WO2012086335A1 - C粒子が分散したFe-Pt系スパッタリングターゲット - Google Patents
C粒子が分散したFe-Pt系スパッタリングターゲット Download PDFInfo
- Publication number
- WO2012086335A1 WO2012086335A1 PCT/JP2011/076147 JP2011076147W WO2012086335A1 WO 2012086335 A1 WO2012086335 A1 WO 2012086335A1 JP 2011076147 W JP2011076147 W JP 2011076147W WO 2012086335 A1 WO2012086335 A1 WO 2012086335A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- powder
- sputtering
- particles
- sputtering target
- holding
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C33/00—Making ferrous alloys
- C22C33/02—Making ferrous alloys by powder metallurgy
- C22C33/0207—Using a mixture of prealloyed powders or a master alloy
- C22C33/0228—Using a mixture of prealloyed powders or a master alloy comprising other non-metallic compounds or more than 5% of graphite
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
Definitions
- the present invention relates to a sputtering target used for forming a granular magnetic thin film on a magnetic recording medium, and relates to an Fe—Pt sputtering target in which C particles are dispersed.
- materials based on Co, Fe, or Ni which are ferromagnetic metals, are used as materials for magnetic thin films in magnetic recording media.
- a Co—Cr-based or Co—Cr—Pt-based ferromagnetic alloy containing Co as a main component has been used for a magnetic thin film of a hard disk employing an in-plane magnetic recording method.
- hard magnetic thin films employing perpendicular magnetic recording that have been put into practical use in recent years often use a composite material composed of Co—Cr—Pt-based ferromagnetic alloy mainly composed of Co and non-magnetic inorganic particles. It has been.
- the above-mentioned magnetic thin film is often produced by sputtering a sputtering target containing the above material as a component with a DC magnetron sputtering apparatus because of its high productivity.
- FePt phase having an L1 0 structure is attracting attention as a material for an ultra-high density recording medium.
- the L1 0 FePt phase is expected to be a material suitable for application as a magnetic recording medium because it has high crystal magnetic anisotropy and excellent corrosion resistance and oxidation resistance.
- the FePt phase is used as a material for an ultra-high density recording medium, it is necessary to develop a technique for aligning and dispersing the ordered FePt magnetic particles in as high a density as possible in a magnetically isolated state. It has been.
- a granular structure magnetic thin film of FePt magnetic particles are isolated by a non-magnetic material such oxides or carbon having an L1 0 structure, as for a magnetic recording medium of the next generation hard disk employing a thermally assisted magnetic recording method Proposed.
- This granular structure magnetic thin film has a structure in which magnetic particles are magnetically insulated by interposition of a nonmagnetic substance.
- Patent Document 1, Patent Document 2, Patent Document 3, Patent Document 4, and Patent Document 5 can be cited as magnetic recording media having a magnetic thin film having a granular structure and related documents.
- a magnetic thin film having the L1 0 FePt phase As the granular structure magnetic thin film having the L1 0 FePt phase, a magnetic thin film containing 10 to 50% by volume of C as a nonmagnetic substance has attracted particular attention because of its high magnetic properties. It is known that such a granular structure magnetic thin film is produced by simultaneously sputtering an Fe target, a Pt target, and a C target, or by simultaneously sputtering an Fe—Pt alloy target and a C target. However, in order to simultaneously sputter these sputtering targets, an expensive simultaneous sputtering apparatus is required.
- An object of the present invention is to provide an Fe—Pt-based sputtering target in which C particles are dispersed, which makes it possible to produce a granular-structure magnetic thin film without using an expensive simultaneous sputtering apparatus. It is an object to provide a high-density sputtering target in which the amount of particles to be reduced is reduced.
- the present inventors have conducted intensive research. As a result, it is possible to produce a high-density sputtering target by finely and uniformly dispersing C particles, which are nonmagnetic materials, in the base metal. I found.
- the sputtering target made in this way can greatly reduce particle generation. That is, it was found that the yield during film formation can be improved.
- the composition ratio in terms of the number of atoms is represented by the formula: (Fe 100-X -Pt X ) 100-A -C A (where A is a number satisfying 20 ⁇ A ⁇ 50 and X is 35 ⁇ X ⁇ 55)
- a sputtering target characterized by having C particles finely dispersed in an alloy and having a relative density of 90% or more.
- composition ratio in the number of atoms is represented by the formula: (Fe 100-X—Y— Pt X —Cu Y ) 100-A —C A (where A is 20 ⁇ A ⁇ 50, X is 35 ⁇ X ⁇ 55, and Y is 0.5 ⁇ Y ⁇ 15)
- a sputtering target characterized in that it has C particles finely dispersed in the alloy and has a relative density of 90% or more.
- the Fe—Pt sputtering target in which C particles are dispersed according to the present invention enables the formation of a granular structure magnetic thin film without using an expensive simultaneous sputtering apparatus, and further reduces the amount of particles generated during sputtering. It has an excellent effect of providing a high-density sputtering target.
- the Fe—Pt-based sputtering target in which C particles of the present invention are dispersed has a compositional ratio in terms of the number of atoms: (Fe 100-X -Pt X ) 100-A -C A (where A is 20 ⁇ A ⁇ 50, X is a number satisfying 35 ⁇ X ⁇ 55), and the nonmagnetic C particles are uniformly finely dispersed in the ferromagnetic base material alloy, and the relative density is 90% or more. This is the basis of the present invention.
- the content of C particles is preferably 20 or more and 50 or less in the sputtering target composition. If the content of the C particles in the target composition is less than 20 atomic ratio, good magnetic properties may not be obtained. If the content exceeds 50 atomic ratios, the C particles aggregate and generation of particles occurs. May increase.
- the Pt content is preferably 35 or more and 55 or less in the Fe—Pt alloy composition. If the content of Pt in the Fe—Pt alloy is less than 35 atomic ratio, good magnetic characteristics may not be obtained. Even if the content exceeds 55 atomic ratio, similarly, good magnetic characteristics are obtained. It may not be obtained.
- the relative density of 90% or more is an important requirement of the present invention.
- the relative density is high, there are few problems due to degassing from the sputtering target at the time of sputtering, and adhesion between the alloy and the C particles is improved, so that generation of particles can be effectively suppressed.
- the relative density is 95% or more.
- the relative density is a value obtained by dividing the actually measured density of the target by the calculated density (also called the theoretical density).
- the calculation density is a density when it is assumed that the constituent components of the target are mixed without diffusing or reacting with each other, and is calculated by the following equation.
- Calculation density Sigma ⁇ (Molecular weight of constituent component x Ratio of number of constituent molecules) / ⁇ (Molecular weight of constituent component x Ratio of molecular numbers of constituent component / Document value density of constituent component)
- ⁇ means taking the sum of all the constituent components of the target.
- the sputtering target of the present invention can use a ferromagnetic Fe—Pt—Cu alloy as a base material alloy. That is, the composition ratio in terms of the number of atoms is represented by the formula: (Fe 100-XY -Pt X -Cu Y ) 100-A -C A (where A is 20 ⁇ A ⁇ 50, X is 35 ⁇ X ⁇ 55, Y Is a number satisfying 0.5 ⁇ Y ⁇ 15), and nonmagnetic C particles are uniformly finely dispersed in the base alloy, and the relative density is 90% or more.
- the Pt content in the Fe—Pt—Cu alloy composition is preferably not less than 35 and not more than 55 atomic ratio. If the content of Pt in the Fe—Pt—Cu alloy is less than 35 atomic ratio and exceeds 55 atomic ratio, good magnetic properties may not be obtained. Further, the content of Cu is preferably 0.5 atomic ratio or more and 15 atomic ratio or less in the Fe—Pt—Cu alloy composition. If the content of Fe-Pt-Cu alloy of Cu is less than 0.5 atomic ratio, it can not be sufficiently reduced heat treatment temperature when the granular structure magnetic thin film formed L1 0 structure If the ratio is more than 15 atoms, good magnetic properties may not be obtained.
- the sputtering target of the present invention it is particularly effective to disperse C particles having an average area of 4 ⁇ m 2 or less in the alloy.
- the average area exceeds 4 ⁇ m 2 , the produced sputtering target cannot effectively suppress the generation of particles during sputtering.
- an average area is derived
- the sputtering target of the present invention uses C particles made of graphite. This is because the sputtering target produced when the C particles are in the form of graphite can further effectively suppress the generation of particles.
- the sputtering target of the present invention has an oxygen concentration of 600 wtppm or less, more preferably 500 wtppm or less. This is because, in the magnetic thin film produced by sputtering the sputtering target of the present invention, the amount of oxygen in the Fe—Pt magnetic particles is reduced, so that the produced magnetic thin film can obtain good magnetic properties. It is.
- the sputtering target of the present invention can contain 20 mol% or less of an oxide of one or more elements selected from B, Mg, Al, Si, Ti, Cr, Zr, Nb, and Ta as additive components.
- the magnetic thin film produced by sputtering the sputtering target of the present invention has a structure in which the oxide and C are insulated from the magnetic interaction between the magnetic particles. This is because characteristics can be obtained.
- the oxide is finely dispersed in the alloy as in the case of C.
- the lower limit of the addition amount is preferably 1 mol%. It is because there is no effect of addition as it is less than this lower limit.
- the sputtering target of the present invention is produced by a powder sintering method.
- each raw material powder Fe powder, Pt powder, Cu powder, C powder, oxide powder
- These powders desirably have a particle size of 0.5 ⁇ m or more and 10 ⁇ m or less. If the particle size of the raw material powder is too small, there is a problem that the raw material powder is likely to aggregate. On the other hand, if the particle size of the raw material powder is large, it becomes more difficult to finely disperse the C particles in the alloy.
- alloy powders Fe—Pt powder, Fe—Cu powder, Pt—Cu powder, Fe—Pt—Cu powder
- an alloy powder containing Pt is effective for reducing the amount of oxygen in the raw material powder, although it depends on its composition. Also when using an alloy powder, it is desirable to use a powder having a particle size of 0.5 to 10 ⁇ m.
- the above-mentioned powder is weighed so as to have a desired composition, and mixed by using a known method such as a ball mill for pulverization.
- the mixed powder thus obtained is molded and sintered with a hot press.
- a plasma discharge sintering method or a hot isostatic pressing method can also be used.
- the holding temperature at the time of sintering depends on the composition of the sputtering target, but in most cases, it is in the temperature range of 1200 to 1400 ° C.
- isotropic hot pressing is performed on the sintered body taken out from the hot press.
- Isotropic hot pressing is effective in improving the density of the sintered body.
- the holding temperature during the isotropic hot pressing depends on the composition of the sintered body, but is in the temperature range of 1200 to 1400 ° C. Further, the pressure is set to 100 Mpa or more.
- an Fe—Pt sputtering target in which C particles are uniformly finely dispersed in an alloy and high-density C particles are dispersed can be produced.
- the sputtering target of the present invention produced as described above is useful as a sputtering target used for forming a granular structure magnetic thin film.
- Example 1 Fe powder having an average particle diameter of 3 ⁇ m, Pt powder having an average particle diameter of 3 ⁇ m, and C powder having an average particle diameter of 1 ⁇ m were prepared as raw material powders. Commercially available amorphous carbon was used as C powder. These powders were weighed in the following atomic ratio so that the total weight would be 2600 g. Atomic ratio: (Fe 50 -Pt 50 ) 60 -C 40
- the weighed powder was enclosed in a ball mill pot having a capacity of 10 liters together with zirconia balls as a grinding medium, and mixed and pulverized by rotating for 4 hours.
- the mixed powder taken out from the ball mill was filled in a carbon mold and hot-pressed.
- the hot pressing conditions were a vacuum atmosphere, a temperature rising rate of 300 ° C./hour, a holding temperature of 1200 ° C., and a holding time of 2 hours, and pressurization was performed at 30 MPa from the start of temperature rising to the end of holding. After completion of the holding, it was naturally cooled in the chamber. Next, hot isostatic pressing was performed on the sintered body taken out from the hot press mold.
- the conditions for hot isostatic pressing were a temperature increase rate of 300 ° C./hour, a holding temperature of 1350 ° C., a holding time of 2 hours, and gradually increasing the Ar gas pressure from the start of the temperature increase to 1350 ° C. During holding, pressure was applied at 150 MPa. After completion of the holding, it was naturally cooled in the furnace. The density of the sintered body thus produced was measured by the Archimedes method, and the relative density was calculated to be 96.6%.
- the edge part of the obtained sintered compact was cut out, the cross section was grind
- tissue images were taken at a field size of 108 ⁇ m ⁇ 80 ⁇ m at four arbitrarily selected locations on the tissue surface.
- the photographed image was binarized with image processing software, and the number and area of the portion corresponding to the C particles (the black portion of the tissue observation image) were obtained.
- the average area per C particle was calculated, it was 2.9 ⁇ m 2 .
- the oxygen content in a sintered compact was measured using the mill ends, it was 560 wtppm.
- the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm with a lathe, and then attached to a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva) and subjected to sputtering.
- the sputtering conditions were an input power of 1 kW and an Ar gas pressure of 1.7 Pa.
- a film was formed on a 4-inch diameter silicon substrate for 20 seconds. The number of particles adhering to the substrate was measured with a particle counter. At this time, the number of particles was 410.
- the weighed powder was enclosed in a ball mill pot having a capacity of 10 liters together with zirconia balls as a grinding medium, and mixed and pulverized by rotating for 4 hours.
- the mixed powder taken out from the ball mill was filled in a carbon mold and hot-pressed.
- the hot pressing conditions were a vacuum atmosphere, a temperature rising rate of 300 ° C./hour, a holding temperature of 1200 ° C., and a holding time of 2 hours, and pressurization was performed at 30 MPa from the start of temperature rising to the end of holding. After completion of the holding, it was naturally cooled in the chamber.
- the density of the sintered body thus produced was measured by the Archimedes method, and the relative density was calculated to be 83.6%.
- the edge part of the obtained sintered compact was cut out, the cross section was grind
- tissue images were taken at a field size of 108 ⁇ m ⁇ 80 ⁇ m at four arbitrarily selected locations on the tissue surface.
- the photographed image was binarized with image processing software, and the number and area of the portion corresponding to the C particles (the black portion of the tissue observation image) were obtained.
- the average area per C particle was calculated, it was 2.7 ⁇ m 2 .
- the oxygen content in a sintered compact was measured using the mill ends, it was 620 wtppm.
- the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm with a lathe, and then attached to a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva) and subjected to sputtering.
- the sputtering conditions were an input power of 1 kW and an Ar gas pressure of 1.7 Pa.
- a film was formed on a 4-inch diameter silicon substrate for 20 seconds. The number of particles adhering to the substrate was measured with a particle counter. The number at this time was 9640.
- the weighed powder was enclosed in a ball mill pot having a capacity of 10 liters together with zirconia balls as a grinding medium, and mixed and pulverized by rotating for 4 hours.
- the mixed powder taken out from the ball mill was filled in a carbon mold and hot-pressed.
- the hot pressing conditions were a vacuum atmosphere, a temperature rising rate of 300 ° C./hour, a holding temperature of 1200 ° C., and a holding time of 2 hours, and pressurization was performed at 30 MPa from the start of temperature rising to the end of holding. After completion of the holding, it was naturally cooled in the chamber. Next, hot isostatic pressing was performed on the sintered body taken out from the hot press mold.
- the conditions for hot isostatic pressing were a temperature increase rate of 300 ° C./hour, a holding temperature of 1350 ° C., a holding time of 2 hours, and gradually increasing the Ar gas pressure from the start of the temperature increase to 1350 ° C. During holding, pressure was applied at 150 MPa. After completion of the holding, it was naturally cooled in the furnace. The density of the sintered body thus produced was measured by the Archimedes method, and the relative density was calculated to be 87.8%.
- the edge part of the obtained sintered compact was cut out, the cross section was grind
- tissue images were taken at a field size of 108 ⁇ m ⁇ 80 ⁇ m at four arbitrarily selected locations on the tissue surface.
- the photographed image was binarized with image processing software, and the number and area of the portion corresponding to the C particles (the black portion of the tissue observation image) were obtained.
- the average area per C particle was calculated, it was 6.2 ⁇ m 2 .
- the oxygen content in a sintered compact was measured using the mill ends, it was 820 wtppm.
- the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm with a lathe, and then attached to a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva) and subjected to sputtering.
- the sputtering conditions were an input power of 1 kW and an Ar gas pressure of 1.7 Pa.
- a film was formed on a 4-inch diameter silicon substrate for 20 seconds. The number of particles adhering to the substrate was measured with a particle counter. The number at this time was 20000 or more.
- Example 2 Fe powder having an average particle diameter of 3 ⁇ m, Pt powder having an average particle diameter of 3 ⁇ m, Cu powder having an average particle diameter of 3 ⁇ m, and C powder having an average particle diameter of 1 ⁇ m were prepared as raw material powders. Commercially available amorphous carbon was used as C powder. These powders were weighed in the following atomic ratio so that the total weight would be 2380 g. Atomic ratio: (Fe 40 -Pt 45 -Cu 15 ) 55 -C 45
- the weighed powder was enclosed in a ball mill pot having a capacity of 10 liters together with zirconia balls as a grinding medium, and mixed and pulverized by rotating for 4 hours.
- the mixed powder taken out from the ball mill was filled in a carbon mold and hot-pressed.
- the hot pressing conditions were a vacuum atmosphere, a temperature rising rate of 300 ° C./hour, a holding temperature of 1200 ° C., and a holding time of 2 hours, and pressurization was performed at 30 MPa from the start of temperature rising to the end of holding. After completion of the holding, it was naturally cooled in the chamber. Next, hot isostatic pressing was performed on the sintered body taken out from the hot press mold.
- the conditions for hot isostatic pressing were a temperature increase rate of 300 ° C./hour, a holding temperature of 1350 ° C., a holding time of 2 hours, and gradually increasing the Ar gas pressure from the start of the temperature increase to 1350 ° C. During holding, pressure was applied at 150 MPa. After completion of the holding, it was naturally cooled in the furnace. The density of the sintered body thus produced was measured by the Archimedes method, and the relative density was calculated to be 95.8%.
- the edge part of the obtained sintered compact was cut out, the cross section was grind
- tissue images were taken at a field size of 108 ⁇ m ⁇ 80 ⁇ m at four arbitrarily selected locations on the tissue surface.
- the photographed image was binarized with image processing software, and the number and area of the portion corresponding to the C particles (the black portion of the tissue observation image) were obtained.
- the average area per C particle was calculated, it was 2.7 ⁇ m 2 .
- oxygen content in a sintered compact was measured using the mill ends, it was 540 wtppm.
- the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm with a lathe, and then attached to a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva) and subjected to sputtering.
- the sputtering conditions were an input power of 1 kW and an Ar gas pressure of 1.7 Pa.
- a film was formed on a 4-inch diameter silicon substrate for 20 seconds. The number of particles adhering to the substrate was measured with a particle counter. The number at this time was 320.
- the weighed powder was enclosed in a ball mill pot having a capacity of 10 liters together with zirconia balls as a grinding medium, and mixed and pulverized by rotating for 4 hours.
- the mixed powder taken out from the ball mill was filled in a carbon mold and hot-pressed.
- the hot pressing conditions were a vacuum atmosphere, a temperature rising rate of 300 ° C./hour, a holding temperature of 1200 ° C., and a holding time of 2 hours, and pressurization was performed at 30 MPa from the start of temperature rising to the end of holding. After completion of the holding, it was naturally cooled in the chamber.
- the density of the sintered body thus produced was measured by the Archimedes method, and the relative density was calculated to be 85.7%.
- the edge part of the obtained sintered compact was cut out, the cross section was grind
- tissue images were taken at a field size of 108 ⁇ m ⁇ 80 ⁇ m at four arbitrarily selected locations on the tissue surface.
- the photographed image was binarized with image processing software, and the number and area of the portion corresponding to the C particles (the black portion of the tissue observation image) were obtained.
- the average area per C particle was calculated, it was 2.5 ⁇ m 2 .
- the oxygen content in a sintered compact was measured using the mill ends, it was 580 wtppm.
- the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm with a lathe, and then attached to a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva) and subjected to sputtering.
- the sputtering conditions were an input power of 1 kW and an Ar gas pressure of 1.7 Pa.
- a film was formed on a 4-inch diameter silicon substrate for 20 seconds. The number of particles adhering to the substrate was measured with a particle counter. The number at this time was 11210.
- Example 3 Fe powder having an average particle diameter of 3 ⁇ m, Pt powder having an average particle diameter of 3 ⁇ m, and C powder having an average particle diameter of 1 ⁇ m were prepared as raw material powders. Commercially available amorphous carbon was used as C powder. These powders were weighed in the following atomic ratio so that the total weight would be 2600 g. Atomic ratio: (Fe 50 -Pt 50 ) 60 -C 40
- the weighed powder was enclosed in a 10 liter ball mill pot together with zirconia balls as a grinding medium, and rotated and mixed for 16 hours.
- the mixed powder taken out from the ball mill was filled in a carbon mold and hot-pressed.
- the hot pressing conditions were a vacuum atmosphere, a temperature rising rate of 300 ° C./hour, a holding temperature of 1200 ° C., and a holding time of 2 hours, and pressurization was performed at 30 MPa from the start of temperature rising to the end of holding. After completion of the holding, it was naturally cooled in the chamber.
- hot isostatic pressing was performed on the sintered body taken out from the hot press mold.
- the conditions for hot isostatic pressing were a temperature increase rate of 300 ° C./hour, a holding temperature of 1350 ° C., a holding time of 2 hours, and gradually increasing the Ar gas pressure from the start of the temperature increase to 1350 ° C. During holding, pressure was applied at 150 MPa. After completion of the holding, it was naturally cooled in the furnace. The density of the sintered body thus produced was measured by the Archimedes method, and the relative density was calculated to be 96.9%.
- the edge part of the obtained sintered compact was cut out, the cross section was grind
- tissue images were taken at a field size of 108 ⁇ m ⁇ 80 ⁇ m at four arbitrarily selected locations on the tissue surface.
- the photographed image was binarized with image processing software, and the number and area of the portion corresponding to the C particles (the black portion of the tissue observation image) were obtained.
- the average area per C particle was calculated, it was 1.0 micrometer ⁇ 2 >.
- oxygen content in a sintered compact was measured using the mill ends, it was 870 wtppm.
- Fig. 1 shows a cross-sectional photomicrograph. As shown in FIG. 1, it can be seen that black particles of C particles are uniformly dispersed in the white alloy.
- the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm with a lathe, and then sputtering was performed on a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva).
- the sputtering conditions were an input power of 1 kW and an Ar gas pressure of 1.7 Pa.
- a film was formed on a 4-inch diameter silicon substrate for 20 seconds. The number of particles adhering to the substrate was measured with a particle counter. The number at this time was 230.
- Example 4 Fe powder having an average particle size of 3 ⁇ m, Pt powder having an average particle size of 3 ⁇ m, and C powder having an average particle size of 5 ⁇ m were prepared as raw material powders.
- As the C powder a graphite powder having a true specific gravity of 2.25 g / cc was used. These powders were weighed in the following atomic ratio so that the total weight would be 2600 g. Atomic ratio: (Fe 50 -Pt 50 ) 60 -C 40
- the weighed powder was enclosed in a ball mill pot having a capacity of 10 liters together with zirconia balls as a grinding medium, and mixed and pulverized by rotating for 4 hours.
- the mixed powder taken out from the ball mill was filled in a carbon mold and hot-pressed.
- the hot pressing conditions were a vacuum atmosphere, a temperature rising rate of 300 ° C./hour, a holding temperature of 1200 ° C., and a holding time of 2 hours, and pressurization was performed at 30 MPa from the start of temperature rising to the end of holding. After completion of the holding, it was naturally cooled in the chamber. Next, hot isostatic pressing was performed on the sintered body taken out from the hot press mold.
- the conditions for hot isostatic pressing were a temperature increase rate of 300 ° C./hour, a holding temperature of 1350 ° C., a holding time of 2 hours, and gradually increasing the Ar gas pressure from the start of the temperature increase to 1350 ° C. During holding, pressure was applied at 150 MPa. After completion of the holding, it was naturally cooled in the furnace. The density of the sintered body thus produced was measured by the Archimedes method, and the relative density was calculated to be 97.6%.
- the edge part of the obtained sintered compact was cut out, the cross section was grind
- tissue images were taken at a field size of 108 ⁇ m ⁇ 80 ⁇ m at four arbitrarily selected locations on the tissue surface.
- the photographed image was binarized with image processing software, and the number and area of the portion corresponding to the C particles (the black portion of the tissue observation image) were obtained.
- the average area per C particle was calculated, it was 3.2 ⁇ m 2 .
- the oxygen content in a sintered compact was measured using the mill ends, it was 600 wtppm.
- the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm with a lathe, and then attached to a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva) and subjected to sputtering.
- the sputtering conditions were an input power of 1 kW and an Ar gas pressure of 1.7 Pa.
- a film was formed on a 4-inch diameter silicon substrate for 20 seconds. The number of particles adhering to the substrate was measured with a particle counter. The number at this time was 170.
- Fe—Pt alloy powder having an average particle size of 10 ⁇ m and C powder having an average particle size of 1 ⁇ m were prepared as raw material powders.
- Commercially available amorphous carbon was used as C powder. These powders were weighed in the following atomic ratio so that the total weight would be 2600 g.
- the weighed powder was enclosed in a 10-liter ball mill pot together with zirconia balls as a grinding medium, and rotated and mixed and ground for 8 hours.
- the mixed powder taken out from the ball mill was filled in a carbon mold and hot-pressed.
- the hot pressing conditions were a vacuum atmosphere, a temperature rising rate of 300 ° C./hour, a holding temperature of 1200 ° C., and a holding time of 2 hours, and pressurization was performed at 30 MPa from the start of temperature rising to the end of holding. After completion of the holding, it was naturally cooled in the chamber.
- hot isostatic pressing was performed on the sintered body taken out from the hot press mold.
- the conditions for hot isostatic pressing were a temperature increase rate of 300 ° C./hour, a holding temperature of 1350 ° C., a holding time of 2 hours, and gradually increasing the Ar gas pressure from the start of the temperature increase to 1350 ° C. During holding, pressure was applied at 150 MPa. After completion of the holding, it was naturally cooled in the furnace. The density of the sintered body thus produced was measured by the Archimedes method, and the relative density was calculated to be 97.1%.
- the edge part of the obtained sintered compact was cut out, the cross section was grind
- tissue images were taken at a field size of 108 ⁇ m ⁇ 80 ⁇ m at four arbitrarily selected locations on the tissue surface.
- the photographed image was binarized with image processing software, and the number and area of the portion corresponding to the C particles (the black portion of the tissue observation image) were obtained.
- the average area per C particle was calculated, it was 2.6 ⁇ m 2 .
- the oxygen content in a sintered compact was measured using the mill ends, it was 280 wtppm.
- the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm with a lathe, and then sputtering was performed on a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva).
- the sputtering conditions were an input power of 1 kW and an Ar gas pressure of 1.7 Pa.
- a film was formed on a 4-inch diameter silicon substrate for 20 seconds. The number of particles adhering to the substrate was measured with a particle counter. The number at this time was 360.
- Example 6 Fe powder having an average particle diameter of 3 ⁇ m, Pt powder having an average particle diameter of 3 ⁇ m, C powder having an average particle diameter of 1 ⁇ m, and SiO 2 powder having an average particle diameter of 1 ⁇ m were prepared as raw material powders.
- As the C powder a graphite powder having a true specific gravity of 2.25 g / cc was used. These powders were weighed in the following atomic ratio so that the total weight would be 2600 g. Atomic ratio: (Fe 50 -Pt 50 ) 69 -C 10 -Si 7 -O 14
- the weighed powder was enclosed in a ball mill pot having a capacity of 10 liters together with zirconia balls as a grinding medium, and mixed and pulverized by rotating for 4 hours.
- the mixed powder taken out from the ball mill was filled in a carbon mold and hot-pressed.
- the hot pressing conditions were a vacuum atmosphere, a temperature rising rate of 300 ° C./hour, a holding temperature of 1200 ° C., and a holding time of 2 hours, and pressurization was performed at 30 MPa from the start of temperature rising to the end of holding. After completion of the holding, it was naturally cooled in the chamber. Next, hot isostatic pressing was performed on the sintered body taken out from the hot press mold.
- the conditions for hot isostatic pressing were a temperature increase rate of 300 ° C./hour, a holding temperature of 1200 ° C., a holding time of 2 hours, and gradually increasing the Ar gas pressure from the start of the temperature increase to 1200 ° C. During holding, pressure was applied at 150 MPa. After completion of the holding, it was naturally cooled in the furnace. The density of the sintered body thus produced was measured by the Archimedes method, and the relative density was calculated to be 98.6%.
- the edge part of the obtained sintered compact was cut out, the cross section was grind
- the element distribution on the polished surface was photographed at a field size of 80 ⁇ m ⁇ 80 ⁇ m at four arbitrarily selected locations on the tissue surface.
- the photographed elemental distribution image of C was binarized with image processing software, and the number and area of portions corresponding to C particles were obtained. Thus, when the average area per C particle was calculated, it was 2.5 ⁇ m 2 .
- the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm with a lathe, and then attached to a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva) and subjected to sputtering.
- the sputtering conditions were an input power of 1 kW and an Ar gas pressure of 1.7 Pa.
- a film was formed on a 4-inch diameter silicon substrate for 20 seconds. The number of particles adhering to the substrate was measured with a particle counter. The number of particles at this time was 120.
- the weighed powder was enclosed in a ball mill pot having a capacity of 10 liters together with zirconia balls as a grinding medium, and mixed and pulverized by rotating for 4 hours.
- the mixed powder taken out from the ball mill was filled in a carbon mold and hot-pressed.
- the hot pressing conditions were a vacuum atmosphere, a temperature rising rate of 300 ° C./hour, a holding temperature of 1200 ° C., and a holding time of 2 hours, and pressurization was performed at 30 MPa from the start of temperature rising to the end of holding. After completion of the holding, it was naturally cooled in the chamber. Next, hot isostatic pressing was performed on the sintered body taken out from the hot press mold.
- the conditions for hot isostatic pressing were a temperature increase rate of 300 ° C./hour, a holding temperature of 1200 ° C., a holding time of 2 hours, and gradually increasing the Ar gas pressure from the start of the temperature increase to 1200 ° C. During holding, pressure was applied at 150 MPa. After completion of the holding, it was naturally cooled in the furnace. The density of the sintered body thus produced was measured by the Archimedes method, and the relative density was calculated to be 98.1%.
- the edge part of the obtained sintered compact was cut out, the cross section was grind
- the element distribution on the polished surface was photographed at a field size of 80 ⁇ m ⁇ 80 ⁇ m at four arbitrarily selected locations on the tissue surface.
- the photographed elemental distribution image of C was binarized with image processing software, and the number and area of portions corresponding to C particles were obtained. Thus, when the average area per C particle was calculated, it was 11.5 ⁇ m 2 .
- the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm with a lathe, and then attached to a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva) and subjected to sputtering.
- the sputtering conditions were an input power of 1 kW and an Ar gas pressure of 1.7 Pa.
- a film was formed on a 4-inch diameter silicon substrate for 20 seconds. The number of particles adhering to the substrate was measured with a particle counter. The number of particles at this time was 510.
- Example 7 Fe powder having an average particle diameter of 3 ⁇ m, Pt powder having an average particle diameter of 3 ⁇ m, Cu powder having an average particle diameter of 3 ⁇ m, C powder having an average particle diameter of 1 ⁇ m, and MgO powder having an average particle diameter of 2 ⁇ m were prepared as raw material powders.
- As the C powder a graphite powder having a true specific gravity of 2.25 g / cc was used. These powders were weighed in the following atomic ratio so that the total weight was 2500 g. Atomic ratio: (Fe 45 -Pt 45 -Cu 10 ) 64 -C 18 -Mg 9 -O 9
- the weighed powder was enclosed in a ball mill pot having a capacity of 10 liters together with zirconia balls as a grinding medium, and mixed and pulverized by rotating for 4 hours.
- the mixed powder taken out from the ball mill was filled in a carbon mold and hot-pressed.
- the hot pressing conditions were a vacuum atmosphere, a temperature rising rate of 300 ° C./hour, a holding temperature of 1250 ° C., and a holding time of 2 hours, and the pressure was increased from 30 MPa to the end of holding. After completion of the holding, it was naturally cooled in the chamber.
- hot isostatic pressing was performed on the sintered body taken out from the hot press mold.
- the conditions for hot isostatic pressing were a temperature increase rate of 300 ° C./hour, a holding temperature of 1250 ° C., a holding time of 2 hours, and gradually increasing the Ar gas pressure from the start of the temperature increase to 1250 ° C. During holding, pressure was applied at 150 MPa. After completion of the holding, it was naturally cooled in the furnace. The density of the sintered body thus produced was measured by the Archimedes method, and the relative density was calculated to be 98.2%.
- the edge part of the obtained sintered compact was cut out, the cross section was grind
- the element distribution on the polished surface was photographed at a field size of 80 ⁇ m ⁇ 80 ⁇ m at four arbitrarily selected locations on the tissue surface.
- the photographed elemental distribution image of C was binarized with image processing software, and the number and area of portions corresponding to C particles were obtained. Thus, when the average area per C particle was calculated, it was 2.6 ⁇ m 2 .
- the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm with a lathe, and then attached to a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva) and subjected to sputtering.
- the sputtering conditions were an input power of 1 kW and an Ar gas pressure of 1.7 Pa.
- a film was formed on a 4-inch diameter silicon substrate for 20 seconds.
- the number of particles adhering to the substrate was measured with a particle counter. At this time, the number of particles was 320.
- Example 8 Fe powder having an average particle diameter of 3 ⁇ m, Pt powder having an average particle diameter of 3 ⁇ m, C powder having an average particle diameter of 1 ⁇ m, and Cr 2 O 3 powder having an average particle diameter of 3 ⁇ m were prepared as raw material powders.
- As the C powder a graphite powder having a true specific gravity of 2.25 g / cc was used. These powders were weighed in the following atomic ratio so that the total weight would be 2600 g. Atomic ratio: (Fe 60 -Pt 40 ) 62.5 -C 16.67 -Cr 8.33 -O 12.50
- the weighed powder was enclosed in a ball mill pot having a capacity of 10 liters together with zirconia balls as a grinding medium, and mixed and pulverized by rotating for 4 hours.
- the mixed powder taken out from the ball mill was filled in a carbon mold and hot-pressed.
- the hot pressing conditions were a vacuum atmosphere, a temperature rising rate of 300 ° C./hour, a holding temperature of 1150 ° C., a holding time of 2 hours, and pressurization was performed at 30 MPa from the start of temperature rising to the end of holding. After completion of the holding, it was naturally cooled in the chamber.
- hot isostatic pressing was performed on the sintered body taken out from the hot press mold.
- the conditions for hot isostatic pressing were a heating rate of 300 ° C./hour, a holding temperature of 1150 ° C., a holding time of 2 hours, and gradually increasing the Ar gas pressure from the start of heating to 1150 ° C. During holding, pressure was applied at 150 MPa. After completion of the holding, it was naturally cooled in the furnace. The density of the sintered body thus produced was measured by the Archimedes method, and the relative density was calculated to be 96.7%.
- the edge part of the obtained sintered compact was cut out, the cross section was grind
- the element distribution on the polished surface was photographed at a field size of 80 ⁇ m ⁇ 80 ⁇ m at four arbitrarily selected locations on the tissue surface.
- the photographed elemental distribution image of C was binarized with image processing software, and the number and area of portions corresponding to C particles were obtained. Thus it was calculated the average area per C particles was 1.8 .mu.m 2.
- the sintered body was cut into a shape having a diameter of 180.0 mm and a thickness of 5.0 mm with a lathe, and then attached to a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva) and subjected to sputtering.
- the sputtering conditions were an input power of 1 kW and an Ar gas pressure of 1.7 Pa.
- a film was formed on a 4-inch diameter silicon substrate for 20 seconds. The number of particles adhering to the substrate was measured with a particle counter. At this time, the number of particles was 260.
- Table 1 summarizes the above results. As shown in Table 1, in any case, the examples of the sputtering target of the present invention maintain the high density of the sputtering target, and the number of particles generated during sputtering is 500 or less, which is always less than that of the comparative example. Results were obtained.
- the present invention makes it possible to form a granular magnetic thin film without using an expensive co-sputtering apparatus, and further, a high-density Fe-Pt system in which C particles are dispersed with a reduced amount of particles generated during sputtering. It has the outstanding effect which can provide a sputtering target. Therefore, it is useful as a sputtering target for forming a magnetic thin film having a granular structure.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
また、近年実用化された垂直磁気記録方式を採用するハードディスクの磁性薄膜には、Coを主成分とするCo-Cr-Pt系の強磁性合金と非磁性の無機物粒子からなる複合材料が多く用いられている。そして上記の磁性薄膜は、生産性の高さから、上記材料を成分とするスパッタリングターゲットをDCマグネトロンスパッタ装置でスパッタして作製されることが多い。
そしてFePt相を超高密度記録媒体用材料として使用する場合には、規則化したFePt磁性粒子を磁気的に孤立させた状態で出来るだけ高密度に方位をそろえて分散させるという技術の開発が求められている。
グラニュラー構造の磁性薄膜を有する磁気記録媒体及びこれに関連する公知文献としては、特許文献1、特許文献2、特許文献3、特許文献4、特許文献5を挙げることができる。
1)原子数における組成比が式:(Fe100-X-PtX)100-A-CA(但し、Aは20≦A≦50、Xは35≦X≦55を満たす数)で表される焼結体スパッタリングターゲットであって、合金中に微細分散したC粒子を有し、かつ相対密度が90%以上であることを特徴とするスパッタリングターゲット
2)原子数における組成比が式:(Fe100-X-Y-PtX-CuY)100-A-CA(但し、Aは20≦A≦50、Xは35≦X≦55、Yは0.5≦Y≦15を満たす数)で表される焼結体スパッタリングターゲットであって、合金中に微細分散したC粒子を有し、かつ相対密度が90%以上であることを特徴とするスパッタリングターゲット
3)スパッタリングターゲットの切断面における研磨組織で、C粒子の平均面積が4μm2以下であることを特徴とする上記1)~2)に記載のスパッタリングターゲット
4)Cがグラファイトであることを特徴とする上記1)~3)のいずれかに記載のスパッタリングターゲット
5)スパッタリングターゲット中の酸素含有量が600wtppm以下であることを特徴とする上記1)~4)のいずれかに記載のスパッタリングターゲット
6)添加成分としてB、Mg、Al、Si、Ti、Cr、Zr、Nb、Taから選択した1種以上の元素の酸化物を20mol%以下含み、該酸化物が合金中に分散した組織を有することを特徴とする上記1)~5)のいずれかに記載のスパッタリングターゲット、を提供する。
式:計算密度=シグマΣ(構成成分の分子量×構成成分の分子数比)/Σ(構成成分の分子量×構成成分の分子数比/構成成分の文献値密度)
ここで、Σは、ターゲットの構成成分の全てについて、和をとることを意味する。
また、Cuの含有量は、Fe-Pt-Cu合金組成中、好ましくは0.5原子数比以上15原子数比以下である。CuのFe-Pt-Cu合金中における含有量が、0.5原子数比未満であると、成膜したグラニュラー構造磁性薄膜をL10構造にするときの熱処理温度を十分に下げることができない場合があり、15原子数比超であると良好な磁気特性が得られない場合がある。
さらに原料粉末として、合金粉末(Fe-Pt粉、Fe-Cu粉、Pt-Cu粉、Fe-Pt-Cu粉)を用いてもよい。特にPtを含む合金粉末はその組成にもよるが、原料粉末中の酸素量を少なくするために有効である。合金粉末を用いる場合も、粒径が0.5μm以上10μm以下のものを用いることが望ましい。
このようにして得られた焼結体を旋盤で所望の形状に加工することにより、本発明のスパッタリングターゲットは作製できる。
原料粉末として平均粒径3μmのFe粉末、平均粒径3μmのPt粉末、平均粒径1μmのC粉末を用意した。C粉末は市販の無定形炭素を用いた。
これらの粉末を以下の原子数比で、合計重量が2600gとなるように秤量した。
原子数比:(Fe50-Pt50)60-C40
ホットプレスの条件は、真空雰囲気、昇温速度300°C/時間、保持温度1200°C、保持時間2時間とし、昇温開始時から保持終了まで30MPaで加圧した。保持終了後はチャンバー内でそのまま自然冷却させた。
次にホットプレスの型から取り出した焼結体に熱間等方加圧加工を施した。熱間等方加圧加工の条件は、昇温速度300°C/時間、保持温度1350°C、保持時間2時間とし、昇温開始時からArガスのガス圧を徐々に高めて、1350℃保持中は150MPaで加圧した。保持終了後は炉内でそのまま自然冷却させた。
こうして作製された焼結体の密度をアルキメデス法で測定し、相対密度を計算したところ96.6%であった。
スパッタリングの条件は、投入電力1kW、Arガス圧1.7Paとし、2kWhrのプレスパッタリングを実施した後、4インチ径のシリコン基板上に20秒間成膜した。そして基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。このときのパーティクル個数は410個であった。
原料粉末として平均粒径3μmのFe粉末、平均粒径3μmのPt粉末、平均粒径1μmのC粉末を用意した。C粉末は市販の無定形炭素を用いた。
これらの粉末を以下の原子数比で、合計重量が2600gとなるように秤量した。
原子数比:(Fe50-Pt50)60-C40
ホットプレスの条件は、真空雰囲気、昇温速度300°C/時間、保持温度1200°C、保持時間2時間とし、昇温開始時から保持終了まで30MPaで加圧した。保持終了後はチャンバー内でそのまま自然冷却させた。
こうして作製された焼結体の密度をアルキメデス法で測定し、相対密度を計算したところ83.6%であった。
スパッタリングの条件は、投入電力1kW、Arガス圧1.7Paとし、2kWhrのプレスパッタリングを実施した後、4インチ径のシリコン基板上に20秒間成膜した。そして基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。このときの個数は9640個であった。
原料粉末として平均粒径3μmのFe粉末、平均粒径3μmのPt粉末、平均粒径1μmのC粉末を用意した。C粉末は市販の無定形炭素を用いた。
これらの粉末を以下の原子数比で、合計重量が2050gとなるように秤量した。
原子数比:(Fe50-Pt50)40-C60
ホットプレスの条件は、真空雰囲気、昇温速度300°C/時間、保持温度1200°C、保持時間2時間とし、昇温開始時から保持終了まで30MPaで加圧した。保持終了後はチャンバー内でそのまま自然冷却させた。
次にホットプレスの型から取り出した焼結体に熱間等方加圧加工を施した。熱間等方加圧加工の条件は、昇温速度300°C/時間、保持温度1350°C、保持時間2時間とし、昇温開始時からArガスのガス圧を徐々に高めて、1350℃保持中は150MPaで加圧した。保持終了後は炉内でそのまま自然冷却させた。
こうして作製された焼結体の密度をアルキメデス法で測定し、相対密度を計算したところ87.8%であった。
スパッタリングの条件は、投入電力1kW、Arガス圧1.7Paとし、2kWhrのプレスパッタリングを実施した後、4インチ径のシリコン基板上に20秒間成膜した。そして基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。このときの個数は20000個以上であった。
原料粉末として平均粒径3μmのFe粉末、平均粒径3μmのPt粉末、平均粒径3μmのCu粉末、平均粒径1μmのC粉末を用意した。C粉末は市販の無定形炭素を用いた。
これらの粉末を以下の原子数比で、合計重量が2380gとなるように秤量した。
原子数比:(Fe40-Pt45-Cu15)55-C45
ホットプレスの条件は、真空雰囲気、昇温速度300°C/時間、保持温度1200°C、保持時間2時間とし、昇温開始時から保持終了まで30MPaで加圧した。保持終了後はチャンバー内でそのまま自然冷却させた。
次にホットプレスの型から取り出した焼結体に熱間等方加圧加工を施した。熱間等方加圧加工の条件は、昇温速度300°C/時間、保持温度1350°C、保持時間2時間とし、昇温開始時からArガスのガス圧を徐々に高めて、1350℃保持中は150MPaで加圧した。保持終了後は炉内でそのまま自然冷却させた。
こうして作製された焼結体の密度をアルキメデス法で測定し、相対密度を計算したところ95.8%であった。
スパッタリングの条件は、投入電力1kW、Arガス圧1.7Paとし、2kWhrのプレスパッタリングを実施した後、4インチ径のシリコン基板上に20秒間成膜した。そして基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。このときの個数は320個であった。
原料粉末として平均粒径3μmのFe粉末、平均粒径3μmのPt粉末、平均粒径3μmのCu粉末、平均粒径1μmのC粉末を用意した。C粉末は市販の無定形炭素を用いた。
これらの粉末を以下の原子数比で、合計重量が2380gとなるように秤量した。
原子数比:(Fe40-Pt45-Cu15)55-C45
ホットプレスの条件は、真空雰囲気、昇温速度300°C/時間、保持温度1200°C、保持時間2時間とし、昇温開始時から保持終了まで30MPaで加圧した。保持終了後はチャンバー内でそのまま自然冷却させた。
こうして作製された焼結体の密度をアルキメデス法で測定し、相対密度を計算したところ85.7%であった。
スパッタリングの条件は、投入電力1kW、Arガス圧1.7Paとし、2kWhrのプレスパッタリングを実施した後、4インチ径のシリコン基板上に20秒間成膜した。そして基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。このときの個数は11210個であった。
原料粉末として平均粒径3μmのFe粉末、平均粒径3μmのPt粉末、平均粒径1μmのC粉末を用意した。C粉末は市販の無定形炭素を用いた。
これらの粉末を以下の原子数比で、合計重量が2600gとなるように秤量した。
原子数比:(Fe50-Pt50)60-C40
ホットプレスの条件は、真空雰囲気、昇温速度300°C/時間、保持温度1200°C、保持時間2時間とし、昇温開始時から保持終了まで30MPaで加圧した。保持終了後はチャンバー内でそのまま自然冷却させた。
次にホットプレスの型から取り出した焼結体に熱間等方加圧加工を施した。熱間等方加圧加工の条件は、昇温速度300°C/時間、保持温度1350°C、保持時間2時間とし、昇温開始時からArガスのガス圧を徐々に高めて、1350℃保持中は150MPaで加圧した。保持終了後は炉内でそのまま自然冷却させた。
こうして作製された焼結体の密度をアルキメデス法で測定し、相対密度を計算したところ96.9%であった。
スパッタリングの条件は、投入電力1kW、Arガス圧1.7Paとし、2kWhrのプレスパッタリングを実施した後、4インチ径のシリコン基板上に20秒間成膜した。そして基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。このときの個数は230個であった。
原料粉末として平均粒径3μmのFe粉末、平均粒径3μmのPt粉末、平均粒径5μmのC粉末を用意した。C粉末は真比重が2.25g/ccのグラファイト粉末を用いた。
これらの粉末を以下の原子数比で、合計重量が2600gとなるように秤量した。
原子数比:(Fe50-Pt50)60-C40
ホットプレスの条件は、真空雰囲気、昇温速度300°C/時間、保持温度1200°C、保持時間2時間とし、昇温開始時から保持終了まで30MPaで加圧した。保持終了後はチャンバー内でそのまま自然冷却させた。
次にホットプレスの型から取り出した焼結体に熱間等方加圧加工を施した。熱間等方加圧加工の条件は、昇温速度300°C/時間、保持温度1350°C、保持時間2時間とし、昇温開始時からArガスのガス圧を徐々に高めて、1350℃保持中は150MPaで加圧した。保持終了後は炉内でそのまま自然冷却させた。
こうして作製された焼結体の密度をアルキメデス法で測定し、相対密度を計算したところ97.6%であった。
スパッタリングの条件は、投入電力1kW、Arガス圧1.7Paとし、2kWhrのプレスパッタリングを実施した後、4インチ径のシリコン基板上に20秒間成膜した。そして基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。このときの個数は170個であった。
原料粉末として平均粒径10μmのFe-Pt合金粉末、平均粒径1μmのC粉末を用意した。C粉末は市販の無定形炭素を用いた。
これらの粉末を以下の原子数比で、合計重量が2600gとなるように秤量した。
原子数比:(Fe50-Pt50)60-C40
ホットプレスの条件は、真空雰囲気、昇温速度300°C/時間、保持温度1200°C、保持時間2時間とし、昇温開始時から保持終了まで30MPaで加圧した。保持終了後はチャンバー内でそのまま自然冷却させた。
次にホットプレスの型から取り出した焼結体に熱間等方加圧加工を施した。熱間等方加圧加工の条件は、昇温速度300°C/時間、保持温度1350°C、保持時間2時間とし、昇温開始時からArガスのガス圧を徐々に高めて、1350℃保持中は150MPaで加圧した。保持終了後は炉内でそのまま自然冷却させた。
こうして作製された焼結体の密度をアルキメデス法で測定し、相対密度を計算したところ97.1%であった。
スパッタリングの条件は、投入電力1kW、Arガス圧1.7Paとし、2kWhrのプレスパッタリングを実施した後、4インチ径のシリコン基板上に20秒間成膜した。そして基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。このときの個数は360個であった。
原料粉末として平均粒径3μmのFe粉末、平均粒径3μmのPt粉末、平均粒径1μmのC粉末、平均粒径1μmのSiO2粉末を用意した。C粉末は真比重が2.25g/ccのグラファイト粉末を用いた。
これらの粉末を以下の原子数比で、合計重量が2600gとなるように秤量した。
原子数比:(Fe50-Pt50)69-C10-Si7-O14
ホットプレスの条件は、真空雰囲気、昇温速度300°C/時間、保持温度1200°C、保持時間2時間とし、昇温開始時から保持終了まで30MPaで加圧した。保持終了後はチャンバー内でそのまま自然冷却させた。
次にホットプレスの型から取り出した焼結体に熱間等方加圧加工を施した。熱間等方加圧加工の条件は、昇温速度300°C/時間、保持温度1200°C、保持時間2時間とし、昇温開始時からArガスのガス圧を徐々に高めて、1200℃保持中は150MPaで加圧した。保持終了後は炉内でそのまま自然冷却させた。
こうして作製された焼結体の密度をアルキメデス法で測定し、相対密度を計算したところ98.6%であった。
スパッタリングの条件は、投入電力1kW、Arガス圧1.7Paとし、2kWhrのプレスパッタリングを実施した後、4インチ径のシリコン基板上に20秒間成膜した。そして基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。このときのパーティクル個数は120個であった。
原料粉末として平均粒径3μmのFe粉末、平均粒径3μmのPt粉末、平均粒径20μmのC粉末、平均粒径1μmのSiO2粉末を用意した。C粉末は真比重が2.25g/ccのグラファイト粉末を用いた。
これらの粉末を以下の原子数比で、合計重量が2600gとなるように秤量した。
原子数比:(Fe50-Pt50)69-C10-Si7-O14
ホットプレスの条件は、真空雰囲気、昇温速度300°C/時間、保持温度1200°C、保持時間2時間とし、昇温開始時から保持終了まで30MPaで加圧した。保持終了後はチャンバー内でそのまま自然冷却させた。
次にホットプレスの型から取り出した焼結体に熱間等方加圧加工を施した。熱間等方加圧加工の条件は、昇温速度300°C/時間、保持温度1200°C、保持時間2時間とし、昇温開始時からArガスのガス圧を徐々に高めて、1200℃保持中は150MPaで加圧した。保持終了後は炉内でそのまま自然冷却させた。
こうして作製された焼結体の密度をアルキメデス法で測定し、相対密度を計算したところ98.1%であった。
スパッタリングの条件は、投入電力1kW、Arガス圧1.7Paとし、2kWhrのプレスパッタリングを実施した後、4インチ径のシリコン基板上に20秒間成膜した。そして基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。このときのパーティクル個数は510個であった。
原料粉末として平均粒径3μmのFe粉末、平均粒径3μmのPt粉末、平均粒径3μmのCu粉末、平均粒径1μmのC粉末、平均粒径2μmのMgO粉末を用意した。C粉末は真比重が2.25g/ccのグラファイト粉末を用いた。
これらの粉末を以下の原子数比で、合計重量が2500gとなるように秤量した。
原子数比:(Fe45-Pt45-Cu10)64-C18-Mg9-O9
ホットプレスの条件は、真空雰囲気、昇温速度300°C/時間、保持温度1250°C、保持時間2時間とし、昇温開始時から保持終了まで30MPaで加圧した。保持終了後はチャンバー内でそのまま自然冷却させた。
こうして作製された焼結体の密度をアルキメデス法で測定し、相対密度を計算したところ98.2%であった。
スパッタリングの条件は、投入電力1kW、Arガス圧1.7Paとし、2kWhrのプレスパッタリングを実施した後、4インチ径のシリコン基板上に20秒間成膜した。そして基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。このときのパーティクル個数は320個であった。
原料粉末として平均粒径3μmのFe粉末、平均粒径3μmのPt粉末、平均粒径1μmのC粉末、平均粒径3μmのCr2O3粉末を用意した。C粉末は真比重が2.25g/ccのグラファイト粉末を用いた。
これらの粉末を以下の原子数比で、合計重量が2600gとなるように秤量した。
原子数比:(Fe60-Pt40)62.5-C16.67-Cr8.33-O12.50
ホットプレスの条件は、真空雰囲気、昇温速度300°C/時間、保持温度1150°C、保持時間2時間とし、昇温開始時から保持終了まで30MPaで加圧した。保持終了後はチャンバー内でそのまま自然冷却させた。
こうして作製された焼結体の密度をアルキメデス法で測定し、相対密度を計算したところ96.7%であった。
スパッタリングの条件は、投入電力1kW、Arガス圧1.7Paとし、2kWhrのプレスパッタリングを実施した後、4インチ径のシリコン基板上に20秒間成膜した。そして基板上へ付着したパーティクルの個数をパーティクルカウンターで測定した。このときのパーティクル個数は260個であった。
Claims (6)
- 原子数における組成比が式:(Fe100-X-PtX)100-A-CA(但し、Aは20≦A≦50、Xは35≦X≦55を満たす数)で表される焼結体スパッタリングターゲットであって、合金中に微細分散したC粒子を有し、かつ相対密度が90%以上であることを特徴とするスパッタリングターゲット。
- 原子数における組成比が式:(Fe100-X-Y-PtX-CuY)100-A-CA(但し、Aは20≦A≦50、Xは35≦X≦55、Yは0.5≦Y≦15を満たす数)で表される焼結体スパッタリングターゲットであって、合金中に微細分散したC粒子を有し、かつ相対密度が90%以上であることを特徴とするスパッタリングターゲット。
- スパッタリングターゲットの切断面における研磨組織で、C粒子の平均面積が4μm2以下であることを特徴とする請求項1又は2に記載のスパッタリングターゲット。
- Cがグラファイトであることを特徴とする請求項1~3のいずれか一項に記載のスパッタリングターゲット。
- スパッタリングターゲット中の酸素含有量が600wtppm以下であることを特徴とする請求項1~4のいずれか一項に記載のスパッタリングターゲット。
- 添加成分としてB、Mg、Al、Si、Ti、Cr、Zr、Nb、Taから選択した1種以上の元素の酸化物を20mol%以下含み、該酸化物が合金中に分散した組織を有することを特徴とする請求項1~5のいずれか一項に記載のスパッタリングターゲット。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/880,135 US9945026B2 (en) | 2010-12-20 | 2011-11-14 | Fe-Pt-based sputtering target with dispersed C grains |
JP2012511850A JP5290468B2 (ja) | 2010-12-20 | 2011-11-14 | C粒子が分散したFe−Pt系スパッタリングターゲット |
SG2013024963A SG189255A1 (en) | 2010-12-20 | 2011-11-14 | Fe-pt-based sputtering target with dispersed c grains |
CN201180061229.0A CN103270554B (zh) | 2010-12-20 | 2011-11-14 | 分散有C粒子的Fe-Pt型溅射靶 |
US15/730,409 US20180044779A1 (en) | 2010-12-20 | 2017-10-11 | Fe-Pt-BASED SPUTTERING TARGET WITH DISPERSED C GRAINS |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010-283567 | 2010-12-20 | ||
JP2010283567 | 2010-12-20 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/880,135 A-371-Of-International US9945026B2 (en) | 2010-12-20 | 2011-11-14 | Fe-Pt-based sputtering target with dispersed C grains |
US15/730,409 Division US20180044779A1 (en) | 2010-12-20 | 2017-10-11 | Fe-Pt-BASED SPUTTERING TARGET WITH DISPERSED C GRAINS |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012086335A1 true WO2012086335A1 (ja) | 2012-06-28 |
Family
ID=46313617
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2011/076147 WO2012086335A1 (ja) | 2010-12-20 | 2011-11-14 | C粒子が分散したFe-Pt系スパッタリングターゲット |
Country Status (7)
Country | Link |
---|---|
US (2) | US9945026B2 (ja) |
JP (1) | JP5290468B2 (ja) |
CN (1) | CN103270554B (ja) |
MY (1) | MY164370A (ja) |
SG (1) | SG189255A1 (ja) |
TW (1) | TWI547579B (ja) |
WO (1) | WO2012086335A1 (ja) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012214874A (ja) * | 2011-03-30 | 2012-11-08 | Tanaka Kikinzoku Kogyo Kk | FePt−C系スパッタリングターゲット及びその製造方法 |
WO2013046882A1 (ja) * | 2011-09-26 | 2013-04-04 | Jx日鉱日石金属株式会社 | Fe-Pt-C系スパッタリングターゲット |
WO2013105648A1 (ja) * | 2012-01-13 | 2013-07-18 | 田中貴金属工業株式会社 | FePt系スパッタリングターゲット及びその製造方法 |
WO2014024519A1 (ja) * | 2012-08-10 | 2014-02-13 | 三井金属鉱業株式会社 | 焼結体およびスパッタリングターゲット |
JP2014041682A (ja) * | 2012-08-24 | 2014-03-06 | Mitsubishi Materials Corp | 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法 |
WO2014052344A1 (en) * | 2012-09-27 | 2014-04-03 | Seagate Technology Llc | Magnetic stack including tin-x intermediate layer |
JP5567227B1 (ja) * | 2012-09-21 | 2014-08-06 | Jx日鉱日石金属株式会社 | Fe−Pt系磁性材焼結体 |
WO2014141789A1 (ja) * | 2013-03-11 | 2014-09-18 | Jx日鉱日石金属株式会社 | 磁気記録膜形成用スパッタリングターゲット及び該ターゲットの製造に用いる炭素原料 |
WO2014175392A1 (ja) * | 2013-04-26 | 2014-10-30 | Jx日鉱日石金属株式会社 | 磁気記録膜用スパッタリングターゲット及びその製造に用いる炭素原料 |
WO2014196377A1 (ja) * | 2013-06-06 | 2014-12-11 | Jx日鉱日石金属株式会社 | 磁性記録媒体用スパッタリングターゲット |
US20150060268A1 (en) * | 2012-07-20 | 2015-03-05 | Jx Nippon Mining & Metals Corporation | Sputtering Target for forming Magnetic Recording Film and Process for Producing Same |
JP5689543B2 (ja) * | 2012-08-31 | 2015-03-25 | Jx日鉱日石金属株式会社 | Fe系磁性材焼結体 |
JP2016094671A (ja) * | 2011-03-30 | 2016-05-26 | 田中貴金属工業株式会社 | FePt−C系スパッタリングターゲット |
JP5965539B2 (ja) * | 2013-03-01 | 2016-08-10 | 田中貴金属工業株式会社 | FePt−C系スパッタリングターゲット |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5226155B2 (ja) | 2010-08-31 | 2013-07-03 | Jx日鉱日石金属株式会社 | Fe−Pt系強磁性材スパッタリングターゲット |
US9683284B2 (en) | 2011-03-30 | 2017-06-20 | Jx Nippon Mining & Metals Corporation | Sputtering target for magnetic recording film |
MY167825A (en) * | 2012-06-18 | 2018-09-26 | Jx Nippon Mining & Metals Corp | Sputtering target for magnetic recording film |
WO2014064995A1 (ja) * | 2012-10-25 | 2014-05-01 | Jx日鉱日石金属株式会社 | 非磁性物質分散型Fe-Pt系スパッタリングターゲット |
SG11201602163YA (en) * | 2013-11-22 | 2016-04-28 | Jx Nippon Mining & Metals Corp | Sputtering target for forming magnetic recording film and method for producing same |
JP6030271B2 (ja) * | 2014-03-18 | 2016-11-24 | Jx金属株式会社 | 磁性材スパッタリングターゲット |
WO2016047236A1 (ja) | 2014-09-22 | 2016-03-31 | Jx金属株式会社 | 磁気記録膜形成用スパッタリングターゲット及びその製造方法 |
CN114959599A (zh) * | 2014-09-26 | 2022-08-30 | 捷客斯金属株式会社 | 磁记录膜形成用溅射靶及其制造方法 |
MY184036A (en) | 2016-02-19 | 2021-03-17 | Jx Nippon Mining & Metals Corp | Sputtering target for magnetic recording medium, and magnetic thin film |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006040542A (ja) * | 2005-10-17 | 2006-02-09 | Showa Denko Kk | 磁気記録媒体 |
WO2008035681A1 (en) * | 2006-09-20 | 2008-03-27 | Hitachi Metals, Ltd. | Coated metal fine particles and process for production thereof |
WO2008059562A1 (fr) * | 2006-11-14 | 2008-05-22 | Fujitsu Limited | Dispositif de mémoire magnétique |
JP2008287829A (ja) * | 2007-05-21 | 2008-11-27 | Toshiba Corp | 垂直磁気記録媒体 |
WO2010110033A1 (ja) * | 2009-03-27 | 2010-09-30 | 日鉱金属株式会社 | 非磁性材粒子分散型強磁性材スパッタリングターゲット |
JP2010235411A (ja) * | 2009-03-31 | 2010-10-21 | Fujifilm Corp | 六方晶フェライト磁性粉末の製造方法ならびに磁気記録媒体およびその製造方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3098204B2 (ja) * | 1997-03-07 | 2000-10-16 | ティーディーケイ株式会社 | 光磁気記録用合金ターゲット、その製造方法およびその再生方法 |
US6007623A (en) * | 1997-08-29 | 1999-12-28 | International Business Machines Corporation | Method for making horizontal magnetic recording media having grains of chemically-ordered FePt or CoPt |
JP3141109B2 (ja) | 1999-04-19 | 2001-03-05 | 東北大学長 | 磁気記録媒体及び磁気記録媒体の製造方法 |
JP3328692B2 (ja) | 1999-04-26 | 2002-09-30 | 東北大学長 | 磁気記録媒体の製造方法 |
TW520519B (en) * | 2001-03-02 | 2003-02-11 | Aichi Steel Corp | Fe-Pt based magnet and manufacturing method thereof |
US20070189916A1 (en) | 2002-07-23 | 2007-08-16 | Heraeus Incorporated | Sputtering targets and methods for fabricating sputtering targets having multiple materials |
KR100470151B1 (ko) | 2002-10-29 | 2005-02-05 | 한국과학기술원 | FePtC 박막을 이용한 고밀도 자기기록매체 및 그제조방법 |
CN100555418C (zh) * | 2006-01-24 | 2009-10-28 | 鸿富锦精密工业(深圳)有限公司 | 垂直磁记录介质、及其制造方法 |
US20080057350A1 (en) | 2006-09-01 | 2008-03-06 | Heraeus, Inc. | Magnetic media and sputter targets with compositions of high anisotropy alloys and oxide compounds |
KR101356280B1 (ko) * | 2006-10-13 | 2014-01-28 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | Sb-Te 기 합금 소결체 스퍼터링 타겟 |
JP5204460B2 (ja) * | 2007-10-24 | 2013-06-05 | 三井金属鉱業株式会社 | 磁気記録膜用スパッタリングターゲットおよびその製造方法 |
US8133332B2 (en) * | 2009-02-12 | 2012-03-13 | Seagate Technology Llc | Method for preparing FePt media at low ordering temperature and fabrication of exchange coupled composite media and gradient anisotropy media for magnetic recording |
US8173282B1 (en) * | 2009-12-11 | 2012-05-08 | Wd Media, Inc. | Perpendicular magnetic recording medium with an ordering temperature reducing layer |
US8889275B1 (en) * | 2010-08-20 | 2014-11-18 | WD Media, LLC | Single layer small grain size FePT:C film for heat assisted magnetic recording media |
JP5226155B2 (ja) | 2010-08-31 | 2013-07-03 | Jx日鉱日石金属株式会社 | Fe−Pt系強磁性材スパッタリングターゲット |
US20130292245A1 (en) | 2010-12-20 | 2013-11-07 | Jx Nippon Mining & Metals Corporation | FE-PT-Based Ferromagnetic Sputtering Target and Method for Producing Same |
US9683284B2 (en) | 2011-03-30 | 2017-06-20 | Jx Nippon Mining & Metals Corporation | Sputtering target for magnetic recording film |
WO2013046882A1 (ja) | 2011-09-26 | 2013-04-04 | Jx日鉱日石金属株式会社 | Fe-Pt-C系スパッタリングターゲット |
CN103930592B (zh) | 2011-12-22 | 2016-03-16 | 吉坤日矿日石金属株式会社 | 分散有C粒子的Fe-Pt型溅射靶 |
JP5705993B2 (ja) | 2012-05-22 | 2015-04-22 | Jx日鉱日石金属株式会社 | C粒子が分散したFe−Pt−Ag−C系スパッタリングターゲット及びその製造方法 |
MY167825A (en) | 2012-06-18 | 2018-09-26 | Jx Nippon Mining & Metals Corp | Sputtering target for magnetic recording film |
SG11201404072YA (en) | 2012-07-20 | 2014-10-30 | Jx Nippon Mining & Metals Corp | Sputtering target for forming magnetic recording film and process for producing same |
WO2014064995A1 (ja) | 2012-10-25 | 2014-05-01 | Jx日鉱日石金属株式会社 | 非磁性物質分散型Fe-Pt系スパッタリングターゲット |
-
2011
- 2011-11-14 US US13/880,135 patent/US9945026B2/en active Active
- 2011-11-14 MY MYPI2013001192A patent/MY164370A/en unknown
- 2011-11-14 SG SG2013024963A patent/SG189255A1/en unknown
- 2011-11-14 WO PCT/JP2011/076147 patent/WO2012086335A1/ja active Application Filing
- 2011-11-14 JP JP2012511850A patent/JP5290468B2/ja active Active
- 2011-11-14 CN CN201180061229.0A patent/CN103270554B/zh active Active
- 2011-11-16 TW TW100141785A patent/TWI547579B/zh active
-
2017
- 2017-10-11 US US15/730,409 patent/US20180044779A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006040542A (ja) * | 2005-10-17 | 2006-02-09 | Showa Denko Kk | 磁気記録媒体 |
WO2008035681A1 (en) * | 2006-09-20 | 2008-03-27 | Hitachi Metals, Ltd. | Coated metal fine particles and process for production thereof |
WO2008059562A1 (fr) * | 2006-11-14 | 2008-05-22 | Fujitsu Limited | Dispositif de mémoire magnétique |
JP2008287829A (ja) * | 2007-05-21 | 2008-11-27 | Toshiba Corp | 垂直磁気記録媒体 |
WO2010110033A1 (ja) * | 2009-03-27 | 2010-09-30 | 日鉱金属株式会社 | 非磁性材粒子分散型強磁性材スパッタリングターゲット |
JP2010235411A (ja) * | 2009-03-31 | 2010-10-21 | Fujifilm Corp | 六方晶フェライト磁性粉末の製造方法ならびに磁気記録媒体およびその製造方法 |
Cited By (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016094671A (ja) * | 2011-03-30 | 2016-05-26 | 田中貴金属工業株式会社 | FePt−C系スパッタリングターゲット |
JP2012214874A (ja) * | 2011-03-30 | 2012-11-08 | Tanaka Kikinzoku Kogyo Kk | FePt−C系スパッタリングターゲット及びその製造方法 |
JP5301751B1 (ja) * | 2011-09-26 | 2013-09-25 | Jx日鉱日石金属株式会社 | Fe−Pt−C系スパッタリングターゲット |
WO2013046882A1 (ja) * | 2011-09-26 | 2013-04-04 | Jx日鉱日石金属株式会社 | Fe-Pt-C系スパッタリングターゲット |
US9314846B2 (en) | 2012-01-13 | 2016-04-19 | Tanaka Kikinzoku Kogyo K.K. | Process for producing FePt-based sputtering target |
US9358612B2 (en) | 2012-01-13 | 2016-06-07 | Tanaka Kikinzoku Kogyo K.K. | FePt-based sputtering target |
WO2013105648A1 (ja) * | 2012-01-13 | 2013-07-18 | 田中貴金属工業株式会社 | FePt系スパッタリングターゲット及びその製造方法 |
WO2013105647A1 (ja) * | 2012-01-13 | 2013-07-18 | 田中貴金属工業株式会社 | FePt系スパッタリングターゲット及びその製造方法 |
US9314845B2 (en) | 2012-01-13 | 2016-04-19 | Tanaka Kikinzoku Kogyo K.K. | Process for producing FePt-based sputtering target |
US9095901B2 (en) | 2012-01-13 | 2015-08-04 | Tanaka Kikinzoku Kogyo K.K. | FePt-based sputtering target |
JPWO2013105647A1 (ja) * | 2012-01-13 | 2015-05-11 | 田中貴金属工業株式会社 | FePt系スパッタリングターゲット及びその製造方法 |
JPWO2013105648A1 (ja) * | 2012-01-13 | 2015-05-11 | 田中貴金属工業株式会社 | FePt系スパッタリングターゲット及びその製造方法 |
US10325762B2 (en) * | 2012-07-20 | 2019-06-18 | Jx Nippon Mining & Metals Corporation | Sputtering target for forming magnetic recording film and process for producing same |
US20150060268A1 (en) * | 2012-07-20 | 2015-03-05 | Jx Nippon Mining & Metals Corporation | Sputtering Target for forming Magnetic Recording Film and Process for Producing Same |
WO2014024519A1 (ja) * | 2012-08-10 | 2014-02-13 | 三井金属鉱業株式会社 | 焼結体およびスパッタリングターゲット |
JP2014041682A (ja) * | 2012-08-24 | 2014-03-06 | Mitsubishi Materials Corp | 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法 |
JP5689543B2 (ja) * | 2012-08-31 | 2015-03-25 | Jx日鉱日石金属株式会社 | Fe系磁性材焼結体 |
US20150107411A1 (en) * | 2012-08-31 | 2015-04-23 | Jx Nippon Mining & Metals Corporation | Fe-Based Magnetic Material Sintered Compact |
US10090012B2 (en) * | 2012-08-31 | 2018-10-02 | Jx Nippon Mining & Metals Corporation | Fe-bases magnetic material sintered compact |
JP5567227B1 (ja) * | 2012-09-21 | 2014-08-06 | Jx日鉱日石金属株式会社 | Fe−Pt系磁性材焼結体 |
CN104662606A (zh) * | 2012-09-21 | 2015-05-27 | 吉坤日矿日石金属株式会社 | Fe-Pt基磁性材料烧结体 |
US20150213822A1 (en) * | 2012-09-21 | 2015-07-30 | Jx Nippon Mining & Metals Corporation | Fe-Pt Based Magnetic Material Sintered Compact |
US9368142B2 (en) | 2012-09-27 | 2016-06-14 | Seagate Technology Llc | Magnetic stack including TiN-X intermediate layer |
WO2014052344A1 (en) * | 2012-09-27 | 2014-04-03 | Seagate Technology Llc | Magnetic stack including tin-x intermediate layer |
JP2015530691A (ja) * | 2012-09-27 | 2015-10-15 | シーゲイト テクノロジー エルエルシー | TiN−X中間層を含む磁気スタック |
JP5965539B2 (ja) * | 2013-03-01 | 2016-08-10 | 田中貴金属工業株式会社 | FePt−C系スパッタリングターゲット |
US10186404B2 (en) | 2013-03-01 | 2019-01-22 | Tanaka Kikinzoku Kogyo K.K. | FePt—C-based sputtering target and method for manufacturing same |
WO2014141789A1 (ja) * | 2013-03-11 | 2014-09-18 | Jx日鉱日石金属株式会社 | 磁気記録膜形成用スパッタリングターゲット及び該ターゲットの製造に用いる炭素原料 |
JP5973056B2 (ja) * | 2013-03-11 | 2016-08-23 | Jx金属株式会社 | 磁気記録膜形成用スパッタリングターゲットの製造方法 |
JP2016173871A (ja) * | 2013-03-11 | 2016-09-29 | Jx金属株式会社 | 磁気記録膜形成用スパッタリングターゲット及び該ターゲットの製造に用いる炭素原料 |
JP5876155B2 (ja) * | 2013-04-26 | 2016-03-02 | Jx金属株式会社 | 磁気記録膜用スパッタリングターゲット及びその製造に用いる炭素原料 |
CN104955981A (zh) * | 2013-04-26 | 2015-09-30 | 吉坤日矿日石金属株式会社 | 磁记录膜用溅射靶及用于制造该溅射靶的碳原料 |
WO2014175392A1 (ja) * | 2013-04-26 | 2014-10-30 | Jx日鉱日石金属株式会社 | 磁気記録膜用スパッタリングターゲット及びその製造に用いる炭素原料 |
JP5946922B2 (ja) * | 2013-06-06 | 2016-07-06 | Jx金属株式会社 | 磁性記録媒体用スパッタリングターゲット |
WO2014196377A1 (ja) * | 2013-06-06 | 2014-12-11 | Jx日鉱日石金属株式会社 | 磁性記録媒体用スパッタリングターゲット |
Also Published As
Publication number | Publication date |
---|---|
US20130213803A1 (en) | 2013-08-22 |
JPWO2012086335A1 (ja) | 2014-05-22 |
CN103270554B (zh) | 2016-09-28 |
SG189255A1 (en) | 2013-05-31 |
JP5290468B2 (ja) | 2013-09-18 |
MY164370A (en) | 2017-12-15 |
US20180044779A1 (en) | 2018-02-15 |
TW201229274A (en) | 2012-07-16 |
CN103270554A (zh) | 2013-08-28 |
US9945026B2 (en) | 2018-04-17 |
TWI547579B (zh) | 2016-09-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5290468B2 (ja) | C粒子が分散したFe−Pt系スパッタリングターゲット | |
JP5457615B1 (ja) | 磁気記録膜形成用スパッタリングターゲット及びその製造方法 | |
TWI550114B (zh) | Fe-Pt-C系濺鍍靶 | |
JP5587495B2 (ja) | C粒子が分散したFe−Pt系スパッタリングターゲット | |
JP5226155B2 (ja) | Fe−Pt系強磁性材スパッタリングターゲット | |
JP5705993B2 (ja) | C粒子が分散したFe−Pt−Ag−C系スパッタリングターゲット及びその製造方法 | |
WO2012105201A1 (ja) | 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法 | |
WO2012133166A1 (ja) | 磁気記録膜用スパッタリングターゲット | |
JP6285043B2 (ja) | 磁気記録膜形成用スパッタリングターゲット及びその製造方法 | |
JP5913620B2 (ja) | Fe−Pt系焼結体スパッタリングターゲット及びその製造方法 | |
JP5041261B2 (ja) | 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法 | |
WO2016047578A1 (ja) | 磁気記録膜形成用スパッタリングターゲット及びその製造方法 | |
JP6437427B2 (ja) | 磁気記録媒体用スパッタリングターゲット | |
JP5944580B2 (ja) | スパッタリングターゲット | |
WO2014188916A1 (ja) | 磁性記録媒体用スパッタリングターゲット | |
JP6062586B2 (ja) | 磁気記録膜形成用スパッタリングターゲット |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 2012511850 Country of ref document: JP |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 11851896 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13880135 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 11851896 Country of ref document: EP Kind code of ref document: A1 |