516116 五、發明說明（1) 發明領域.· 本發明係有關於一種半 一種凸起封|晶®之背面=^程技術，特別是有關於 帶殘留於晶ϋ > i 4研磨方法，用以防止表面保護膠 低，進而提昇_变r •罪度（rellablllty )降 凡歼艮率（yield) 0 相關技術說明： 由一連串的沉積及蝕 案化（patterned) 由切割機具切割成複寧 經由封裝製程而完成 ，需再 由於為 不受到 先保留 格，因 晶圓。 到1 c圖 請參照 有積體 (bump 表面上 (// m ) 經過晶圓背面 了確保晶圓在 熱應力及機械 較厚的厚度， 此需再進行晶 說明習知之凸 第la圖，提供 電路（未纟會示 )1 0 2。接下 及這些凸塊 的膠帶1 〇 4， 在典型的積體電路製程中， 刻=磨等製程之後，將積體電路圖 及疋義於一晶圓表面上。接著，在 數個矩形的晶片（chip)。最後，^ 電子零件的製作。 目前在晶圓進行切割形成晶片前 研磨（backside grind)製程，此乃 經過一連串嚴密的積體電路製程期間 應力的作用而損害破裂，通常晶圓會 然而，此厚度不符合後續封裝設計規 圓背面研磨製程以薄化（thinning ) 為了進一步說明，以下配合第la 起封裝晶圓之背面研磨方法。首先， 一晶圓1 0 0，此晶圓1 〇 〇表面依序形成 )以及用以連接外部電路之複數凸塊 來’在形成有這些凸塊102的晶圓100 102的表面上黏附一厚度約為200微米516116 V. Description of the invention (1) Field of the invention. The present invention relates to a half-type raised seal | the back of the crystal ® = process technology, in particular to the belt remaining on the crystal ϋ &i; In order to prevent the surface protection glue from being low, and thus to improve _ change r • crime rate (rellablllty) to reduce the rate of yield (yield) 0 Related technical descriptions: from a series of deposition and etching (patterned) cutting by cutting tools into Fu Ning The packaging process is completed, because the wafer is not required to be reserved. For the figure 1c, please refer to the product (on the bump surface (// m)) through the back of the wafer to ensure that the wafer is thermally stressed and mechanically thicker. This needs to be further explained by the crystal latitude diagram of the conventional crystal. Circuit (not shown) 1 0 2. Connect the tape with the bumps 1 04. In a typical integrated circuit manufacturing process, after the process of engraving = grinding, etc., the integrated circuit diagram and the definition on a wafer On the surface. Then, on several rectangular chips. Finally, the production of electronic parts. Currently, the wafer is diced to form a backside grind process, which is a series of rigorous integrated circuit manufacturing processes. The damage is caused by the stress. Usually, the wafer will be damaged. However, this thickness does not meet the subsequent package design rules. The back grinding process is thinning. To further explain, the following method is used to polish the back of the packaging wafer from la to la. First, A wafer 100, the surface of the wafer 100 is sequentially formed) and a plurality of bumps for connecting external circuits to 'adhere a thickness of about 100 mm on the surface of the wafer 100 102 where the bumps 102 are formed 200 microns
516116 五、發明說明（2) 例如一紫外線膠帶（UV tape )，使得晶圓1 〇〇緊緊地黏附 在此膠帶104上。此膠帶1〇4係由一黏著層1〇3及一底材1(n 所構成’其中黏著層1 〇 3在受到紫外光照射後會硬化失去 黏性以便於剝離去除。 接下來，請參照第1 b圖，藉由一研磨機（未繪示）在 晶圓100的底面，亦即沒有形成凸塊1〇2之表面，進行背面 研磨以薄化晶圓2 0 0厚度而利於後續封裝之進行。 最後’請參照第lc圖，利用一膠帶剝除機（未繪示） ==04去除以進行後續製程。然而，由於凸塊1〇2與 黏者層103深入接觸，因此在剝離膠帶1〇4時會殘留壽 t〇3a在這些凸塊102之間的晶圓1〇〇表面上，如圖^示。」 = 藉Ϊ水來分解去除，所以嚴重影響後 、，’只封裝製私之可罪度而使良率降低。 有鑑於此，本發明提供一種凸起封 方法，其先藉由在具有凸塊之晶圓矣曰0之貪面研磨 有機材料層，以避免膠帶直接與晶圓：膠帶之間形成- 著再藉由熱處理揮發去除此有機材 及凸塊接觸，接 且不殘留餘膠，以增加後續封f 1二而使膠帶剝離脫落 、罪度而提昇良率。 發明概述： ·| 本發明之目的在於提供一種凸 ' 方法，藉由在具有凸塊之晶圓表面鱼曰曰®之背面研磨 材料層，以防止膠帶殘留而诰出4/壯膠W之間形成一有機 根據上述之目的：：；=裝可靠度降低。 凸起封袈晶圓之背 $ 6頁 0503-7098TWF ； TSMC2001-1062 ； spin.ptd 516116 、發明說明（3) 面研磨方法，包括下列步驟：提 -表面及其背側之第-工面，Ϊ!:曰囫，此晶圓具有第 塊；在第一#61 一 /、中第一表面形成有複數凸 在有機材料層上黏w4政燋，m 有機材科層’ 面；在Π 固定晶圓並保護第-表 熱處進行研磨’以薄化晶圓厚度…實施- 面。复中2除有機材料層而使膠帶完全剝離第-表 唾之;壬：種η ί笨并叠氮化合物及取代的苯并咪 圍。 … 之，皿度在150 °C到240 °C的範 圖式之簡單說明： ^ 下々ί Ϊ本發2之上述目的、特徵和優點能更明顯易懂， 、牛較佳實施例，並配合所附圖式，作詳細說明如 下· 第la me圖係繪示出習知凸起封裝晶圓之背面研磨方 法剖面示意圖。 w第2a到2e圖係繪示出根據本發明實施例之凸起封裝晶 圓之背面研磨方法剖面示意圖。 101、2(Π〜底材； 103、 203〜黏著層； 104、 204〜膠帶； [符號說明] 1 0 0、2 0 0〜晶圓； 102、202〜凸塊； 103a〜餘膠； 205〜有機材料層。516116 V. Description of the invention (2) For example, an ultraviolet tape (UV tape), so that the wafer 1000 is tightly adhered to the tape 104. This adhesive tape 104 is composed of an adhesive layer 103 and a substrate 1 (n), where the adhesive layer 10 is hardened and loses its adhesiveness after being exposed to ultraviolet light, so that it can be peeled off. Next, please refer to In Figure 1b, a grinding machine (not shown) is used on the bottom surface of the wafer 100, that is, the surface on which the bumps 102 are not formed, and the back surface is polished to thin the wafer 200 to facilitate subsequent packaging. Finally, please refer to Figure lc and use a tape stripper (not shown) == 04 for subsequent processes. However, since the bump 102 is in deep contact with the adhesive layer 103, it is peeling off. At the time of the adhesive tape 104, the remaining life t03a is on the surface of the wafer 100 between the bumps 102, as shown in Figure ^. "= Water is used to decompose and remove, so after severely affecting," Only package In view of this, the present invention provides a bump sealing method, which firstly grinds an organic material layer on a greed surface of a wafer having bumps to avoid tape. Formed directly with wafer: adhesive tape-this organic material and bump connection are removed by heat treatment and volatilization Touch, then without residual adhesive, in order to increase the subsequent sealing f 12 and peel off the tape, increase the yield. Summary of the invention: The purpose of the present invention is to provide a convex method, Abrasive material layer on the back surface of the wafer on the surface of the wafer to prevent the adhesive tape from remaining and forming an organic layer between the 4 / rubber W. According to the above purpose :: == Reliability is reduced. The back of the circle $ 6 pages 0503-7098TWF; TSMC2001-1062; spin.ptd 516116, invention description (3) Surface grinding method, including the following steps: Raise the surface and its back side of the first working surface, Ϊ !: 囫, This wafer has a first block; on the first surface of the first # 61, a plurality of convex protrusions are formed on the organic material layer to adhere to the organic material layer, and the surface of the organic material layer is fixed on the first surface; The surface heat is ground to reduce the thickness of the wafer ... Implementing the surface. Fuzhong 2 removes the organic material layer and completely peels off the tape.-Episode; Ren: Species n Benzene azide compound and substituted benzo Mi Wai.… In short, a simple illustration of a model diagram with a temperature of 150 ° C to 240 ° C: ^ 々Ί 上述 The above-mentioned purpose, characteristics and advantages of the present invention can be more clearly understood, and the preferred embodiment of the present invention is described in detail below with reference to the attached drawings. The first la me diagram shows the conventional protrusions. Cross-sectional schematic diagram of the back grinding method of a package wafer. Figures 2a to 2e are schematic cross-sectional diagrams of the back grinding method of a raised package wafer according to an embodiment of the present invention. 101, 2 (Π ~ substrate; 103, 203 ~ Adhesive layer; 104, 204 ~ Adhesive tape; [Symbol description] 100, 2000 ~ wafer; 102, 202 ~ bump; 103a ~ remaining glue; 205 ~ organic material layer.
516116516116
五、發明說明（4) 較佳實施例之詳細說明： 以下配合第2a到2e圖說明本發明實施例之凸起封裝晶 圓之背面研磨方法。 、阳 首先，請參照第2a圖，提供一晶圓20 0，此晶圓2〇〇表 面依序形成有積體電路（未繪示）以及用以連接外部電路 之複數凸塊（bump ) 202，其材質一般為錫鉛合金。 接下來’請參照第2 b圖，藉由一般的旋轉塗佈法 (spin coating)在形成有這些凸塊2〇2的晶圓200表面上 及這些凸塊202的表面上形成一有機材料層205以作為一隔囑_ 離保遵層’例如苯并疊氮化合物（benzotriazoiu)及取 代的苯并咪唑（substituted benzotriazoles)之任一 種0 接下來明參照第2 c圖，將形成有凸塊2 〇 2的晶圓2 〇 〇 表面朝下並施壓於一厚度約為2〇〇微米（/Wm)的膠帶2〇4 上，例如一紫外線膠帶（UV tape)，使得有機材料層2〇5 上緊緊地黏附在此膠帶204上。此膠帶2〇4係由一黏著層 203及一底材201所構成，其中黏著層2〇3在受 曰昭 射後會硬化失去黏性以便於剝離去除，而基材2〇1 一般*由' 聚氣乙烯（polyvinyl chloride， pvc )所 | 膠帶m之目的在於後續的研磨過程中提供固=晶=◦此 平面並保護晶圓2 〇 0表面受到研磨碎削的沾染 、 接下來，請參照第2d圖，藉由一研磨機木(未 晶圓200的底面，亦即沒有形成凸塊2〇2之表面，^行背面V. Description of the invention (4) Detailed description of the preferred embodiment: The method of grinding the backside of the bump package wafer according to the embodiment of the present invention will be described below with reference to Figures 2a to 2e. First, please refer to FIG. 2a to provide a wafer 200. The wafer 2000 has an integrated circuit (not shown) and a plurality of bumps 202 for connecting external circuits in this order. , Its material is generally tin-lead alloy. Next, please refer to FIG. 2b. An organic material layer is formed on the surface of the wafer 200 on which the bumps 202 are formed and on the surface of the bumps 202 by a general spin coating method. 205 is used as a barrier _ from the compliance layer 'for example, any of benzotriazoiu and substituted benzotriazoles. 0 Next, referring to Figure 2c, a bump 2 will be formed. The wafer 002 with the surface facing downward is pressed on a tape 200 having a thickness of about 200 microns (/ Wm), such as a UV tape, so that the organic material layer 205 The upper part is tightly adhered to the adhesive tape 204. This adhesive tape 204 is composed of an adhesive layer 203 and a substrate 201, wherein the adhesive layer 203 will harden and lose its adhesiveness after being exposed to light, so that the substrate 201 is generally 'Polyvinyl chloride (PVC) | The purpose of the tape m is to provide solid = crystal = in the subsequent grinding process and to protect the surface of the wafer 2000 from grinding and chipping. Next, please refer to Fig. 2d. With a grinding machine (the bottom surface of the wafer 200, that is, the surface on which the bumps 200 are not formed, the rear surface is lined up).
516116 五、發明說明（5) 研磨（backside grind)，以薄化（thinning)晶圓 2〇() 厚度而增加積體電路之封裝可靠度。 最後’清參照第2 e圖’在薄化晶圓2 〇 〇厚度之後，需 去除膠帶204以便於後續將晶圓2〇〇之凸塊2〇2對位安裝於 基板之封裝步驟。因此在本實施例中，可先將膠帶2〇4暴 露於紫外光下而使黏著層203硬化失去黏性。才妾著，實施 一熱處理以揮發去除有機材料層2〇5，其埶 度在150 °C到24 0 °C的範圍。如肤 ^ /、 ”、、 狐 表面及凸塊202之間t失去接:而：來入、膠帶2〇4與曰曰曰圓200 女1 Π曰矢去接觸而完全剝離脫落。然而， 亦可在薄化晶圓2 0 〇厚度之德，亩姑替 : 後直接實施上述熱處理來剝β 除膝帶204。由於根據本發明之 」"y 方法係利用有機材料層205作A=裝日曰固之月面研磨 接與晶圓200表面及凸層，膠帶204並不會直 今W久表面接觸， 法導致在晶圓表面留下餘膠的 ς 口方 良率。 U ^ 進而增加後續封裝之 雖然本發明已以較佳實施例揭露鈥 限定本發明，任何熟習此項技蓺 上一，、並非用以 神和範圍Μ，當可作更動=㈤在不脫離本發明之精 當視後附之申請專利範圍;斤界定者^本發明之保護範圍516116 V. Description of the invention (5) Grinding (backside grind) to thin the wafer by 20 () thickness to increase the package reliability of the integrated circuit. Finally, referring to FIG. 2e, after the wafer 200 is thinned, the tape 204 needs to be removed to facilitate subsequent packaging steps of mounting the bump 200 of the wafer 200 on the substrate. Therefore, in this embodiment, the adhesive tape 203 may be first exposed to ultraviolet light to harden the adhesive layer 203 and lose its adhesiveness. Then, a heat treatment was performed to volatilize and remove the organic material layer 205, and the temperature was in the range of 150 ° C to 240 ° C. Such as the skin ^ /, ", t between the fox surface and the bump 202: and: come in, the tape 204 comes in contact with the Yueyuan 200 female 1 ΠYiya completely peeled off. However, also After thinning the wafer to a thickness of 200 Å, the following heat treatment can be directly performed to remove the β knee strip 204. Since the "" y method according to the present invention uses an organic material layer 205 for The solid surface of the moon is bonded to the surface of the wafer 200 and the convex layer, and the adhesive tape 204 will not be in direct contact with the surface for a long time. This method will leave a residual yield on the wafer surface. U ^ Further increase the subsequent packaging. Although the present invention has been disclosed in a preferred embodiment to define the present invention, anyone familiar with this technique can use the previous one, but it is not used for God and the scope M. When it can be changed = does not depart from this The scope of patent application attached to the essence of the invention;