WO2014196095A1 - 酸化物結晶薄膜の製造方法 - Google Patents
酸化物結晶薄膜の製造方法 Download PDFInfo
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- WO2014196095A1 WO2014196095A1 PCT/JP2013/080451 JP2013080451W WO2014196095A1 WO 2014196095 A1 WO2014196095 A1 WO 2014196095A1 JP 2013080451 W JP2013080451 W JP 2013080451W WO 2014196095 A1 WO2014196095 A1 WO 2014196095A1
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- raw material
- thin film
- film formation
- gallium
- film
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- 239000010409 thin film Substances 0.000 title claims abstract description 63
- 239000013078 crystal Substances 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000010408 film Substances 0.000 claims abstract description 130
- 239000002994 raw material Substances 0.000 claims abstract description 93
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 89
- 150000002259 gallium compounds Chemical class 0.000 claims abstract description 27
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims abstract description 25
- 239000012159 carrier gas Substances 0.000 claims abstract description 23
- 150000002472 indium compounds Chemical class 0.000 claims abstract description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 22
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims abstract description 21
- UVLYPUPIDJLUCM-UHFFFAOYSA-N indium;hydrate Chemical compound O.[In] UVLYPUPIDJLUCM-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 30
- 239000010419 fine particle Substances 0.000 claims description 28
- 239000010431 corundum Substances 0.000 claims description 20
- 229910052593 corundum Inorganic materials 0.000 claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 125000002524 organometallic group Chemical group 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 6
- DWRNSCDYNYYYHT-UHFFFAOYSA-K gallium(iii) iodide Chemical compound I[Ga](I)I DWRNSCDYNYYYHT-UHFFFAOYSA-K 0.000 claims description 5
- RMUKCGUDVKEQPL-UHFFFAOYSA-K triiodoindigane Chemical compound I[In](I)I RMUKCGUDVKEQPL-UHFFFAOYSA-K 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 abstract description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 24
- 239000012535 impurity Substances 0.000 abstract description 24
- 230000009467 reduction Effects 0.000 abstract description 6
- 239000011859 microparticle Substances 0.000 abstract 3
- 230000001131 transforming effect Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 47
- 239000000758 substrate Substances 0.000 description 28
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 17
- 229910001195 gallium oxide Inorganic materials 0.000 description 17
- 239000012071 phase Substances 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 12
- 239000003595 mist Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- ZVYYAYJIGYODSD-LNTINUHCSA-K (z)-4-bis[[(z)-4-oxopent-2-en-2-yl]oxy]gallanyloxypent-3-en-2-one Chemical compound [Ga+3].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O ZVYYAYJIGYODSD-LNTINUHCSA-K 0.000 description 8
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 238000002474 experimental method Methods 0.000 description 7
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 7
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- SRVXDMYFQIODQI-UHFFFAOYSA-K gallium(iii) bromide Chemical compound Br[Ga](Br)Br SRVXDMYFQIODQI-UHFFFAOYSA-K 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- JKNHZOAONLKYQL-UHFFFAOYSA-K tribromoindigane Chemical compound Br[In](Br)Br JKNHZOAONLKYQL-UHFFFAOYSA-K 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 2
- CECABOMBVQNBEC-UHFFFAOYSA-K aluminium iodide Chemical compound I[Al](I)I CECABOMBVQNBEC-UHFFFAOYSA-K 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 150000001649 bromium compounds Chemical class 0.000 description 2
- 150000004696 coordination complex Chemical class 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- SKWCWFYBFZIXHE-UHFFFAOYSA-K indium acetylacetonate Chemical compound CC(=O)C=C(C)O[In](OC(C)=CC(C)=O)OC(C)=CC(C)=O SKWCWFYBFZIXHE-UHFFFAOYSA-K 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 150000004694 iodide salts Chemical class 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- -1 oxygen ions Chemical class 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- PUGUQINMNYINPK-UHFFFAOYSA-N tert-butyl 4-(2-chloroacetyl)piperazine-1-carboxylate Chemical compound CC(C)(C)OC(=O)N1CCN(C(=O)CCl)CC1 PUGUQINMNYINPK-UHFFFAOYSA-N 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- XBIUWALDKXACEA-UHFFFAOYSA-N 3-[bis(2,4-dioxopentan-3-yl)alumanyl]pentane-2,4-dione Chemical compound CC(=O)C(C(C)=O)[Al](C(C(C)=O)C(C)=O)C(C(C)=O)C(C)=O XBIUWALDKXACEA-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000005349 anion exchange Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Inorganic materials [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 1
- 229910000373 gallium sulfate Inorganic materials 0.000 description 1
- SBDRYJMIQMDXRH-UHFFFAOYSA-N gallium;sulfuric acid Chemical compound [Ga].OS(O)(=O)=O SBDRYJMIQMDXRH-UHFFFAOYSA-N 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
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- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/729—Growing single crystal, e.g. epitaxy, bulk
Definitions
- the present invention relates to a method for producing an oxide crystal thin film.
- Patent Document 1 As a method for forming a highly crystalline gallium oxide thin film on a film formation sample, a film formation method using water fine particles such as a mist CVD method is known (Patent Document 1).
- a raw material aqueous solution is prepared by dissolving a gallium compound such as gallium acetylacetonate in an acid such as hydrochloric acid, and the raw material aqueous solution is formed into fine particles.
- a gallium oxide thin film with high crystallinity is formed on the film formation sample by supplying the film formation surface of the film formation sample and reacting the raw material mist to form a thin film on the film formation surface.
- the gallium oxide thin film having high crystallinity can be obtained also by the method described in Patent Document 1, when the present inventors created a gallium oxide thin film by the method of Patent Document 1, unintentional carbon impurities are present in the thin film. It was found that it was contained. Since carbon impurities can also contribute as a dopant, the presence of unintended carbon impurities makes it difficult to control the doping concentration. In addition, the acetylacetonate complex is poorly soluble in water, and even if the solution is acidified, it is difficult to increase the concentration of the raw material solution, so the approach of increasing the concentration of the raw material cannot be taken in high-speed film formation. . Furthermore, water-based CVD such as the mist CVD method is said to be inferior to other CVD methods in raw material efficiency, and improvement of raw material efficiency is said to be a problem for practical use.
- Non-Patent Document 1 a film formation using gallium chloride was attempted. Since gallium chloride has excellent solubility in water in addition to containing no carbon, the use of gallium chloride is expected to solve the above problems. It was concluded that acetylacetonate and water are essential for film formation.
- the most stable phase of indium oxide is a bixbite type, and it is also difficult to obtain a corundum type single phase, and it is difficult to grow ⁇ -type In 2 O 3 crystals with good reproducibility.
- the present invention has been made in view of such circumstances, and provides a thin film manufacturing method capable of achieving both a reduction in carbon impurity concentration and a high film formation rate, and enabling the creation of a stable crystal structure. It is to provide.
- the raw material fine particles generated by atomizing a raw material solution containing at least one of a gallium compound and an indium compound and water are supplied to the film forming chamber by the carrier gas, and are disposed in the film forming chamber.
- a method for producing an oxide crystal thin film comprising a step of forming an oxide crystal thin film on a film sample, wherein at least one of the gallium compound and the indium compound is bromide or iodide.
- the present inventors have performed film formation using various gallium compounds, and in the case of film formation using gallium bromide and gallium iodide. In addition to the extremely low carbon impurity concentration, it was found that the film formation rate was significantly higher than that when gallium acetylacetonate was used.
- the raw material solution contains bromide or gallium iodide.
- the raw material solution contains bromide or indium iodide.
- the thin film has a crystal oriented in a certain crystal axis.
- the thin film has a corundum structure.
- the film formation sample and the thin film have a corundum structure.
- the raw material solution contains an organometallic complex of aluminum.
- the raw material fine particles are generated by separately micronizing a first raw material solution containing at least one of a gallium compound and an indium compound and water, and a second raw material solution containing an organometallic complex of aluminum and water.
- the first raw material fine particles and the second raw material fine particles are included, and the first and second raw material fine particles are mixed before the film formation chamber or in the film formation chamber.
- the raw material solution contains a gallium compound, and the thin film is a crystal having a ⁇ -gallia structure.
- the structural example of the semiconductor device or crystal body which can be manufactured with the manufacturing method of the oxide crystal thin film of one Embodiment of this invention is shown. It is a block diagram of the mist CVD apparatus used in the Example of this invention.
- a method for producing an oxide crystal thin film in which raw material fine particles generated by atomizing a raw material solution containing at least one of a gallium compound and an indium compound and water are supplied to a film forming chamber by a carrier gas.
- the manufacturing method supplies raw material fine particles generated by atomizing a raw material solution containing at least one of a gallium compound and an indium compound and water to a film forming chamber by a carrier gas, and supplies the raw material fine particles to the film forming chamber.
- the raw material solution can be prepared by dissolving at least one of a gallium compound and an indium compound in water.
- gallium compounds and indium compounds there are a great many types of gallium compounds and indium compounds.
- bromides or iodides of these compounds are used. This is because when bromide or iodide is used, the carbon impurity concentration in the thin film to be formed can be reduced while achieving a high film formation rate, as shown in the examples described later.
- a thin film having better crystallinity than when gallium chloride is used can be formed.
- the concentration of the gallium compound and the indium compound in the raw material solution is not particularly limited, but is, for example, 0.001 to 10 mol / L, preferably 0.005 to 2 mol / L. This concentration is 0.001, 0.005, 0.01, 0.02, 0.03, 0.04, 0.05, 0.06, 0.07, 0.08, 0.09, 0.0. It is 1, 0.2, 0.5, 1, 2, 5, 10 mol / L, and may be within a range between any two of the numerical values exemplified here.
- the raw material solution may contain only one of the gallium compound and the indium compound, or may contain both. Moreover, only one of the bromide and iodide of these compounds may be contained, and both may be contained. Furthermore, the raw material solution may contain a gallium compound or an indium compound other than bromide and iodide, and may contain a metal compound other than the gallium compound and the indium compound. However, from the viewpoint of reducing the carbon impurity concentration, the metal compound included in the raw material solution preferably has no carbon atom.
- an aluminum atom is included in the thin film as in the case of, for example, an organometallic complex such as a beta diketonate complex (eg, acetylacetonate complex) is used for aluminum, and a compound other than a halide is used. May be used.
- the solvent of the raw material solution is preferably water (preferably ultrapure water), and preferably does not contain an organic solvent.
- a dopant compound can be added to the raw material solution, whereby conductivity can be imparted to the formed thin film, which can be used as a semiconductor layer.
- the reaction solution may contain a compound other than the compounds described here, but preferably does not contain an organic compound.
- carbon is used as a doping element, for example, a small amount of an organic acid (eg, acetic acid) can be added.
- a first raw material solution containing at least one of a gallium compound and an indium compound and water, an organometallic complex of aluminum A second raw material solution containing water is prepared, and the raw material solution is separately finely divided to produce first raw material fine particles and second raw material fine particles.
- These raw material fine particles are placed in front of the film forming chamber or in the film forming chamber.
- anion exchange reaction proceeds, and gallium acetylacetonate, aluminum bromide, or aluminum iodide is present in the solution.
- the film speed, the raw material efficiency, and the crystallinity are reduced.
- the exchange reaction can be minimized by supplying them as separate liquids and mixing them after atomization.
- the method for producing raw material fine particles by making the raw material solution fine particles is not particularly limited, but a general method is to apply ultrasonic vibration to the raw material solution to form fine particles. Also, in other methods, for example, the raw material fine particles can be generated by atomizing the raw material solution by spraying the raw material solution.
- Carrier gas is, for example, nitrogen, but a gas such as argon, oxygen, ozone, or air may be used.
- the flow rate of the carrier gas is not particularly limited, but is, for example, 0.1 to 50 L / min, preferably 0.5 to 10 L / min. Specifically, this flow rate is, for example, 0.5, 1, 1.5, 2, 2.5, 3, 3.5, 4, 4.5, 5, 5.5, 6, 6.5, 7, 7.5, 8, 8.5, 9, 9.5, 10 L / min, and may be in a range between any two of the numerical values exemplified here.
- Film formation chamber, film formation sample, film formation Raw material fine particles are supplied to the film formation chamber by the carrier gas, and a reaction takes place in the film formation chamber to form a thin film on the film formation sample placed in the film formation chamber. Is done.
- the thin film formed on the film formation sample is a thin film of an oxide crystal (preferably a crystal oriented in a certain crystal axis).
- the film formation chamber is a space in which a thin film is formed, and its configuration and material are not particularly limited.
- the film forming chamber is configured to supply a carrier gas containing raw material fine particles from one end of a quartz tube and to discharge exhaust gas from the other end of the quartz tube as in the embodiment.
- the film formation sample may be arranged so that the film formation surface is horizontal, or may be arranged so as to be inclined at, for example, 45 degrees toward the carrier gas supply side.
- a fine channel method using a channel of several mm or less as a reaction region, or a linear nozzle is provided on the substrate, from which raw material fine particles (and carrier gas) are sprayed in a direction perpendicular to the substrate, and the nozzle is linear
- a linear source method of moving in the vertical direction or a film formation chamber by a method in which a plurality of methods are mixed or derived may be used.
- the film forming chamber is configured such that the inner space can be heated to a desired temperature by, for example, surrounding the film forming chamber with a heater. Further, the film formation chamber may be pressurized or depressurized instead of atmospheric pressure.
- the heating temperature of the film formation chamber during film formation is not particularly limited as long as it is a temperature at which a raw material solute (gallium compound, indium compound, etc.) contained in the raw material solution can be chemically reacted, and is, for example, 300 to 1500 ° C. 400 to 700 ° C. is preferable, and 450 to 550 ° C. is more preferable. If the heating temperature is too low, the reaction rate of the raw material solute will be slow and the film forming rate will be slow, and if the heating temperature is too high, the etching rate of the formed thin film will become large and the film forming rate will be slow. It is.
- the heating temperature is, for example, 300, 350, 400, 450, 500, 550, 600, 700, 800, 900, 1000, 1500 ° C., and a range between any two of the numerical values exemplified here. It may be within.
- the ⁇ phase tends to grow when the film formation temperature is high, conditions such as the concentration of the solution, composition, and flow rate during film formation can be optimized for each temperature when it is desired to obtain an ⁇ phase single phase. is necessary.
- the sample to be deposited is not particularly limited as long as a thin film can be formed, and suitable examples include a substrate having a corundum structure, a ⁇ -type gallium oxide substrate, or a thin film having a corundum structure. It is not limited to.
- a sapphire substrate is an example of a substrate having a corundum structure that can be easily procured. It is preferable because a thin film having a corundum structure (eg, an ⁇ -type gallium oxide thin film or an ⁇ -type indium oxide thin film) is easily formed on a substrate having a corundum structure.
- the film formation sample may not have a corundum structure.
- Preferable examples include a substrate having a hexagonal crystal structure typified by GaN and ZnO, a substrate having a cubic crystal structure typified by YSZ, and a ⁇ -type gallium oxide substrate.
- a thin film of a crystal having a ⁇ -gallia structure eg, ⁇ -type gallium oxide
- ⁇ -type gallium oxide e.g, ⁇ -type gallium oxide
- FIG. 1 shows an example of a semiconductor device or crystal body that can be manufactured by the method of this embodiment.
- the crystalline stress relaxation layer 2, the semiconductor layer 3, the cap layer 4, and the insulating film 5 are formed in this order on the base substrate 1. You may laminate on the base substrate 1 in order from an insulating film.
- the crystalline stress relaxation layer 2 and the cap layer 4 may be omitted if not necessary.
- the base substrate 1 and the semiconductor layer 3 or the semiconductor layer 3 and the insulating film 5 are formed of different materials having a corundum structure, the semiconductor layer 3 and the insulating film 5, the base substrate 1 and the semiconductor layer 3, and the crystallinity
- a structural phase transition prevention layer having a corundum structure may be formed in at least one of the stress relaxation layer 2 and the semiconductor layer 3 and between the cap layer 4 and the insulating film 5.
- the crystal growth temperature for forming the crystalline stress relaxation layer 2, the semiconductor layer 3, the cap layer 4, and the insulating film 5 is higher than the crystal structure transition temperature below the formation layer, a structural phase transition prevention layer is formed.
- the corundum structure from changing to a different crystal structure.
- the formation temperature of the crystalline stress relaxation layer 2 the semiconductor layer 3, the cap layer 4 and the insulating film 5 is lowered in order to prevent the phase transition of the crystal structure, the crystallinity is lowered. Therefore, it is difficult to suppress the change of the crystal structure by lowering the film formation temperature, and the formation of the structural phase transition prevention layer is effective.
- Examples of the base substrate 1 include a sapphire substrate and an ⁇ -type gallium oxide substrate.
- a membrane can be used.
- Crystalline stress relaxation layer reduces sapphire substrate and semiconductor layer
- cap layer reduces varieties of dislocations such as sword dislocations, screw dislocations, and basal plane dislocations due to differences in lattice constants between semiconductor layers and insulating films
- X, Y, and Z are, for example, 0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0, respectively. .1, 1, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2 and the numerical values exemplified here It may be within the range between any two.
- X + Y or X + Y + Z is, for example, 1.5, 1.6, 1.7, 1.8, 1.9, 2, 2.1, 2.2, 2.3, 2.4, 2 .5, and may be within a range between any two of the numerical values exemplified here.
- a layer containing gallium or indium is formed using a gallium compound or a bromide or iodide of an indium compound as in this embodiment, thereby reducing the carbon impurity concentration.
- a high deposition rate can be achieved.
- a semiconductor device When film formation is completed, a semiconductor device can be manufactured by taking out a film formation sample on which a thin film has been formed from a film formation chamber and performing device processes such as ion implantation, etching, and photolithography.
- device processes such as ion implantation, etching, and photolithography.
- a larger amount of thermal energy is applied even when the base substrate is changed or when the film is formed on a substrate having a corundum structure than when the ⁇ -type crystal is formed. By doing so, other crystal structures can be obtained.
- the mist CVD apparatus 19 adjusts the flow rate of a carrier gas sent from the carrier stage 22, a carrier gas source 22 for supplying a carrier gas, and a sample stage 21 on which a deposition target sample 20 such as a base substrate is placed.
- a flow rate adjusting valve 23 a mist generating source 24 for storing a raw material solution 24a, a container 25 for containing water 25a, an ultrasonic transducer 26 attached to the bottom surface of the container 25, and a quartz tube having an inner diameter of 40 mm.
- a film forming chamber 27, and a heater 28 installed around the film forming chamber 27.
- the sample stage 21 is made of quartz, and the surface on which the deposition target sample 20 is placed is inclined 45 degrees from the horizontal plane. Both the film formation chamber 27 and the sample stage 21 are made of quartz, so that impurities derived from the apparatus are prevented from being mixed into the thin film formed on the film formation target sample 20.
- the raw material solution 24a having the concentration shown in Table 1 was prepared by dissolving the raw material solute shown in Table 1 in ultrapure water. This raw material solution 24 a was accommodated in the mist generating source 24.
- acetylacetonate is abbreviated as “acac”.
- a c-plane sapphire substrate with a side of 10 mm and a thickness of 600 ⁇ m is placed on the sample stage 21, and the heater 28 is operated to set the temperature in the film formation chamber 27.
- the flow rate adjusting valve 23 is opened to supply the carrier gas from the carrier gas source 22 into the film forming chamber 27, and the atmosphere in the film forming chamber 27 is sufficiently replaced with the carrier gas. It adjusted to the value shown in. Nitrogen gas was used as the carrier gas.
- the ultrasonic vibrator 26 was vibrated at 2.4 MHz, and the vibration was propagated to the raw material solution 24a through the water 25a, whereby the raw material solution 24a was atomized to generate raw material fine particles.
- the raw material fine particles are introduced into the film forming chamber 27 by the carrier gas, react in the film forming chamber 27, and form a thin film on the film forming sample 20 by the CVD reaction on the film forming surface of the film forming sample 20. Formed.
- Table 1 shows the results of measuring the film formation rate for 1 to 17 and the half-value width of the formed thin film.
- the film formation rate was calculated by dividing the film thickness by the film formation time.
- the FWHM of gallium oxide is the rocking curve FWHM for (0006) diffraction of ⁇ -type gallium oxide.
- the carbon impurity concentration was measured by secondary ion mass spectrometry (SIMS), and the result is shown in the “impurity” column of Table 1.
- the carbon impurity concentration of the evaluation results of “ ⁇ ” was about 1/100 of that of the “ ⁇ ”.
- the method of the present invention (bromide / iodide) not only reduced the impurity concentration compared to the case of using acetylacetonate complex as a raw material, but also under all experimental conditions, the film formation rate, raw material efficiency, crystallinity ( Since the X-ray half width is improved, it is an extremely useful method even in a mass production process.
- the method using chloride or acetylacetonate is affected by process variations such as raw material concentration and film formation temperature, and the ⁇ phase is easily mixed, so ⁇ -type crystals are stable. Difficult to manufacture.
- a single phase of ⁇ -type crystal can be obtained over a wide temperature range and concentration range, so that the yield can be improved.
- ⁇ -type crystals and ⁇ -type crystals can be made separately, and a reduction in carbon impurity concentration and a high film formation rate can be achieved at the same time.
- Base substrate 2 Crystalline stress relaxation layer 3: Semiconductor layer 4: Cap layer 5: Insulating film 19: Mist CVD apparatus 20: Film formation sample 21: Sample stage 22: Carrier gas source 23: Flow control valve 24: Mist generation source 24a: raw material solution 25: mist generation source 25a: water 26: ultrasonic vibrator 27: film formation chamber 28: heater
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Abstract
Description
また、アセチルアセトナート錯体は水への溶解性に乏しく、溶液を酸性にしたとしても、原料液の高濃度化が困難であるため、高速成膜において、原料の高濃度化というアプローチがとれない。さらに、ミストCVD法に代表されるような水系CVDは原料効率が他のCVD法に比べて劣ると言われており、原料効率の向上が実用化の課題だと言われている。
好ましくは、前記原料溶液は、臭化又はヨウ化ガリウムを含む。
好ましくは、前記原料溶液は、臭化又はヨウ化インジウムを含む。
好ましくは、前記薄膜は、ある結晶軸に配向した結晶を有する。
好ましくは、前記薄膜は、コランダム構造を有する。
好ましくは、前記薄膜は、α型InXAlYGaZO3(0≦X≦2、0≦Y≦2、0≦Z≦2、X+Y+Z=1.5~2.5)である。
好ましくは、前記被成膜試料及び前記薄膜は、コランダム構造を有する。
好ましくは、前記原料溶液は、アルミニウムの有機金属錯体を含む。
好ましくは、前記原料微粒子は、ガリウム化合物とインジウム化合物の少なくとも一方と水とを含む第1原料溶液と、アルミニウムの有機金属錯体と水とを含む第2原料溶液を別々に微粒子化して生成される第1原料微粒子と第2原料微粒子を含み、第1及び第2原料微粒子は、前記成膜室の手前又は成膜室内において混合される。
好ましくは、前記原料溶液にガリウム化合物を含み、前記薄膜はβガリア構造を有する結晶である、
この製造方法は、一例では、ガリウム化合物とインジウム化合物の少なくとも一方を含む原料と水とを含む原料溶液を微粒子化して生成される原料微粒子をキャリアガスによって成膜室に供給すると共に前記原料微粒子を前記成膜室内で反応させて前記成膜室内に載置された被成膜試料上に酸化物結晶の薄膜を形成する工程を備え、前記ガリウム化合物とインジウム化合物の少なくとも一方は、臭化物又はヨウ化物である。
以下、各工程について詳細に説明する。
原料溶液は、ガリウム化合物とインジウム化合物の少なくとも一方を水に溶解させることによって作製することができる。ガリウム化合物とインジウム化合物には、非常に多くの種類のものがあるが、本実施形態では、これらの化合物の臭化物又はヨウ化物を用いる。臭化物又はヨウ化物を用いた場合、後述する実施例で示すように、高い成膜速度を達成しつつ、形成される薄膜中の炭素不純物濃度を低減することが可能になるからである。また、臭化物又はヨウ化物を用いることによって、塩化ガリウムを用いた場合よりも結晶性に優れた薄膜を形成することができる。
例えば、アルミニウムとガリウム、アルミニウムとインジウム、又はアルミ、ガリウム、インジウムの混晶膜を形成する場合、ガリウム化合物とインジウム化合物の少なくとも一方と水とを含む第1原料溶液と、アルミニウムの有機金属錯体と水とを含む第2原料溶液を準備し、これらの原料溶液を別々に微粒子化して第1原料微粒子と第2原料微粒子を生成し、これらの原料微粒子を成膜室の手前又は成膜室内において混合することができる。1種類の原料溶液中に有機金属錯体と、臭化物又はヨウ化物を混在させると、アニオン交換反応が進んで、ガリウムアセチルアセトナートや臭化アルミニウム又はヨウ化アルミニウムが溶液中に存在することとなり、成膜速度の低下、原料効率の低下、結晶性の低下が引き起こされる。別々の液で供給し、微粒子化後に混合することで上記交換反応を最小限にすることができる。
原料溶液を微粒子化して原料微粒子を生成する方法は、特に限定されないが、原料溶液に超音波振動を印加して微粒子化する方法が一般的である。また、これ以外の方法でも、例えば、原料溶液を噴霧することによって原料溶液を微粒子化することによっても原料微粒子を生成することができる。
キャリアガスは、例えば窒素であるが、アルゴン、酸素、オゾン、空気などのガスを用いてもよい。また、キャリアガスの流量は、特に限定されないが、例えば、0.1~50L/minであり、好ましくは0.5~10L/minである。この流量は、具体的には例えば、0.5、1、1.5、2、2.5、3、3.5、4、4.5、5、5.5、6、6.5、7、7.5、8、8.5、9、9.5、10L/minであり、ここで例示した数値の何れか2つの間の範囲内であってもよい。
原料微粒子は、キャリアガスによって成膜室に供給され、成膜室において反応が起こって成膜室内に載置された被成膜試料上に薄膜が形成される。被成膜試料上に形成される薄膜は、酸化物結晶(好ましくはある結晶軸に配向した結晶)の薄膜である。
成膜室は、薄膜形成が行われる空間であり、その構成や材料は特に限定されない。成膜室は、一例では、実施例のように石英管の一端から原料微粒子を含むキャリアガスを供給し、石英管の他端から排ガスを排出する構成である。この構成の場合、被成膜試料は、成膜面が水平になるように配置してもよく、キャリアガスの供給側に向けて例えば45度に傾斜するように配置してもよい。また、数mm以下のチャネルを反応領域として利用するファインチャネル法や、基板上に直線状のノズルを設け、ここから基板に垂直方向に原料微粒子(およびキャリアガス)を吹き付け、さらにノズルを直線状の出口とは垂直方向に移動させるというリニアソース法や、複数の方式を混合した、あるいは派生させた方式による成膜室を利用してもよい。ファインチャネル法では、均質な薄膜作製と原料の利用効率の向上が可能であるし、リニアソース法では、将来の大面積基板およびロールツーロールでの連続成膜が可能である。成膜室は、例えば成膜室の周囲をヒータで取り囲む等によって内部空間を所望温度に加熱できる構成になっている。また、成膜室は、大気圧ではなく加圧や減圧をしてもよい。
1-1.ミストCVD装置
まず、図2を用いて、本実施例で用いたミストCVD装置19を説明する。ミストCVD装置19は、下地基板等の被成膜試料20を載置する試料台21と、キャリアガスを供給するキャリアガス源22と、キャリアガス源22から送り出されるキャリアガスの流量を調節するための流量調節弁23と、原料溶液24aが収容されるミスト発生源24と、水25aが入れられる容器25と、容器25の底面に取り付けられた超音波振動子26と、内径40mmの石英管からなる成膜室27と、成膜室27の周辺部に設置されたヒータ28を備えている。試料台21は、石英からなり、被成膜試料20を載置する面が水平面から45度に傾斜している。成膜室27と試料台21をどちらも石英で作製することにより、被成膜試料20上に形成される薄膜内に装置由来の不純物が混入することを抑制している。
表1に示す原料溶質を超純水中に溶解させることによって表1に示す濃度の原料溶液24aを作製した。この原料溶液24aをミスト発生源24内に収容した。なお、表1中アセチルアセトナートは「acac」と省略表記した
次に、被成膜試料20として、1辺が10mmの正方形で厚さ600μmのc面サファイア基板を試料台21上に設置させ、ヒータ28を作動させて成膜室27内の温度を表1に示す温度にまで昇温させた。次に、流量調節弁23を開いてキャリアガス源22からキャリアガスを成膜室27内に供給し、成膜室27の雰囲気をキャリアガスで十分に置換した後、キャリアガスの流量を表1に示す値に調節した。キャリアガスとしては、窒素ガスを用いた。
次に、超音波振動子26を2.4MHzで振動させ、その振動を水25aを通じて原料溶液24aに伝播させることによって原料溶液24aを微粒子化させて原料微粒子を生成した。
この原料微粒子が、キャリアガスによって成膜室27内に導入され、成膜室27内で反応して、被成膜試料20の成膜面でのCVD反応によって被成膜試料20上に薄膜を形成した。
表1の実験No.1~17についての成膜速度と、形成された薄膜の半値幅を測定した結果を表1に示す。成膜速度は、膜厚を成膜時間で割って算出した。酸化ガリウムの半値幅は、α型酸化ガリウムの(0006)回折に対するロッキングカーブ半値幅である。また、二次イオン質量分析法(SIMS)によって炭素不純物濃度を測定し、表1の「不純物」の列に結果を示した。評価結果が○のものの炭素不純物濃度は、×のものに比べて1/100程度であった。
アルミニウムアセチルアセトナートを塩酸中に溶解させて得られた原料溶液を用いた場合(No.1)、炭素不純物濃度が非常に大きかった。
ハロゲン化アルミニウム(No.2~4)を用いた場合、成膜がうまくいかなかった。
ガリウムアセチルアセトナートを塩酸中に溶解させて得られた原料溶液を用いた場合(No.5)、炭素不純物濃度が非常に大きかった。
ガリウムアセチルアセトナートをギ酸中に溶解させて得られた原料溶液を用いた場合(No.6)、成膜速度が非常に小さかった。
ガリウムの硫酸塩又は硝酸塩を用いた場合(No.7~8)、成膜ができなかった。
塩化ガリウムを用いた場合(No.9~10)には、成膜速度がガリウムアセチルアセトナートを用いた場合よりも大幅に小さくなった。また、半値幅も大きかった。なお、非特許文献1では成膜できなかったにも関わらず、実施例9~10では低速ながら成膜が成功した理由としては、キャリアガスの流速や、原料溶液の濃度の違いが関係していると推測している。
臭化ガリウムを用いた場合(No.11)には、成膜速度が極めて大きく、半値幅も非常に小さかった。
濃度が比較的低いヨウ化ガリウムを用いた場合(No.12)には、成膜速度及び濃度は、ガリウムアセチルアセトナートを用いた場合と同程度であり、不純物濃度が低かった。
濃度が比較的高いヨウ化ガリウムを用いた場合(No.13)には、成膜速度が非常に高かった。
塩化インジウムを用いた場合(No.15)は、成膜がうまくいかなかった。
臭化インジウム及びヨウ化インジウムを用いた場合(No.16~17)には、成膜速度が非常に大きく、臭化インジウムを用いた場合(No.16)に、成膜速度が特に大きかった。なお、インジウムアセチルアセトナートと同一濃度でも実験を行ったが、その場合、成膜速度が高すぎたため、異常成長を引き起こし結晶性が損なわれた。そのため原料濃度を下げて実験を行った。
表2~表4中に明記されている条件で実験を行った。キャリアガスには窒素を用い、流量は3L/minとした。
結晶相の同定は薄膜用XRD回折装置を用いた。表中の表記内容について、「α単」はα-Ga2O3由来のピークのみが観測された条件、「β単」はβ-Ga2O3ピークのみが観測された条件、「β混」はα-Ga2O3、β-Ga2O3両者のピークが観測され、単相が得られていない条件を意味する。
表3~4からもわかるように、塩化物又はアセチルアセトナートを用いた方法では、原料濃度、成膜温度などのプロセスのばらつきに影響を受け、β相が混じりやすいためα型の結晶を安定的に製造することが困難であった。しかし、本発明のように臭化物を用いた場合には広範囲にわたる温度域・濃度域にわたってα型結晶の単相が得られるため、歩留まりの向上が可能となる。
このように、本発明を利用することでα型結晶とβ型結晶を作り分けることができるとともに、炭素不純物濃度の低減と、高い成膜速度を両立させることができる。
2:結晶性応力緩和層
3:半導体層
4:キャップ層
5:絶縁膜
19:ミストCVD装置
20:被成膜試料
21:試料台
22:キャリアガス源
23:流量調節弁
24:ミスト発生源
24a:原料溶液
25:ミスト発生源
25a :水
26:超音波振動子
27:成膜室
28:ヒータ
Claims (10)
- ガリウム化合物とインジウム化合物の少なくとも一方と水とを含む原料溶液を微粒子化して生成される原料微粒子をキャリアガスによって成膜室に供給して前記成膜室内配置された被成膜試料上に酸化物結晶薄膜を形成する工程を備え、前記ガリウム化合物とインジウム化合物の少なくとも一方は、臭化物又はヨウ化物である、酸化物結晶薄膜の製造方法。
- 前記原料溶液は、臭化又はヨウ化ガリウムを含む、請求項1に記載の方法。
- 前記原料溶液は、臭化又はヨウ化インジウムを含む、請求項1又は2に記載の方法。
- 前記薄膜は、ある結晶軸に配向した結晶を有する、請求項1~3の何れか1つに記載の方法。
- 前記薄膜は、コランダム構造を有する、請求項1~4の何れか1つに記載の方法。
- 前記薄膜は、α型InXAlYGaZO3(0≦X≦2、0≦Y≦2、0≦Z≦2、X+Y+Z=1.5~2.5)である請求項5に記載の方法。
- 前記被成膜試料及び前記薄膜は、コランダム構造を有する、請求項1~6の何れか1つに記載の方法。
- 前記原料溶液は、アルミニウムの有機金属錯体を含む、請求項1~7の何れか1つに記載の方法。
- 前記原料微粒子は、ガリウム化合物とインジウム化合物の少なくとも一方と水とを含む第1原料溶液と、アルミニウムの有機金属錯体と水とを含む第2原料溶液を別々に微粒子化して生成される第1原料微粒子と第2原料微粒子を含み、
第1及び第2原料微粒子は、前記成膜室の手前又は成膜室内において混合される、請求項1~8の何れか1つに記載の方法。 - 前記原料溶液にガリウム化合物を含み、前記薄膜はβガリア構造を有する結晶である、請求項1~4の何れか1つに記載の方法。
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KR102598375B1 (ko) | 2018-08-01 | 2023-11-06 | 이데미쓰 고산 가부시키가이샤 | 결정 구조 화합물, 산화물 소결체, 스퍼터링 타깃, 결정질 산화물 박막, 아모르퍼스 산화물 박막, 박막 트랜지스터, 및 전자 기기 |
Also Published As
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US20220049348A1 (en) | 2022-02-17 |
US10202685B2 (en) | 2019-02-12 |
TWI490368B (zh) | 2015-07-01 |
EP2865789A1 (en) | 2015-04-29 |
JP2014234337A (ja) | 2014-12-15 |
CN104736747A (zh) | 2015-06-24 |
US20190112703A1 (en) | 2019-04-18 |
EP2865789B1 (en) | 2017-05-17 |
US20150225843A1 (en) | 2015-08-13 |
JP5397794B1 (ja) | 2014-01-22 |
KR101564929B1 (ko) | 2015-11-02 |
CN104736747B (zh) | 2018-04-20 |
EP2865789A4 (en) | 2015-09-09 |
TW201447035A (zh) | 2014-12-16 |
KR20150008037A (ko) | 2015-01-21 |
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