CN102272894A - 等离子体处理装置 - Google Patents
等离子体处理装置 Download PDFInfo
- Publication number
- CN102272894A CN102272894A CN2010800040969A CN201080004096A CN102272894A CN 102272894 A CN102272894 A CN 102272894A CN 2010800040969 A CN2010800040969 A CN 2010800040969A CN 201080004096 A CN201080004096 A CN 201080004096A CN 102272894 A CN102272894 A CN 102272894A
- Authority
- CN
- China
- Prior art keywords
- substrate
- shower
- insulation board
- basal surface
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 205
- 238000009413 insulation Methods 0.000 claims description 76
- 238000000034 method Methods 0.000 claims description 18
- 238000005516 engineering process Methods 0.000 claims description 17
- 239000011810 insulating material Substances 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 description 31
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- 238000007599 discharging Methods 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- 238000010276 construction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- -1 fluoro free radical Chemical class 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 150000003254 radicals Chemical class 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000803 paradoxical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009004022 | 2009-01-09 | ||
JP2009-004022 | 2009-01-09 | ||
PCT/JP2010/000057 WO2010079753A1 (ja) | 2009-01-09 | 2010-01-06 | プラズマ処理装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN102272894A true CN102272894A (zh) | 2011-12-07 |
Family
ID=42316519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010800040969A Pending CN102272894A (zh) | 2009-01-09 | 2010-01-06 | 等离子体处理装置 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP5394403B2 (de) |
KR (1) | KR101290738B1 (de) |
CN (1) | CN102272894A (de) |
DE (1) | DE112010000717B4 (de) |
TW (1) | TW201110828A (de) |
WO (1) | WO2010079753A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112563158A (zh) * | 2019-09-26 | 2021-03-26 | 株式会社爱发科 | 真空处理装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103031514B (zh) * | 2011-09-30 | 2015-09-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 遮蔽装置、具有其的pvd设备及pvd设备的控制方法 |
US11901162B2 (en) | 2019-01-07 | 2024-02-13 | Ulvac, Inc. | Vacuum processing apparatus and method of cleaning vacuum processing apparatus |
JP7510457B2 (ja) | 2022-04-06 | 2024-07-03 | 株式会社アルバック | プラズマ処理装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08227859A (ja) * | 1994-11-30 | 1996-09-03 | Applied Materials Inc | Cvd処理チャンバ |
JPH08260158A (ja) * | 1995-01-27 | 1996-10-08 | Kokusai Electric Co Ltd | 基板処理装置 |
JPH0955374A (ja) * | 1995-06-08 | 1997-02-25 | Tokyo Electron Ltd | プラズマ処理装置 |
JPH09205132A (ja) * | 1996-01-25 | 1997-08-05 | Sumitomo Metal Ind Ltd | クランプ板 |
CN1516890A (zh) * | 2001-08-27 | 2004-07-28 | ���µ�����ҵ��ʽ���� | 等离子体处理装置及等离子体处理方法 |
CN1521805A (zh) * | 2003-02-07 | 2004-08-18 | ���������ƴ���ʽ���� | 等离子体处理装置、环形部件和等离子体处理方法 |
CN101042989A (zh) * | 2006-03-22 | 2007-09-26 | 东京毅力科创株式会社 | 等离子体处理装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW434745B (en) * | 1995-06-07 | 2001-05-16 | Tokyo Electron Ltd | Plasma processing apparatus |
JP3002448B1 (ja) * | 1998-07-31 | 2000-01-24 | 国際電気株式会社 | 基板処理装置 |
JP4116066B1 (ja) | 2007-06-21 | 2008-07-09 | 七山 美智賜 | 磁気データ消去装置 |
-
2010
- 2010-01-06 JP JP2010545748A patent/JP5394403B2/ja active Active
- 2010-01-06 WO PCT/JP2010/000057 patent/WO2010079753A1/ja active Application Filing
- 2010-01-06 DE DE112010000717.9T patent/DE112010000717B4/de not_active Expired - Fee Related
- 2010-01-06 TW TW099100190A patent/TW201110828A/zh unknown
- 2010-01-06 CN CN2010800040969A patent/CN102272894A/zh active Pending
- 2010-01-06 KR KR1020117015198A patent/KR101290738B1/ko active IP Right Grant
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08227859A (ja) * | 1994-11-30 | 1996-09-03 | Applied Materials Inc | Cvd処理チャンバ |
JPH08260158A (ja) * | 1995-01-27 | 1996-10-08 | Kokusai Electric Co Ltd | 基板処理装置 |
JPH0955374A (ja) * | 1995-06-08 | 1997-02-25 | Tokyo Electron Ltd | プラズマ処理装置 |
JPH09205132A (ja) * | 1996-01-25 | 1997-08-05 | Sumitomo Metal Ind Ltd | クランプ板 |
CN1516890A (zh) * | 2001-08-27 | 2004-07-28 | ���µ�����ҵ��ʽ���� | 等离子体处理装置及等离子体处理方法 |
CN1521805A (zh) * | 2003-02-07 | 2004-08-18 | ���������ƴ���ʽ���� | 等离子体处理装置、环形部件和等离子体处理方法 |
CN101042989A (zh) * | 2006-03-22 | 2007-09-26 | 东京毅力科创株式会社 | 等离子体处理装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112563158A (zh) * | 2019-09-26 | 2021-03-26 | 株式会社爱发科 | 真空处理装置 |
CN112563158B (zh) * | 2019-09-26 | 2024-04-19 | 株式会社爱发科 | 真空处理装置 |
Also Published As
Publication number | Publication date |
---|---|
DE112010000717T5 (de) | 2012-07-05 |
JPWO2010079753A1 (ja) | 2012-06-21 |
TW201110828A (en) | 2011-03-16 |
DE112010000717T8 (de) | 2013-04-18 |
WO2010079753A1 (ja) | 2010-07-15 |
JP5394403B2 (ja) | 2014-01-22 |
KR20110089453A (ko) | 2011-08-08 |
KR101290738B1 (ko) | 2013-07-29 |
DE112010000717B4 (de) | 2014-02-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20111207 |