WO2014188731A1 - 封止膜、有機ｅｌデバイス、可撓性基板、および、封止膜の製造方法 - Google Patents

封止膜、有機ｅｌデバイス、可撓性基板、および、封止膜の製造方法 Download PDF

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Publication number
WO2014188731A1
WO2014188731A1 PCT/JP2014/002723 JP2014002723W WO2014188731A1 WO 2014188731 A1 WO2014188731 A1 WO 2014188731A1 JP 2014002723 W JP2014002723 W JP 2014002723W WO 2014188731 A1 WO2014188731 A1 WO 2014188731A1
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Prior art keywords
hydrogen concentration
sealing film
organic
film
concentration derived
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PCT/JP2014/002723
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English (en)
French (fr)
Japanese (ja)
Inventor
友香 伊佐治
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Panasonic Corp
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Panasonic Corp
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Priority to US14/768,858 priority Critical patent/US9601718B2/en
Priority to EP14801311.3A priority patent/EP3006597B1/en
Priority to JP2015518089A priority patent/JP6280109B2/ja
Priority to CN201480010098.7A priority patent/CN105637117A/zh
Publication of WO2014188731A1 publication Critical patent/WO2014188731A1/ja
Anticipated expiration legal-status Critical
Priority to US15/428,603 priority patent/US10256437B2/en
Priority to US16/288,958 priority patent/US10903452B2/en
Priority to US17/129,045 priority patent/US11411203B2/en
Priority to US17/812,647 priority patent/US11903241B2/en
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a sealing film containing silicon nitride as a main component (hereinafter referred to as “silicon nitride film”).
  • Non-Patent Document 1 proposes to increase the gas barrier property of the sealing film by reducing the impurity concentration in the sealing film.
  • Patent Document 1 proposes to improve the gas barrier property of the silicon nitride film by reducing the oxygen concentration in the silicon nitride film (paragraph 0018).
  • a material that is easily denatured by oxygen and water vapor may be used, so that particularly high gas barrier properties are required.
  • gas barrier property is high.
  • a dense film with few impurities is considered good for improving gas barrier properties.
  • a dense film is vulnerable to impact and bending, and cracks are likely to occur.
  • the inventor conducted research to increase the gas barrier property and crack resistance of the silicon nitride film, and was able to obtain new knowledge regarding factors that affect the gas barrier property of the silicon nitride film.
  • One object of the present invention is to provide a silicon nitride film having good gas barrier properties and crack resistance based on this new knowledge.
  • the sealing film according to one embodiment of the present invention is a sealing film containing silicon nitride as a main component, and the sum of the hydrogen concentration derived from Si—H and the hydrogen concentration derived from N—H is 3E22 atoms / cm 3 or more. Yes, the ratio of the hydrogen concentration derived from Si—H to the total is 40% or more.
  • the figure which shows the measurement result of the total hydrogen concentration and water vapor transmission rate in the silicon nitride film The figure which shows the measurement result of the total hydrogen concentration in a silicon nitride film, the hydrogen concentration derived from Si-H, the ratio of the hydrogen concentration derived from Si-H to the whole film, and the water vapor transmission rate The figure which shows the measurement result of the whole hydrogen concentration in the silicon nitride film, Si-H hydrogen concentration and water vapor transmission rate. The figure which shows the measurement result of the ratio of the hydrogen concentration derived from Si-H of the hydrogen concentration in a silicon nitride film, and water vapor transmission rate The figure which shows the measurement result of the ratio of the hydrogen concentration derived from Si-H in a film
  • FIG. 5A is a diagram showing the relationship between the heating temperature of a silicon nitride film and the hydrogen concentration in the silicon nitride film.
  • FIG. 5A is a diagram of a sample formed under the condition that the film forming method is CCP-CVD and the substrate temperature is 380 ° C.
  • Sectional drawing which shows the manufacture process of the organic EL device which concerns on the modification 5 of Embodiment 2 of this invention. Sectional drawing which shows the manufacture process of the organic EL device which concerns on the modification 5 of Embodiment 2 of this invention.
  • the perspective view which shows the optical reflective element which concerns on Embodiment 3 of this invention.
  • the perspective view which shows the optical reflection element which concerns on the modification of Embodiment 3 of this invention.
  • the silicon nitride film is formed using thermal CVD (Chemical Vapor Deposition), Cat-CVD, surface wave plasma CVD, or the like.
  • thermal CVD a film is formed in a high-temperature atmosphere, and therefore a silicon nitride precursor (SiH x generated from the source gas SiH 4 and generated from the source gas NH 3 is attached to the film surface during film formation.
  • NH x silicon nitride precursor
  • NH x easily moves to an appropriate position. Therefore, the film density of the silicon nitride film is increased, and as a result, the gas barrier property of the silicon nitride film is increased.
  • Si—H silicon and hydrogen
  • N—H nitrogen and hydrogen
  • FIG. 1 shows the measurement results of the hydrogen concentration and water vapor transmission rate of each sample.
  • the water vapor transmission rate is a parameter indicating the gas barrier property of the silicon nitride film. The lower the water vapor transmission rate, the higher the gas barrier property of the silicon nitride film.
  • the sealing film according to one embodiment of the present invention is a sealing film containing silicon nitride as a main component, and the sum of the hydrogen concentration derived from Si—H and the hydrogen concentration derived from N—H is 3E22 atoms / cm 3 or more. Yes, the ratio of the hydrogen concentration derived from Si—H to the total is 40% or more. Thereby, favorable gas barrier property and crack tolerance can be obtained.
  • the ratio of the hydrogen concentration derived from Si—H to the total may be 60% or more. Thereby, the gas barrier property can be further improved.
  • the ratio of the hydrogen concentration derived from NH may be 45% or less. Thereby, favorable weather resistance can be obtained.
  • the ratio of the hydrogen concentration derived from N—H to the total may be 30% or less. Thereby, the weather resistance can be further improved.
  • An organic EL device includes a first sealing film, a second sealing film facing the first sealing film, the first sealing film, and the second sealing film.
  • An organic EL element disposed therebetween.
  • At least one of the first sealing film and the second sealing film is mainly composed of silicon nitride, and the sum of the hydrogen concentration derived from Si—H and the hydrogen concentration derived from NH is 3E22 atoms / cm 3 or more.
  • the ratio of the hydrogen concentration derived from Si—H to the total is 40% or more. Thereby, favorable gas barrier property and crack tolerance can be obtained.
  • the organic EL device further includes a first resin substrate disposed on a side opposite to the organic EL element of the first sealing film, and a side opposite to the organic EL element on the second sealing film. And a third sealing film mainly composed of silicon nitride and disposed between the second sealing film and the organic EL element.
  • the ratio of the hydrogen concentration derived from Si—H of the first and second sealing films to the total is higher than the ratio of the hydrogen concentration derived from Si—H of the third sealing film to the total. May be expensive.
  • the first sealing film and the second sealing film are present at positions where moisture can easily enter from the outside as compared with the third sealing film.
  • the lifetime of the organic EL device can be extended by enhancing the gas barrier property of the sealing film present at a position where moisture can easily enter from the outside.
  • the organic EL device further includes a first resin substrate disposed on a side opposite to the organic EL element of the first sealing film, and a side opposite to the organic EL element on the second sealing film. And a third sealing film mainly composed of silicon nitride and disposed between the second sealing film and the organic EL element.
  • the total of the hydrogen concentration derived from Si—H and the hydrogen concentration derived from N—H in each of the first sealing film and the second sealing film is the Si—H of the third sealing film. It may be higher than the sum of the hydrogen concentration derived from H and the hydrogen concentration derived from NH.
  • the first sealing film and the second sealing film have a larger curvature when the organic EL device is bent than the third sealing film. The lifetime of the organic EL device can be extended by increasing the crack resistance of the sealing film that has a large curvature when the organic EL device is bent.
  • the organic EL device further includes a first resin substrate disposed on a side opposite to the organic EL element of the first sealing film, and a side opposite to the organic EL element on the second sealing film. And a third sealing film mainly composed of silicon nitride and disposed between the second sealing film and the organic EL element.
  • the ratio of the hydrogen concentration derived from NH of the first sealing film to the total is the third sealing
  • the ratio of the hydrogen concentration derived from N—H of the third sealing film is lower than the ratio of the hydrogen concentration derived from N—H of the film to the N—H of the second sealing film.
  • the first sealing film is present at a position where external light is more easily incident than the third sealing film.
  • the third sealing film is present at a position where external light is more likely to enter than the second sealing film.
  • the lifetime of the organic EL device can be extended by increasing the weather resistance of the sealing film present at a position where external light is likely to be incident.
  • the ratio of the hydrogen concentration derived from NH of the second sealing film to the total is the third concentration.
  • the ratio of the hydrogen concentration derived from N—H of the sealing film to the total is lower than the ratio of the hydrogen concentration derived from N—H of the third sealing film to the total of the first sealing film. It may be lower than the ratio of the hydrogen concentration derived from NH to the total.
  • the second sealing film is present at a position where external light is more likely to enter than the third sealing film.
  • the third sealing film exists at a position where external light is more likely to enter than the first sealing film. The lifetime of the organic EL device can be extended by increasing the weather resistance of the sealing film present at a position where external light is likely to be incident.
  • the organic EL device further includes a thin film transistor including an oxide semiconductor film, which is disposed between the first sealing film and the organic EL element and is electrically connected to the organic EL element. Also good.
  • the sum of the hydrogen concentration derived from Si—H and the hydrogen concentration derived from N—H in the first sealing film is the sum of the hydrogen concentration derived from Si—H and the NH concentration from the second sealing film. It is good also as being lower than the sum total of the hydrogen concentration derived from.
  • the electrical properties of the oxide semiconductor film are changed. This causes a problem such as a threshold shift in a thin film transistor including an oxide semiconductor film.
  • the first sealing film is present at a position closer to the oxide semiconductor film than the second sealing film. By reducing the overall hydrogen concentration of the sealing film that is close to the oxide semiconductor film, the possibility that hydrogen is introduced into the oxide semiconductor film can be reduced.
  • the organic EL device may further include a third sealing film mainly composed of silicon nitride disposed between the thin film transistor and the organic EL element.
  • a third sealing film mainly composed of silicon nitride disposed between the thin film transistor and the organic EL element.
  • the sum of the hydrogen concentration derived from Si—H and the hydrogen concentration derived from N—H in the third sealing film is equal to the hydrogen concentration derived from Si—H in the second sealing film and the N— It is good also as being lower than the sum total of the hydrogen concentration derived from H.
  • the third sealing film is present at a position closer to the oxide semiconductor film than the second sealing film.
  • a flexible substrate includes a resin substrate and a sealing film disposed over the resin substrate, and the sealing film includes silicon nitride as a main component and is derived from Si—H.
  • the ratio of the hydrogen concentration to the total of the hydrogen concentration derived from Si—H and the hydrogen concentration derived from N—H is 40% or more. Thereby, a favorable gas barrier property can be obtained.
  • the ratio of the hydrogen concentration derived from Si—H to the sum of the hydrogen concentration derived from Si—H and the hydrogen concentration derived from N—H may be 60% or more. Thereby, gas barrier property can be made more favorable.
  • the total of the hydrogen concentration derived from Si—H and the hydrogen concentration derived from N—H may be 3E22 atoms / cm 3 or more. Thereby, good crack resistance can be obtained.
  • a manufacturing method of a sealing film according to one embodiment of the present invention is a manufacturing method of manufacturing a sealing film containing silicon nitride as a main component by a chemical vapor deposition method using surface wave plasma.
  • the temperature of the resin substrate on which the sealing film is formed may be maintained at 120 ° C. or lower. Thereby, it can suppress that a resin substrate changes in quality with a heat
  • the sealing film according to one embodiment of the present invention includes a sealing film containing silicon nitride as a main component and a hydrogen concentration derived from Si—H and a hydrogen concentration derived from Si—H and a hydrogen derived from N—H. It is good also as a ratio with respect to the sum total of a density
  • the ratio of the hydrogen concentration derived from Si—H to the sum of the hydrogen concentration derived from Si—H and the hydrogen concentration derived from N—H may be 60% or more. Thereby, gas barrier property can be made more favorable.
  • the hydrogen concentration derived from Si—H in the silicon nitride film is referred to as “Si—H hydrogen concentration”.
  • the hydrogen concentration derived from N—H in the silicon nitride film is referred to as “N—H hydrogen concentration”.
  • the total of Si—H hydrogen concentration and N—H hydrogen concentration in the silicon nitride film is referred to as “total hydrogen concentration”.
  • the ratio of the Si—H hydrogen concentration to the total hydrogen concentration is referred to as “Si—H hydrogen concentration ratio”.
  • the ratio of the NH hydrogen concentration to the total hydrogen concentration is referred to as “NH hydrogen concentration ratio”.
  • ⁇ Embodiment 1> 2 and 3 show the measurement results of the hydrogen concentration and water vapor permeability of nine types of samples having different hydrogen concentrations.
  • Each sample is produced by a surface wave plasma CVD (SWP-CVD) method using silane (SiH 4 ) and ammonia (NH 3 ) as source gases.
  • the hydrogen concentration of each sample can be arbitrarily changed by changing the input power to the surface wave plasma CVD apparatus, the SiH 4 flow rate, and the NH 3 flow rate. For example, as the input power is increased, the total hydrogen concentration decreases, the Si—H hydrogen concentration decreases, and the N—H hydrogen concentration tends to increase. Further, when the SiH 4 flow rate is increased, the Si—H hydrogen concentration tends to increase and the N—H hydrogen concentration tends to decrease. Further, when the NH 3 flow rate is increased, the Si—H hydrogen concentration tends to decrease and the N—H hydrogen concentration tends to increase.
  • the Si—H hydrogen concentration and N—H hydrogen concentration were measured by Fourier transform infrared spectroscopy (FT-IR). In this method, these hydrogen concentrations can be measured individually. And the sum total of these was made into the whole hydrogen concentration (Total). As each sample, a silicon nitride film of 400 nm to 500 nm formed on a silicon substrate was used.
  • FT-IR Fourier transform infrared spectroscopy
  • the water vapor transmission rate was measured by the calcium corrosion method. As each sample, a silicon nitride film having a thickness of 500 nm formed on a resin substrate was used.
  • the experimental environment was a temperature of 60 ° C. and a humidity of 90% RH. All the values of water vapor transmission rate in this specification are values at a temperature of 60 ° C. and a humidity of 90% RH. Based on the knowledge thus far, the measured value at a temperature of 60 ° C. and a humidity of 90% RH can be converted as 20 times the value at a temperature of 25 ° C. and a humidity of 50% RH (indoor environment).
  • FIG. 4 shows the measurement results of the Si—H hydrogen concentration ratio and water vapor transmission rate of each sample. According to the figure, it can be seen that the water vapor transmission rate decreases as the Si—H hydrogen concentration ratio increases. Therefore, it has been clarified that the gas barrier property of the silicon nitride film does not depend on the total hydrogen concentration in the silicon nitride film but depends on the Si—H hydrogen concentration ratio.
  • the corrosion rate of calcium was fast, and it was difficult to measure the water vapor transmission rate with sufficient accuracy.
  • a silicon nitride film is not practical as a sealing film.
  • Samples 1, 4, and 7 were able to measure the water vapor transmission rate with sufficient accuracy. If it is this grade, it can be said that a silicon nitride film is practical as a sealing film. Therefore, the Si—H hydrogen concentration ratio of the silicon nitride film is preferably 40% or more.
  • the water vapor transmission rates of Samples 2 and 3 are reduced to a level approaching 2E-04 g / m 2 / day, which is the measurement limit of the calcium corrosion method. Therefore, the Si—H hydrogen concentration ratio of the silicon nitride film is more preferably 60% or more.
  • the film forming conditions for each sample are as follows. Plasma was stably generated by setting the pressure in the reactor to 10 Pa and the input power to 0.75 kW to 1.2 kW. In addition, the flow rate ratio of NH 3 to SiH 4 was set in the range of 1.0 to 2.0. As a result, a sample having a Si—H hydrogen concentration ratio of 40% or more could be obtained.
  • the Si—H hydrogen concentration As described above, by setting the Si—H hydrogen concentration to 40% or more of the total hydrogen concentration in the silicon nitride film, a silicon nitride film having a good gas barrier property can be obtained.
  • the Si—H hydrogen concentration ratio can be arbitrarily changed by changing the input power to the surface wave plasma CVD apparatus, the SiH 4 flow rate, and the NH 3 flow rate.
  • various resin substrates can be used as a base of the silicon nitride film. This is convenient for obtaining a flexible substrate including a resin substrate and a sealing film. In particular, when the substrate temperature is set to 120 ° C. or lower, the deterioration of the resin substrate can be suppressed.
  • FIG. 6B is a diagram showing a silicon nitride sample formed on a flexible substrate.
  • FIG. 6C is a diagram showing a measurement situation.
  • the silicon nitride film has excellent crack resistance. I understand.
  • the overall hydrogen concentration can be adjusted by adjusting the pressure in the reactor and the input power so that plasma is stably generated.
  • the silicon nitride film was formed by adjusting the pressure and input power so that the flow rate ratio of NH 4 to SiH 4 was in the range of 1.0 to 2.0.
  • a silicon nitride film having a total hydrogen concentration in the silicon nitride film of 3E22 atoms / cm 3 or more and a Si—H hydrogen concentration ratio of 40% or more can be obtained.
  • FIG. 7 is a diagram showing the measurement result of the film density in the silicon nitride film formed by the CCP-CVD method.
  • the film density is substantially the same.
  • the film formation temperature of Sample 4 is 100 ° C.
  • the film forming temperature of sample 12 is 180 ° C.
  • Sample 4 has a film density comparable to that of the high-temperature film formation using the CCP-CVD method, which is a conventional film formation method, that is, a gas barrier property, while being a low-temperature film formation.
  • the film density is substantially the same.
  • the film formation temperature of Sample 3 is 100 ° C.
  • the film forming temperature of sample 11 is 300 ° C. From these, it can be seen that Sample 3 has a film density comparable to that of the high-temperature film formation, that is, a gas barrier property, while being a low-temperature film formation.
  • a method of increasing the film density by high-temperature film formation has been adopted.
  • a silicon nitride film is formed on the resin substrate, it is preferable to form the silicon nitride film at a low temperature in order to avoid deterioration of the resin substrate.
  • the low temperature is, for example, 200 ° C. or lower, more preferably 120 ° C. or lower.
  • the stress of the silicon nitride film increases, and the resin substrate tends to warp. This is because the magnitude of the stress is affected by the temperature difference between the film forming temperature and room temperature.
  • the silicon nitride film may be cracked. Furthermore, since the decomposition of the source gas is accelerated in the high temperature film formation, hydrogen hardly remains in the silicon nitride film, and as a result, it is difficult to provide crack resistance.
  • the silicon nitride film of the present embodiment can exhibit a gas barrier property comparable to that of high-temperature film formation while being low-temperature film formation. Further, as described above, it has been found that the crack resistance of the silicon nitride film is determined not by the Si—H hydrogen concentration ratio (N—H hydrogen concentration ratio) but by the total hydrogen concentration.
  • the N—H hydrogen concentration ratio is 45% while the total hydrogen concentration is 3E + 22 atoms / cm 3 or more.
  • it may be preferably 30% or less.
  • the Si—H hydrogen concentration ratio may be 55% or more, preferably 70% or more.
  • FIG. 10 is a diagram showing the relationship between the heating temperature of the silicon nitride film and the hydrogen concentration in the silicon nitride film.
  • FIG. 10 (a) shows a sample film formed under the condition that the film forming method is CCP-CVD and the film forming temperature is 380 ° C.
  • FIG. 10 (b) shows the condition under which the film forming method is CCP-CVD and the film forming temperature is 180 ° C.
  • FIG. 10C shows a sample formed under the condition that the film formation method is SWP-CVD and the film formation temperature is room temperature.
  • a silicon nitride film was formed under each film forming condition, the formed silicon nitride film was heated at each temperature for 1 hour, and the hydrogen concentration of the heated silicon nitride film was measured. As the film formation temperature, the substrate temperature was measured.
  • the substrate temperature is room temperature.
  • the temperature at which the hydrogen concentration changes due to heat treatment is also 250. It is considered to be higher than ° C.
  • even a sample having a substrate temperature of room temperature has a higher temperature at which the hydrogen concentration changes due to the heat treatment than in a sample having a substrate temperature of 180 ° C. in the capacitively coupled plasma CVD method.
  • the temperature of the silicon nitride film does not exceed 250 ° C. and more preferably does not exceed 200 ° C. in the steps after the silicon nitride film forming step.
  • the electronic device of Embodiment 2 is an organic EL device provided with an organic EL element as an electronic element.
  • FIG. 11 is a cross-sectional view showing the structure of an organic EL device according to Embodiment 2 of the present invention.
  • the organic EL device 100 includes a first flexible substrate 110, an organic EL element 120, a second flexible substrate 130, and a sealing layer 140.
  • the first flexible substrate 110 includes a resin substrate 111 and a sealing film 112.
  • the resin substrate 111 is made of, for example, polyimide, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or cycloolefin polymer (COP).
  • the sealing film 112 is the silicon nitride film described in the first embodiment.
  • the organic EL element 120 includes a first electrode 121, an organic EL layer 122, and a second electrode 123.
  • the first electrode 121 is made of, for example, a light reflective conductive material. As such a material, for example, aluminum, silver, an aluminum alloy, and a silver alloy can be used.
  • the organic EL layer 122 includes a light emitting layer made of an organic material. Moreover, it is good also as including a positive hole injection layer, a positive hole transport layer, an electron injection layer, and an electron carrying layer as needed.
  • the second electrode 123 is made of, for example, a light transmissive conductive material. As such a material, for example, ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide) can be used.
  • the second flexible substrate 130 includes a resin substrate 131 and a sealing film 132.
  • the resin substrate 131 is made of, for example, polyimide, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or cycloolefin polymer (COP).
  • the sealing film 132 is the silicon nitride film described in the first embodiment.
  • the sealing layer 140 is made of, for example, a light transmissive resin material.
  • a material for example, an acrylic resin or an epoxy resin can be used.
  • both the first flexible substrate 110 and the second flexible substrate 130 include the silicon nitride film described in the first embodiment. Thereby, favorable gas barrier property can be ensured and the lifetime improvement of an organic EL device can be aimed at.
  • one of the first flexible substrate 110 and the second flexible substrate 130 may include a silicon nitride film.
  • the second flexible substrate 230 is a resin substrate
  • the sealing layer 240 includes a sealing film 241 and a resin layer 242.
  • the sealing film 241 is the silicon nitride film described in Embodiment 1.
  • the resin layer 242 is made of, for example, a light transmissive resin material. As such a material, for example, an acrylic resin or an epoxy resin can be used.
  • the second flexible substrate 330 is a resin substrate.
  • the first flexible substrate 110, the second flexible substrate 130, and the sealing layer 240 may include sealing films 112, 132, and 241 respectively. Good.
  • at least one of the sealing films 112, 132, and 241 may be the silicon nitride film described in the first embodiment.
  • the Si—H hydrogen concentration ratio of the sealing films 112 and 132 may be higher than the Si—H hydrogen concentration ratio of the sealing film 241.
  • the sealing films 112 and 132 exist at positions where moisture can easily enter from the outside as compared with the sealing film 241.
  • the lifetime of the organic EL device can be extended by enhancing the gas barrier property of the sealing film present at a position where moisture can easily enter from the outside.
  • the total hydrogen concentration of the sealing films 112 and 132 may be higher than the total hydrogen concentration of the sealing film 241.
  • the sealing film 112 and the sealing film 132 have a larger curvature when the organic EL device is bent than the sealing film 241.
  • the lifetime of the organic EL device can be extended by increasing the crack resistance of the sealing film that has a large curvature when the organic EL device is bent.
  • the organic EL device 400 may be a bottom emission type in which the emitted light from the organic EL element 120 is extracted to the outside through the resin substrate 111, or the emitted light from the organic EL element 120 to the outside through the resin substrate 131. It is good also as a top emission type taken out.
  • the N—H hydrogen concentration ratio of the sealing film 112 is lower than the N—H hydrogen concentration ratio of the sealing film 241, and the N—H hydrogen concentration ratio of the sealing film 241 is It may be lower than the NH hydrogen concentration ratio.
  • the sealing film 112 exists at a position where external light is more easily incident than the sealing film 241.
  • the sealing film 241 exists at a position where external light is more likely to enter than the sealing film 132.
  • the lifetime of the organic EL device can be extended by increasing the weather resistance of the sealing film present at a position where external light is likely to be incident.
  • the N—H hydrogen concentration ratio of the sealing film 132 is lower than the N—H hydrogen concentration ratio of the sealing film 241, and the N—H hydrogen concentration ratio of the sealing film 241 is It may be lower than the N—H hydrogen concentration ratio of 112.
  • the sealing film 132 exists at a position where external light is more easily incident than the sealing film 241. Further, the sealing film 241 exists at a position where external light is more likely to enter than the sealing film 112. The lifetime of the organic EL device can be extended by increasing the weather resistance of the sealing film present at a position where external light is likely to be incident.
  • the second flexible substrate 130 does not exist, and the sealing layer 240 may serve to seal the upper surface side of the organic EL element 120.
  • a single organic EL element may exist instead of a single one.
  • a plurality of organic EL elements exist, and one organic EL element constitutes one subpixel.
  • FIG. 16 illustrates the configuration of an organic EL device for display applications. In the figure, one subpixel appears.
  • the organic EL device 600 includes the thin film transistor 10 on the sealing film 112.
  • the thin film transistor 10 includes a gate electrode 11, a gate insulating film 12, a source / drain electrode 13, and an oxide semiconductor film 14.
  • the oxide semiconductor film 14 is made of, for example, IGZO (Indium Gallium Zinc Oxide).
  • the organic EL device 600 further includes a sealing film 15 that covers the thin film transistor 10 and an interlayer insulating film 16 disposed on the sealing film 15.
  • the sealing film 15 and the interlayer insulating film 16 have a contact hole 16a.
  • the organic EL device 600 further includes an organic EL element 120 in a region partitioned by the partition wall 17 on the interlayer insulating film 16.
  • the organic EL element 120 includes a first electrode 121, an organic EL layer 122, and a second electrode 123. A part of the first electrode 121 enters the contact hole 16 a and is connected to the source / drain electrode 13 of the thin film transistor 10.
  • the organic EL layer 122 includes a hole injection layer 21, a hole transport layer 22, an organic light emitting layer 23, and an electron transport layer 24.
  • the organic EL device 600 further includes a sealing layer 240 on the organic EL element 120 and a sealing film 132 on the sealing layer 240.
  • the sealing layer 240 includes a sealing film 241 and a resin layer 24
  • the organic EL device 600 includes the sealing films 112, 15, 241, and 132. These may be the silicon nitride films described in the first embodiment.
  • the entire hydrogen concentration of the sealing film 112 may be lower than the entire hydrogen concentration of the sealing film 132.
  • the electrical properties of the oxide semiconductor film 14 are changed. This causes a problem such as a threshold shift of the thin film transistor 10.
  • the sealing film 112 is present at a position closer to the oxide semiconductor film 14 than the sealing film 132.
  • the total hydrogen concentration of the sealing film 15 may be lower than the total hydrogen concentration of the sealing film 132.
  • the sealing film 15 exists at a position closer to the oxide semiconductor film 14 than the sealing film 132.
  • FIG. 17 is a cross-sectional view showing the manufacturing process of the organic EL device according to the embodiment of the invention.
  • a first flexible substrate 110 having a sealing film 112 formed on a resin substrate 111 is prepared (FIG. 17A).
  • the sealing film 112 may be a silicon nitride film, or may be formed by the film forming method described in Embodiment 1.
  • the organic EL element 120 is formed on the first flexible substrate 110 using a known method (FIG. 17B).
  • the first electrode 121, the organic EL layer 122, and the second electrode 123 are formed by a vacuum deposition method, a sputtering method, a coating method, or the like, respectively.
  • a sealing film 241 is formed on the organic EL element 120 (FIG. 17C).
  • the sealing film 241 may be a silicon nitride film or may be formed by the film formation method described in Embodiment 1.
  • a resin layer 242 is formed on the sealing film 241, and the second flexible substrate 130 is attached on the resin layer 242 (FIG. 17D).
  • the sealing film 132 of the second flexible substrate 130 may be a silicon nitride film, or may be formed by the film forming method described in the first embodiment.
  • FIG. 18 and FIG. 19 are diagrams showing a manufacturing process of an organic EL device according to Modification 5 of the embodiment of the present invention.
  • the thin film transistor 10 is formed on the sealing film 112 using a known method (FIG. 18A).
  • a sealing film 15 is formed on the thin film transistor 10 (FIG. 18B).
  • the sealing film 15 may be a silicon nitride film, or may be formed by the film forming method described in the first embodiment.
  • An interlayer insulating film 16 is formed on the sealing film 15 using a known method, and a contact hole 16a is formed on the sealing film 15 and the interlayer insulating film 16 using a known method.
  • the first electrode 121 is formed using this method (FIG. 18C).
  • a partition wall 17 is formed on the interlayer insulating film 16 using a known method, an organic EL layer 122 is formed on the first electrode 121, and a second electrode 123 is formed on the organic EL layer 122 (FIG. 19A). )). Thereby, the organic EL element 120 is formed.
  • a sealing film 241 is formed on the organic EL element 120 (FIG. 19B).
  • the sealing film 241 may be a silicon nitride film or may be formed by the film formation method described in Embodiment 1.
  • the electronic device according to the third embodiment is an optical reflection device including an optical reflection element as an electronic element.
  • FIG. 20 is a perspective view showing an optical reflecting element according to Embodiment 3 of the present invention.
  • the optical reflection device 700 is an example of MEMS (Micro Electro Mechanical Systems).
  • the optical reflection device 700 is provided in the movable portion 704 that rotates about the rotation shaft 703, the drive portion 705 that is connected to the movable portion 704, the frame body 706 that is connected to the drive portion 705, and the movable portion 704.
  • the movable part 704, the drive part 705, the frame body 706, and the reflection part 702 function as an optical reflection element.
  • the reflection part 702 is formed of a film made of a material that reflects light such as metal (Ag-based material) provided on the surface of the movable part 704, and reflects the light beam irradiated to the movable part 704.
  • a material that reflects light such as metal (Ag-based material) provided on the surface of the movable part 704, and reflects the light beam irradiated to the movable part 704.
  • an electrode is provided on the outer peripheral portion of the surface of the movable portion 704, and a drive signal that is connected to the drive portion 705 and drives the drive portion 705 is input.
  • the drive unit 705 includes a substrate made of silicon, a lower electrode formed on the substrate, a piezoelectric layer made of a piezoelectric material such as PZT (lead zirconate titanate) formed on the lower electrode, And an upper electrode formed on the body layer.
  • a substrate made of silicon
  • a lower electrode formed on the substrate
  • a piezoelectric layer made of a piezoelectric material such as PZT (lead zirconate titanate) formed on the lower electrode
  • PZT lead zirconate titanate
  • the substrate is processed by ICP (Inductively Coupled Plasma) dry etching, so that the movable portion 704, the driving portion 705, the frame body 706 can be formed.
  • ICP Inductively Coupled Plasma
  • the piezoelectric layer expands and contracts in the plane direction due to the inverse piezoelectric effect.
  • the force generated in the piezoelectric layer acts as a moment in the thickness direction of the drive unit 705, and the drive unit 705 is bent.
  • the inclination of the movable portion 704 connected to the drive portion 705 varies, and the movable portion 704 rotates about the rotation shaft 703.
  • the silicon nitride film according to the first embodiment may be formed on a part of the upper surface of the optical reflecting element (a region indicated by shading in the drawing) and used as a sealing layer.
  • the silicon nitride film is formed on the entire upper surface of the optical reflection element except for the reflection portion 702 and the electrode extraction portion (pad portion) 707 provided on the frame body 706. That is, the reflection portion 702 and the electrode extraction portion 707 are non-forming regions of the sealing layer.
  • the non-sealing region of the sealing layer is formed by partially removing the silicon nitride film by photolithography and etching after forming the silicon nitride film on the upper surface of the optical reflection element.
  • a silicon nitride film may be formed on the upper surface of the optical reflection element, and the reflection portion 702 may be formed thereon.
  • the silicon nitride film according to Embodiment 1 as the sealing layer of the optical reflection device 700, it is possible to ensure good gas barrier properties and to suppress deterioration of the optical reflection element due to moisture.
  • the optical reflection element further includes a drive unit 832 having one end connected to the outside of the frame 706 of the optical reflection device 800 shown in FIG. 21 and a frame 833 connected to the other end of the drive unit 832. It may be.
  • the other end of the drive unit 832 is connected to the frame body 833.
  • the drive unit 832 is connected to the frame body 706 in a direction substantially orthogonal to the drive unit 705.
  • the drive unit 832 is made of a substrate made of silicon, a lower electrode formed on the substrate, and a piezoelectric material such as PZT (lead zirconate titanate) formed on the lower electrode. And a top electrode formed on the piezoelectric layer.
  • the piezoelectric layer expands and contracts in a plane direction perpendicular to the thickness direction in which the lower electrode, the piezoelectric layer, and the upper electrode are stacked due to the inverse piezoelectric effect.
  • the force generated in the piezoelectric layer acts as a moment in the thickness direction of the drive unit 832 and the drive unit 832 bends.
  • the inclination of the frame body 706 connected to the drive unit 832 varies, and the frame body 706 rotates about the rotation shaft 835.
  • the sealing film according to one embodiment of the present invention can be used in the fields of food, medicine, and electronics.

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PCT/JP2014/002723 2013-05-24 2014-05-23 封止膜、有機ｅｌデバイス、可撓性基板、および、封止膜の製造方法 Ceased WO2014188731A1 (ja)

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US14/768,858 US9601718B2 (en) 2013-05-24 2014-05-23 Barrier film, organic el device, flexible substrate, and method for manufacturing barrier film
EP14801311.3A EP3006597B1 (en) 2013-05-24 2014-05-23 Organic electroluminescent device
JP2015518089A JP6280109B2 (ja) 2013-05-24 2014-05-23 封止膜、有機ｅｌデバイス、可撓性基板、および、封止膜の製造方法
CN201480010098.7A CN105637117A (zh) 2013-05-24 2014-05-23 密封膜、有机el器件、挠性基板以及密封膜的制造方法
US15/428,603 US10256437B2 (en) 2013-05-24 2017-02-09 Barrier film, organic el device, flexible substrate, and method for manufacturing barrier film
US16/288,958 US10903452B2 (en) 2013-05-24 2019-02-28 Barrier film, organic EL device, flexible substrate, and method for manufacturing barrier film
US17/129,045 US11411203B2 (en) 2013-05-24 2020-12-21 Barrier film, organic el device, flexible substrate, and method for manufacturing barrier film
US17/812,647 US11903241B2 (en) 2013-05-24 2022-07-14 Barrier film, organic EL device, flexible substrate, and method for manufacturing barrier film

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US15/428,603 Continuation US10256437B2 (en) 2013-05-24 2017-02-09 Barrier film, organic el device, flexible substrate, and method for manufacturing barrier film

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US20220359848A1 (en) 2022-11-10
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US11411203B2 (en) 2022-08-09
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US20160013445A1 (en) 2016-01-14
CN105637117A (zh) 2016-06-01
US10903452B2 (en) 2021-01-26
US20210111375A1 (en) 2021-04-15
US11903241B2 (en) 2024-02-13
US20190198813A1 (en) 2019-06-27
US10256437B2 (en) 2019-04-09
EP3006597A4 (en) 2016-07-13
US20170155090A1 (en) 2017-06-01
JP6691149B2 (ja) 2020-04-28

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