JP5870898B2 - 炭化珪素半導体装置 - Google Patents
炭化珪素半導体装置 Download PDFInfo
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- JP5870898B2 JP5870898B2 JP2012229527A JP2012229527A JP5870898B2 JP 5870898 B2 JP5870898 B2 JP 5870898B2 JP 2012229527 A JP2012229527 A JP 2012229527A JP 2012229527 A JP2012229527 A JP 2012229527A JP 5870898 B2 JP5870898 B2 JP 5870898B2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 44
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 44
- 239000004065 semiconductor Substances 0.000 title claims description 35
- 239000002131 composite material Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 26
- 239000010410 layer Substances 0.000 description 51
- 239000013078 crystal Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 16
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 12
- 238000005530 etching Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 125000004429 atom Chemical group 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 8
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000002050 diffraction method Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
Description
図15に示すように、単結晶基板80上にnドリフト層81が形成される。具体的には、単結晶基板80上におけるエピタキシャル成長が行われる。このエピタキシャル成長は、たとえば原料ガスとしてシラン(SiH4)とプロパン(C3H8)との混合ガスを用い、キャリアガスとしてたとえば水素ガス(H2)を用いたCVD(Chemical Vapor Deposition)法により行うことができる。この際、不純物として、たとえば窒素(N)やリン(P)を導入することが好ましい。
Claims (6)
- ゲート絶縁膜と、
前記ゲート絶縁膜に覆われた側壁を有するトレンチが設けられ、ポリタイプ4Hを有する炭化珪素から作られた基板とを備え、
前記側壁は、長さ方向を有するチャネル面を含み、前記チャネル面の少なくとも一部は、前記長さ方向において巨視的に延び前記長さ方向に交差する第1の方向において微視的な寸法を有する第1の帯状面と、前記長さ方向において巨視的に延び前記長さ方向に交差する第2の方向において微視的な寸法を有する第2の帯状面とが、前記長さ方向に交差する第3の方向において微視的に繰り返されることによって構成されており、前記第2の方向は前記第1の方向と異なり、前記第1および第2の帯状面のそれぞれは第1および第2の微視的面を含み、前記第1および第2の微視的面のそれぞれは第1の面方位(h1 k1 l1 m1)および第2の面方位(h2 k2 l2 m1)を有し、第1の面方位(h1 k1 l1 m1)および第2の面方位(h2 k2 l2 m1)の各々は{0 −3 3 −8}に含まれ、第2の面方位(h2 k2 l2 m1)は(h1 k1 l1 m1)および(−h1 −k1 −l1 m1)の各々と異なっており、
前記第1および第2の帯状面のそれぞれは第3および第4の微視的面を含み、前記第3および第4の微視的面のそれぞれは、{0 −1 1 −1}によって包括的に表される複数の面方位に含まれる第3および第4の面方位を有する、炭化珪素半導体装置。 - 前記第1の面方位(h1 k1 l1 m1)および第2の面方位(h2 k2 l2 m1)はc面内において互いに60度異なっている、請求項1に記載の炭化珪素半導体装置。
- 前記チャネル面の少なくとも一部は面方位{1 1 −2 n}(n≠0)を有する、請求項1または2に記載の炭化珪素半導体装置。
- 前記チャネル面は{0 0 0 1}に対して37.1度以上52.7度以下の傾きを有する、請求項1〜3のいずれか1項に記載の炭化珪素半導体装置。
- 前記第1および第3の微視的面は、面方位{0 −1 1 −2}を有する第1の複合面を構成しており、前記第2および第4の微視的面は、面方位{0 −1 1 −2}を有する第2の複合面を構成している、請求項1〜4のいずれか1項に記載の炭化珪素半導体装置。
- 前記第1および第2の帯状面の各々の面方位は{0 −3 3 −8}を有する、請求項1〜4のいずれか1項に記載の炭化珪素半導体装置。
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JP2012229527A JP5870898B2 (ja) | 2012-10-17 | 2012-10-17 | 炭化珪素半導体装置 |
PCT/JP2013/076656 WO2014061439A1 (ja) | 2012-10-17 | 2013-10-01 | 炭化珪素半導体装置 |
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JP2012229527A JP5870898B2 (ja) | 2012-10-17 | 2012-10-17 | 炭化珪素半導体装置 |
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JP2014082341A JP2014082341A (ja) | 2014-05-08 |
JP5870898B2 true JP5870898B2 (ja) | 2016-03-01 |
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DE19712561C1 (de) * | 1997-03-25 | 1998-04-30 | Siemens Ag | SiC-Halbleiteranordnung mit hoher Kanalbeweglichkeit |
JP2006013005A (ja) * | 2004-06-23 | 2006-01-12 | Denso Corp | 炭化珪素半導体基板およびその製造方法 |
DE112011102528T5 (de) * | 2010-07-29 | 2013-06-27 | Sumitomo Electric Industries, Ltd. | Siliziumkarbid-Substrat, Halbleitervorrichtung und Verfahren zum Herstellen derselben |
JP5707770B2 (ja) * | 2010-08-03 | 2015-04-30 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
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