JP5515811B2 - 半導体装置の製造方法及び回路部材接続用接着シート - Google Patents
半導体装置の製造方法及び回路部材接続用接着シート Download PDFInfo
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- JP5515811B2 JP5515811B2 JP2010024428A JP2010024428A JP5515811B2 JP 5515811 B2 JP5515811 B2 JP 5515811B2 JP 2010024428 A JP2010024428 A JP 2010024428A JP 2010024428 A JP2010024428 A JP 2010024428A JP 5515811 B2 JP5515811 B2 JP 5515811B2
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- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
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- 239000005056 polyisocyanate Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
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Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/731—Location prior to the connecting process
- H01L2224/73101—Location prior to the connecting process on the same surface
- H01L2224/73103—Bump and layer connectors
- H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- Engineering & Computer Science (AREA)
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Description
(作製例1)
まず、シクロヘキサノンに、「HTR−860P−3」(ナガセケムテックス(株)製商品名、グリシジル基含有アクリルゴム、重量平均分子量80万、Tg−7℃)100質量部、「1032−H60」(ジャパンエポキシレジン(株)製商品名、高純度特殊多官能エポキシ樹脂、エポキシ当量169)160質量部、「DPN−M」(日本化薬(株)製商品名、ジシクロペンタジエン型フェノール樹脂、エポキシ当量175)140質量部、「A−DPH」(新中村化学工業(株)製商品名、ジペンタエリスリトールヘキサアクリレート)30質量部、硬化促進剤としてイミダゾール化合物「2PZ−CN」(四国化成(株)製商品名)3質量部、光開始剤として「Irg−184」(チバスペシャリティーケミカルズ(株)製商品名)1.5質量部を加えて攪拌混合し、更に真空脱気することにより、粘接着剤ワニスを得た。
作製例1における軟質ポリオレフィンフィルムに代えて、光透過性を有する厚さ100μmのプラスチックシート(ロンシール社製、軟質ポリオレフィンフィルム:POF−230A)を用いた以外は作製例1と同様にして、回路部材接続用接着シートを得た。
作製例1における軟質ポリオレフィンフィルムに代えて、光透過性を有する厚さ100μmのプラスチックシート(サーモ(株)製、低密度ポリエチレン/酢酸ビニル/低密度ポリエチレン三層フィルム:FHF−100)を用いた以外は作製例1と同様にして、回路部材接続用接着シートを得た。
作製例1における軟質ポリオレフィンフィルムに代えて、厚さ100μmのプラスチックシート(ニチアス株式会社製、ナフロンテープ:TOMBO No.9001)を用いた以外は作製例1と同様にして、回路部材接続用接着シートを得た。
作製例1における軟質ポリオレフィンフィルムに代えて、表面粗さを変更したプラスチックシート(ロンシール社製、軟質ポリオレフィンフィルム:POF−120A)を用いた以外は作製例1と同様にして、回路部材接続用接着シートを得た。
作製例1における粘接着剤層の厚みを100μmに変更した以外は作製例1と同様にして、回路部材接続用接着シートを得た。
作製例1における軟質ポリオレフィンフィルムに代えて、光透過性を有する厚さ80μmのプラスチックシート(帝人デュポンフィルム(株)製、ポリエチレンテレフタレートテイジンテトロンフィルム:G2)を用いた以外は作製例1と同様にして、回路部材接続用接着シートを得た。
作製例1における軟質ポリオレフィンフィルムに代えて、光透過性を有する厚さ75μmのプラスチックシート(タマポリ(株)製、オレフィン系フィルム:OPP)を用いた以外は作製例1と同様にして、回路部材接続用接着シートを得た。
作製例1における軟質ポリオレフィンフィルムに代えて、光透過性を有する厚さ100μmのプラスチックシート(三井化学社製、TPX系フィルム:X−22)を用いた以外は作製例1と同様にして、回路部材接続用接着シートを得た。
まず、高分子量成分としてフェノキシ樹脂「FX293」(東都化成株式会社製、製品名)100質量部、熱硬化性樹脂のエポキシ樹脂として「1032H60」(ジャパンエポキシレジン株式会社製、製品名)80質量部及び「YL−980」(ジャパンエポキシレジン株式会社製、製品名)60質量部、光硬化性樹脂として「A−DPH」(新中村工業化学株式会社製、製品名)80質量部、光開始剤として「Irg−184」(チバスペシャリティーケミカルズ(株)製、製品名)4.0質量部、マイクロカプセル型硬化促進剤として「HX−3941HP」(旭化成ケミカルズ株式会社製、製品名)160質量部入れ、トルエンと酢酸エチルの混合溶媒中に溶解して接着剤組成物のワニスを得た。
1cm×5cmのシートを測定用試料とし、この試料の両側1cmずつを固定し、(株)オリエンテック製のテンシロンを用いて測定温度:25℃、測定速度:100mm/分の条件で引っ張り強度測定を行い、横軸:伸び(%)、縦軸:応力(MPa)の関係を求め、測定用試料を1mm伸ばしたとき(3.3%)の点AからX軸方向にのびる法線の延長と、初期の傾きが最も大きい接線との交点に対応する応力B(MPa)を、プラスチックシートの弾性率とした(図6を参照)。
測定用のシートをスライドガラス上に水を介して接触させ、菱化システム社製の三次元非接触表面形状計測システムMM3500を用いて、カットオフ値4μmの条件でシート表面の10箇所(任意の約300μm×300μmの範囲)を各1回づつ測定し、測定後の画像データに2次の面補正をかけた後、Raの平均値を求め、これをプラスチックシートの表面粗さとした。
(実施例1〜7)
上記作製例1〜6、10で得られた回路部材接続用接着シートをそれぞれ、下記仕様のウェハ1に、ラミネーターを用いて80℃、線圧1.0kgf/cm、送り速度0.5m/分で貼りつけた。
ウェハ1:半導体ウェハ(8インチ:直径150mm、厚さ150μm)上に、高さ25μmの銅バンプが形成され、この銅バンプ上に高さ15μmのはんだボールが載せられたもの。
○:ボイドは見られず、はんだボールの先端が粘接着剤層を突き抜けている。
△1:ボイドはわずかに見られたが、はんだボールの先端が粘接着剤層を突き抜けている。
△2:ボイドは見られないが、はんだボールの先端が粘接着剤層を突き抜けていない。
×:ボイドが見られ、はんだボールの先端が粘接着剤層を突き抜けていない。
上記作製例1で得られた回路部材接続用接着シートを、下記仕様のウェハ2に、ラミネーターを用いて80℃、線圧1.0kgf/cm、送り速度0.5m/分で貼りつけた。
ウェハ2:半導体ウェハ(8インチ:直径150mm、厚さ150μm)上に、高さ35μmの銅バンプが形成され、この銅バンプ上に高さ15μmのはんだボールが載せられたもの。
上記作製例7〜9で得られた回路部材接続用接着シートをそれぞれ、上記仕様のウェハ1に、ラミネーターを用いて80℃、線圧1.0kgf/cm、送り速度0.5m/分で貼りつけた。
Claims (7)
- バンプと該バンプ上に設けられたはんだボールとからなる突起電極を有する半導体ウェハの前記突起電極が形成されている面上に、粘接着剤層及び弾性率が450MPa以下であるプラスチックシートをこの順に備える接着シートを、前記粘接着剤層が前記突起電極を埋めるように貼り付ける工程と、
前記接着シートが貼り付けられた前記半導体ウェハの前記突起電極が形成されている側とは反対側の面を研磨して前記半導体ウェハを薄厚化する工程と、
前記薄厚化した半導体ウェハ及び前記粘接着剤層を切断して粘接着剤付き半導体素子を得る工程と、
配線回路基板上に前記粘接着剤付き半導体素子を熱圧着して、前記配線回路基板と前記半導体素子とが前記はんだボールを介して電気的に接続され、前記配線回路基板と前記半導体素子との間が粘接着剤により封止された構造を有する半導体装置を得る工程と、
を備える、半導体装置の製造方法。 - 前記粘接着剤層が、重量平均分子量2万以上100万以下の高分子量成分と、熱硬化性樹脂と、硬化促進剤と、光反応性モノマーと、光開始剤と、を含有する、請求項1に記載の半導体装置の製造方法。
- 前記プラスチックシートの前記粘接着剤層側の表面粗さが、350nm以下である、請求項1又は2に記載の半導体装置の製造方法。
- 前記粘接着剤層の厚みが、前記バンプ及び前記はんだボールの合計高さよりも小さく、且つ、前記粘接着剤層及び前記プラスチックシートの合計厚みが、前記合計高さよりも大きい、請求項1〜3のいずれか一項に記載の半導体装置の製造方法。
- 請求項1に記載の半導体装置の製造方法における前記接着シートとして用いられ、
弾性率が450MPa以下であるプラスチックシートと、該シート上に設けられた粘接着剤層と、を備える、回路部材接続用接着シート。 - 前記粘接着剤層が、重量平均分子量2万以上100万以下の高分子量成分と、熱硬化性樹脂と、硬化促進剤と、光反応性モノマーと、光開始剤と、を含有する、請求項5に記載の回路部材接続用接着シート。
- 前記プラスチックシートの前記粘接着剤層側の表面粗さが、350nm以下である、請求項5又は6に記載の回路部材接続用接着シート。
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WO2019098334A1 (ja) * | 2017-11-17 | 2019-05-23 | リンテック株式会社 | 第1保護膜付き半導体チップ、第1保護膜付き半導体チップの製造方法、及び半導体チップ・第1保護膜積層体の評価方法 |
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JP2013073955A (ja) * | 2011-09-26 | 2013-04-22 | Hitachi Chemical Co Ltd | 回路接続構造体の製造方法 |
WO2014019598A1 (de) | 2012-07-30 | 2014-02-06 | Erich Thallner | Substratverbund, verfahren und vorrichtung zum bonden von substraten |
WO2014136836A1 (ja) * | 2013-03-07 | 2014-09-12 | 住友ベークライト株式会社 | 接着フィルム、ダイシングシート一体型接着フィルム、バックグラインドテープ一体型接着フィルム、バックグラインドテープ兼ダイシングシート一体型接着フィルム、積層体、積層体の硬化物、および半導体装置、並び半導体装置の製造方法 |
WO2015154271A1 (en) * | 2014-04-10 | 2015-10-15 | GM Global Technology Operations LLC | Systems and methods for reinforced adhesive bonding |
WO2019098326A1 (ja) * | 2017-11-17 | 2019-05-23 | リンテック株式会社 | 第1保護膜付き半導体チップ、第1保護膜付き半導体チップの製造方法、及び半導体チップ・第1保護膜積層体の評価方法 |
WO2021200786A1 (ja) * | 2020-03-30 | 2021-10-07 | リンテック株式会社 | 粘着シート |
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WO2019098334A1 (ja) * | 2017-11-17 | 2019-05-23 | リンテック株式会社 | 第1保護膜付き半導体チップ、第1保護膜付き半導体チップの製造方法、及び半導体チップ・第1保護膜積層体の評価方法 |
KR20200078529A (ko) | 2017-11-17 | 2020-07-01 | 린텍 가부시키가이샤 | 제1 보호막이 형성된 반도체 칩, 제1 보호막이 형성된 반도체 칩의 제조 방법, 및 반도체 칩 제1 보호막 적층체의 평가 방법 |
JPWO2019098334A1 (ja) * | 2017-11-17 | 2020-11-19 | リンテック株式会社 | 第1保護膜付き半導体チップ、第1保護膜付き半導体チップの製造方法、及び半導体チップ・第1保護膜積層体の評価方法 |
JP7218297B2 (ja) | 2017-11-17 | 2023-02-06 | リンテック株式会社 | 第1保護膜付き半導体チップ、第1保護膜付き半導体チップの製造方法、及び半導体チップ・第1保護膜積層体の評価方法 |
KR102616422B1 (ko) * | 2017-11-17 | 2023-12-20 | 린텍 가부시키가이샤 | 제1 보호막이 형성된 반도체 칩, 제1 보호막이 형성된 반도체 칩의 제조 방법, 및 반도체 칩 제1 보호막 적층체의 평가 방법 |
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