WO2011052719A1 - ペリレンテトラカルボキシジイミド誘導体 - Google Patents
ペリレンテトラカルボキシジイミド誘導体 Download PDFInfo
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- WO2011052719A1 WO2011052719A1 PCT/JP2010/069277 JP2010069277W WO2011052719A1 WO 2011052719 A1 WO2011052719 A1 WO 2011052719A1 JP 2010069277 W JP2010069277 W JP 2010069277W WO 2011052719 A1 WO2011052719 A1 WO 2011052719A1
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- propylamine
- organic
- perylene
- alkyl group
- derivative
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- AZNXLKZNTQCCGV-UHFFFAOYSA-N CC(C12)(C=CC(C(N(CCCOC)C3=O)=O)=C1C3=CC=C2c(c1c23)ccc2C(N2CCCOC)=O)c1ccc3C2=O Chemical compound CC(C12)(C=CC(C(N(CCCOC)C3=O)=O)=C1C3=CC=C2c(c1c23)ccc2C(N2CCCOC)=O)c1ccc3C2=O AZNXLKZNTQCCGV-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D221/00—Heterocyclic compounds containing six-membered rings having one nitrogen atom as the only ring hetero atom, not provided for by groups C07D211/00 - C07D219/00
- C07D221/02—Heterocyclic compounds containing six-membered rings having one nitrogen atom as the only ring hetero atom, not provided for by groups C07D211/00 - C07D219/00 condensed with carbocyclic rings or ring systems
- C07D221/04—Ortho- or peri-condensed ring systems
- C07D221/18—Ring systems of four or more rings
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B5/00—Dyes with an anthracene nucleus condensed with one or more heterocyclic rings with or without carbocyclic rings
- C09B5/62—Cyclic imides or amidines of peri-dicarboxylic acids of the anthracene, benzanthrene, or perylene series
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
Definitions
- the present invention relates to a perylene tetracarboxydiimide derivative having a specific substituent.
- perylene pigment derivatives have been used as organic semiconductor materials used to form organic thin film solar cells, organic transistors, or organic photoconductors.
- perylene pigment derivatives have excellent semiconductor properties, such as perylene derivatives (Patent Document 1) in which part of the perylene skeleton is cyanated to improve semiconductor properties, and fluorinated alkyl groups.
- Patent Document 2 Perylene derivatives with improved durability by introduction
- the present inventors have studied to improve an organic semiconductor material used for an organic thin film solar cell, an organic transistor, an organic photoconductor, etc., and represented by the following general formula (1), general formula (2), or formula (3).
- the perylene tetracarboxydiimide derivative having a specific substituent is found to have excellent properties, leading to the present invention.
- the present invention provides a perylene tetracarboxydiimide derivative characterized by having a specific substituent represented by the following general formula (1), general formula (2), or formula (3).
- R 1 represents a branched alkyl group having 1 to 20 carbon atoms
- R 2 represents a branched alkyl group having 2 to 6 carbon atoms
- R 3 represents a branched alkyl group having 2 to 6 carbon atoms
- X 1 and X 2 represent a hetero atom selected from an oxygen atom, a sulfur atom and a selenium atom
- Y represents a halogen atom or a cyano group.
- M represents a number from 0 to 4
- n represents a number from 0 to 2, respectively.
- R 1 is a straight chain alkyl group having 1 to 20 carbon atoms
- R 2 is a straight chain alkyl group having 2 to 6 carbon atoms
- R 3 is a straight chain group having 2 to 6 carbon atoms.
- a chain alkyl group, X 1 and X 2 are oxygen atoms
- Y is a halogen atom or a cyano group
- m is a number from 0 to 4
- n is a number from 0 to 2.
- a perylenetetracarboxydiimide derivative that exhibits excellent semiconductor characteristics, has excellent durability when used as a thin film, has high solubility in organic solvents, and can be applied to useful organic semiconductor materials.
- the infrared absorption spectrum of the exemplary compound 1 The infrared absorption spectrum of the exemplary compound 2.
- the perylene tetracarboxydiimide derivative having a specific substituent of the present invention can be synthesized by a known method.
- perylenetetracarboxylic acid anhydride may be reacted with a corresponding amine in a high boiling organic solvent to introduce a specific substituent characterizing the present invention.
- the perylenetetracarboxydiimide derivative of the present invention can also be obtained by once converting perylenetetracarboxydiimide into a potassium salt and then introducing a specific substituent by reacting with a corresponding alkyl halide.
- amine component used when synthesizing the perylene tetracarboxydiimide derivative of the present invention the following may be mentioned.
- Examples of the perylene tetracarboxylic acid anhydride used when synthesizing the perylene tetracarboxydiimide derivative of the present invention include the following.
- perylene tetracarboxydiimide derivative when used for an organic solar cell, an organic photo semiconductor or an organic transistor, it is often deposited on a substrate under a high vacuum, which is a general method. This is because one of the major factors is that perylene tetracarboxydiimide derivatives known so far are almost insoluble in organic solvents.
- the perylene tetracarboxydiimide derivative having a specific substituent of the present invention is relatively soluble in an organic solvent, unlike a conventional derivative.
- the derivative of the present invention can be subjected to purification means such as column chromatography at the time of production, and when applied to an organic semiconductor material, it is dissolved in an organic solvent and spin-coated.
- the solubility property in an organic solvent means that the application of a perylene tetracarboxydiimide derivative to an organic semiconductor material is drastically improved.
- the perylene tetracarboxydiimide derivative of the present invention having a specific substituent as exemplified above is relatively soluble in, for example, an organic solvent as described below.
- organic solvent for example, halogen hydrocarbon solvents such as chloroform, dichloroethane, chlorobenzene, dichlorobenzene, trichlorobenzene, chloronaphthalene, ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, ester solvents such as ethyl acetate, butyl acetate, diethyl ether, Ether solvents such as dioxane and tetrahydrofuran, aromatic hydrocarbon solvents such as toluene, xylene and ethylbenzene, aprotic polar solvents such as sulfolane, N, N-dimethylformamide, N-methyl-2-pyrrolidone and di
- the perylene tetracarboxydiimide derivative of the present invention can be made into a solution having an appropriate concentration by using an organic solvent as mentioned above alone or in combination. Therefore, according to the perylene tetracarboxydiimide derivative of the present invention, by using the solution, a solution coating method such as a spin coating method that cannot be used with a conventional derivative can be applied. A uniform thin film can be formed. Further, since the perylenetetracarboxydiimide derivative of the present invention has sufficient semiconductor properties, the formed thin film functions as a good organic semiconductor thin film used for, for example, an organic thin film solar cell, an organic transistor, or an organic photoconductor. To be.
- each of the exemplified compounds 1 to 17 mentioned above is applied onto a silicon substrate by spin coating using each organic solvent. It was judged by the state of thin film formation. The results are shown in Table 2. As a result, although there is a slight difference depending on the chain length of the alkyl group in the general formula (1) and the hetero atom, it shows good solubility in organic solvents and a solution coating method such as a spin coating method should be applied. Is confirmed to be possible.
- Example 1 Synthesis of Exemplified Compound 1
- 3.92 g of perylenetetracarboxylic anhydride and 9.72 g of 3- (n-dodecyloxy) -n-propylamine were dispersed in 40 g of imidazole and stirred at 160 ° C. for 4 hours under a nitrogen stream. After cooling, the mixture was filtered, and the residue was washed with methanol / dilute hydrochloric acid and then water.
- FIG. 1 shows an infrared absorption spectrum.
- Example 2 Synthesis of Exemplified Compound 2 The same as Example 1 except that 9.72 g of 3- (n-dodecyloxy) -n-propylamine used in Example 1 was replaced with 5.24 g of 3- (n-butyloxy) -n-propylamine.
- 4.95 g of N, N′-bis (3- (n-butyloxy) -n-propyl) -3,4: 9,10-perylenetetracarboxydiimide was obtained as Exemplified Compound 2 (yield). 80%).
- combination example compound 2 is as showing below, By these analysis, it was confirmed that the example compound 2 is said compound.
- FIG. 2 shows an infrared absorption spectrum.
- Examples 3 to 17 Exemplified compounds 3 to 17 whose structures were previously shown in Table 1 were synthesized in the same manner as in Examples 1 and 2, respectively. The yield, melting point, and maximum absorption wavelength in the ultraviolet / visible light absorption spectrum of each compound obtained are shown in Table 3. The maximum absorption wavelength was also measured for the exemplary compounds 1 and 2 obtained in Examples 1 and 2, and the results were shown together with the yield and melting point. The ultraviolet and visible light absorption spectra of Exemplified Compounds 3 to 17 were almost the same as Exemplified Compounds 1 and 2.
- Table 3 below shows the yield, maximum absorption wavelength and melting point of Exemplified Compounds 1 to 17 synthesized in each Example.
- the drain voltage and the drain current at different gate voltages were measured.
- a clear saturation region was observed in the drain current-drain voltage curve, which indicates that the transistor is driven as a field effect transistor having typical n-type characteristics.
- the electron mobility calculated from this curve was 3.3 ⁇ 10 ⁇ 2 cm 2 / Vs, and the threshold voltage value was 15V.
- the transistor characteristics of the transistor obtained above were measured in the same manner as in Reference Example 1. As a result, it was shown that it is driven as a field effect transistor having typical n-type characteristics. Further, the electron mobility is 0.40 cm 2 / Vs, the threshold voltage value is 16 V, and it is confirmed that the semiconductor characteristics superior to those obtained when the thin film is formed by the vacuum deposition method of Reference Example 1 are obtained. did.
- a perylenetetracarboxydiimide derivative that exhibits excellent semiconductor characteristics and has excellent durability when used as a thin film and can be applied to useful organic semiconductor materials.
- the above-described perylenetetracarboxydiimide derivative provided by the present invention exhibits solubility in an organic solvent, a thin film or the like can be formed by a solution method, and its practicality is extremely high. It is expected.
Abstract
Description
[実施例1]
(例示化合物1の合成)
ペリレンテトラカルボン酸無水物3.92gと、3-(n-ドデシルオキシ)-n-プロピルアミン9.72gとをイミダゾール40g中に分散させ、窒素気流下160℃で4時間攪拌した。冷却後、濾過し、濾物をメタノール・希塩酸、次いで水の順に洗浄した。その後、濾物を乾燥して5.90gの、下記式(3)で示されるN,N'-ビス(3-(n-ドデシルオキシ)-n-プロピル)-3,4:9,10-ペリレンテトラカルボキシジイミドを、例示化合物1として得た(収率70%)。
融点:330℃付近(分解)
元素分析値()内は理論値:C;76.88%(76.92%)、H;8.30%(8.37%)、N;3.25%(3.32%)
図1に赤外吸収スペクトルを示す。
(例示化合物2の合成)
実施例1で使用した3-(n-ドデシルオキシ)-n-プロピルアミン9.72gを、3-(n-ブチルオキシ)-n-プロピルアミン5.24gに代えた以外は実施例1と同様の方法で、例示化合物2として、4.95gの、N,N'-ビス(3-(n-ブチルオキシ)-n-プロピル)-3,4:9,10-ペリレンテトラカルボキシジイミドを得た(収率80%)。合成した例示化合物2についての各分析結果は以下に示す通りであり、これらの分析によって、例示化合物2は、上記の化合物であることを確認した。
融点:340℃付近(分解)
元素分析値()内は理論値:C;73.81%(73.77%)、H;6.15%(6.19%)、N;4.49%(4.53%)
図2に赤外吸収スペクトルを示す。
実施例1および2と同様の方法で、先に表1中に構造を示した例示化合物3~17をそれぞれ合成した。そして、得られた各化合物の収率、融点、紫外・可視光吸収スペクトルにおける最大吸収波長を表3に示した。実施例1および2で得た例示化合物1、2についても最大吸収波長を測定し、結果を収率および融点とともに示した。例示化合物3~17の紫外・可視光吸収スペクトルは、例示化合物1、2とほぼ同様であった。
[参考例1]
例示化合物1(N,N'-ビス(3-(n-ドデシルオキシ)-n-プロピル)-3,4:9,10-ペリレンテトラカルボキシジイミド)を用いた有機薄膜トランジスタの作製
まず、ゲート絶縁体層となる酸化シリコン膜(厚さ200nm)を表面に有するシリコン基板を用意した。実施例1で得た例示化合物1からなる有機半導体薄膜は、酸化シリコン膜上に真空蒸着法(蒸着レート2[nm/sec])により、厚さ30nmとなるように成膜した。次に、シャドーマスクを介して、ソース/ドレイン電極として金電極のパターンを形成し(30nm)、トップコンタクト型有機薄膜トランジスタを作成した。このときの、チャネル長、チャネル幅は、それぞれ100μm、2000μmとした。
参考例1で用いた例示化合物1をクロロホルムに濃度0.25%となるように溶解し、該溶液を用いて、スピンコーター(1,500回転/分,40秒)にて、ITO電極を表面に有する酸化膜付シリコン基板上に有機半導体薄膜を形成し、真空中において140℃、1時間の減圧乾燥を行った。
本参考例では、参考例1で使用した例示化合物1に変えて、実施例2で得た例示化合物2(N,N'-ビス(3-(n-ブチルオキシ)-n-プロピル)-3,4:9,10-ペリレンテトラカルボキシジイミド)を使用した。
参考例1と同様に例示化合物2よりなる有機半導体層を有するトップコンタクト型有機薄膜トランジスタを作成した。そして、典型的なn型特性を有する電界効果トランジスタとして駆動することが示された。また、電子移動度は、3.8×10-3cm2/Vs、しきい電圧値は10Vであった。
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KR20127013355A KR101491888B1 (ko) | 2009-10-29 | 2010-10-29 | 페릴렌 테트라카르복시디이미드 유도체 |
JP2011538496A JP5643215B2 (ja) | 2009-10-29 | 2010-10-29 | ペリレンテトラカルボキシジイミド誘導体 |
CN201080047762.7A CN102574806B (zh) | 2009-10-29 | 2010-10-29 | 苝四甲酰二亚胺衍生物 |
EP10826849.1A EP2471778B1 (en) | 2009-10-29 | 2010-10-29 | Perylene tetracarboxydiimide derivative |
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JP (1) | JP5643215B2 (ja) |
KR (1) | KR101491888B1 (ja) |
CN (1) | CN102574806B (ja) |
TW (1) | TWI431005B (ja) |
WO (1) | WO2011052719A1 (ja) |
Cited By (5)
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WO2012160521A1 (en) * | 2011-05-24 | 2012-11-29 | Ecole Polytechnique Federale De Lausanne (Epfl) | Color conversion films comprising polymer-substituted organic fluorescent dyes |
WO2013024026A1 (en) * | 2011-08-12 | 2013-02-21 | Basf Se | Fluorinated perylene-based semiconducting materials |
JP2014519490A (ja) * | 2011-05-11 | 2014-08-14 | ビーエーエスエフ ソシエタス・ヨーロピア | ハロゲン化ペリレンベースの半導体材料 |
JPWO2016035640A1 (ja) * | 2014-09-01 | 2017-04-27 | 富士フイルム株式会社 | 有機半導体膜形成用組成物、有機半導体膜、及び有機半導体素子 |
JP2019106401A (ja) * | 2017-12-08 | 2019-06-27 | 住友化学株式会社 | 光電変換素子 |
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CN104557931B (zh) * | 2013-10-25 | 2016-08-17 | 济南大学 | N-吡啶基苝四甲酰二亚胺的制备及其光催化制氢性能 |
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- 2010-10-29 JP JP2011538496A patent/JP5643215B2/ja active Active
- 2010-10-29 CN CN201080047762.7A patent/CN102574806B/zh active Active
- 2010-10-29 TW TW099137147A patent/TWI431005B/zh active
- 2010-10-29 KR KR20127013355A patent/KR101491888B1/ko active IP Right Grant
- 2010-10-29 EP EP10826849.1A patent/EP2471778B1/en active Active
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JP2014519490A (ja) * | 2011-05-11 | 2014-08-14 | ビーエーエスエフ ソシエタス・ヨーロピア | ハロゲン化ペリレンベースの半導体材料 |
TWI598349B (zh) * | 2011-05-11 | 2017-09-11 | 巴地斯顏料化工廠 | 以鹵化苝為基質之半導體材料 |
WO2012160521A1 (en) * | 2011-05-24 | 2012-11-29 | Ecole Polytechnique Federale De Lausanne (Epfl) | Color conversion films comprising polymer-substituted organic fluorescent dyes |
US8986842B2 (en) | 2011-05-24 | 2015-03-24 | Ecole Polytechnique Federale De Lausanne (Epfl) | Color conversion films comprising polymer-substituted organic fluorescent dyes |
WO2013024026A1 (en) * | 2011-08-12 | 2013-02-21 | Basf Se | Fluorinated perylene-based semiconducting materials |
CN103764787A (zh) * | 2011-08-12 | 2014-04-30 | 巴斯夫欧洲公司 | 氟化苝基半导体材料 |
JP2014529593A (ja) * | 2011-08-12 | 2014-11-13 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | フッ素化ペリレンベースの半導体材料 |
JPWO2016035640A1 (ja) * | 2014-09-01 | 2017-04-27 | 富士フイルム株式会社 | 有機半導体膜形成用組成物、有機半導体膜、及び有機半導体素子 |
JP2019106401A (ja) * | 2017-12-08 | 2019-06-27 | 住友化学株式会社 | 光電変換素子 |
JP6995596B2 (ja) | 2017-12-08 | 2022-01-14 | 住友化学株式会社 | 光電変換素子 |
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JP5643215B2 (ja) | 2014-12-17 |
TWI431005B (zh) | 2014-03-21 |
KR20120085856A (ko) | 2012-08-01 |
EP2471778A4 (en) | 2013-04-17 |
CN102574806A (zh) | 2012-07-11 |
EP2471778B1 (en) | 2019-05-08 |
EP2471778A1 (en) | 2012-07-04 |
TW201124413A (en) | 2011-07-16 |
CN102574806B (zh) | 2014-07-02 |
JPWO2011052719A1 (ja) | 2013-03-21 |
KR101491888B1 (ko) | 2015-02-09 |
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