WO2014129259A1 - 成膜方法、コンピュータ記憶媒体及び成膜システム - Google Patents
成膜方法、コンピュータ記憶媒体及び成膜システム Download PDFInfo
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- WO2014129259A1 WO2014129259A1 PCT/JP2014/051361 JP2014051361W WO2014129259A1 WO 2014129259 A1 WO2014129259 A1 WO 2014129259A1 JP 2014051361 W JP2014051361 W JP 2014051361W WO 2014129259 A1 WO2014129259 A1 WO 2014129259A1
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- film
- ultraviolet irradiation
- heat treatment
- organic film
- wafer
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- 238000000034 method Methods 0.000 title claims description 64
- 238000003860 storage Methods 0.000 title claims description 6
- 239000011368 organic material Substances 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000012545 processing Methods 0.000 claims description 132
- 238000010438 heat treatment Methods 0.000 claims description 118
- 238000000576 coating method Methods 0.000 claims description 37
- 239000011248 coating agent Substances 0.000 claims description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 239000011810 insulating material Substances 0.000 claims description 10
- 238000005259 measurement Methods 0.000 claims description 10
- 230000005855 radiation Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 178
- 238000012546 transfer Methods 0.000 description 23
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- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
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- 230000001590 oxidative effect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
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- 230000003287 optical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- 238000011161 development Methods 0.000 description 1
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- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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- 230000036632 reaction speed Effects 0.000 description 1
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- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
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Definitions
- the present invention relates to a film forming method for forming an organic film on a substrate having a pattern formed on a surface, a computer storage medium, and a film forming system for executing the film forming method.
- This application claims priority based on Japanese Patent Application No. 2013-033216 for which it applied to Japan on February 22, 2013, and uses the content here.
- a resist coating process for applying a resist solution on a semiconductor wafer (hereinafter referred to as “wafer”) to form a resist film, and exposing a predetermined pattern on the resist film
- An exposure process for developing and a development process for developing the exposed resist film are sequentially performed to form a predetermined resist pattern on the wafer.
- the wafer is etched, and then the resist film is removed to form a predetermined pattern on the wafer.
- the process of forming a predetermined pattern in a predetermined layer is repeated a plurality of times, and a semiconductor device having a multilayer wiring structure is manufactured.
- the (n + 1) -th layer resist film is formed at an appropriate height after the predetermined pattern is formed on the n-th layer.
- the surface to which the resist solution is applied needs to be flat.
- an organic film is formed on a predetermined pattern of a wafer and the surface thereof is flattened.
- Such an organic film is formed by applying an organic material on the wafer, heating the applied organic material to form the organic film, and further etching the organic film by, for example, dry etching (reactive ion etching). This is performed by backing and removing the surface of the organic film (Patent Document 1).
- an SOC (Spin On Cap) film, an SOG (Spin On Glass) film, or the like is used as the organic film.
- Patent Document 1 When the method described in Patent Document 1 described above is used, the application of the organic material and the heating of the organic material are performed in a normal pressure atmosphere, whereas the etch back of the organic film is performed in a vacuum atmosphere. Then, it is necessary to carry out the processing under the normal pressure atmosphere and the processing under the vacuum atmosphere by separate systems and transport the wafer between the systems. For this reason, the manufacturing cost of the system increases, and the throughput of wafer processing also decreases.
- the present invention has been made in view of such a point, and an object thereof is to appropriately and efficiently form an organic film on a substrate having a pattern formed on the surface thereof.
- the present invention provides a film forming method for forming an organic film on a substrate having a pattern formed on a surface thereof, a coating treatment step for applying an organic material on the substrate, A heat treatment step of heat-treating the organic material to form an organic film on the substrate; and thereafter, an ultraviolet irradiation step of performing an ultraviolet irradiation treatment on the organic film and removing the surface of the organic film to a predetermined depth.
- the organic film is subjected to ultraviolet irradiation treatment in the ultraviolet irradiation step. That is, irradiation with ultraviolet rays generates active oxygen and ozone in the processing atmosphere, and the surface of the organic film is decomposed and removed by these active oxygen and ozone. Then, the surface of the organic film is removed so that the difference between the surface height in the region in which the pattern is formed and the surface height in the region in which the pattern depression is formed is within a predetermined range. Then, even when an organic film is formed on a substrate having a pattern formed on the surface, the surface of the organic film can be planarized.
- the substrate and the film on the substrate are not damaged as in the case of the conventional dry etching method, and the film on the substrate is further modified. There is no fear. Therefore, an organic film can be appropriately formed on the substrate.
- the coating treatment process, the heat treatment process, and the ultraviolet irradiation process can all be performed under a normal pressure atmosphere, and these processes can be performed in one system. Therefore, the manufacturing cost of the system can be reduced, and the throughput of the substrate processing can be improved.
- Another aspect of the present invention is a readable computer storage medium that stores a program that operates on a computer of a control unit that controls the film forming system so that the film forming method is executed by the film forming system.
- the present invention provides a film forming system for forming an organic film on a substrate having a pattern formed on a surface thereof, a coating processing unit for applying an organic material on the substrate, and heat-treating the organic material. Then, a heat treatment section for forming an organic film on the substrate, an ultraviolet irradiation section for performing ultraviolet irradiation treatment on the organic film, the coating treatment, the heat treatment and the ultraviolet irradiation treatment are performed in this order, and the ultraviolet irradiation is performed. And a control unit that controls the coating processing unit, the heat treatment unit, and the ultraviolet irradiation unit so as to remove the surface of the organic film to a predetermined depth in the processing.
- an organic film can be appropriately and efficiently formed on a substrate having a pattern formed on the surface.
- It shows a state in which an organic film is formed on the top, (e) shows a state in which the surface of the organic film has been removed by performing a second ultraviolet irradiation treatment, and (f) has performed an n-th ultraviolet irradiation treatment. A state where the surface of the organic film is removed is shown, and (g) a state where a predetermined organic film is formed on the wafer.
- It is a longitudinal cross-sectional view which shows the outline of a structure of the wafer processing apparatus concerning other embodiment. It is a side view which shows the outline of the internal structure of the film-forming system concerning other embodiment. It is a longitudinal cross-sectional view which shows the outline of a structure of the wafer processing apparatus concerning other embodiment. It is a longitudinal cross-sectional view which shows the outline of a structure of the wafer processing apparatus concerning other embodiment. It is a longitudinal cross-sectional view which shows the outline of a structure of the wafer processing apparatus concerning other embodiment. It is a longitudinal cross-sectional view which shows the outline of
- FIG. 1 is a plan view showing an outline of a configuration of a film forming system 1 according to the present embodiment.
- 2 and 3 are side views showing an outline of the internal configuration of the film forming system 1.
- FIG. 1 In the film forming system 1 of the present embodiment, a case where an organic film that is an SOC film is formed on a wafer W as a substrate will be described.
- a predetermined pattern such as a SiO 2 film is formed in advance on the wafer W processed by the film forming system 1.
- the film forming system 1 carries a plurality of, for example, 25 wafers W between the outside and the film forming system 1 in a cassette unit, and carries a wafer W into and out of the cassette C.
- the cassette station 2 and the processing station 3 including a plurality of processing apparatuses that perform predetermined processing on the wafer W are integrally connected.
- the cassette station 2 is provided with a cassette mounting table 10.
- the cassette mounting table 10 can mount a plurality of cassettes C in a row in the X direction (vertical direction in FIG. 1). That is, the cassette station 2 is configured to be capable of holding a plurality of wafers W.
- the cassette station 2 is provided with a wafer transfer body 12 that can move on a transfer path 11 extending in the X direction.
- the wafer transfer body 12 is also movable in the vertical direction and around the vertical direction ( ⁇ direction), and can transfer the wafer W between the cassette C and the processing station 3.
- the processing station 3 is provided with a wafer transfer device 20 at the center thereof.
- a wafer transfer device 20 Around the wafer transfer device 20, for example, four processing blocks G1 to G4 in which various processing devices are arranged in multiple stages are arranged.
- the first processing block G1 and the second processing block G2 are sequentially arranged from the cassette station 2 side.
- a third processing block G3 and a fourth processing block G4 are arranged in this order from the cassette station 2 side on the back side of the processing station 3 (positive side in the X direction in FIG. 1).
- a delivery device 21 for delivering the wafer W is disposed on the cassette station 2 side of the processing station 3.
- the wafer transfer device 20 can transfer the wafer W to various processing devices (to be described later) disposed in these processing blocks G1 to G4 and the delivery device 21.
- the first processing block G1 includes a plurality of liquid processing apparatuses, for example, coating processing apparatuses 30 and 31 as coating processing units that apply an organic material for forming an organic film on the wafer W. Are stacked in two stages.
- the coating processing apparatuses 32 and 33 are stacked in two stages in order from the bottom.
- chemical chambers 34 and 35 for supplying organic materials to the coating processing apparatuses 30 to 33 are provided at the lowermost stages of the first processing block G1 and the second processing block G2, respectively.
- the organic material is, for example, a liquid obtained by dissolving a composition of an SOC film, which is an organic film, in a predetermined solvent.
- the wafer W is heat-treated, and the wafer processing apparatuses 40, 41, and 42 that perform ultraviolet irradiation processing on the wafer W and the temperature of the wafer W are adjusted.
- the temperature control devices 43 and 44 are stacked in five stages in order from the bottom.
- wafer processing devices 50, 51, 52 and temperature control devices 53, 54 are stacked in five stages in order from the bottom.
- the coating processing apparatus 30 includes a processing container 100 that can seal the inside.
- a loading / unloading port (not shown) for the wafer W is formed on the side surface of the processing container 100 on the wafer transfer device 20 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port.
- a spin chuck 110 that holds and rotates the wafer W is provided at the center of the processing container 100.
- the spin chuck 110 has a horizontal upper surface, and a suction port (not shown) for sucking, for example, the wafer W is provided on the upper surface. By suction from the suction port, the wafer W can be sucked and held on the spin chuck 110.
- a chuck driving unit 111 including a motor is provided below the spin chuck 110.
- the spin chuck 110 can be rotated at a predetermined speed by the chuck driving unit 111.
- the chuck driving unit 111 is provided with an elevating drive source such as a cylinder, and the spin chuck 110 is movable up and down.
- a cup 112 that receives and collects the liquid scattered or dropped from the wafer W.
- a discharge pipe 113 for discharging the collected liquid
- an exhaust pipe 114 for evacuating and exhausting the atmosphere in the cup 112.
- a rail 120 extending along the Y direction is formed on the X direction negative direction (downward direction in FIG. 5) side of the cup 112.
- the rail 120 is formed, for example, from the outer side of the cup 112 in the Y direction negative direction (left direction in FIG. 5) to the outer side in the Y direction positive direction (right direction in FIG. 5).
- An arm 121 is attached to the rail 120.
- the arm 121 supports an application nozzle 122 for supplying an organic material onto the wafer W as shown in FIGS.
- the arm 121 is movable on the rail 120 by a nozzle driving unit 123 shown in FIG.
- the coating nozzle 122 can move from the standby part 124 installed outside the cup 112 on the positive side in the Y direction to the upper part of the center of the wafer W in the cup 112, and further on the wafer W. It can move in the radial direction.
- the arm 121 can be moved up and down by a nozzle driving unit 123, and the height of the coating nozzle 122 can be adjusted.
- a supply pipe 125 that supplies an organic material to the application nozzle 122 is connected to the application nozzle 122.
- the supply pipe 125 communicates with an organic material supply source 126 that stores an organic material therein.
- the supply pipe 125 is provided with a supply device group 127 including a valve for controlling the flow of the organic material, a flow rate adjusting unit, and the like.
- a back rinse nozzle (not shown) for injecting a cleaning liquid toward the back surface of the wafer W may be provided below the spin chuck 110.
- the back surface of the wafer W and the outer peripheral portion of the wafer W are cleaned by the cleaning liquid sprayed from the back rinse nozzle.
- the configuration of the coating processing apparatuses 31 to 33 is the same as the configuration of the coating processing apparatus 30 described above, and a description thereof will be omitted.
- the wafer processing apparatus 40 has a processing container 130 whose inside can be closed.
- a loading / unloading port (not shown) for the wafer W is formed on the side surface of the processing container 130 on the wafer transfer device 20 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port.
- a gas supply port 131 for supplying, for example, oxidizing gas into the processing container 130 is formed on the ceiling surface of the processing container 130.
- a gas supply pipe 133 communicating with the gas supply source 132 is connected to the gas supply port 131.
- the gas supply pipe 133 is provided with a supply device group 134 including a valve for controlling the flow of the oxidizing gas, a flow rate adjusting unit, and the like.
- a gas having an oxygen concentration higher than that of normal air is used as the oxidizing gas.
- the inside of the processing container 130 may be set to an atmospheric atmosphere without supplying a specific gas into the processing container 130.
- the gas supply port 131, the gas supply source 132, and the gas supply pipe 133 are used.
- the supply device group 134 may be omitted.
- the gas supply port 131 is provided on the first heat treatment unit 140 side described later, but may be provided on the ultraviolet irradiation unit 142 side.
- a downflow occurs due to the supply of the oxidizing gas from the gas supply port 131, and a sublimate generated from the organic film when the surface of the organic film on the wafer W is removed by ultraviolet irradiation processing as will be described later. Or the like can be prevented from adhering to the ultraviolet irradiation unit 142.
- a suction port 135 that sucks the atmosphere inside the processing container 130 is formed on the bottom surface of the processing container 130.
- An intake pipe 137 communicating with a negative pressure generator 136 such as a vacuum pump is connected to the intake port 135.
- a first heat treatment unit 140 Inside the processing vessel 130, a first heat treatment unit 140, a second heat treatment unit 141 as another heat treatment unit, and an ultraviolet irradiation unit 142 are provided.
- the first heat treatment unit 140 and the second heat treatment unit 141 are arranged side by side in the Y direction, and the ultraviolet irradiation unit 142 is arranged above the second heat treatment unit 141.
- the first heat treatment unit 140 heats the organic material coated on the wafer W in the coating processing apparatuses 30 to 33 to form an organic film on the wafer W.
- the first heat treatment unit 140 includes an annular holding member 151 that houses the hot plate 150 and holds the outer periphery of the hot plate 150, and a substantially cylindrical support ring 152 that surrounds the outer periphery of the holding member 151. .
- the hot plate 150 has a thick and substantially disk shape, and can place and heat the wafer W thereon.
- the heating plate 150 includes, for example, a heating mechanism 153.
- a heating mechanism 153 for example, a heater is used.
- the heating temperature of the hot plate 150 is controlled by the control unit 200, for example, and the wafer W placed on the hot plate 150 is heated to a predetermined temperature.
- the raising / lowering pin 160 can be moved up and down by the raising / lowering drive part 161. Near the center of the hot plate 150, through holes 162 that penetrate the hot plate 150 in the thickness direction are formed, for example, at three locations. The elevating pin 160 is inserted through the through hole 162 and can protrude from the upper surface of the hot plate 150.
- the second heat treatment unit 141 heats the organic film on the wafer W when performing the ultraviolet irradiation process by the ultraviolet irradiation unit 142 after performing the heat treatment in the first heat treatment unit 140.
- the second heat treatment unit 141 has the same configuration as the first heat treatment unit 140. That is, the second heat treatment unit 141 includes a heat plate 170 as a heat treatment plate, a holding member 171, a support ring 172, and a heating mechanism 173. Further, an elevating pin 180 and an elevating drive unit 181 are provided below the hot plate 170, and a through hole 182 is formed near the center of the hot plate 170.
- the ultraviolet irradiation unit 142 irradiates ultraviolet rays having a wavelength of 172 nm, for example. Then, after performing heat treatment in the first heat treatment unit 140, the ultraviolet irradiation unit 142 performs ultraviolet irradiation processing on the organic film on the wafer W.
- the ultraviolet irradiation unit 142 is supported and provided on the ceiling surface of the processing vessel 130, but the ultraviolet irradiation unit 142 is provided on a glass window (not shown) provided on the ceiling surface of the processing vessel 130. It may be provided above. In such a case, the ultraviolet rays irradiated from the ultraviolet irradiation unit 142 enter the processing container 130 through the glass window.
- a transfer mechanism (not shown) for transferring the wafer W between the first heat treatment unit 140 and the second heat treatment unit 141 is provided inside the processing container 130.
- the wafer W may be transferred between the first heat treatment unit 140 and the second heat treatment unit 141 by the wafer transfer device 20.
- the configuration of the wafer processing apparatuses 41, 42, 50 to 52 is the same as the configuration of the wafer processing apparatus 40 described above, and the description thereof is omitted.
- the control unit 200 is a computer, for example, and has a program storage unit (not shown).
- the program storage unit stores a program for executing the film forming process in the film forming system 1.
- the program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnet optical desk (MO), memory card, or the like. May have been installed in the control unit 200 from the storage medium H.
- a computer-readable storage medium H such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnet optical desk (MO), memory card, or the like. May have been installed in the control unit 200 from the storage medium H.
- FIG. 8 shows the state of the wafer W before being processed by the film forming system 1
- FIG. 9 shows the state of the wafer W in each step of the film forming process.
- a predetermined pattern P such as a SiO 2 film is formed in advance on the wafer W to be processed by the film forming system 1 as shown in FIG.
- the pattern P is formed sparsely and densely on the wafer W, and the recess portion of the pattern P is not formed on the wafer W.
- the wafer W is taken out from the cassette C on the cassette mounting table 10 by the wafer transfer body 12 and transferred to the delivery device 21 of the processing station 3. Thereafter, the wafer W is transferred to the temperature adjustment device 43 by the wafer transfer device 20 and the temperature is adjusted to a predetermined temperature.
- the wafer W is transferred to the coating processing apparatus 30 by the wafer transfer apparatus 20.
- the wafer W carried into the coating processing apparatus 30 is transferred from the wafer transfer apparatus 20 to the spin chuck 110 and is sucked and held.
- the coating nozzle 122 of the standby unit 124 is moved to above the center portion of the wafer W by the arm 121.
- the organic material is supplied onto the wafer W from the coating nozzle 122 while rotating the wafer W by the spin chuck 110.
- the supplied organic material is diffused over the entire surface of the wafer W by centrifugal force, and the organic material is applied onto the wafer W (step S1).
- the organic material L in the second region B (hereinafter referred to as “organic material L B ”). Is recessed compared to the organic material L in the first region A (hereinafter referred to as “organic material L A ”). That is, the height H B1 from the pattern P the surface of the organic material L B is lower than the height H A1 from pattern P the surface of the organic material L A. Then, step D 1 occurs between the organic material L A and an organic material L B.
- the wafer W is transferred to the wafer processing apparatus 40 by the wafer transfer apparatus 20.
- the inside of the wafer processing apparatus 40 is maintained in an atmospheric pressure atmosphere of an oxidizing gas.
- the wafer W carried into the wafer processing apparatus 40 is first transferred to the first heat treatment unit 140 and transferred to the lift pins 160 that have been lifted and waited in advance. Subsequently, the lift pins 160 are lowered, and the wafer W is placed on the hot plate 150.
- the wafer W on the hot plate 150 is heated to a predetermined temperature, for example, 300 ° C.
- the organic material L on the wafer W is heated, and an organic film F is formed on the wafer W as shown in FIG.
- step S2 The organic film F in the first region A (hereinafter may be referred to as “organic film F A ”) and the organic film F in the second region B (hereinafter referred to as “organic film F B ”). ) between the stepped D 1 is generated as described above.
- the wafer W is transferred to the second heat treatment unit 141 and is transferred to the lift pins 180 that have been lifted and waited in advance. Subsequently, the lift pins 180 are lowered and the wafer W is placed on the hot plate 170.
- the wafer W on the hot plate 170 is heated to a predetermined temperature, for example, 300 ° C.
- the ultraviolet irradiation unit 142 irradiates ultraviolet rays having a wavelength of 172 nm.
- the irradiated ultraviolet rays generate active oxygen and ozone in the processing atmosphere of the oxidizing gas in the processing container 130.
- the surface of the organic film F is decomposed and removed by these active oxygen and ozone (step S3). That is, the organic film F is etched back.
- the surface of the organic film F can be efficiently removed in a short time by heating the organic film F.
- the surface of the organic film F at room temperature (23 ° C.) is removed by 100 nm, it is necessary to perform the ultraviolet irradiation treatment for 10 minutes, while the organic film F is heated at 300 ° C. as in the present embodiment.
- the ultraviolet irradiation process only needs to be performed for 30 seconds.
- the wavelength of the ultraviolet light irradiated from the ultraviolet irradiation unit 142 is not particularly limited, but is preferably 172 nm as in the present embodiment.
- the shorter the wavelength of the ultraviolet light the greater the power when performing the ultraviolet irradiation treatment, and the surface of the organic film F can be efficiently removed.
- the ultraviolet light having the short wavelength is absorbed by the substance present in the processing container 130. It becomes easy. Therefore, considering the balance between the efficiency of removing the surface of the organic film F and the difficulty of being absorbed by the substance, the wavelength of the ultraviolet light is preferably 172 nm.
- the wafer W is transferred to the temperature adjusting device 44 by the wafer transfer device 20 and the temperature is adjusted to a predetermined temperature.
- the coating process of the organic material L on the wafer W in the process S1, the heating process of the organic material L on the wafer W in the process S2, and the surface removal process of the organic film F on the wafer W in the process S3 are sequentially performed. As a result, the organic film F is formed on the wafer W.
- These steps S1 to S3 are performed a plurality of times, for example, n times.
- temperature control of the wafer W in the temperature control apparatuses 43, 44, 53, and 54 is performed after each process S3, description is abbreviate
- the organic material L is applied onto the wafer W in the coating processing apparatus 31.
- the organic material L is applied with a smaller film thickness than in the first step S1.
- the rotation speed of the spin chuck 110 is increased or the supply amount of the organic material L supplied onto the wafer W is decreased, and the film thickness of the second organic material L is reduced to the first organic film. It is made thinner than the film thickness of the material L.
- the heights H A2 and H B2 of the second organic films F A and F B are the first organic films F A , It is smaller than the height H A1, H B1 of F B.
- step S2 the organic material L on the wafer W is heated in the first heat treatment unit 140 of the wafer processing apparatus 41, and the organic film F is formed on the wafer W as shown in FIG. It is formed.
- step D 2 is generated between the organic film F A and the organic film F B.
- minute with a reduced thickness of the organic material L in a second step S1 is smaller than the step D 2 is the first described above step D 1.
- the second heat treatment unit 141 of the wafer processing apparatus 41 irradiates the ultraviolet ray from the ultraviolet irradiation unit 142 while heating the organic film F on the wafer W, thereby FIG.
- the surface of the organic film F is removed as shown in FIG.
- the surface of the organic film F is removed until the organic film F A is completely removed, that is, the surface of the organic film F having a height H A2 is removed.
- the height H C2 of the organic film F B remaining after the second process S3 is larger than that of the organic film F height H C1 of B remaining after the first step S3. That is, each successive number of steps S1 ⁇ S3, gradually accumulate organic film F B to the recess Q of the pattern P.
- the third to nth steps S1 to S3 are performed. Then, the steps D 3 to D n between the organic film F A and the organic film F B become small, and finally the step D n becomes almost zero. Then, heights of the pattern P on the surface of the surface of the organic film F B as shown in FIG. 9 (f) are the same. Note that the step D n is not completely zero as long as it is within a predetermined range.
- an organic material L having a predetermined film thickness is applied on the wafer W in the coating processing apparatus 32, and the organic material L on the wafer W is heated in the first heat treatment unit 140 of the wafer processing apparatus 42.
- an organic film F having a predetermined film thickness and a flat surface is formed on the wafer W.
- the processes S1 and S2 are finally performed, and the organic material L is applied and heated to finish.
- the surface of the organic film F is removed by performing the process S3. May be terminated. Which process is to be completed may be determined according to the required product specifications.
- the surface of the organic film F may be removed so that the film thickness of the organic film F becomes a predetermined film thickness, for example, as shown in FIG. The surface of the organic film F may be removed to the state.
- the wafer W is transferred to the delivery device 21 by the wafer transfer device 20 and returned to the cassette C by the wafer transfer body 12.
- a series of film forming processes in the film forming system 1 is completed.
- step S3 active oxygen and ozone are generated in the processing atmosphere by irradiating ultraviolet rays from the ultraviolet irradiation unit 142, and the organic film F on the wafer W is generated by these active oxygen and ozone.
- the surface can be removed.
- the level difference D n between the organic film F A and the organic film F B becomes almost zero, and the surface of the organic film F on the wafer W can be flattened. .
- organic films F having various film thicknesses for example, several tens of ⁇ m to several tens of nm
- Step S3 when the ultraviolet ray is irradiated from the ultraviolet ray irradiation unit 142, the organic film F is heated by the hot plate 170, so that the surface of the organic film F can be efficiently removed in a short time.
- step S3 the surface of the organic film F is removed by irradiating the ultraviolet ray from the ultraviolet irradiation unit 142 while heating the organic film F by the hot plate 170, so that the conventional dry etching method is performed.
- the wafer W or the interlayer insulating film such as the pattern P or the Low-K film on the wafer W is not damaged, and there is no possibility that the pattern P or the interlayer insulating film is modified. Therefore, the organic film F can be appropriately formed on the wafer W.
- the accuracy of the surface removal was on the order of several nm.
- the accuracy of surface removal can be reduced to the 0.1 nm level when the ultraviolet irradiation process is performed in step S3 as in the present embodiment. Therefore, according to the present embodiment, the accuracy of the surface removal of the organic film F can be improved.
- the surface removal rate (etching rate) is large in the portion where the pattern P is formed sparsely due to the influence of the microloading effect, In the portion where the pattern P is densely formed, the surface removal speed is reduced. For this reason, the surface of the organic film F cannot be removed uniformly, and the surface of the organic film F cannot be flattened.
- the step S3 as in the present embodiment since the ultraviolet irradiation process is performed in a uniform processing atmosphere, the surface of the organic film F can be uniformly removed. Therefore, the surface of the organic film F can be planarized.
- the coating process of the organic material L in the step S1, the heating process of the organic material L in the step S2, and the removal process of the surface of the organic film F in the step S3 are all performed under a normal pressure atmosphere.
- These steps can be performed in one film forming system 1. Therefore, the manufacturing cost of the film forming system 1 of the present embodiment is reduced compared to the case where the etch back method is performed as in the prior art, and the processing in the normal pressure atmosphere and the processing in the vacuum atmosphere are performed in separate systems. In addition, the throughput of wafer processing can be improved.
- the scum (resist residual) between the patterns P can also be removed. Furthermore, rework of the pattern P (resist pattern) is also possible.
- the removal rate of the surface of the organic film F is controlled by the heating temperature by the hot plate 170 in the second heat treatment unit 141. For example, when the heating temperature is increased, the removal rate of the surface of the organic film F is increased.
- the removal rate of the surface of the organic film F is also controlled by the oxygen concentration in the processing atmosphere, the illuminance of ultraviolet rays, and the irradiation time of ultraviolet rays. For example, when the oxygen concentration in the processing atmosphere is increased, active oxygen and ozone generated in the processing atmosphere increase, and the removal rate of the surface of the organic film F increases. Further, when the illuminance of ultraviolet rays is increased, the removal speed of the surface of the organic film F is increased. Furthermore, when the irradiation time of ultraviolet rays is lengthened, the removal speed of the surface of the organic film F increases.
- step S1 ⁇ S3 was performed a plurality of times, if within a predetermined range first step D 1 is required, perform these steps S1 ⁇ S3 once It's okay.
- the first heat treatment unit 140 and the second heat treatment unit 141 are separately provided in the wafer processing apparatus 40.
- the second heat treatment part 141 may be omitted and the first heat treatment part 140 may also be used.
- the organic material L on the wafer W is heated by the hot plate 170 in step S2.
- step S ⁇ b> 3 the surface of the organic film F is removed by irradiating ultraviolet rays from the ultraviolet irradiation unit 142 while heating the organic film F by the hot plate 170.
- the manufacturing cost of the wafer processing apparatus 40 can be reduced, and the exclusive area of the wafer processing apparatus 40 can be reduced.
- the heating temperature in step S2 is the same as the heating temperature in step S3
- the temperature of the hot plate 170 can be maintained constant, and this embodiment is useful in such a case.
- the first heat treatment unit 140 and the second heat treatment unit 141 are provided in one wafer processing apparatus 40, but may be provided in individual apparatuses.
- heat treatment apparatuses 300 and 301 including a first heat treatment unit 140, and wafer processing apparatuses 302 and 303 including a second heat treatment unit 141 and an ultraviolet irradiation unit 142 are provided.
- 304 may be arranged.
- the heat treatment apparatuses 310 and 311 having the first heat treatment section 140 and the wafer processing apparatuses 312 313 and 314 having the second heat treatment section 141 and the ultraviolet irradiation section 142 are arranged. May be.
- a temperature adjusting device for adjusting the temperature of the wafer W is omitted.
- the removal rate of the surface of the organic film F in step S3 is controlled by, for example, the heating temperature by the hot plate 170 in the second heat treatment unit 141.
- the step S3 is performed a plurality of times, as the number of times is increased, the thickness of the organic film F becomes smaller and the step D between the organic film F A and the organic film F B becomes smaller.
- the removal speed of the surface of the organic film F in each step S3 may be reduced.
- the heating temperature of the hot plate 170 in each of the wafer processing apparatuses 302 to 304 and 312 to 314 is set to a different temperature. Can do. Then, this Embodiment is applicable also when the removal rate of the surface of the organic film F in each process S3 differs as mentioned above. That is, it is not necessary to raise or lower the heating temperature of each hot plate 170, and the heating temperature of each hot plate 170 can be kept constant, so that the throughput of wafer processing can be further improved.
- the heat treatment of the organic film F in the step S3 is performed by the hot plate 170, but the heat treatment method of the organic film F is not limited to this.
- a heat insulating material 320 may be used instead of the hot plate 170 as shown in FIG.
- the second heat treatment unit 141 of the wafer processing apparatus 40 is provided with a mounting table 321 on which the heat insulating material 320 is mounted instead of the hot plate 170, the holding member 171, the support ring 172, and the heating mechanism 173 of the above embodiment. It has been.
- the mounting table 321 the lifting pins 180 and the lifting drive unit 181 are provided, and a through hole 182 is formed in the upper surface of the mounting table 321.
- the heat insulating material 320 can hold and hold the wafer W.
- a material having a large heat capacity for example, quartz glass is used.
- the heat insulating material 320 is configured to be movable on the hot plate 150 of the first heat treatment unit 140 and the mounting table 321 of the second heat treatment unit 141 by a moving mechanism (not shown). Since the other configuration of the wafer processing apparatus 40 is the same as the configuration of the wafer processing apparatus 40 of the above-described embodiment, the description thereof is omitted.
- step S2 when the wafer W is heated to a predetermined temperature, for example, 300 ° C., by the hot plate 150 of the first heat treatment unit 140, the heat insulating material 320 is also heated to the same temperature. Thereafter, the wafer W is transferred to the mounting table 321 while being held by the heat insulating material 320. Then, when performing the ultraviolet treatment by the ultraviolet irradiation unit 142 in step S3, the temperature of the wafer W is maintained by the heat insulating material 320. For this reason, ultraviolet rays can be irradiated from the ultraviolet irradiation unit 142 while heating the organic film F on the wafer W in step S3. According to the present embodiment, it is possible to enjoy the same effects as those of the above embodiment. That is, the surface of the organic film F can be efficiently removed.
- a predetermined temperature for example, 300 ° C.
- an LED Light Emitting Diode
- a mounting plate 330 on which the wafer W is mounted is provided inside the processing container 130 of the wafer processing apparatus 40.
- the mounting plate 330 is configured to be movable in the horizontal Y direction by a moving mechanism (not shown).
- a moving mechanism not shown.
- three elevating pins 331 for supporting and elevating the wafer W from below are provided below the mounting plate 330.
- the elevating pin 331 can be moved up and down by the elevating drive unit 332.
- through holes 333 that penetrate the mounting plate 330 in the thickness direction are formed, for example, at three locations.
- the elevating pins 331 are inserted through the through holes 333 and can protrude from the upper surface of the mounting plate 330.
- An ultraviolet irradiation unit 340 and a second heat treatment unit 341 are integrally provided above the mounting plate 330.
- the ultraviolet irradiation unit 340 and the second heat treatment unit 341 are configured to be movable in the horizontal Y direction by a moving mechanism (not shown).
- the ultraviolet irradiation unit 340 irradiates ultraviolet rays having a wavelength of 172 nm, similarly to the ultraviolet irradiation unit 142.
- a plurality of LEDs 350 are arranged in a line in the Y direction.
- the LED 350 is longer than the length of the wafer W in the radial direction. That is, the LED 350 can emit irradiation light over the entire radial direction of the wafer W on the mounting plate 330.
- the film forming system 1 is separately provided with a heat treatment apparatus (not shown) provided with the first heat treatment unit 140.
- step S3 the placement plate 330 on which the wafer W is placed moves to the Y direction negative direction side, and the ultraviolet irradiation unit 340 and the second heat treatment unit 341 move to the Y direction positive direction side. That is, the mounting plate 330 and the ultraviolet irradiation unit 340 move so as to be relatively close to each other.
- the mounting plate 330, the ultraviolet irradiation unit 340, and the second heat treatment unit 341 are moved together, but any one of them may be moved.
- the removal rate of the surface of the organic film F is controlled by the light emission intensity of the LEDs 350, the number of LEDs 350, the wavelength of irradiation light emitted from the LEDs 350, and the like in the second heat treatment unit 341. can do.
- the removal rate of the surface of the organic film F may be reduced each time. Even in such a case, a method such as controlling the light emission intensity of the LED 350, controlling the on / off of the LED 350 to control the number of times of light emission, and controlling the wavelength of the irradiation light emitted from the LED 350 is appropriately used. By selecting or combining them, the removal speed of the surface of the organic film F can be controlled. Further, since the reaction speed of the LED 350 is fast, the heating temperature and the cooling temperature of the organic film F can be easily controlled, and the heating temperature and the cooling temperature of the organic film F can be locally controlled. . Therefore, the surface of the organic film F can be removed more efficiently.
- the LED 350 is used as the light source in the second heat treatment unit 341.
- various light sources such as a laser and a halogen lamp can be used instead of the LED 350.
- the film forming system 1 has a film thickness measuring device as a film thickness measuring unit that measures the film thickness of the organic film F after the predetermined organic film F is formed on the wafer W. It may be.
- the film thickness measuring device is provided, for example, on the transfer device 21 in the film forming system 1.
- the film thickness measuring device 400 has a processing container 410.
- a loading / unloading port (not shown) for the wafer W is formed on the side surface of the processing container 410 on the wafer transfer device 20 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port.
- a mounting table 420 on which the wafer W is mounted and an optical surface shape measuring instrument 421 are provided on the bottom surface in the processing container 410.
- the mounting table 420 can move, for example, in a two-dimensional direction in the horizontal direction.
- the optical surface shape measuring instrument 421 includes, for example, a light irradiation unit 422 that irradiates light from an oblique direction to the wafer W, a light detection unit 423 that detects light irradiated from the light irradiation unit 422 and reflected by the wafer W, A measurement unit 424 that calculates the film thickness of the organic film F on the wafer W based on the light reception information of the light detection unit 423 is provided.
- the film thickness measuring apparatus 400 measures the film thickness of the organic film F using, for example, a scatterometry method.
- the measurement unit 424 the light intensity distribution in the wafer surface detected by the light detection unit 423
- the film thickness of the organic film F can be measured by collating with the virtual light intensity distribution stored in advance and obtaining the film thickness of the organic film F corresponding to the collated virtual light intensity distribution.
- the wafer W is first placed on the mounting table 420. Subsequently, the wafer W is irradiated with light from the light irradiation unit 422, and the reflected light is detected by the light detection unit 423. In the measurement unit 424, the film thickness of the organic film F on the wafer W is measured. The film thickness measurement result of the organic film F is output to the control unit 200.
- the film thickness of the organic film F is a predetermined film thickness, and the organic film F is flattened, that is, the step D in the organic film F is within a predetermined range.
- the wafer processing is performed on the subsequent wafer W under the same processing conditions.
- the processing conditions in the step S3 are corrected. Specifically, for example, the heating temperature of the second heat treatment units 141 and 341 is corrected. Further, the processing conditions such as the illuminance of ultraviolet rays from the ultraviolet irradiation units 142 and 340 and the irradiation time of ultraviolet rays are corrected. Further, the oxygen concentration in the processing atmosphere in step S3 is corrected.
- the organic film F can be more appropriately formed on the wafer W.
- step S3 of the above embodiment the ultraviolet irradiation treatment is performed while heating the organic film F.
- the organic film F can be formed even if only the ultraviolet irradiation treatment is performed. It has been found that the surface can be removed properly.
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Abstract
Description
本願は、2013年2月22日に日本国に出願された特願2013-033216号に基づき、優先権を主張し、その内容をここに援用する。
30~33 塗布処理装置
40~42、50~52 ウェハ処理装置
140 第1の熱処理部
141 第2の熱処理部
142 紫外線照射部
150 熱板
170 熱板
200 制御部
300、301、310、311 熱処理装置
302~304、312~314 ウェハ処理装置
320 保温材
340 紫外線照射部
341 第2の熱処理部
350 LED
400 膜厚測定装置
A 第1の領域
B 第2の領域
D 段差
F 有機膜
FA (第1の領域Aの)有機膜
FB (第2の領域Bの)有機膜
L 有機材料
LA (第1の領域Aの)有機材料
LB (第2の領域Bの)有機材料
P パターン
Q 窪み部
W ウェハ
Claims (18)
- 表面にパターンが形成された基板上に有機膜を形成する成膜方法であって、
基板上に有機材料を塗布する塗布処理工程と、
その後、前記有機材料を熱処理して基板上に有機膜を形成する熱処理工程と、
その後、前記有機膜に対して紫外線照射処理を行い、当該有機膜の表面を所定の深さまで除去する紫外線照射工程と、を有する。 - 請求項1に記載の成膜方法において、
前記塗布処理工程、前記熱処理工程及び前記紫外線照射工程をそれぞれこの順で複数回行い、
少なくとも最後より前に行われる前記紫外線照射工程において、前記パターンの表面が露出するまで、前記有機膜の表面を除去する。 - 請求項1に記載の成膜方法において、
前記紫外線照射工程において、前記有機膜を熱処理しながら、前記紫外線照射処理を行う。 - 請求項3に記載の成膜方法において、
前記紫外線照射工程における前記熱処理は、基板を熱処理板に載置して行われる。 - 請求項4に記載の成膜方法において、
前記熱処理板は複数設けられ、それぞれ異なる温度で前記紫外線照射工程における前記熱処理が行われる。 - 請求項3に記載の成膜方法において、
前記紫外線照射工程における前記熱処理は、光源からの照射光により行われる。 - 請求項1に記載の成膜方法において、
前記紫外線照射工程において、少なくとも処理雰囲気の酸素濃度、紫外線の照度又は紫外線の照射時間を制御する。 - 請求項1に記載の成膜方法において、
前記紫外線照射工程後、前記有機膜の膜厚を測定する膜厚測定工程をさらに有し、
前記膜厚測定工程における測定結果に基づいて、前記紫外線照射工程の処理条件を補正する。 - 表面にパターンが形成された基板上に有機膜を形成する成膜方法を成膜システムによって実行させるように、当該成膜システムを制御する制御部のコンピュータ上で動作するプログラムを格納した読み取り可能なコンピュータ記憶媒体であって、
前記成膜方法は、
基板上に有機材料を塗布する塗布処理工程と、
その後、前記有機材料を熱処理して基板上に有機膜を形成する熱処理工程と、
その後、前記有機膜に対して紫外線照射処理を行い、当該有機膜の表面を所定の深さまで除去する紫外線照射工程と、を有する。 - 表面にパターンが形成された基板上に有機膜を形成する成膜システムであって、
基板上に有機材料を塗布処理する塗布処理部と、
前記有機材料を熱処理して基板上に有機膜を形成する熱処理部と、
前記有機膜に対して紫外線照射処理を行う紫外線照射部と、
前記塗布処理、前記熱処理及び前記紫外線照射処理をこの順で行い、前記紫外線照射処理において前記有機膜の表面を所定の深さまで除去するように、前記塗布処理部、前記熱処理部及び前記紫外線照射部を制御する制御部と、を有する。 - 請求項10に記載の成膜システムにおいて、
前記制御部は、前記塗布処理、前記熱処理及び前記紫外線照射処理をそれぞれこの順で複数回行い、少なくとも最後より前に行われる前記紫外線照射処理において、前記パターンの表面が露出するまで、前記有機膜の表面を除去するように、前記塗布処理部、前記熱処理部及び前記紫外線照射部を制御する。 - 請求項10に記載の成膜システムにおいて、
前記紫外線照射処理を行う際、当該有機膜を熱処理する他の熱処理部をさらに有する。 - 請求項12に記載の成膜システムにおいて、
前記他の熱処理部は、基板を載置して熱処理する熱処理板を有する。 - 請求項13に記載の成膜システムにおいて、
前記熱処理板は複数設けられ、それぞれ異なる温度で熱処理が行われる。 - 請求項12に記載の成膜システムにおいて、
前記他の熱処理部は、前記有機膜に対して照射光を照射する光源を有する。 - 請求項10に記載の成膜システムにおいて、
前記熱処理部と前記紫外線照射部は同一の装置内に設けられ、
当該装置内には、前記熱処理部と前記紫外線照射部との間を移動自在で、且つ基板を保持して保温する保温材が設けられている。 - 請求項10に記載の成膜システムにおいて、
前記制御部は、前記紫外線照射処理において、少なくとも処理雰囲気の酸素濃度、紫外線の照度又は紫外線の照射時間を制御する。 - 請求項10に記載の成膜システムにおいて、
前記紫外線照射処理が行われた前記有機膜の膜厚を測定する膜厚測定部をさらに有し、
前記制御部は、前記膜厚測定部による測定結果に基づいて、前記紫外線照射処理の処理条件を補正する。
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CN105074883B (zh) | 2017-09-08 |
US9741559B2 (en) | 2017-08-22 |
TWI598703B (zh) | 2017-09-11 |
US20150357188A1 (en) | 2015-12-10 |
KR101959108B1 (ko) | 2019-03-15 |
JP2014165252A (ja) | 2014-09-08 |
TWI565533B (zh) | 2017-01-11 |
KR20150124950A (ko) | 2015-11-06 |
JP5934665B2 (ja) | 2016-06-15 |
TW201440900A (zh) | 2014-11-01 |
TW201708982A (zh) | 2017-03-01 |
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