WO2013187410A1 - Substrat composite - Google Patents

Substrat composite Download PDF

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Publication number
WO2013187410A1
WO2013187410A1 PCT/JP2013/066089 JP2013066089W WO2013187410A1 WO 2013187410 A1 WO2013187410 A1 WO 2013187410A1 JP 2013066089 W JP2013066089 W JP 2013066089W WO 2013187410 A1 WO2013187410 A1 WO 2013187410A1
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WO
WIPO (PCT)
Prior art keywords
substrate
support substrate
composite
piezoelectric
piezoelectric substrate
Prior art date
Application number
PCT/JP2013/066089
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English (en)
Japanese (ja)
Inventor
裕二 堀
知義 多井
井出　晃啓
杉夫 宮澤
Original Assignee
日本碍子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本碍子株式会社 filed Critical 日本碍子株式会社
Priority to EP13804294.0A priority Critical patent/EP2863545B1/fr
Priority to KR1020147033991A priority patent/KR20150013234A/ko
Priority to CN201380030905.7A priority patent/CN104365019B/zh
Priority to JP2014521350A priority patent/JPWO2013187410A1/ja
Priority to KR1020167024362A priority patent/KR101694112B1/ko
Publication of WO2013187410A1 publication Critical patent/WO2013187410A1/fr
Priority to US14/561,622 priority patent/US9595657B2/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
    • C04B35/111—Fine ceramics
    • C04B35/115—Translucent or transparent products
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14502—Surface acoustic wave [SAW] transducers for a particular purpose
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates

Definitions

  • the present invention relates to a composite substrate.
  • an electrode is provided on a composite substrate obtained by bonding a support substrate and a piezoelectric substrate to produce an acoustic wave device.
  • the elastic wave device is used, for example, as a band-pass filter in communication equipment such as a mobile phone.
  • a composite substrate using lithium niobate or lithium tantalate as a piezoelectric substrate and silicon, quartz, or ceramics as a support substrate is known (see Patent Document 1). As ceramics, those widely used as packaging materials are described.
  • the conventional composite substrate has a problem that alignment is difficult during flip chip bonding (FCB) because the support substrate is made of an opaque ceramic.
  • FCB flip chip bonding
  • the composite substrate 110 in which the support substrate 112 and the piezoelectric substrate 114 are bonded together is arranged so that the piezoelectric substrate 114 is down and the support substrate 112 is up. It is necessary to align (align) the Au ball bumps 114 a on the piezoelectric substrate 114 and the electrode pads 102 a on the printed circuit board 102. The alignment is performed while checking with a camera arranged on the support substrate 112 side. At this time, although the piezoelectric substrate 114 is transparent, since the support substrate 112 is an opaque ceramic, alignment through the support substrate 112 is not easy.
  • the present invention has been made to solve such problems, and has as its main object to provide a composite substrate that can be easily aligned during FCB.
  • the composite substrate of the present invention is a composite substrate obtained by bonding a support substrate and a piezoelectric substrate, and the material of the support substrate is a translucent ceramic.
  • the alignment becomes easier in the case of FCB than in the case where the support substrate is made of an opaque ceramic. That is, in general, the piezoelectric substrate is transparent, and in the case of FCB, the piezoelectric substrate is down and the support substrate is up. However, since the support substrate is made of a translucent ceramic, the position of the piezoelectric substrate (on the piezoelectric substrate) The position of the ball bumps provided can be confirmed. This facilitates alignment.
  • the linear transmittance and the total forward light transmittance in the visible light region (360 to 750 nm, hereinafter the same) of the support substrate are preferably 10% or more and 70% or more, respectively. If it carries out like this, the effect of this invention mentioned above can be acquired more reliably.
  • the front total light transmittance of the support substrate is 80% or more at a wavelength of 200 nm.
  • the resolution of the exposure apparatus is defined by k ⁇ ⁇ / NA (k: coefficient, ⁇ : wavelength of light source, NA: numerical aperture of projection lens), a fine pattern is formed by exposure at a short wavelength. it can.
  • At least one of the front and back surfaces of the support substrate is preferably a rough surface (for example, arithmetic average roughness Ra is 5 to 20 nm).
  • the front total light transmittance at a wavelength of 200 nm is higher than when both front and back surfaces are mirror surfaces (for example, arithmetic average roughness Ra is 0.5 to 2 nm).
  • both surfaces of the support substrate are rough because the front total light transmittance at a wavelength of 200 nm is higher.
  • the support substrate and the piezoelectric substrate are bonded together via an adhesive layer, and the refractive index of the adhesive layer is between the refractive index of the support substrate and the refractive index of the piezoelectric substrate. It is preferable that it is the value of. In this way, light emitted from above the piezoelectric substrate can easily pass through the adhesive layer and the support substrate.
  • the support substrate may include a cavity. Since the support substrate is obtained by molding and firing a light-transmitting ceramic raw material, when producing a support substrate having a cavity, a mold that can provide a molded body having the cavity is used. That's fine. This eliminates the need for masking and etching processes. For example, when a silicon substrate is used instead of a translucent ceramic substrate as a support substrate, in order to create a cavity in the silicon substrate, first, mask one surface of the silicon substrate (the surface opposite to the surface bonded to the piezoelectric substrate). And then exposing and developing the mask, and then etching the unmasked portion.
  • the thermal expansion coefficient of the support substrate is preferably 4 to 9 ppm / ° C. By doing so, the thermal expansion at high temperature is small and the temperature characteristic improving effect is excellent.
  • the average crystal grain size of the support substrate is preferably 10 ⁇ m to 50 ⁇ m. In this case, since the average crystal grain size is small, unnecessary reflection of bulk waves can be reduced. Further, the UV transmittance and strength are also increased.
  • the material of the support substrate is preferably a translucent alumina ceramic.
  • the characteristics of the support substrate made of translucent alumina ceramic are as follows. -Linear transmittance: 10% or more in the visible light region-Front total light transmittance: 70% or more in the visible light region (80% or more when the wavelength is 200 nm), and this transmittance increases rapidly on the shorter wavelength side than the wavelength of 300 nm. ⁇ Alumina purity 99.9% or more ⁇ Crystal grain size 10-50 ⁇ m ⁇ Coefficient of thermal expansion 4-9ppm / ° C
  • FIG. 2 is a perspective view illustrating an outline of a configuration of a composite substrate 10
  • FIG. 5 is a perspective view showing a manufacturing process of the composite substrate 10.
  • 1 is a perspective view of a 1-port SAW resonator 30 manufactured using a composite substrate 10.
  • FIG. FIG. 4 is an explanatory diagram showing a state when the composite substrate 110 is mounted on the printed circuit board 102.
  • FIG. 1 is a perspective view schematically showing the configuration of a composite substrate 10 according to an embodiment of the present invention.
  • the composite substrate 10 is obtained by bonding a support substrate 12 and a piezoelectric substrate 14, and in this embodiment, the support substrate 12 and the piezoelectric substrate 14 are bonded by an adhesive layer 16. It is.
  • the composite substrate 10 is formed in a circular shape in which one place is flat. This flat portion is a portion called an orientation flat (OF), and is used, for example, when detecting the wafer position and direction when performing various operations in the manufacturing process of the surface acoustic wave device.
  • OF orientation flat
  • the support substrate 12 is a translucent alumina ceramic substrate having an alumina purity of 99% or more and a thermal expansion coefficient of 4 to 9 ppm / ° C.
  • the linear transmittance in the visible light region of the support substrate 12 is 10% or more.
  • the front total light transmittance in the visible light region of the support substrate 12 is 70% or more, and when the wavelength is 200 nm, it is 80% or more, preferably 85% or more, more preferably 90% or more.
  • the arithmetic surface roughness Ra on both sides of the support substrate 12 is 0.5 to 20 nm.
  • the front total light transmittance is higher when one surface is a mirror surface and the other surface is rough (for example, Ra 5 to 20 nm). Therefore, a rough surface on both sides is preferable because the total light transmittance of the front is further increased.
  • the average crystal grain size of the support substrate 12 is 10 ⁇ m to 50 ⁇ m.
  • the piezoelectric substrate 14 is a piezoelectric substrate capable of propagating elastic waves (for example, surface acoustic waves).
  • Examples of the material of the piezoelectric substrate 14 include lithium tantalate, lithium niobate, lithium borate, and quartz. Their coefficient of thermal expansion is 13 to 16 ppm / ° C. Such a piezoelectric substrate 14 is transparent.
  • the adhesive layer 16 is a layer that bonds the support substrate 12 and the piezoelectric substrate 14 together.
  • the material of the adhesive layer 16 is not particularly limited, but an organic adhesive having heat resistance is preferable, and examples thereof include an epoxy adhesive and an acrylic adhesive.
  • the refractive index of the adhesive layer 16 is a value between the refractive index of the support substrate 12 and the refractive index of the piezoelectric substrate 14.
  • the thickness of the adhesive layer 16 is 1 ⁇ m or less, preferably 0.2 to 0.6 ⁇ m.
  • FIG. 2 is a perspective view showing a manufacturing process of the composite substrate 10.
  • a support substrate 12 having an OF and a predetermined diameter and thickness is prepared.
  • a piezoelectric substrate 24 having the same diameter as that of the support substrate 12 is prepared (see FIG. 2A).
  • the piezoelectric substrate 24 is thicker than the piezoelectric substrate 14.
  • the adhesive is uniformly applied to at least one of the front surface of the support substrate 12 and the back surface of the piezoelectric substrate 24. Thereafter, the substrates 12 and 24 are bonded together, and when the adhesive is a thermosetting resin, it is cured by heating.
  • the adhesive When the adhesive is a photocurable resin, it is cured by irradiating with light. (See FIG. 2 (b)). Thereafter, the piezoelectric substrate 24 is polished and thinned to a predetermined thickness by a polishing machine to obtain the piezoelectric substrate 14 to obtain the composite substrate 10 (see FIG. 2C).
  • FIG. 3 shows a state in which the composite substrate 10 is an aggregate of 1-port SAW resonators 30 that are surface acoustic wave devices.
  • the 1-port SAW resonator 30 is obtained by forming IDT electrodes 32 and 34 and a reflective electrode 36 on the surface of the piezoelectric substrate 14 by a photolithography technique.
  • the IDT electrodes 32 and 34 are formed as follows, for example.
  • a photoresist is applied on the piezoelectric substrate 14, and light is irradiated to the photoresist through a photomask. Next, it is immersed in a developing solution, and unnecessary photoresist is removed.
  • the photoresist is a negative resist, the portion of the photoresist that has been exposed to light remains on the piezoelectric substrate 14.
  • the photoresist is a positive resist, a portion of the photoresist that has not been exposed to light remains on the piezoelectric substrate 14.
  • electrode material for example, Al
  • the photoresist is removed, whereby comb-shaped IDT electrodes 32 and 34 are obtained.
  • the IDT electrode 32 has a positive pole and the IDT electrode 34 has a negative pole, and are patterned so as to be alternately arranged.
  • the interval (periodic interval) between adjacent + poles corresponds to the wavelength ⁇ , and the value obtained by dividing the sound velocity v by the wavelength ⁇ corresponds to the resonance frequency fr.
  • the support substrate 12 is made of a translucent alumina ceramic, compared with the case where the support substrate is made of an opaque ceramic, it is more suitable for FCB. It becomes easy to align. That is, in the case of FCB, the transparent piezoelectric substrate 14 is on the lower side and the support substrate 12 is on the upper side. However, since the support substrate 12 is made of translucent ceramic, the position of the piezoelectric substrate 14 through the support substrate 12 (on the piezoelectric substrate 14) The position of the Au ball bumps provided can be confirmed. This facilitates alignment. Moreover, since the composite substrate 10 has a linear transmittance and a total front light transmittance in the visible light region of the support substrate 12 of 10% or more and 70% or more, respectively, such an effect can be obtained more reliably.
  • the thermal expansion coefficient of the support substrate 12 is smaller than that of the piezoelectric substrate 14, a change in the size of the piezoelectric substrate 14 when the temperature changes is suppressed by the support substrate 12. Therefore, it is possible to suppress a change in frequency characteristics with respect to temperature of an acoustic wave device manufactured using the composite substrate 10.
  • the composite substrate 10 has a thermal expansion coefficient of 4 to 9 ppm / ° C. of the support substrate 12, the thermal expansion at high temperature is small, and the effect of improving the temperature characteristics of the acoustic wave device is excellent.
  • the composite substrate 10 has a front total light transmittance of 80% or more at a wavelength of 200 nm. Therefore, after forming a photoresist film on the surface of the piezoelectric substrate 24, when performing exposure of the photoresist film using UV near a wavelength of 200 nm, the reflection at the interface between the piezoelectric substrate 24 and the support substrate 12 is suppressed, High-precision patterning is possible. Further, since the resolution of the exposure apparatus is defined by k ⁇ ⁇ / NA (k: coefficient, ⁇ : wavelength of light source, NA: numerical aperture of projection lens), a fine pattern is formed by exposure at a short wavelength. it can.
  • the refractive index of the adhesive layer 16 is a value between the refractive index of the support substrate 12 and the refractive index of the piezoelectric substrate 14, the light irradiated from above the piezoelectric substrate 14 is the adhesive layer 16 and the support substrate 12. Easier to pass through.
  • the average crystal grain size of the support substrate 12 is as small as 10 ⁇ m to 50 ⁇ m, unnecessary bulk wave reflection can be reduced. Further, the UV transmittance and strength are also increased.
  • a surface acoustic wave device that is one of acoustic wave devices is manufactured using the composite substrate 10
  • a Lamb wave element or a thin film resonator (FBAR) is manufactured using the composite substrate 10.
  • Other acoustic wave devices such as may be manufactured.
  • the composite substrate 10 is manufactured by bonding the support substrate 12 and the piezoelectric substrate 14 with the adhesive layer 16, but the composite substrate is manufactured by bonding the support substrate 12 and the piezoelectric substrate 14 together by direct bonding. May be.
  • the substrates 12 and 14 are bonded together by direct bonding, for example, the following method is exemplified. That is, first, the bonding surfaces of both the substrates 12 and 14 are washed, and impurities (oxides, adsorbed substances, etc.) adhering to the bonding surfaces are removed.
  • the substrates 12 and 14 are irradiated with an ion beam of an inert gas such as argon on the bonding surfaces of both substrates, thereby removing the remaining impurities and activating the bonding surfaces. Thereafter, the substrates 12 and 14 are bonded together at room temperature in a vacuum.
  • an inert gas such as argon
  • the support substrate 12 may include a cavity. Since the support substrate 12 is obtained by molding and firing a light-transmitting alumina ceramic raw material, when producing the support substrate 12 having a cavity, a mold capable of obtaining a molded body having the cavity. Can be used. This eliminates the need for masking and etching processes. For example, when a silicon substrate is used as the support substrate 12 instead of a translucent alumina ceramic substrate, a cavity is formed in the silicon substrate. First, one surface of the silicon substrate (the surface opposite to the surface to be bonded to the piezoelectric substrate) is used. Is then covered with a mask, then the mask is exposed and developed, and then the unmasked portions are etched.
  • the support substrate 12 is a translucent alumina ceramic substrate, but the support substrate 12 may be a translucent ceramic substrate other than alumina. Even in such a case, the effect of easy alignment can be obtained during FCB.
  • Translucent alumina substrate (support substrates A to C)
  • a translucent alumina substrate having a diameter of 100 mm was prepared by the following manufacturing method. First, the slurry which mixed the component of Table 1 was prepared. The ⁇ -alumina powder used had a specific surface area of 3.5 to 4.5 m 2 / g and an average primary particle size of 0.35 to 0.45 ⁇ m.
  • the slurry was poured into an aluminum alloy mold at room temperature, and left at room temperature for 1 hour. Subsequently, it was left to stand at 40 ° C. for 30 minutes, and after solidification proceeded, it was released from the mold. Furthermore, it was left to stand at room temperature and then at 90 ° C. for 2 hours to obtain a plate-like powder compact.
  • the additive mainly magnesia, etc.
  • the additive is discharged, and weight is applied during annealing (by applying a load), and annealing is performed at the same temperature as firing, thereby densifying. Promoted.
  • a translucent alumina substrate was obtained.
  • a support substrate hereinafter referred to as support substrate A
  • support substrate B a support substrate
  • support substrate C a support substrate having one side polished and one side ground. Grinding was performed using diamond abrasive grains, # 1500 grindstone. Polishing was performed by lapping the ground surface with diamond abrasive grains having an average particle size of 0.5 ⁇ m and further polishing the surface with colloidal silica slurry and a hard urethane pad. About each support substrate, arithmetic mean roughness (Ra) was measured with the stylus type surface roughness meter.
  • FIG. 4 shows a graph of the front total light transmittance spectrum. Furthermore, the average crystal grain size, thermal expansion coefficient, and linear transmittance in the visible light region of each support substrate were measured. The results are also shown in Table 2.
  • the front total light transmittance was calculated based on the measured value obtained by the measuring apparatus 40 of FIG.
  • the opening of the integrating sphere 41 is closed with a sample S (thickness 3 mm), and a plate 42 having a hole 44 (diameter ⁇ 3 mm) is placed on the upper surface of the sample S.
  • the sample S is irradiated to the sample S through the hole 44, the light passing through the sample S is collected using the integrating sphere 41, and the intensity of the light is measured by the detector 48.
  • Front total light transmittance 100 ⁇ (measured light intensity) / (light source intensity)
  • Example 1 (composite substrate)
  • an epoxy adhesive having a refractive index of 1.9 was applied with a thickness of 1 ⁇ m or less using a spinner.
  • the refractive index of the adhesive is between LiTaO 3 (refractive index 2.1) and translucent alumina (refractive index 1.7)
  • the light irradiated from above the LiTaO 3 is supported by the adhesive layer and the support layer. It becomes easy to pass through the substrate A (light transmission is improved). Therefore, an epoxy adhesive having a refractive index of 1.9 was used.
  • a separately prepared 42 Y-X LiTaO 3 piezoelectric substrate having a thickness of 230 ⁇ m (42 ° Y-cut X-propagating LiTaO 3 piezoelectric substrate whose cutting angle is a rotational Y-cut) is bonded to the support substrate A, and the temperature is low at about 150 ° C. Baked.
  • the surface of the piezoelectric substrate was roughly polished with a grinder to reduce the thickness of the piezoelectric substrate to 25 ⁇ m. Furthermore, the surface was similarly polished with colloidal silica and a hard urethane pad to make the surface mirror-like. At this time, the thickness of the piezoelectric substrate was 20 ⁇ m. Finally, it was put into an oven at 250 ° C., and the adhesive was completely cured to obtain a composite substrate.
  • a comb-shaped IDT electrode made of aluminum was formed on the composite substrate piezoelectric substrate through a photolithography process, and a SAW resonator was created.
  • the IDT electrode was formed by lift-off using an ArF exposure machine having a wavelength of 193 nm. In lift-off, first, a negative resist was applied to the surface of the piezoelectric substrate, and light was irradiated to the negative resist through a photomask. Next, it was immersed in a developing solution to remove unnecessary negative resist. As a result, the portion of the negative resist that was exposed to light remained on the piezoelectric substrate. Next, Al as an electrode material was deposited on the entire surface, and the negative resist was removed to obtain an IDT electrode having a desired pattern.
  • the period interval of the IDT electrodes was 4.5 ⁇ m.
  • a resonance frequency was found near 920 MHz at room temperature. Further, this SAW resonator was placed in a thermostatic bath, the temperature was changed from ⁇ 20 to 90 ° C., and the resonance frequency at that time was measured.
  • TCF frequency temperature coefficient
  • Example 1 composite substrate was prepared according to the manufacturing method of Example 1 except that a Si substrate was used instead of the translucent alumina substrate as a support substrate, and a SAW resonator was prepared on the piezoelectric substrate.
  • a Si substrate was used instead of the translucent alumina substrate as a support substrate
  • a SAW resonator was prepared on the piezoelectric substrate.
  • UV light was reflected at the bonding interface between the piezoelectric substrate and the support substrate, and the patterning accuracy of the IDT electrode was deteriorated as compared with Example 1. Therefore, the variation in the resonance frequency is larger than that in the first embodiment.
  • the present invention can be used for a surface acoustic wave device, a Lamb wave element, a thin film resonator (FBAR) and the like.
  • FBAR thin film resonator

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

L'invention concerne un substrat composite (10) qui est obtenu en liant ensemble un substrat de support (12) et un substrat piézoélectrique (14), et le substrat de support (12) et le substrat piézoélectrique (14) sont liés ensemble par une couche adhésive (16) dans un mode de réalisation de la présente invention. Puisque le substrat de support (12) de ce substrat composite (10) est formé d'une céramique d'alumine transmettrice de lumière, l'alignement pendant le FCB peut être facilement fait en comparaison avec les cas où un substrat de support est formé d'une céramique opaque. De plus, il est préférable que la transmittance linéaire et la transmittance de lumière vers l'avant totale du substrat de support (12) dans le spectre de lumière visible (360-750 nm) soient supérieure ou égale à 10 % et supérieure ou égale à 70 %, respectivement.
PCT/JP2013/066089 2012-06-13 2013-06-11 Substrat composite WO2013187410A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
EP13804294.0A EP2863545B1 (fr) 2012-06-13 2013-06-11 Substrat composite
KR1020147033991A KR20150013234A (ko) 2012-06-13 2013-06-11 복합 기판
CN201380030905.7A CN104365019B (zh) 2012-06-13 2013-06-11 复合基板
JP2014521350A JPWO2013187410A1 (ja) 2012-06-13 2013-06-11 複合基板
KR1020167024362A KR101694112B1 (ko) 2012-06-13 2013-06-11 복합 기판
US14/561,622 US9595657B2 (en) 2012-06-13 2014-12-05 Composite substrate

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US201261658988P 2012-06-13 2012-06-13
US61/658988 2012-06-13

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US14/561,622 Continuation US9595657B2 (en) 2012-06-13 2014-12-05 Composite substrate

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WO2013187410A1 true WO2013187410A1 (fr) 2013-12-19

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EP (1) EP2863545B1 (fr)
JP (1) JPWO2013187410A1 (fr)
KR (2) KR101694112B1 (fr)
CN (1) CN104365019B (fr)
TW (1) TWI605937B (fr)
WO (1) WO2013187410A1 (fr)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015098609A1 (fr) * 2013-12-25 2015-07-02 日本碍子株式会社 Substrat de traitement, substrat composite pour semi-conducteur, et substrat de circuit de semi-conducteur et son procédé de fabrication
JP2016058567A (ja) * 2014-09-10 2016-04-21 日本碍子株式会社 透光性焼結セラミック支持体及びその製造方法
JP2016100729A (ja) * 2014-11-20 2016-05-30 太陽誘電株式会社 弾性波デバイスの製造方法
KR20160120719A (ko) * 2014-02-18 2016-10-18 엔지케이 인슐레이터 엘티디 반도체용 복합 기판의 핸들 기판 및 반도체용 복합 기판
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KR20150013234A (ko) 2015-02-04
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TW201418009A (zh) 2014-05-16
CN104365019B (zh) 2017-08-25
EP2863545A4 (fr) 2016-02-24
KR20160108592A (ko) 2016-09-19
TWI605937B (zh) 2017-11-21
EP2863545B1 (fr) 2020-01-15
KR101694112B1 (ko) 2017-01-06
US9595657B2 (en) 2017-03-14
US20150102707A1 (en) 2015-04-16
JPWO2013187410A1 (ja) 2016-02-04

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