WO2021065940A1 - 積層構造体および半導体装置 - Google Patents
積層構造体および半導体装置 Download PDFInfo
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- WO2021065940A1 WO2021065940A1 PCT/JP2020/036990 JP2020036990W WO2021065940A1 WO 2021065940 A1 WO2021065940 A1 WO 2021065940A1 JP 2020036990 W JP2020036990 W JP 2020036990W WO 2021065940 A1 WO2021065940 A1 WO 2021065940A1
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Definitions
- the present invention relates to a laminated structure useful for a semiconductor device.
- the dislocation density of the crystal film is preferably 1.0 ⁇ 10 6 / cm 2 or less.
- the "dislocation density” refers to the dislocation density obtained from the number of dislocations per unit area observed from a plane or cross-sectional TEM image.
- the crystalline metal oxide is not particularly limited, and for example, one or more metals selected from aluminum, gallium, indium, iron, chromium, vanadium, titanium, rhodium, nickel, cobalt, iridium and the like can be used. Suitable examples include metal oxides containing.
- the crystalline metal oxide preferably contains one or more elements selected from indium, aluminum and gallium, more preferably at least indium and / and gallium.
- the "main component” means that the crystalline metal oxide is contained in an atomic ratio of preferably 50% or more, more preferably 70% or more, still more preferably 90% or more with respect to all the components of the crystal film. Means that it may be 100%.
- the crystal film may be conductive or insulating, but in the present invention, it is preferably a semiconductor film, and the crystal film may contain a dopant or the like. Further, the crystal film preferably contains two or more lateral crystal growth layers.
- the main surface of the crystal film is not particularly limited, but in the present invention, it is preferably r-plane, S-plane or m-plane, and more preferably r-plane or S-plane.
- a metal source containing a metal is gasified to obtain a metal-containing raw material gas, and then the metal-containing raw material gas and an oxygen-containing raw material.
- the reactive gas is supplied onto the substrate by using a substrate having concave or convex portions formed on the surface thereof. The film formation may be performed under the flow of the reactive gas.
- the temperature is most preferably 400 ° C. to 700 ° C.
- the metal-containing raw material gas is not particularly limited as long as it is a gas containing the metal of the metal source.
- the metal-containing raw material gas include halides (fluoride, chloride, bromide, iodide, etc.) of the metal.
- the reactive gas is a halogen gas (for example, fluorine gas, chlorine gas, bromine gas, iodine gas, etc.), hydrogen halide gas (for example, hydrofluoric acid gas, hydrochloric acid gas, hydrogen bromide gas, hydrogen bromide gas, etc.) (Hydrogen bromide gas, etc.), hydrogen gas, or a mixed gas of two or more of these, and the like, preferably containing hydrogen halide gas, and most preferably containing hydrogen chloride.
- the metal-containing raw material gas, the oxygen-containing raw material gas, and the reactive gas may contain a carrier gas.
- the carrier gas include an inert gas such as nitrogen and argon.
- the dopant-containing raw material gas preferably has the dopant in the form of a compound (for example, a halide, an oxide, etc.), and more preferably in the form of a halide.
- the partial pressure of the dopant-containing raw material gas is not particularly limited, but in the present invention, it is preferably 1 ⁇ 10 -7 times to 0.1 times the partial pressure of the metal-containing raw material gas, and is 2.5 ⁇ . More preferably, it is 10-6 times to 7.5 ⁇ 10-2 times. In the present invention, it is preferable to supply the dopant-containing raw material gas together with the reactive gas onto the substrate.
- the means for forming the convex portion may be a known means, for example, a known patterning processing means such as photolithography, electron beam lithography, laser patterning, and subsequent etching (for example, dry etching or wet etching). Can be mentioned.
- the convex portion is preferably striped or dot-shaped, and more preferably dot-shaped.
- the dot shape or the stripe shape may be the shape of the opening of the convex portion.
- the crystal substrate is a PSS (Patterned Sapphire Substrate) substrate.
- the pattern shape of the PSS substrate is not particularly limited and may be a known pattern shape.
- FIG. 19 shows an example in which a buffer layer is provided.
- a buffer layer 3a is formed on the crystal substrate 1, and a convex portion 2a is formed on the buffer layer 3a. Then, the epitaxial layer 3 is formed on the convex portion 2a.
- a crystal film having a corundum structure ⁇ -gallia structure
- ⁇ -gallia structure ⁇ -gallia structure
- ⁇ -gallia structure high-quality corundum structure
- the method for forming the preferred first lateral crystal growth layer described above or the buffer layer on the buffer layer After forming the buffer layer on a part or all of the surface on the substrate as described above, the method for forming the preferred first lateral crystal growth layer described above or the buffer layer on the buffer layer.
- defects such as tilt in the first lateral crystal growth layer can be further reduced, and the film quality can be made more excellent. Can be done.
- the support is not particularly limited as long as it can support the crystal film and has a thermal conductivity of 100 W / m ⁇ K or more at room temperature, and may be a known support.
- the shape of the support is not particularly limited and may have various shapes, but in the present invention, the support is preferably a substrate.
- the substrate may have one or more films, other layers, or the like on the surface.
- the support preferably contains silicon, and more preferably a SiC substrate or a Si substrate. By using such a preferable support, a laminated structure having more excellent semiconductor characteristics can be obtained.
- the re-growth layer 12 is formed on the crystal growth layer 8 by crystal growth again according to a conventional method such as HVPE or mist CVD method, and FIG. 5 (g) shows.
- a conventional method such as HVPE or mist CVD method
- FIG. 5 (g) shows.
- the laminated structure (f) or (g) thus obtained has a crystal film having a large area and a good film thickness distribution and a film thickness of 30 ⁇ m or less, and is excellent in heat dissipation.
- FIG. 6C shows a laminated structure in which the crystal growth layer 8 is formed on the sapphire substrate 1 having the ELO mask 5 on the surface.
- a second mask 15 is formed on the first lateral crystal growth layer 8 to obtain the laminated structure of FIG. 6 (b').
- a second lateral crystal growth layer is formed on the laminated structure (b') to obtain the laminated structure of FIG. 7 (c').
- the support substrate 11 is attached on the second lateral crystal growth layer to obtain the laminated structure of FIG. 8 (d').
- the sapphire substrate 1 is peeled off according to a conventional method such as mechanical peeling means to obtain the laminated structure of FIG. 9 (e').
- the ELO mask 5, the first lateral crystal growth layer 8, and the second mask 15 are removed according to a conventional method such as CMP, and FIG. 10 (f). ') Obtain a laminated structure.
- the laminated structure (f') thus obtained has a large area and a good film thickness distribution of 30 ⁇ m or less, has a crystal film with a further reduced dislocation density, and has excellent heat dissipation. ing.
- 31 is a double-sided cooling type power card 201, and includes a refrigerant tube 202, a spacer 203, an insulating plate (insulating spacer) 208, a sealing resin portion 209, a semiconductor chip 301a, and a metal heat transfer plate (protruding terminal). Section) 302b, a heat sink and an electrode 303, a metal heat transfer plate (protruding terminal section) 303b, a solder layer 304, a control electrode terminal 305, and a bonding wire 308.
- the cross section in the thickness direction of the refrigerant tube 202 has a large number of flow paths 222 partitioned by a large number of partition walls 221 extending in the flow path direction at predetermined intervals from each other. According to such a suitable power card, higher heat dissipation can be realized and higher reliability can be satisfied.
- the resin sealing portion 209 is made of, for example, an epoxy resin, and is molded by covering the side surfaces of the metal heat transfer plates 302b and 303b, and the semiconductor chip 301a is molded by the resin sealing portion 209. However, the outer main surface, that is, the contact heat receiving surface of the metal heat transfer plates 302b and 303b is completely exposed.
- the metal heat transfer plates (protruding terminal portions) 302b and 303b project to the right in FIG. 31 from the resin sealing portion 209, and the control electrode terminal 305, which is a so-called lead frame terminal, is, for example, a semiconductor chip 301a on which an IGBT is formed.
- the gate (control) electrode surface and the control electrode terminal 305 are connected.
- the insulating plate 208 which is an insulating spacer, is made of, for example, an aluminum nitride film, but may be another insulating film.
- the insulating plate 208 completely covers and adheres to the metal heat transfer plates 302b and 303b, but the insulating plate 208 and the metal heat transfer plates 302b and 303b may simply come into contact with each other or have good heat such as silicon grease. Heat transfer materials may be applied or they may be joined in various ways. Further, the insulating layer may be formed by ceramic spraying or the like, the insulating plate 208 may be bonded on the metal heat transfer plate, or may be bonded or formed on the refrigerant tube.
- the surface of the soft spacer 203 is easily deformed to adapt to the minute irregularities and warpage of the insulating plate 208 and the minute irregularities and warpage of the refrigerant tube 202 to reduce the thermal resistance.
- a known good thermal conductive grease or the like may be applied to the surface of the spacer 203 or the like, or the spacer 203 may be omitted.
- the crystal growth layer 8 is formed on the sapphire substrate 1 having the ELO mask 5 on the surface.
- a SiC substrate is attached as a support substrate 10 on the crystal growth layer 8 to obtain the laminated structure of FIG. 2 (d).
- the sapphire substrate 1 is peeled off by using a mechanical peeling means to obtain the laminated structure of FIG. 3 (e).
- the ELO mask 5 is removed using CMP to obtain the laminated structure of FIG. 4 (f).
Abstract
Description
特許文献8には、少なくとも、ガリウム原料と酸素原料とを用いて、ハライド気相成長法(HVPE法)により、コランダム構造を有する酸化ガリウムを成膜することが記載されている。また、特許文献10および11には、PSS基板を用いて、ELO結晶成長を行い、表面積は9μm2以上であり、転移密度が5×106cm-2の結晶膜を得ることが記載されている。しかしながら、酸化ガリウムは放熱性に課題があり、放熱性の課題を解消するには、例えば酸化ガリウムの膜厚を30μm以下に薄くする必要があるが、研磨工程が煩雑となり、コストが高くなるという問題があり、また、そもそも、研磨により薄くした場合には、膜厚分布を維持したまま大面積の酸化ガリウム膜を得ることが困難という問題を抱えていた。また、縦型デバイスとした場合の直列抵抗においても、十分に満足できるものではなかった。そのため、パワーデバイスとして酸化ガリウムの性能を存分に発揮するには、さらに大面積の膜厚分布のよい膜厚30μm以下の酸化ガリウム膜を得ることが望ましく、このような結晶膜が待ち望まれていた。
なお、特許文献1~11はいずれも本出願人らによる特許または特許出願に関する公報であり、現在も検討が進められている。
[1] 支持体上に直接または他の層を介して結晶性金属酸化物を主成分として含む結晶膜が積層されている積層構造体であって、前記支持体が、室温において100W/m・K以上の熱伝導率を有しており、前記結晶膜が、コランダム構造を有しており、さらに、前記結晶膜の膜厚が1μm~30μmであり、前記結晶膜の面積が、15cm2以上であり、前記面積における前記膜厚の分布が、±10%以下の範囲内であることを特徴とする積層構造体。
[2] 支持体上に直接または他の層を介して結晶性金属酸化物を主成分として含む結晶膜が積層されている積層構造体であって、前記支持体が、室温において100W/m・K以上の熱伝導率を有しており、前記結晶膜が、βガリア構造を有しており、前記結晶膜の主面が(001)面または(100)面であり、さらに、前記結晶膜の膜厚が1μm~30μmであり、前記結晶膜の面積が、15cm2以上であり、前記面積における前記膜厚の分布が、±10%以下の範囲内であることを特徴とする積層構造体。
[3] 前記結晶性金属酸化物が少なくともガリウムを含む、前記[1]または[2]に記載の積層構造体。
[4] 前記結晶膜が、半導体膜である前記[1]~[3]のいずれかに記載の積層構造体。
[5] 前記結晶膜の主面が、r面またはS面である前記[1]記載の積層構造体。
[6] 前記面積における前記膜厚の分布が、±5%以下の範囲内である前記[1]~[5]のいずれかに記載の積層構造体。
[7] 前記結晶膜の転位密度が、1.0×106/cm2以下である前記[1]~[6]のいずれかに記載の積層構造体。
[8] 前記結晶膜の転位密度が、1.0×103/cm2以下である前記[2]記載の積層構造体。
[9] 前記結晶膜の面積が、100cm2以上である前記[1]~[8]のいずれかに記載の積層構造体。
[10] 前記支持体が、ケイ素を含む前記[1]~[9]のいずれかに記載の積層構造体。
[11] 前記支持体が、SiC基板またはSi基板である前記[1]~[10]のいずれかに記載の積層構造体。
[12] 前記支持体が、4インチ基板、6インチ基板、8インチ基板または12インチ基板である前記[1]~[11]のいずれかに記載の積層構造体。
[13] 電極および半導体層を少なくとも含む半導体装置であって、前記[1]~[12]のいずれかに記載の積層構造体を含むことを特徴とする半導体装置。
[14] 前記積層構造体の結晶膜が半導体膜であり、前記半導体層として前記半導体膜が用いられている前記[13]記載の半導体装置。
[15] パワーデバイスである前記[13]または[14]に記載の半導体装置。
[16] 半導体装置を備える半導体システムであって、前記半導体装置が、前記[13]~[15]のいずれかに記載の半導体装置であることを特徴とする半導体システム。
[17] 横方向結晶成長を含む結晶成長により、結晶成長用基板上に結晶成長層を形成したのち、室温における熱伝導率が100W/m・K以上の支持体を前記結晶成長層上に貼り付け、ついで、前記結晶成長用基板を剥離することを特徴とする積層構造体の製造方法。
[18] 前記支持体が、ケイ素を含む前記[17]記載の製造方法。
[19] 前記支持体が、SiC基板またはSi基板である前記[17]または[18]に記載の製造方法。
[20] 前記支持体の面積が、15cm2以上である前記[17]~[19]のいずれかに記載の製造方法。
[21] 前記支持体の面積が、100cm2以上である前記[17]~[20]のいずれかに記載の製造方法。
[22] 前記結晶成長層が、ガリウムを含む前記[17]~[21]のいずれかに記載の製造方法。
[23] 前記結晶成長層が、結晶性酸化物を主成分として含む前記[17]~[22]のいずれかに記載の製造方法。
[24] 前記結晶性酸化物が、Ga2O3を含む前記[23]記載の製造方法。
[25] 前記結晶成長用基板が、コランダム構造を有し、前記結晶成長用基板の結晶成長面がr面またはS面である前記[17]~[24]のいずれかに記載の製造方法。
[26] 前記結晶成長用基板が、βガリア構造を有し、前記結晶成長用基板の結晶成長面が(100)面または(001)面である前記[17]~[24]のいずれかに記載の製造方法。
[27] 前記の結晶成長を、HVPE法またはミストCVD法により行う、前記[17]~[26]のいずれかに記載の製造方法。
[28] 前記の横方向結晶成長を、ELOマスクを用いて行う前記[17]~[27]のいずれかに記載の製造方法。
[29] 前記ELOマスクがストライプ状またはドット状のパターンを有している前記[28]記載の製造方法。
前記金属源は、金属を含んでおり、ガス化が可能なものであれば、特に限定されず、金属単体であってもよいし、金属化合物であってもよい。前記金属としては、例えば、ガリウム、アルミニウム、インジウム、鉄、クロム、バナジウム、チタン、ロジウム、ニッケル、コバルトおよびイリジウム等から選ばれる1種または2種以上の金属等が挙げられる。本発明においては、前記金属が、ガリウム、アルミニウムおよびインジウムから選ばれる1種または2種以上の金属であるのが好ましく、ガリウムであるのがより好ましく、前記金属源が、ガリウム単体であるのが最も好ましい。また、前記金属源は、気体であってもよいし、液体であってもよいし、固体であってもよいが、本発明においては、例えば、前記金属としてガリウムを用いる場合には、前記金属源が液体であるのが好ましい。
前記結晶基板は、結晶物を主成分として含む基板であれば特に限定されず、公知の基板であってよい。絶縁体基板であってもよいし、導電性基板であってもよいし、半導体基板であってもよい。単結晶基板であってもよいし、多結晶基板であってもよい。前記結晶基板としては、例えば、コランダム構造を有する結晶物を主成分として含む基板、またはβ-ガリア構造を有する結晶物を主成分として含む基板、六方晶構造を有する基板などが挙げられる。なお、前記「主成分」とは、基板中の組成比で、前記結晶物を50%以上含むものをいい、好ましくは70%以上含むものであり、より好ましくは90%以上含むものである。
霧化工程は、前記原料溶液を霧化して前記霧化液滴を得る。前記原料溶液の霧化手段は、前記原料溶液を霧化できさえすれば特に限定されず、公知の手段であってよいが、本発明の前記実施形態においては、超音波を用いる霧化手段が好ましい。超音波を用いて得られた霧化液滴は、初速度がゼロであり、空中に浮遊するので好ましく、例えば、スプレーのように吹き付けるのではなく、空間に浮遊してガスとして搬送することが可能なミストであるので衝突エネルギーによる損傷がないため、非常に好適である。前記霧化液滴の液滴サイズは、特に限定されず、数mm程度の液滴であってもよいが、好ましくは50μm以下であり、より好ましくは0.1~10μmである。
前記原料溶液は、霧化が可能なものであって、ミストCVDにより、前記バッファ層が得られる溶液であれば特に限定されない。前記原料溶液としては、例えば、霧化用金属の有機金属錯体(例えばアセチルアセトナート錯体等)やハロゲン化物(例えばフッ化物、塩化物、臭化物またはヨウ化物等)の水溶液などが挙げられる。前記霧化用金属は、特に限定されず、このような霧化用金属としては、例えば、アルミニウム、ガリウム、インジウム、鉄、クロム、バナジウム、チタン、ロジウム、ニッケル、コバルトおよびイリジウム等から選ばれる1種または2種以上の金属等が挙げられる。本発明においては、前記霧化用金属が、ガリウム、インジウムまたはアルミニウムを少なくとも含むのが好ましく、ガリウムを少なくとも含むのがより好ましい。原料溶液中の霧化用金属の含有量は、本発明の目的を阻害しない限り特に限定されないが、好ましくは、0.001モル%~50モル%であり、より好ましくは0.01モル%~50モル%である。
搬送工程では、キャリアガスでもって前記霧化液滴を成膜室内に搬送する。前記キャリアガスは、本発明の目的を阻害しない限り特に限定されず、例えば、酸素、オゾン、窒素やアルゴン等の不活性ガス、または水素ガスやフォーミングガス等の還元ガスが好適な例として挙げられる。また、キャリアガスの種類は1種類であってよいが、2種類以上であってもよく、流量を下げた希釈ガス(例えば10倍希釈ガス等)などを、第2のキャリアガスとしてさらに用いてもよい。また、キャリアガスの供給箇所も1箇所だけでなく、2箇所以上あってもよい。キャリアガスの流量は、特に限定されないが、0.01~20L/分であるのが好ましく、1~10L/分であるのがより好ましい。希釈ガスの場合には、希釈ガスの流量が、0.001~2L/分であるのが好ましく、0.1~1L/分であるのがより好ましい。
バッファ層形成工程では、成膜室内で前記霧化液滴を熱反応させることによって、基板上に、前記バッファ層を形成する。熱反応は、熱でもって前記霧化液滴が反応すればそれでよく、反応条件等も本発明の目的を阻害しない限り特に限定されない。本工程においては、前記熱反応を、通常、溶媒の蒸発温度以上の温度で行うが、高すぎない温度(例えば1000℃)以下が好ましく、650℃以下がより好ましく、400℃~650℃が最も好ましい。また、熱反応は、本発明の目的を阻害しない限り、真空下、非酸素雰囲気下、還元ガス雰囲気下および酸素雰囲気下のいずれの雰囲気下で行われてもよく、また、大気圧下、加圧下および減圧下のいずれの条件下で行われてもよいが、本発明においては、大気圧下で行われるのが好ましい。なお、バッファ層の厚みは、形成時間を調整することにより、設定することができる。
前記支持体は、前記結晶膜を支持できるものであって、室温において100W/m・K以上の熱伝導率を有するものであれば、特に限定されず、公知の支持体であってよい。前記支持体の形状等も特に限定されず、種々の形状を有していてもよいが、本発明においては、前記支持体が基板であるのが好ましい。なお、前記基板は、表面に1または2以上の膜や他の層等を有していてもよい。本発明においては、前記支持体が、ケイ素を含むのが好ましく、SiC基板またはSi基板であるのがより好ましい。このような好ましい支持体を用いることにより、より半導体特性に優れた積層構造体を得ることができる。また、前記支持体の面積も、特に限定されないが、前記支持体の面積が、15cm2以上であるのが、より工業的有利に半導体装置等に用いることができるので、好ましく、100cm2以上であるのがより好ましい。また、本発明においては、前記支持体が、4インチ基板、6インチ基板、8インチ基板または12インチ基板であるのが、より工業的有利に半導体装置等に用いることができるので、好ましい。
なお、本発明においては、前記第1の横方向結晶成長層または前記第2の横方向結晶成長層を剥離犠牲層としてもよい。
1.積層構造体の作製
結晶成長用基板として、表面にELOマスクを形成する。なお、結晶成長用基板には、サファイア基板を用いる。本発明においては、前記サファイア基板として、r面またはS面を主面とするサファイア基板を用いるのが好ましい。図1(a)は、サファイア基板1を示す。図1(b)に示すとおり、サファイア基板1の結晶成長面上にストライプ状のパターンを有するELOマスク5を形成する。図1(b)の結晶成長用基板を用いて、ミストCVD法でもって、α―Ga2O3からなる結晶成長層を形成し、図1(c)の積層構造体を得る。積層構造体(c)は、ELOマスク5を表面に有しているサファイア基板1上に結晶成長層8が形成されている。積層構造体(c)を得た後、結晶成長層8上に支持基板10としてSiC基板を貼り付けて、図2(d)の積層構造体を得る。積層構造体(d)を得た後、サファイア基板1を、機械的剥離手段を用いて、剥離し、図3(e)の積層構造体を得る。積層構造体(e)を得た後、ELOマスク5を、CMPを用いて除去して図4(f)の積層構造体を得る。積層構造体(f)を得た後、結晶成長層8上に、ミストCVD法を用いて再度結晶成長させることにより、再成長層12を形成し、図5(g)の積層構造体を得る。このようにして得られた積層構造体(f)または(g)は、大面積でかつ膜厚分布が良好な膜厚30μm以下の結晶膜を有し、放熱性に優れている。
上記1.の作製例を下記表1および表2の条件に適用して結晶成長層の厚さが10μmとなるように結晶成長させて積層構造体を作製し、面積、膜厚分布、および転位密度を評価した。
1 基板(サファイア基板)
1a 基板の表面(結晶成長面)
2a 凸部
2b 凹部
3 結晶成長層(エピタキシャル層)
3a バッファ層
4 マスク層
5 マスク(基板上)
6 マスクの開口部
7 マスク(第1の横方向成長層上)
8 結晶成長層(第1の横方向結晶成長層)
9 第2の横方向結晶成長層
10 支持体(支持基板)
11 支持体(支持基板)
12 再成長層
15 第2のマスク
19 ミストCVD装置
20 被成膜試料
21 試料台
22a キャリアガス源
22b キャリアガス(希釈)源
23a 流量調節弁
23b 流量調節弁
24 ミスト発生源
24a 原料溶液
24b ミスト
25 容器
25a 水
26 超音波振動子
27 成膜室
28 ヒータ
50 ハライド気相成長(HVPE)装置
51 反応室
52a ヒータ
52b ヒータ
53a ハロゲン含有原料ガス供給源
53b 金属含有原料ガス供給管
54a 反応性ガス供給源
54b 反応性ガス供給管
55a 酸素含有原料ガス供給源
55b 酸素含有原料ガス供給管
56 基板ホルダ
57 金属源
58 保護シート
59 ガス排出部
170 電源システム
171 電源装置
172 電源装置
173 制御回路
180 システム装置
181 電子回路
182 電源システム
192 インバータ
193 トランス
194 整流MOSFET
195 DCL
196 PWM制御回路
197 電圧比較器
201 両面冷却型パワーカード
202 冷媒チューブ
203 スペーサ
208 絶縁板(絶縁スペーサ)
209 封止樹脂部
221 隔壁
222 流路
301a 半導体チップ
302b 金属伝熱板(突出端子部)
303 ヒートシンク及び電極
303b 金属伝熱板(突出端子部)
304 はんだ層
305 制御電極端子
308 ボンディングワイヤ
500 半導体素子
501 半田
502 リードフレーム、回路基板または放熱基板
Claims (29)
- 支持体上に直接または他の層を介して結晶性金属酸化物を主成分として含む結晶膜が積層されている積層構造体であって、前記支持体が、室温において100W/m・K以上の熱伝導率を有しており、前記結晶膜が、コランダム構造を有しており、さらに、前記結晶膜の膜厚が1μm~30μmであり、前記結晶膜の面積が、15cm2以上であり、前記面積における前記膜厚の分布が、±10%以下の範囲内であることを特徴とする積層構造体。
- 支持体上に直接または他の層を介して結晶性金属酸化物を主成分として含む結晶膜が積層されている積層構造体であって、前記支持体が、室温において100W/m・K以上の熱伝導率を有しており、前記結晶膜が、βガリア構造を有しており、前記結晶膜の主面が(001)面または(100)面であり、さらに、前記結晶膜の膜厚が1μm~30μmであり、前記結晶膜の面積が、15cm2以上であり、前記面積における前記膜厚の分布が、±10%以下の範囲内であることを特徴とする積層構造体。
- 前記結晶性金属酸化物が少なくともガリウムを含む、請求項1または2に記載の積層構造体。
- 前記結晶膜が、半導体膜である請求項1~3のいずれかに記載の積層構造体。
- 前記結晶膜の主面が、r面またはS面である請求項1記載の積層構造体。
- 前記面積における前記膜厚の分布が、±5%以下の範囲内である請求項1~5のいずれかに記載の積層構造体。
- 前記結晶膜の転位密度が、1.0×106/cm2以下である請求項1~6のいずれかに記載の積層構造体。
- 前記結晶膜の転位密度が、1.0×103/cm2以下である請求項2記載の積層構造体。
- 前記結晶膜の面積が、100cm2以上である請求項1~8のいずれかに記載の積層構造体。
- 前記支持体が、ケイ素を含む請求項1~9いずれかに記載の積層構造体。
- 前記支持体が、SiC基板またはSi基板である請求項1~10のいずれかに記載の積層構造体。
- 前記支持体が、4インチ基板、6インチ基板、8インチ基板または12インチ基板である請求項1~11のいずれかに記載の積層構造体。
- 電極および半導体層を少なくとも含む半導体装置であって、請求項1~12のいずれかに記載の積層構造体を含むことを特徴とする半導体装置。
- 前記積層構造体の結晶膜が半導体膜であり、前記半導体層として前記半導体膜が用いられている請求項13記載の半導体装置。
- パワーデバイスである請求項13または14に記載の半導体装置。
- 半導体装置を備える半導体システムであって、前記半導体装置が、請求項13~15のいずれかに記載の半導体装置であることを特徴とする半導体システム。
- 横方向結晶成長を含む結晶成長により、結晶成長用基板上に結晶成長層を形成したのち、室温における熱伝導率が100W/m・K以上の支持体を前記結晶成長層上に貼り付け、ついで、前記結晶成長用基板を剥離することを特徴とする積層構造体の製造方法。
- 前記支持体が、ケイ素を含む請求項17記載の製造方法。
- 前記支持体が、SiC基板またはSi基板である請求項17または18に記載の製造方法。
- 前記支持体の面積が、15cm2以上である請求項17~19のいずれかに記載の製造方法。
- 前記支持体の面積が、100cm2以上である請求項17~20のいずれかに記載の製造方法。
- 前記結晶成長層が、ガリウムを含む請求項17~21のいずれかに記載の製造方法。
- 前記結晶成長層が、結晶性酸化物を主成分として含む請求項17~22のいずれかに記載の製造方法。
- 前記結晶性酸化物が、Ga2O3を含む請求項23記載の製造方法。
- 前記結晶成長用基板が、コランダム構造を有し、前記結晶成長用基板の結晶成長面がr面またはS面である請求項17~24のいずれかに記載の製造方法。
- 前記結晶成長用基板が、βガリア構造を有し、前記結晶成長用基板の結晶成長面が(100)面または(001)面である請求項17~24のいずれかに記載の製造方法。
- 前記の結晶成長を、HVPE法またはミストCVD法により行う、請求項17~26のいずれかに記載の製造方法。
- 前記の横方向結晶成長を、ELOマスクを用いて行う請求項17~27のいずれかに記載の製造方法。
- 前記ELOマスクがストライプ状またはドット状のパターンを有している請求項28記載の製造方法。
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WO2023079787A1 (ja) * | 2021-11-02 | 2023-05-11 | 信越化学工業株式会社 | 成膜装置及び成膜方法並びに酸化物半導体膜及び積層体 |
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