JPWO2016084767A1 - 半導体用円形支持基板 - Google Patents
半導体用円形支持基板 Download PDFInfo
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- JPWO2016084767A1 JPWO2016084767A1 JP2016561571A JP2016561571A JPWO2016084767A1 JP WO2016084767 A1 JPWO2016084767 A1 JP WO2016084767A1 JP 2016561571 A JP2016561571 A JP 2016561571A JP 2016561571 A JP2016561571 A JP 2016561571A JP WO2016084767 A1 JPWO2016084767 A1 JP WO2016084767A1
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- support substrate
- circular support
- semiconductor chip
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Classifications
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Abstract
Description
また、特許文献2には、支持基板の加工基板と貼り合わせる側とは反対側の面に、支持基板に比べて反射率や光透過率などの光学特性が大きく異なる光検出用の膜を設け、この光検出用の膜を光学センサで検出して位置合わせを行うことが提案されている。この支持基板はウェハとほぼ同一のサイズにすることが可能であるが、光検出用の膜を形成する手間がかかり、また、プロセス処理装置に反射率や透過率が測定できる光学系を組み込む必要がある。
前記弦が円形支持基板の中心軸を通る直線に対して線対称とならない位置に設けられていることを特徴とする円形支持基板。
2.前記弦の両端と前記円形支持基板の中心軸とを結ぶ線とのなす角が、12〜36度であることを特徴とする1.に記載の円形支持基板。
3.前記円形支持基板の中心軸から前記少なくとも3つの弦へ下ろした垂線のうち2本の垂線のなす角が、90度または180度であることを特徴とする1.または2.に記載の円形支持基板。
4.前記円形支持基板が3つの弦を有し、
前記円形支持基板の中心軸から前記3つの弦へ下ろした3本の垂線のなす角がそれぞれ、90度、120度、150度であることを特徴とする1.〜3.のいずれかに記載の円形支持基板。
5.前記支持基板が42アロイ、インバー合金、コバール合金のいずれかからなることを特徴とする1.〜4.のいずれかに記載の円形支持基板。
6.一方の面と他方の面との物性が異なることを特徴とする1.〜5.のいずれかに記載の円形支持基板。
7.前記支持基板の一方の面が面取りされており、他方の面が面取りされていないことを特徴とする1.〜6.のいずれかに記載の円形支持基板。
8.1.〜7.のいずれかに記載の円形支持基板、
前記円形支持基板に接合された半導体チップ、
前記半導体チップを封止する封止樹脂部、
前記半導体チップのパッドと導電部により電気的に接続された外部電極、
を少なくとも有することを特徴とする半導体パッケージ。
9.前記外部電極がバンプであることを特徴とする8.に記載の半導体パッケージ。
10.1.〜7.のいずれかに記載の円形支持基板にウェハを接合する工程を有することを特徴とする半導体パッケージの製造方法。
11.少なくとも下記工程をこの順で有することを特徴とする半導体パッケージの製造方法:
1.〜7.のいずれかに記載の円形支持基板上に半導体チップをパッドが上面となるように接合する第一工程、
半導体チップを樹脂で封止する第二工程、
半導体チップのパッドを覆う樹脂を除去する第三工程、
再配線層を形成する第四工程、
バンプを形成する第五工程。
12.少なくとも下記工程をこの順で有することを特徴とする半導体パッケージの製造方法:
1.〜7.のいずれかに記載の円形支持基板上に半導体チップをパッドが下面となるように接合する第一工程、
半導体チップを樹脂で封止する第二工程、
円形支持基板を剥離し、パッドが上面となるように反転する第三工程、
再配線層を形成する第四工程、
バンプを形成する第五工程。
2 外部電極
3 再配線層
4 半導体チップ
5 接着剤
6 支持基板
7 封止樹脂部
8 パッド
9 導電部
10 半導体パッケージ
11 銅層
12 レジスト層
13 ビアホール
14 ソルダーレジスト
15 はんだボール
図3に、一方の面が面取り加工され、他方の面は面取り加工されていない円形支持基板の断面図を示す。面取りは、図3(a)に示すように丸面、または図3(b)、(c)に示すように角面に行うことができる。図3(a)、(b)では面取り加工されていない面と側面とのなす角は90度である。図3(c)に示すように面取りが大きくなると、面取り加工されていない面と側面とのなす角度は90度以下になるが、この角度は75〜90度であることが好ましい。75度より小さいと鋭角になりすぎて、割れや欠けが生じやすくなる。円形支持基板は半導体パッケージ製造に用いられるものであるため、異物の発生源となりうる割れや欠けが生じることは好ましくない。
42アロイからなる直径13.5mm、厚さ0.2mmの円形支持基板1上に、シリコンからなる直径0.5インチ(12.5mm)、厚さ0.25mmの円形の半導体チップ4をパッド8が上面、かつ円形支持基板1と同心円となるように接着剤5を用いて接合する(図5)。接着剤5は熱伝導性接着剤であることが好ましい。本発明の円形支持基板1は、外周形状から面取り加工が施された面を判別することができるため、誤った面に半導体チップ4を接合することを防ぐことができる。また、半導体チップ4が円形であるため、接合時に均一に拡がる未硬化の接着剤が半導体チップの端部からはみ出すことを防ぐことができる。
円形支持基板1は図1に示す形状であり、中心軸から弦に下ろした3つの垂線のなす角がそれぞれ90度、120度、150度である。また、弦の中心角は24度、矢高は0.15mmである。
直径12.8mm、深さ0.4mmの円柱状の凹部が設けられた金型を、円形支持基板1上に密着させてキャビティを形成する。熱硬化性樹脂をキャビティ内に注型、硬化してモールド成形を行い、半導体チップ4の上面と側面とを封止する封止樹脂部7を形成する(図6)。使用する樹脂は特に制限されず、市販されているものを特に制限することなく使用することができる。一般に半導体を封止する樹脂としては、エポキシ樹脂を主成分とし、フェノール樹脂系硬化剤、シリカフィラーなどの無機充填剤を配合した組成物が用いられているが、フェノール樹脂、シリコーン樹脂等も特に制限することなく用いることができる。
なお、円形支持基板1の面取りされている側の面に半導体チップ4を接合すると、金型と円形支持基板1とが接触する幅が0.20mmよりも狭くなるため、樹脂が金型からはみ出してバリが生じやすくなる。
上記第二工程で、半導体チップ4の上面は封止樹脂部7で覆われているため、半導体チップ4の信号の入出力に用いるパッド8を覆う樹脂をレーザアブレーションにより除去しパッド8を露出させる(図7)。
通常、半導体チップ4を封止する樹脂は光による誤作動を防ぐために黒色に着色されているため、円形の半導体チップ4が黒色の封止樹脂部7で封止されるとパッド8の位置が外観からは分からなくなってしまう。本発明で使用する円形支持基板1の3つの弦に対して半導体チップ4のパッド8の位置を予め関連付けておけば、弦の位置を用いてパッド8の位置を求めることができる。また、ここで使用した円形支持基板1は、中心軸から弦へ下ろした3つの垂線のなす角がそれぞれ90度、120度、150度であり、この3つの弦を用いてX方向、Y方向、傾き(θ)の高精度な位置合わせが可能であるから、製造工程での位置ずれは非常に小さい。
パッド8と外部電極2とを接続するための導電部9を有する再配線層3を形成する。再配線層3の形成には、通常使用される公知の工程を利用することができる。一例として、以下の工程を用いることができる。
ボールマウンターを用いてビアホール13上にはんだボール15を搭載する(図13)。リフロー装置で加熱してはんだボールを熔融させて外部電極2であるバンプを形成するとともに、外部電極2とパッド8とを導電部9を通じて電気的に接続する(図14)。
円形支持基板の面取り加工がされていない面上に半導体チップをパッドが下面となるように接合する第一工程。
半導体チップを樹脂で封止する第二工程。
円形支持基板を剥離し、パッドが上面となるように反転する第三工程。
再配線層を形成する第四工程。
バンプを形成する第五工程。
円形支持基板1上に、円形の半導体チップ4をパッド8が下面、かつ円形支持基板1と同心円となるように接着剤5を用いて接合する(図16)。この接着剤5は、後に再配線層3に組み込まれるため、絶縁性のものを用いる。
第二工程で封止樹脂部7が形成されたのち(図17)、円形支持基板1を剥離して、パッド8が上面となるように反転する(図18)。
Claims (12)
- 円周上に少なくとも3つの弦を有し、
前記弦が円形支持基板の中心軸を通る直線に対して線対称とならない位置に設けられていることを特徴とする円形支持基板。 - 前記弦の両端と前記円形支持基板の中心軸とを結ぶ線とのなす角が、12〜36度であることを特徴とする請求項1に記載の円形支持基板。
- 前記円形支持基板の中心軸から前記少なくとも3つの弦へ下ろした垂線のうち2本の垂線のなす角が、90度または180度であることを特徴とする請求項1または2に記載の円形支持基板。
- 前記円形支持基板が3つの弦を有し、
前記円形支持基板の中心軸から前記3つの弦への垂線へ下ろした3本の垂線のなす角がそれぞれ、90度、120度、150度であることを特徴とする請求項1〜3のいずれかに記載の円形支持基板。 - 前記支持基板が42アロイ、インバー合金、コバール合金のいずれかからなることを特徴とする請求項1〜4のいずれかに記載の円形支持基板。
- 一方の面と他方の面との物性が異なることを特徴とする請求項1〜5のいずれかに記載の円形支持基板。
- 前記支持基板の一方の面が面取りされており、他方の面が面取りされていないことを特徴とする請求項1〜6のいずれかに記載の円形支持基板。
- 請求項1〜7のいずれかに記載の円形支持基板、
前記円形支持基板に接合された半導体チップ、
前記半導体チップを封止する封止樹脂部、
前記半導体チップのパッドと導電部により電気的に接続された外部電極、
を少なくとも有することを特徴とする半導体パッケージ。 - 前記外部電極がバンプであることを特徴とする請求項8に記載の半導体パッケージ。
- 請求項1〜7のいずれかに記載の円形支持基板にウェハを接合する工程を有することを特徴とする半導体パッケージの製造方法。
- 少なくとも下記工程をこの順で有することを特徴とする半導体パッケージの製造方法:
請求項1〜7のいずれかに記載の円形支持基板上に半導体チップをパッドが上面となるように接合する第一工程、
半導体チップを樹脂で封止する第二工程、
半導体チップのパッドを覆う樹脂を除去する第三工程、
再配線層を形成する第四工程、
バンプを形成する第五工程。 - 少なくとも下記工程をこの順で有することを特徴とする半導体パッケージの製造方法:
請求項1〜7のいずれかに記載の円形支持基板上に半導体チップをパッドが下面となるように接合する第一工程、
半導体チップを樹脂で封止する第二工程、
円形支持基板を剥離し、パッドが上面となるように反転する第三工程、
再配線層を形成する第四工程、
バンプを形成する第五工程。
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US10163674B2 (en) | 2018-12-25 |
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