DE112010000717T8 - Plasmaverarbeitungsvorrichtung - Google Patents

Plasmaverarbeitungsvorrichtung Download PDF

Info

Publication number
DE112010000717T8
DE112010000717T8 DE112010000717T DE112010000717T DE112010000717T8 DE 112010000717 T8 DE112010000717 T8 DE 112010000717T8 DE 112010000717 T DE112010000717 T DE 112010000717T DE 112010000717 T DE112010000717 T DE 112010000717T DE 112010000717 T8 DE112010000717 T8 DE 112010000717T8
Authority
DE
Germany
Prior art keywords
processing apparatus
plasma processing
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE112010000717T
Other languages
English (en)
Other versions
DE112010000717T5 (de
DE112010000717B4 (de
Inventor
Sadatsugu Wakamatsu
Koji KAMESAKI
Masashi Kikuchi
Yosuke Jimbo
Kenji Eto
Shin Asari
Hiroto Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of DE112010000717T5 publication Critical patent/DE112010000717T5/de
Publication of DE112010000717T8 publication Critical patent/DE112010000717T8/de
Application granted granted Critical
Publication of DE112010000717B4 publication Critical patent/DE112010000717B4/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE112010000717.9T 2009-01-09 2010-01-06 Plasmaverarbeitungsvorrichtung Expired - Fee Related DE112010000717B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009004022 2009-01-09
JP2009-004022 2009-01-09
PCT/JP2010/000057 WO2010079753A1 (ja) 2009-01-09 2010-01-06 プラズマ処理装置

Publications (3)

Publication Number Publication Date
DE112010000717T5 DE112010000717T5 (de) 2012-07-05
DE112010000717T8 true DE112010000717T8 (de) 2013-04-18
DE112010000717B4 DE112010000717B4 (de) 2014-02-20

Family

ID=42316519

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112010000717.9T Expired - Fee Related DE112010000717B4 (de) 2009-01-09 2010-01-06 Plasmaverarbeitungsvorrichtung

Country Status (6)

Country Link
JP (1) JP5394403B2 (de)
KR (1) KR101290738B1 (de)
CN (1) CN102272894A (de)
DE (1) DE112010000717B4 (de)
TW (1) TW201110828A (de)
WO (1) WO2010079753A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103031514B (zh) * 2011-09-30 2015-09-02 北京北方微电子基地设备工艺研究中心有限责任公司 遮蔽装置、具有其的pvd设备及pvd设备的控制方法
KR102503465B1 (ko) 2019-01-07 2023-02-24 가부시키가이샤 아루박 진공 처리 장치, 진공 처리 장치의 클리닝 방법
JP7282646B2 (ja) * 2019-09-26 2023-05-29 株式会社アルバック 真空処理装置
JP2023154254A (ja) 2022-04-06 2023-10-19 株式会社アルバック プラズマ処理装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
JPH08260158A (ja) * 1995-01-27 1996-10-08 Kokusai Electric Co Ltd 基板処理装置
TW323387B (de) * 1995-06-07 1997-12-21 Tokyo Electron Co Ltd
JP3192370B2 (ja) * 1995-06-08 2001-07-23 東京エレクトロン株式会社 プラズマ処理装置
JP3541286B2 (ja) * 1996-01-25 2004-07-07 東京エレクトロン株式会社 クランプ板及びエッチング装置
JP3002448B1 (ja) * 1998-07-31 2000-01-24 国際電気株式会社 基板処理装置
KR100890790B1 (ko) * 2001-08-27 2009-03-31 파나소닉 주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법
CN100418187C (zh) * 2003-02-07 2008-09-10 东京毅力科创株式会社 等离子体处理装置、环形部件和等离子体处理方法
JP4972327B2 (ja) * 2006-03-22 2012-07-11 東京エレクトロン株式会社 プラズマ処理装置
JP4116066B1 (ja) 2007-06-21 2008-07-09 七山 美智賜 磁気データ消去装置

Also Published As

Publication number Publication date
KR101290738B1 (ko) 2013-07-29
WO2010079753A1 (ja) 2010-07-15
CN102272894A (zh) 2011-12-07
JP5394403B2 (ja) 2014-01-22
JPWO2010079753A1 (ja) 2012-06-21
KR20110089453A (ko) 2011-08-08
DE112010000717T5 (de) 2012-07-05
DE112010000717B4 (de) 2014-02-20
TW201110828A (en) 2011-03-16

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Legal Events

Date Code Title Description
R012 Request for examination validly filed
R082 Change of representative

Representative=s name: EISENFUEHR SPEISER PATENTANWAELTE RECHTSANWAEL, DE

Representative=s name: EISENFUEHR, SPEISER & PARTNER, DE

R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20140801