WO2014136836A1 - 接着フィルム、ダイシングシート一体型接着フィルム、バックグラインドテープ一体型接着フィルム、バックグラインドテープ兼ダイシングシート一体型接着フィルム、積層体、積層体の硬化物、および半導体装置、並び半導体装置の製造方法 - Google Patents

接着フィルム、ダイシングシート一体型接着フィルム、バックグラインドテープ一体型接着フィルム、バックグラインドテープ兼ダイシングシート一体型接着フィルム、積層体、積層体の硬化物、および半導体装置、並び半導体装置の製造方法 Download PDF

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Publication number
WO2014136836A1
WO2014136836A1 PCT/JP2014/055629 JP2014055629W WO2014136836A1 WO 2014136836 A1 WO2014136836 A1 WO 2014136836A1 JP 2014055629 W JP2014055629 W JP 2014055629W WO 2014136836 A1 WO2014136836 A1 WO 2014136836A1
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Prior art keywords
adhesive film
terminal
resin
terminals
weight
Prior art date
Application number
PCT/JP2014/055629
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English (en)
French (fr)
Japanese (ja)
Inventor
研三 前島
Original Assignee
住友ベークライト株式会社
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Publication date
Application filed by 住友ベークライト株式会社 filed Critical 住友ベークライト株式会社
Priority to CN201480012073.0A priority Critical patent/CN105027273B/zh
Priority to KR1020157022886A priority patent/KR101735983B1/ko
Publication of WO2014136836A1 publication Critical patent/WO2014136836A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C08G59/621—Phenols
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    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
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    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9211—Parallel connecting processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector

Definitions

  • the present invention relates to an adhesive film, a dicing sheet integrated adhesive film, a back grind tape integrated adhesive film, a back grind tape and dicing sheet integrated adhesive film, a laminate, a cured product of the laminate, and a semiconductor device, It relates to a manufacturing method.
  • This application claims priority based on Japanese Patent Application No. 2013-045020 filed in Japan on March 7, 2013, the contents of which are incorporated herein by reference.
  • solder bonding is widely used to obtain electrical connections between electronic components in these semiconductor devices and between electronic components and circuit components.
  • solder bonding for example, a conductive bonding portion between semiconductor chips, a conductive bonding portion between a semiconductor chip such as a package mounted with a flip chip and a circuit board, and a semiconductor wafer on which a semiconductor chip and an electronic circuit are formed are connected. Examples thereof include a junction and a conduction junction between circuit boards.
  • the solder joint is generally sealed with a resin material.
  • a sealing resin generally called an underfill material is injected between a semiconductor chip and a circuit board (underfill sealing).
  • the liquid sealing resin (underfill material) is supplied after the solder joint, and the solder joint is cured by curing it. Is reinforced.
  • the solder joints have a narrow pitch / narrow gap. Therefore, even if liquid sealing resin (underfill material) is supplied after solder joining, the liquid sealing between the gaps There is a problem that the stop resin (underfill material) does not spread and it becomes difficult to completely fill the resin.
  • NCF Non-Conductive-Film
  • An object of the present invention is to provide an adhesive film that achieves both sufficient transparency and reliability of solder joints, and improves the bondability in solder joints with a narrower pitch / narrow gap and the yield in the manufacture of semiconductor devices. And supplying a semiconductor device with improved solder joint reliability.
  • Such an object is achieved by the present inventions (1) to (23) below.
  • the first terminal has a width of 3 ⁇ m or more and 100 ⁇ m or less, and the first terminal is a low melting point metal that covers at least a part of the terminal surface.
  • the width of the first terminal is A and the width of the metal composition is B, 0.6 ⁇ A / B ⁇ 1.4 is satisfied, and B is 2 ⁇ m or more and 170 ⁇ m or less.
  • the distance between the metal compositions of the first terminals adjacent to each other is 3 ⁇ m or more and 60 ⁇ m or less
  • the adhesive film is made of a resin composition containing 10% by weight or more and 70% by weight or less of the filler.
  • the surface roughness Ra is 0.03 ⁇ m or more and 1.0 ⁇ m or less.
  • the adhesive film is characterized in that the surface roughness Ra is an arithmetic average roughness measured according to Japanese Industrial Standard JIS-B0601. (2)
  • the adhesive film according to (1), wherein the light transmittance at 700 nm of the adhesive film is 15% or more and 100% or less.
  • the ratio [C / D] of the surface roughness Ra to the light transmittance is 1.8.
  • the adhesive film according to (1) or (2) which is ⁇ 10 ⁇ 2 ⁇ m /% or less.
  • the resin composition includes an epoxy resin, a curing agent, and a film-forming resin.
  • a width of the first terminal is not less than 3 ⁇ m and not more than 100 ⁇ m,
  • the first terminal has a low melting point metal composition covering at least part of the terminal surface;
  • the width of the first terminal is A and the width of the metal composition is B, 0.6 ⁇ A / B ⁇ 1.4 is satisfied, B satisfies 2 ⁇ m to 170 ⁇ m, and the adjacent first A laminate having a distance between the metal compositions of the terminals of 3 to 60 ⁇ m.
  • (16) having a plurality of the electronic components, and a plurality of adhesive films according to any one of (1) to (11) interposed between the plurality of electronic components and the circuit components The laminated body of description.
  • An electronic component having a plurality of first terminals on the surface, a circuit component having a plurality of second terminals corresponding to the first terminals, and interposed between the electronic component and the circuit components.
  • the width of the first terminal is 3 ⁇ m or more and 100 ⁇ m or less
  • the first terminal has a low melting point metal composition covering at least a part of the terminal surface
  • the width of the first terminal is A
  • the width of the metal composition is B, 0.6 ⁇ A / B ⁇ 1.4 is satisfied, B satisfies 2 ⁇ m or more and 170 ⁇ m or less, and the distance between the metal compositions of the adjacent first terminals is Is a cured product of a laminate, wherein the cured product is 3 ⁇ m or more and 60 ⁇ m or less.
  • the electronic component according to any one of (1) to (11), between an electronic component having a plurality of first terminals on a surface and a circuit component having a plurality of second terminals corresponding to the terminals.
  • the width of the first terminal is 3 ⁇ m or more and 100 ⁇ m or less
  • the first terminal has a low melting point metal composition covering at least a part of the terminal surface
  • the width of the first terminal is A
  • the width of the metal composition is B, 0.6 ⁇ A / B ⁇ 1.4 is satisfied, B satisfies 2 ⁇ m or more and 170 ⁇ m or less, and the distance between the metal compositions of the adjacent first terminals is Is 3 ⁇ m or more and 60 ⁇ m or less.
  • an adhesive film that achieves both sufficient transparency and reliability of solder joints, improves jointability in solder joints with a narrower pitch / narrow gap, and yield in the manufacture of electronic components. And a semiconductor device with improved solder joint reliability.
  • FIG. 1A is a schematic view showing an example of a semiconductor device 100 manufactured using the adhesive film of the present invention (FIG. 1A is a plan view, and FIG. 1B is a cross-sectional view taken along line XX in FIG. 1A).
  • FIG. 2A is a schematic diagram showing an example of an electronic component 20 used in the semiconductor device 100 of the present invention (FIG. 2A is a plan view, and FIG. 2B is a cross-sectional view taken along line YY in FIG. 2A). is there.
  • It is a schematic diagram which shows an example of the manufacturing method of the semiconductor device 100 of this invention.
  • FIG. 1 It is a schematic diagram which shows an example of the manufacturing method of the semiconductor device 100 of this invention. It is sectional drawing which showed one form of the dicing tape integrated adhesive film of this invention. It is sectional drawing which showed one form of the back grind tape and dicing tape integrated adhesive film of this invention. It is sectional drawing which showed one form of the back grind tape and dicing tape integrated adhesive film of this invention. It is sectional drawing which shows the manufacturing process about the semiconductor device of this invention. It is sectional drawing which shows the manufacturing process about the semiconductor device of this invention. It is sectional drawing which shows the manufacturing process about the semiconductor device of this invention.
  • the adhesive film of the present invention is interposed between the electronic component 20 having a plurality of first terminals 21 on the surface and the circuit component 30 having a plurality of second terminals 31 corresponding to the terminals,
  • the width of the first terminal is A and the width of the metal composition is B
  • 0.6 ⁇ A / B ⁇ 1.4 And B satisfies 2 ⁇ m or more and 170 ⁇ m or less
  • the distance between the metal compositions of the adjacent first terminals is 3 ⁇ m or more and 60 ⁇ m or less
  • the adhesive film contains 10% by weight or more of the filler. It consists of a resin composition containing 70% by weight or less, and has a rough surface. Ra is equal to or is 1.0 ⁇ m or less than 0.03 .mu.m.
  • the dicing sheet integrated adhesive film of the present invention was obtained by laminating a dicing sheet and the above adhesive film.
  • the laminated body 37 of this invention has the electronic component 20 which has a some 1st terminal on the surface, and the said adhesive film 10 provided in the 1st terminal side of the said electronic component.
  • the cured product 38 of the laminate of the present invention includes the electronic component 20, the circuit component 31 having a plurality of second terminals 31 corresponding to the first terminals 21, and the electronic component and the circuit component. And a cured product layer 80 of the adhesive film interposed therebetween.
  • the semiconductor device 100 of the present invention includes a cured product of the laminate.
  • the adhesive film 10, the laminate 37, the cured product 38 of the laminate, and the semiconductor device 100 of the present invention will be described in detail based on the embodiments shown in the accompanying drawings.
  • FIG. 1 is a schematic view showing an example of a semiconductor device 100 manufactured using the adhesive film 10 of the present invention
  • FIG. 1A is a plan view
  • FIG. 1B is a plan view in FIG. XX sectional view
  • the upper side in FIG. 1 is referred to as “upper” and the lower side is referred to as “lower”.
  • a semiconductor device 100 shown in FIG. 1 includes a semiconductor chip (corresponding to an example of an electronic component of the present invention) 20 and an interposer (corresponding to an example of a circuit component of the present invention) 30 that supports the semiconductor chip 20. And a plurality of conductive bumps 70.
  • the planar view shape of the semiconductor chip 20 is a square shape as shown in FIG.
  • the semiconductor chip 20 has a plurality of terminals 21 (corresponding to an example of the first terminal of the present invention) on the lower surface thereof for electrical connection with the interposer 30.
  • the terminal 21 is formed on the lower surface of the semiconductor chip 20 and is not particularly limited.
  • the terminal 21 is made of a conductive metal material such as copper.
  • the interposer 30 is an insulating substrate, and is made of various resin materials such as polyimide, epoxy, cyanate, bismaleimide triazine (BT resin).
  • the plan view shape of the interposer 30 is square as shown in FIG.
  • the interposer 30 has a plurality of terminals (corresponding to the second terminal of the present invention) 31 made of a conductive metal material such as copper, for example, on the upper surface (one surface). ing.
  • the terminal 31 is provided on the upper surface of the interposer 30 so as to correspond to the terminal 21 provided on the semiconductor chip 20 in the semiconductor device 100.
  • the corresponding terminal 21 and terminal 31 are electrically connected via the connection portion 81.
  • the connection part 81 is comprised with the electroconductive metal.
  • the conductive metal constituting the connecting portion 81 is configured by deforming a low melting point metal composition that covers at least a part of the surface of the terminal 21 provided in advance on the surface of the terminal 21 provided in the semiconductor chip 20, for example. It is a thing.
  • the shape of the terminal 21 is not particularly limited, but a metal post having a pillar shape can be used.
  • the metal post is not particularly limited as long as it is made of a conductive metal, but copper, nickel, titanium, tantalum, tungsten, gold, or the like can be used.
  • a thin film made of metal can be provided between the terminal 21 and the metal composition.
  • having a thin film made of gold or the like has an effect of promoting the wettability of the metal composition, and having a barrier metal layer such as nickel diffuses the metal composition into the terminal 21. It has the effect of preventing this.
  • Such a thin film may be a single layer or may have a plurality of layers. Moreover, when it has several layers, you may have several layers comprised from the same metal, and you may have several layers comprised from a different metal.
  • such a thin film is preferably 0.01 ⁇ m or more and 2 ⁇ m or less, and more preferably 0.05 ⁇ m or more and 1 ⁇ m or less.
  • the terminal 31 may be provided with a low-melting-point metal composition in advance, or the terminal 31 itself may be configured with a low-melting-point metal composition that constitutes the connection portion 81, or these may be combined.
  • Such a low-melting-point metal composition is not particularly limited as long as it has conductivity and has a low-melting point.
  • it is selected from the group consisting of tin, silver, lead, zinc, bismuth, indium, and copper. And alloys containing at least two or more of them.
  • the melting point of the metal is preferably 280 ° C. or lower, more preferably 240 ° C. or lower.
  • the terminal 31 is installed in a recess formed in the interposer 30.
  • the terminal 21 has a pillar shape protruding from the semiconductor chip 20.
  • the terminal 21 is a metal post and has a cylindrical shape.
  • the terminal 21 is not limited to the cylindrical shape, and may have a rectangular parallelepiped shape, a conical shape, or the like.
  • the interposer 30 is formed with a plurality of vias (through holes: through holes) (not shown) penetrating in the thickness direction.
  • Each bump 70 has one end (upper end) electrically connected to a part of the terminal 31 through each via, and the other end (lower end) protruding from the lower surface (the other surface) of the interposer 30. Yes.
  • a portion of the bump 70 protruding from the interposer 30 has a substantially spherical shape (Ball shape).
  • the bumps 70 are mainly composed of a brazing material such as solder, silver brazing, copper brazing, or phosphor copper brazing.
  • the gap between the semiconductor chip 20 and the interposer 30 is filled with a sealing material made of various resin materials, and a sealing layer 80 is formed by a cured product of this sealing material.
  • the sealing layer 80 has a function of improving the bonding strength between the semiconductor chip 20 and the interposer 30 and a function of preventing entry of foreign matter, moisture, and the like into the gap.
  • the adhesive film 10 of the present invention is applied to the formation of the sealing layer 80.
  • the semiconductor device 100 has been described focusing on the embodiment illustrated in FIG. 1, but is not limited to the embodiment.
  • a printed wiring board such as an interposer, a rigid substrate, a flexible substrate, or a rigid flexible substrate may be used as the electronic component 20 in addition to a semiconductor chip.
  • the circuit component 30 may be a semiconductor chip, a semiconductor wafer on which an electronic circuit is built and a silicon substrate, or a printed wiring board such as a rigid substrate, a flexible substrate, or a rigid flexible substrate. it can.
  • the square shape was demonstrated about the electronic component and the circuit component, the rectangular shape can also be used.
  • the semiconductor device 100 of the present invention has a plurality of semiconductor chips stacked on the interposer in the thickness direction, and a junction that electrically joins between the plurality of semiconductor chips and between the semiconductor chip and the interposer.
  • an electronic component in which the adhesive film of the present invention is applied to these sealing layers is applied to such an electronic component.
  • a TSV chip Through Silicon Bear Chip
  • a semiconductor chip can be suitably used as a semiconductor chip.
  • FIG. 2 is a schematic diagram showing an example of an electronic component 20 included in the semiconductor device 100 manufactured using the adhesive film 10 of the present invention (FIG. 2A is a plan view, and FIG. 2B is a diagram).
  • FIG. 1 is a sectional view taken along line YY in FIG. In the following description, the upper side in FIG. 2 is referred to as “upper” and the lower side is referred to as “lower”.
  • An electronic component 20 shown in FIG. 1 is a semiconductor chip and has a plurality of first terminals 21. Under the plurality of terminals, a low melting point metal composition 22 covering at least a part of the terminal surface is provided.
  • the first terminal has a columnar pillar shape, but is not limited to such a shape, and may have a rectangular parallelepiped shape, a conical shape, or the like. Further, the first terminal is not limited to the one having a convex shape from the electronic component, and can be installed in a concave portion provided in the electronic component, like the interposer 30. In such a case, it is preferable to form the metal composition in a convex shape.
  • the electronic component 20 according to the present invention satisfies 0.6 ⁇ A / B ⁇ 1.4, where A is the width of the first terminal and B is the width of the metal composition. More preferably, 0.8 ⁇ A / B ⁇ 1.2.
  • A is the width of the first terminal and B is the width of the metal composition. More preferably, 0.8 ⁇ A / B ⁇ 1.2.
  • B is 2 ⁇ m or more and 170 ⁇ m or less, preferably 4 ⁇ m or more and 150 ⁇ m or less, more preferably 10 ⁇ m or more and 100 ⁇ m or less.
  • the junction area between terminals becomes sufficient and the reliability of a solder joint part can be improved.
  • the present invention provides the width of the first terminal and the width of the metal composition having the above-described configuration and sufficient transparency of the adhesive film when joining the electronic component and the circuit component. Since the shape and arrangement of the first terminals in the electronic component can be sufficiently recognized through the adhesive film of the present invention, it is possible to prevent displacement during bonding. Thereby, the reliability of the junction part in the semiconductor device of this invention can be improved more.
  • the width of the first terminal indicates the longest distance in the cross section having the largest area among the cross sections formed perpendicular to the height direction of the terminal (see FIG. 2).
  • the diameter of the cross section having the largest area in the cross section is the width
  • the terminal is elliptical
  • the long diameter of the cross section having the largest area in the cross section is the width
  • the terminal is When it has a rectangular parallelepiped shape, the diagonal line of the cross section having the largest area in the cross section is the width.
  • the width of the metal composition indicates the longest distance in the cross section as in the first terminal (see FIG. 2).
  • the distance between the metal compositions is 3 ⁇ m or more and 60 ⁇ m or less, preferably 5 ⁇ m or more and 50 ⁇ m or less, more preferably 7 ⁇ m or more and 30 ⁇ m or less.
  • the distance between the first terminals is preferably 5 ⁇ m or more and 62 ⁇ m or less, more preferably 7 ⁇ m or more and 52 ⁇ m or less, and further preferably 9 ⁇ m or more and 32 ⁇ m or less.
  • the adhesive film 10 of the present invention is interposed between an electronic component 20 having a plurality of first terminals 21 on a surface and a circuit component 30 having a plurality of second terminals 31 corresponding to the terminals.
  • An inter-terminal connecting adhesive film 10 for electrically connecting one terminal and a second terminal the adhesive film comprising a resin composition containing 10 wt% or more and 70 wt% or less of a filler, and having a rough surface
  • the thickness Ra is 0.03 ⁇ m or more and 1.0 ⁇ m or less. Since the adhesive film 10 has the above-described configuration, sufficient transparency and reliability of the solder joint portion are compatible, and the bondability at the solder joint portion with a narrower pitch / narrow gap is reduced.
  • the adhesive film 10 is made of a resin composition containing a filler, so that a sealing layer having a uniform thickness can be formed between the electronic component to be bonded and the circuit component. The reliability of the part can be improved.
  • the said adhesive film when joining the said electronic component and the said circuit component, it can prevent position shift by having sufficient transparency. . That is, it is assumed that the adhesive film is bonded in a state in which the electronic component and the circuit component are bonded in advance to the surface of the electronic component. Affixed to cover.
  • the shape and arrangement of the first terminals in the electronic component can be sufficiently recognized through the adhesive film.
  • the displacement can be sufficiently prevented. Thereby, it is possible to prevent a connection failure due to the influence of the positional deviation. Further, the bonding area between the terminals becomes sufficient, and the reliability of the solder bonding portion can be improved.
  • the position shift it is possible to prevent the productivity from being lowered and to improve the yield in manufacturing the semiconductor device. That is, since the surface roughness Ra is smaller than the width of the first terminal and the width of the metal composition, the shape and arrangement of the plurality of first terminals included in the electronic component through the adhesive film are sufficiently recognized. Therefore, misalignment can be prevented.
  • the adhesive film is composed of a resin composition containing a filler.
  • a curable resin composition is preferable.
  • the curable resin composition include a thermosetting resin composition that is cured by heating and a curable resin composition that is cured by irradiation with actinic radiation. Among these, thermosetting that is cured by heating. It is preferable to use a resin composition.
  • a thermosetting resin composition that cures by heating is excellent in mechanical properties after curing and in storage stability.
  • thermosetting resin composition that cures by heating contains a thermosetting resin component, and in addition to the thermosetting resin component, a compound having a flux function, a film-forming resin, a curing agent, and a curing accelerator, if necessary. Agents, silane coupling agents, and the like.
  • thermosetting resin component is not particularly limited as long as it is melted and cured by heating, but those that can be used as an adhesive component for manufacturing a semiconductor device are usually used. it can.
  • a thermosetting resin component is not particularly limited.
  • epoxy resin, phenoxy resin, silicone resin, oxetane resin, phenol resin, (meth) acrylate resin, polyester resin (unsaturated polyester resin), diallyl phthalate examples thereof include resins, maleimide resins, polyimide resins (polyimide precursor resins), bismaleimide-triazine resins, and the like.
  • thermosetting resin containing at least one selected from the group consisting of epoxy resins, (meth) acrylate resins, phenoxy resins, polyester resins, polyimide resins, silicone resins, maleimide resins, and bismaleimide-triazine resins.
  • an epoxy resin is preferable from the viewpoint of excellent curability and storage stability, heat resistance of a cured product, moisture resistance, and chemical resistance.
  • an epoxy resin By using an epoxy resin, the adhesion between the electronic component and the circuit component can be further strengthened, whereby the reliability of the connection portion between the first terminal and the second terminal in the semiconductor device of the present invention. Can be improved.
  • the volume shrinkage by hardening is small, the thickness uniformity in the case of sealing layer formation becomes more favorable.
  • these curable resin components may be used individually by 1 type, or may use 2 or more types together.
  • the epoxy resin is not particularly limited, and any epoxy resin that is liquid at room temperature and solid at room temperature can be used. It is also possible to use an epoxy resin that is liquid at room temperature and an epoxy resin that is solid at room temperature. When a liquid epoxy resin is used, particularly when a liquid epoxy resin is used alone, it is preferable that the curable resin composition further contains a film-forming resin component. Although it does not specifically limit as a liquid epoxy resin at room temperature (25 degreeC), A bisphenol A type epoxy resin, a bisphenol F type epoxy resin, etc. are mentioned, Among these, it can use combining 1 type or 2 types. .
  • the epoxy equivalent of the epoxy resin that is liquid at room temperature is preferably 150 to 300 g / eq, more preferably 160 to 250 g / eq, and particularly preferably 170 to 220 g / eq.
  • the epoxy equivalent is less than the lower limit, depending on the type of epoxy resin used, the shrinkage of the cured product tends to increase, and the semiconductor device including the adhesive film and the electronic device including the semiconductor device may be warped. There is.
  • it exceeds the said upper limit when it is set as the structure which uses a film-forming resin component together with a curable resin composition, it may show the tendency for the reactivity with a film-forming resin component, especially a polyimide resin to fall. .
  • the epoxy resin solid at room temperature (25 ° C.) is not particularly limited, but bisphenol A type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, glycidylamine type epoxy resin. , A glycidyl ester type epoxy resin, a trifunctional epoxy resin, a tetrafunctional epoxy resin, and the like. Among these, one kind or two or more kinds can be used in combination. Among these, solid trifunctional epoxy resins, cresol novolac type epoxy resins, and the like are preferably used.
  • the epoxy equivalent of a solid epoxy resin at room temperature is preferably 150 to 3000 g / eq, more preferably 160 to 2500 g / eq, and particularly preferably 170 to 2000 g / eq.
  • the softening point of the epoxy resin that is solid at room temperature is preferably about 40 to 120 ° C., more preferably about 50 to 110 ° C., and particularly preferably about 60 to 100 ° C. When the softening point is within the above range, the tackiness of the resin composition can be suppressed, and the adhesive film can be easily handled.
  • the compounding quantity of the curable resin component mentioned above can be suitably set according to the form of the curable resin composition to be used.
  • the blending amount of the curable resin component is preferably 5% by weight or more, more preferably 10% by weight or more, and further preferably 15% by weight or more in the resin composition. It is particularly preferably 20% by weight or more. Further, it is preferably 90% by weight or less, more preferably 85% by weight or less, further preferably 80% by weight or less, still more preferably 75% by weight or less, and 65% by weight or less. It is still more preferable, and it is especially preferable that it is 60 weight% or less.
  • the blending amount of the curable resin component in the resin composition is within the above range, it is possible to sufficiently secure the adhesive strength between the electronic component and the circuit component.
  • the resin composition further contains a film-forming resin component in addition to the curable resin component.
  • a film-forming resin component By including the film-forming resin component, the film-forming property of the adhesive film is improved, and the productivity is improved.
  • the thickness uniformity of the adhesive film can be improved, and the thickness uniformity when the sealing layer is formed can also be improved.
  • a film-forming resin component is not particularly limited as long as it has a film-forming property alone, and any of a thermoplastic resin or a thermosetting resin can be used. These can also be used in combination.
  • the film-forming resin component is not particularly limited.
  • (meth) acrylic resin refers to a polymer of (meth) acrylic acid and its derivatives, or a co-polymerization of (meth) acrylic acid and its derivatives and other monomers. Means coalescence.
  • the expression “(meth) acrylic acid” or the like means “acrylic acid or methacrylic acid” or the like.
  • the (meth) acrylic resin is not particularly limited, and examples thereof include polyacrylic acid such as polyacrylic acid, polymethacrylic acid, polymethyl acrylate, polyethyl acrylate, polybutyl acrylate, and polyacrylic acid-2-ethylhexyl.
  • polymethacrylate such as polymethyl methacrylate, polyethyl methacrylate, polybutyl methacrylate, polyacrylonitrile, polymethacrylonitrile, polyacrylamide, butyl acrylate-ethyl acrylate-acrylonitrile copolymer, acrylonitrile- Butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, acrylonitrile-styrene copolymer, methyl methacrylate-styrene copolymer, methacryl Methyl-acrylonitrile copolymer, methyl methacrylate- ⁇ -methylstyrene copolymer, butyl acrylate-ethyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate-methacrylic acid copolymer, butyl acrylate-ethy
  • butyl acrylate-ethyl acrylate-acrylonitrile copolymer and ethyl acrylate-acrylonitrile-N, N-dimethylacrylamide copolymer are preferable.
  • the skeleton of the phenoxy resin is not particularly limited, and examples thereof include bisphenol A type, bisphenol F type, biphenol type, and biphenyl type. Further, the phenoxy resin preferably has a low water absorption, preferably 2% or less, more preferably 1% or less. Further, the epoxy equivalent of the phenoxy resin is not particularly limited, but it is preferable because the epoxy equivalent is large so that it does not function as a thermosetting resin component and does not become a harmful effect in controlling the curability of the adhesive film. The epoxy equivalent is preferably 3000 g / eq or more, and more preferably 5000 g / eq or more.
  • the polyimide resin is not particularly limited as long as it has an imide bond in the repeating unit.
  • the diamine is not particularly limited, and examples thereof include aromatics such as 3,3′-dimethyl-4,4′-diaminodiphenyl, 4,6-dimethyl-m-phenylenediamine, and 2,5-dimethyl-p-phenylenediamine.
  • siloxane diamines such as 1,3-bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane, and one or a combination of two or more of these may be used. it can.
  • acid dianhydrides examples include 3,3 ′, 4,4′-biphenyltetracarboxylic acid, pyromellitic dianhydride, 4,4′-oxydiphthalic dianhydride, and the like. Of these, one or two or more can be used in combination.
  • the polyimide resin may be either soluble or insoluble in the solvent, but it is easy to varnish when mixed with other components (curable resin component), and is a solvent because it is easy to handle. Soluble ones are preferred.
  • a siloxane-modified polyimide resin is preferably used because it can be dissolved in various organic solvents.
  • the weight average molecular weight of the film-forming resin is not particularly limited, but is preferably about 8,000 to 1,000,000, more preferably about 8,500 to 950,000, and 9,000 to More preferably, it is about 900,000.
  • the weight average molecular weight of the film-forming resin is within the above range, the film-forming property can be improved, and the fluidity of the adhesive film before curing can be suppressed.
  • the weight average molecular weight of film-forming resin can be measured by GPC (gel permeation chromatography), for example.
  • a film-forming resin component a commercial product of this can be used, and further, a plasticizer, a stabilizer, an inorganic filler, an antistatic agent, a low stress agent, as long as the effects of the present invention are not impaired. What mix
  • the blending amount of the film-forming resin component described above can be appropriately set according to the form of the curable resin composition to be used.
  • the blending amount of the film-forming resin component is preferably 0.1% by weight or more, more preferably 3% by weight or more, and more preferably 5% by weight or more in the resin composition. Further preferred. Further, it is preferably 50% by weight or less, more preferably 35% by weight or less, and further preferably 20% by weight or less.
  • the blending amount of the film-forming resin component is within the above range, the fluidity of the resin composition before melting can be suppressed, and the adhesive film can be easily handled.
  • the resin composition further contains a compound having a flux function in addition to the curable resin component.
  • a compound having a flux function has an action of removing a metal oxide film formed on the surface of a terminal or the like. Therefore, if such a compound is contained in the resin composition, an oxide film is formed on the surface of the low melting point metal on the surface of the terminal or the like, as will be described in detail in the method of manufacturing a semiconductor device described later. Even if it is done, the oxide film can be reliably removed by the action of this compound.
  • the wettability of the low melting point metal composition is improved, so that the first terminal and the second terminal are improved.
  • the first terminal and the second terminal can be reliably electrically connected by being spread over a wide range and being joined in a wide range.
  • the reliability at the joint is improved, and sufficient results can be obtained even in a temperature cycle test or the like, and the yield in manufacturing the semiconductor device can be improved.
  • the compound which has a phenolic hydroxyl group and / or a carboxyl group is used preferably.
  • Examples of the compound having a phenolic hydroxyl group include phenol, o-cresol, 2,6-xylenol, p-cresol, m-cresol, o-ethylphenol, 2,4-xylenol, 2,5-xylenol, m- Ethylphenol, 2,3-xylenol, mesitol, 3,5-xylenol, p-tert-butylphenol, catechol, p-tert-amylphenol, resorcinol, p-octylphenol, p-phenylphenol, bisphenol F, bisphenol A, biphenol Monomers containing phenolic hydroxyl groups such as diallyl bisphenol F, diallyl bisphenol A, trisphenol, tetrakisphenol, phenol novolac resins, o-cresol novolac resins, bisphenols Lumpur F novolak resins, resins containing phenolic manufactured hydroxyl group, such as
  • examples of the compound having a carboxyl group include aliphatic acid anhydrides, alicyclic acid anhydrides, aromatic acid anhydrides, aliphatic carboxylic acids, aromatic carboxylic acids, and the like.
  • examples of the aliphatic acid anhydride include succinic anhydride, polyadipic acid anhydride, polyazeline acid anhydride, polysebacic acid anhydride, and the like.
  • Examples of the alicyclic acid anhydride include methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylhymic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, methylcyclohexene dicarboxylic acid.
  • An anhydride etc. are mentioned.
  • the aromatic acid anhydride include phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic acid anhydride, ethylene glycol bistrimellitate, glycerol trislimitate, etc. Species or a combination of two or more can be used.
  • the aliphatic carboxylic acid is not particularly limited, for example, formic acid, acetic acid, propionic acid, butyric acid, valeric acid, pivalic acid, caproic acid, caprylic acid, lauric acid, myristic acid, palmitic acid, stearic acid, acrylic acid, Methacrylic acid, crotonic acid, oleic acid, fumaric acid, maleic acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, sebacic acid, dodecanedioic acid, pimelic acid, etc. Two or more kinds can be used in combination.
  • n is an integer of 1 to 20
  • adipic acid, sebacic acid, and dodecanedioic acid are more preferably used.
  • the structure of the aromatic carboxylic acid is not particularly limited, but a compound represented by the following formula (2) or the following formula (3) is preferable.
  • R 1 to R 5 are each independently a monovalent organic group, and at least one of R 1 to R 5 is a hydroxyl group.
  • R 6 to R 20 are each independently a monovalent organic group, and at least one of R 6 to R 20 is a hydroxyl group or a carboxyl group. ]
  • aromatic carboxylic acids examples include benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, hemimellitic acid, trimellitic acid, trimesic acid, merophanic acid, planitic acid, pyromellitic acid, meritic acid, xylic acid , Hemelic acid, mesitylene acid, prenylic acid, toluic acid, cinnamic acid, 2-hydroxybenzoic acid, 3-hydroxybenzoic acid, 4-hydroxybenzoic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid Benzoic acid derivatives such as gentisic acid (2,5-dihydroxybenzoic acid), 2,6-dihydroxybenzoic acid, 3,5-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 1 , 4-Dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, 3,5-dihydride Na
  • a compound having a phenolic hydroxyl group and / or a carboxyl group and further containing a phenyl ether group is more preferably used.
  • the compound containing a phenolic hydroxyl group and / or carboxyl group and a phenyl ether group include 2-phenoxyphenol, 3-phenoxyphenol, 4-phenoxyphenol, 2- (4-hydroxyphenoxy) phenol, 3- (4 -Hydroxyphenoxy) phenol, 4- (4-hydroxyphenoxy) phenol, 3-hydroxyxanthen-9-one, 5-nitrofluorescein, 6-nitrofluorescein, 9-phenylxanthen-9-ol, 2,6,7- Trihydroxy-9-phenyl-3-isoxanthone, 1,3-bis (4-hydroxyphenoxy) benzene, 1,4-bis (3-hydroxyphenoxy) benzene, 4,4′-dihydroxydiphenyl ether, 2,2 ′ -Dihydroxydiphenyl Compounds containing 2-phenoxyphenol, 3-phenoxyphenol,
  • the compound having such a flux function preferably exhibits a flux action and has a function as a curing agent for curing the curable resin component, that is, a functional group capable of reacting with the curable resin component.
  • a functional group is appropriately selected according to the type of the curable resin component.
  • the curable resin component is an epoxy resin
  • a functional group capable of reacting with an epoxy group such as a carboxyl group, a hydroxyl group, and an amino group.
  • the compound having such a flux function removes an oxide film formed on the surface of the metal composition having a low melting point when the curable resin composition is melted to improve the wettability of these surfaces, thereby facilitating the connection portion 81.
  • this compound acts as a curing agent and exerts a function of adding to the curable resin component to increase the elastic modulus or Tg of the resin. Therefore, when a compound having such a flux function is used as the flux, flux cleaning is unnecessary, and the occurrence of ion migration due to the remaining flux can be suppressed or prevented accurately.
  • Examples of the compound having such a function and having a flux function include compounds having at least one carboxyl group.
  • the curable resin component is an epoxy resin
  • examples thereof include aliphatic dicarboxylic acids and compounds having a carboxyl group and a phenolic hydroxyl group.
  • aliphatic dicarboxylic acid The compound which two carboxyl groups couple
  • the aliphatic hydrocarbon group may be saturated or unsaturated acyclic, or may be saturated or unsaturated cyclic. Further, when the aliphatic hydrocarbon group is acyclic, it may be linear or branched.
  • aliphatic dicarboxylic acids examples include compounds in which n is an integer of 1 to 20 in the formula (1).
  • n in the formula (1) is within the above range, the balance between the flux activity, the outgas at the time of adhesion, the elastic modulus after curing of the curable resin composition, and the glass transition temperature becomes good.
  • n is preferably 3 or more from the viewpoint that the increase in the elastic modulus after curing of the curable resin composition can be suppressed and the adhesion with an adherend such as the interposer 30 can be improved. From the viewpoint of suppressing the decrease in elastic modulus and further improving the connection reliability, n is preferably 10 or less.
  • Examples of the aliphatic dicarboxylic acid represented by the formula (1) include glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid, dodecanedioic acid, tridecanedioic acid, and tetradecanedioic acid. Pentadecanedioic acid, octadecanedioic acid, nonadecanedioic acid, eicosanedioic acid and the like. Among these, adipic acid, suberic acid, sebacic acid and dodencandioic acid are preferable, and sebacic acid is more preferable.
  • compounds having a carboxyl group and a phenolic hydroxyl group include 2-hydroxybenzoic acid, 3-hydroxybenzoic acid, 4-hydroxybenzoic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentidine.
  • Benzoic acid derivatives such as acid (2,5-dihydroxybenzoic acid), 2,6-dihydroxybenzoic acid, 3,4-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 1,4 Examples thereof include naphthoic acid derivatives such as -dihydroxy-2-naphthoic acid and 3,5-dihydroxy-2-naphthoic acid, phenolphthaline, and diphenolic acid.
  • phenolphthaline, gentisic acid, 2,4-dihydroxybenzoic acid, and 2,6-dihydroxybenzoic acid are preferable, and phenolphthalin and gentisic acid are more preferable.
  • the compounds having a flux function as described above may be used alone or in combination of two or more.
  • any compound since any compound easily absorbs moisture and causes voids, in the present invention, it is preferably dried in advance before use.
  • Content of the compound which has a flux function can be suitably set according to the form of the resin composition to be used.
  • the content of the compound having such a flux function is preferably 1% by weight or more, more preferably 3% by weight or more, and particularly preferably 5% by weight or more with respect to the total weight of the resin composition. Moreover, 50 weight% or less is preferable, 40 weight% or less is more preferable, 30 weight% or less is further more preferable, and 25 weight% or less is especially preferable.
  • the content of the compound having the flux function is within the above range, the oxide film formed on the surface of the low melting point metal composition or the like can be surely removed, whereby the electronic component and the circuit component can be removed. Can be reliably electrically joined.
  • the compound having a flux function when the compound having a flux function is a compound capable of reacting with the curable resin component, it can be efficiently added to the curable resin component at the time of curing to increase the elastic modulus or Tg of the curable resin composition. Moreover, generation
  • the curing agent is not particularly limited, and examples thereof include phenols, amines, and thiols.
  • curing agent can be suitably selected according to the kind etc. of curable resin component.
  • an epoxy resin is used as the curable resin component, good reactivity with the epoxy resin, low dimensional change during curing, and appropriate physical properties after curing (eg heat resistance, moisture resistance, etc.) are obtained.
  • it is preferable to use a phenol as a curing agent and a bifunctional or higher functional phenol is more preferably used in terms of excellent physical properties after curing of the curable resin component.
  • curing agent may be used individually by 1 type, and may be used in combination of 2 or more type.
  • phenols examples include bisphenol A, tetramethylbisphenol A, diallyl bisphenol A, biphenol, bisphenol F, diallyl bisphenol F, trisphenol, tetrakisphenol, phenol novolac resin, cresol novolac resin, etc. Species or a combination of two or more can be used. Among these, a phenol novolac resin and a cresol novolac resin are preferable from the viewpoints of good melt viscosity, reactivity with an epoxy resin, and excellent physical properties after curing.
  • the amount of the curing agent described above is determined in accordance with the type of the curable resin component and the curing agent to be used, and when the compound having a flux function has a functional group that functions as a curing agent. It is set as appropriate depending on the type of group and the amount used.
  • the content of the curing agent is preferably about 0.1 to 50% by weight with respect to the total weight of the resin composition, and about 2 to 40% by weight. More preferably, the amount is about 4 to 40% by weight, more preferably 8 to 30% by weight.
  • the content of the curing agent is within the above range, the electrical connection strength and mechanical adhesive strength of the connection portion formed between the terminals can be sufficiently ensured.
  • (V) Curing accelerator As described above, a curing accelerator can be further added to the resin composition. Thereby, the said resin composition can be hardened reliably and easily.
  • the curing accelerator is not particularly limited, and examples thereof include imidazole, 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2- Phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-ethyl-4-methyl Imidazo such as imidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 2-phenyl-4,5-dihydroxydimethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-
  • the blending amount of the curing accelerator described above can be appropriately set according to the type of the curing accelerator to be used.
  • the amount of the imidazole compound is preferably 0.001% by weight or more, more preferably 0.003% by weight or more in the resin composition. More preferably, it is 0.005% by weight or more. Further, it is preferably 1.0% by weight or less, more preferably 0.7% by weight or less, and further preferably 0.5% by weight or less.
  • the blending amount of the imidazole compound is less than the lower limit, depending on the type of the curing accelerator to be used, the effect as the curing accelerator may not be sufficiently exhibited, and the curable resin composition may not be sufficiently cured. . Also, if the amount of the imidazole compound exceeds the upper limit, the low melting point metal composition in the molten state cannot exhibit sufficient wettability before the curing of the curable resin composition is completed, and electrical connection is not achieved. May be insufficient.
  • a silane coupling agent can be further added to the resin composition.
  • a silane coupling agent for example, an epoxy silane coupling agent, an aromatic containing aminosilane coupling agent, etc. are mentioned.
  • an epoxy silane coupling agent for example, an epoxy silane coupling agent, an aromatic containing aminosilane coupling agent, etc. are mentioned.
  • silane coupling agent By adding such a silane coupling agent, it is possible to improve the adhesion between the adhesive film and the adherend, particularly the adhesion between the interposer and the like.
  • such a silane coupling agent may be used individually by 1 type, and can also be used in combination of 2 or more type.
  • the amount of the silane coupling agent described above is appropriately set according to the type of the adherend and the curable resin component.
  • the resin composition it is preferably 0.01% by weight or more, more preferably 0.05% by weight or more, and further preferably 0.1% by weight or more. Further, it is preferably 2% by weight or less, more preferably 1.5% by weight or less, and further preferably 1% by weight or less.
  • the resin composition includes a filler.
  • a filler thereby, various physical properties can be added to the adhesive film, and reliability can be improved.
  • the filler include a filler made of an organic material such as rubber particles, and an inorganic filler such as silica. From the viewpoint of improving reliability, an inorganic filler is preferable. By including the inorganic filler, the linear expansion coefficient of the sealing layer can be lowered, thereby improving the reliability.
  • an inorganic filler is not specifically limited, For example, silver, titanium oxide, a silica, mica, an alumina etc. can be mentioned, These can also include multiple types.
  • the inorganic filler can be selected from a plurality of types
  • silica can be preferably used from the viewpoint of cost and the like.
  • aluminum oxide, aluminum nitride, titanium oxide, silicon nitride, boron nitride, or the like can also be used.
  • shape of the silica there are crushed silica and spherical silica, and spherical silica is preferable.
  • the average particle size of the inorganic filler is not particularly limited, but is preferably 0.01 ⁇ m or more and 0.5 ⁇ m or less, and more preferably 0.05 ⁇ m or more and 0.3 ⁇ m or less.
  • the content of the filler is 10% by weight or more and 70% by weight or less, preferably 20% by weight or more and 65% by weight or less, more preferably 30% by weight or more and 60% by weight or less, based on the resin composition. More preferably, it is 30 to 50 weight%.
  • the adhesive film can be further adjusted by adjusting the type of filler, the average particle diameter of the filler, the conditions for adjusting the resin varnish, the resin composition of the film, the film forming conditions, the film thickness, etc. It becomes possible to make the surface roughness of a preferable range, and the transparency of an adhesive film can be improved more. Moreover, aggregation in an adhesive film can be suppressed and an external appearance can be improved.
  • the difference in linear expansion coefficient between the cured sealing layer and the contacted body is reduced, and the stress generated during thermal shock can be reduced. Can be further improved. Furthermore, since the elasticity modulus of the sealing layer after curing can be suppressed from being excessively increased and the filler is prevented from being caught in the joint portion, the reliability of the semiconductor device is further improved.
  • the resin composition further includes a plasticizer, a stabilizer, a tackifier, a lubricant, an antioxidant, an antistatic agent, a low stress agent, a leveling agent, a pigment, and the like. May be.
  • a latent curing agent may be blended together with the thermosetting component.
  • latent curing agents dicyandiamide type latent curing agent, amine adduct type latent curing agent, organic acid hydrazide type latent curing agent, aromatic sulfonium salt type latent curing agent, microcapsule type latent curing agent, light
  • a curable latent curing agent can be used, and among them, by including an amine adduct type latent curing agent and the like, it is possible to balance the storage stability of the adhesive film and the rapid curing property.
  • the said adhesive film can be manufactured with the following manufacturing methods, for example. After applying the varnish obtained by dissolving the resin composition constituting the adhesive film in an organic solvent to a base material or the like, the laminate of the base material layer and the adhesive film is dried at a predetermined temperature. Obtainable.
  • the substrate is not particularly limited as long as it can support an adhesive film and can be peeled off when the adhesive film is used.
  • a polyester sheet, a polyethylene sheet, a polypropylene sheet, a polyimide sheet, a polystyrene sheet, a polycarbonate A sheet or the like can be used.
  • the release treatment include, but are not limited to, a method of forming a silicon release agent on the surface and a method of forming an alkyd resin release agent.
  • the breaking strength of the substrate is not particularly limited, but is preferably 160 MPa or more and 300 MPa or less, and more preferably 180 MPa or more and 280 MPa or less.
  • the adhesive film has a surface roughness Ra of 0.03 ⁇ m to 1.0 ⁇ m, more preferably 0.05 ⁇ m to 0.8 ⁇ m, and still more preferably 0.1 ⁇ m to 0.5 ⁇ m.
  • the adhesive has sufficient transparency, and by being above the lower limit value, when recognizing the surface of the electronic component, by preventing irregular reflection, The visibility of the shape and arrangement of one terminal is improved. Moreover, slipperiness improves and the workability
  • a surface roughness meter SURFCOM 1400D manufactured by Tokyo Seimitsu may be used as a commercially available surface roughness meter.
  • the adhesive film has a light transmittance at 700 nm of preferably 15% or more and 100% or less, more preferably 20% or more and 100% or less, and further preferably 25% or more and 100% or less.
  • the adhesive has sufficient transparency, and by being below the upper limit value, when recognizing the surface of the electronic component, by preventing irregular reflection, The visibility of the shape and arrangement of one terminal is improved.
  • the light transmittance of such an adhesive film is not particularly limited, it can be measured using a commercially available spectral transmittance measuring machine, for example, according to the transmittance measurement described in JISK7375.
  • a commercially available spectral transmittance measuring machine for example, a spectrophotometer UV-160 manufactured by Shimadzu Corporation can be used.
  • incident light was incident on the adhesive film measured at a wavelength of 400 nm to 900 nm, the transmittance was measured from the ratio of the transmitted parallel rays, and the measured value at 700 nm was taken as the light transmittance.
  • the ratio [C / D] of the surface roughness Ra to the light transmittance is 1.8.
  • ⁇ 10 ⁇ 2 ⁇ m /% or less is preferable, 1.1 ⁇ 10 ⁇ 2 ⁇ m /% or less is more preferable, and 5.0 ⁇ 10 ⁇ 4 ⁇ m /% or more and 1.0 ⁇ 10 ⁇ 2 or less. More preferably, it is not more than ⁇ m /%.
  • the surface of the electronic component is recognized by being not more than the upper limit value or not less than the lower limit value, by preventing irregular reflection on the film surface and scattering in the film, the shape and arrangement of the first terminals of the electronic component Etc. The visibility of these etc. improves. Moreover, slipperiness improves and the workability
  • the adhesive film preferably has a minimum melt viscosity of 50,000 Pa ⁇ s or less, more preferably 20,000 Pa ⁇ s or less, and even more preferably 10,000 Pa ⁇ s or less. Further, it is preferably 0.01 Pa ⁇ s or more, more preferably 0.05 Pa ⁇ s or more, and further preferably 0.1 Pa ⁇ s or more.
  • the wettability of the adhesive film is improved, and voids can be prevented from remaining inside the sealing material.
  • problems such as a tool becoming dirty, can be prevented because an adhesive film protrudes from an electronic component.
  • Such minimum melt viscosity is not particularly limited, but can be measured using a commercially available viscoelasticity measuring device, rheometer, or the like. Among them, it is preferable to measure using a rotary rheometer that measures by sandwiching an adhesive film between circular plates installed in parallel and applying torque under a certain condition. By using such a measuring method, it is possible to measure the melt viscosity under conditions according to the process of actually bonding the electronic component and the circuit component.
  • a viscoelasticity measuring device (“MARS" manufactured by Thermo Fisher Scientific Co., Ltd.
  • a parallel plate 20 mm ⁇ , a gap 0.05 mm, a frequency 0.1 Hz, and a heating rate are 10 ° C / min. The value at which the measured melt viscosity was minimized was taken as the measured value.
  • Tg of the resin composition is preferably 80 ° C. or higher, and more preferably 100 ° C. or higher. By being within the preferable range, the reliability of the semiconductor device of the present invention is further improved. Moreover, as an average linear expansion coefficient of the said adhesive film, (alpha) 1 is preferable 100 ppm or less, 75 ppm or less is more preferable, It is further more preferable if it is 50 ppm or less. By being within the preferable range, the reliability of the semiconductor device of the present invention is further improved.
  • Tg and ⁇ 1 can be measured by TMA or the like generally used by treating the adhesive film under assumed curing conditions such as 180 ° C. for 2 hours.
  • the thickness of the adhesive film can be appropriately set depending on the type of electronic component used and the type of circuit component. In particular, it is preferable to set appropriately according to the design of the first terminal and the connection portion of the electronic component.
  • the thickness of the adhesive film is preferably 100 ⁇ m or less, and more preferably 80 ⁇ m or less. Moreover, 3 micrometers or more are preferable and 5 micrometers or more are more preferable.
  • Examples of the method of attaching the adhesive film 10 to the semiconductor wafer 40 include a method of laminating the adhesive film 10 to the semiconductor wafer 40 by a roll laminator, a flat plate press, a wafer laminator, an elastic body press, or the like. Among these, a method of laminating under vacuum (vacuum laminator) is preferable in order to prevent air from being involved during lamination.
  • the conditions for laminating are not particularly limited as long as they can be laminated without voids. Specifically, the conditions of heating at 50 to 150 ° C. for 1 second to 120 seconds are preferable, and particularly at 60 to 120 ° C. for 5 to 60 seconds. Heating conditions are preferred. When the laminating conditions are within the above range, the balance between the sticking property, the effect of suppressing the protrusion of the resin, and the degree of curing of the resin is excellent.
  • the pressurizing condition is not particularly limited, but is preferably 0.2 to 2.0 MPa, particularly preferably 0.5 to 1.5 MPa. As a result of the above lamination, as shown in FIG. 3B, a laminate 37 in which the adhesive film 10 and the semiconductor wafer 40 are laminated is obtained. Next, as shown in FIG.
  • a dicing sheet 50 is attached to the surface of the semiconductor wafer 40 opposite to the surface to which the adhesive film is bonded.
  • the dicing sheet 50 is not particularly limited, and a generally used sheet including a support film and an adhesive layer can be used.
  • the pressure-sensitive adhesive layer those composed of a resin composition such as an acrylic pressure-sensitive adhesive and a rubber-based pressure-sensitive adhesive can be used, and among these, an acrylic pressure-sensitive adhesive is preferable.
  • photoreactive monomers and oligomers such as urethane acrylate and an acrylate monomer, and a photoinitiator.
  • the said support film is although it does not specifically limit, When a photoreactive monomer etc.
  • an adhesive layer it is preferable to have a radiation transmittance.
  • the support film for example, polyethylene, polypropylene, ethylene / propylene copolymer and the like can be used.
  • a wafer laminator or the like can be used for attaching the dicing sheet 50. At this time, it is preferable to attach the wafer ring 51 at the same time and fix the semiconductor wafer. Since the wafer ring 51 is generally made of various metal materials such as stainless steel and aluminum, the wafer ring 51 has high rigidity and can reliably prevent deformation of the laminate.
  • a dicer table (not shown) is prepared, and the laminate is placed on the dicer table so that the dicer table and the dicing sheet 50 are in contact with each other.
  • a plurality of cuts 53 are formed in the laminate using a dicing blade 52 (dicing).
  • the dicing blade 52 is composed of a disk-shaped diamond blade or the like, and a cut 53 is formed by pressing the dicing blade 52 against the surface of the laminated body on the semiconductor wafer 40 side while rotating. Then, by relatively moving the dicing blade 52 along the gap between the circuit patterns formed on the semiconductor wafer 40, the semiconductor wafer 40 is divided into a plurality of individual semiconductor chips 20. .
  • each of the separated semiconductor chips 20 has a terminal 21 for electrical connection to the outside.
  • the adhesive film 10 is divided into a plurality of adhesive layers. During such dicing, vibration and impact are applied to the semiconductor wafer 40, but the lower surface of the semiconductor wafer 40 is supported by the dicing tape 50, so that the vibration and impact are alleviated. As a result, it is possible to reliably prevent the occurrence of defects such as cracks and chips in the semiconductor wafer 40 and the semiconductor chip 20.
  • a semiconductor chip with an adhesive film 10 is adsorbed by a collet (chip adsorbing portion) and picked up one of the semiconductor chips 20 by a die bonder or die sorter (not shown). 20 can be obtained (pickup).
  • a needle-like body (needle) or the like that pushes up the dicing tape 50 from below can be used (not shown).
  • the dicing tape 50 is to improve the pick-up property by reducing its adhesiveness by irradiation with ultraviolet rays or heating, irradiation with ultraviolet rays or heat treatment can be performed before pick-up.
  • an interposer (circuit component) 30 for mounting (mounting) the separated semiconductor chip (electronic component) 20 is prepared.
  • the interposer 30 has a terminal (not shown) on the surface to be bonded to the adhesive film.
  • the picked-up semiconductor chip 20 is placed on the interposer 30 via an adhesive film.
  • the first terminal 21 of the separated semiconductor chip (electronic component) 20 and the second terminal 31 of the interposer (circuit component) 30 are aligned with each other through the adhesive film 10.
  • Crimp. As shown in FIG. 5A, the interposer 30 is provided with a wiring circuit 33 on a base material 32 and has an electrode pad 34 as a terminal.
  • the wiring circuit 52 is provided with an insulating portion 35 except for the electrode pads 34.
  • the insulating portion 35 is provided with a plurality of alignment marks 36 as patterns used for alignment.
  • a predetermined part of the interposer 30 such as the electrode pad 34 (concave portion) shown in FIG. 5A can be used as the alignment mark.
  • FIG. 5B illustrates details of the stacked body 37 in which the semiconductor chip (electronic component) 20 and the adhesive film 10 which are separated into pieces are stacked.
  • the first terminals 21 of the separated semiconductor chip 20 are metal bumps having a low melting point conductive metal on the surface.
  • the separated semiconductor chip 20 is provided with a plurality of alignment marks 22 as patterns used for alignment.
  • predetermined portions of the separated semiconductor chip 20 such as the first terminals 21 (protrusions) shown in FIG. It can be used as an alignment mark. That is, the pattern used for alignment between the interposer (circuit component) 30 and the separated semiconductor chip (electronic component) 20 is not limited to the alignment marks 36 and 22 dedicated to the alignment.
  • a terminal, an electrode, a bump, a wiring pattern (wiring), a pad portion (for example, a bonding pad, an electrode pad), a dicing line, and the like can be given.
  • the interposer 30 is aligned. Alignment of the separated semiconductor chip 20 with respect to 30 is performed. Then, the semiconductor chip 20 is temporarily pressure-bonded via the interposer 30 and the separated semiconductor chip 20 and the adhesive film 10, and the separated semiconductor chip 20 is fixed on the interposer 30 (FIG. 5C).
  • the method for temporary pressure bonding is not particularly limited, but can be performed using a pressure bonding machine, a flip chip bonder, or the like.
  • the conditions for pre-bonding are not particularly limited, but the temperature is preferably 40 ° C. to 200 ° C., particularly preferably 60 ° C.
  • the time is preferably from 0.1 second to 60 seconds, particularly preferably from 1 to 60 seconds.
  • the pressure is preferably 0.1 MPa to 2.0 MPa, particularly preferably 0.3 MPa to 1.5 MPa. If the pre-bonding condition is within the above range, the separated semiconductor chip 20 can be securely pre-bonded onto the interposer 30.
  • the electrical connection between the interposer 30 and the semiconductor chip 20 is accomplished by melting the low melting point metal composition on the surface of the first terminal 21 and soldering the electrode pad 34 to form an electrical connection 81. (FIG. 5D).
  • the soldering conditions depend on the type of the low melting point metal composition used. For example, in the case of Sn—Ag, it is preferable to solder at 220 to 260 ° C. for 5 to 500 seconds, particularly 230 to Heating at 240 ° C. for 10 to 100 seconds is preferred. This solder bonding is preferably performed under conditions such that the adhesive film 10 is cured after the low melting point metal composition is melted.
  • solder bonding be performed under the condition that the metal composition having a low melting point is melted but the curing reaction of the adhesive film 10 does not proceed so much. Thereby, the shape of the connection part 81 at the time of connecting can be made into the stable shape which is excellent in connection reliability.
  • the adhesive film 10 is heated and cured to form the sealing layer 80.
  • the conditions for curing are not particularly limited, but the temperature is preferably from 130 to 220 ° C, particularly preferably from 150 to 200 ° C.
  • the time is preferably from 30 to 500 minutes, particularly preferably from 60 to 180 minutes.
  • the adhesive film 10 may be cured in a pressurized atmosphere. Although it does not specifically limit as a pressurization method, It can carry out by introduce
  • the pressure is preferably from 0.1 MPa to 10 MPa, particularly preferably from 0.5 MPa to 5 MPa.
  • the curing condition is within the above range, voids in the adhesive film 10 can be reduced. In this manner, a cured product 38 of a laminate in which the interposer 30 and the separated semiconductor chip 20 are bonded with the sealing layer 80 made of a cured product of the adhesive film can be obtained.
  • bumps 70 for mounting the semiconductor device 100 on the motherboard are formed (FIG. 5E).
  • the bump 70 is not particularly limited as long as it is a metal material having conductivity, but solder having excellent conductivity and stress relaxation properties is preferable.
  • the method for forming the bumps 70 is not particularly limited, but can be formed by connecting solder balls using flux. In this way, in this embodiment, as shown in FIG. 5E, the interposer 30 and the separated semiconductor chip 20 are bonded by the sealing layer 80 made of the cured adhesive film.
  • the semiconductor device 100 including the cured body 38 and the bumps 70 can be obtained. According to the above method, it is not necessary to separately prepare an underfill, a fluxing agent, or the like, and the manufacturing efficiency of the semiconductor device 100 in which the semiconductor chip 20 and the interposer 30 are electrically connected can be further increased.
  • the adhesive film 10 is attached to the semiconductor wafer 40 and the dicing sheet 50 is attached in this order.
  • an integrated adhesive film in which the adhesive film 10 is laminated on a process sheet used in a semiconductor manufacturing process such as a back grind tape or a back grind tape / dicing tape used in a silicon wafer back grind process. It may be used.
  • the adhesive film 10 was affixed on the semiconductor wafer 40, it is not restricted to such a manufacturing method, The adhesive film 10 is separated into pieces, it affixes on the semiconductor chip previously separated, A manufacturing method in which the surface of the adhesive film 10 opposite to the surface on which the semiconductor chip is attached is temporarily pressure-bonded to the interposer 30 and then electrically connected thereto can be used. In the present embodiment, the separated semiconductor chip 20 is bonded to the interposer 30.
  • the present invention is not limited to such a manufacturing method, and a plurality of separated semiconductor chips are attached to another semiconductor wafer.
  • Bonding is performed to produce a laminate having a plurality of semiconductor chips and a plurality of adhesive films on the semiconductor wafer, and the semiconductor wafer is diced into individual pieces, and the separated laminate is further interposer, etc. It is also possible to use a manufacturing method in which a semiconductor device is manufactured by connecting to a semiconductor device.
  • the dicing tape-integrated adhesive film of the present invention includes the adhesive film of the present invention and a dicing tape.
  • FIG. 6 shows an embodiment of the dicing tape-integrated adhesive film of the present invention.
  • the dicing tape-integrated adhesive film 210 has a structure in which an adhesive film 211 is formed on a dicing tape 213.
  • the dicing tape 213 is composed of two layers, a base layer 213a of the dicing tape and an adhesive layer 213b of the dicing tape, and the adhesive layer 213b of the dicing tape and the adhesive film 211 are in contact with each other. Are stacked.
  • the form of the dicing tape-integrated adhesive film of the present invention is not limited to that shown in FIG. 6.
  • the dicing tape has an intervening layer between the adhesive layer 213 b of the dicing tape and the adhesive film 211.
  • the adhesive layer of the dicing tape is preferably higher in adhesiveness than the intervening layer.
  • the adhesive force of the adhesion layer of the dicing tape with respect to an intervening layer and a base material layer becomes larger than the adhesive force of the intervening layer with respect to the adhesive film 211. Therefore, in an electronic component manufacturing process, for example, in an electronic component manufacturing process such as a semiconductor chip pickup process, peeling is caused at a desired interface (that is, an interface between an intervening layer and an adhesive film) that should cause peeling. Can do.
  • the dicing tape used for the dicing tape-integrated adhesive film of the present invention can be any dicing tape that is generally used.
  • the constituent material of the base material layer 213a of the dicing tape is not particularly limited.
  • polyethylene, polypropylene, polybutene, polybutadiene, polymethylpentene, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate, polybutylene terephthalate, polyurethane examples include ethylene vinyl acetate copolymer, ionomer, ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylic acid ester copolymer, polystyrene, vinyl polyisoprene, polycarbonate, polyolefin, etc.
  • One kind or a mixture of two or more kinds can be used.
  • the average thickness of the base layer 213a of the dicing tape is not particularly limited, but is preferably 5 ⁇ m to 200 ⁇ m, and more preferably about 30 ⁇ m to 150 ⁇ m.
  • the base material layer has an appropriate rigidity, the adhesive film is surely supported, the handling of the dicing tape integrated adhesive film is facilitated, and the dicing tape integrated adhesive film is appropriately controlled. By curving, the adhesiveness between the adhesive film and the contacted body having the electrode can be enhanced.
  • Common molding methods such as a calendar method and an extrusion molding method, can be used.
  • a functional group that reacts with the material constituting the adhesive layer 213b such as a hydroxyl group or an amino group, is exposed on the surface of the base material layer 213a.
  • the surface of the base material layer 213a is preferably surface-treated with a corona treatment or an anchor coat.
  • the constituent material of the adhesive layer 213b of the dicing tape is not particularly limited, but for example, a material composed of a resin composition containing an acrylic adhesive, a rubber adhesive, or the like can be used.
  • the acrylic pressure-sensitive adhesive include resins composed of (meth) acrylic acid and esters thereof, (meth) acrylic acid and esters thereof, and unsaturated monomers copolymerizable therewith (for example, vinyl acetate, Copolymers with styrene, acrylonitrile, etc.) are used. Two or more kinds of these copolymers may be mixed.
  • the copolymer with 1 or more types chosen from is preferable. Thereby, it becomes easy to control the adhesiveness and adhesiveness with a partner (for example, the above-described intervening layer, base material layer, etc.) to which the adhesive layer of the dicing tape adheres.
  • the average thickness of the adhesive layer 213b of the dicing tape is not particularly limited, but is preferably about 1 ⁇ m to 100 ⁇ m, more preferably about 3 ⁇ m to 20 ⁇ m.
  • the average thickness of the pressure-sensitive adhesive layer 213b of the dicing tape is within the above range, the shape following property of the pressure-sensitive adhesive layer 213b of the dicing tape is ensured, and the adhesiveness of the adhesive film such as a semiconductor wafer to the contacted object can be further increased. it can.
  • the said dicing tape can manufacture by apply
  • the adhesive layer 213b may be separately manufactured by coating the adhesive layer 213b on the base material for the adhesive layer 213b and then transferring the adhesive layer 213b on the base material layer 213a of the dicing tape.
  • the intervening layer may be further coated on the adhesive layer 213b, or the intervening layer is separately produced by laminating a material coated on the intervening layer base material.
  • the dicing tape-integrated adhesive film of the present invention includes, for example, a base material layer 213a, an adhesive layer 213b, and a dicing tape having an intervening layer, and the adhesive film of the present invention. It can also be obtained by laminating in contact.
  • the back grind tape-integrated adhesive film of the present invention comprises the above-mentioned adhesive film of the present invention and a background tape.
  • the said back grind tape is not specifically limited, What has the adhesive layer formed in the single side
  • PET polyethylene terephthalate
  • PE polyethylene
  • PP polypropylene
  • EVA ethylene-vinyl acetate copolymer
  • the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer is not particularly limited, but is preferably composed of a pressure-sensitive adhesive containing a polymerizable oligomer and having a pressure-sensitive adhesive force lowered by polymerization crosslinking.
  • a pressure-sensitive adhesive for example, an acrylic acid alkyl ester-based and / or methacrylic acid alkyl ester-based polymerizable polymer having a radiation-polymerizable unsaturated bond in the molecule, and a radiation-polymerizable polyfunctional Examples thereof include a photocurable pressure-sensitive adhesive comprising an oligomer or a monomer as a main component.
  • the polymerizable polymer is, for example, a compound having a functional group that reacts with the functional group in the molecule and a radiation-polymerizable unsaturated bond, in advance, by synthesizing a (meth) acrylic polymer having a functional group in the molecule. It can obtain by making it react.
  • the (meth) acrylic polymer means an acrylic polymer and a methacrylic polymer.
  • the photocurable pressure-sensitive adhesive preferably contains a photopolymerization initiator in addition to the polymerizable polymer and the polyfunctional oligomer or monomer.
  • a photopolymerization initiator in addition to the polymerizable polymer and the polyfunctional oligomer or monomer.
  • the manufacturing method of the said back grind tape For example, it manufactures by apply
  • the pressure-sensitive adhesive layer can be separately produced by coating on a base material for forming a pressure-sensitive adhesive layer and then transferring it by a method such as laminating on the base material layer of the back grind tape. By laminating the adhesive film on the back grind tape thus produced, a back grind tape integrated adhesive film can be produced.
  • the back grind tape / dicing tape-integrated adhesive film 300 of the present invention includes a back grind tape / dicing tape 301 and an adhesive film 302 as shown in FIG.
  • a release film may be provided between the back grind tape / dicing tape 301 and the adhesive film 302.
  • the back grind tape / dicing tape 301 for example, heat resistance and resistance produced by polyolefin such as polyethylene and polypropylene, ethylene vinyl acetate copolymer, polyester, polyimide, polyethylene terephthalate, polyvinyl chloride, polyamide, polyurethane and the like. Any film having excellent chemical properties can be used.
  • the thickness of the back grind tape / dicing tape 1 is not particularly limited, but is usually preferably 30 ⁇ m to 500 ⁇ m.
  • the adhesive film 302 is produced by the method described in ⁇ Adhesive film> above. This was half-cut to obtain a circular adhesive film 302. Then, by laminating a back grind tape / dicing tape 301 thereon, an adhesive film with a back grind tape function and a dicing tape function composed of a back grind tape / dicing tape 301, an adhesive film 302, and a peeling substrate 321. 300 can be obtained (FIG. 8).
  • the thickness of the adhesive film 302 of the back grind tape / dicing tape-integrated adhesive film 300 formed in this way is not particularly limited, but is preferably 3 ⁇ m or more and 100 ⁇ m or less, and particularly preferably 5 ⁇ m or more and 50 ⁇ m or less. Further preferred. When the thickness is less than the lower limit value, the effect as the back grind tape / dicing tape-integrated adhesive film 300 may be reduced. When the thickness exceeds the upper limit value, it may be difficult to manufacture the product and the thickness accuracy may be reduced. is there.
  • the peeling substrate 321 of the back grind tape / dicing tape integrated adhesive film 300 obtained by the above-described method is peeled off and bonded so that the adhesive film 302 and the functional surface 331 of the semiconductor wafer 303 come into contact with each other (FIG. 9). .
  • the upper surface (upper side in FIG. 10) of the back grind tape / dicing tape 301 is fixed to the polishing stage 304 of the polishing apparatus.
  • the polishing apparatus is not particularly limited, and a commercially available apparatus can be used.
  • the thickness of the semiconductor wafer 303 after back grinding is not particularly limited, but is preferably about 10 ⁇ m to 300 ⁇ m, more preferably 10 ⁇ m to 100 ⁇ m.
  • the semiconductor wafer 303 after back grinding is placed on the dicer table 305 so that the back grind tape / dicing tape 301 is in contact with the upper surface (upper side in FIG. 11) of the dicer table 305 (FIG. 11).
  • a wafer ring 306 is installed around the semiconductor wafer 303 to fix the semiconductor wafer 303.
  • the semiconductor wafer 303 is cut with the blade 307 to divide the semiconductor wafer 303 into individual pieces to obtain a semiconductor element having the adhesive film 302.
  • the back grind tape / dicing tape-integrated adhesive film 300 has a buffering action, and prevents the semiconductor element from being cracked or chipped when the semiconductor wafer 303 is cut.
  • the semiconductor wafer 303 and the wafer ring 306 may be attached in advance to the back grind tape / dicing tape integrated adhesive film 300 and then placed on the dicer table 305.
  • the back grind tape and dicing tape integrated adhesive film 300 is stretched with an expanding device, the semiconductor elements having the adhesive film 302 separated into pieces are opened at regular intervals, and then picked up and mounted on the substrate.
  • the back grind tape and dicing tape integrated adhesive film of the present invention has a back grind tape function and a dicing tape function, and the adhesive film has flux activity, so the function of omitting the flux application process etc. have. Therefore, the flux cleaning process is unnecessary, the productivity is excellent, and the workability of the semiconductor wafer can be improved.
  • the obtained adhesive film varnish was applied to a base polyester film (base film, manufactured by Teijin DuPont Films, trade name: Purex A53) to a thickness of 50 ⁇ m, and dried at 100 ° C. for 5 minutes.
  • base film manufactured by Teijin DuPont Films, trade name: Purex A53
  • film A an adhesive film having a thickness of 25 ⁇ m was obtained.
  • the obtained adhesive film varnish was applied to a base polyester film (base film, manufactured by Teijin DuPont Films, trade name: Purex A53) to a thickness of 50 ⁇ m, and dried at 100 ° C. for 5 minutes.
  • base film manufactured by Teijin DuPont Films, trade name: Purex A53
  • film B an adhesive film having a thickness of 25 ⁇ m was obtained.
  • Example 3 ⁇ Preparation of adhesive film> 10.20 parts by weight of a phenol aralkyl resin (XLC-4L made by Mitsui Chemicals), 22.00 parts by weight of a bisphenol A type epoxy resin (EPICLON 840-S made by DIC), and a phenolic lid which is a compound having a flux activity 8.20 parts by weight of phosphorus (manufactured by Tokyo Chemical Industry Co., Ltd.), 9.30 parts by weight of an epoxy group-containing acrylic ester copolymer (manufactured by Nagase ChemteX Corp., SG-P3) as a film-forming resin, and a curing accelerator 2-methylimidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd., 2MZ-H) 0.05 part by weight, and silane coupling agent 3-methacryloxypropyltriethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., KBE
  • the obtained adhesive film varnish was applied to a base polyester film (base film, manufactured by Teijin DuPont Films, trade name: Purex A53) to a thickness of 50 ⁇ m, and dried at 100 ° C. for 5 minutes.
  • base film manufactured by Teijin DuPont Films, trade name: Purex A53
  • film C an adhesive film having a thickness of 25 ⁇ m was obtained.
  • Example 4 ⁇ Preparation of adhesive film> Bisphenol F type epoxy resin (DIC, EXA-830LVP) 19.90 parts by weight Tris (hydroxyphenyl) methane type epoxy resin (Mitsubishi Chemical Co., Ltd., jER1032H60) 19.00 parts by weight, compound having flux activity 16.30 parts by weight of trimellitic acid (manufactured by Tokyo Chemical Industry Co., Ltd.), 27.80 parts by weight of phenoxy resin (manufactured by Nippon Steel Chemical Co., Ltd., FX-280S) as a film-forming resin, and micro as a curing accelerator 6.50 parts by weight of a capsule-type curing agent (manufactured by Asahi Kasei E-Materials, NovaCure HX-3941HP) and 3-methacryloxypropyltriethoxysilane (KBE-503, Shin-Etsu Chemical Co., Ltd.) as a silane coupling agent 50 parts by weight and silica filler (manu
  • the obtained adhesive film varnish was applied to a base polyester film (base film, manufactured by Teijin DuPont Films, trade name: Purex A53) to a thickness of 50 ⁇ m, and dried at 100 ° C. for 5 minutes.
  • base film manufactured by Teijin DuPont Films, trade name: Purex A53
  • film D an adhesive film having a thickness of 25 ⁇ m was obtained.
  • the obtained adhesive film varnish was applied to a base polyester film (base film, manufactured by Teijin DuPont Films, trade name: Purex A53) to a thickness of 50 ⁇ m, and dried at 100 ° C. for 5 minutes.
  • base film manufactured by Teijin DuPont Films, trade name: Purex A53
  • film E an adhesive film having a thickness of 25 ⁇ m was obtained.
  • the obtained adhesive film varnish was applied to a base polyester film (base film, manufactured by Teijin DuPont Films, trade name: Purex A53) to a thickness of 50 ⁇ m, and dried at 100 ° C. for 5 minutes.
  • base film manufactured by Teijin DuPont Films, trade name: Purex A53
  • film F an adhesive film having a thickness of 25 ⁇ m was obtained.
  • Example 7 ⁇ Preparation of adhesive film> Cresol novolak resin (DIC, KA-1160) 7.05 parts by weight, bisphenol F-type epoxy resin (DIC, EXA-830LVP) 16.10 parts by weight, diphenolic acid (Tokyo) as a compound having flux activity (Made by Kasei Kogyo Co., Ltd.) 3.00 parts by weight, 3.20 parts by weight of an epoxy group-containing acrylate copolymer (manufactured by Nagase ChemteX Corporation, SG-80H) as a film-forming resin, and 2-phenyl as a curing accelerator 0.15 part by weight of -4-methylimidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd., “2P4MZ”) and 0.50 of 3-methacryloxypropyltriethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., KBE-503) as a silane coupling agent
  • the obtained adhesive film varnish was applied to a base polyester film (base film, manufactured by Teijin DuPont Films, trade name: Purex A53) to a thickness of 50 ⁇ m, and dried at 100 ° C. for 5 minutes.
  • base film manufactured by Teijin DuPont Films, trade name: Purex A53
  • film G an adhesive film having a thickness of 25 ⁇ m was obtained.
  • the obtained adhesive film varnish was applied to a base polyester film (base film, manufactured by Teijin DuPont Films, trade name: Purex A53) to a thickness of 50 ⁇ m, and dried at 100 ° C. for 5 minutes.
  • base film manufactured by Teijin DuPont Films, trade name: Purex A53
  • film H an adhesive film having a thickness of 25 ⁇ m was obtained.
  • Example 9 ⁇ Preparation of adhesive film> Cresol novolak resin (DIC, KA-1160) 7.55 parts by weight, acid anhydride (Mitsubishi Chemical, jER Cure YH307) 3.75 parts by weight, dicyclopentadiene type epoxy resin (DIC, EPICLON HP-7200H) 13.30 parts by weight, naphthalene type epoxy resin (manufactured by DIC, EPICLON HP-4770) 9.95 parts by weight, and epoxy group-containing acrylic ester copolymer (Nagase Chem) as a film-forming resin 9.95 parts by weight, manufactured by Tex, SG-80H), 0.10 parts by weight of 2-methylimidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd., 2MZ-H) as a curing accelerator, and 3-methacryloxypropyl as a silane coupling agent 1.00 parts by weight of triethoxysilane (Shin-Etsu Chemical Co., Ltd
  • the obtained adhesive film varnish was applied to a base polyester film (base film, manufactured by Teijin DuPont Films, trade name: Purex A53) to a thickness of 50 ⁇ m, and dried at 100 ° C. for 5 minutes.
  • base film manufactured by Teijin DuPont Films, trade name: Purex A53
  • film I an adhesive film having a thickness of 25 ⁇ m was obtained.
  • the obtained adhesive film varnish was applied to a base polyester film (base film, manufactured by Teijin DuPont Films, trade name: Purex A53) to a thickness of 50 ⁇ m, and dried at 100 ° C. for 5 minutes.
  • base film manufactured by Teijin DuPont Films, trade name: Purex A53
  • film J an adhesive film having a thickness of 25 ⁇ m
  • Example 11 ⁇ Preparation of adhesive film> 7.10 parts by weight of phenol aralkyl resin (Mitsui Chemicals Co., Millex XLC-4L), 18.25 parts by weight of bisphenol A type epoxy resin (DIC Corporation, EPICLON 840-S), and phenol phthalate as a compound having flux activity 5.10 parts by weight of phosphorus (manufactured by Tokyo Chemical Industry Co., Ltd.), 3.90 parts by weight of phenoxy resin (manufactured by Mitsubishi Chemical Corporation, YX-6654) as a film-forming resin, and 2-methylimidazole (Shikoku Chemical Industries, Ltd.) as a curing accelerator 2MZ-H) 0.15 parts by weight, 3-methacryloxypropyltriethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., KBE-503) 0.50 parts by weight as a silane coupling agent, silica filler (ADMATEX) 65.00 parts by weight of SC2050 with an
  • the obtained adhesive film varnish was applied to a base polyester film (base film, manufactured by Teijin DuPont Films, trade name: Purex A53) to a thickness of 50 ⁇ m, and dried at 100 ° C. for 5 minutes.
  • base film manufactured by Teijin DuPont Films, trade name: Purex A53
  • film K an adhesive film having a thickness of 25 ⁇ m was obtained.
  • Example 12 ⁇ Preparation of adhesive film> 11.20 parts by weight of phenol novolac resin (Sumitomo Bakelite, PR-55617), 27.70 parts by weight of bisphenol F type epoxy resin (DIC, EXA-830LVP), and naphthalene type epoxy resin (manufactured by DIC, EPICLON HP-4770) 8.20 parts by weight, diphenolic acid (manufactured by Tokyo Chemical Industry Co., Ltd.) 7.30 parts by weight, a flux-active compound, epoxy group-containing acrylic ester copolymer ( 14.60 parts by weight of Nagase ChemteX, SG-80H), 5.00 parts by weight of a microcapsule type curing agent (manufactured by Asahi Kasei E-Materials, NovaCure HX-3941HP) as a curing accelerator, and a silane coupling agent 3-Glycidoxypropyltrimethoxysilane (Shin-Etsu Chemical) Manufactured
  • the obtained adhesive film varnish was applied to a base polyester film (base film, manufactured by Teijin DuPont Films, trade name: Purex A53) to a thickness of 50 ⁇ m, and dried at 100 ° C. for 5 minutes.
  • base film manufactured by Teijin DuPont Films, trade name: Purex A53
  • film L an adhesive film having a thickness of 25 ⁇ m was obtained.
  • the obtained adhesive film varnish was applied to a base polyester film (base film, manufactured by Teijin DuPont Films, trade name: Purex A53) to a thickness of 50 ⁇ m, and dried at 100 ° C. for 5 minutes.
  • base film manufactured by Teijin DuPont Films, trade name: Purex A53
  • film M an adhesive film having a thickness of 25 ⁇ m was obtained.
  • the obtained adhesive film varnish was applied to a base polyester film (base film, manufactured by Teijin DuPont Films, trade name: Purex A53) to a thickness of 50 ⁇ m, and dried at 100 ° C. for 5 minutes.
  • base film manufactured by Teijin DuPont Films, trade name: Purex A53
  • film N an adhesive film having a thickness of 25 ⁇ m was obtained.
  • the obtained adhesive film varnish was applied to a base polyester film (base film, manufactured by Teijin DuPont Films, trade name: Purex A53) to a thickness of 50 ⁇ m, and dried at 100 ° C. for 5 minutes.
  • base film manufactured by Teijin DuPont Films, trade name: Purex A53
  • film O an adhesive film having a thickness of 25 ⁇ m was obtained.
  • the obtained adhesive film varnish was applied to a base polyester film (base film, manufactured by Teijin DuPont Films, trade name: Purex A53) to a thickness of 50 ⁇ m, and dried at 100 ° C. for 5 minutes.
  • base film manufactured by Teijin DuPont Films, trade name: Purex A53
  • film P an adhesive film having a thickness of 25 ⁇ m was obtained.
  • the obtained adhesive film varnish was applied to a base polyester film (base film, manufactured by Teijin DuPont Films, trade name: Purex A53) to a thickness of 50 ⁇ m, and dried at 100 ° C. for 5 minutes.
  • base film manufactured by Teijin DuPont Films, trade name: Purex A53
  • film Q an adhesive film having a thickness of 25 ⁇ m was obtained.
  • the obtained adhesive film varnish was applied to a base polyester film (base film, manufactured by Teijin DuPont Films, trade name: Purex A53) to a thickness of 50 ⁇ m, and dried at 100 ° C. for 5 minutes. Then, after obtaining an adhesive film having a thickness of 25 ⁇ m (hereinafter referred to as film R), the surface of the obtained film was subjected to corona treatment.
  • base film manufactured by Teijin DuPont Films, trade name: Purex A53
  • film R an adhesive film having a thickness of 25 ⁇ m
  • ⁇ Melt viscosity measurement> A sample for measurement having a thickness of 100 ⁇ m was prepared by laminating the adhesive films obtained in each Example and Comparative Example, and using a viscoelasticity measuring apparatus (“MARS” manufactured by Thermo Fisher Scientific Co.), a parallel plate 20 mm ⁇ The melt viscosity was measured under the conditions of a gap of 0.05 mm, a frequency of 0.1 Hz, and a heating rate of 10 ° C./minute, and the lowest melt viscosity was taken as the measured value. The results are shown in Tables 1 and 2. ⁇ Measurement of average linear expansion coefficient> The adhesive films obtained in each Example and Comparative Example were treated at 180 ° C.
  • the semiconductor device 100 was manufactured with the following method. First, a plurality of types of silicon wafers A to C (diameter: 8 inches, thickness: 100 ⁇ m, semiconductor chip) having a plurality of first terminals each having a solder made of an alloy containing tin and silver as a low melting point conductive metal on the surface. Size 10 mm ⁇ 10 mm, height of first terminal, width of first terminal, composition of low melting point metal composition covering first terminal surface, width of metal composition, distance between metal compositions, first Table 3 shows the distance between one terminal, the number of first terminals per one semiconductor chip, and the like.
  • the adhesive film and the silicon wafer were laminated so that the adhesive film cut in advance to the same size as the silicon wafer was in contact with the surface having the first terminal of each silicon wafer.
  • This was laminated with a laminator at a bonding temperature of 80 ° C., a pressure of 0.8 MPa, and 2 mm / s to obtain a laminate 37 of an adhesive film and a silicon wafer.
  • a dicing tape was bonded to the surface of each silicon wafer opposite to the surface bonded to the adhesive film with a laminator.
  • the bonding temperature was 25 ° C.
  • the pressure was 0.8 MPa
  • the laminate of the 2 mm / s adhesive film and the silicon wafer, and the dicing tape were bonded together.
  • the dicing tape was fixed to the wafer ring, laminated on a dicing table of a dicing saw (DFD6360, manufactured by DISCO Corporation), the silicon wafer was fixed, and the base material layer was peeled off. Further, the silicon wafer was diced (cut) under the following conditions using a dicing saw. As a result, the silicon wafer was singulated, and a semiconductor chip 20 having the following dicing size was obtained.
  • a dicing saw D6360, manufactured by DISCO Corporation
  • one of the semiconductor chips was pushed up with a needle from the support film side (back side) of the dicing tape-integrated adhesive film, and the pushed-up surface of the semiconductor chip was pulled up while being adsorbed by a collet of a die bonder.
  • the picked-up semiconductor chip was inverted so that the copper bumps and the adhesive film were on the lower side.
  • a plurality of types of interposers having pads corresponding to the arrangement of the first terminals in the plurality of types of semiconductor chips are prepared, and the pads of the interposer and the plurality of first terminals of each semiconductor chip are in contact with each other.
  • the semiconductor chip was affixed to the interposer at 150 ° C.
  • the semiconductor chip was thermocompression bonded at 30 N at 235 ° C. for 5 seconds with a flip chip bonder head to melt the bump surface alloy, and the semiconductor chip and the interposer were soldered.
  • the adhesive film is cured by heating in an atmosphere of fluid pressure (pneumatic pressure) of 0.8 MPa at 180 ° C. for 60 minutes, and the semiconductor chip 20, the interposer 30, the semiconductor chip 20 and the interposer 30, a cured product layer (sealing layer) 80 of the adhesive film 10 interposed therebetween, but a cured product 38 of a laminate was obtained.
  • the semiconductor device 100 including the cured product 38 of the laminated body, in which the semiconductor chip 20 and the interposer 30 were sealed with the cured product of the adhesive film 10, was obtained.
  • connection part About the semiconductor device 100 obtained using the adhesive film of each Example and a comparative example, it cut
  • Each code is as follows. A: There was no displacement in all 20 connections. ⁇ : Position shift was confirmed in the connection part of 1 piece or more and 3 pieces or less. X: The position shift was confirmed by the 4 or more connection part.
  • Adhesive film 20
  • Semiconductor chip (electronic component) 21
  • First terminal 22
  • Alignment mark 30
  • Interposer (circuit component) 31
  • Second terminal 32
  • Substrate 33
  • Wiring circuit 34
  • Electrode pad 35
  • Insulating portion 36
  • Alignment mark 37
  • Laminated body 38
  • Hardened product of laminated body 40
  • Semiconductor wafer (aggregate of plural electronic components 20) 50
  • Dicing sheet 51
  • Wafer ring 52
  • Dicing blade 53
  • Cut part 70
  • Bump 80
  • Sealing layer (hardened material layer of adhesive film)
  • DESCRIPTION OF SYMBOLS 81
  • Connection part 100
  • Semiconductor device 210
  • Dicing tape integrated adhesive film 211
  • Adhesive film 213 Dicing tape 213a
  • Dicing tape base material layer 213b
  • Dicing tape adhesion layer 300
  • Semiconductor film 301

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  • Wire Bonding (AREA)
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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
PCT/JP2014/055629 2013-03-07 2014-03-05 接着フィルム、ダイシングシート一体型接着フィルム、バックグラインドテープ一体型接着フィルム、バックグラインドテープ兼ダイシングシート一体型接着フィルム、積層体、積層体の硬化物、および半導体装置、並び半導体装置の製造方法 WO2014136836A1 (ja)

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CN111716242A (zh) * 2019-03-22 2020-09-29 日东电工株式会社 背面研磨带
JP7472954B2 (ja) 2018-01-30 2024-04-23 株式会社レゾナック 接着剤組成物、フィルム状接着剤、接着シート、及び半導体装置の製造方法

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JP7046586B2 (ja) * 2017-12-14 2022-04-04 日東電工株式会社 接着フィルムおよびダイシングテープ付き接着フィルム
KR102637855B1 (ko) * 2018-03-23 2024-02-16 린텍 가부시키가이샤 필름상 접착제 및 반도체 가공용 시트
KR102204964B1 (ko) 2018-04-17 2021-01-19 주식회사 엘지화학 반도체 회로 접속용 접착제 조성물 및 이를 포함한 접착 필름
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