WO2012017796A1 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- WO2012017796A1 WO2012017796A1 PCT/JP2011/066063 JP2011066063W WO2012017796A1 WO 2012017796 A1 WO2012017796 A1 WO 2012017796A1 JP 2011066063 W JP2011066063 W JP 2011066063W WO 2012017796 A1 WO2012017796 A1 WO 2012017796A1
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
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Abstract
Description
図1および図2を参照して、本発明による半導体装置の実施の形態1を説明する。
図15を参照して、本発明による半導体装置の実施の形態2を説明する。
図25を参照して、本発明による半導体装置の参考例を説明する。
図26に示した半導体装置は、基本的には図25に示した半導体装置と同様の構造を備えるが、ガードリング45(図25参照)に代えてJTE(Junction Termination Extension)領域46が形成されている点が異なる。JTE領域46は、導電型がp型の領域である。このようなJTE領域46も、図25に示したガードリング45と同様にイオン注入および活性化アニールを実施することにより形成することができる。そして、図25に示した半導体装置の製造方法と同様に、図26に示した半導体装置の製造方法においても、JTE領域46を形成するためのイオン注入後の活性化アニール処理においては、少なくとも側面20を覆うようなキャップ層を形成することなく活性化アニール処理を実施する。このようにしても、側面20は安定な結晶面(たとえば{03-3-8}面)によって構成されているため、当該活性アニールによっても側面20の表面が荒れるといった問題は発生しない。また、上記図25および図26に示したガードリング45および/またはJET構造は、先に説明した本発明による半導体装置の実施の形態1または実施の形態2に適用することもできる。
Claims (14)
- 主表面を有する基板(1、31)と、
前記基板(1、31)の前記主表面上に形成され、前記主表面に対して傾斜した端面(20)を含む炭化珪素層(2~5、32~35)とを備え、
前記端面(20)は実質的に{03-3-8}面を含み、
前記端面(20)はチャネル領域を含む、半導体装置。 - 前記炭化珪素層(2~5、32~35)は、前記基板(1、31)と対向する面と反対側に位置する主表面において、前記端面(20)が側面を構成する複数のメサ構造を含み、
複数の前記メサ構造の間に位置し、前記側面と連なる前記炭化珪素層(2~5、32~35)の表面部分が実質的に{000-1}面となっている、請求項1に記載の半導体装置。 - 複数の前記メサ構造において前記側面と連なる上部表面の平面形状が六角形であり、
複数の前記メサ構造は、少なくとも3つのメサ構造を含み、
複数の前記メサ構造は、平面視したときの中心を結んだ線分により正三角形が形成されるように配置されている、請求項2に記載の半導体装置。 - 前記メサ構造の前記上部表面が実質的に{000-1}面となっている、請求項3に記載の半導体装置。
- 前記メサ構造の上部表面上に形成されたソース電極(12)と、
複数の前記メサ構造の間に形成されたゲート電極(9)とを備える、請求項2に記載の半導体装置。 - 複数の前記メサ構造の間に形成された電界緩和領域(7)を備える、請求項2に記載の半導体装置。
- 主表面上に炭化珪素層(2~5、32~35)が形成された基板(1、31)を準備する工程と、
前記炭化珪素層(2~5、32~35)において、前記基板(1、31)の主表面に対して傾斜した端面(20)を形成する工程と、
前記端面(20)上に絶縁膜(8)を形成する工程と、
前記絶縁膜(8)上にゲート電極(9)を形成する工程とを備え、
前記端面(20)を形成する工程では、前記端面(20)が実質的に{03-3-8}面を含むように形成される、半導体装置の製造方法。 - 前記端面(20)を形成する工程では、前記炭化珪素層(2~5、32~35)において、前記基板(1、31)と対向する面と反対側に位置する主表面に、前記端面(20)が側面を構成する複数のメサ構造が形成される、請求項7に記載の半導体装置の製造方法。
- 前記端面(20)を形成する工程では、前記上部表面の平面形状が六角形である前記メサ構造が形成される、請求項8に記載の半導体装置の製造方法。
- 前記端面(20)を形成する工程は、
前記炭化珪素層(2~5、32~35)の主表面上に、平面形状が六角形状である複数のマスク層(17)を形成する工程と、
前記マスク層(17)をマスクとして用いて、前記上部表面の平面形状が六角形の前記メサ構造を形成する工程とを含む、請求項9に記載の半導体装置の製造方法。 - 前記端面(20)を形成する工程は、
前記炭化珪素層(2~5、32~35)の主表面上に、互いに間隔を隔てて、平面形状が六角形状である複数のマスク層(17)を形成する工程と、
前記マスク層(17)をマスクとして用いて、複数の前記マスク層(17)の間において露出する前記炭化珪素層(2~5、32~35)を部分的に除去することにより、前記炭化珪素層(2~5、32~35)の主表面に凹部(16)を形成する工程と、
前記凹部(16)の側壁を部分的に除去することにより、上部表面の平面形状が六角形の前記メサ構造を形成する工程とを含む、請求項9に記載の半導体装置の製造方法。 - 前記端面(20)を形成する工程では、前記メサ構造の前記側面を自己形成的に形成する、請求項8に記載の半導体装置の製造方法。
- 前記端面(20)を形成する工程では、前記メサ構造の前記側面と、複数の前記メサ構造の間に位置し、前記側面と連なる前記炭化珪素層(2~5、32~35)の表面部分とを自己形成的に形成する、請求項8に記載の半導体装置の製造方法。
- 前記炭化珪素層(2~5、32~35)に導電性不純物を注入する工程と、
前記注入された導電性不純物を活性化するための熱処理を行なう工程とを備え、
前記熱処理を行なう工程では、前記炭化珪素層(2~5、32~35)の表面は熱処理を行なうための雰囲気ガスに露出した状態になっている、請求項7に記載の半導体装置の製造方法。
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CN201180004823.6A CN102652362B (zh) | 2010-08-03 | 2011-07-14 | 半导体器件及其制造方法 |
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CA2783310A CA2783310A1 (en) | 2010-08-03 | 2011-07-14 | Semiconductor device and method for manufacturing same |
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Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013038862A1 (ja) * | 2011-09-14 | 2013-03-21 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
WO2013038860A1 (ja) * | 2011-09-14 | 2013-03-21 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
CN103247680A (zh) * | 2012-02-13 | 2013-08-14 | 住友电气工业株式会社 | 碳化硅半导体器件和制造碳化硅半导体器件的方法 |
WO2013118437A1 (ja) * | 2012-02-10 | 2013-08-15 | パナソニック株式会社 | 半導体装置及びその製造方法 |
WO2013153870A1 (ja) * | 2012-04-12 | 2013-10-17 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
JP2014007310A (ja) * | 2012-06-26 | 2014-01-16 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
JP2014107499A (ja) * | 2012-11-29 | 2014-06-09 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置およびその製造方法 |
JP2014120662A (ja) * | 2012-12-18 | 2014-06-30 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
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US8981384B2 (en) | 2010-08-03 | 2015-03-17 | Sumitomo Electric Industries, Ltd. | Semiconductor device and method for manufacturing same |
US9000447B2 (en) | 2011-09-26 | 2015-04-07 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device |
US8999854B2 (en) | 2011-11-21 | 2015-04-07 | Sumitomo Electric Industries, Ltd. | Method for manufacturing silicon carbide semiconductor device |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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JP6367760B2 (ja) * | 2015-06-11 | 2018-08-01 | トヨタ自動車株式会社 | 絶縁ゲート型スイッチング装置とその製造方法 |
JP6708954B2 (ja) * | 2016-03-31 | 2020-06-10 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
DE102016121680A1 (de) * | 2016-11-11 | 2018-05-17 | Infineon Technologies Ag | Halbleiterwafer und Halbleitervorrichtungen mit einer Sperrschicht und Verfahren zur Herstellung |
US11563011B2 (en) * | 2020-09-30 | 2023-01-24 | Micron Technology, Inc. | Integrated circuitry, memory circuitry, method used in forming integrated circuitry, and method used in forming memory circuitry |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07326755A (ja) * | 1994-04-06 | 1995-12-12 | Nippondenso Co Ltd | 半導体装置及びその製造方法 |
JPH09199724A (ja) * | 1996-01-23 | 1997-07-31 | Denso Corp | 炭化珪素半導体装置 |
JP2002261280A (ja) * | 2002-01-11 | 2002-09-13 | Denso Corp | 炭化珪素半導体装置 |
JP2002359378A (ja) * | 2001-03-28 | 2002-12-13 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2003100657A (ja) * | 2001-09-20 | 2003-04-04 | Nissan Motor Co Ltd | 半導体装置の製造方法 |
JP2005340685A (ja) * | 2004-05-31 | 2005-12-08 | Fuji Electric Holdings Co Ltd | 炭化珪素半導体素子 |
JP2006351743A (ja) * | 2005-06-15 | 2006-12-28 | Fuji Electric Holdings Co Ltd | Mosゲート型炭化珪素半導体装置およびその製造方法 |
JP2007165657A (ja) * | 2005-12-14 | 2007-06-28 | Fuji Electric Holdings Co Ltd | 半導体装置の製造方法および半導体装置 |
JP2007243080A (ja) * | 2006-03-13 | 2007-09-20 | Fuji Electric Holdings Co Ltd | 半導体装置およびその製造方法 |
JP2008135653A (ja) * | 2006-11-29 | 2008-06-12 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置の製造方法 |
JP2010040564A (ja) * | 2008-07-31 | 2010-02-18 | Sumitomo Electric Ind Ltd | 炭化ケイ素半導体装置およびその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5506421A (en) * | 1992-11-24 | 1996-04-09 | Cree Research, Inc. | Power MOSFET in silicon carbide |
EP0676814B1 (en) * | 1994-04-06 | 2006-03-22 | Denso Corporation | Process of producing trench semiconductor device |
JP4843854B2 (ja) * | 2001-03-05 | 2011-12-21 | 住友電気工業株式会社 | Mosデバイス |
JP4158453B2 (ja) * | 2002-08-22 | 2008-10-01 | 株式会社デンソー | 半導体装置及びその製造方法 |
US7345309B2 (en) * | 2004-08-31 | 2008-03-18 | Lockheed Martin Corporation | SiC metal semiconductor field-effect transistor |
US20060214268A1 (en) * | 2005-03-25 | 2006-09-28 | Shindengen Electric Manufacturing Co., Ltd. | SiC semiconductor device |
JP5017823B2 (ja) * | 2005-09-12 | 2012-09-05 | 富士電機株式会社 | 半導体素子の製造方法 |
JP2007149745A (ja) * | 2005-11-24 | 2007-06-14 | Asahi Kasei Microsystems Kk | 半導体装置及びその製造方法 |
JP2009033036A (ja) * | 2007-07-30 | 2009-02-12 | Hitachi Ltd | 半導体装置及びこれを用いた電気回路装置 |
-
2010
- 2010-08-03 JP JP2010174663A patent/JP5707770B2/ja active Active
-
2011
- 2011-07-14 US US13/512,456 patent/US20120228640A1/en not_active Abandoned
- 2011-07-14 KR KR1020127011631A patent/KR20130098847A/ko not_active Application Discontinuation
- 2011-07-14 WO PCT/JP2011/066063 patent/WO2012017796A1/ja active Application Filing
- 2011-07-14 CA CA2783310A patent/CA2783310A1/en not_active Abandoned
- 2011-07-14 CN CN201180004823.6A patent/CN102652362B/zh active Active
- 2011-07-14 EP EP11814426.0A patent/EP2602822B1/en active Active
- 2011-08-01 TW TW100127239A patent/TW201214707A/zh unknown
-
2017
- 2017-01-05 US US15/399,387 patent/US20170117381A1/en not_active Abandoned
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07326755A (ja) * | 1994-04-06 | 1995-12-12 | Nippondenso Co Ltd | 半導体装置及びその製造方法 |
JPH09199724A (ja) * | 1996-01-23 | 1997-07-31 | Denso Corp | 炭化珪素半導体装置 |
JP2002359378A (ja) * | 2001-03-28 | 2002-12-13 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2003100657A (ja) * | 2001-09-20 | 2003-04-04 | Nissan Motor Co Ltd | 半導体装置の製造方法 |
JP2002261280A (ja) * | 2002-01-11 | 2002-09-13 | Denso Corp | 炭化珪素半導体装置 |
JP2005340685A (ja) * | 2004-05-31 | 2005-12-08 | Fuji Electric Holdings Co Ltd | 炭化珪素半導体素子 |
JP2006351743A (ja) * | 2005-06-15 | 2006-12-28 | Fuji Electric Holdings Co Ltd | Mosゲート型炭化珪素半導体装置およびその製造方法 |
JP2007165657A (ja) * | 2005-12-14 | 2007-06-28 | Fuji Electric Holdings Co Ltd | 半導体装置の製造方法および半導体装置 |
JP2007243080A (ja) * | 2006-03-13 | 2007-09-20 | Fuji Electric Holdings Co Ltd | 半導体装置およびその製造方法 |
JP2008135653A (ja) * | 2006-11-29 | 2008-06-12 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置の製造方法 |
JP2010040564A (ja) * | 2008-07-31 | 2010-02-18 | Sumitomo Electric Ind Ltd | 炭化ケイ素半導体装置およびその製造方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2602822A4 * |
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9054022B2 (en) | 2010-08-03 | 2015-06-09 | Sumitomo Electric Industries, Ltd. | Method for manufacturing semiconductor device |
US8981384B2 (en) | 2010-08-03 | 2015-03-17 | Sumitomo Electric Industries, Ltd. | Semiconductor device and method for manufacturing same |
WO2013038860A1 (ja) * | 2011-09-14 | 2013-03-21 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
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WO2013038862A1 (ja) * | 2011-09-14 | 2013-03-21 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
US9000447B2 (en) | 2011-09-26 | 2015-04-07 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device |
US8999854B2 (en) | 2011-11-21 | 2015-04-07 | Sumitomo Electric Industries, Ltd. | Method for manufacturing silicon carbide semiconductor device |
JP5685736B2 (ja) * | 2012-02-10 | 2015-03-18 | パナソニックIpマネジメント株式会社 | 半導体装置及びその製造方法 |
CN104106142A (zh) * | 2012-02-10 | 2014-10-15 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
US9209294B1 (en) | 2012-02-10 | 2015-12-08 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device and method for manufacturing same |
CN104106142B (zh) * | 2012-02-10 | 2016-03-09 | 松下知识产权经营株式会社 | 半导体装置及其制造方法 |
JPWO2013118437A1 (ja) * | 2012-02-10 | 2015-05-11 | パナソニックIpマネジメント株式会社 | 半導体装置及びその製造方法 |
WO2013118437A1 (ja) * | 2012-02-10 | 2013-08-15 | パナソニック株式会社 | 半導体装置及びその製造方法 |
EP2626905A3 (en) * | 2012-02-13 | 2015-01-21 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device |
CN103247680A (zh) * | 2012-02-13 | 2013-08-14 | 住友电气工业株式会社 | 碳化硅半导体器件和制造碳化硅半导体器件的方法 |
WO2013153870A1 (ja) * | 2012-04-12 | 2013-10-17 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
JP2014007310A (ja) * | 2012-06-26 | 2014-01-16 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
JP2014107499A (ja) * | 2012-11-29 | 2014-06-09 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置およびその製造方法 |
JP2014120662A (ja) * | 2012-12-18 | 2014-06-30 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
US9647072B2 (en) | 2012-12-18 | 2017-05-09 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device |
JP2015026723A (ja) * | 2013-07-26 | 2015-02-05 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
US9680006B2 (en) | 2013-07-26 | 2017-06-13 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device and method of manufacturing the same |
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CN102652362B (zh) | 2015-07-08 |
CN102652362A (zh) | 2012-08-29 |
KR20130098847A (ko) | 2013-09-05 |
EP2602822A1 (en) | 2013-06-12 |
JP2012038770A (ja) | 2012-02-23 |
US20120228640A1 (en) | 2012-09-13 |
TW201214707A (en) | 2012-04-01 |
CA2783310A1 (en) | 2012-02-09 |
WO2012017796A9 (ja) | 2012-05-31 |
US20170117381A1 (en) | 2017-04-27 |
JP5707770B2 (ja) | 2015-04-30 |
EP2602822B1 (en) | 2022-01-19 |
EP2602822A4 (en) | 2014-01-01 |
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