CN1958887A - 具有定向平面的单晶a-平面氮化物半导体晶片 - Google Patents
具有定向平面的单晶a-平面氮化物半导体晶片 Download PDFInfo
- Publication number
- CN1958887A CN1958887A CNA2006101502763A CN200610150276A CN1958887A CN 1958887 A CN1958887 A CN 1958887A CN A2006101502763 A CNA2006101502763 A CN A2006101502763A CN 200610150276 A CN200610150276 A CN 200610150276A CN 1958887 A CN1958887 A CN 1958887A
- Authority
- CN
- China
- Prior art keywords
- plane
- monocrystalline
- nitride semiconductor
- semiconductor wafer
- orientation flat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050098379 | 2005-10-19 | ||
KR1020050098379A KR20070042594A (ko) | 2005-10-19 | 2005-10-19 | 편평한 측면을 갖는 a면 질화물 반도체 단결정 기판 |
KR10-2005-0098379 | 2005-10-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1958887A true CN1958887A (zh) | 2007-05-09 |
CN1958887B CN1958887B (zh) | 2012-03-14 |
Family
ID=37719259
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006101502763A Expired - Fee Related CN1958887B (zh) | 2005-10-19 | 2006-10-18 | 具有定向平面的单晶a-平面氮化物半导体晶片 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20070085170A1 (zh) |
EP (1) | EP1777325A3 (zh) |
JP (1) | JP4914167B2 (zh) |
KR (1) | KR20070042594A (zh) |
CN (1) | CN1958887B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106990126A (zh) * | 2017-04-25 | 2017-07-28 | 山东大学 | 一种偏向SiC晶体的大边、小边精确定向方法 |
CN110391585A (zh) * | 2018-04-18 | 2019-10-29 | 松下知识产权经营株式会社 | Iii族氮化物半导体基板及其制造方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4869179B2 (ja) * | 2007-08-10 | 2012-02-08 | 三洋電機株式会社 | 半導体基板およびその製造方法 |
JP4981602B2 (ja) * | 2007-09-25 | 2012-07-25 | パナソニック株式会社 | 窒化ガリウム基板の製造方法 |
JP5241855B2 (ja) | 2008-02-25 | 2013-07-17 | シックスポイント マテリアルズ, インコーポレイテッド | Iii族窒化物ウエハを製造する方法およびiii族窒化物ウエハ |
WO2009149299A1 (en) | 2008-06-04 | 2009-12-10 | Sixpoint Materials | Methods for producing improved crystallinty group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth |
JP5631746B2 (ja) | 2008-06-04 | 2014-11-26 | シックスポイント マテリアルズ, インコーポレイテッド | Iii族窒化物結晶を成長させるための高圧ベッセル、ならびに高圧ベッセルおよびiii族窒化物結晶を用いてiii族窒化物結晶を成長させる方法 |
JP2010067930A (ja) * | 2008-09-12 | 2010-03-25 | Toshiba Corp | 半導体装置およびその製造方法 |
WO2016084767A1 (ja) * | 2014-11-27 | 2016-06-02 | 国立研究開発法人産業技術総合研究所 | 半導体用円形支持基板 |
JP7549322B2 (ja) * | 2020-04-01 | 2024-09-11 | 株式会社ノベルクリスタルテクノロジー | 半導体基板及びその製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2676806B2 (ja) | 1988-08-23 | 1997-11-17 | 富士通株式会社 | メモリ保護方式 |
JP3935977B2 (ja) * | 1995-05-16 | 2007-06-27 | Sumco Techxiv株式会社 | ノッチ付き半導体ウェーハ |
US6809010B1 (en) * | 1996-02-29 | 2004-10-26 | Kyocera Corporation | Sapphire single crystal, semiconductor laser diode using the same for substrate, and method for manufacturing the same |
JP2882355B2 (ja) | 1996-04-10 | 1999-04-12 | 住友電気工業株式会社 | Iii −v族化合物半導体ウエハ及びその製造方法 |
JP3164016B2 (ja) | 1996-05-31 | 2001-05-08 | 住友電気工業株式会社 | 発光素子および発光素子用ウエハの製造方法 |
CN1159750C (zh) | 1997-04-11 | 2004-07-28 | 日亚化学工业株式会社 | 氮化物半导体的生长方法 |
US6596079B1 (en) * | 2000-03-13 | 2003-07-22 | Advanced Technology Materials, Inc. | III-V nitride substrate boule and method of making and using the same |
JP2002222746A (ja) | 2001-01-23 | 2002-08-09 | Matsushita Electric Ind Co Ltd | 窒化物半導体ウェーハ及びその製造方法 |
JP2002356398A (ja) | 2001-06-01 | 2002-12-13 | Sumitomo Electric Ind Ltd | 窒化ガリウムウエハ |
KR100576223B1 (ko) * | 2002-10-01 | 2006-05-03 | 주식회사 엘지화학 | 폴리카보네이트 수지의 제조방법 |
AU2003256522A1 (en) | 2002-12-16 | 2004-07-29 | The Regents Of University Of California | Growth of planar, non-polar a-plane gallium nitride by hydride vapor phase epitaxy |
US7427555B2 (en) * | 2002-12-16 | 2008-09-23 | The Regents Of The University Of California | Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy |
US7098487B2 (en) * | 2002-12-27 | 2006-08-29 | General Electric Company | Gallium nitride crystal and method of making same |
KR100718188B1 (ko) * | 2004-05-07 | 2007-05-15 | 삼성코닝 주식회사 | 비극성 a면 질화물 반도체 단결정 기판 및 이의 제조방법 |
JP2006086371A (ja) * | 2004-09-16 | 2006-03-30 | Kyocera Corp | 半導体成長用基板および半導体装置 |
-
2005
- 2005-10-19 KR KR1020050098379A patent/KR20070042594A/ko not_active Application Discontinuation
-
2006
- 2006-10-12 JP JP2006278259A patent/JP4914167B2/ja not_active Expired - Fee Related
- 2006-10-16 EP EP06122314A patent/EP1777325A3/en not_active Withdrawn
- 2006-10-17 US US11/581,339 patent/US20070085170A1/en not_active Abandoned
- 2006-10-18 CN CN2006101502763A patent/CN1958887B/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106990126A (zh) * | 2017-04-25 | 2017-07-28 | 山东大学 | 一种偏向SiC晶体的大边、小边精确定向方法 |
CN106990126B (zh) * | 2017-04-25 | 2019-08-09 | 山东大学 | 一种偏向SiC晶体的大边、小边精确定向方法 |
CN110391585A (zh) * | 2018-04-18 | 2019-10-29 | 松下知识产权经营株式会社 | Iii族氮化物半导体基板及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20070085170A1 (en) | 2007-04-19 |
JP4914167B2 (ja) | 2012-04-11 |
KR20070042594A (ko) | 2007-04-24 |
JP2007116152A (ja) | 2007-05-10 |
EP1777325A3 (en) | 2009-10-07 |
CN1958887B (zh) | 2012-03-14 |
EP1777325A2 (en) | 2007-04-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG CORNING PRECISION GLASS CO., LTD. Free format text: FORMER OWNER: SAMSUNG CORNING CO., LTD. Effective date: 20080613 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20080613 Address after: South Korea Gyeongbuk Gumi Applicant after: Samsung Corning Precision Materials Co.,Ltd. Address before: Gyeonggi Do Korea Suwon Applicant before: Samsung Corning Co., Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: KANGNING PRECISION MATERIAL CO., LTD. Free format text: FORMER NAME: SAMSUNG CORNING PRECISION MATERIALS CO., LTD. |
|
CP03 | Change of name, title or address |
Address after: Chungnam, South Korea Patentee after: Corning Precision Materials Co.,Ltd. Address before: South Korea Gyeongbuk Gumi Patentee before: Samsung Corning Precision Materials Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120314 Termination date: 20191018 |