WO2014080471A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2014080471A1
WO2014080471A1 PCT/JP2012/080159 JP2012080159W WO2014080471A1 WO 2014080471 A1 WO2014080471 A1 WO 2014080471A1 JP 2012080159 W JP2012080159 W JP 2012080159W WO 2014080471 A1 WO2014080471 A1 WO 2014080471A1
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Prior art keywords
layer
semiconductor
conductivity type
semiconductor layer
drift
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PCT/JP2012/080159
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English (en)
French (fr)
Inventor
明高 添野
敏雅 山本
Original Assignee
トヨタ自動車株式会社
株式会社デンソー
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Application filed by トヨタ自動車株式会社, 株式会社デンソー filed Critical トヨタ自動車株式会社
Priority to BR112013019344A priority Critical patent/BR112013019344B8/pt
Priority to PCT/JP2012/080159 priority patent/WO2014080471A1/ja
Priority to CN201280006360.1A priority patent/CN103959475B/zh
Priority to KR1020137020219A priority patent/KR101439310B1/ko
Priority to US13/982,519 priority patent/US9029871B2/en
Priority to JP2013525045A priority patent/JP5547347B1/ja
Priority to EP12866405.9A priority patent/EP2924739B1/en
Publication of WO2014080471A1 publication Critical patent/WO2014080471A1/ja

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    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
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Definitions

  • the technology described in this specification relates to a semiconductor device.
  • a high breakdown voltage and a low on-resistance are in a trade-off relationship.
  • MOSFETs having a floating structure at the bottom of the trench have a high breakdown voltage, but have a problem that on-resistance characteristics are degraded.
  • a low-concentration p-layer that connects the p-type body layer and the floating structure at the bottom of the trench is provided so as to be in contact with the end in the longitudinal direction of the trench.
  • the low-concentration p-layer has a high resistance when the gate voltage is turned off to maintain the floating structure and ensure a high breakdown voltage.
  • the gate voltage when the gate voltage is turned on, it becomes a carrier supply path from the body layer to the floating structure. Improve properties.
  • the gate insulating film is formed when the low-concentration p-layer is in contact with the longitudinal end portion of the trench.
  • the low-concentration p-layer may be lost and lost, and it is necessary to secure a large process margin.
  • a low-concentration p-layer is confirmed by an electron microscope or SIMS in the inspection process, if the low-concentration p-layer is in contact with the longitudinal end of the trench, the low-concentration p-layer It is difficult to confirm the p layer.
  • the present specification provides a first conductivity type drift layer, a second conductivity type body layer that is in contact with the surface of the drift layer and a part of which is exposed on the surface of the semiconductor substrate, and a part of the surface of the body layer.
  • a first conductivity type source layer exposed on the surface of the semiconductor substrate and separated from the drift layer by the body layer; and a first conductivity type drain layer in contact with the back surface of the drift layer and exposed on the back surface of the semiconductor substrate A trench gate that penetrates the body layer and reaches the drift layer; a first semiconductor layer of a second conductivity type that surrounds the bottom of the trench gate and is separated from the body layer by the drift layer;
  • a semiconductor device comprising: a connection layer having a second end connected to a first semiconductor layer, in contact with a second semiconductor layer, and separated from the first semiconductor substrate.
  • connection layers connected to the body layer and the first semiconductor layer at both ends thereof are separated from the longitudinal ends of the trench gate by the second semiconductor layer. For this reason, it is suppressed that a connection layer is impaired in the manufacturing process of a semiconductor device. In addition, the size of the connection layer can be confirmed by inspection without being affected by the edge effect of the trench.
  • a connection layer which is a carrier supply path from the body layer to the floating structure can be stably formed, and a semiconductor device with favorable on-resistance characteristics and high yield can be provided.
  • connection layer may be a second conductivity type semiconductor layer.
  • the impurity concentration of the second conductivity type of the second semiconductor layer may be higher than the impurity concentration of the second conductivity type of the drift layer.
  • FIG. 1 is a longitudinal sectional view of a semiconductor device according to Example 1.
  • FIG. FIG. 2 is a sectional view taken along line II-II in FIG.
  • FIG. 3 is a sectional view taken along line III-III in FIG. 1.
  • FIG. 6 is a diagram illustrating a manufacturing process of the semiconductor device according to Example 1;
  • FIG. 6 is a diagram illustrating a manufacturing process of the semiconductor device according to Example 1;
  • FIG. 6 is a diagram illustrating a manufacturing process of the semiconductor device according to Example 1;
  • It is a longitudinal cross-sectional view of the semiconductor device which concerns on a modification.
  • FIG. 4 is a cross-sectional view of a semiconductor device according to a modification as viewed in the same cross section as FIG.
  • connection layer may be a layer having a function as a carrier supply path from the body layer to the floating structure, and may be a second conductivity type semiconductor layer. It may be a layer. Specifically, a metal layer such as tungsten, a conductive polysilicon layer, and the like can be exemplified in addition to the second conductivity type semiconductor layer.
  • the impurity concentration of the second conductivity type may be lower or higher than the impurity concentration of the second conductivity type of the first semiconductor layer. May be.
  • the impurity concentration of the second conductivity type of the connection layer is low, the carrier mobility is low when the gate electrode is on, while the connection layer is depleted quickly when the gate electrode is off, and the first semiconductor layer is floating. It is easy to become a state.
  • the impurity concentration of the second conductivity type of the connection layer is high, the carrier mobility when the gate electrode is on increases, but depletion of the connection layer when the gate electrode is off is slightly delayed.
  • connection layer is in contact with the second semiconductor layer of the first conductivity type, and the depletion of the connection layer proceeds from the interface with the second semiconductor layer.
  • the first semiconductor layer is more likely to be in a floating state than the semiconductor device.
  • the second semiconductor layer may be a layer different from the drift layer, or may be a layer formed integrally with the drift layer.
  • the impurity concentration of the first conductivity type in the second semiconductor layer may be higher, lower, or similar to the impurity concentration of the first conductivity type in the drift layer.
  • the impurity concentration of the first conductivity type of the second semiconductor layer is higher than the impurity concentration of the first conductivity type of the drift layer, the depletion of the connection layer, which is the second conductivity type semiconductor layer, when the gate electrode is turned off Is more promoted.
  • a layer having a high impurity concentration of the first conductivity type may be formed in a region in contact with the connection layer on the side opposite to the second semiconductor layer in the drift layer. This further promotes depletion of the connection layer, which is the second conductivity type semiconductor layer, when the gate electrode is off.
  • FIG. 1 shows a semiconductor device 10 according to the first embodiment.
  • the semiconductor device 10 includes a semiconductor substrate 100, a trench gate 120 formed on the surface side of the semiconductor substrate 100 (positive direction side of the z axis), and a peripheral trench 130.
  • the semiconductor substrate 100 is made of silicon carbide.
  • a vertical MOSFET is formed on the semiconductor substrate 100.
  • the semiconductor substrate 100 includes an n-type drain layer 101, an n-type drift layer 103, a p-type body layer 104, an n-type source layer 109, and a p-type first layer.
  • Body layer 104 is in contact with the surface of drift layer 103, and a part thereof is exposed on the surface of semiconductor substrate 100.
  • the source layer 109 is provided on a part of the surface of the body layer 104 and is exposed on the surface of the semiconductor substrate 100, and is separated from the drift layer 103 by the body layer 104.
  • the drain layer 101 is in contact with the back surface of the drift layer 103 and is exposed on the back surface of the semiconductor substrate 100.
  • the source layer 109 and the body layer 104 are electrically connected to a source electrode (not shown), and the drain layer 101 is electrically connected to a drain electrode (not shown).
  • the first semiconductor layer 105 surrounds the bottom of the trench gate 120 and is separated from the body layer 104 by the drift layer 103.
  • the semiconductor layer 106 surrounds the bottom of the peripheral trench 130 and is separated from the body layer 104 by the drift layer 103.
  • the second semiconductor layer 110 is provided along the end of the trench gate 120 in the longitudinal direction (x direction).
  • the end of the second semiconductor layer 110 in the positive z-axis direction is in contact with the body layer 104, while the end of the z-axis in the negative direction is in contact with the first semiconductor layer 105. Further, the second semiconductor layer 110 is in contact with an end portion in the longitudinal direction (x direction) of the trench gate 120.
  • connection layer 107 has an end in the positive direction of the z-axis connected to the body layer 104, while an end in the negative direction of the z-axis is connected to the first semiconductor layer 105.
  • the connection layer 107 is in contact with the drift layer 103 on one side in the x direction and in contact with the second semiconductor layer 110 on the other side, and is separated from the longitudinal end portion of the trench gate 120 by the second semiconductor layer 110.
  • the p-type impurity concentration of the connection layer 107 is lower than the p-type impurity concentration of the first semiconductor layer 105.
  • FIG. 3 shows a cross section parallel to the xy plane including the second semiconductor layer 110 and the connection layer 107.
  • the second semiconductor layer 110 and the connection layer 107 have an island shape.
  • the second semiconductor layer 110 is in contact with the side surface of the trench gate 120 on one side in the x direction, is in contact with the connection layer 107 on the other side, and is in contact with the drift layer 103 in the y direction.
  • Trench gate 120 is covered with trench 121 that penetrates body layer 104 from surface of semiconductor substrate 100 to drift layer 103, gate insulating film 122 formed on the inner wall surface of trench 121, and gate insulating film 122. And a gate electrode 123 filled in the trench 121.
  • the gate electrode 123 is opposed to the body layer 104 in a range in which the source layer 109 and the source layer 109 and the drift layer 103 are separated with a gate insulating film 122 interposed therebetween.
  • connection layer 107 When the gate voltage is turned off, a depletion layer spreads from the pn junction surface between the connection layer 107, the second semiconductor layer 110, and the drift layer 103, the connection layer 107 becomes high resistance, and the first semiconductor layer 105 is in a floating state. Become.
  • the p-type impurity concentration, shape, and size of the connection layer 107 are such that at least a portion of the connection layer 107 in the thickness direction (z direction) of the semiconductor substrate 100 is ahead of the first semiconductor layer 105 when the gate voltage is turned off. It is adjusted to be depleted. Since the first semiconductor layer 105 is in a floating state, the peak of the electric field strength is dispersed, so that the semiconductor device 10 has a high breakdown voltage.
  • the depletion layer When the semiconductor device 10 is switched from OFF to ON while the depletion layer is expanded, the depletion layer is narrowed and the connection layer 107 becomes a carrier supply path from the body layer 104 to the first semiconductor layer 105. By receiving the supply of carriers from the body layer 104, the depletion layer of the first semiconductor layer 105 is quickly narrowed, so that the on-resistance of the semiconductor device 10 is reduced.
  • connection layer 107 is in contact with both the drift layer 103 and the second semiconductor layer 110, and not only the pn junction with the drift layer 103 but also the pn junction with the second semiconductor layer 110. Also, the depletion of the connection layer 107 proceeds. For this reason, the first semiconductor layer 105 quickly enters a floating state when the gate voltage is turned off as compared with the conventional semiconductor device.
  • FIG. 4 to 7 show an example of a method for manufacturing the semiconductor device 10.
  • an n layer 503 (a layer that becomes the drift layer 103), a p layer 504 (a layer that becomes the body layer 104) formed on the surface of the n layer 503, and a p layer
  • a semiconductor wafer 500 made of silicon carbide and having an n layer (a layer that becomes the source layer 109; not shown in FIGS. 4 to 7) formed on a part of the surface of the layer 504 is prepared.
  • a mask 551 is formed on the surface of the semiconductor wafer 500, and trenches 521 and 531 that penetrate the p layer 504 and reach the n layer 503 are formed on the surface side of the semiconductor wafer 500 by etching.
  • p-type impurity ions are implanted into the bottoms of the trenches 521 and 531 along the depth direction (z direction) of the semiconductor wafer 500 to form a first semiconductor layer 505 (a layer to be the first semiconductor layer 105).
  • a semiconductor layer 506 (a layer to be the semiconductor layer 106) is formed.
  • p-type impurity ions are implanted into the n layer 503 at a position slightly away from the inner wall surface of the trench 521 in the oblique direction from the surface side of the semiconductor wafer 500.
  • the angle at which the impurity ions are implanted is a direction that forms an angle ⁇ with respect to the z direction.
  • the angle ⁇ is appropriately adjusted according to the depth (width in the z direction) and the width in the longitudinal direction (x direction) of the trench 521.
  • the angle ⁇ is adjusted so as to prevent the impurity ions from hitting the surface of the semiconductor wafer 500 (the surface where the trench is not formed) from reaching the inner wall surface of the trench 521 in the x direction.
  • ion implantation is performed in an oblique direction, and as shown in FIG. 6, the p layer 507 (connection layer 107) at the position where impurity ions are implanted.
  • the n layer 510 (the layer to be the second semiconductor layer 110) is formed between the trench 521 and the p layer 507.
  • activation annealing is performed at about 1700.degree.
  • the unnecessary silicon oxide film is removed by etching back leaving the vicinity of the bottom.
  • post oxidation annealing is performed at about 1300 ° C.
  • the trenches 521 and 531 are filled with polysilicon.
  • the trench 521 is filled with the gate electrode 523 made of polysilicon while being covered with the gate insulating film 522 made of silicon oxide, and the trench gate 520 (trench Forming a gate 120).
  • the trench 531 is filled with the conductive layer 533 made of polysilicon while being covered with the insulating film 532 made of silicon oxide, thereby forming the peripheral trench 530 (to be the peripheral trench 130).
  • the conductive layer 533 made of polysilicon
  • the insulating film 532 made of silicon oxide
  • Excess silicon oxide film and polysilicon formed on the surface of the semiconductor wafer 500 and the like are removed by etch back.
  • n-type impurity ions are implanted into the back surface of the semiconductor wafer 500 and annealed by a laser annealing method to form an n layer serving as a drain layer, whereby the semiconductor device 10 shown in FIG. 1 can be manufactured. .
  • the semiconductor wafer 500 after ion implantation is annealed at 1700 ° C. in order to form the connection layer 107 and the like.
  • the process of manufacturing the trench gate 120 and the like is a process subsequent to the process of forming the connection layer 107. It is necessary to. For this reason, in the process of forming the trench gate 120 and the like, the semiconductor wafer 500 may be lost from the inner wall surface of the trench 120.
  • connection layer 107 is separated from the end portion in the longitudinal direction (x direction) of the trench gate 120 by the second semiconductor layer 110 and is not in contact with the trench gate 120. Even if the semiconductor wafer 500 is diminished, the connection layer 107 is not diminished. Further, in the inspection process of the manufactured semiconductor device 10, the size and the like of the connection layer 107 can be confirmed by inspection without being affected by the edge effect of the trench 121.
  • the semiconductor device 10 has good on-resistance characteristics and is excellent in yield.
  • n-type impurity ions may be implanted at a position closer to the inner wall surface in the x direction of the trench 521. Further, as illustrated in FIG. 8, an n-type semiconductor layer 112 may be further provided at a position facing the second semiconductor layer 110 in the x direction with respect to the connection layer 107. For example, before the step of irradiating the semiconductor wafer 500 with p-type impurity ions shown in FIG. 5, the n-type semiconductor layer 112 is similarly inclined in the x direction of the trench 521 from the surface side of the semiconductor wafer 500.
  • the first semiconductor layer 210 may be surrounded by the connection layer 207 and isolated from the drift layer 103.
  • the p-type impurity concentration of the connection layer 107 may be the same as or higher than that of the first semiconductor layer 105.
  • the connection layer 107 is in contact with the drift layer 103 and the second semiconductor layer 110, and depletion of the connection layer 107 proceeds from the pn junction surface with both. For this reason, even when the p-type impurity concentration of the connection layer 107 is relatively high, the first semiconductor layer 105 tends to be in a floating state.
  • a conductive layer such as a polysilicon layer or a metal layer such as tungsten may be used as the connection layer.
  • the connection layer may be embedded in the drift layer.
  • the second semiconductor layer may be a part of the drift layer.

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Abstract

　半導体装置は、第１導電型のドリフト層と、第２導電型のボディ層と、第１導電型のソース層と、第１導電型のドレイン層と、ボディ層を貫通してドリフト層に達するトレンチゲートと、トレンチゲートの底部を包囲しており、ドリフト層によってボディ層より分離されている第２導電型の第１半導体層と、トレンチゲートの長手方向の端部に沿って、その一端部がボディ層に接する一方で他端部が第１半導体層に接する第１導電型の第２半導体層と、その一端部がボディ層に接続する一方で他端部が第１半導体層に接続し、かつ、第２半導体層に接し、第２半導体層によってトレンチゲートの長手方向の端部と離隔されている接続層と、を備えている。

Description

半導体装置
　本明細書に記載の技術は、半導体装置に関する。
　パワーデバイス用の絶縁ゲート型半導体装置では、一般的に、高耐圧化と低オン抵抗化がトレードオフの関係となる。トレンチ底部にフローティング構造を設けたＭＯＳＦＥＴは、高耐圧である一方で、オン抵抗特性が低下するという問題がある。これに対し、特許文献１では、ｐ型のボディ層とトレンチ底部のフローティング構造とを接続する低濃度のｐ層をトレンチの長手方向の端部に沿って接するように設けている。低濃度のｐ層は、ゲート電圧のオフ時には高抵抗となってフローティング構造を維持し、高耐圧を確保する一方、ゲート電圧のオン時には、ボディ層からフローティング構造へのキャリア供給経路となり、オン抵抗特性を改善する。
特開２００７－２４２８５２号公報
　特許文献１のように、トレンチの長手方向の端部に沿って低濃度のｐ層を設ける場合、低濃度のｐ層がトレンチの長手方向の端部に接していると、ゲート絶縁膜の形成等の半導体装置の製造工程において低濃度のｐ層が損なわれて目減りする場合があり、プロセスマージンを大きく確保する必要がある。また、検査工程において低濃度のｐ層を電子顕微鏡やＳＩＭＳによって確認する場合、低濃度のｐ層がトレンチの長手方向の端部に沿って接触していると、トレンチのエッジ効果により、低濃度のｐ層を確認することが困難である。
　本明細書は、第１導電型のドリフト層と、ドリフト層の表面に接するとともにその一部が半導体基板の表面に露出する第２導電型のボディ層と、ボディ層の表面の一部に設けられ、半導体基板の表面に露出し、ボディ層によってドリフト層と分離されている第１導電型のソース層と、ドリフト層の裏面に接するとともに半導体基板の裏面に露出する第１導電型のドレイン層と、ボディ層を貫通してドリフト層に達するトレンチゲートと、トレンチゲートの底部を包囲しており、ドリフト層によってボディ層より分離されている第２導電型の第１半導体層と、トレンチゲートの長手方向の端部に沿って、その一端部がボディ層に接する一方で他端部が第１半導体層に接する第１導電型の第２半導体層と、その一端部がボディ層に接続する一方で他端部が第１半導体層に接続し、第２半導体層に接し、第２半導体層によってトレンチゲートの長手方向の端部と離隔されている接続層と、を備えている半導体装置を提供する。
　上記の半導体装置では、その両端部においてボディ層と第１半導体層にそれぞれ接続する接続層は、第２半導体層によってトレンチゲートの長手方向の端部と離隔されている。このため、半導体装置の製造工程において接続層が損なわれることが抑制される。また、トレンチのエッジ効果の影響を受けることなく、接続層の大きさ等を検査によって確認することができる。ボディ層からフローティング構造へのキャリア供給経路である接続層を安定的に形成でき、オン抵抗特性が良好で歩留りのよい半導体装置を提供できる。
　接続層は、第２導電型の半導体層であってもよい。第２半導体層の第２導電型の不純物濃度は、ドリフト層の第２導電型の不純物濃度よりも高くてもよい。
実施例１に係る半導体装置の縦断面図である。 図１のＩＩ－ＩＩ線断面図である。 図１のＩＩＩ－ＩＩＩ線断面図である。 実施例１に係る半導体装置の製造工程を示す図である。 実施例１に係る半導体装置の製造工程を示す図である。 実施例１に係る半導体装置の製造工程を示す図である。 実施例１に係る半導体装置の製造工程を示す図である。 変形例に係る半導体装置の縦断面図である。 変形例に係る半導体装置を図３と同じ断面で見た断面図である。
　本明細書が開示する半導体装置においては、接続層は、ボディ層からフローティング構造へのキャリア供給経路としての機能を有する層であればよく、第２導電型の半導体層であってもよく、導電層であってもよい。具体的には、第２導電型の半導体層の他、タングステン等の金属層、導電性のポリシリコン層等を例示することができる。
　接続層が第２導電型の半導体層である場合、その第２導電型の不純物濃度は、第１半導体層の第２導電型の不純物濃度よりも低くても高くてもよく、同程度であってもよい。接続層の第２導電型の不純物濃度が低い場合、ゲート電極のオン時におけるキャリアの移動度が小さくなる一方で、ゲート電極のオフ時における接続層の空乏化が速く、第１半導体層がフローティング状態となり易い。接続層の第２導電型の不純物濃度が高い場合、ゲート電極のオン時におけるキャリアの移動度は大きくなる一方で、ゲート電極のオフ時における接続層の空乏化がやや遅くなる。しかしながら、本明細書が開示する半導体装置では、接続層は、第１導電型の第２半導体層に接しており、第２半導体層との界面からも接続層の空乏化が進行するため、従来の半導体装置よりも、第１半導体層がフローティング状態となり易い。
　第２半導体層は、ドリフト層とは異なる層であってもよいし、ドリフト層と一体に形成された層であってもよい。また、第２半導体層の第１導電型の不純物濃度は、ドリフト層の第１導電型の不純物濃度より高くても低くてもよいし、同程度であってもよい。第２半導体層の第１導電型の不純物濃度がドリフト層の第１導電型の不純物濃度よりも高い場合には、ゲート電極のオフ時において、第２導電型の半導体層である接続層の空乏化がより促進される。さらには、ドリフト層内の第２半導体層と逆側で接続層に接する領域に、第１導電型の不純物濃度が高い層を形成してもよい。これによって、ゲート電極のオフ時における第２導電型の半導体層である接続層の空乏化がさらに促進される。
　図１は、実施例１に係る半導体装置１０である。半導体装置１０は、半導体基板１００と、半導体基板１００の表面側（ｚ軸の正方向側）に形成されたトレンチゲート１２０と、周辺トレンチ１３０とを備えている。半導体基板１００は、炭化ケイ素を材料としている。
　半導体基板１００には、縦型のＭＯＳＦＥＴが形成されている。図１，２に示すように、半導体基板１００は、ｎ型のドレイン層１０１と、ｎ型のドリフト層１０３と、ｐ型のボディ層１０４と、ｎ型のソース層１０９と、ｐ型の第１半導体層１０５と、ｐ型の半導体層１０６と、ｐ型の接続層１０７と、ｎ型の第２半導体層１１０とを備えている。ボディ層１０４は、ドリフト層１０３の表面に接しており、その一部が半導体基板１００の表面に露出している。ソース層１０９は、ボディ層１０４の表面の一部に設けられるとともに半導体基板１００の表面に露出し、ボディ層１０４によってドリフト層１０３と分離されている。ドレイン層１０１は、ドリフト層１０３の裏面に接するとともに半導体基板１００の裏面に露出している。ソース層１０９およびボディ層１０４は、図示しないソース電極に電気的に接続され、ドレイン層１０１は、図示しないドレイン電極に電気的に接続される。
　第１半導体層１０５は、トレンチゲート１２０の底部を包囲しており、ドリフト層１０３によってボディ層１０４より分離されている。半導体層１０６は、周辺トレンチ１３０の底部を包囲しており、ドリフト層１０３によってボディ層１０４より分離されている。
　第２半導体層１１０は、トレンチゲート１２０の長手方向（ｘ方向）の端部に沿って設けられている。第２半導体層１１０のｚ軸の正方向の端部はボディ層１０４に接する一方で、ｚ軸の負方向の端部が第１半導体層１０５に接している。また、第２半導体層１１０は、トレンチゲート１２０の長手方向（ｘ方向）の端部に接している。
　接続層１０７は、そのｚ軸の正方向の端部がボディ層１０４に接続する一方で、そのｚ軸の負方向の端部が第１半導体層１０５に接続している。接続層１０７は、ｘ方向の一方側でドリフト層１０３に接するとともに他方側で第２半導体層１１０に接し、第２半導体層１１０によってトレンチゲート１２０の長手方向の端部と離隔されている。接続層１０７のｐ型の不純物濃度は、第１半導体層１０５のｐ型の不純物濃度よりも低い。
　図３は、第２半導体層１１０と接続層１０７を含むｘｙ平面に平行な断面を示す。この断面において、第２半導体層１１０と接続層１０７は島状である。第２半導体層１１０は、ｘ方向における一方側においてトレンチゲート１２０の側面に接し、他方側において接続層１０７に接し、ｙ方向においてドリフト層１０３に接している。
　トレンチゲート１２０は、半導体基板１００の表面からボディ層１０４を貫通してドリフト層１０３に至るトレンチ１２１と、トレンチ１２１の内壁面に形成されたゲート絶縁膜１２２と、ゲート絶縁膜１２２に覆われてトレンチ１２１内に充填されているゲート電極１２３とを備えている。ゲート電極１２３は、ソース層１０９と、ソース層１０９とドリフト層１０３とを分離している範囲のボディ層１０４に、ゲート絶縁膜１２２を介して対向している。
　ゲート電圧のオフ時には、接続層１０７と、第２半導体層１１０およびドリフト層１０３とのｐｎ接合面から空乏層が広がり、接続層１０７は高抵抗となって、第１半導体層１０５がフローティング状態となる。接続層１０７のｐ型の不純物濃度と形状および大きさは、ゲート電圧のオフ時に、接続層１０７の半導体基板１００の厚さ方向（ｚ方向）の少なくとも一部が第１半導体層１０５よりも先に空乏化されるように調整されている。第１半導体層１０５がフローティング状態となることで電界強度のピークが分散されるため、半導体装置１０は高耐圧化する。
　空乏層が広がった状態で、半導体装置１０をオフからオンにスイッチングすると、空乏層が狭められて、接続層１０７は、ボディ層１０４から第１半導体層１０５へのキャリアの供給経路となる。ボディ層１０４からのキャリアの供給を受けて第１半導体層１０５の空乏層が速やかに狭められることで、半導体装置１０のオン抵抗が低減される。
　上記のとおり、半導体装置１０によれば、従来、トレードオフの関係にあった高耐圧化と低オン抵抗化とを両立することができる。また、半導体装置１０では、接続層１０７は、ドリフト層１０３と第２半導体層１１０の双方に接しており、ドリフト層１０３とのｐｎ接合部のみならず、第２半導体層１１０とのｐｎ接合部からも接続層１０７の空乏化が進行する。このため、従来の半導体装置よりも、ゲート電圧のオフ時に第１半導体層１０５が速やかにフローティング状態となる。
　図４～７は、半導体装置１０の製造方法の一例を示している。この製造方法では、まず、図４に示すように、ｎ層５０３（ドリフト層１０３となる層）と、ｎ層５０３の表面に形成されたｐ層５０４（ボディ層１０４となる層）と、ｐ層５０４の表面の一部に形成されたｎ層（ソース層１０９となる層。図４～７には図示していない）とを備えた、炭化ケイ素を材料とする半導体ウェハ５００を準備する。次に、半導体ウェハ５００の表面にマスク５５１を形成して、半導体ウェハ５００の表面側に、ｐ層５０４を貫通してｎ層５０３に到達するトレンチ５２１，５３１をエッチングによって形成する。次に、トレンチ５２１，５３１の底部に、半導体ウェハ５００の深さ方向（ｚ方向）に沿って、ｐ型の不純物イオンを注入し、第１半導体層５０５（第１半導体層１０５となる層）および半導体層５０６（半導体層１０６となる層）を形成する。
　次に、図５に示すように、半導体ウェハ５００の表面側から斜め方向にトレンチ５２１のｘ方向の内壁面よりやや離れた位置のｎ層５０３内にｐ型の不純物イオンを注入する。不純物イオンを注入する角度は、ｚ方向に対して角度θを成す方向である。角度θは、トレンチ５２１の深さ（ｚ方向の幅）および長手方向（ｘ方向）の幅によって適宜調整する。例えば、不純物イオンが半導体ウェハ５００の表面（トレンチを形成していない面）に当たることでトレンチ５２１のｘ方向の内壁面に到達しないことを避けられるように角度θを調整する。
　図５とｘ方向について逆側となるトレンチ５２１の内壁面に対しても、斜め方向にイオン注入を行って、図６に示すように、不純物イオンを注入した位置においてｐ層５０７（接続層１０７となる層）を形成し、トレンチ５２１とｐ層５０７との間に、ｎ層５１０（第２半導体層１１０となる層）を形成する。次に、マスク５１１を除去した後、１７００℃程度で活性化アニールを行う。
　次に、トレンチ５２１，５３１内にＣＶＤ等によってシリコン酸化膜を充填した後、底部近傍を残して不要なシリコン酸化膜をエッチバックして除去する。さらに、犠牲酸化によってトレンチ５２１，５３１の内壁面にシリコン酸化膜を形成した後、１３００℃程度でポストオキシデーションアニーリング（ＰＯＡ）を行う。さらに、トレンチ５２１，５３１内にポリシリコンを充填する。これによって、図７に示すように、トレンチ５２１内に、シリコン酸化物を材料とするゲート絶縁膜５２２に覆われた状態でポリシリコンを材料とするゲート電極５２３を充填し、トレンチゲート５２０（トレンチゲート１２０となる）を形成する。同時に、トレンチ５３１内に、シリコン酸化物を材料とする絶縁膜５３２に覆われた状態でポリシリコンを材料とする導電層５３３を充填し、周辺トレンチ５３０（周辺トレンチ１３０となる）を形成する。なお、半導体ウェハ５００の表面等に形成される余分なシリコン酸化膜およびポリシリコンは、エッチバックにより除去される。さらに、半導体ウェハ５００の裏面にｎ型の不純物イオンを注入して、レーザアニール法によってアニールし、ドレイン層となるｎ層を形成することで、図１に示す半導体装置１０を製造することができる。
　上記のとおり、半導体装置１０の製造方法では、接続層１０７等を形成するためにイオン注入の後の半導体ウェハ５００を１７００℃でアニールする。炭化ケイ素を材料とする半導体装置１０では、注入したイオンを活性化するためには高温でアニールする必要があるため、トレンチゲート１２０等を製造する工程は、接続層１０７を形成する工程の後工程とする必要がある。このため、トレンチゲート１２０等を形成する工程において、トレンチ１２０の内壁面から半導体ウェハ５００が目減りする場合がある。半導体装置１０では、接続層１０７は、第２半導体層１１０によってトレンチゲート１２０の長手方向（ｘ方向）の端部と離隔され、トレンチゲート１２０に接していないため、トレンチゲート１２０等を製造する工程において半導体ウェハ５００が目減りしても、接続層１０７は目減りしない。また、製造した半導体装置１０の検査工程において、トレンチ１２１のエッジ効果の影響を受けることなく、接続層１０７の大きさ等を検査によって確認することができる。半導体装置１０は、オン抵抗特性が良好であり、歩留りに優れている。
（変形例）
　第２半導体層１１０を形成するために、トレンチ５２１のｘ方向の内壁面により近い位置にｎ型の不純物イオンを注入してもよい。また、図８に示すように、接続層１０７に対して第２半導体層１１０とｘ方向に対向する位置に、ｎ型の半導体層１１２をさらに設けてもよい。ｎ型の半導体層１１２は、例えば、図５に示すｐ型の不純物イオンを半導体ウェハ５００に照射する工程の前に、同様に、半導体ウェハ５００の表面側から斜め方向にトレンチ５２１のｘ方向の内壁面よりやや離れた位置のｎ層５０３内にｎ型の不純物イオンを注入することで、形成することができる。また、図９に示すように、接続層２０７によって第１半導体層２１０が包囲され、ドリフト層１０３と隔離されていてもよい。
　また、接続層１０７のｐ型の不純物濃度は、第１半導体層１０５と同程度もしくはそれ以上の濃度であってもよい。接続層１０７は、ドリフト層１０３および第２半導体層１１０に接しており、この双方とのｐｎ接合面から接続層１０７の空乏化が進行する。このため、接続層１０７のｐ型の不純物濃度が比較的高い場合であっても、第１半導体層１０５がフローティング状態となり易い。また、接続層１０７に代えて、ポリシリコン層、タングステン等の金属層等の導電層を接続層として用いてもよい。この場合、接続層は、ドリフト層に埋め込まれていてもよい。接続層をドリフト層に埋め込んで形成する場合には、第２半導体層は、ドリフト層の一部であってもよい。
　以上、本発明の実施例について詳細に説明したが、これらは例示に過ぎず、特許請求の範囲を限定するものではない。特許請求の範囲に記載の技術には、以上に例示した具体例を様々に変形、変更したものが含まれる。
　本明細書または図面に説明した技術要素は、単独であるいは各種の組合せによって技術的有用性を発揮するものであり、出願時請求項記載の組合せに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成し得るものであり、そのうちの一つの目的を達成すること自体で技術的有用性を持つものである。
 

Claims (3)

  1. 　第１導電型のドリフト層と、
    　ドリフト層の表面に接するとともにその一部が半導体基板の表面に露出する第２導電型のボディ層と、
    　ボディ層の表面の一部に設けられ、半導体基板の表面に露出し、ボディ層によってドリフト層と分離されている第１導電型のソース層と、
    　ドリフト層の裏面に接するとともに半導体基板の裏面に露出する第１導電型のドレイン層と、
    　ボディ層を貫通してドリフト層に達するトレンチゲートと、
    　トレンチゲートの底部を包囲しており、ドリフト層によってボディ層より分離されている第２導電型の第１半導体層と、
    　トレンチゲートの長手方向の端部に沿って、その一端部がボディ層に接する一方で他端部が第１半導体層に接する第１導電型の第２半導体層と、
    　その一端部がボディ層に接続する一方で他端部が第１半導体層に接続し、かつ、第２半導体層に接し、第２半導体層によってトレンチゲートの長手方向の端部と離隔されている接続層と、
    を備えている半導体装置。
  2. 　接続層は、第２導電型の半導体層である、請求項１に記載の半導体装置。
  3. 　第２半導体層の第１導電型の不純物濃度は、ドリフト層の第１導電型の不純物濃度よりも高い、請求項１または２に記載の半導体装置。
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017063082A (ja) * 2015-09-24 2017-03-30 トヨタ自動車株式会社 絶縁ゲート型スイッチング素子とその製造方法
JP2019197792A (ja) * 2018-05-09 2019-11-14 三菱電機株式会社 炭化珪素半導体装置、電力変換装置、および炭化珪素半導体装置の製造方法
JP2020088158A (ja) * 2018-11-26 2020-06-04 トヨタ自動車株式会社 スイッチング素子
JP2020096082A (ja) * 2018-12-12 2020-06-18 トヨタ自動車株式会社 半導体装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105556647B (zh) * 2013-07-19 2017-06-13 日产自动车株式会社 半导体装置及其制造方法
JP6219704B2 (ja) * 2013-12-17 2017-10-25 トヨタ自動車株式会社 半導体装置
JP6560141B2 (ja) 2016-02-26 2019-08-14 トヨタ自動車株式会社 スイッチング素子
EP3443595B1 (en) * 2016-04-11 2020-10-07 ABB Power Grids Switzerland AG Insulated gate power semiconductor device and method for manufacturing such a device
JP6606007B2 (ja) * 2016-04-18 2019-11-13 トヨタ自動車株式会社 スイッチング素子
JP6702556B2 (ja) 2016-10-31 2020-06-03 株式会社東芝 半導体装置及びその製造方法
JP6883745B2 (ja) * 2017-03-24 2021-06-09 パナソニックＩｐマネジメント株式会社 半導体装置およびその製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006032420A (ja) * 2004-07-12 2006-02-02 Toyota Motor Corp 絶縁ゲート型半導体装置およびその製造方法
JP2007242852A (ja) 2006-03-08 2007-09-20 Toyota Motor Corp 絶縁ゲート型半導体装置およびその製造方法
JP2008135522A (ja) * 2006-11-28 2008-06-12 Toyota Motor Corp 半導体装置
JP2009081412A (ja) * 2007-09-06 2009-04-16 Toyota Motor Corp 半導体装置
JP2010114152A (ja) * 2008-11-04 2010-05-20 Toyota Motor Corp 半導体装置および半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003268710A1 (en) * 2002-10-04 2004-04-23 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device and process for fabricating the same
JP4538211B2 (ja) * 2003-10-08 2010-09-08 トヨタ自動車株式会社 絶縁ゲート型半導体装置およびその製造方法
US8159024B2 (en) * 2007-04-20 2012-04-17 Rensselaer Polytechnic Institute High voltage (>100V) lateral trench power MOSFET with low specific-on-resistance
JP2011044513A (ja) * 2009-08-20 2011-03-03 National Institute Of Advanced Industrial Science & Technology 炭化珪素半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006032420A (ja) * 2004-07-12 2006-02-02 Toyota Motor Corp 絶縁ゲート型半導体装置およびその製造方法
JP2007242852A (ja) 2006-03-08 2007-09-20 Toyota Motor Corp 絶縁ゲート型半導体装置およびその製造方法
JP2008135522A (ja) * 2006-11-28 2008-06-12 Toyota Motor Corp 半導体装置
JP2009081412A (ja) * 2007-09-06 2009-04-16 Toyota Motor Corp 半導体装置
JP2010114152A (ja) * 2008-11-04 2010-05-20 Toyota Motor Corp 半導体装置および半導体装置の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2924739A4

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017063082A (ja) * 2015-09-24 2017-03-30 トヨタ自動車株式会社 絶縁ゲート型スイッチング素子とその製造方法
JP2019197792A (ja) * 2018-05-09 2019-11-14 三菱電機株式会社 炭化珪素半導体装置、電力変換装置、および炭化珪素半導体装置の製造方法
JP7068916B2 (ja) 2018-05-09 2022-05-17 三菱電機株式会社 炭化珪素半導体装置、電力変換装置、および炭化珪素半導体装置の製造方法
JP2020088158A (ja) * 2018-11-26 2020-06-04 トヨタ自動車株式会社 スイッチング素子
JP7147510B2 (ja) 2018-11-26 2022-10-05 株式会社デンソー スイッチング素子
JP2020096082A (ja) * 2018-12-12 2020-06-18 トヨタ自動車株式会社 半導体装置
JP7135819B2 (ja) 2018-12-12 2022-09-13 株式会社デンソー 半導体装置

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