JP4914167B2 - 扁平な側面を有するa面窒化物半導体単結晶基板 - Google Patents
扁平な側面を有するa面窒化物半導体単結晶基板 Download PDFInfo
- Publication number
- JP4914167B2 JP4914167B2 JP2006278259A JP2006278259A JP4914167B2 JP 4914167 B2 JP4914167 B2 JP 4914167B2 JP 2006278259 A JP2006278259 A JP 2006278259A JP 2006278259 A JP2006278259 A JP 2006278259A JP 4914167 B2 JP4914167 B2 JP 4914167B2
- Authority
- JP
- Japan
- Prior art keywords
- plane
- nitride semiconductor
- flat side
- substrate
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Description
OF2 c面における扁平な側面部
OF3 r面における扁平な側面部
Claims (1)
- 円形の形状を有し、主面がa面({11−20}面)であり、結晶方向において1個ないし3個の扁平な側面(orientation flat)を有し、
前記扁平な側面は、m面、c面、及び前記m面とc面の何れか1つの面にのみ接するr面に形成され、
表裏面の区別が可能であることを特徴とするa面窒化物半導体単結晶基板。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050098379A KR20070042594A (ko) | 2005-10-19 | 2005-10-19 | 편평한 측면을 갖는 a면 질화물 반도체 단결정 기판 |
KR10-2005-0098379 | 2005-10-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007116152A JP2007116152A (ja) | 2007-05-10 |
JP4914167B2 true JP4914167B2 (ja) | 2012-04-11 |
Family
ID=37719259
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006278259A Expired - Fee Related JP4914167B2 (ja) | 2005-10-19 | 2006-10-12 | 扁平な側面を有するa面窒化物半導体単結晶基板 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20070085170A1 (ja) |
EP (1) | EP1777325A3 (ja) |
JP (1) | JP4914167B2 (ja) |
KR (1) | KR20070042594A (ja) |
CN (1) | CN1958887B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2016084767A1 (ja) * | 2014-11-27 | 2017-09-28 | 国立研究開発法人産業技術総合研究所 | 半導体用円形支持基板 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9803293B2 (en) | 2008-02-25 | 2017-10-31 | Sixpoint Materials, Inc. | Method for producing group III-nitride wafers and group III-nitride wafers |
JP4869179B2 (ja) * | 2007-08-10 | 2012-02-08 | 三洋電機株式会社 | 半導体基板およびその製造方法 |
JP4981602B2 (ja) * | 2007-09-25 | 2012-07-25 | パナソニック株式会社 | 窒化ガリウム基板の製造方法 |
WO2009149300A1 (en) | 2008-06-04 | 2009-12-10 | Sixpoint Materials | High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitride crystals using high-pressure vessel and group iii nitride crystal |
EP2281076A1 (en) | 2008-06-04 | 2011-02-09 | Sixpoint Materials, Inc. | Methods for producing improved crystallinty group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth |
JP2010067930A (ja) * | 2008-09-12 | 2010-03-25 | Toshiba Corp | 半導体装置およびその製造方法 |
CN106990126B (zh) * | 2017-04-25 | 2019-08-09 | 山东大学 | 一种偏向SiC晶体的大边、小边精确定向方法 |
JP6675085B2 (ja) * | 2018-04-18 | 2020-04-01 | パナソニックIpマネジメント株式会社 | Iii族窒化物半導体基板及びその製造方法 |
JP7549322B2 (ja) * | 2020-04-01 | 2024-09-11 | 株式会社ノベルクリスタルテクノロジー | 半導体基板及びその製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2676806B2 (ja) | 1988-08-23 | 1997-11-17 | 富士通株式会社 | メモリ保護方式 |
JP3935977B2 (ja) * | 1995-05-16 | 2007-06-27 | Sumco Techxiv株式会社 | ノッチ付き半導体ウェーハ |
US6809010B1 (en) * | 1996-02-29 | 2004-10-26 | Kyocera Corporation | Sapphire single crystal, semiconductor laser diode using the same for substrate, and method for manufacturing the same |
JP2882355B2 (ja) * | 1996-04-10 | 1999-04-12 | 住友電気工業株式会社 | Iii −v族化合物半導体ウエハ及びその製造方法 |
JP3164016B2 (ja) | 1996-05-31 | 2001-05-08 | 住友電気工業株式会社 | 発光素子および発光素子用ウエハの製造方法 |
WO1998047170A1 (en) * | 1997-04-11 | 1998-10-22 | Nichia Chemical Industries, Ltd. | Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device |
US6596079B1 (en) * | 2000-03-13 | 2003-07-22 | Advanced Technology Materials, Inc. | III-V nitride substrate boule and method of making and using the same |
JP2002222746A (ja) | 2001-01-23 | 2002-08-09 | Matsushita Electric Ind Co Ltd | 窒化物半導体ウェーハ及びその製造方法 |
JP2002356398A (ja) * | 2001-06-01 | 2002-12-13 | Sumitomo Electric Ind Ltd | 窒化ガリウムウエハ |
KR100576223B1 (ko) * | 2002-10-01 | 2006-05-03 | 주식회사 엘지화학 | 폴리카보네이트 수지의 제조방법 |
KR101372698B1 (ko) * | 2002-12-16 | 2014-03-11 | 독립행정법인 과학기술진흥기구 | 수소화합물 기상 성장법에 의한 평면, 비극성 질화 갈륨의 성장 |
US7427555B2 (en) * | 2002-12-16 | 2008-09-23 | The Regents Of The University Of California | Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy |
US7098487B2 (en) * | 2002-12-27 | 2006-08-29 | General Electric Company | Gallium nitride crystal and method of making same |
KR100718188B1 (ko) * | 2004-05-07 | 2007-05-15 | 삼성코닝 주식회사 | 비극성 a면 질화물 반도체 단결정 기판 및 이의 제조방법 |
JP2006086371A (ja) * | 2004-09-16 | 2006-03-30 | Kyocera Corp | 半導体成長用基板および半導体装置 |
-
2005
- 2005-10-19 KR KR1020050098379A patent/KR20070042594A/ko not_active Application Discontinuation
-
2006
- 2006-10-12 JP JP2006278259A patent/JP4914167B2/ja not_active Expired - Fee Related
- 2006-10-16 EP EP06122314A patent/EP1777325A3/en not_active Withdrawn
- 2006-10-17 US US11/581,339 patent/US20070085170A1/en not_active Abandoned
- 2006-10-18 CN CN2006101502763A patent/CN1958887B/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2016084767A1 (ja) * | 2014-11-27 | 2017-09-28 | 国立研究開発法人産業技術総合研究所 | 半導体用円形支持基板 |
Also Published As
Publication number | Publication date |
---|---|
CN1958887A (zh) | 2007-05-09 |
EP1777325A2 (en) | 2007-04-25 |
EP1777325A3 (en) | 2009-10-07 |
KR20070042594A (ko) | 2007-04-24 |
CN1958887B (zh) | 2012-03-14 |
US20070085170A1 (en) | 2007-04-19 |
JP2007116152A (ja) | 2007-05-10 |
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