WO2021100651A1 - 洗浄剤組成物及び洗浄方法 - Google Patents
洗浄剤組成物及び洗浄方法 Download PDFInfo
- Publication number
- WO2021100651A1 WO2021100651A1 PCT/JP2020/042594 JP2020042594W WO2021100651A1 WO 2021100651 A1 WO2021100651 A1 WO 2021100651A1 JP 2020042594 W JP2020042594 W JP 2020042594W WO 2021100651 A1 WO2021100651 A1 WO 2021100651A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- group
- acid amide
- units
- cleaning
- composition according
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 174
- 239000012459 cleaning agent Substances 0.000 title claims abstract description 37
- 238000004140 cleaning Methods 0.000 title claims description 48
- 238000000034 method Methods 0.000 title claims description 26
- 239000000853 adhesive Substances 0.000 claims abstract description 95
- 230000001070 adhesive effect Effects 0.000 claims abstract description 95
- 239000003960 organic solvent Substances 0.000 claims abstract description 41
- 239000002904 solvent Substances 0.000 claims abstract description 33
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims abstract description 28
- 150000001408 amides Chemical class 0.000 claims abstract description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 27
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims abstract description 11
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims abstract description 8
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims abstract description 6
- -1 alkylene glycol dialkyl ether Chemical class 0.000 claims description 189
- 239000000758 substrate Substances 0.000 claims description 95
- 239000003599 detergent Substances 0.000 claims description 69
- 239000004065 semiconductor Substances 0.000 claims description 49
- 125000004432 carbon atom Chemical group C* 0.000 claims description 33
- 125000000217 alkyl group Chemical group 0.000 claims description 32
- MBHINSULENHCMF-UHFFFAOYSA-N n,n-dimethylpropanamide Chemical compound CCC(=O)N(C)C MBHINSULENHCMF-UHFFFAOYSA-N 0.000 claims description 17
- 239000012790 adhesive layer Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 15
- FPGGTKZVZWFYPV-UHFFFAOYSA-M tetrabutylammonium fluoride Chemical compound [F-].CCCC[N+](CCCC)(CCCC)CCCC FPGGTKZVZWFYPV-UHFFFAOYSA-M 0.000 claims description 14
- GXMIHVHJTLPVKL-UHFFFAOYSA-N n,n,2-trimethylpropanamide Chemical compound CC(C)C(=O)N(C)C GXMIHVHJTLPVKL-UHFFFAOYSA-N 0.000 claims description 13
- 238000012545 processing Methods 0.000 claims description 12
- 125000004122 cyclic group Chemical group 0.000 claims description 11
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 9
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims description 9
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 5
- 150000002367 halogens Chemical class 0.000 claims description 5
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 5
- YKOQQFDCCBKROY-UHFFFAOYSA-N n,n-diethylpropanamide Chemical compound CCN(CC)C(=O)CC YKOQQFDCCBKROY-UHFFFAOYSA-N 0.000 claims description 5
- VIJUZNJJLALGNJ-UHFFFAOYSA-N n,n-dimethylbutanamide Chemical compound CCCC(=O)N(C)C VIJUZNJJLALGNJ-UHFFFAOYSA-N 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- CDQSTBHGKNNPSY-UHFFFAOYSA-N n,n-diethylbutanamide Chemical compound CCCC(=O)N(CC)CC CDQSTBHGKNNPSY-UHFFFAOYSA-N 0.000 claims description 4
- MOVBJUGHBJJKOW-UHFFFAOYSA-N methyl 2-amino-5-methoxybenzoate Chemical compound COC(=O)C1=CC(OC)=CC=C1N MOVBJUGHBJJKOW-UHFFFAOYSA-N 0.000 claims description 3
- CLJWSVLSCYWCMP-UHFFFAOYSA-N n,n-diethyl-2-methylpropanamide Chemical compound CCN(CC)C(=O)C(C)C CLJWSVLSCYWCMP-UHFFFAOYSA-N 0.000 claims description 3
- ZJBIJOORRHXJDN-UHFFFAOYSA-N n-ethyl-n,2-dimethylpropanamide Chemical compound CCN(C)C(=O)C(C)C ZJBIJOORRHXJDN-UHFFFAOYSA-N 0.000 claims description 3
- GHVUKOCVBVUUGS-UHFFFAOYSA-N n-ethyl-n-methylpropanamide Chemical compound CCN(C)C(=O)CC GHVUKOCVBVUUGS-UHFFFAOYSA-N 0.000 claims description 3
- QSUJAUYJBJRLKV-UHFFFAOYSA-M tetraethylazanium;fluoride Chemical compound [F-].CC[N+](CC)(CC)CC QSUJAUYJBJRLKV-UHFFFAOYSA-M 0.000 claims description 3
- POSYVRHKTFDJTR-UHFFFAOYSA-M tetrapropylazanium;fluoride Chemical compound [F-].CCC[N+](CCC)(CCC)CCC POSYVRHKTFDJTR-UHFFFAOYSA-M 0.000 claims description 3
- PPWDJHGZKHWDAD-UHFFFAOYSA-N 2-ethyl-2-methylpentanamide Chemical compound CCCC(C)(CC)C(N)=O PPWDJHGZKHWDAD-UHFFFAOYSA-N 0.000 claims description 2
- ONLWPHANFDORGA-UHFFFAOYSA-N 2-ethyl-n-methylbutanamide Chemical compound CCC(CC)C(=O)NC ONLWPHANFDORGA-UHFFFAOYSA-N 0.000 claims description 2
- 150000001720 carbohydrates Chemical class 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims 1
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 abstract 1
- VEPTXBCIDSFGBF-UHFFFAOYSA-M tetrabutylazanium;fluoride;trihydrate Chemical compound O.O.O.[F-].CCCC[N+](CCCC)(CCCC)CCCC VEPTXBCIDSFGBF-UHFFFAOYSA-M 0.000 description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 29
- 229910052710 silicon Inorganic materials 0.000 description 28
- 235000012431 wafers Nutrition 0.000 description 27
- 229920001296 polysiloxane Polymers 0.000 description 20
- 239000010408 film Substances 0.000 description 19
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 19
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 19
- 239000010703 silicon Substances 0.000 description 18
- 125000003700 epoxy group Chemical group 0.000 description 17
- 229920004482 WACKER® Polymers 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 15
- 239000000047 product Substances 0.000 description 15
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 12
- 125000003342 alkenyl group Chemical group 0.000 description 11
- 239000004205 dimethyl polysiloxane Substances 0.000 description 11
- 150000002430 hydrocarbons Chemical class 0.000 description 11
- 238000005498 polishing Methods 0.000 description 11
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 239000003054 catalyst Substances 0.000 description 10
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 10
- 239000004593 Epoxy Substances 0.000 description 9
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 9
- 238000006459 hydrosilylation reaction Methods 0.000 description 8
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 8
- 238000000576 coating method Methods 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- 239000011247 coating layer Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 229930195734 saturated hydrocarbon Natural products 0.000 description 6
- 125000002947 alkylene group Chemical group 0.000 description 5
- 125000006165 cyclic alkyl group Chemical group 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 5
- 239000004215 Carbon black (E152) Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 4
- 150000001450 anions Chemical class 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 125000000753 cycloalkyl group Chemical group 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 125000001033 ether group Chemical group 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 239000003112 inhibitor Substances 0.000 description 4
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 4
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 4
- SKTCDJAMAYNROS-UHFFFAOYSA-N methoxycyclopentane Chemical compound COC1CCCC1 SKTCDJAMAYNROS-UHFFFAOYSA-N 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- CLSUSRZJUQMOHH-UHFFFAOYSA-L platinum dichloride Chemical compound Cl[Pt]Cl CLSUSRZJUQMOHH-UHFFFAOYSA-L 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 4
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 4
- GWHJZXXIDMPWGX-UHFFFAOYSA-N 1,2,4-trimethylbenzene Chemical compound CC1=CC=C(C)C(C)=C1 GWHJZXXIDMPWGX-UHFFFAOYSA-N 0.000 description 3
- QYLFHLNFIHBCPR-UHFFFAOYSA-N 1-ethynylcyclohexan-1-ol Chemical compound C#CC1(O)CCCCC1 QYLFHLNFIHBCPR-UHFFFAOYSA-N 0.000 description 3
- 0 C[Si]O[Si](C)(C)Cl* Chemical compound C[Si]O[Si](C)(C)Cl* 0.000 description 3
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 3
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 125000000962 organic group Chemical group 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 125000001453 quaternary ammonium group Chemical group 0.000 description 3
- 125000005372 silanol group Chemical group 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- FYGHSUNMUKGBRK-UHFFFAOYSA-N 1,2,3-trimethylbenzene Chemical compound CC1=CC=CC(C)=C1C FYGHSUNMUKGBRK-UHFFFAOYSA-N 0.000 description 2
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 2
- JRLPEMVDPFPYPJ-UHFFFAOYSA-N 1-ethyl-4-methylbenzene Chemical compound CCC1=CC=C(C)C=C1 JRLPEMVDPFPYPJ-UHFFFAOYSA-N 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 229920005601 base polymer Polymers 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- VKCYHJWLYTUGCC-UHFFFAOYSA-N nonan-2-one Chemical compound CCCCCCCC(C)=O VKCYHJWLYTUGCC-UHFFFAOYSA-N 0.000 description 2
- BKIMMITUMNQMOS-UHFFFAOYSA-N nonane Chemical compound CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- CFJYNSNXFXLKNS-UHFFFAOYSA-N p-menthane Chemical compound CC(C)C1CCC(C)CC1 CFJYNSNXFXLKNS-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 229920002545 silicone oil Polymers 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000006228 supernatant Substances 0.000 description 2
- 125000005207 tetraalkylammonium group Chemical group 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 2
- GJEZBVHHZQAEDB-SYDPRGILSA-N (1s,5r)-6-oxabicyclo[3.1.0]hexane Chemical compound C1CC[C@H]2O[C@H]21 GJEZBVHHZQAEDB-SYDPRGILSA-N 0.000 description 1
- 125000006079 1,1,2-trimethyl-2-propenyl group Chemical group 0.000 description 1
- 125000006059 1,1-dimethyl-2-butenyl group Chemical group 0.000 description 1
- 125000006033 1,1-dimethyl-2-propenyl group Chemical group 0.000 description 1
- 125000006060 1,1-dimethyl-3-butenyl group Chemical group 0.000 description 1
- RBACIKXCRWGCBB-UHFFFAOYSA-N 1,2-Epoxybutane Chemical group CCC1CO1 RBACIKXCRWGCBB-UHFFFAOYSA-N 0.000 description 1
- CHTMGMOOSROXRD-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC.CCOCCOCC CHTMGMOOSROXRD-UHFFFAOYSA-N 0.000 description 1
- VPBZZPOGZPKYKX-UHFFFAOYSA-N 1,2-diethoxypropane Chemical compound CCOCC(C)OCC VPBZZPOGZPKYKX-UHFFFAOYSA-N 0.000 description 1
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 description 1
- 125000006061 1,2-dimethyl-1-butenyl group Chemical group 0.000 description 1
- 125000006034 1,2-dimethyl-1-propenyl group Chemical group 0.000 description 1
- 125000006062 1,2-dimethyl-2-butenyl group Chemical group 0.000 description 1
- 125000006035 1,2-dimethyl-2-propenyl group Chemical group 0.000 description 1
- 125000006063 1,2-dimethyl-3-butenyl group Chemical group 0.000 description 1
- PVMMVWNXKOSPRB-UHFFFAOYSA-N 1,2-dipropoxypropane Chemical compound CCCOCC(C)OCCC PVMMVWNXKOSPRB-UHFFFAOYSA-N 0.000 description 1
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
- 125000006064 1,3-dimethyl-1-butenyl group Chemical group 0.000 description 1
- 125000006065 1,3-dimethyl-2-butenyl group Chemical group 0.000 description 1
- 125000006066 1,3-dimethyl-3-butenyl group Chemical group 0.000 description 1
- VDFVNEFVBPFDSB-UHFFFAOYSA-N 1,3-dioxane Chemical compound C1COCOC1 VDFVNEFVBPFDSB-UHFFFAOYSA-N 0.000 description 1
- WNXJIVFYUVYPPR-UHFFFAOYSA-N 1,3-dioxolane Chemical compound C1COCO1 WNXJIVFYUVYPPR-UHFFFAOYSA-N 0.000 description 1
- FZTLLUYFWAOGGB-UHFFFAOYSA-N 1,4-dioxane dioxane Chemical compound C1COCCO1.C1COCCO1 FZTLLUYFWAOGGB-UHFFFAOYSA-N 0.000 description 1
- GDXHBFHOEYVPED-UHFFFAOYSA-N 1-(2-butoxyethoxy)butane Chemical compound CCCCOCCOCCCC GDXHBFHOEYVPED-UHFFFAOYSA-N 0.000 description 1
- LWCFXYMSEGQWNB-UHFFFAOYSA-N 1-Methyl-4-(1-methylpropyl)-benzene Chemical compound CCC(C)C1=CC=C(C)C=C1 LWCFXYMSEGQWNB-UHFFFAOYSA-N 0.000 description 1
- 125000004973 1-butenyl group Chemical group C(=CCC)* 0.000 description 1
- SBBKUBSYOVDBBC-UHFFFAOYSA-N 1-butyl-4-methylbenzene Chemical compound CCCCC1=CC=C(C)C=C1 SBBKUBSYOVDBBC-UHFFFAOYSA-N 0.000 description 1
- 125000006433 1-ethyl cyclopropyl group Chemical group [H]C([H])([H])C([H])([H])C1(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000006073 1-ethyl-1-butenyl group Chemical group 0.000 description 1
- 125000006074 1-ethyl-2-butenyl group Chemical group 0.000 description 1
- 125000006081 1-ethyl-2-methyl-1-propenyl group Chemical group 0.000 description 1
- 125000006082 1-ethyl-2-methyl-2-propenyl group Chemical group 0.000 description 1
- 125000006075 1-ethyl-3-butenyl group Chemical group 0.000 description 1
- 125000006039 1-hexenyl group Chemical group 0.000 description 1
- 125000006438 1-i-propyl cyclopropyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C1(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000006432 1-methyl cyclopropyl group Chemical group [H]C([H])([H])C1(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000006025 1-methyl-1-butenyl group Chemical group 0.000 description 1
- 125000006044 1-methyl-1-pentenyl group Chemical group 0.000 description 1
- 125000006019 1-methyl-1-propenyl group Chemical group 0.000 description 1
- 125000006028 1-methyl-2-butenyl group Chemical group 0.000 description 1
- 125000006048 1-methyl-2-pentenyl group Chemical group 0.000 description 1
- 125000006021 1-methyl-2-propenyl group Chemical group 0.000 description 1
- 125000006030 1-methyl-3-butenyl group Chemical group 0.000 description 1
- 125000006052 1-methyl-3-pentenyl group Chemical group 0.000 description 1
- VCGBZXLLPCGFQM-UHFFFAOYSA-N 1-methyl-4-(2-methylpropyl)benzene Chemical compound CC(C)CC1=CC=C(C)C=C1 VCGBZXLLPCGFQM-UHFFFAOYSA-N 0.000 description 1
- 125000006055 1-methyl-4-pentenyl group Chemical group 0.000 description 1
- 125000006439 1-n-propyl cyclopropyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C1(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000006023 1-pentenyl group Chemical group 0.000 description 1
- 125000006017 1-propenyl group Chemical group 0.000 description 1
- QCWXDVFBZVHKLV-UHFFFAOYSA-N 1-tert-butyl-4-methylbenzene Chemical compound CC1=CC=C(C(C)(C)C)C=C1 QCWXDVFBZVHKLV-UHFFFAOYSA-N 0.000 description 1
- REXZYVQYOOPWQD-UHFFFAOYSA-N 10-oxabicyclo[7.1.0]decane Chemical compound C1CCCCCCC2OC21 REXZYVQYOOPWQD-UHFFFAOYSA-N 0.000 description 1
- AFCZSFUPWLSMSZ-UHFFFAOYSA-N 11-oxabicyclo[8.1.0]undecane Chemical compound C1CCCCCCCC2OC21 AFCZSFUPWLSMSZ-UHFFFAOYSA-N 0.000 description 1
- 125000006067 2,2-dimethyl-3-butenyl group Chemical group 0.000 description 1
- 125000006068 2,3-dimethyl-1-butenyl group Chemical group 0.000 description 1
- 125000006069 2,3-dimethyl-2-butenyl group Chemical group 0.000 description 1
- 125000006070 2,3-dimethyl-3-butenyl group Chemical group 0.000 description 1
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 1
- 125000004974 2-butenyl group Chemical group C(C=CC)* 0.000 description 1
- WHNBDXQTMPYBAT-UHFFFAOYSA-N 2-butyloxirane Chemical group CCCCC1CO1 WHNBDXQTMPYBAT-UHFFFAOYSA-N 0.000 description 1
- 125000006076 2-ethyl-1-butenyl group Chemical group 0.000 description 1
- 125000006077 2-ethyl-2-butenyl group Chemical group 0.000 description 1
- 125000006078 2-ethyl-3-butenyl group Chemical group 0.000 description 1
- GXOYTMXAKFMIRK-UHFFFAOYSA-N 2-heptyloxirane Chemical group CCCCCCCC1CO1 GXOYTMXAKFMIRK-UHFFFAOYSA-N 0.000 description 1
- 125000006040 2-hexenyl group Chemical group 0.000 description 1
- NJWSNNWLBMSXQR-UHFFFAOYSA-N 2-hexyloxirane Chemical group CCCCCCC1CO1 NJWSNNWLBMSXQR-UHFFFAOYSA-N 0.000 description 1
- 125000006026 2-methyl-1-butenyl group Chemical group 0.000 description 1
- 125000006045 2-methyl-1-pentenyl group Chemical group 0.000 description 1
- 125000006029 2-methyl-2-butenyl group Chemical group 0.000 description 1
- 125000006049 2-methyl-2-pentenyl group Chemical group 0.000 description 1
- 125000006022 2-methyl-2-propenyl group Chemical group 0.000 description 1
- 125000006031 2-methyl-3-butenyl group Chemical group 0.000 description 1
- 125000006053 2-methyl-3-pentenyl group Chemical group 0.000 description 1
- 125000006056 2-methyl-4-pentenyl group Chemical group 0.000 description 1
- GTJOHISYCKPIMT-UHFFFAOYSA-N 2-methylundecane Chemical compound CCCCCCCCCC(C)C GTJOHISYCKPIMT-UHFFFAOYSA-N 0.000 description 1
- BHZBVWCLMYQFQX-UHFFFAOYSA-N 2-octadecyloxirane Chemical group CCCCCCCCCCCCCCCCCCC1CO1 BHZBVWCLMYQFQX-UHFFFAOYSA-N 0.000 description 1
- AAMHBRRZYSORSH-UHFFFAOYSA-N 2-octyloxirane Chemical group CCCCCCCCC1CO1 AAMHBRRZYSORSH-UHFFFAOYSA-N 0.000 description 1
- 125000006024 2-pentenyl group Chemical group 0.000 description 1
- NMOFYYYCFRVWBK-UHFFFAOYSA-N 2-pentyloxirane Chemical group CCCCCC1CO1 NMOFYYYCFRVWBK-UHFFFAOYSA-N 0.000 description 1
- SYURNNNQIFDVCA-UHFFFAOYSA-N 2-propyloxirane Chemical group CCCC1CO1 SYURNNNQIFDVCA-UHFFFAOYSA-N 0.000 description 1
- 125000006071 3,3-dimethyl-1-butenyl group Chemical group 0.000 description 1
- 125000004975 3-butenyl group Chemical group C(CC=C)* 0.000 description 1
- 125000006041 3-hexenyl group Chemical group 0.000 description 1
- 125000006027 3-methyl-1-butenyl group Chemical group 0.000 description 1
- 125000006046 3-methyl-1-pentenyl group Chemical group 0.000 description 1
- 125000006050 3-methyl-2-pentenyl group Chemical group 0.000 description 1
- 125000006032 3-methyl-3-butenyl group Chemical group 0.000 description 1
- 125000006054 3-methyl-3-pentenyl group Chemical group 0.000 description 1
- 125000006057 3-methyl-4-pentenyl group Chemical group 0.000 description 1
- QYXVDGZUXHFXTO-UHFFFAOYSA-L 3-oxobutanoate;platinum(2+) Chemical compound [Pt+2].CC(=O)CC([O-])=O.CC(=O)CC([O-])=O QYXVDGZUXHFXTO-UHFFFAOYSA-L 0.000 description 1
- LWMDPZVQAMQFOC-UHFFFAOYSA-N 4-butylpyridine Chemical compound CCCCC1=CC=NC=C1 LWMDPZVQAMQFOC-UHFFFAOYSA-N 0.000 description 1
- 125000006042 4-hexenyl group Chemical group 0.000 description 1
- 125000006047 4-methyl-1-pentenyl group Chemical group 0.000 description 1
- 125000006051 4-methyl-2-pentenyl group Chemical group 0.000 description 1
- 125000003119 4-methyl-3-pentenyl group Chemical group [H]\C(=C(/C([H])([H])[H])C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000006058 4-methyl-4-pentenyl group Chemical group 0.000 description 1
- 125000006043 5-hexenyl group Chemical group 0.000 description 1
- MLOZFLXCWGERSM-UHFFFAOYSA-N 8-oxabicyclo[5.1.0]octane Chemical compound C1CCCCC2OC21 MLOZFLXCWGERSM-UHFFFAOYSA-N 0.000 description 1
- MELPJGOMEMRMPL-UHFFFAOYSA-N 9-oxabicyclo[6.1.0]nonane Chemical compound C1CCCCCC2OC21 MELPJGOMEMRMPL-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- NBDVHCIWWZHAHH-UHFFFAOYSA-N CC(C)N(C1CCCC1)O Chemical compound CC(C)N(C1CCCC1)O NBDVHCIWWZHAHH-UHFFFAOYSA-N 0.000 description 1
- ZJMWRROPUADPEA-UHFFFAOYSA-N CCC(C)c1ccccc1 Chemical compound CCC(C)c1ccccc1 ZJMWRROPUADPEA-UHFFFAOYSA-N 0.000 description 1
- 101100454128 Caenorhabditis elegans ksr-1 gene Proteins 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- SGVYKUFIHHTIFL-UHFFFAOYSA-N Isobutylhexyl Natural products CCCCCCCC(C)C SGVYKUFIHHTIFL-UHFFFAOYSA-N 0.000 description 1
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- PWATWSYOIIXYMA-UHFFFAOYSA-N Pentylbenzene Chemical compound CCCCCC1=CC=CC=C1 PWATWSYOIIXYMA-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000005210 alkyl ammonium group Chemical group 0.000 description 1
- 125000000304 alkynyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 150000001602 bicycloalkyls Chemical group 0.000 description 1
- 150000003519 bicyclobutyls Chemical group 0.000 description 1
- 150000005350 bicyclononyls Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- FSIJKGMIQTVTNP-UHFFFAOYSA-N bis(ethenyl)-methyl-trimethylsilyloxysilane Chemical compound C[Si](C)(C)O[Si](C)(C=C)C=C FSIJKGMIQTVTNP-UHFFFAOYSA-N 0.000 description 1
- GKRALBJDXHXFNB-UHFFFAOYSA-N butoxycyclohexane Chemical compound CCCCOC1CCCCC1 GKRALBJDXHXFNB-UHFFFAOYSA-N 0.000 description 1
- LALHWYBLLSTBLQ-UHFFFAOYSA-N butoxycyclopentane Chemical compound CCCCOC1CCCC1 LALHWYBLLSTBLQ-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 150000001733 carboxylic acid esters Chemical class 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 125000000582 cycloheptyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- ARUKYTASOALXFG-UHFFFAOYSA-N cycloheptylcycloheptane Chemical group C1CCCCCC1C1CCCCCC1 ARUKYTASOALXFG-UHFFFAOYSA-N 0.000 description 1
- ZWAJLVLEBYIOTI-UHFFFAOYSA-N cyclohexene oxide Chemical compound C1CCCC2OC21 ZWAJLVLEBYIOTI-UHFFFAOYSA-N 0.000 description 1
- WVIIMZNLDWSIRH-UHFFFAOYSA-N cyclohexylcyclohexane Chemical group C1CCCCC1C1CCCCC1 WVIIMZNLDWSIRH-UHFFFAOYSA-N 0.000 description 1
- OCDXZFSOHJRGIL-UHFFFAOYSA-N cyclohexyloxycyclohexane Chemical compound C1CCCCC1OC1CCCCC1 OCDXZFSOHJRGIL-UHFFFAOYSA-N 0.000 description 1
- NLUNLVTVUDIHFE-UHFFFAOYSA-N cyclooctylcyclooctane Chemical group C1CCCCCCC1C1CCCCCCC1 NLUNLVTVUDIHFE-UHFFFAOYSA-N 0.000 description 1
- MAWOHFOSAIXURX-UHFFFAOYSA-N cyclopentylcyclopentane Chemical group C1CCCC1C1CCCC1 MAWOHFOSAIXURX-UHFFFAOYSA-N 0.000 description 1
- WWKKBFVZHUKKQZ-UHFFFAOYSA-N cyclopentyloxycyclohexane Chemical compound C1CCCC1OC1CCCCC1 WWKKBFVZHUKKQZ-UHFFFAOYSA-N 0.000 description 1
- BOTLEXFFFSMRLQ-UHFFFAOYSA-N cyclopentyloxycyclopentane Chemical compound C1CCCC1OC1CCCC1 BOTLEXFFFSMRLQ-UHFFFAOYSA-N 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000007922 dissolution test Methods 0.000 description 1
- UZZWBUYVTBPQIV-UHFFFAOYSA-N dme dimethoxyethane Chemical compound COCCOC.COCCOC UZZWBUYVTBPQIV-UHFFFAOYSA-N 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- AOWTYVFGMCEIRN-UHFFFAOYSA-N ethoxycyclopentane Chemical compound CCOC1CCCC1 AOWTYVFGMCEIRN-UHFFFAOYSA-N 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical compound [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 description 1
- 229940006461 iodide ion Drugs 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- VKPSKYDESGTTFR-UHFFFAOYSA-N isododecane Natural products CC(C)(C)CC(C)CC(C)(C)C VKPSKYDESGTTFR-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229940087305 limonene Drugs 0.000 description 1
- 235000001510 limonene Nutrition 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- GHDIHPNJQVDFBL-UHFFFAOYSA-N methoxycyclohexane Chemical compound COC1CCCCC1 GHDIHPNJQVDFBL-UHFFFAOYSA-N 0.000 description 1
- SSJOFYZNKQFVBK-UHFFFAOYSA-N n-ethyl-n-methylbutanamide Chemical compound CCCC(=O)N(C)CC SSJOFYZNKQFVBK-UHFFFAOYSA-N 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- WSGCRAOTEDLMFQ-UHFFFAOYSA-N nonan-5-one Chemical compound CCCCC(=O)CCCC WSGCRAOTEDLMFQ-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- AHHWIHXENZJRFG-UHFFFAOYSA-N oxetane Chemical compound C1COC1 AHHWIHXENZJRFG-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229930004008 p-menthane Natural products 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000003880 polar aprotic solvent Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 125000001844 prenyl group Chemical group [H]C([*])([H])C([H])=C(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- XSXHNHNXEICRHE-UHFFFAOYSA-N propan-2-yloxycyclopentane Chemical compound CC(C)OC1CCCC1 XSXHNHNXEICRHE-UHFFFAOYSA-N 0.000 description 1
- MAHQPELWLUTHNP-UHFFFAOYSA-N propoxycyclohexane Chemical compound CCCOC1CCCCC1 MAHQPELWLUTHNP-UHFFFAOYSA-N 0.000 description 1
- HEPMXJPHYFIYFP-UHFFFAOYSA-N propoxycyclopentane Chemical compound CCCOC1CCCC1 HEPMXJPHYFIYFP-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/62—Quaternary ammonium compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/52—Carboxylic amides, alkylolamides or imides or their condensation products with alkylene oxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/24—Organic compounds containing halogen
- C11D3/245—Organic compounds containing halogen containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/28—Organic compounds containing halogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3263—Amides or imides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/24—Hydrocarbons
- C11D7/247—Hydrocarbons aromatic
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/263—Ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/267—Heterocyclic compounds
Definitions
- the present invention relates to a detergent composition and a cleaning method.
- semiconductor wafers that have been integrated in a two-dimensional plane direction are required to have a semiconductor integration technology in which planes are further integrated (laminated) in a three-dimensional direction for the purpose of further integration.
- This three-dimensional lamination is a technique for integrating in multiple layers while connecting with a through silicon via (TSV: through silicon via).
- TSV through silicon via
- the unthinned semiconductor wafer (also simply referred to as a wafer here) is adhered to the support for polishing with a polishing device.
- the adhesion at that time is called temporary adhesion because it must be easily peeled off after polishing.
- This temporary bond must be easily removed from the support, and the thinned semiconductor wafer may be cut or deformed if a large force is applied to the removal, so that such a situation does not occur. Easy to remove.
- performance is required to have high stress (strong adhesive force) in the plane direction during polishing and low stress (weak adhesive force) in the vertical direction during removal.
- the temperature may reach a high temperature of 150 ° C. or higher in the processing process, and heat resistance is also required.
- polysiloxane-based adhesives capable of having these performances are mainly used as temporary adhesives.
- adhesive residue often remains on the surface of the substrate after the thinned substrate is peeled off, but in order to avoid problems in the subsequent steps.
- a cleaning agent composition for removing this residue and cleaning the surface of a semiconductor substrate has been developed (for example, Patent Documents 1 and 2), and in the recent semiconductor field, a new cleaning agent composition has been developed. There is always a desire for.
- Patent Document 1 discloses a siloxane resin remover containing a polar aprotic solvent and a quaternary ammonium hydroxide
- Patent Document 2 discloses a cured resin remover containing alkyl-ammonium fluoride.
- the present invention has been made in view of the above circumstances, and is a cleaning agent composition that exhibits good detergency with respect to the adhesive residue after peeling off the temporary adhesion by the adhesive layer obtained by using, for example, a polysiloxane-based adhesive. It is an object of the present invention to provide a cleaning method using a product and such a cleaning agent composition.
- Patent Documents 3 to 5 disclose a photoresist stripping solution composition and a detergent composition using N, N-dimethylpropionamide, but all of the documents disclose the constitution of the present invention and the composition thereof. The effect is not specifically disclosed.
- a cleaning composition used to remove adhesive residues contains a quaternary ammonium salt and a solvent containing a primary organic solvent and a secondary organic solvent.
- the first organic solvent is an acid amide derivative represented by the formula (Z).
- the second organic solvent is another organic solvent different from the acid amide derivative.
- a detergent composition characterized in that the water content is less than 4.0% by mass. (Wherein, R 0 represents an ethyl group, a propyl group or an isopropyl group, R A and R B are, independently of one another,. Represents an alkyl group having 1 to 4 carbon atoms) 2.
- the acid amide derivatives are N, N-dimethylpropionamide, N, N-diethylpropionamide, N-ethyl-N-methylpropionamide, N, N-dimethylbutyric acid amide, N, N-diethylbutyric acid amide, N- One cleaning agent composition containing at least one selected from the group consisting of ethyl-N-methylbutyric acid amide, N, N-dimethylisobutyric acid amide, N, N-diethylisobutyric acid amide and N-ethyl-N-methylisobutyric acid amide. , 3. 3.
- the acid amide derivatives are N, N-dimethylpropionamide, N, N-diethylpropionamide, N, N-dimethylbutyric acid amide, N, N-diethylbutyric acid amide, N, N-dimethylisobutyric acid amide and N, N-. 2 cleaning agent compositions containing at least one selected from the group consisting of diethylisobutyric acid amides, 4. 3 detergent compositions, wherein the acid amide derivative comprises at least one selected from the group consisting of N, N-dimethylpropionic amide and N, N-dimethylisobutyric acid amide. 5.
- the detergent composition of 7 containing at least one selected from the group consisting of tetramethylammonium fluoride, tetraethylammonium fluoride, tetrapropylammonium fluoride and tetrabutylammonium fluoride.
- the detergent composition according to any one of 1 to 8 wherein the second organic solvent contains at least one selected from the group consisting of an alkylene glycol dialkyl ether, an aromatic hydrocarbon compound and a cyclic structure-containing ether compound.
- the solvent is only an organic solvent.
- a cleaning method comprising removing the adhesive residue remaining on the substrate by using the cleaning agent composition according to any one of 15.1 to 14. 16.
- the first step of manufacturing a laminate including a semiconductor substrate, a support substrate, and an adhesive layer obtained from an adhesive composition The second step of processing the semiconductor substrate of the obtained laminate,
- a method for manufacturing a processed semiconductor substrate which comprises a third step of peeling the semiconductor substrate after processing and a fourth step of cleaning and removing the adhesive residue remaining on the peeled semiconductor substrate with a detergent composition.
- a method for producing a processed semiconductor substrate which comprises using any of the cleaning agent compositions 1 to 14 as the cleaning agent composition.
- cleaning agent composition of the present invention for example, cleaning of a substrate such as a semiconductor substrate to which an adhesive residue is attached after peeling off the temporary adhesion by the adhesive layer obtained by using a polysiloxane-based adhesive can be performed in a short time. Therefore, it becomes possible to carry out easily. As a result, high efficiency and good semiconductor manufacturing can be expected.
- the detergent composition of the present invention contains a quaternary ammonium salt.
- the quaternary ammonium salt is composed of a quaternary ammonium cation and an anion, and is not particularly limited as long as it is used for this kind of application.
- quaternary ammonium cation examples include a tetra (hydrocarbon) ammonium cation.
- hydroxide ion (OH -); fluoride ions (F -), chlorine ion (Cl -), bromine ion (Br -), iodide ion (I -) halide such as ion ; tetrafluoroborate (BF 4 -); hexafluorophosphate (PF 6 -) and the like include, but are not limited to.
- the quaternary ammonium salt preferably contains a halogen-containing quaternary ammonium salt, and more preferably contains a fluorine-containing quaternary ammonium salt.
- the halogen atom may be contained in the cation or the anion, but is preferably contained in the anion.
- the fluorinated quaternary ammonium salt comprises tetra (hydrogen) ammonium fluoride (ie, tetra (hydrogen) ammonium fluoride).
- hydrocarbon group in tetra (hydrocarbon) ammonium fluoride include an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, and 6 to 20 carbon atoms.
- the aryl group of the above can be mentioned.
- the tetra (hydrocarbon) ammonium fluoride comprises tetraalkylammonium fluoride.
- tetraalkylammonium fluoride include, but are not limited to, tetramethylammonium fluoride, tetraethylammonium fluoride, tetrapropylammonium fluoride, and tetrabutylammonium fluoride. Of these, tetrabutylammonium fluoride (ie, tetrabutylammonium fluoride (TBAF)) is preferred.
- TBAF tetrabutylammonium fluoride
- a hydrate may be used as the quaternary ammonium salt such as tetra (hydrocarbon) ammonium fluoride. Further, the quaternary ammonium salt such as tetra (carbohydrate) ammonium fluoride and its hydrate may be used alone or in combination of two or more.
- the amount of the quaternary ammonium salt is not particularly limited as long as it is dissolved in the solvent contained in the detergent composition, but is usually 0.1 to 30% by mass with respect to the detergent composition.
- the detergent composition of the present invention contains a solvent containing a first organic solvent and a second organic solvent, and the first organic solvent is an acid amide derivative represented by the formula (Z), and the second organic solvent. However, it is another organic solvent different from the above acid amide derivative.
- R 0 represents an ethyl group, a propyl group or an isopropyl group, and an ethyl group and an isopropyl group are preferable, and an ethyl group is more preferable.
- R A and R B independently of one another represent an alkyl group having 1 to 4 carbon atoms.
- the alkyl group having 1 to 4 carbon atoms may be linear, branched or cyclic, and specifically, a methyl group, an ethyl group, a propyl group, an isopropyl group, a cyclopropyl group, an n-butyl group or an isobutyl group.
- R A and R B are both more preferably a methyl group or an ethyl group, both still more preferably, methyl group.
- Examples of the acid amide derivative represented by the formula (Z) include N, N-dimethylpropionamide, N, N-diethylpropionamide, N-ethyl-N-methylpropionamide, N, N-dimethylbutyric acid amide, N, Examples thereof include N-diethylbutyric acid amide, N-ethyl-N-methylbutyric acid amide, N, N-dimethylisobutyric acid amide, N, N-diethylisobutyric acid amide, N-ethyl-N-methylisobutyric acid amide, but are limited thereto. Not done.
- the acid amide derivative represented by the formula (Z) can be used alone or in combination of two or more. Of these, N, N-dimethylpropionamide and N, N-dimethylisobutyramide are particularly preferable, and N, N-dimethylpropionamide is more preferable.
- the acid amide derivative represented by the formula (Z) may be synthesized by a substitution reaction between the corresponding carboxylic acid ester and amine, or a commercially available product may be used.
- the detergent composition of the present invention contains one or more other organic solvents different from the above acid amide derivatives.
- Such other organic solvents are used for this kind of use, and are particularly limited as long as they are organic solvents that dissolve the quaternary ammonium salt and are compatible with the acid amide derivative. It's not a thing.
- An example of a preferable other organic solvent is an alkylene glycol dialkyl ether.
- alkylene glycol dialkyl ether examples include ethylene glycol dimethyl ether (1,2-dimethoxyethane), ethylene glycol diethyl ether (1,2-diethoxyethane), ethylene glycol dipropyl ethane, ethylene glycol dibutyl ether, and propylene glycol dimethyl ether. , Propylene glycol diethyl ether, propylene glycol dipropyl ether and the like, but are not limited thereto.
- the alkylene glycol dialkyl ether can be used alone or in combination of two or more.
- An example of a preferable other organic solvent is an aromatic hydrocarbon compound, and a specific example thereof is an aromatic hydrocarbon compound represented by the formula (1).
- alkyl group having 1 to 6 carbon atoms in the above formula (1) examples include methyl group, ethyl group, n-propyl group, n-butyl group, isobutyl, s-butyl, t-butyl and the like. .. s represents the number of substituents R 100 substituting on the benzene ring, a 2 or 3.
- the aromatic hydrocarbon compound represented by the formula (1) is an aromatic hydrocarbon compound represented by the formula (1-1) or (1-2).
- R 100 represents an alkyl group having 1 to 6 carbon atoms independently of each other, but the total number of carbon atoms of the three alkyl groups having 1 to 6 carbon atoms of R 100 in the formula (1-1) is 3 or more. , and the total number of carbon atoms in two alkyl groups having 1 to 6 carbon atoms R 100 in formula (1-2) is 3 or more.
- aromatic hydrocarbon compound represented by the formula (1) examples include 1,2,3-trimethylbenzene, 1,2,4-trimethylbenzene, 1,2,5-trimethylbenzene, 1,3. 5-trimethylbenzene (mesitylene), 4-ethyltoluene, 4-n-bropyrtoluene, 4-isobropyrtoluene, 4-n-butyltoluene, 4-s-butyltoluene, 4-isobutyltoluene, 4-t- Examples include, but are not limited to, butyltoluene and the like.
- the aromatic hydrocarbon compound can be used alone or in combination of two or more. Of these, mesitylene and 4-t-butyltoluene are preferable.
- Examples of other preferable organic solvents include cyclic structure-containing ether compounds.
- Examples of the cyclic structure-containing ether compound include a cyclic ether compound, a cyclic alkyl chain alkyl ether compound, a cyclic alkyl branched alkyl ether compound, and a di (cyclic alkyl) ether compound.
- the cyclic structure-containing ether compound can be used alone or in combination of two or more.
- the cyclic structure-containing ether compound is one in which at least one of the carbon atoms constituting the ring of the cyclic hydrocarbon compound is replaced with an oxygen atom.
- epoxidized chain, branched or cyclic saturated hydrocarbon compounds ie, two adjacent carbon atoms and oxygen atoms form a three-membered ring
- Cyclic ether compounds other than epoxy in which carbon atoms constituting the ring of cyclic hydrocarbon compounds having 4 or more carbon atoms (excluding aromatic hydrocarbon compounds) are replaced with oxygen atoms (epoxide compounds are excluded.
- a cyclic hydrocarbon compound having 4 or more carbon atoms a cyclic saturated hydrocarbon compound having 4 or more carbon atoms is preferable.
- the carbon number of the epoxy compound is not particularly limited, but is usually 4 to 40, preferably 6 to 12.
- the number of epoxy groups is not particularly limited, but is usually 1 to 4, preferably 1 or 2.
- epoxy compounds include 1,2-epoxy-n-butane, 1,2-epoxy-n-pentane, 1,2-epoxy-n-hexane, 1,2-epoxy-n-heptane, 1 , 2-Epoxy-n-octane, 1,2-epoxy-n-nonane, 1,2-epoxy-n-decane, 1,2-epoxy-n-eicosane and other epoxy chain or branched saturated hydrocarbon compounds , 1,2-epoxycyclopentane, 1,2-epoxycyclohexane, 1,2-epoxycycloheptane, 1,2-epoxycyclooctane, 1,2-epoxycyclononane, 1,2-epoxycyclodecane, 1, Examples include, but are not limited to, epoxy cyclic saturated hydrocarbon compounds such as 2-epoxycycloeikosan.
- the number of carbon atoms of the cyclic ether compound other than the epoxy is not particularly limited, but is usually 3 to 40, preferably 4 to 8.
- the number of oxygen atoms (ether groups) is not particularly limited, but is usually 1 to 3, preferably 1 or 2.
- cyclic ether compound other than the epoxy examples include oxacyclopentane (oxetan), oxacyclopentane (tetrahydrofuran), oxacyclohexane and other oxacyclic saturated hydrocarbon compounds, 1,3-dioxacyclopentane, and 1,3-.
- examples thereof include, but are not limited to, dioxacyclic saturated hydrocarbon compounds such as dioxacyclohexane (1,3-dioxane) and 1,4-dioxacyclohexane (1,4-dioxane).
- the cyclic alkyl chain alkyl ether compound is composed of a cyclic alkyl group, a chain alkyl group, and an ether group connecting both of them, and the number of carbon atoms thereof is not particularly limited, but is usually 4 to 40. Yes, preferably 5 to 20.
- the cyclic alkyl branched alkyl ether compound is composed of a cyclic alkyl group, a branched alkyl group, and an ether group connecting both of them, and the number of carbon atoms thereof is not particularly limited, but is usually 6 to 40. Yes, preferably 5 to 20.
- the di (cyclic alkyl) ether compound is composed of two cyclic alkyl groups and an ether group connecting the two, and the number of carbon atoms thereof is not particularly limited, but is usually 6 to 40. It is preferably 10 to 20.
- a cyclic alkyl chain alkyl ether compound and a cyclic alkyl branched alkyl ether compound are preferable, and a cyclic alkyl chain alkyl ether compound is more preferable.
- the chain alkyl group is a group derived by removing a hydrogen atom at the terminal of a linear aliphatic hydrocarbon, and the carbon number thereof is not particularly limited, but is usually 1 to 40, which is preferable. Is 1 to 20. Specific examples thereof include methyl group, ethyl group, 1-n-propyl group, 1-n-butyl group, 1-n-pentyl group, 1-n-hexyl group, 1-n-heptyl group and 1-n. -Octyl group, 1-n-nonyl group, 1-n-decyl group and the like can be mentioned, but the present invention is not limited thereto.
- a branched alkyl group is a group derived by removing a hydrogen atom of a linear or branched aliphatic hydrocarbon, other than a chain alkyl group, and the number of carbon atoms thereof is particularly limited. Although not, it is usually 3 to 40, preferably 3 to 20. Specific examples thereof include, but are not limited to, an isopropyl group, an isobutyl group, an s-butyl group, a t-butyl group and the like.
- a cyclic alkyl group is a group derived by removing a hydrogen atom on a carbon atom constituting a ring of a cyclic aliphatic hydrocarbon, and the number of carbon atoms thereof is not particularly limited, but is usually 3 to 40. Yes, preferably 5 to 20. Specific examples thereof include a monocycloalkyl group such as a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cycloheptyl group, and a cyclohexyl, a bicyclo [2.2.1] heptane-1-yl group, and a bicyclo [2.2.1].
- Heptane-2-yl group bicyclo [2.2.1] heptane-7-yl group, bicyclo [2.2.2] octane-1-yl group, bicyclo [2.2.2] octane-2- Examples thereof include, but are not limited to, an yl group and a bicycloalkyl group such as a bicyclo [2.2.2] octane-7-yl group.
- cyclic alkyl chain alkyl ether compound examples include cyclopentyl methyl ether (CPME), cyclopentyl ethyl ether, cyclopentyl propyl ether, cyclopentyl butyl ether, cyclohexyl methyl ether, cyclohexyl ethyl ether, cyclohexyl propyl ether, cyclohexyl butyl ether and the like. Yes, but not limited to these.
- cyclic alkyl branched alkyl ether compound examples include, but are not limited to, cyclopentyl isopropyl ether, cyclopentyl t-butyl ether and the like.
- di (cyclic alkyl) ether compound examples include, but are not limited to, dicyclopentyl ether, dicyclohexyl ether, cyclopentylcyclohexyl ether and the like.
- the solvents contained in the detergent composition of the present invention usually 30 to 90% by mass is the acid amide derivative, and the remainder is the other organic solvent.
- the detergent composition of the present invention has a water content of less than 4.0% by mass.
- the water content is 4% by mass or more, the detergency of the composition is significantly deteriorated. The reason for this is not clear, but it is presumed that the quaternary ammonium salt contained in the detergent composition is adversely affected, and as a result, the function as the detergent composition is impaired.
- the water content can be calculated by, for example, the Karl Fischer method using a trace moisture measuring device CA-200 (manufactured by Mitsubishi Chemical Analytech Co., Ltd.).
- the water content of the detergent composition of the present invention is preferably less than 3.0% by mass, more preferably less than 2.0% by mass, and more, from the viewpoint of obtaining a cleaning composition having excellent cleaning ability with good reproducibility. It is more preferably less than 1.5% by mass, further preferably less than 1.0% by mass, and even more preferably less than 0.8% by mass.
- the solvent contained in the detergent composition comprises only an organic solvent. By using only an organic solvent as the solvent, a detergent composition having excellent detergency can be obtained with good reproducibility. Therefore, the detergent composition of the present invention usually contains only an organic solvent as a solvent.
- the detergent composition of the present invention is characterized in that it contains substantially no water.
- substantially free of water means that water is not blended, and as described above, it does not exclude water as a hydrate of other components and a trace amount of water mixed with the components.
- the detergent composition of the present invention must satisfy the above range of water content.
- the detergent composition of the present invention can be obtained by mixing the quaternary ammonium salt and its hydrate, the first organic solvent and the second organic solvent, and if necessary, other components.
- a hydrate include, but are not limited to, tetrabutylammonium fluoride trihydrate and the like.
- Each component can be mixed in any order as long as problems such as precipitation of solid content and separation of the composition do not occur in the end. That is, a part of all the components of the detergent composition may be mixed in advance and then the remaining components may be mixed, or all the components may be mixed at once.
- the detergent composition may be filtered, or the supernatant may be recovered while avoiding insoluble components after mixing, and the supernatant may be used as the detergent composition. Further, when the component used is, for example, hygroscopic or deliquescent, all or part of the work of preparing the detergent composition may be carried out under an inert gas.
- the cleaning agent composition of the present invention described above has good detergency against a polysiloxane-based adhesive, and is excellent in both cleaning speed and cleaning sustainability. Specifically, regarding the cleaning rate, when the adhesive layer obtained from the adhesive composition was brought into contact with the cleaning agent composition for 5 minutes at room temperature (23 ° C.), the film thickness reduction was measured before and after the contact.
- the etching rate [ ⁇ m / min] calculated by dividing the reduced amount by the cleaning time is usually 8.0 [ ⁇ m / min] or more in the cleaning agent composition of the present invention, and in a preferred embodiment, 9.
- the cleaning agent composition of the present invention is usually 12 Most of the adhesive solid is dissolved in ⁇ 24 hours, the adhesive solid is completely dissolved in 2 to 12 hours in a preferred embodiment, and the adhesive solid is completely dissolved in 1 to 2 hours in a more preferable embodiment.
- the substrate can be cleaned in a short time by cleaning and removing the polysiloxane-based adhesive remaining on the substrate such as a semiconductor substrate by using the cleaning agent composition described above. Therefore, it is possible to clean substrates such as semiconductor substrates with high efficiency and good quality.
- the cleaning agent composition of the present invention is used for cleaning the surface of various substrates such as a semiconductor substrate, and the object of cleaning is not limited to a silicon semiconductor substrate, for example, a germanium substrate.
- a preferred method of using the detergent composition of the present invention in a semiconductor process is to use it in a method for manufacturing a processed substrate such as a thinned substrate used in a semiconductor packaging technology such as TSV. Specifically, a first step of manufacturing a laminate including a semiconductor substrate, a support substrate, and an adhesive layer obtained from an adhesive composition, a second step of processing the semiconductor substrate of the obtained laminate, and processing.
- a cleaning agent composition in a method for producing a processed substrate which comprises a third step of peeling the semiconductor substrate later and a fourth step of cleaning and removing the adhesive residue remaining on the peeled semiconductor substrate with the cleaning agent composition.
- the cleaning composition of the present invention is used.
- the adhesive composition used for forming the adhesive layer in the first step is typically a silicone-based adhesive (polysiloxane-based adhesive), an acrylic resin-based adhesive, an epoxy resin-based adhesive, or a polyamide.
- At least one adhesive selected from the group consisting of based adhesives, polystyrene adhesives, polyimide adhesives and phenol resin adhesives can be used, but especially for cleaning polysiloxane adhesives. It is effective to adopt the cleaning agent composition of the present invention, and above all, the cleaning agent composition of the present invention is used for cleaning and removing the adhesive residue of the polysiloxane-based adhesive containing the component (A) that is cured by the hydrosilylation reaction. Things are effective.
- the component (A) contained in the adhesive composition that is cured by the hydrosilylation reaction is, for example, a siloxane unit (Q unit) represented by SiO 2 or a siloxane unit represented by R 1 R 2 R 3 SiO 1/2 (the siloxane unit (Q unit)). 1 or 2 selected from the group consisting of siloxane unit (D unit) represented by M unit), R 4 R 5 SiO 2/2 and siloxane unit (T unit) represented by R 6 SiO 3/2.
- the polysiloxane (A1) containing the above units, and a platinum group metal catalyst (A2), the polysiloxane (A1) is siloxane unit (Q 'units), R 1' represented by SiO 2 R 2 'R 3' siloxane units (M 'units), R 4' represented by SiO 1/2 R 5 'siloxane units (D represented by SiO 2/2' units) and R 6 'SiO 3/2
- polyorganosiloxane (a1) containing a siloxane unit represented by SiO 2 (Q “units), R 1" R 2 " R 3" siloxane units (M “units) represented by SiO 1/2, R 1 or 2 selected from the group consisting of 4 siloxane units (D “units) represented by” R 5 "SiO 2/2 and siloxane units (T" units) represented by R 6 "SiO 3/2".
- a polyorganosiloxane (a2) containing at least one selected from the group consisting of the above M “units, D" units and T "units.
- R 1 to R 6 are groups or atoms bonded to a silicon atom, and independently represent an alkyl group, an alkenyl group, or a hydrogen atom.
- R 1 ' ⁇ R 6' is a group bonded to a silicon atom, each independently, represent an alkyl group or an alkenyl group, at least one of R 1 ' ⁇ R 6' is an alkenyl group.
- R 1 "to R 6 " is a group or atom bonded to a silicon atom and represents an alkyl group or a hydrogen atom independently of each other, but at least one of R 1 "to R 6 " is a hydrogen atom. ..
- the alkyl group may be linear, branched or cyclic, but a linear or branched alkyl group is preferable, and the number of carbon atoms thereof is not particularly limited, but is usually 1 to 40. Yes, preferably 30 or less, more preferably 20 or less, even more preferably 10 or less.
- linear or branched alkyl group examples include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, an s-butyl group, and a t-butyl group.
- N-pentyl group 1-methyl-n-butyl group, 2-methyl-n-butyl group, 3-methyl-n-butyl group, 1,1-dimethyl-n-propyl group, 1,2-dimethyl- n-propyl group, 2,2-dimethyl-n-propyl group, 1-ethyl-n-propyl group, n-hexyl, 1-methyl-n-pentyl group, 2-methyl-n-pentyl group, 3-methyl -N-pentyl group, 4-methyl-n-pentyl group, 1,1-dimethyl-n-butyl group, 1,2-dimethyl-n-butyl group, 1,3-dimethyl-n-butyl group, 2, 2-Dimethyl-n-butyl group, 2,3-dimethyl-n-butyl group, 3,3-dimethyl-n-butyl group, 1-ethyl-n-butyl group, 2-ethyl-n-butyl group, 1-e
- cyclic alkyl group examples include cyclopropyl group, cyclobutyl group, 1-methyl-cyclopropyl group, 2-methyl-cyclopropyl group, cyclopentyl group, 1-methyl-cyclobutyl group, 2-methyl-cyclobutyl group, 3 -Methyl-cyclobutyl group, 1,2-dimethyl-cyclopropyl group, 2,3-dimethyl-cyclopropyl group, 1-ethyl-cyclopropyl group, 2-ethyl-cyclopropyl group, cyclohexyl group, 1-methyl-cyclopentyl Group, 2-methyl-cyclopentyl group, 3-methyl-cyclopentyl group, 1-ethyl-cyclobutyl group, 2-ethyl-cyclobutyl group, 3-ethyl-cyclobutyl group, 1,2-dimethyl-cyclobutyl group, 1,3- Dimethyl-cyclobutyl group, 2,2-dimethyl-cyclobut
- the alkenyl group may be in the form of a linear chain or a branched chain, and the number of carbon atoms thereof is not particularly limited, but is usually 2 to 40, preferably 30 or less, more preferably 20 or less, and further. It is preferably 10 or less.
- alkenyl group examples include ethenyl group, 1-propenyl group, 2-propenyl group, 1-methyl-1-ethenyl group, 1-butenyl group, 2-butenyl group, 3-butenyl group and 2-methyl-1.
- -Propenyl group 2-methyl-2-propenyl group, 1-ethylethenyl group, 1-methyl-1-propenyl group, 1-methyl-2-propenyl group, 1-pentenyl group, 2-pentenyl group, 3-pentenyl group , 4-Pentenyl group, 1-n-propylethenyl group, 1-methyl-1-butenyl group, 1-methyl-2-butenyl group, 1-methyl-3-butenyl group, 2-ethyl-2-propenyl group , 2-Methyl-1-butenyl group, 2-methyl-2-butenyl group, 2-methyl-3-butenyl group, 3-methyl-1-butenyl group, 3-methyl-2-butenyl group, 3-methyl-2-butenyl group, 3-methyl- 3-butenyl group, 1,1-dimethyl-2-propenyl group, 1-i-propylethenyl group, 1,2-dimethyl-1-propenyl group, 1,2-dimethyl-2-propenyl
- the polysiloxane (A1) contains the polyorganosiloxane (a1) and the polyorganosiloxane (a2), but is contained in the alkenyl group contained in the polyorganosiloxane (a1) and the polyorganosiloxane (a2).
- a hydrogen atom (Si—H group) forms a crosslinked structure by a hydrosilylation reaction with a platinum group metal-based catalyst (A2) and is cured.
- the polyorganosiloxane (a1) contains one or more units selected from the group consisting of Q'units, M'units, D'units and T'units, and the M'units, D'units and the above-mentioned M'units and D'units. It contains at least one selected from the group consisting of T'units.
- the polyorganosiloxane (a1) two or more types of polyorganosiloxane satisfying such conditions may be used in combination.
- Preferred combinations of two or more selected from the group consisting of Q'units, M'units, D'units and T'units are (Q'units and M'units), (D'units and M'units), (T'unit and M'unit), (Q'unit and T'unit and M'unit), but are not limited thereto.
- polyorganosiloxane included in the polyorganosiloxane (a1) When two or more types of polyorganosiloxane included in the polyorganosiloxane (a1) are contained, a combination of (Q'unit and M'unit) and (D'unit and M'unit), (T'unit). And M'units) and (D'units and M'units), and (Q'units and T'units and M'units) and (T'units and M'units) are preferred. Not limited to.
- the polyorganosiloxane (a2) contains one or more units selected from the group consisting of Q “units, M” units, D “units and T” units, as well as the above M “units, D” units and It contains at least one selected from the group consisting of T "units.
- the polyorganosiloxane (a2) two or more types of polyorganosiloxane satisfying such conditions may be used in combination.
- Preferred combinations of two or more selected from the group consisting of Q “units, M” units, D “units and T” units are (M “units and D” units), (Q “units and M” units), (Q “unit and T” unit and M “unit), but are not limited to these.
- Polyorganosiloxanes (a1) is one in which the alkyl group and / or alkenyl groups is composed of siloxane units bonded to the silicon atoms, alkenyl during all the substituents represented by R 1 ' ⁇ R 6' proportion of group is preferably 0.1 mol% to 50.0 mol%, more preferably from 0.5 mol% to 30.0 mol%, the remaining R 1 ' ⁇ R 6' is an alkyl group be able to.
- the polyorganosiloxane (a2) is composed of a siloxane unit in which an alkyl group and / or a hydrogen atom is bonded to the silicon atom, and all the substituents and substitutions represented by R 1 "to R 6".
- the proportion of hydrogen atoms in the atom is preferably 0.1 mol% to 50.0 mol%, more preferably 10.0 mol% to 40.0 mol%, and the remaining R 1 "to R 6 " are. It can be an alkyl group.
- the polysiloxane (A1) contains a polyorganosiloxane (a1) and a polyorganosiloxane (a2), but in a preferred embodiment of the present invention, the alkenyl group and the polyorganosiloxane contained in the polyorganosiloxane (a1)
- the molar ratio with the hydrogen atom constituting the Si—H bond contained in (a2) is in the range of 1.0: 0.5 to 1.0: 0.66.
- the weight average molecular weights of the polyorganosiloxane (a1) and the polyorganosiloxane (a2) are usually 500 to 1,000,000, but preferably 5,000 to 50,000, respectively.
- the weight average molecular weight is, for example, a GPC apparatus (EcoSEC, HLC-8320GPC manufactured by Tosoh Corporation) and a GPC column (Shodex®, KF-803L, KF-802 and KF-801 manufactured by Showa Denko KK). ), The column temperature is 40 ° C., tetrahydrofuran is used as the eluent (eluting solvent), the flow rate (flow velocity) is 1.0 mL / min, and polystyrene (manufactured by Sigma Aldrich) is used as a standard sample for measurement. be able to.
- the polyorganoshirosan (a1) and the polyorganoshirosan (a2) contained in the adhesive composition react with each other by a hydrosilylation reaction to form a cured film. Therefore, the mechanism of curing is different from that via a silanol group, for example, and therefore, any siloxane contains a functional group that forms a silanol group by hydrolysis such as a silanol group or an alkyloxy group. There is no need.
- the component (A) contains a platinum group metal-based catalyst (A2) together with the above-mentioned polysiloxane (A1).
- a platinum-based metal catalyst is a catalyst for promoting the hydrosilylation reaction between the alkenyl group of the polyorganosiloxane (a1) and the Si—H group of the polyorganosiloxane (a2).
- platinum-based metal catalyst examples include platinum black, second platinum chloride, platinum chloride acid, a reaction product of platinum chloride acid and a monovalent alcohol, a complex of platinum chloride acid and olefins, platinum bisacetoacetate, and the like. Platinum-based catalysts, but are not limited to these. Examples of the complex of platinum and olefins include, but are not limited to, a complex of divinyltetramethyldisiloxane and platinum.
- the amount of the platinum group metal catalyst (A2) is usually in the range of 1.0 to 50.0 ppm with respect to the total amount of the polyorganosiloxane (a1) and the polyorganosiloxane (a2).
- the component (A) may contain a polymerization inhibitor (A3).
- a polymerization inhibitor By including a polymerization inhibitor in the adhesive composition, curing by heating at the time of bonding can be suitably controlled, and an adhesive composition that provides an adhesive layer having excellent adhesiveness and peelability can be obtained with good reproducibility. ..
- the polymerization inhibitor is not particularly limited as long as it can suppress the progress of the hydrosilylation reaction, and specific examples thereof include 1-ethynyl-1-cyclohexanol and 1,1-diphenyl-2-propin-1-. Examples thereof include, but are not limited to, alkynylalkyl alcohols such as oars.
- the amount of the polymerization inhibitor is usually 1000.0 ppm or more with respect to the polyorganosiloxane (a1) and the polyorganosiloxane (a2) from the viewpoint of obtaining the effect, and the viewpoint of preventing excessive suppression of the hydrosilylation reaction. To 10000.0 ppm or less.
- Such an adhesive composition contains at least one component selected from the group consisting of a component containing an epoxy group-containing polyorganosiloxane, a component containing a methyl group-containing polyorganosiloxane, and a component containing a phenyl group-containing polyorganosiloxane (B). ) May be included.
- a component (B) in the adhesive composition, the obtained adhesive layer can be appropriately peeled off with good reproducibility.
- epoxy group-containing polyorganosiloxane examples include those containing a siloxane unit (D 10 unit) represented by R 11 R 12 SiO 2/2.
- R 11 is a group bonded to a silicon atom and represents an alkyl group
- R 12 is a group bonded to a silicon atom and represents an epoxy group or an organic group containing an epoxy group.
- Specific examples of the alkyl group include , The above-mentioned examples can be given.
- the epoxy group in the organic group containing an epoxy group may be an independent epoxy group without condensing with another ring, and a fused ring with another ring such as 1,2-epoxide cyclohexyl group may be used. It may be an epoxy group formed.
- organic group containing an epoxy group examples include, but are not limited to, 3-glycidoxypropyl and 2- (3,4-epoxycyclohexyl) ethyl.
- a preferable example of the epoxy group-containing polyorganosiloxane includes, but is not limited to, an epoxy group-containing polydimethylsiloxane.
- the epoxy group-containing polyorganosiloxane contains the above-mentioned siloxane unit (D 10 unit), but may contain the above Q unit, M unit and / or T unit in addition to the D 10 unit.
- specific examples of the epoxy group-containing polyorganosiloxane comprises a polyorganosiloxane comprising only D 10 units, a polyorganosiloxane containing a D 10 and Q units, and a D 10 units and M units Polyorganosiloxane, D Polyorganosiloxane containing 10 units and T units, D Polyorganosiloxane containing 10 units, Q units and M units, D Polyorganosiloxane containing 10 units, M units and T units, D Examples thereof include polyorganosiloxane containing 10 units, Q units, M units and T units.
- the epoxy group-containing polyorganosiloxane is preferably an epoxy group-containing polydimethylsiloxane having an epoxy value of 0.1 to 5, and the weight average molecular weight thereof is usually 1,500 to 500,000, but in the adhesive composition. From the viewpoint of suppressing precipitation in the above, it is preferably 100,000 or less.
- epoxy group-containing polyorganosiloxane are represented by the trade name CMS-227 (manufactured by Gerest, weight average molecular weight 27,000) represented by the formula (A-1) and the formula (A-2).
- Product name ECMS-327 (manufactured by Gerest, weight average molecular weight 28,800), product name KF-101 represented by the formula (A-3) (manufactured by Shin-Etsu Chemical Co., Ltd., weight average molecular weight 31,800),
- Product name KF-1001 represented by formula (A-4) (manufactured by Shin-Etsu Chemical Co., Ltd., weight average molecular weight 55,600), trade name KF-1005 represented by formula (A-5) (Shin-Etsu Chemical Co., Ltd.) Industrial Co., Ltd., weight average molecular weight 11,500), trade name X-22-343 (manufactured by Shin-Etsu Chemical Co., Ltd., weight average molecular weight 2,400) represented by formula
- R is an alkylene group having 1 to 10 carbon atoms.
- R is an alkylene group having 1 to 10 carbon atoms.
- R is an alkylene group having 1 to 10 carbon atoms.
- R is an alkylene group having 1 to 10 carbon atoms.
- R is an alkylene group having 1 to 10 carbon atoms.
- the methyl group-containing polyorganosiloxane includes, for example, a siloxane unit (D 200 units) represented by R 210 R 220 SiO 2/2 , preferably a siloxane unit (D 20) represented by R 21 R 21 SiO 2/2. Units) are included.
- R 210 and R 220 are groups bonded to a silicon atom and independently represent an alkyl group, but at least one of them is a methyl group, and specific examples of the alkyl group include the above-mentioned examples. it can.
- R 21 is a group bonded to a silicon atom, represents an alkyl group, and specific examples of the alkyl group include the above-mentioned examples. Of these, a methyl group is preferable as R 21.
- a preferred example of the methyl group-containing polyorganosiloxane is, but is not limited to, polydimethylsiloxane.
- the methyl group-containing polyorganosiloxane contains the above-mentioned siloxane unit (D 200 or D 20 unit), but may contain the above Q unit, M unit and / or T unit in addition to D 200 and D 20 unit. Good.
- methyl group-containing polyorganosiloxane comprises a polyorganosiloxane comprising only D 200 units, a polyorganosiloxane containing a D 200 and Q units, and D 200 units and M units Polyorganosiloxane, D Polyorganosiloxane containing 200 units and T units, D Polyorganosiloxane containing 200 units, Q units and M units, D Polyorganosiloxane containing 200 units, M units and T units, D Examples thereof include polyorganosiloxane containing 200 units, Q units, M units and T units.
- methyl group-containing polyorganosiloxane comprises a polyorganosiloxane comprising only D 20 units, a polyorganosiloxane containing a D 20 and Q units, and a D 20 units and M units Polyorganosiloxane, polyorganosiloxane containing D 20 units and T units, polyorganosiloxane containing D 20 units, Q units and M units, D polyorganosiloxane containing 20 units, M units and T units, D Examples thereof include polyorganosiloxane containing 20 units, Q units, M units and T units.
- the viscosity of the methyl group-containing polyorganosiloxane is usually 1,000 to 2,000,000 mm 2 / s, but is preferably 10,000 to 1,000,000 mm 2 / s.
- the kinematic viscosity can be measured with a kinematic viscometer. It can also be obtained by dividing the viscosity (mPa ⁇ s) by the density (g / cm 3).
- methyl group-containing polyorganosiloxane examples include WACKER (registered trademark SILICONE FLUID AK series) manufactured by Wacker and dimethyl silicone oil (KF-96L, KF-96A, KF-96, KF-) manufactured by Shin-Etsu Chemical Co., Ltd. 96H, KF-69, KF-965, KF-968), cyclic dimethyl silicone oil (KF-995) and the like, but are not limited thereto.
- the phenyl group-containing polyorganosiloxane for example, those containing siloxane units represented by R 31 R 32 SiO 2/2 (D 30 units).
- R 31 is a group bonded to a silicon atom and represents a phenyl group or an alkyl group
- R 32 is a group bonded to a silicon atom and represents a phenyl group.
- Specific examples of the alkyl group include the above-mentioned examples. Although it can be mentioned, a methyl group is preferable.
- the phenyl group-containing polyorganosiloxane contains the above-mentioned siloxane unit (D 30 unit), but may contain the above Q unit, M unit and / or T unit in addition to the D 30 unit.
- phenyl group-containing polyorganosiloxane comprises a polyorganosiloxane comprising only D 30 units, a polyorganosiloxane containing a D 30 and Q units, and a D 30 units and M units polyorganosiloxanes, polyorganosiloxanes containing polyorganosiloxane, D 30 unit and M units and T units containing polyorganosiloxane, D 30 and Q units and M units containing a D 30 units and T units, D Examples thereof include polyorganosiloxane containing 30 units, Q units, M units and T units.
- the weight average molecular weight of the phenyl group-containing polyorganosiloxane is usually 1,500 to 500,000, but is preferably 100,000 or less from the viewpoint of suppressing precipitation in the adhesive composition.
- Such an adhesive composition may contain the component (A) and the component (B) in an arbitrary ratio, but in consideration of the balance between the adhesiveness and the peelability, the ratio of the component (A) and the component (B) is ,
- the mass ratio is preferably 99.995: 0.005 to 30:70, more preferably 99.9: 0.1 to 75:25.
- Such an adhesive composition may contain a solvent for the purpose of adjusting the viscosity, and specific examples thereof include, but are not limited to, aliphatic hydrocarbons, aromatic hydrocarbons, and ketones. ..
- the content thereof is appropriately set in consideration of the viscosity of the desired adhesive composition, the coating method to be adopted, the thickness of the thin film to be produced, and the like.
- the range is about 10 to 90% by mass with respect to the entire agent composition.
- the viscosity of the adhesive composition is usually 1,000 to 20,000 mPa ⁇ s at 25 ° C., and the types of solvents used and their ratios are taken into consideration in consideration of various factors such as the coating method used and the desired film thickness. , It can be adjusted by changing the film component concentration and the like.
- the adhesive composition can be produced by mixing a film component and a solvent.
- the above-mentioned adhesive composition can be produced by mixing the film constituents.
- the mixing order is not particularly limited, but examples of a method capable of easily and reproducibly producing an adhesive composition include, for example, a method of dissolving all of the membrane constituents in a solvent and a membrane configuration. Examples thereof include a method in which a part of the components is dissolved in a solvent, the rest of the membrane constituents are dissolved in the solvent, and the obtained solution is mixed. In this case, if necessary, a part of the solvent and the membrane component having excellent solubility can be added at the end.
- heating may be appropriately performed as long as the components are not decomposed or deteriorated.
- filtration may be performed using a filter on the order of submicrometers or the like in the middle of manufacturing the composition or after mixing all the components.
- the first step of the above-mentioned method for manufacturing a processed substrate includes a pre-step of applying the adhesive composition to the surface of a semiconductor substrate or a support substrate to form an adhesive coating layer, and the above-mentioned semiconductor substrate.
- the semiconductor substrate and the support substrate are combined with each other via the adhesive coating layer, and a load in the thickness direction of the semiconductor substrate and the support substrate is applied while performing at least one of heat treatment and decompression treatment to obtain the semiconductor substrate.
- the adhesive coating layer is finally suitably cured to become an adhesive layer, and a laminate is produced.
- the semiconductor substrate is a wafer and the support substrate is a support.
- the target to which the adhesive composition is applied may be one or both of the semiconductor substrate and the support substrate.
- the wafer include, but are not limited to, silicon wafers and glass wafers having a diameter of 300 mm and a thickness of about 770 ⁇ m.
- the support (carrier) is not particularly limited, and examples thereof include, but are not limited to, a silicon wafer having a diameter of about 300 mm and a thickness of about 700 ⁇ m.
- the film thickness of the adhesive coating layer is usually 5 to 500 ⁇ m, but from the viewpoint of maintaining the film strength, it is preferably 10 ⁇ m or more, more preferably 20 ⁇ m or more, still more preferably 30 ⁇ m or more, and is caused by the thick film. From the viewpoint of avoiding non-uniformity, it is preferably 200 ⁇ m or less, more preferably 150 ⁇ m or less, even more preferably 120 ⁇ m or less, still more preferably 70 ⁇ m or less.
- the coating method is not particularly limited, but is usually a spin coating method.
- a method of separately forming a coating film by a spin coating method or the like and attaching a sheet-shaped coating film may be adopted, which is also referred to as coating or coating film.
- the temperature of the heat treatment is usually 80 ° C. or higher, and preferably 150 ° C. or lower from the viewpoint of preventing excessive curing.
- the heat treatment time is usually 30 seconds or more, preferably 1 minute or more from the viewpoint of reliably developing the temporary adhesive ability, but is usually 10 minutes or less from the viewpoint of suppressing deterioration of the adhesive layer and other members. It is preferably 5 minutes or less.
- the two substrates and the adhesive coating layer between them may be placed under an atmospheric pressure of 10 to 10,000 Pa.
- the time of the reduced pressure treatment is usually 1 to 30 minutes.
- the two substrates and the layers between them are bonded together, preferably by heat treatment, more preferably by a combination of heat treatment and decompression treatment.
- the load in the thickness direction of the semiconductor substrate and the support substrate is particularly limited as long as it is a load that does not adversely affect the semiconductor substrate and the support substrate and the layer between them and can firmly adhere them. Although not, it is usually in the range of 10 to 1,000 N.
- the post-heating temperature is preferably 120 ° C. or higher from the viewpoint of obtaining a sufficient curing rate, and preferably 260 ° C. or lower from the viewpoint of preventing deterioration of the substrate and the adhesive.
- the heating time is usually 1 minute or more from the viewpoint of bonding the wafer by curing, and more preferably 5 minutes or more from the viewpoint of stabilizing the physical properties of the adhesive, and has an adverse effect on the adhesive layer due to excessive heating. From the viewpoint of avoiding the above, it is usually 180 minutes or less, preferably 120 minutes or less. Heating can be performed using a hot plate, an oven, or the like.
- One purpose of the post-heat treatment is to more preferably cure the component (A).
- An example of the processing applied to the laminate used in the present invention is the processing of the back surface opposite to the circuit surface of the front surface of the semiconductor substrate, and typically, the thinning of the wafer by polishing the back surface of the wafer. Be done. Using such a thinned wafer, a through silicon via (TSV) or the like is formed, and then the thinned wafer is peeled off from the support to form a wafer laminate, which is three-dimensionally mounted. Further, before and after that, the back surface electrode of the wafer and the like are also formed.
- TSV through silicon via
- the thinning of the wafer and the TSV process are subjected to heat of 250 to 350 ° C. while being adhered to the support, and the adhesive layer contained in the laminate used in the present invention has heat resistance to the heat.
- a wafer having a diameter of 300 mm and a thickness of about 770 ⁇ m can be thinned to a thickness of about 80 ⁇ m to 4 ⁇ m by polishing the back surface opposite to the circuit surface on the front surface.
- the method for peeling the laminate used in the present invention includes, but is not limited to, solvent peeling, laser peeling, mechanical peeling with equipment having a sharp portion, peeling between the support and the wafer, and the like.
- the peeling is performed after processing such as thinning.
- the adhesive is not necessarily completely attached to the support substrate side and peeled off, and a part of the adhesive may be left behind on the processed substrate. Therefore, in the fourth step, the adhesive on the substrate can be sufficiently washed and removed by cleaning the surface of the substrate to which the residual adhesive is attached with the above-mentioned detergent composition of the present invention.
- the fourth step is a step of cleaning and removing the adhesive residue remaining on the surface of the semiconductor substrate after peeling with the cleaning agent composition of the present invention.
- the substrate is immersed in the cleaning agent composition of the present invention, and if necessary, means such as ultrasonic cleaning are also used in combination to clean and remove the adhesive residue.
- ultrasonic cleaning the conditions are appropriately determined in consideration of the surface condition of the substrate, but usually, the substrate is cleaned by cleaning under the conditions of 20 kHz to 5 MHz, 10 seconds to 30 minutes. The adhesive residue remaining on the top can be sufficiently removed.
- the method for manufacturing a processed substrate such as a thinned substrate of the present invention includes the above-mentioned first to fourth steps, but may include steps other than these steps.
- the substrate is immersed in various solvents or tape peeled to remove the adhesive residue. You may.
- the above structural and methodological elements relating to the first step to the fourth step may be variously changed as long as they do not deviate from the gist of the present invention.
- the device used in the present invention is as follows.
- Viscometer Rotational viscometer TVE-22H manufactured by Toki Sangyo Co., Ltd.
- Stirrer AS ONE Mix Rotor Variable 1-1186-12
- Stirrer H AS ONE heating type locking mixer HRM-1
- Contact type film thickness meter Wafer thickness measuring device WT-425 manufactured by Tokyo Seimitsu Co., Ltd.
- Adhesive Composition [Preparation Example 1] In a 600 mL stirring container dedicated to a rotation / revolution mixer, 150 g of a base polymer (manufactured by Wacker Chemi) consisting of a vinyl group-containing linear polydimethylsiloxane having a viscosity of 200 mPa ⁇ s and a vinyl group-containing MQ resin as (a1), and viscosity as (a2).
- a base polymer manufactured by Wacker Chemi
- Example 2 To 1.18 g of tetrabutylammonium fluoride trihydrate (manufactured by Kanto Chemical Co., Ltd.), 11.18 g of N, N-dimethylpropionamide and 11.18 g of tetrahydrofuran were added and stirred to obtain a detergent composition. ..
- Example 3 To 2.11 g of tetrabutylammonium fluoride trihydrate (manufactured by Kanto Chemical Co., Ltd.), 20.08 g of N, N-dimethylpropionamide and 20.08 g of tetrahydropyran were added and stirred to obtain a detergent composition. It was.
- Example 5 To 1.08 g of tetrabutylammonium fluoride trihydrate (manufactured by Kanto Chemical Co., Ltd.), 10.25 g of N, N-dimethylpropionamide and 10.25 g of mesitylene were added and stirred to obtain a detergent composition. ..
- Example 6 To 1.32 g of tetrabutylammonium fluoride trihydrate (manufactured by Kanto Chemical Co., Ltd.), 12.52 g of N, N-dimethylisobutyramide and 12.52 g of 1,2-diethoxyethane are added, stirred and washed. An agent composition was obtained.
- Example 7 To 1.32 g of tetrabutylammonium fluoride trihydrate (manufactured by Kanto Chemical Co., Ltd.), 12.52 g of N, N-dimethylisobutyramide and 12.52 g of tetrahydrofuran were added and stirred to obtain a detergent composition. ..
- Example 8 To 1.32 g of tetrabutylammonium fluoride trihydrate (manufactured by Kanto Chemical Co., Ltd.), 12.52 g of N, N-dimethylisobutyramide and 12.52 g of tetrahydropyran were added and stirred to obtain a detergent composition. It was.
- Example 9 To 1.32 g of tetrabutylammonium fluoride trihydrate (manufactured by Kanto Chemical Co., Ltd.), 12.52 g of N, N-dimethylisobutyramide and 12.52 g of cyclopentyl methyl ether are added and stirred to prepare a detergent composition. Obtained.
- Example 10 To 1.32 g of tetrabutylammonium fluoride trihydrate (manufactured by Kanto Chemical Co., Ltd.), 12.52 g of N, N-dimethylisobutyramide and 12.52 g of mesitylene were added and stirred to obtain a detergent composition. ..
- the etching rate was measured in order to evaluate the cleaning rate of the obtained detergent composition.
- the adhesive composition obtained in Preparation Example 1 was applied to a 12-inch silicon wafer with a spin coater to a thickness of 100 ⁇ m, and was thermoset at 150 ° C./15 minutes and 190 ° C./10 minutes.
- the wafer after film formation was cut out into a 4 cm square chip, and the film thickness was measured using a contact type film thickness meter. Then, the chips were placed in a stainless steel dish having a diameter of 9 cm, 7 mL of the obtained detergent composition was added, the lid was closed, and the chips were placed on a stirrer H and stirred and washed at 23 ° C. for 5 minutes.
- the chips are taken out, washed with isopropanol and pure water, dry-baked at 150 ° C. for 1 minute, and then the film thickness is measured again with a contact film thickness meter, and the film thickness decrease is measured before and after cleaning. Then, the etching rate [ ⁇ m / min] was calculated by dividing the reduced amount by the cleaning time, and used as an index of the cleaning power. The results are shown in Table 1.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Detergent Compositions (AREA)
Abstract
Description
なお、特許文献3~5には、N,N-ジメチルプロピオンアミドを用いたフォトレジスト剥離液組成物や洗浄剤組成物が開示されているが、いずれの文献にも、本発明の構成やその効果は具体的に開示されていない。
1.接着剤残留物を除去するために用いられる洗浄剤組成物であって、
第四級アンモニウム塩と、第1有機溶媒及び第2有機溶媒を含む溶媒とを含み、
上記第1有機溶媒が、式(Z)で表される酸アミド誘導体であり、
上記第2有機溶媒が、上記酸アミド誘導体とは異なる他の有機溶媒であり、
含水量が、4.0質量%未満であることを特徴とする洗浄剤組成物、
2.上記酸アミド誘導体が、N,N-ジメチルプロピオンアミド、N,N-ジエチルプロピオンアミド、N-エチル-N-メチルプロピオンアミド、N,N-ジメチル酪酸アミド、N,N-ジエチル酪酸アミド、N-エチル-N-メチル酪酸アミド、N,N-ジメチルイソ酪酸アミド、N,N-ジエチルイソ酪酸アミド及びN-エチル-N-メチルイソ酪酸アミドからなる群から選ばれる少なくとも1種を含む1の洗浄剤組成物、
3.上記酸アミド誘導体が、N,N-ジメチルプロピオンアミド、N,N-ジエチルプロピオンアミド、N,N-ジメチル酪酸アミド、N,N-ジエチル酪酸アミド、N,N-ジメチルイソ酪酸アミド及びN,N-ジエチルイソ酪酸アミドからなる群から選ばれる少なくとも1種を含む2の洗浄剤組成物、
4.上記酸アミド誘導体が、N,N-ジメチルプロピオンアミド及びN,N-ジメチルイソ酪酸アミドからなる群から選ばれる少なくとも1種を含む3の洗浄剤組成物、
5.上記第四級アンモニウム塩が、含ハロゲン第四級アンモニウム塩を含む1~4のいずれかの洗浄剤組成物、
6.上記含ハロゲン第四級アンモニウム塩が、含フッ素第四級アンモニウム塩を含む5の洗浄剤組成物、
7.上記含フッ素第四級アンモニウム塩が、フッ化テトラ(炭化水素)アンモニウムを含む6の洗浄剤組成物、
8.上記フッ化テトラ(炭化水素)アンモニウムが、フッ化テトラメチルアンモニウム、フッ化テトラエチルアンモニウム、フッ化テトラプロピルアンモニウム及びフッ化テトラブチルアンモニウムからなる群から選ばれる少なくとも1種を含む7の洗浄剤組成物、
9.上記第2有機溶媒が、アルキレングリコールジアルキルエーテル、芳香族炭化水素化合物及び環状構造含有エーテル化合物からなる群から選ばれる少なくとも1種を含む1~8のいずれかの洗浄剤組成物、
10.上記溶媒が、有機溶媒のみからなる1~9のいずれかの洗浄剤組成物、
11.上記酸アミド誘導体が、上記溶媒中に30~90質量%含まれる1~10の洗浄剤組成物、
12.上記含水量が、3.0質量%未満である1~11のいずれかの洗浄剤組成物、
13.上記含水量が、2.0質量%未満である12の洗浄剤組成物、
14.上記含水量が、1.0質量%未満である13の洗浄剤組成物、
15.1~14のいずれかの洗浄剤組成物を用い、基体上に残存した接着剤残留物を除去することを特徴とする洗浄方法、
16.半導体基板と、支持基板と、接着剤組成物から得られる接着層とを備える積層体を製造する第1工程、
得られた積層体の半導体基板を加工する第2工程、
加工後に半導体基板を剥離する第3工程、及び
剥離した半導体基板上に残存する接着剤残留物を洗浄剤組成物により洗浄除去する第4工程を含む、加工された半導体基板の製造方法において、
上記洗浄剤組成物として1~14のいずれかの洗浄剤組成物を用いることを特徴とする、加工された半導体基板の製造方法
を提供する。
本発明の洗浄剤組成物は、第四級アンモニウム塩を含む。
第四級アンモニウム塩は、第四級アンモニウムカチオンと、アニオンとから構成されるものであって、この種の用途に用いられるものであれば特に限定されるものではない。
第四級アンモニウム塩中、ハロゲン原子は、カチオンに含まれていても、アニオンに含まれていてもよいが、好ましくはアニオンに含まれる。
フッ化テトラ(炭化水素)アンモニウムにおける炭化水素基の具体例としては、炭素数1~20のアルキル基、炭素数2~20のアルケニル基、炭素数2~20のアルキニル基、炭素数6~20のアリール基等が挙げられる。
フッ化テトラアルキルアンモニウムの具体例としては、フッ化テトラメチルアンモニウム、フッ化テトラエチルアンモニウム、フッ化テトラプロピルアンモニウム、フッ化テトラブチルアンモニウム等が挙げられるが、これらに限定されない。中でも、フッ化テトラブチルアンモニウム(すなわち、テトラブチルアンモニウムフルオリド(TBAF))が好ましい。
第四級アンモニウム塩の量は、洗浄剤組成物に含まれる溶媒に溶解する限り特に制限されるものではないが、洗浄剤組成物に対して、通常0.1~30質量%である。
これらのうち、特に、N,N-ジメチルプロピオンアミド、N,N-ジメチルイソブチルアミドが好ましく、N,N-ジメチルプロピオンアミドがより好ましい。
このようなその他の有機溶媒は、この種の用途に用いられるものであって、第四級アンモニウム塩を溶解し、且つ、上記酸アミド誘導体と相溶性がある有機溶媒であれば特に限定されるものではない。
アルキレングリコールジアルキルエーテルは、1種単独で又は2種以上を組み合わせて用いることができる。
sは、ベンゼン環に置換する置換基R100の数を表し、2又は3である。
中でも、メシチレン、4-t-ブチルトルエンが好ましい。
環状構造含有エーテル化合物は、環状炭化水素化合物の環を構成する炭素原子の少なくとも1つが、酸素原子に置換されたものである。
典型的には、鎖状、分岐状又は環状の飽和炭化水素化合物がエポキシ化されたエポキシ化合物(すなわち、互いに隣り合う2つの炭素原子と酸素原子とが3員環を構成しているもの)や、炭素数が4以上の環状炭化水素化合物(但し、芳香族炭化水素化合物を除く。)の環を構成する炭素原子が酸素原子に置換されたエポキシ以外の環状エーテル化合物(エポキシ化合物は除かれる。以下同様。)が挙げられ、中でも、このような炭素数が4以上の環状炭化水素化合物としては、炭素数が4以上の環状飽和炭化水素化合物が好ましい。
エポキシ基の数は、特に限定されるものではないが、通常1~4であり、好ましくは1又は2である。
酸素原子(エーテル基)の数は、特に限定されるものではないが、通常1~3であり、好ましくは1又は2である。
環状アルキル分岐状アルキルエーテル化合物は、環状アルキル基と分岐状アルキル基と両者を連結するエーテル基とからなるものであり、その炭素数は、特に限定されるものではないが、通常6~40であり、好ましくは5~20である。
ジ(環状アルキル)エーテル化合物は、2つの環状アルキル基と、両者を連結するエーテル基とからなるものであり、その炭素数は、特に限定されるものではないが、通常6~40であり、好ましくは10~20である。
中でも、上記エポキシ以外の環状エーテル化合物としては、環状アルキル鎖状アルキルエーテル化合物、環状アルキル分岐状アルキルエーテル化合物が好ましく、環状アルキル鎖状アルキルエーテル化合物がより好ましい。
その具体例としては、メチル基、エチル基、1-n-プロピル基、1-n-ブチル基、1-n-ペンチル基、1-n-ヘキシル基、1-n-ヘプチル基、1-n-オクチル基、1-n-ノニル基、1-n-デシル基等が挙げられるが、これらに限定されない。
その具体例としては、イソプロピル基、イソブチル基、s-ブチル基、t-ブチル基等が挙げられるが、これらに限定されない。
その具体例としては、シクロプロピル基、シクロブチル基、シクロペンチル基、シクロヘプチル基、シクロヘキシル等のモノシクロアルキル基、ビシクロ[2.2.1]ヘプタン-1-イル基、ビシクロ[2.2.1]ヘプタン-2-イル基、ビシクロ[2.2.1]ヘプタン-7-イル基、ビシクロ[2.2.2]オクタン-1-イル基、ビシクロ[2.2.2]オクタン-2-イル基、ビシクロ[2.2.2]オクタン-7-イル基等のビシクロアルキル基等が挙げられるが、これらに限定されない。
環状アルキル分岐状アルキルエーテル化合物の具体例としては、シクロペンチルイソプロピルエーテル、シクロペンチルt-ブチルエーテル等を挙げることができるが、これらに限定されない。
ジ(環状アルキル)エーテル化合物の具体例としては、ジシクロペンチルエーテル、ジシクロヘキシルエーテル、シクロペンチルシクロヘキシルエーテル等を挙げることができるが、これらに限定されない。
本発明の洗浄剤組成物の含水量は、優れた洗浄能を有する洗浄剤組成物を再現性よく得る観点から、好ましくは3.0質量%未満、より好ましくは2.0質量%未満、より一層好ましくは1.5質量%未満、更に好ましくは1.0質量%未満、更に一層好ましくは0.8質量%未満である。
更に、本発明の好ましい態様においては、洗浄剤組成物が含む溶媒は、有機溶媒のみからなる。溶媒として有機溶媒のみを用いることにより、優れた洗浄能を有する洗浄剤組成物を再現性よく得ることができる。
従って、本発明の洗浄剤組成物は、通常、溶媒として有機溶媒のみを含む。なお、「有機溶媒のみ」とは、意図して溶媒として用いられるものが有機溶媒のみという意味であり、有機溶媒やその他の成分(例えば水和物)に含まれる水の存在までをも否定するものではない。
換言すると、本発明の洗浄剤組成物は、実質的に水を含有しない点に特徴がある。ここで、実質的に水を含有しないとは、水を配合しないことであり、上述したとおり、他の成分の水和物としての水や成分と共に混入する微量水分を排除するものではない。
ただし、溶媒として有機溶媒のみを用いる場合も、本発明の洗浄剤組成物は、上述の含水量の範囲を満たす必要がある。
各成分は、固形分の沈澱や組成物の分離等の不具合が最終的に発生する等の問題が生じない限り、任意の順序で混合することができる。
即ち、洗浄剤組成物の全ての成分のうち、一部を予め混合し、次いで残りの成分を混合してもよく、或いは、一度に全部の成分を混合してもよい。また、必要があれば、洗浄剤組成物をろ過してもよく、或いは、混合した後の不溶成分を避けて上澄みを回収し、それを洗浄剤組成物として用いてもよい。更に、用いる成分が、例えば吸湿性や潮解性がある場合、洗浄剤組成物の調製の作業の全部又は一部を不活性ガス下で行ってもよい。
具体的には、洗浄速度については、室温(23℃)において、接着剤組成物から得られる接着層を洗浄剤組成物に5分間接触させた場合において接触の前後で膜厚減少を測定し、減少した分を洗浄時間で割ることにより算出されるエッチングレート[μm/min]が、本発明の洗浄剤組成物は、通常8.0[μm/min]以上であり、好ましい態様においては9.0[μm/min]以上であり、より好ましい態様においては9.5[μm/min]以上であり、より一層好ましい態様においては10.0[μm/min]以上であり、更に好ましい態様においては10.5[μm/min]以上であり、更に一層好ましい態様においては11.0[μm/min]以上である。
また、洗浄持続力については、室温(23℃)において、接着剤組成物から得られる接着性固体1gを洗浄剤組成物2gに接触させた場合において、本発明の洗浄剤組成物は、通常12~24時間で接着性固体の大部分を溶解し、好ましい態様においては2~12時間で接着性固体を溶解し切り、より好ましい態様においては1~2時間で接着性固体を溶解し切る。
本発明の洗浄剤組成物は、半導体基板等の各種基板の表面を洗浄するために用いられるものであり、その洗浄の対象物は、シリコン半導体基板に限定されるものではなく、例えば、ゲルマニウム基板、ガリウム-ヒ素基板、ガリウム-リン基板、ガリウム-ヒ素-アルミニウム基板、アルミメッキシリコン基板、銅メッキシリコン基板、銀メッキシリコン基板、金メッキシリコン基板、チタンメッキシリコン基板、窒化ケイ素膜形成シリコン基板、酸化ケイ素膜形成シリコン基板、ポリイミド膜形成シリコン基板、ガラス基板、石英基板、液晶基板、有機EL基板等の各種基板をも含む。
具体的には、半導体基板と、支持基板と、接着剤組成物から得られる接着層とを備える積層体を製造する第1工程、得られた積層体の半導体基板を加工する第2工程、加工後に半導体基板を剥離する第3工程、及び剥離した半導体基板上に残存する接着剤残留物を洗浄剤組成物により洗浄除去する第4工程を含む、加工基板の製造方法において、洗浄剤組成物として本発明の洗浄剤組成物が使用される。
従って、以下、ヒドロシリル化反応により硬化する成分(A)を含むポリシロキサン系接着剤(接着剤組成物)と本発明の洗浄剤組成物とを用いた加工基板の製造方法について説明するが、本発明は、これに限定されるわけではない。
接着剤組成物が含むヒドロシリル化反応により硬化する成分(A)は、例えば、SiO2で表されるシロキサン単位(Q単位)、R1R2R3SiO1/2で表されるシロキサン単位(M単位)、R4R5SiO2/2で表されるシロキサン単位(D単位)及びR6SiO3/2で表されるシロキサン単位(T単位)からなる群より選ばれる1種又は2種以上の単位を含むポリシロキサン(A1)と、白金族金属系触媒(A2)とを含み、上記ポリシロキサン(A1)は、SiO2で表されるシロキサン単位(Q’単位)、R1’R2’R3’SiO1/2で表されるシロキサン単位(M’単位)、R4’R5’SiO2/2で表されるシロキサン単位(D’単位)及びR6’SiO3/2で表されるシロキサン単位(T’単位)からなる群より選ばれ1種又は2種以上の単位を含むとともに、上記M’単位、D’単位及びT’単位からなる群より選ばれる少なくとも1種を含むポリオルガノシロキサン(a1)と、SiO2で表されるシロキサン単位(Q”単位)、R1”R2”R3”SiO1/2で表されるシロキサン単位(M”単位)、R4”R5”SiO2/2で表されるシロキサン単位(D”単位)及びR6”SiO3/2で表されるシロキサン単位(T”単位)からなる群より選ばれる1種又は2種以上の単位を含むとともに、上記M”単位、D”単位及びT”単位からなる群より選ばれる少なくとも1種を含むポリオルガノシロキサン(a2)とを含む。
R1’~R6’は、ケイ素原子に結合する基であり、互いに独立に、アルキル基又はアルケニル基を表すが、R1’~R6’の少なくとも1つは、アルケニル基である。
R1”~R6”は、ケイ素原子に結合する基又は原子であり、互いに独立に、アルキル基又は水素原子を表すが、R1”~R6”の少なくとも1つは、水素原子である。
中でも、メチル基が好ましい。
中でも、エテニル基、2-プロペニル基が好ましい。
このような白金系の金属触媒は、ポリオルガノシロキサン(a1)のアルケニル基とポリオルガノシロキサン(a2)のSi-H基とのヒドロシリル化反応を促進するための触媒である。
白金とオレフィン類との錯体としては、例えばジビニルテトラメチルジシロキサンと白金との錯体が挙げられるが、これに限定されない。
本発明において、エポキシ基含有ポリオルガノシロキサンの好ましい一例としては、エポキシ基含有ポリジメチルシロキサンを挙げることができるが、これに限定されない。
R21は、ケイ素原子に結合する基であり、アルキル基を表し、アルキル基の具体例としては、上述の例示を挙げることができる。中でも、R21としては、メチル基が好ましい。
メチル基含有ポリオルガノシロキサンとの好ましい一例としては、ポリジメチルシロキサンを挙げることができるが、これに限定されない。
接着剤組成物の粘度は、通常、25℃で1,000~20,000mPa・sであり、用いる塗布方法、所望の膜厚等の各種要素を考慮して、用いる溶媒の種類やそれらの比率、膜構成成分濃度等を変更することで調整可能である。
その混合順序は特に限定されるものではないが、容易にかつ再現性よく、接着剤組成物を製造できる方法の一例としては、例えば、膜構成成分の全てを溶媒に溶解させる方法や、膜構成成分の一部を溶媒に溶解させ、膜構成成分の残りを溶媒に溶解させ、得られた溶液を混合する方法が挙げられる。この場合において、必要であれば、一部の溶媒や、溶解性に優れる膜構成成分を最後に加えることもできる。
組成物の調製では、成分が分解したり変質したりしない範囲で、適宜加熱してもよい。また、組成物中の異物を除去する目的で、組成物を製造する途中段階でまたは全ての成分を混合した後に、サブマイクロメートルオーダーのフィルター等を用いてろ過してもよい。
ウエハーとしては、例えば直径300mm、厚さ770μm程度のシリコンウエハーやガラスウエハーが挙げられるが、これらに限定されない。
支持体(キャリア)は、特に限定されるものではないが、例えば直径300mm、厚さ700μm程度のシリコンウエハーを挙げることができるが、これに限定されない。
本発明で用いる積層体に施される加工の一例としては、半導体基板の表面の回路面とは反対の裏面の加工が挙げられ、典型的には、ウエハー裏面の研磨によるウエハーの薄化が挙げられる。このような薄化されたウエハーを用いて、シリコン貫通電極(TSV)等の形成を行い、次いで支持体から薄化ウエハーを剥離してウエハーの積層体を形成し、3次元実装化される。また、それに前後してウエハー裏面電極等の形成も行われる。ウエハーの薄化とTSVプロセスには支持体に接着された状態で250~350℃の熱が負荷されるが、本発明で用いる積層体が含む接着層は、その熱に対する耐熱性を有している。
例えば、直径300mm、厚さ770μm程度のウエハーは、表面の回路面とは反対の裏面を研磨して、厚さ80μm~4μm程度まで薄化することができる。
本発明で用いる積層体の剥離方法は、溶剤剥離、レーザー剥離、鋭部を有する機材による機械的な剥離、支持体とウエハーとの間で引きはがす剥離等が挙げられるが、これらに限定されない。通常、剥離は、薄化等の加工の後に行われる。
第3工程では、必ずしも接着剤が完全に支持基板側に付着して剥離されるものではなく、加工された基板上に一部取り残されることがある。そこで、第4工程において、残留した接着剤が付着された基板の表面を、上述した本発明の洗浄剤組成物で洗浄することにより、基板上の接着剤を十分に洗浄除去することができる。
第4工程は、剥離後の半導体基板の表面に残存する接着剤残留物を、本発明の洗浄剤組成物により洗浄除去する工程であり、具体的には、例えば、接着剤が残留する薄化基板を本発明の洗浄剤組成物に浸漬し、必要があれば超音波洗浄等の手段も併用して、接着剤残留物を洗浄除去するものである。
超音波洗浄を用いる場合、その条件は、基板の表面の状態を考慮して適宜決定されるものであるが、通常、20kHz~5MHz、10秒~30分の条件で洗浄処理することにより、基板上に残る接着剤残留物を十分取り除くことができる。
(1)攪拌機(自転公転ミキサー):(株)シンキー製 自転公転ミキサー ARE―500
(2)粘度計:東機産業(株)製 回転粘度計TVE-22H
(3)撹拌機:アズワン製 ミックスローターバリアブル 1―1186-12
(4)撹拌機H:アズワン製 加温型ロッキングミキサー HRM-1
(5)接触式膜厚計:(株)東京精密製 ウエハ厚さ測定装置 WT-425
[調製例1]
自転公転ミキサー専用600mL撹拌容器に、(a1)として粘度200mPa・sのビニル基含有直鎖状ポリジメチルシロキサンとビニル基含有のMQ樹脂からなるベースポリマー(ワッカーケミ社製)150g、(a2)として粘度100mPa・sのSiH基含有直鎖上ポリジメチルシロキサン(ワッカーケミ社製)15.81g、(A3)として1-エチニル-1-シクロヘキサノール(ワッカーケミ社製)0.17gを入れ、自転公転ミキサーで5分間撹拌した。
得られた混合物に、スクリュー管50mLに(A2)として白金触媒(ワッカーケミ(株)製)0.33gと(a1)として粘度1000mPa・sのビニル基含有直鎖状ポリジメチルシロキサン(ワッカーケミ社製)9.98gを自転公転ミキサーで5分間撹拌して別途得られた混合物から0.52gを加え、自転公転ミキサーで5分間撹拌し、得られた混合物をナイロンフィルター300メッシュでろ過し、接着剤組成物を得た。なお、回転粘度計を用いて測定した接着剤組成物の粘度は、9900mPa・sであった。
自転公転ミキサー専用600mL撹拌容器に、(a1)としてビニル基含有のMQ樹脂からなるベースポリマー(ワッカーケミ社製)95g、溶媒としてp-メンタン(日本テルペン化学(株)製)93.4g及び(A3)として1,1-ジフェニル-2-プロピン-1-オール(東京化成工業(株)製)0.41gを入れ、自転公転ミキサーで5分間撹拌した。
得られた混合物に、(a2)として粘度100mPa・sのSiH基含有直鎖状ポリジメチルシロキサン(ワッカーケミ社製)、(a1)として粘度200mPa・sのビニル基含有直鎖状ポリジメチルシロキサン(ワッカーケミ社製)29.5g、(B)としてポリジメチルシロキサンである粘度1000000mm2/sのポリオルガノシロキサン(ワッカーケミ社製、商品名AK1000000)、(A3)として1-エチニル-1-シクロヘキサノール(ワッカーケミ社製)0.41gを加え、自転公転ミキサーで更に5分間撹拌した。
その後、得られた混合物に、スクリュー管50mLに(A2)として白金触媒(ワッカーケミ(株)製)0.20gと(a1)として粘度1000mPa・sのビニル基含有直鎖状ポリジメチルシロキサン(ワッカーケミ社製)17.7gを自転公転ミキサーで5分間撹拌して別途得られた混合物から14.9gを加え、自転公転ミキサーで更に5分間撹拌し、得られた混合物をナイロンフィルター300メッシュでろ過し、接着剤組成物を得た。なお、回転粘度計を用いて測定した接着剤組成物の粘度は、4600mPa・sであった。
[実施例1]
テトラブチルアンモニウムフルオリド3水和物(関東化学(株)製)1.50gに、N,N-ジメチルプロピオンアミド14.25gと1,2-ジエトキシエタン14.25gを加えて撹拌し、洗浄剤組成物を得た。
テトラブチルアンモニウムフルオリド3水和物(関東化学(株)製)1.18gに、N,N-ジメチルプロピオンアミド11.18gとテトラヒドロフラン11.18gを加えて撹拌し、洗浄剤組成物を得た。
テトラブチルアンモニウムフルオリド3水和物(関東化学(株)製)2.11gに、N,N-ジメチルプロピオンアミド20.08gとテトラヒドロピラン20.08gを加えて撹拌し、洗浄剤組成物を得た。
テトラブチルアンモニウムフルオリド3水和物(関東化学(株)製)1.88gに、N,N-ジメチルプロピオンアミド17.81gとシクロペンチルメチルエーテル17.81gを加えて撹拌し、洗浄剤組成物を得た。
テトラブチルアンモニウムフルオリド3水和物(関東化学(株)製)1.08gに、N,N-ジメチルプロピオンアミド10.25gとメシチレン10.25gを加えて撹拌し、洗浄剤組成物を得た。
テトラブチルアンモニウムフルオリド3水和物(関東化学(株)製)1.32gに、N,N-ジメチルイソブチルアミド12.52gと1,2-ジエトキシエタン12.52gを加えて撹拌し、洗浄剤組成物を得た。
テトラブチルアンモニウムフルオリド3水和物(関東化学(株)製)1.32gに、N,N-ジメチルイソブチルアミド12.52gとテトラヒドロフラン12.52gを加えて撹拌し、洗浄剤組成物を得た。
テトラブチルアンモニウムフルオリド3水和物(関東化学(株)製)1.32gに、N,N-ジメチルイソブチルアミド12.52gとテトラヒドロピラン12.52gを加えて撹拌し、洗浄剤組成物を得た。
テトラブチルアンモニウムフルオリド3水和物(関東化学(株)製)1.32gに、N,N-ジメチルイソブチルアミド12.52gとシクロペンチルメチルエーテル12.52gを加えて撹拌し、洗浄剤組成物を得た。
テトラブチルアンモニウムフルオリド3水和物(関東化学(株)製)1.32gに、N,N-ジメチルイソブチルアミド12.52gとメシチレン12.52gを加えて撹拌し、洗浄剤組成物を得た。
テトラブチルアンモニウムフルオリド3水和物(関東化学(株)製)0.50gに、N,N-ジメチルアセトアミド9.50gを加えて撹拌し、洗浄剤組成物を得た。
テトラブチルアンモニウムフルオリド3水和物(関東化学(株)製)5gに、1,3-ジメチル-2-イミダゾリジノン95gを加えて撹拌し、洗浄剤組成物を得た。
テトラブチルアンモニウムフルオリド3水和物(関東化学(株)製)5gに、N-メチル-2-ピロリドン脱水95gを加えて撹拌し、洗浄剤組成物を得た。
テトラブチルアンモニウムフルオリド3水和物(関東化学(株)製)5gに、N、N-ジメチルプロピオンアミド(東京化成工業(株))47.5gとテトラヒドロフラン(関東化学(株)製)47.5gを加えて撹拌し、さらに純水5gを加えてさらに撹拌し、洗浄剤組成物を得た。
市販のシリコーンクリーナー 「KSR-1」(関東化学(株)製)を洗浄液組成物として使用した。
優れた洗浄剤組成物は、接着剤残留物と接触した直後からそれを溶解させる高い洗浄速度と、それを持続する優れた洗浄持続力が必要であることから、以下の評価を行った。より高い洗浄速度とより優れた洗浄持続力を兼ね備えることで、より効果的な洗浄が期待できる。
洗浄剤組成物の含水量は、微量水分測定装置 CA-200型((株)三菱ケミカルアナリテック製)を用いたカールフィッシャー法によって、測定した。
得られた洗浄剤組成物の洗浄速度を評価するためにエッチングレートの測定を行った。調製例1で得られた接着剤組成物をスピンコーターで12インチシリコンウエハに厚さ100μmとなるように塗布し、150℃/15分、190℃/10分で熱硬化した。成膜後のウエハーを4cm角のチップに切り出し、接触式膜厚計を用いて膜厚を測定した。その後、チップを直径9cmのステンレスシャーレに入れ、得られた洗浄剤組成物7mLを加えて蓋をした後、撹拌機Hに載せて、23℃で5分間撹拌・洗浄した。洗浄後、チップを取り出し、イソプロパノール、純水で洗浄して150℃で1分間、ドライベークをした後、再度、接触式膜厚計で膜厚を測定し、洗浄の前後で膜厚減少を測定し、減少した分を洗浄時間で割ることによりエッチングレート[μm/min]を算出し、洗浄力の指標とした。結果は表1に示す。
得られた洗浄剤組成物の洗浄持続力を評価するために接着剤の溶解試験を行った。調製例2で得られた接着剤組成物をスピンコーターで12インチシリコンウエハに塗布し、120℃/1.5分、200℃/10分で熱硬化した。その後、カッターの刃を使用して、12インチシリコンウエハから接着剤組成物の硬化物を削り出した。9mLのスクリュー管に接着剤組成物の硬化物1gを量り取り、その後、得られた洗浄剤組成物2gを加え、23℃で硬化物の溶解状況を確認した。1~2時間で硬化物を完全に溶かし切る場合を「Excellent」、2~12時間で硬化物を完全に溶かし切る場合を「Very Good」、12~24時間で硬化物の大部分を溶かす場合を「Good」、時間をかけても硬化物の大部分が溶け残る場合を「Bad」と表記した。結果は表1に示す。
Claims (16)
- 上記酸アミド誘導体が、N,N-ジメチルプロピオンアミド、N,N-ジエチルプロピオンアミド、N-エチル-N-メチルプロピオンアミド、N,N-ジメチル酪酸アミド、N,N-ジエチル酪酸アミド、N-エチル-N-メチル酪酸アミド、N,N-ジメチルイソ酪酸アミド、N,N-ジエチルイソ酪酸アミド及びN-エチル-N-メチルイソ酪酸アミドからなる群から選ばれる少なくとも1種を含む請求項1記載の洗浄剤組成物。
- 上記酸アミド誘導体が、N,N-ジメチルプロピオンアミド、N,N-ジエチルプロピオンアミド、N,N-ジメチル酪酸アミド、N,N-ジエチル酪酸アミド、N,N-ジメチルイソ酪酸アミド及びN,N-ジエチルイソ酪酸アミドからなる群から選ばれる少なくとも1種を含む請求項2記載の洗浄剤組成物。
- 上記酸アミド誘導体が、N,N-ジメチルプロピオンアミド及びN,N-ジメチルイソ酪酸アミドからなる群から選ばれる少なくとも1種を含む請求項3記載の洗浄剤組成物。
- 上記第四級アンモニウム塩が、含ハロゲン第四級アンモニウム塩を含む請求項1~4のいずれか1項記載の洗浄剤組成物。
- 上記含ハロゲン第四級アンモニウム塩が、含フッ素第四級アンモニウム塩を含む請求項5記載の洗浄剤組成物。
- 上記含フッ素第四級アンモニウム塩が、フッ化テトラ(炭化水素)アンモニウムを含む請求項6記載の洗浄剤組成物。
- 上記フッ化テトラ(炭化水素)アンモニウムが、フッ化テトラメチルアンモニウム、フッ化テトラエチルアンモニウム、フッ化テトラプロピルアンモニウム及びフッ化テトラブチルアンモニウムからなる群から選ばれる少なくとも1種を含む請求項7記載の洗浄剤組成物。
- 上記第2有機溶媒が、アルキレングリコールジアルキルエーテル、芳香族炭化水素化合物及び環状構造含有エーテル化合物からなる群から選ばれる少なくとも1種を含む請求項1~8のいずれか1項記載の洗浄剤組成物。
- 上記溶媒が、有機溶媒のみからなる請求項1~9のいずれか1項記載の洗浄剤組成物。
- 上記酸アミド誘導体が、上記溶媒中に30~90質量%含まれる請求項1~10のいずれか1項記載の洗浄剤組成物。
- 上記含水量が、3.0質量%未満である請求項1~11のいずれか1項記載の洗浄剤組成物。
- 上記含水量が、2.0質量%未満である請求項12記載の洗浄剤組成物。
- 上記含水量が、1.0質量%未満である請求項13記載の洗浄剤組成物。
- 請求項1~14のいずれか1項記載の洗浄剤組成物を用い、基体上に残存した接着剤残留物を除去することを特徴とする洗浄方法。
- 半導体基板と、支持基板と、接着剤組成物から得られる接着層とを備える積層体を製造する第1工程、
得られた積層体の半導体基板を加工する第2工程、
加工後に半導体基板を剥離する第3工程、及び
剥離した半導体基板上に残存する接着剤残留物を洗浄剤組成物により洗浄除去する第4工程を含む、加工された半導体基板の製造方法において、
上記洗浄剤組成物として請求項1~14のいずれか1項記載の洗浄剤組成物を用いることを特徴とする、加工された半導体基板の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020227020740A KR102453332B1 (ko) | 2019-11-20 | 2020-11-16 | 세정제 조성물 및 세정 방법 |
US17/777,772 US11732214B2 (en) | 2019-11-20 | 2020-11-16 | Cleaning agent composition comprising an alkylamide solvent and a fluorine-containing quaternary ammonium salt |
JP2021558363A JP7121355B2 (ja) | 2019-11-20 | 2020-11-16 | 洗浄剤組成物及び洗浄方法 |
CN202080079477.7A CN114730709A (zh) | 2019-11-20 | 2020-11-16 | 清洗剂组合物以及清洗方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019-209959 | 2019-11-20 | ||
JP2019209959 | 2019-11-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2021100651A1 true WO2021100651A1 (ja) | 2021-05-27 |
Family
ID=75980755
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2020/042594 WO2021100651A1 (ja) | 2019-11-20 | 2020-11-16 | 洗浄剤組成物及び洗浄方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11732214B2 (ja) |
JP (1) | JP7121355B2 (ja) |
KR (1) | KR102453332B1 (ja) |
CN (1) | CN114730709A (ja) |
TW (1) | TWI785418B (ja) |
WO (1) | WO2021100651A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023042811A1 (ja) * | 2021-09-16 | 2023-03-23 | 日産化学株式会社 | 半導体基板の洗浄方法、加工された半導体基板の製造方法、及び、剥離及び溶解用組成物 |
WO2024058018A1 (ja) * | 2022-09-13 | 2024-03-21 | 日産化学株式会社 | 半導体基板の洗浄方法、加工された半導体基板の製造方法、及び、剥離及び溶解用組成物 |
WO2024058025A1 (ja) * | 2022-09-13 | 2024-03-21 | 日産化学株式会社 | 半導体基板の洗浄方法、加工された半導体基板の製造方法、及び、剥離及び溶解用組成物 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170158888A1 (en) * | 2015-12-04 | 2017-06-08 | Dongwoo Fine-Chem Co., Ltd. | Composition for removing silicone resins and method of thinning substrate by using the same |
WO2018088202A1 (ja) * | 2016-11-10 | 2018-05-17 | 東京応化工業株式会社 | 洗浄液及び基板を洗浄する方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4770713A (en) * | 1986-12-10 | 1988-09-13 | Advanced Chemical Technologies, Inc. | Stripping compositions containing an alkylamide and an alkanolamine and use thereof |
TW392239B (en) * | 1998-08-14 | 2000-06-01 | Mitsubishi Gas Chemical Co | Cleaning liquid for semiconductor devices |
US6818608B2 (en) | 2002-02-01 | 2004-11-16 | John C. Moore | Cured polymers dissolving compositions |
JP2004239986A (ja) | 2003-02-03 | 2004-08-26 | Mitsubishi Gas Chem Co Inc | レジスト剥離液組成物 |
DE10343390A1 (de) * | 2003-09-19 | 2005-04-14 | Bayer Cropscience Gmbh | Tensid/Lösungsmittelgemische |
US20080234162A1 (en) * | 2007-03-21 | 2008-09-25 | General Chemical Performance Products Llc | Semiconductor etch residue remover and cleansing compositions |
WO2010070819A1 (ja) * | 2008-12-19 | 2010-06-24 | 三洋化成工業株式会社 | 電子材料用洗浄剤 |
US9081291B2 (en) * | 2009-08-11 | 2015-07-14 | Dongwoo Fine-Chem Co., Ltd. | Resist stripping solution composition, and method for stripping resist by using same |
KR20140024625A (ko) | 2012-08-20 | 2014-03-03 | 주식회사 동진쎄미켐 | 포토레지스트 제거용 박리액 조성물 |
KR101946379B1 (ko) | 2012-11-20 | 2019-02-11 | 주식회사 동진쎄미켐 | 포토레지스트 박리액 조성물 및 포토레지스트의 박리방법 |
JP2014133855A (ja) | 2012-12-11 | 2014-07-24 | Fujifilm Corp | シロキサン樹脂の除去剤、それを用いたシロキサン樹脂の除去方法並びに半導体基板製品及び半導体素子の製造方法 |
CA2954811C (en) * | 2014-07-18 | 2022-11-22 | Herve Bottin | Interlocking wall panels for modular building units |
CN105368611B (zh) * | 2014-08-06 | 2018-12-07 | 东友精细化工有限公司 | 清洁组合物 |
KR20160017606A (ko) | 2014-08-06 | 2016-02-16 | 동우 화인켐 주식회사 | 세정제 조성물 |
US10155185B2 (en) * | 2016-05-09 | 2018-12-18 | Tokyo Ohka Kogyo Co., Ltd. | Polyimide-based resin film cleaning liquid, method for cleaning polyimide-based resin film, method for producing polyimide coating, method for producing filter, filter medium, or filter device, and method for producing chemical solution for lithography |
KR20190113316A (ko) * | 2018-03-28 | 2019-10-08 | 재원산업 주식회사 | 실록산계 접착제 제거용 조성물 및 이를 이용한 박형 웨이퍼의 제조방법 |
-
2020
- 2020-11-16 CN CN202080079477.7A patent/CN114730709A/zh active Pending
- 2020-11-16 KR KR1020227020740A patent/KR102453332B1/ko active IP Right Grant
- 2020-11-16 WO PCT/JP2020/042594 patent/WO2021100651A1/ja active Application Filing
- 2020-11-16 JP JP2021558363A patent/JP7121355B2/ja active Active
- 2020-11-16 US US17/777,772 patent/US11732214B2/en active Active
- 2020-11-17 TW TW109140163A patent/TWI785418B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170158888A1 (en) * | 2015-12-04 | 2017-06-08 | Dongwoo Fine-Chem Co., Ltd. | Composition for removing silicone resins and method of thinning substrate by using the same |
WO2018088202A1 (ja) * | 2016-11-10 | 2018-05-17 | 東京応化工業株式会社 | 洗浄液及び基板を洗浄する方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023042811A1 (ja) * | 2021-09-16 | 2023-03-23 | 日産化学株式会社 | 半導体基板の洗浄方法、加工された半導体基板の製造方法、及び、剥離及び溶解用組成物 |
JP7468787B2 (ja) | 2021-09-16 | 2024-04-16 | 日産化学株式会社 | 半導体基板の洗浄方法、加工された半導体基板の製造方法、及び、剥離及び溶解用組成物 |
JP7513158B2 (ja) | 2021-09-16 | 2024-07-09 | 日産化学株式会社 | 半導体基板の洗浄方法、加工された半導体基板の製造方法、及び、剥離及び溶解用組成物 |
WO2024058018A1 (ja) * | 2022-09-13 | 2024-03-21 | 日産化学株式会社 | 半導体基板の洗浄方法、加工された半導体基板の製造方法、及び、剥離及び溶解用組成物 |
WO2024058025A1 (ja) * | 2022-09-13 | 2024-03-21 | 日産化学株式会社 | 半導体基板の洗浄方法、加工された半導体基板の製造方法、及び、剥離及び溶解用組成物 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2021100651A1 (ja) | 2021-05-27 |
TW202124696A (zh) | 2021-07-01 |
CN114730709A (zh) | 2022-07-08 |
US20230002701A1 (en) | 2023-01-05 |
TWI785418B (zh) | 2022-12-01 |
JP7121355B2 (ja) | 2022-08-18 |
KR102453332B1 (ko) | 2022-10-11 |
KR20220104767A (ko) | 2022-07-26 |
US11732214B2 (en) | 2023-08-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7121355B2 (ja) | 洗浄剤組成物及び洗浄方法 | |
JP7219423B2 (ja) | 洗浄剤組成物及び洗浄方法 | |
JP7530048B2 (ja) | 洗浄剤組成物及び洗浄方法 | |
JP7323870B2 (ja) | 洗浄剤組成物及び洗浄方法 | |
JP7495672B2 (ja) | 洗浄剤組成物及び洗浄方法 | |
JP7510120B2 (ja) | 洗浄剤組成物の洗浄能の向上方法、洗浄剤組成物の製造方法 | |
JP7530035B2 (ja) | バンプ付き半導体基板の洗浄方法 | |
JP7498427B2 (ja) | 洗浄剤組成物及び加工された半導体基板の製造方法 | |
JP2021082737A (ja) | 洗浄剤組成物の製造方法、洗浄剤組成物入り容器の製造方法及び洗浄剤組成物を容器に充填して保存する方法 | |
JP7530049B2 (ja) | 洗浄剤組成物及び洗浄方法 | |
JP7545123B2 (ja) | 洗浄剤組成物の製造方法及び加工された半導体基板の製造方法 | |
WO2021201047A1 (ja) | 洗浄剤組成物及び加工された半導体基板の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 20891217 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2021558363 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20227020740 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 20891217 Country of ref document: EP Kind code of ref document: A1 |