JP2019516864A - 非シャドウフレーム式プラズマ処理チャンバ - Google Patents
非シャドウフレーム式プラズマ処理チャンバ Download PDFInfo
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- JP2019516864A JP2019516864A JP2018560461A JP2018560461A JP2019516864A JP 2019516864 A JP2019516864 A JP 2019516864A JP 2018560461 A JP2018560461 A JP 2018560461A JP 2018560461 A JP2018560461 A JP 2018560461A JP 2019516864 A JP2019516864 A JP 2019516864A
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- 239000000758 substrate Substances 0.000 claims abstract description 100
- 239000000919 ceramic Substances 0.000 claims abstract description 74
- 238000000034 method Methods 0.000 claims description 15
- 238000011066 ex-situ storage Methods 0.000 claims description 11
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- 230000015556 catabolic process Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000007921 spray Substances 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 15
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 3
- 239000011324 bead Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
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- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
Description
したがって、基板支持アセンブリを改善する必要がある。
のところに配置される。セラミック層の内側エッジ208は、w方向において
のところに配置される。
のところに配置される。セラミック層の内側エッジ208は、w方向において支持プレート120の中心から
のところに配置される。
のところに配置される。セラミック層200の内側エッジ208は、w方向において支持プレート120の中心から
のところに配置される。
Claims (15)
- 基板支持アセンブリであって、
大面積基板を支持するように構成された基板受容エリアを含み且つ前記基板受容エリアの外側に位置する外側エリアを含む上面を有する支持プレートと、
前記支持プレートの前記上面の前記外側エリアに堆積された、現場外で堆積されたセラミック層と
を備える、基板支持アセンブリ。 - 前記セラミック層は前記基板受容エリアのエリア全体に堆積される、請求項1に記載の基板支持アセンブリ。
- 前記セラミック層は、少なくとも前記基板受容エリアの長さの半分から5mmを引いたものと等しい距離に位置づけされた内側エッジを有する、請求項1に記載の基板支持アセンブリ。
- 前記セラミック層は、セラミック層が500〜2000Vの破壊電圧を有するような厚さを有する、請求項1に記載の基板支持アセンブリ。
- 前記セラミック層が前記支持プレートの一側面を覆っている、請求項1に記載の基板支持アセンブリ。
- 前記支持プレートの表面は陽極酸化され、前記セラミック層は陽極酸化された前記上面の粗面化された部分を覆っている、請求項1に記載の基板支持アセンブリ。
- 前記セラミック層はアーク溶射で堆積されている、請求項1に記載の基板支持アセンブリ。
- 処理チャンバであって、
チャンバ本体において処理領域を画定する上壁と、側壁と、底壁とを含むチャンバ本体と、
前記処理領域内に配置された基板支持アセンブリであって、
大面積基板を支持するように構成された基板受容エリアを含み且つ前記基板受容エリアの外側に位置する外側エリアを含む上面を有する支持プレートと、
前記支持プレートの前記上面の前記外側エリアに堆積された、現場外で堆積されたセラミック層と
を備える基板支持アセンブリと
を備える処理チャンバ。 - 前記セラミック層が前記基板受容エリアのエリア全体に堆積される、請求項8に記載の処理チャンバ。
- 前記セラミック層は、セラミック層が500〜2000Vの破壊電圧を有するような厚さを有する、請求項8に記載の処理チャンバ。
- 前記セラミック層が前記支持プレートの一側面を覆っている、請求項8に記載の処理チャンバ。
- 前記セラミック層は、少なくとも前記基板受容エリアの長さの半分から5mmを引いたものと等しい距離に位置づけされた内側エッジを有する、請求項8に記載の処理チャンバ。
- 前記支持プレートの表面は陽極酸化され、前記セラミック層は陽極酸化された前記上面の粗面化された部分を覆っている、請求項8に記載の処理チャンバ。
- 前記セラミック層はアーク溶射で堆積されている、請求項8に記載の処理チャンバ。
- 基板を処理する方法であって、
基板受容エリアと、前記基板受容エリアの外側であり且つ現場外で堆積されたセラミックを有する外側エリアとを有する支持プレートに前記基板を位置づけすることと、
前記基板に材料の層を堆積させるために、プラズマ強化化学気相堆積処理を実施することと
を含む方法。
Applications Claiming Priority (3)
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US15/157,076 US20170335459A1 (en) | 2016-05-17 | 2016-05-17 | Non-shadow frame plasma processing chamber |
US15/157,076 | 2016-05-17 | ||
PCT/US2017/030212 WO2017200733A1 (en) | 2016-05-17 | 2017-04-28 | Non-shadow frame plasma processing chamber |
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JP2019516864A true JP2019516864A (ja) | 2019-06-20 |
JP6727338B2 JP6727338B2 (ja) | 2020-07-22 |
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US (1) | US20170335459A1 (ja) |
JP (1) | JP6727338B2 (ja) |
KR (1) | KR20180131631A (ja) |
CN (1) | CN109072435A (ja) |
TW (1) | TWI695902B (ja) |
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US11251019B2 (en) | 2016-12-15 | 2022-02-15 | Toyota Jidosha Kabushiki Kaisha | Plasma device |
JP6863199B2 (ja) * | 2017-09-25 | 2021-04-21 | トヨタ自動車株式会社 | プラズマ処理装置 |
JP6770988B2 (ja) * | 2018-03-14 | 2020-10-21 | 株式会社Kokusai Electric | 基板処理装置および半導体装置の製造方法 |
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US6033483A (en) * | 1994-06-30 | 2000-03-07 | Applied Materials, Inc. | Electrically insulating sealing structure and its method of use in a high vacuum physical vapor deposition apparatus |
TW434745B (en) * | 1995-06-07 | 2001-05-16 | Tokyo Electron Ltd | Plasma processing apparatus |
US6120640A (en) * | 1996-12-19 | 2000-09-19 | Applied Materials, Inc. | Boron carbide parts and coatings in a plasma reactor |
US6106630A (en) * | 1997-08-07 | 2000-08-22 | Applied Materials, Inc. | Ceramic-coated heating assembly for high temperature processing chamber |
US8372205B2 (en) * | 2003-05-09 | 2013-02-12 | Applied Materials, Inc. | Reducing electrostatic charge by roughening the susceptor |
US7732056B2 (en) * | 2005-01-18 | 2010-06-08 | Applied Materials, Inc. | Corrosion-resistant aluminum component having multi-layer coating |
US7525787B2 (en) * | 2005-09-30 | 2009-04-28 | Lam Research Corporation | Electrostatic chuck assembly with dielectric material and/or cavity having varying thickness, profile and/or shape, method of use and apparatus incorporating same |
US10242888B2 (en) * | 2007-04-27 | 2019-03-26 | Applied Materials, Inc. | Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance |
TW201334213A (zh) * | 2011-11-01 | 2013-08-16 | Intevac Inc | 處理太陽能電池晶圓的靜電吸盤 |
JP5633766B2 (ja) * | 2013-03-29 | 2014-12-03 | Toto株式会社 | 静電チャック |
KR101385950B1 (ko) * | 2013-09-16 | 2014-04-16 | 주식회사 펨빅스 | 정전척 및 정전척 제조 방법 |
US10266943B2 (en) * | 2014-06-27 | 2019-04-23 | Applied Materials, Inc. | Plasma corrosion resistive heater for high temperature processing |
-
2016
- 2016-05-17 US US15/157,076 patent/US20170335459A1/en not_active Abandoned
-
2017
- 2017-04-28 WO PCT/US2017/030212 patent/WO2017200733A1/en active Application Filing
- 2017-04-28 CN CN201780026121.5A patent/CN109072435A/zh active Pending
- 2017-04-28 JP JP2018560461A patent/JP6727338B2/ja active Active
- 2017-04-28 KR KR1020187034253A patent/KR20180131631A/ko not_active Application Discontinuation
- 2017-05-04 TW TW106114752A patent/TWI695902B/zh not_active IP Right Cessation
Also Published As
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CN109072435A (zh) | 2018-12-21 |
US20170335459A1 (en) | 2017-11-23 |
WO2017200733A1 (en) | 2017-11-23 |
KR20180131631A (ko) | 2018-12-10 |
TWI695902B (zh) | 2020-06-11 |
JP6727338B2 (ja) | 2020-07-22 |
TW201805466A (zh) | 2018-02-16 |
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