WO2011019189A2 - 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 - Google Patents

레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 Download PDF

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Publication number
WO2011019189A2
WO2011019189A2 PCT/KR2010/005238 KR2010005238W WO2011019189A2 WO 2011019189 A2 WO2011019189 A2 WO 2011019189A2 KR 2010005238 W KR2010005238 W KR 2010005238W WO 2011019189 A2 WO2011019189 A2 WO 2011019189A2
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Prior art keywords
resist
group
formula
ether
stripper composition
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Ceased
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PCT/KR2010/005238
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English (en)
French (fr)
Korean (ko)
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WO2011019189A3 (ko
Inventor
박면규
김태희
김정현
이승용
김병묵
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Dongwoo Fine Chem Co Ltd
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Dongwoo Fine Chem Co Ltd
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Priority to US13/387,087 priority Critical patent/US9081291B2/en
Priority to JP2012524640A priority patent/JP5647685B2/ja
Priority to CN201080034160.8A priority patent/CN102472985B/zh
Publication of WO2011019189A2 publication Critical patent/WO2011019189A2/ko
Publication of WO2011019189A3 publication Critical patent/WO2011019189A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Definitions

  • the present invention relates to a resist stripping liquid composition and a method of peeling a resist using the same, and more particularly, in the manufacturing process of a flat panel display, the resist pattern and the etching residue can be effectively removed, and the aluminum and / or copper wirings are damaged.
  • the present invention relates to a resist stripper composition and a method of peeling a resist using the same.
  • the present invention is excellent in resist pattern and the ability to remove dry and wet etch residues, excellent resisting corrosion of metal wirings including aluminum and / or copper, as well as excellent number of substrates treated resist stripper composition and It is an object of the present invention to provide a resist stripping method using the same.
  • the present invention (a) a basic compound comprising at least one selected from the compounds represented by the following formulas (1) to (3), (b) an amide compound represented by the formula (4), (c) a polar solvent and (d) It provides a resist stripper composition comprising a polyol compound represented by:
  • R1, R2, R3, R4, R5 and R6 are each independently hydrogen or an amino group unsubstituted or substituted with a C1-C10 alkyl group, a C2-C10 alkenyl group, a C1-C10 hydroxyalkyl group And an amino group, a phenyl group, or a benzyl group unsubstituted or substituted with a C1-C10 alkyl group, a C1-C4 alkyl group substituted with a carboxyl group, a C1-C10 alkoxy group unsubstituted or substituted with a hydroxy group.
  • R7, R8 and R9 are each independently hydrogen, a C1-C10 alkyl group, a C2-C10 alkenyl group, a C1-C10 hydroxyalkyl group, a carboxyl group, a C1-C10 alkoxy group substituted Or an amino group unsubstituted or substituted with an alkyl group having 1 to 10 carbon atoms or an alkyl group having 1 to 4 carbon atoms, and R7 and R8 may together form a ring.
  • R10 and R11 are each independently substituted with hydrogen, an alkylene group having 1 to 10 carbon atoms, an alkenylene group having 2 to 10 carbon atoms, a hydroxyalkylene group having 1 to 10 carbon atoms, a carbonyl group and an alkoxy group having 1 to 10 carbon atoms An alkylene group having 1 to 10 carbon atoms or a bond.
  • a resist stripping method comprising the step of peeling the resist modified and cured by the resist pattern formation and etching from the substrate using the resist stripper composition of the present invention.
  • the resist stripper composition of the present invention is excellent in resist pattern and dry and wet etching residue removal ability, and excellent in corrosion protection of metal wiring including aluminum and / or copper, so that a fine pattern is applied to achieve a high resolution pattern. It can be usefully used in the manufacturing process of a display apparatus and the manufacturing process of a flat panel display apparatus in which copper wiring was used. In addition, it is possible to process a large number of substrates can greatly contribute to cost reduction.
  • Test Example 3 is an electron scanning micrograph showing the criteria used to evaluate the number of treatments in Test Example 3 of the present invention.
  • the present invention (a) a basic compound comprising at least one selected from the compounds represented by the following formulas (1) to (3), (b) an amide compound represented by the formula (4), (c) a polar solvent and (d) It relates to a resist stripper composition comprising a polyol compound represented by:
  • R1, R2, R3, R4, R5 and R6 are each independently hydrogen or an amino group unsubstituted or substituted with a C1-C10 alkyl group, a C2-C10 alkenyl group, a C1-C10 hydroxyalkyl group And an amino group, a phenyl group, or a benzyl group unsubstituted or substituted with a C1-C10 alkyl group, a C1-C4 alkyl group substituted with a carboxyl group, a C1-C10 alkoxy group unsubstituted or substituted with a hydroxy group.
  • R7, R8 and R9 are each independently hydrogen, a C1-C10 alkyl group, a C2-C10 alkenyl group, a C1-C10 hydroxyalkyl group, a carboxyl group, a C1-C10 alkoxy group substituted Or an amino group unsubstituted or substituted with an alkyl group having 1 to 10 carbon atoms or an alkyl group having 1 to 4 carbon atoms, and R7 and R8 may together form a ring.
  • R10 and R11 are each independently substituted with hydrogen, an alkylene group having 1 to 10 carbon atoms, an alkenylene group having 2 to 10 carbon atoms, a hydroxyalkylene group having 1 to 10 carbon atoms, a carbonyl group and an alkoxy group having 1 to 10 carbon atoms An alkylene group having 1 to 10 carbon atoms or a bond.
  • the basic compound including at least one selected from the compounds represented by Formulas (1) to (3) included in the resist stripper composition of the present invention may be dry or wet etching, ashing, or ion implant processing. It strongly penetrates into the polymer matrix of the deteriorated or crosslinked resist under various process conditions such as to break a bond existing in or between molecules. This action of the basic compound creates an empty space in the structurally vulnerable portion of the resist remaining on the substrate, transforming the resist into an amorphous polymer gel mass so that the resist attached to the substrate can be easily removed. .
  • Examples of the basic compound represented by Chemical Formula 1 include primary amines such as methylamine, ethylamine, monoisopropylamine, n-butylamine, sec-butylamine, isobutylamine, t-butylamine, and pentylamine; Secondary such as dimethylamine, diethylamine, dipropylamine, diisopropylamine, dibutylamine, diisobutylamine, methylethylamine, methylpropylamine, methylisopropylamine, methylbutylamine, methylisobutylamine Amines; Tertiary amines such as trimethylamine, triethylamine, tripropylamine, tributylamine, tripentylamine, dimethylethylamine, methyldiethylamine and methyldipropylamine; Monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, 2-aminoethanol, 2- (ethylamino)
  • monoethanolamine, triethanolamine, 1-amino-2-propanol, 2- (2-aminoethoxy) ethanol, N-methylethanolamine, N-methyldiethanolamine, N, N-dimethylethanol amine , N, N-diethylaminoethanol and 2- (2-aminoethylamino) -1-ethanol are preferable.
  • Examples of the basic compound represented by Formula 2 include morpholine, N- (3-aminopropyl) morpholine, N- (methoxymethyl) morpholine, N- (butoxymethyl) morpholine, N- (2-hydro Oxyethyl) morpholine and the like, and these may be used alone or in combination of two or more.
  • N- (2-hydroxyethyl) morpholine is preferable.
  • Examples of the basic compound represented by Chemical Formula 3 include piperazine, 1-methylpiperazine, 2-methylpiperazine, 1,4-dimethylpiperazine, 1,4-diethylpiperazine, 1- (2-hydroxyethyl Piperazine, 1- (2-hydroxyethyl) -4-methylpiperazine, 1- (2-aminoethyl) piperazine, 1-amino-4-methylpiperazine, 1-benzylpiperazine, 1-phenyl Piperazine, N, N'-di (methoxymethyl) piperazine, N, N'-di (butoxymethyl) piperazine, di (butoxymethyl) piperazine and the like. More than one species may be used together. In particular, 1- (2-hydroxyethyl) piperazine can be preferably used.
  • the basic compound including at least one selected from the compounds represented by Formulas (1) to (3) is contained in an amount of 5 to 30% by weight based on the total weight of the composition.
  • the resist stripper composition of the present invention exhibits desirable stripping properties without a problem of insufficient resist stripping effect or a sharp increase in corrosion rate for aluminum and copper wiring.
  • the amide compound represented by Chemical Formula 4 (b) included in the resist stripper composition of the present invention is a strong alkaline aprotic polar solvent, which is very effective in decomposing and dissolving or modifying crosslinked resist polymers by dry etching. In terms of the dissolution capacity of resin, the main raw material, it has an excellent effect compared to other polar solvents.
  • amide compound represented by Formula (b) 4 include formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, N- (2-hydroxyethyl) acetamide, 3-methoxy-N, N-dimethylpropionamide, 3- (2-ethylhexyloxy) -N, N-dimethylpropionamide, 3-butoxy-N , N-dimethylpropionamide, and the like, and these may be used alone or in combination of two or more.
  • N-methylformamide, N, N-dimethylformamide, N-methylacetamide, N, N-dimethylacetamide and the like can be preferably used.
  • the content of the amide compound represented by Formula (b) 4 is preferably 20 to 80% by weight based on the total amount of the composition.
  • the content range as described above is also advantageous for the expression of the removal performance of the modified or cross-linked resist polymer by etching, etc., and at the same time advantageous in the effect of increasing the number of treatment.
  • the (c) polar solvent included in the resist stripper composition of the present invention assists the (b) amide compound to dissolve the resist polymer gelled by the (a) basic compound, and also DI rinse after resist stripping. It facilitates the removal of the stripping solution by water in the process to minimize the reprecipitation of the resist dissolved in the stripping solution. And (a) serves to improve the performance of the basic compound to penetrate the deteriorated or crosslinked resist serves to break the bond present in the molecule or between molecules.
  • Examples of the polar solvent (c) include a proton polar solvent and an aprotic polar solvent, and these may be used alone or in combination.
  • Specific examples of the proton polar solvent include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, di Ethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol monomethyl ether, polyethylene Glycol monobutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, alcohol
  • aprotic polar solvent examples include pyrrolidone compounds such as N-methyl pyrrolidone (NMP) and N-ethyl pyrrolidone; Imidazolidinone compounds, such as 1,3-dimethyl- 2-imidazolidinone and 1,3-dipropyl- 2-imidazolidinone; lactone compounds such as ⁇ -butyrolactone; Sulfoxide compounds such as dimethyl sulfoxide (DMSO) and sulfolane; Phosphate compounds such as triethyl phosphate and tributyl phosphate; Carbonate compounds, such as dimethyl carbonate and ethylene carbonate, etc. are mentioned, These can be used individually or in mixture of 2 or more types.
  • NMP N-methyl pyrrolidone
  • Imidazolidinone compounds such as 1,3-dimethyl- 2-imidazolidinone and 1,3-dipropyl- 2-imidazolidinone
  • lactone compounds such as ⁇ -but
  • the (c) polar solvent is preferably included in 10 to 70% by weight relative to the total weight of the composition.
  • the (c) polar solvent is preferably included in 10 to 70% by weight relative to the total weight of the composition.
  • the said (c) polar solvent contains 1 or more types of quantum polar solvents and 1 or more types of aprotic polar solvents. It is also preferable to include alcohols having at least one cyclic ether bond.
  • the polyol compound represented by Chemical Formula 5 included in the resist stripper composition of the present invention serves to prevent corrosion of metal wires including aluminum or copper. This polyol compound forms a bond with the metal layer under the resist to prevent the hydroxyl groups from the stripper composition from corroding the lower metal layer.
  • polyol compound represented by Formula (d) 5 examples include cyclohexane 1,4-diol, cyclohexane 1,4-dimethanol, cyclohexane 1,4-dieethanol, and the like. It may be used alone or two or more kinds together.
  • the (d) polyol compound is preferably contained in 0.05 to 20% by weight based on the total weight of the composition. When it is included in the content as described above, the desired corrosion protection effect on the metal film, such as aluminum and copper, and excellent removal ability for the resist and residue are exhibited.
  • the resist stripping composition of the present invention may further include water to increase the resist and dry etching residue removal ability through increasing the activity in the stripping solution of the (a) basic compound.
  • composition for removing a resist of the present invention may further include a surfactant in addition to the above components.
  • the surfactant increases the wettability of the substrate to allow uniform cleaning, and increases the peeling force of the resist because it increases the penetration force between the interfaces.
  • Surfactants that can be used in the present invention include anionic surfactants, cationic surfactants, and nonionic surfactants, but among these, it is particularly preferable to use nonionic surfactants having excellent wettability and less foaming. .
  • polyoxyethylene alkyl ether type polyoxyethylene alkylphenyl ether type, polyoxyethylene polyoxypropylene alkyl ether type, polyoxyethylene polyoxybutylene alkyl ether type, polyoxyethylene alkylamino ether Type, polyoxyethylene alkyl amido ether type, polyethylene glycol fatty acid ester type, sorbitan fatty acid ester type, glycerin fatty acid ester type, alkrolamide type and glycerin ester type surfactants, and these may be used alone or in combination. More than one species may be used together.
  • the surfactant is preferably included 0.001 to 1.0% by weight based on the total weight of the composition.
  • the surfactant is preferably included 0.001 to 1.0% by weight based on the total weight of the composition.
  • the resist stripping composition of the present invention is based on the total weight of the composition (a) 5 to 30% by weight of a basic compound containing at least one selected from the compounds represented by Formulas 1 to 3, (b) represented by the formula (4) It is preferred to include 20 to 80% by weight of the amide compound, 10 to 70% by weight of the polar solvent, and (d) 0.05 to 20% by weight of the polyol compound represented by the formula (5).
  • composition for removing a resist of the present invention can be prepared by mixing the above-mentioned compounds in an advantageous amount in an advantageous amount, and the mixing method is not particularly limited and various known methods can be applied without limitation.
  • the present invention provides a flat panel and a flat panel display device for a display device, which are manufactured using the resist stripper composition.
  • This invention also provides the resist peeling method characterized by using the resist stripping liquid composition of this invention.
  • the peeling method of the said resist is characterized by using the resist stripping liquid composition of this invention.
  • the resist modified and cured by the resist pattern formation and etching comprising the step of peeling from the substrate using the resist stripper composition of the present invention.
  • a dry etching process such as an etchback process or a chemical mechanical polishing (CMP) process is performed without proceeding a resist pattern forming process using a mask, and then the exposed resist film is viewed.
  • CMP chemical mechanical polishing
  • the formation, exposure, development, etching and ashing of the resist film may be performed by a method commonly known in the art.
  • Types of the resist include positive and negative g-rays, i-rays and far-ultraviolet (DUV) resists, electron beam resists, X-ray resists, ion beam resists, and the like.
  • the resist to which the composition for removing a resist of the present invention is particularly effectively applied is a photoresist film composed of a novolak-based phenol resin and a photoactive compound based on diazonaphthoquinone, and is effective for a photoresist film composed of a mixture thereof. .
  • the method of removing the resist, the modified or cured resist, and the dry etching residue on the flat panel display substrate using the resist stripper composition of the present invention includes a method of depositing a substrate coated with a resist in the stripper or a stripping solution.
  • substrate is mentioned.
  • physical treatment such as ultrasonic irradiation, rotation, or contacting a brush swinging from side to side may be used in combination.
  • the peeling liquid treatment the peeling liquid remaining on the substrate can be removed by the subsequent cleaning treatment.
  • the washing step is the same as the peeling step except that water or isopropyl alcohol is used instead of the peeling solution.
  • the peeling method may be a deposition method, a spraying method, or a deposition and spraying method.
  • the temperature as peeling conditions is usually 15 to 100 ° C, preferably 30 to 70 ° C
  • the deposition, spraying, or deposition and spraying time is usually 30 seconds to 40 minutes, Preferably from 1 to 20 minutes, but not strictly applied in the present invention, it can be modified by easy and suitable conditions by those skilled in the art.
  • the temperature of the stripper composition applied on the resist-coated substrate is less than 15 ° C., the time required for removing the modified or cured resist film may be too long.
  • the temperature of a composition exceeds 100 degreeC, the damage of the lower film layer of a resist film is feared, and difficulty in handling a peeling liquid follows.
  • the resist stripper composition of the present invention and the stripping method using the same can be used not only for removing general resists, but also for removing resists and etching residues that have been modified or cured by etching gas and high temperature.
  • the resist stripper composition of the present invention and the stripping method using the same have an advantage of excellent corrosion protection against metal wirings including aluminum or copper when used in the manufacture of flat panel displays.
  • It provides the manufacturing method of the flat panel for display apparatuses including the process of peeling the resist of the board
  • It provides the manufacturing method of the flat panel display apparatus including the process of peeling the resist of the board
  • the flat panel and flat panel display device for a display device manufactured by the above-described manufacturing method is excellent in quality because it completely removes resist during the manufacturing process and hardly causes corrosion of metal wiring including aluminum and / or copper.
  • the resist stripper composition was prepared by mixing the components and contents shown in Table 1 below.
  • NMEA N-methylethanolamine
  • NMP N-methyl pyrrolidone
  • the resist stripper composition of Examples 1 to 6 was not only excellent in the resist stripping force by wet etching, but also exhibited excellent performance in removing the resist and the etching residue after dry etching.
  • Comparative Example 1 which did not contain a basic compound, showed normal performance for the photoresist subjected to the wet etching process, but the removal effect of the resist and the etching residue after the dry etching was poor.
  • the resist stripper composition was prepared by mixing the components and contents shown in Table 3 below.
  • the resist stripper composition of Examples 7 to 9 exhibited excellent peeling ability to the wet and dry etch resist.
  • Comparative Example 2 containing no amide compound the resist removal performance on the dry etching substrate was poor.
  • BDG diethylene glycol monobutyl ether
  • a substrate exposed with Mo / Al wiring in a stripping solution composition in which 1 to 5% by weight was sequentially dissolved was immersed in the stripping solution composition at 50 ° C. for 10 minutes, and then washed and dried, followed by a scanning electron microscope (SEM, Hitach S-4700).
  • SEM scanning electron microscope
  • the resist stripper composition of Example 11 using alcohols having cyclic ether bonds as polar solvents showed a very good residue suppression ability even in the presence of a high concentration of solidified photoresist. From these results, it can be confirmed that the resist stripper composition of the present invention can process a larger number of substrates than the conventional stripper composition.
  • the resist stripper composition was prepared by mixing the components and contents shown in Table 7 below.
  • the corrosion protection ability of the metal wiring was evaluated. Specifically, the corrosion protection of the resist stripper composition of Examples 3, 11, 13, 14, and Comparative Example 4 was evaluated using a substrate exposed to Mo / Al and Cu / Mo-Ti wiring. Corrosion evaluation for the metal wiring was evaluated by using a scanning electron microscope (SEM, Hitach S-4700) after immersing the substrate in the stripper composition stock solution at 60 ° C. for 30 minutes, followed by washing and drying. It is shown in Table 8.
  • the resist stripper composition was prepared by mixing components and contents shown in Table 9 below.
  • a photoresist was applied on a 4 inch bare glass substrate to a thickness of about 2 ⁇ m.
  • a hard bake was performed at 170 ° C. for 10 minutes to prepare a substrate coated with a resist under severe conditions. Further, the substrate was cut to 1.5 cm (width) x 1.5 cm (length), and then deposited at 50 ° C. in the resist stripper composition stock solution of Examples 3, 11, 15, and 16 prepared above, followed by washing and drying. The measurement was performed to determine the time when the resist was completely peeled off and no residual resist was observed visually.
  • the measurement of the resist peeling time was performed five times for each of the prepared peeling liquid compositions, and the range of time for complete peeling is shown in Table 10 below.
  • the resist stripper composition containing the alcohol having the cyclic ether bonds of Examples 11 and 16 as a polar solvent contained the alcohol having the cyclic ether bonds of Examples 3 and 15. It turns out that the resist peeling time is remarkably shorter than the resist peeling liquid composition which is not.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
PCT/KR2010/005238 2009-08-11 2010-08-10 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 Ceased WO2011019189A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US13/387,087 US9081291B2 (en) 2009-08-11 2010-08-10 Resist stripping solution composition, and method for stripping resist by using same
JP2012524640A JP5647685B2 (ja) 2009-08-11 2010-08-10 レジスト剥離液組成物及びこれを用いたレジストの剥離方法
CN201080034160.8A CN102472985B (zh) 2009-08-11 2010-08-10 光阻剥离液组成物及使用其剥离光阻的方法

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Application Number Priority Date Filing Date Title
KR10-2009-0073762 2009-08-11
KR20090073762 2009-08-11

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WO2011019189A3 WO2011019189A3 (ko) 2011-06-23

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JP (1) JP5647685B2 (https=)
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CN103064263A (zh) * 2011-08-22 2013-04-24 东友Fine-Chem股份有限公司 抗蚀剂剥离液组合物及利用该组合物的抗蚀剂剥离方法
US20140100151A1 (en) * 2012-10-08 2014-04-10 Air Products And Chemicals Inc. Stripping and Cleaning Compositions for Removal of Thick Film Resist
KR20160118548A (ko) * 2015-04-02 2016-10-12 동우 화인켐 주식회사 레지스트 박리액 조성물
KR20170070871A (ko) * 2015-12-14 2017-06-23 삼성디스플레이 주식회사 포토 레지스트 박리제 조성물 및 이를 이용한 박막 트랜지스터 어레이의 제조 방법
TWI617902B (zh) * 2012-11-20 2018-03-11 東進世美肯股份有限公司 光阻剝離液組成物以及使用該組成物的光阻剝離方法
KR20180047671A (ko) * 2016-11-01 2018-05-10 주식회사 이엔에프테크놀로지 신너 조성물
KR20180082967A (ko) * 2017-01-11 2018-07-19 주식회사 다이셀 레지스트 제거용 조성물
KR20180129663A (ko) * 2017-05-26 2018-12-05 아라까와 가가꾸 고교 가부시끼가이샤 무연 납땜 용제용 세정제 조성물, 무연 납땜 용제의 세정 방법

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