makes it possible to obtain a curved thickness profile of the useful layer at the end of step d).
• the thickness profile of the thinned useful layer is substantially constant over the entire extent of the thinned layer.
• the oxide layer formed during step e) has a smaller thickness in its central part, and greater towards the annular periphery of the oxide layer, and the dose species implanted during step b) is less important in the central part of the weakening zone and larger towards the annular periphery of the weakening zone.
• the overdose of implanted species of the annular periphery of the embrittlement zone makes it possible to obtain a profile of the dish thickness of the useful layer at the end of step d).
• the thickness profile of the thinned useful layer is substantially constant over the entire extent of the thinned layer.
• step b) is executed in two steps:
• the second implantation energy is greater than 90% of the first implantation energy, the dose of the first implantation of species and the dose of the second implantation of species are complementary over any the extent of the zone of weakness, the nonuniformity of the dose of the first implantation of species and the nonuniformity of the dose of the second implantation of species being adapted to generate the thickness profile of the layer useful to the outcome of step d) fracture.
• the species implanted during the first implantation and the second implantation comprise hydrogen ions.
• a dielectric layer is formed on the first surface of the donor substrate before step b).
• the dielectric layer comprises at least one of the following materials: silicon oxide, silicon nitride
• the donor substrate comprises at least one of the following materials: silicon, germanium, germanium silicon alloy.
• FIG. 1 is a schematic representation of a method of manufacturing a composite structure according to the known techniques of the prior art
• FIGS. 2 and 3 are diagrammatic representations of a method of manufacturing a composite structure according to the invention
• FIGS. 4a and 4b are schematic representations of an implantation step and a fracture step according to the invention
• FIG. 5 represents a thickness profile of a useful layer according to a diameter obtained after the fracture step according to the invention
• FIG. 6 represents a thickness profile of a useful layer according to a diameter obtained after the fracture step according to the invention.
• Figures 2 and 3 schematically illustrate a method of manufacturing a composite structure.
• Step a) of the method of manufacturing the composite structure comprises providing a donor substrate 10 comprising a first surface 20 and a support substrate 30.
• the donor substrate 10 provided in step a) may comprise one of the materials chosen from: silicon, germanium, germanium silicon alloy.
• the support substrate 30 provided in step a) may consist of all the materials commonly used in the microelectronics, optics, optoelectronics and photovoltaics industry.
• the support substrate 30 comprises at least one of the materials selected from the following group: silicon, silicon carbide, silicon germanium, glass, a ceramic, a metal alloy.
• a dielectric layer 53 may be formed on the first surface 20 of the donor substrate 10 between step a) and step b).
• the dielectric layer 53 may comprise at least one of the following materials: silicon oxide, silicon nitride.
• the dielectric layer 53 may be formed by thermal oxidation of a donor substrate 10, the donor substrate 10 comprising silicon.
• the thermal oxidation can be carried out at a temperature between 800 ° -1100 ° C under an oxidizing atmosphere.
• the thermal oxidation of a donor substrate 10 comprising silicon at a temperature of 800 ° C., under an oxygen atmosphere, makes it possible to to form a layer of silicon oxide.
• Low pressure chemical vapor deposition (“Low Pressure Chemical Vapor Deposition") and Plasma Enhanced Chemical Vapor Deposition techniques are also techniques. of choice for forming the dielectric layer 53 comprising silicon oxide or silicon nitride.
• Step b) of the method of manufacturing the composite structure comprises the formation of a weakening zone 40 in the donor substrate 10.
• the weakening zone 40 delimits with the first surface 20 of the donor substrate 10, a useful layer 50.
• the useful layer 50 is intended to be transferred onto the support substrate 30.
• the weakening zone 40 is formed by implantation of at least one of the species chosen from: hydrogen ions, helium ions. The formation of the weakening zone 40 will be detailed later in the description of the different embodiments.
• Step b) is then followed by a step c) comprising the assembly of the support substrate 30 and the donor substrate 10.
• the assembly may, for example be performed by molecular bonding.
• the assembly step can be carried out by bringing the first surface 20 of the donor substrate into contact with the support substrate 30.
• the assembly step can be performed by contacting the dielectric layer 53 and the support substrate 30.
• Step c) is followed by a step d) of fracture of the donor substrate 30 according to the zone of weakness.
• the useful layer 50 is transferred onto the support substrate 30.
• the dielectric layer 53 has been formed on the first surface 20 of the donor substrate 10, and at the end of FIG. d) fracture step, the useful layer 50 and the dielectric layer 53 are transferred on the support substrate 30.
• the step d) fracture can be performed by a heat treatment at a temperature between 300-500 ° C for a period of between 30 minutes and 24 hours.
• Step d) is followed by a step e) of thinning of the useful layer 50.
• the thinning of the useful layer 50 leads to a thinned useful layer 51. Thinning consumes a non-uniform thickness of the useful layer 50.
• Thinning of the useful layer 50 is advantageously carried out by a sacrificial oxidation step. It is a surface treatment that aims to create an oxide layer 52 on the surface and in the upper part of the useful layer 50.
• the oxidation of a useful layer comprising silicon is thus generally practiced between 800-1000 ° C.
• This process may use in particular water vapor (this is called wet oxidation), or even dioxygen (this is called dry oxidation).
• the corresponding reactions are:
• the wet oxidation is faster but makes it possible to obtain an oxide of a quality lower than that obtained by the dry oxidation.
• the oxidizing gas may also contain a few percent of hydrochloric acid (HCI) to remove any metal ions that may be present.
• HCI hydrochloric acid
• the oxide layer 52 is formed both by a consumption of the useful layer 50 and by the oxygen supplied by the ambient gas.
• the oxidation time is generally between a few minutes and a few hours.
• the overall thickness of the oxide layer 52 formed is generally between 50 and 500 nm, typically between 100 and 400 nm.
• the thermal oxidation of silicon is often practiced using furnaces comprising one or more tubes, in which the structures composites to be treated are loaded.
• furnaces comprising one or more tubes, in which the structures composites to be treated are loaded.
• the oxidation is more uniform if it is performed in vertical tube furnaces, in which the composite structures are placed horizontally, one below the other.
• the thickness of the oxide layer 52 is not uniform throughout its entire extent
• an oxide layer 52 whose thickness in its central portion is of the order of 1500 ⁇ will have a thickness in its part peripheral ring of the order of 1485 ⁇ and such a layer whose thickness in its central portion is of the order of 500 ⁇ will have a thickness in its peripheral annular portion of the order of 485 ⁇ .
• Such variations in thickness can be observed for example using an ellipsometer.
• the removal of the oxide layer 52 or "sacrificial deoxidation" is a generally wet etching.
• the agent providing the chemical etching is based on hydrofluoric acid (HF). After the removal of the silicon oxide layer 52, a thinned useful layer 51 made of silicon is obtained.
• HF hydrofluoric acid
• step b) of formation of the embrittlement zone 40 there is for example the partial pressure and the flow of the various gases injected during the oxidation, the possible temperature ramp during oxidation (at the origin of a possible temperature gradient between the edge and the center of the plates) or the position in the furnace.
• Step b) is executed so that the useful layer 50 transferred on the support substrate 20 has a profile of thickness at the end of step d), said thickness profile being adapted to compensate, at least in part, the non-uniformity of consumption of the useful layer 50 during step e), the thinned useful layer 51 being of substantially uniform thickness at the end of all the steps.
• the thickness profile of the useful layer 50, at the end of the fracture step d), is adapted to compensate for the nonuniformity of a sacrificial oxidation step performed in step e).
• the thinned useful layer 51 has a substantially constant thickness over its extent.
• the formation of the weakening zone 40 is carried out by implantation of at least one of the species chosen from: hydrogen ions, helium ions.
• the total dose of the implanted species is non-uniform over the extent of the embrittlement zone 40, and the nonuniformity of the dose of the implanted species is adapted to generate the non-uniform thickness profile of the useful layer 50 at the end of step d) fracture.
• implanted dose of species is meant the amount of implanted species per unit area of embrittlement zone 40.
• the dose of implanted species is measured in atoms per cm 2 .
• the implantation step is advantageously performed by single-implant implant equipment ("Single wafer implant" according to English terminology).
• Single wafer implant In contrast to batch wafer implant equipment, an equipment implantation mono substrate allows to implement a non-uniform dose of species throughout the extent of the weakening zone 40.
• the thickness profile of the useful layer 50 at the end of the fracture step depends on the uniformity of the dose of species implanted over the entire extent of the weakening zone 40.
• a region A of the weakened zone 40 has an overdose of implanted species with respect to the remainder of the embrittlement zone 40.
• the portion 54 of the useful layer 50 inscribed in said region A in step b), will present, at the end of step d), a greater thickness than the rest of the useful layer 50.
• FIG. 5 illustrates the thickness profile of a transferred silicon layer on a support substrate.
• the implantation conditions are as follows:
• the useful silicon layer 50 has a greater thickness in the center than in its annular peripheral zone.
• the thickness profile of the useful layer is then called curved profile.
• the oxide layer 52 formed during the thinning step e) has a curved thickness profile, it is advantageous to implant a larger dose of species in the central part of the zone. embrittlement (40) and less important towards the annular periphery of the weakening zone (40).
• the dose of species implanted in the central part of the weakening zone 40 may be greater between 2 to 9%, preferably between 3 and 6%, at the dose of species implanted in the annular periphery of the weakening zone.
• the thinned useful layer 51 will have an improved thickness uniformity compared to the state of the art. Improved uniformity of thickness means lower thickness variations.
• the oxide layer 52, formed during the thinning step e) has a profile of thickness in a bowl
• the dose of species implanted in the annular periphery of the weakening zone 40 may be greater between 2 to 9%, preferably between 3 and 6%, at the dose of species implanted in the central part of the weakening zone 40.
• the thinned useful layer 51 will have an improved uniformity of thickness compared with the state of the art. Improved uniformity of thickness means lower thickness variations.
• the dose of hydrogen ions implanted in the weakening zone 40 is constant over the entire extent of the embrittlement zone 40, and the dose of implanted helium ions is non-uniform over the extent of the zone.
• the thickness profile of the useful layer is conditioned by the non-uniformity of dose of the implanted helium ions.
• step b) is executed in two steps: - First implantation of species, according to a first implantation energy, the dose of the first implantation of species being non-uniform over the extent of the weakening zone 40
• the second implantation energy is greater than 90% of the first implantation energy.
• the dose of the first implantation of species and the dose of the second implantation of species are complementary over the whole extent of the weakening zone 40.
• the nonuniformity of the dose of the first implantation of species and the nonuniformity the dose of the second species implantation are adapted to generate the thickness profile of the useful layer 50 at the end of step d) of fracture.
• the dose of implanted species is measured in atoms per cm 2 .
• the implantation step is advantageously performed by single-implant implant equipment ("Single wafer implant" according to English terminology).
• Single wafer implant In contrast to batch wafer implant equipment, a single substrate implantation equipment allows to implant a non-uniform dose of species over the entire extent of the weakening zone. .
• the first implantation is an implantation of hydrogen ions with an implantation energy equal to 24.07 keV.
• the dose of hydrogen ions implanted during the first implantation is equal to about 1 ⁇ 10 16 atoms / cm 2 on a central part of the embrittlement zone 40 of diameter 200 mm, and about 0.5 ⁇ 10 16 to 0.6 ⁇ 10 16 atoms. / cm 2 over the rest of the weakening zone 40.
• the second implantation is an implantation of hydrogen ions at an implantation energy equal to 23.08 keV.
• the dose of hydrogen ion during the second implantation is equal to 0.5 ⁇ 10 16 to 0.6 ⁇ 10 16 atoms / cm 2 on a central portion of the weakening zone 40 of 200mnn diameter, and around 1 x 10 16 atoms / cm 2 over the rest of the weakening zone 40. It can be seen then that after the fracture step d), as represented in FIG. 6, the useful layer 52 in silicon has a smaller thickness in the center than in its annular peripheral zone. The thickness profile of the useful layer is then called a cup profile.
• the nonuniformity of step e) thinning can be determined prior to the implementation of the method according to the invention.
• a thinning step e) performed by sacrificial oxidation this may consist of thermally oxidizing a donor substrate 10 or a useful layer 50, and measuring the thickness profile thus formed with a layer thickness measuring equipment, for example an ellipsometer. Knowing the thickness profile of the oxide layer formed during the thinning step, then makes it possible to adjust the weakening zone forming step for the production of composite structures by volume.
• thermal oxidation furnaces have a relatively good thermal stability today. Therefore, a repeated thermal oxidation step will produce oxide layers still having substantially the same thickness profile.
• the method according to the present invention will then be advantageously used for the volume production of composite structures of silicon-on-insulator type.
• the process according to the invention makes it possible to manufacture composite structures, and more particularly silicon on insulator structures, for which the thinned-on useful layer 51 has reduced variations in thicknesses compared with the state of the art. .

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• 2013
  • 2013-06-28 FR FR1301528A patent/FR3007891B1/fr active Active
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