JP5394403B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- JP5394403B2 JP5394403B2 JP2010545748A JP2010545748A JP5394403B2 JP 5394403 B2 JP5394403 B2 JP 5394403B2 JP 2010545748 A JP2010545748 A JP 2010545748A JP 2010545748 A JP2010545748 A JP 2010545748A JP 5394403 B2 JP5394403 B2 JP 5394403B2
- Authority
- JP
- Japan
- Prior art keywords
- shower
- substrate
- base
- plate
- insulating plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims description 142
- 238000000034 method Methods 0.000 claims description 38
- 230000008569 process Effects 0.000 claims description 37
- 230000002093 peripheral effect Effects 0.000 claims description 26
- 239000011810 insulating material Substances 0.000 claims description 15
- 238000009413 insulation Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 description 60
- 230000015572 biosynthetic process Effects 0.000 description 22
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 12
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 229910052731 fluorine Inorganic materials 0.000 description 10
- 239000011737 fluorine Substances 0.000 description 10
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- 238000005336 cracking Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010545748A JP5394403B2 (ja) | 2009-01-09 | 2010-01-06 | プラズマ処理装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009004022 | 2009-01-09 | ||
JP2009004022 | 2009-01-09 | ||
JP2010545748A JP5394403B2 (ja) | 2009-01-09 | 2010-01-06 | プラズマ処理装置 |
PCT/JP2010/000057 WO2010079753A1 (fr) | 2009-01-09 | 2010-01-06 | Appareil de traitement par plasma |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2010079753A1 JPWO2010079753A1 (ja) | 2012-06-21 |
JP5394403B2 true JP5394403B2 (ja) | 2014-01-22 |
Family
ID=42316519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010545748A Active JP5394403B2 (ja) | 2009-01-09 | 2010-01-06 | プラズマ処理装置 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP5394403B2 (fr) |
KR (1) | KR101290738B1 (fr) |
CN (1) | CN102272894A (fr) |
DE (1) | DE112010000717B4 (fr) |
TW (1) | TW201110828A (fr) |
WO (1) | WO2010079753A1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103031514B (zh) * | 2011-09-30 | 2015-09-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 遮蔽装置、具有其的pvd设备及pvd设备的控制方法 |
KR102503465B1 (ko) | 2019-01-07 | 2023-02-24 | 가부시키가이샤 아루박 | 진공 처리 장치, 진공 처리 장치의 클리닝 방법 |
JP7282646B2 (ja) * | 2019-09-26 | 2023-05-29 | 株式会社アルバック | 真空処理装置 |
JP2023154254A (ja) | 2022-04-06 | 2023-10-19 | 株式会社アルバック | プラズマ処理装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08227859A (ja) * | 1994-11-30 | 1996-09-03 | Applied Materials Inc | Cvd処理チャンバ |
JPH08260158A (ja) * | 1995-01-27 | 1996-10-08 | Kokusai Electric Co Ltd | 基板処理装置 |
JPH0955374A (ja) * | 1995-06-08 | 1997-02-25 | Tokyo Electron Ltd | プラズマ処理装置 |
JPH09205132A (ja) * | 1996-01-25 | 1997-08-05 | Sumitomo Metal Ind Ltd | クランプ板 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW323387B (fr) * | 1995-06-07 | 1997-12-21 | Tokyo Electron Co Ltd | |
JP3002448B1 (ja) * | 1998-07-31 | 2000-01-24 | 国際電気株式会社 | 基板処理装置 |
KR100890790B1 (ko) * | 2001-08-27 | 2009-03-31 | 파나소닉 주식회사 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
CN100418187C (zh) * | 2003-02-07 | 2008-09-10 | 东京毅力科创株式会社 | 等离子体处理装置、环形部件和等离子体处理方法 |
JP4972327B2 (ja) * | 2006-03-22 | 2012-07-11 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP4116066B1 (ja) | 2007-06-21 | 2008-07-09 | 七山 美智賜 | 磁気データ消去装置 |
-
2010
- 2010-01-06 TW TW099100190A patent/TW201110828A/zh unknown
- 2010-01-06 KR KR1020117015198A patent/KR101290738B1/ko active IP Right Grant
- 2010-01-06 JP JP2010545748A patent/JP5394403B2/ja active Active
- 2010-01-06 DE DE112010000717.9T patent/DE112010000717B4/de not_active Expired - Fee Related
- 2010-01-06 CN CN2010800040969A patent/CN102272894A/zh active Pending
- 2010-01-06 WO PCT/JP2010/000057 patent/WO2010079753A1/fr active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08227859A (ja) * | 1994-11-30 | 1996-09-03 | Applied Materials Inc | Cvd処理チャンバ |
JPH08260158A (ja) * | 1995-01-27 | 1996-10-08 | Kokusai Electric Co Ltd | 基板処理装置 |
JPH0955374A (ja) * | 1995-06-08 | 1997-02-25 | Tokyo Electron Ltd | プラズマ処理装置 |
JPH09205132A (ja) * | 1996-01-25 | 1997-08-05 | Sumitomo Metal Ind Ltd | クランプ板 |
Also Published As
Publication number | Publication date |
---|---|
KR101290738B1 (ko) | 2013-07-29 |
WO2010079753A1 (fr) | 2010-07-15 |
DE112010000717T8 (de) | 2013-04-18 |
CN102272894A (zh) | 2011-12-07 |
JPWO2010079753A1 (ja) | 2012-06-21 |
KR20110089453A (ko) | 2011-08-08 |
DE112010000717T5 (de) | 2012-07-05 |
DE112010000717B4 (de) | 2014-02-20 |
TW201110828A (en) | 2011-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110391122B (zh) | 基底加工装置以及基底加工方法 | |
JP6679591B2 (ja) | プロセス均一性を高めるための方法およびシステム | |
KR101563727B1 (ko) | 플라즈마 cvd 반응기의 샤워 플레이트 전극 | |
JPWO2010079756A1 (ja) | プラズマ処理装置 | |
JP5328814B2 (ja) | プラズマ処理装置及びプラズマcvd成膜方法 | |
US8906471B2 (en) | Method of depositing metallic film by plasma CVD and storage medium | |
JP6050860B1 (ja) | プラズマ原子層成長装置 | |
KR100244955B1 (ko) | 열 cvd 장치의 클리닝용 전극유니트 | |
JP5394403B2 (ja) | プラズマ処理装置 | |
JP5378416B2 (ja) | プラズマ処理装置 | |
JP5022077B2 (ja) | 成膜装置 | |
JP2010161316A (ja) | プラズマ処理装置 | |
JP4933979B2 (ja) | 成膜装置のクリーニング方法 | |
JP2000223429A (ja) | 成膜装置、成膜方法及びクリ―ニング方法 | |
JP2006331740A (ja) | プラズマプロセス装置 | |
JP2002064064A (ja) | プラズマ処理装置 | |
WO2010079740A1 (fr) | Appareil de traitement au plasma | |
JP2001140077A (ja) | 半導体製造装置 | |
JPH11307521A (ja) | プラズマcvd装置及びその使用方法 | |
KR102298836B1 (ko) | 플라즈마 화학기상 증착장비용 상부전극 | |
US20220262601A1 (en) | Etching method and plasma processing apparatus | |
US20230268190A1 (en) | Plasma processing method and plasma processing system | |
JP2005310834A (ja) | プラズマプロセス装置 | |
JP5302835B2 (ja) | プラズマ処理装置 | |
JP2007291442A (ja) | 成膜装置および成膜方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130709 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130826 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130917 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131016 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5394403 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |