JP5647685B2 - レジスト剥離液組成物及びこれを用いたレジストの剥離方法 - Google Patents

レジスト剥離液組成物及びこれを用いたレジストの剥離方法 Download PDF

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Publication number
JP5647685B2
JP5647685B2 JP2012524640A JP2012524640A JP5647685B2 JP 5647685 B2 JP5647685 B2 JP 5647685B2 JP 2012524640 A JP2012524640 A JP 2012524640A JP 2012524640 A JP2012524640 A JP 2012524640A JP 5647685 B2 JP5647685 B2 JP 5647685B2
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JP
Japan
Prior art keywords
resist
group
carbon atoms
resist stripping
ether
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JP2012524640A
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English (en)
Japanese (ja)
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JP2013501958A (ja
JP2013501958A5 (https=
Inventor
ミョン キュ パク
ミョン キュ パク
テ ヒ キム
テ ヒ キム
ジョン ヒュン キム
ジョン ヒュン キム
スン ヨン イ
スン ヨン イ
ビョン ムク キム
ビョン ムク キム
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Dongwoo Fine Chem Co Ltd
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Dongwoo Fine Chem Co Ltd
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Publication of JP2013501958A publication Critical patent/JP2013501958A/ja
Publication of JP2013501958A5 publication Critical patent/JP2013501958A5/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
JP2012524640A 2009-08-11 2010-08-10 レジスト剥離液組成物及びこれを用いたレジストの剥離方法 Active JP5647685B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2009-0073762 2009-08-11
KR20090073762 2009-08-11
PCT/KR2010/005238 WO2011019189A2 (ko) 2009-08-11 2010-08-10 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법

Publications (3)

Publication Number Publication Date
JP2013501958A JP2013501958A (ja) 2013-01-17
JP2013501958A5 JP2013501958A5 (https=) 2014-11-20
JP5647685B2 true JP5647685B2 (ja) 2015-01-07

Family

ID=43586635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012524640A Active JP5647685B2 (ja) 2009-08-11 2010-08-10 レジスト剥離液組成物及びこれを用いたレジストの剥離方法

Country Status (6)

Country Link
US (1) US9081291B2 (https=)
JP (1) JP5647685B2 (https=)
KR (1) KR20110016418A (https=)
CN (1) CN102472985B (https=)
TW (1) TWI519910B (https=)
WO (1) WO2011019189A2 (https=)

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KR102119438B1 (ko) * 2013-10-30 2020-06-08 삼성디스플레이 주식회사 박리액 및 이를 이용한 표시 장치의 제조방법
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KR101586453B1 (ko) * 2014-08-20 2016-01-21 주식회사 엘지화학 포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법
TW201627781A (zh) * 2014-10-14 2016-08-01 Ａｚ電子材料盧森堡有限公司 光阻圖案處理用組成物及使用其之圖案形成方法
KR102347618B1 (ko) * 2015-04-02 2022-01-05 동우 화인켐 주식회사 레지스트 박리액 조성물
KR102529951B1 (ko) * 2015-12-14 2023-05-08 삼성디스플레이 주식회사 포토 레지스트 박리제 조성물 및 이를 이용한 박막 트랜지스터 어레이의 제조 방법
KR102422264B1 (ko) * 2016-03-11 2022-07-18 주식회사 이엔에프테크놀로지 신너 조성물
KR102433114B1 (ko) * 2016-05-02 2022-08-17 주식회사 이엔에프테크놀로지 신너 조성물
WO2018058341A1 (en) * 2016-09-28 2018-04-05 Dow Global Technologies Llc Sulfoxide/glycol ether based solvents for use in the electronics industry
KR102465604B1 (ko) * 2016-11-01 2022-11-11 주식회사 이엔에프테크놀로지 신너 조성물
CN106773562A (zh) * 2016-12-23 2017-05-31 昆山艾森半导体材料有限公司 一种去除az光刻胶的去胶液
CN108255027B (zh) * 2016-12-28 2024-04-12 安集微电子（上海）有限公司 一种光刻胶清洗液
JP6899220B2 (ja) * 2017-01-11 2021-07-07 株式会社ダイセル レジスト除去用組成物
CN110178204B (zh) * 2017-01-17 2022-11-04 株式会社大赛璐 半导体基板清洗剂
CN108424818A (zh) * 2017-02-14 2018-08-21 东友精细化工有限公司 掩模清洗液组合物
CN108693717A (zh) * 2017-03-29 2018-10-23 东友精细化工有限公司 抗蚀剂剥离液组合物
CN108929808B (zh) * 2017-05-26 2020-11-27 荒川化学工业株式会社 无铅软钎料焊剂用清洗剂组合物、无铅软钎料焊剂的清洗方法
CN107271450A (zh) * 2017-06-20 2017-10-20 深圳市华星光电技术有限公司 一种聚酰胺/氮化硅膜致密性的检测方法
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Also Published As

Publication number Publication date
KR20110016418A (ko) 2011-02-17
WO2011019189A2 (ko) 2011-02-17
CN102472985B (zh) 2014-01-08
JP2013501958A (ja) 2013-01-17
TW201113652A (en) 2011-04-16
CN102472985A (zh) 2012-05-23
TWI519910B (zh) 2016-02-01
US20120181248A1 (en) 2012-07-19
WO2011019189A3 (ko) 2011-06-23
US9081291B2 (en) 2015-07-14

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