WO2010079753A1 - Appareil de traitement par plasma - Google Patents

Appareil de traitement par plasma Download PDF

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Publication number
WO2010079753A1
WO2010079753A1 PCT/JP2010/000057 JP2010000057W WO2010079753A1 WO 2010079753 A1 WO2010079753 A1 WO 2010079753A1 JP 2010000057 W JP2010000057 W JP 2010000057W WO 2010079753 A1 WO2010079753 A1 WO 2010079753A1
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WO
WIPO (PCT)
Prior art keywords
shower
substrate
base
plate
processing apparatus
Prior art date
Application number
PCT/JP2010/000057
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English (en)
Japanese (ja)
Inventor
若松貞次
亀崎厚治
菊池正志
神保洋介
江藤謙次
浅利伸
内田寛人
Original Assignee
株式会社アルバック
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to CN2010800040969A priority Critical patent/CN102272894A/zh
Priority to KR1020117015198A priority patent/KR101290738B1/ko
Priority to JP2010545748A priority patent/JP5394403B2/ja
Priority to DE112010000717.9T priority patent/DE112010000717B4/de
Publication of WO2010079753A1 publication Critical patent/WO2010079753A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a plasma processing apparatus.
  • This application claims priority based on Japanese Patent Application No. 2009-004022 filed on Jan. 9, 2009, the contents of which are incorporated herein by reference.
  • a plasma CVD apparatus that decomposes a source gas using plasma and forms a thin film on a substrate is known (see, for example, Patent Document 1).
  • a solar cell particularly a solar cell using microcrystal silicon ( ⁇ c-Si)
  • ⁇ c-Si microcrystal silicon
  • a high-pressure depletion method is effective in a state where the distance between the shower plate surface for ejecting deposition gas to the substrate surface and the substrate surface is narrow (narrow gap). For example, as shown in FIG.
  • film formation is performed in a state where mask members 135 and 143 made of an insulating material are disposed on the peripheral portion of the substrate 10 and the peripheral portion of the shower plate 105.
  • the mask members 135 and 143 prevent the plasma generated in the film formation space from diffusing to other than between the electrodes (between the shower plate 105 and the substrate 10), that is, to confine the plasma in the film formation space. Is provided. Further, each of the constituent members arranged in the CVD apparatus is thermally expanded, so that friction is generated between the members. Mask members 135 and 143 are provided to reduce particles generated due to the friction as much as possible.
  • a mask member 135 having a surface 135c is provided on the peripheral edge of the substrate 10. Further, the mask member 143 having the surface 143a is provided at the peripheral edge of the shower plate 105 having the surface 105a. Further, the shower plate 105 and the substrate 10 are arranged so that the surface 105 a of the shower plate 105 and the upper surface 10 a of the substrate 10 face each other.
  • the distance between the surface 135c and the surface 105a is smaller than the distance between the upper surface 10a and the surface 105a
  • the distance between the surface 143a and the surface 135c is It is smaller than the distance between 105a and the surface 135c. Therefore, it is difficult to realize a narrow gap process in which film formation is performed with the distance between the upper surface 10a of the substrate 10 and the surface 105a of the shower plate 105 set to, for example, 10 mm or less.
  • the mask members 135 and 143 processed to be thin are used in the conventional plasma CVD apparatus 100, there is a problem that the mask members 135 and 143 are frequently cracked. If the distance between the substrate 10 and the shower plate 105 is set as a narrow gap in the plasma CVD apparatus 100 without changing the configuration of the conventional plasma CVD apparatus 100, the distance between the mask members 135 and 143 facing each other is considerably large. Narrow. As a result, the path (gap) through which the film forming gas is exhausted becomes narrow.
  • the present invention has been made in view of the above circumstances, and provides a plasma processing apparatus capable of confining plasma between electrodes even when a narrow gap process is performed.
  • a plasma processing apparatus includes a chamber in which a process gas is introduced and plasma made of the process gas is generated, a first base surface on which a substrate is placed, A second base surface provided at a peripheral edge portion of the first base surface; and a base step portion provided between the first base surface and the second base surface, and disposed in the chamber.
  • a base member and a height that is equal to or less than a height (distance) from the second base surface to the upper surface of the substrate placed on the first base surface, and is disposed on the second base surface;
  • An insulating plate formed of an insulating material; a first shower surface in which an ejection hole is formed; a second shower surface provided at a peripheral edge of the first shower surface; and the first shower surface and the second shower shower between the surface It has a stepped portion, supplies the process gas toward the substrate, and is below the height (distance) from the shower plate disposed in the chamber and the second shower surface to the first shower surface.
  • An electrode mask having a height and disposed on the second shower surface to face the insulating plate and formed of an insulating material.
  • an alternating voltage is applied between the electrodes (between the base member and the shower plate) arranged in the chamber.
  • plasma composed of process gas is generated between the electrodes.
  • a step portion is formed between a plate placement surface, which is a region where the insulating plate is placed on the base member, and a substrate placement surface, which is a region where the substrate is placed.
  • the height from the plate mounting surface to the surface of the insulating plate is not more than the height from the plate mounting surface to the upper surface of the substrate. .
  • a step portion is formed between a mask placement surface, which is a region where the electrode mask is placed on the shower plate, and an ejection hole formation surface, which is a region where the ejection holes are formed in the shower plate. ing. In a state where the electrode mask is disposed on the shower plate, the height from the mask mounting surface to the surface of the electrode mask is not more than the height from the mask mounting surface to the ejection hole forming surface.
  • the plasma processing apparatus is configured in this manner, the upper surface of the substrate and the shower plate are formed in the film formation space formed between the upper surface of the substrate and the surface of the shower plate (first shower surface, ejection hole forming surface).
  • the distance from the first shower surface (spout hole forming surface), which is the region where the spout holes are formed, can be minimized. Therefore, the distance between the substrate and the shower plate can be set without being affected by the thickness of the insulating plate and the thickness of the electrode mask, and a narrow gap can be realized.
  • the step portions base step portion and shower step portion
  • an insulating plate and electrode mask having a sufficient thickness can be used, and cracking of the insulating plate and electrode mask can be prevented. .
  • the plasma can be confined between the electrodes (between the shower plate and the substrate).
  • the plasma can be confined between the electrodes even when a narrow gap process is performed.
  • a sufficient gap for exhausting the film forming gas is formed between the insulating plate and the electrode mask. In-plane uniformity can be stabilized, and the film thickness can be made uniform.
  • a plasma processing apparatus includes a chamber in which a process gas is introduced and plasma made of the process gas is generated, a first base surface on which a substrate is placed, A second base surface provided at a peripheral edge portion of the first base surface; and a base step portion provided between the first base surface and the second base surface, and disposed in the chamber.
  • a base member and a height that is equal to or less than a height (distance) from the second base surface to the upper surface of the substrate placed on the first base surface, and is disposed on the second base surface;
  • An insulating plate formed of an insulating material; a process gas supplied to the substrate; a shower plate disposed in the chamber; and a peripheral portion of the shower plate facing the insulating plate.
  • an alternating voltage is applied between the electrodes (between the base member and the shower plate) arranged in the chamber. As a result, plasma composed of process gas is generated between the electrodes.
  • a step portion is formed between a plate placement surface, which is a region where the insulating plate is placed on the base member, and a substrate placement surface, which is a region where the substrate is placed.
  • a plate placement surface which is a region where the insulating plate is placed on the base member
  • a substrate placement surface which is a region where the substrate is placed.
  • the first surface is an area where the upper surface of the substrate and the ejection holes of the shower plate are formed.
  • the distance from 1 shower surface (jet hole formation surface) can be made shorter than before. Therefore, the distance between the substrate and the shower plate can be shortened, and a narrow gap process can be realized.
  • the step portion base step portion
  • an insulating plate having a sufficient thickness can be used, and cracking of the insulating plate can be prevented. Further, by arranging the insulating plate and the electrode mask, the plasma can be confined between the electrodes (between the shower plate and the substrate).
  • the plasma can be confined between the electrodes even when a narrow gap process is performed. Furthermore, even when the distance between the substrate and the shower plate is set as a narrow gap, a sufficient gap for exhausting the film forming gas is formed between the insulating plate and the electrode mask. In-plane uniformity can be stabilized, and the film thickness can be made uniform.
  • a plasma processing apparatus includes a chamber into which a process gas is introduced and plasma composed of the process gas is generated, and the substrate is placed in the chamber.
  • the insulating plate formed of an insulating material, the first shower surface in which the ejection holes are formed, and the peripheral portion of the first shower surface A second shower surface, and a shower step provided between the first shower surface and the second shower surface, and the process gas is supplied toward the substrate and disposed in the chamber.
  • an alternating voltage is applied between the electrodes (between the base member and the shower plate) arranged in the chamber.
  • plasma composed of process gas is generated between the electrodes.
  • the mask placement surface which is a region where the electrode mask is placed on the shower plate
  • the ejection hole formation surface which is a region where the ejection holes are formed in the shower plate.
  • a step portion is formed. In a state where the electrode mask is disposed on the shower plate, the height from the mask mounting surface to the surface of the electrode mask is not more than the height from the mask mounting surface to the ejection hole forming surface.
  • the first surface is an area where the upper surface of the substrate and the ejection holes of the shower plate are formed.
  • the distance from 1 shower surface (jet hole formation surface) can be made shorter than before. Therefore, the distance between the substrate and the shower plate can be shortened, and a narrow gap process can be realized.
  • the step portion shown step portion
  • an electrode mask having a sufficient thickness can be used, so that the electrode mask can be prevented from cracking. Further, by arranging the insulating plate and the electrode mask, the plasma can be confined between the electrodes (between the shower plate and the substrate).
  • the plasma can be confined between the electrodes even when a narrow gap process is performed. Furthermore, even when the distance between the substrate and the shower plate is set as a narrow gap, a sufficient gap for exhausting the film forming gas is formed between the insulating plate and the electrode mask. In-plane uniformity can be stabilized, and the film thickness can be made uniform.
  • the insulating plate is provided on a first contact surface that is in contact with a side surface of the substrate and a back surface opposite to the upper surface of the substrate. It is preferable to include a protrusion having a second abutting surface to be abutted. In this configuration, the insulating plate has a protrusion that protrudes along the second base surface toward the center of the base member.
  • the insulating plate is placed on the base member (second base surface), and the substrate is disposed on the base member (first base surface) and the insulating plate.
  • the side surface of the substrate contacts the first contact surface, and the back surface of the substrate contacts the second contact surface.
  • the substrate and the protruding portion overlap each other when viewed from the vertical direction of the substrate. Therefore, the deposition gas ejected from the shower plate is supplied (injected) toward the substrate or the insulating plate, and the deposition gas can be prevented from coming into contact with the base member. Therefore, it is possible to prevent plasma from being generated between the shower plate and the base member and forming a film on the base member.
  • the first shower surface which is the region where the upper surface of the substrate and the shower hole of the shower plate are formed.
  • the distance to the surface can be minimized. Therefore, the distance between the substrate and the shower plate can be set without being affected by the thickness of the insulating plate and the thickness of the electrode mask, and a narrow gap can be realized.
  • the step portions base step portion and shower step portion
  • an insulating plate and electrode mask having a sufficient thickness can be used, and cracking of the insulating plate and electrode mask can be prevented. .
  • the plasma can be confined between the electrodes (between the shower plate and the substrate). As a result, the plasma can be confined between the electrodes even when a narrow gap process is performed.
  • FIG. 1 is a schematic configuration diagram of a film forming apparatus in the present embodiment.
  • a film forming apparatus 1 that performs a plasma CVD method includes a vacuum chamber 2 (chamber). An opening is formed in the bottom 11 of the vacuum chamber 2. A support column 25 is inserted into the opening, and the support column 25 is disposed in the lower portion of the vacuum chamber 2. A plate-like base member 3 with a built-in heater 16 is connected to the tip of the column 25 (in the vacuum chamber 2). An electrode flange 4 is attached to the upper portion of the vacuum chamber 2 via an insulating flange 31. Further, an exhaust pipe 27 is connected to the vacuum chamber 2. A vacuum pump 28 is provided at the tip of the exhaust pipe 27. The vacuum pump 28 reduces the pressure so that the inside of the vacuum chamber 2 is in a vacuum state.
  • the support column 25 is connected to an elevating mechanism (not shown) provided outside the vacuum chamber 2 and can move up and down in the vertical direction of the substrate 10.
  • the base member 3 connected to the tip of the support column 25 is configured to be able to move up and down.
  • a bellows 26 is provided outside the vacuum chamber 2 so as to cover the outer periphery of the support column 25.
  • the electrode flange 4 is placed on the insulating flange 31 and formed in a plate shape.
  • a conductor 32 is connected to the surface of the electrode flange 4 facing the film formation space.
  • a plate-like shower plate 5 is attached to the tip of the conductor 32.
  • a space 24 is formed between the shower plate 5 and the electrode flange 4.
  • a gas introduction pipe 7 is connected to the electrode flange 4.
  • the gas introduction pipe 7 supplies a source gas (for example, SiH 4 ) toward the space 24 from a film formation gas supply unit 21 provided outside the vacuum chamber 2.
  • the shower plate 5 includes a first shower surface 5a provided with a large number of gas ejection holes 6 and a second portion provided at the peripheral portion of the first shower surface 5a.
  • step-difference part 42 provided between the 1st shower surface 5a and the 2nd shower surface 5b are provided.
  • the gas ejection hole 6 passes through the shower plate 5.
  • the film forming gas introduced into the space 24 is supplied into the vacuum chamber 2 through the gas ejection holes 6.
  • the electrode flange 4 and the shower plate 5 are both made of a conductive material.
  • the electrode flange 4 is connected to an RF power source (high frequency power source) 9 provided outside the vacuum chamber 2.
  • a gas introduction pipe 8 different from the gas introduction pipe 7 is connected to the vacuum chamber 2.
  • the gas introduction pipe 8 is provided with a fluorine gas supply unit 22 and a radical source 23.
  • the radical source 23 decomposes the fluorine gas supplied from the fluorine gas supply unit 22.
  • the gas introduction pipe 8 supplies fluorine radicals obtained by decomposing fluorine gas to the film forming space in the vacuum chamber 2.
  • the base member 3 is a substantially plate-like member having a flat surface. As will be described later with reference to FIG. 2, the base member 3 includes a first base surface 33 on which the substrate 10 is placed, a second base surface 33 a provided at the peripheral edge of the first base surface 33, A base step portion 34 provided between the first base surface 33 and the second base surface 33 a is disposed in the vacuum chamber 2.
  • the base member 3 functions as a ground electrode and is made of, for example, an aluminum alloy.
  • materials other than said material may be employ
  • substrate 10 is arrange
  • the deposition gas is supplied to the deposition space through the gas ejection holes 6 toward the surface of the substrate 10.
  • a heater 16 connected to a power supply line is provided inside the base member 3.
  • the temperature of the base member 3 is adjusted to a predetermined temperature by the heater 16.
  • a power line of the heater 16 protrudes from a substantially central portion of the base member 3 as viewed from the vertical direction of the base member 3 and from the bottom surface 17 of the base member 3, is inserted into the support column 25, and goes to the outside of the vacuum chamber 2. It is led with.
  • the heater 16 is connected to a power source (not shown) outside the vacuum chamber 2 and adjusts the temperature of the base member 3.
  • ground plates 30 connecting the base member 3 and the vacuum chamber 2 are arranged at substantially equal intervals on the bottom 11 of the vacuum chamber 2.
  • the earth plate 30 is made of a flexible metal plate, and is made of, for example, a nickel-based alloy or an aluminum alloy.
  • FIG. 2 is an enlarged cross-sectional view of the portion indicated by the symbol A in FIG.
  • “low position” means that the other position is lower than one position in the direction from the position of the film formation space toward the bottom 11 of the vacuum chamber 2.
  • “high position” means that the other position is higher than the one position in the direction from the position of the film formation space toward the electrode flange 4.
  • a second base surface 33 a formed at a position lower than the first base surface 33 is provided on the peripheral edge portion of the first base surface 33 of the base member 3.
  • a base step portion 34 is formed between the first base surface 33 and the second base surface 33a. The position of the base step portion 34 in the horizontal direction of the first base surface 33 is determined so that the length (diameter) of the first base surface 33 is smaller than the length (diameter) of the substrate 10. That is, when the substrate 10 is placed on the first base surface 33 of the base member 3, the position of the peripheral portion of the substrate 10 in the horizontal direction of the substrate 10 protrudes from the base step portion 34. In other words, the peripheral edge of the substrate 10 is located outside the first base surface 33. That is, the base step portion 34 is formed at a position in contact with the back surface 10 c of the substrate 10.
  • An insulating plate 35 is placed on the second base surface 33 a formed at a position lower than the first base surface 33 via the base step portion 34.
  • the insulating plate 35 is formed in a frame shape along the peripheral edge of the substrate 10.
  • a material of the insulating plate 35 for example, alumina which is an insulator is employed.
  • the thickness (height) of the insulating plate 35 is not more than the height from the second base surface 33 a to the upper surface 10 of the substrate 10 placed on the first base surface 33.
  • the position of the surface 35c of the insulating plate 35 and the position of the upper surface 10a of the substrate 10 coincide with each other in the vertical direction of the substrate 10. Yes.
  • the insulating plate 35 has a size that covers at least the second base surface 33a in the vertical direction of the substrate 10 when the insulating plate 35 is placed on the second base surface 33a.
  • the insulating plate 35 includes a first contact surface 35a that contacts the side surface 10b of the substrate 10 and a second contact surface 35d that contacts the back surface 10c opposite to the upper surface 10a of the substrate 10.
  • the insulating plate 35 has the protruding portion 35b protruding toward the center of the base member 3 along the second base surface 33a.
  • the protruding portion 35 b is located below the back surface 10 c of the substrate 10 and is in contact with the back surface 10 c of the substrate 10.
  • the protruding portion 35 b is substantially in contact with the base step portion 34.
  • the insulating plate 35 is formed so as to protrude from the end of the base member 3 in the horizontal direction, and is provided on the peripheral edge (second base surface 33a) of the base member 3. An end portion of the insulating plate 35 is supported by a support member 36 that supports the base member 3.
  • an insulator 37 made of alumina, for example, is attached to the inner surface of the vacuum chamber 2 facing the support member 36.
  • a second shower surface 5 b formed at a position higher than the first shower surface 5 a is provided at the peripheral edge portion of the first shower surface 5 a of the shower plate 5.
  • a shower step portion 42 is formed between the first shower surface 5a and the second shower surface 5b.
  • An electrode mask 43 formed in a frame shape is placed on the second shower surface 5b formed at a position higher than the first shower surface 5a via the shower step portion 42.
  • alumina which is an insulator is employed as a material of the electrode mask 43.
  • the electrode mask 43 is disposed on the second shower surface 5 b so as to face the insulating plate 35.
  • the thickness (height) of the electrode mask 43 is not more than the height from the second shower surface 5b to the first shower surface 5a.
  • the electrode mask 43 has a size that covers at least the second shower surface 5b in the vertical direction of the shower plate 5 when the electrode mask 43 is placed on the second shower surface 5b.
  • the electrode mask 43 is formed so as to protrude from the end of the shower plate 5 in the horizontal direction.
  • the electrode mask 43 has a size that covers the surface of the support member 44 that supports the shower plate 5 and the surface of the support member 45 provided between the vacuum chamber 2 and the insulating flange 31.
  • the vacuum chamber 2 is decompressed using the vacuum pump 28.
  • the substrate 10 is carried into the vacuum chamber 2 and placed on the base member 3 while the vacuum chamber 2 is maintained in a vacuum.
  • the base member 3 is positioned on the lower side in the vacuum chamber 2. That is, before the substrate 10 is carried in, the distance between the base member 3 and the shower plate 5 is wide, so that the substrate 10 can be easily placed on the base member 3 using a robot arm (not shown). can do.
  • an elevating device (not shown) is activated, the column 25 is pushed upward, and the substrate 10 placed on the base member 3 also moves upward.
  • the interval between the shower plate 5 and the substrate 10 is determined as desired so that the interval necessary for proper film formation is achieved, and this interval is maintained.
  • the position of the surface 35c of the insulating plate 35 coincides with the position of the upper surface 10a of the substrate 10, and the position of the surface 43a of the electrode mask 43 and the position of the first shower surface 5a are the same. I'm doing it.
  • the gap between the substrate 10 and the shower plate 5 can be reduced without the insulating plate 35 and the electrode mask 43 being in contact with each other, and a narrow gap (3 to 10 mm) can be realized.
  • a film forming gas raw material gas
  • the film forming gas is supplied into the vacuum chamber 2 (film forming space) from the gas ejection holes 6.
  • the RF power source 9 is activated and a high frequency voltage is applied to the electrode flange 4. Applied. At this time, a high frequency voltage is applied between the shower plate 5 and the base member 3 to generate a discharge, and plasma is generated between the electrode flange 4 and the surface of the substrate 10. The deposition gas is decomposed in the plasma generated in this way, and a vapor phase growth reaction occurs on the surface of the substrate 10, whereby a thin film is formed on the surface of the substrate 10.
  • the film forming material adheres to the inner wall surface of the vacuum chamber 2 and the like, so that the inside of the vacuum chamber 2 is periodically cleaned.
  • the fluorine gas supplied from the fluorine gas supply unit 22 is decomposed by the radical source 23 to generate fluorine radicals.
  • the fluorine radicals pass through the gas introduction pipe 8 connected to the vacuum chamber 2 and pass through the vacuum chamber 2. To be supplied.
  • a chemical reaction occurs. For example, the first shower surface 5a of the shower plate 5, the surface 43a of the electrode mask 43, or the surface of the insulating plate 35 Deposits adhered to 35c and the like are removed.
  • the base step portion 34 is formed between the second base surface 33a, which is a region where the insulating plate 35 is placed, and the first base surface 33, which is a region where the substrate 10 is placed. Has been. Further, in a state where the substrate 10 and the insulating plate 35 are placed on the base member 3, the position of the surface 35 c of the insulating plate 35 and the position of the upper surface 10 a of the substrate 10 coincide with each other in the vertical direction of the substrate 10.
  • a shower step portion 42 is formed between the second shower surface 5b, which is a region where the electrode mask 43 is placed, and the first shower surface 5a, which is a region where a plurality of ejection holes 6 are formed. Yes.
  • the position of the surface 43 a of the electrode mask 43 and the position of the first shower surface 5 a coincide with each other in the vertical direction of the shower plate 5. Therefore, in the film forming space formed between the upper surface 10a of the substrate 10 and the first shower surface 5a of the shower plate 5, the distance between the upper surface 10a of the substrate 10 and the first shower surface 5a of the shower plate 5 is set as follows. Can be as short as possible. Therefore, the distance between the substrate 10 and the shower plate 5 can be set without being affected by the thickness 35 of the insulating plate and the thickness of the electrode mask 43, and a narrow gap can be realized.
  • the insulating plate 35 and the electrode mask 43 having sufficient thickness can be used. Cracking can be prevented. Further, by disposing the insulating plate 35 and the electrode mask 43, the plasma can be confined between the electrodes (between the shower plate 5 and the substrate 10). As a result, the plasma can be confined between the electrodes even when a narrow gap process is performed. Further, even when the distance between the substrate 10 and the shower plate 5 is set as a narrow gap, a sufficient gap is formed between the insulating plate 35 and the electrode mask 43 for exhausting the film forming gas, The in-plane uniformity of the gas flow can be stabilized and the film thickness can be made uniform. That is, the ⁇ c-Si film can be formed in the plasma processing apparatus configured as described above.
  • the insulating plate 35 extends along the first contact surface 35a that contacts the side surface 10b of the substrate 10, the second contact surface 35d that contacts the back surface 10c of the substrate 10, and the second base surface 33a. And a protruding portion 35b protruding toward the center of the base member 3.
  • the insulating plate 35 having such a configuration is placed on the base member 3 and the substrate 10 is disposed on the first base surface 33, the back surface 10c of the substrate 10 contacts the second contact surface. Further, when viewed from the vertical direction of the substrate 10, the substrate 10 and the protruding portion 35b overlap.
  • the film forming gas supplied from the shower plate 5 comes into contact with the substrate 10 or the insulating plate 35, it is possible to prevent the film forming gas from coming into direct contact with the base member 3. Therefore, it is possible to prevent plasma from being generated between the shower plate 5 and the base member 3 and forming a film on the surface of the base member 3.
  • the electrode mask 43 is formed so as to protrude from the end of the shower plate 5 in the horizontal direction, and the support member 44 that supports the shower plate 5 and the support provided between the vacuum chamber 2 and the insulating flange 31.
  • the surface of the member 45 is covered.
  • the power frequency applied from the RF power source 9 was set to 27.12 MHz, and the RFPower density was set to 1.2 W / cm 2 .
  • the distance between the shower plate 5 and the substrate 10 was set to 7 mm (narrow gap), and the pressure in the film formation space was set to 1400 Pa.
  • the ratio of the flow rate (slm) of SiH 4 and the flow rate of H 2 (slm) as the deposition gas was set to 1:15, and ⁇ c-Si was deposited on the substrate 10.
  • a film formation rate was 2.1 nm / sec, and a ⁇ c-Si film having a film thickness distribution (thickness uniformity) of 11% could be formed.
  • the power frequency applied from the RF power source was set to 27.12 MHz, and the RFPower density was set to 1.2 W / cm 2 . Further, the distance between the shower plate 5 and the substrate 10 was set to 11 mm, and the pressure in the film formation space was set to 700 Pa. Then, the ratio of the flow rate (slm) of SiH 4 and the flow rate of H 2 (slm) as the deposition gas was set to 1:15, and ⁇ c-Si was deposited on the substrate 10.
  • a film formation rate was 1.1 nm / sec, and a film of ⁇ c-Si having a film thickness distribution (film thickness uniformity) of 23% was formed.
  • the position of the surface 35c of the insulating plate 35 and the position of the upper surface 10a of the substrate 10 coincide in the vertical direction of the substrate 10, and the position of the surface 43a of the electrode mask 43 and the first shower.
  • the film forming speed can be increased, the film thickness distribution (film thickness uniformity) is excellent, and the quality is high.
  • An appropriate ⁇ c-Si film can be formed.
  • the configuration in which the position of the surface 35c of the insulating plate 35 and the position of the upper surface 10a of the substrate 10 coincide in the vertical direction of the substrate 10 has been described.
  • a configuration in which the position of the surface 35c of the insulating plate 35 is low may be employed. That is, the thickness (height) of the insulating plate 35 is equal to or less than the height from the second base surface 33 a to the upper surface 10 of the substrate 10 placed on the first base surface 33.
  • the configuration in which the position of the surface 43a of the electrode mask 43 and the position of the first shower surface 5a coincide in the vertical direction of the shower plate 5 has been described.
  • a configuration in which the position of the surface 43a of the electrode mask 43 is higher than the position may be employed. That is, the thickness (height) of the electrode mask 43 is not more than the height from the second shower surface 5b to the first shower surface 5a.
  • the first configuration in which the position of the surface 35c of the insulating plate 35 and the position of the upper surface 10a of the substrate 10 coincide with each other in the vertical direction of the substrate 10, and the position of the surface 43a of the electrode mask 43.
  • the plasma processing apparatus was described in which the second configuration in which the position of the first shower surface 5a coincides in the vertical direction of the shower plate 5 has been described, the present invention is not limited to this configuration.
  • a plasma processing apparatus in which one of the first configuration and the second configuration is combined with the conventional configuration may be employed. That is, if the distance between the substrate 10 and the shower plate 5 is set so as to realize a narrow gap (10 mm or less), the above-described effects can be obtained. In addition, the above-described effects can be obtained if a sufficient gap is formed between the insulating plate 35 and the electrode mask 43 to smoothly exhaust the film forming gas.
  • the boundary between the surface 35c of the insulating plate 35 and the upper surface 10a of the substrate 10, and the boundary between the surface 43a of the electrode mask 43 and the first shower surface 5a of the shower plate 5 Although the side surface is formed so as to intersect at a substantially right angle, a curved surface may be formed between the upper surface and the side surface at the boundary. By forming a curved surface at the boundary portion in this way, it is possible to suppress the occurrence of abnormal discharge.
  • the present invention is useful for a plasma processing apparatus capable of confining plasma between electrodes even when a narrow gap process is performed.
  • SYMBOLS 1 Film-forming apparatus (plasma processing apparatus) 2 ... Vacuum chamber (chamber) 3 ... Base member 5 ... shower plate 5a ... 1st shower surface 5b ... 2nd shower surface 6 ... Gas ejection hole 10 ... Substrate 10a ... Upper surface 10b ... Side surface 10c ... Back surface 33 ... First base surface 33a ... Second base surface 34 ... Base step portion 35 ... Insulating plate 35a ... First contact surface 35b ... Projection portion 35c ... Surface 35d ... Second contact surface 42 ... shower step Part 43 ... Electrode mask 43a ... Surface.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention porte sur un appareil de traitement par plasma comprenant : un élément de base (3) ayant une première surface de base (33), une seconde surface de base (33a) et une partie d'échelon de base (34) ; une plaque isolante (35) qui est constituée d'un matériau isolant et est agencée sur la seconde surface de base (33a), tout en ayant une hauteur égale ou inférieure à la hauteur allant de la seconde surface de base (33a) à la surface supérieure (10a) d'un substrat (10) qui est agencé sur la première surface de base (33) ; une plaque d'arrosage (5) ayant une première surface d'arrosage (5a), une seconde surface d'arrosage (5b) et une partie d'échelon d'arrosage (42) ; et un masque d'électrode (43) qui est constitué d'un matériau isolant et est agencé sur la seconde surface d'arrosage (5b) de façon à faire face à la plaque isolante (35), tout en ayant une hauteur égale ou inférieure à la hauteur allant de la seconde surface d'arrosage (5b) à la première surface d'arrosage (5a).
PCT/JP2010/000057 2009-01-09 2010-01-06 Appareil de traitement par plasma WO2010079753A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2010800040969A CN102272894A (zh) 2009-01-09 2010-01-06 等离子体处理装置
KR1020117015198A KR101290738B1 (ko) 2009-01-09 2010-01-06 플라즈마 처리 장치
JP2010545748A JP5394403B2 (ja) 2009-01-09 2010-01-06 プラズマ処理装置
DE112010000717.9T DE112010000717B4 (de) 2009-01-09 2010-01-06 Plasmaverarbeitungsvorrichtung

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JP2009-004022 2009-01-09
JP2009004022 2009-01-09

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WO2010079753A1 true WO2010079753A1 (fr) 2010-07-15

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KR (1) KR101290738B1 (fr)
CN (1) CN102272894A (fr)
DE (1) DE112010000717B4 (fr)
TW (1) TW201110828A (fr)
WO (1) WO2010079753A1 (fr)

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Publication number Priority date Publication date Assignee Title
CN103031514A (zh) * 2011-09-30 2013-04-10 北京北方微电子基地设备工艺研究中心有限责任公司 遮蔽装置、具有其的pvd设备及pvd设备的控制方法
CN112563158A (zh) * 2019-09-26 2021-03-26 株式会社爱发科 真空处理装置
KR20230143951A (ko) 2022-04-06 2023-10-13 가부시키가이샤 아루박 플라즈마 처리 장치
US11901162B2 (en) 2019-01-07 2024-02-13 Ulvac, Inc. Vacuum processing apparatus and method of cleaning vacuum processing apparatus

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JPH08260158A (ja) * 1995-01-27 1996-10-08 Kokusai Electric Co Ltd 基板処理装置
JPH0955374A (ja) * 1995-06-08 1997-02-25 Tokyo Electron Ltd プラズマ処理装置
JPH09205132A (ja) * 1996-01-25 1997-08-05 Sumitomo Metal Ind Ltd クランプ板

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WO2003019618A2 (fr) * 2001-08-27 2003-03-06 Matsushita Electric Industrial Co., Ltd. Appareil de traitement au plasma et procede de traitement au plasma
CN100418187C (zh) * 2003-02-07 2008-09-10 东京毅力科创株式会社 等离子体处理装置、环形部件和等离子体处理方法
JP4972327B2 (ja) * 2006-03-22 2012-07-11 東京エレクトロン株式会社 プラズマ処理装置
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JPH08227859A (ja) * 1994-11-30 1996-09-03 Applied Materials Inc Ｃｖｄ処理チャンバ
JPH08260158A (ja) * 1995-01-27 1996-10-08 Kokusai Electric Co Ltd 基板処理装置
JPH0955374A (ja) * 1995-06-08 1997-02-25 Tokyo Electron Ltd プラズマ処理装置
JPH09205132A (ja) * 1996-01-25 1997-08-05 Sumitomo Metal Ind Ltd クランプ板

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103031514A (zh) * 2011-09-30 2013-04-10 北京北方微电子基地设备工艺研究中心有限责任公司 遮蔽装置、具有其的pvd设备及pvd设备的控制方法
US11901162B2 (en) 2019-01-07 2024-02-13 Ulvac, Inc. Vacuum processing apparatus and method of cleaning vacuum processing apparatus
CN112563158A (zh) * 2019-09-26 2021-03-26 株式会社爱发科 真空处理装置
KR20210036807A (ko) 2019-09-26 2021-04-05 가부시키가이샤 아루박 진공 처리 장치
CN112563158B (zh) * 2019-09-26 2024-04-19 株式会社爱发科 真空处理装置
KR20230143951A (ko) 2022-04-06 2023-10-13 가부시키가이샤 아루박 플라즈마 처리 장치

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DE112010000717B4 (de) 2014-02-20
KR101290738B1 (ko) 2013-07-29
JPWO2010079753A1 (ja) 2012-06-21
DE112010000717T5 (de) 2012-07-05
DE112010000717T8 (de) 2013-04-18
KR20110089453A (ko) 2011-08-08
JP5394403B2 (ja) 2014-01-22
CN102272894A (zh) 2011-12-07
TW201110828A (en) 2011-03-16

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