TW201805466A - 基板支撐組件、具有其之處理腔室以及處理基板的方法 - Google Patents

基板支撐組件、具有其之處理腔室以及處理基板的方法 Download PDF

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TW201805466A
TW201805466A TW106114752A TW106114752A TW201805466A TW 201805466 A TW201805466 A TW 201805466A TW 106114752 A TW106114752 A TW 106114752A TW 106114752 A TW106114752 A TW 106114752A TW 201805466 A TW201805466 A TW 201805466A
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substrate
ceramic layer
support plate
top surface
processing chamber
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崔永鎮
朴範洙
東碩 李
威廉羅門 史德林
羅賓 廷訥
栗田真一
蘇海 安華
壽永 崔
崔羿
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應用材料股份有限公司
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Abstract

本發明所述的實施例通常有關於一種基板支撐組件。基板支撐組件包括一支撐板與一陶瓷層。支撐板具有一頂表面。頂表面包括用以支撐一大面積基板的一基板接收區與位於基板接收區外側的一外部區

Description

無陰影框架電漿處理室
本發明一般係關於一種支撐板組件。
平板顯示器(Flat panel display)一般用於諸如電腦和電視顯示器的主動矩陣式顯示器(active matrix display)、個人數位助理(PDA)、手機、以及太陽能電池等。可以在製造平板顯示器中使用電漿增強化學氣相沉積(PECVD)以在一基板上沉積薄膜。電漿增強型化學氣相沉積一般係透過將前驅物氣體(precursor gas)引入真空處理室內的電漿(plama)中，並由被激發的前驅物氣體沉積一薄膜在基板上。
傳統的電漿增強化學氣相沉積系統在處理期間會使用一陰影框架(shadow frame)以支撐基板。陰影框架傾向於降低基板邊緣之膜厚度均勻性(film thickness uniformity)。同時，若不使用陰影框架，電漿弧作用(plasma arcing)可能會發生在支撐板上。因此，需要一種改良的基板支撐組件。
本發明所述之實施例通常關於一種基板支撐組件。此基板支撐組件包括一支撐板，支撐板具有非原位沉積(ex-situ deposited)的陶瓷層。支撐板具有一頂表面。頂表面包括用以支撐一大面積的基板之一基板接收區和位於基板接收區外側之一外部區。陶瓷層至少設置於外部區上。
在另一實施例中，本發明揭露一種處理腔室。此處理腔室包括一腔室主體和一基板支撐組件。腔室主體包括一頂壁、一側壁以及一底壁，界定出腔室主體內的一處理區域。基板支撐組件設置於處理區域中。基板支撐組件包括一支撐板，支撐板具有非原位沉積的陶瓷層。支撐板具有一頂表面。頂表面包括用以支撐一大面積的基板之一基板接收區和位於基板接收區外側之一外部區。陶瓷層至少設置於外部區上。
在另一實施例中，本發明揭露一種在電漿增強化學氣相沉積腔室(PECVD chamber)中處理一基板的方法。此方法包括將一大面積的基板放置於沉積腔室中的支撐板之頂表面上，頂表面具有基板接收區和位於基板接收區外側之一外部區，外部區具有非原位沉積的陶瓷層。所述方法更包括進行電漿增強化學氣相沉積製程(PECVD process)以在基板上沉積一材料層。
為了對本發明之上述及其他方面有更佳的瞭解，下文特舉實施例，並配合所附圖式詳細說明如下：
第1圖繪示根據本發明一實施例之設有一基板支撐組件118的一處理腔室100之剖視圖，其中一陶瓷層200沉積於基板支撐組件118上。處理腔室100可包括一腔室本體102，腔室本體102具有側壁104與一底壁106，界定出一處理容積110。處理容積110係可經由形成於側壁104的一開口109進入。
噴頭(showerhead)108設於處理容積110中。噴頭108可以耦接至背板112。舉例來說，噴頭108可以透過在背板112端部的懸架(suspension)114耦接至背板112。一個或多個耦接支撐件(coupling support)116可用以將噴頭108耦接至背板112以幫助防止凹陷(sag)。
基板支撐組件118亦設於處理容積110中。基板支撐組件118包括一支撐板120和一耦接至支撐板120之桿122。支撐板120係用以在處理期間支撐一基板101。在一實施例中，支撐板120可由一金屬形成，例如鋁。支撐板120的一部分或全部被陽極氧化(anodized)。在安裝及使用於處理腔室100內之前，陶瓷層200(詳述於第2、3圖中)沉積於支撐板120上。換言之，陶瓷層200係非原位沉積(deposited ex-situ)在處理腔室100。陶瓷層200係用以防止在處理期間之支撐板120的電漿弧作用(plasma arcing)。關於非原位沉積的陶瓷層200的更多細節將參照第2至3圖進一步詳述於後。
請繼續參照第1圖，支撐板120包括溫度控制元件124。溫度控制元件124係用以將基板支撐組件118維持在一期望的溫度。溫度控制元件124向上延伸通過桿122，並且延伸至支撐板120的整個區域。
一升舉系統(lift system)126可耦接至桿122以升高和降低支撐板組件120。升舉銷(lift pin)128係可移動地穿透設置於支撐板組件120以將基板101與支撐板組件120間隔開以加速基板101的機器輸送(robotic transfer)。基板支撐組件118還可包括射頻回程帶(RF return strap)130以在基板支撐組件118的端部提供射頻回程路徑(RF return path)。
氣源(gas source)132可以耦接至背板112以透過背板112中的氣體出口134供應處理氣體(processing gas)。處理氣體從氣體出口134流動通過噴頭108中的氣體通道136。一真空泵111可耦接至處理腔室100以控制處理容積110內的壓力。一射頻電源138可耦合至背板112和/或耦合至噴頭108以向噴頭108提供射頻電力(RF power)。射頻電力在噴頭108和基板支撐組件118之間產生電場，從而由處理氣體在噴頭108與基板支撐組件118之間產生電漿。
遠端電漿源140，例如為一電感耦合電漿源( inductively coupled remote plasma source)，亦可耦合於氣源132與背板112之間。在處理中的基板之間，一清洗氣體(cleaning gas)可以提供至遠端電漿源140，從而產生一遠端電漿並供至處理容積110中以清洗處理腔室內的元件。清洗氣體可於處理容積110中受從射頻電源138施加到噴頭108之電力進一步激發。合適的清洗氣體包括NF3 、F2 以及SF6 ，但不限於此。
傳統的PECVD系統利用位於基板周邊的陰影框架以防止處理氣體或電漿接近基板的邊緣及背面，從而防止支撐板表面的電漿弧作用，並防止沉積(deposition)發生於基板之末端和背面上。為了增加可用於沉積之面積，本發明並不使用陰影框架。在沒有陰影框架的情況下，非原位沉積的陶瓷層200保護支撐板120之頂表面的暴露部分免於電弧及電漿的侵襲。
第2圖和第3圖繪示依據本發明一實施例之基板支撐組件118，且繪示出至少設置於支撐板120之頂表面的陽極氧化層230上的非原位沉積之一陶瓷層200。陶瓷層200係用以提供一絕緣表面以防止支撐板120的電漿弧作用。支撐板120通常包括一頂表面202。頂表面202包括一基板接收區244和一外部區206。基板接收區244係用以接收基板101。外部區206位於基板接收區244的外側。一般而言，外部區206與基板101不接觸。
陶瓷層200包括一選擇性沉積於頂表面202上的第一部分240和一沉積於支撐板120之一側201上的第二部分203。陶瓷層200可形成於至少外部區206上且部分形成於基板接收區244。在一實施例中，由陶瓷層200所覆蓋之頂表面202的表面積大於外部區206的表面積。當陶瓷層200部分沉積於基板支撐表面244上，陶瓷層200部分地在基板101下方延伸，形成一重疊區250。在一實施例中，陶瓷層200可以延伸至少5毫米(mm)到基板接收區244之上。在另一實施例中，陶瓷層200可以延伸頂表面202的整個表面。
一般而言，基板接收區244可以具有尺寸(dimension) l、x、w，其中l可以小於或等於w。陶瓷層200的內邊緣208可設置在支撐板120於寬度方向上從中心C最小一距離Dw 處，以及在長度方向上從中心C最小一距離Dl 處。由於沿著矩形之周邊的所有點對於矩形的中心並非等距離，故依據基板接收區244的長度之中點220及寬度之中點222來計算Dw 和Dl 。基板接收區244的尺寸通常係為待處理之基板的尺寸。
舉例來說，Dl 可以表示為：
Figure TW201805466AD00001
其中l表示基板接收區244的長度，以mm為單位。
舉例來說，Dw 可以表示為：
Figure TW201805466AD00002
其中w表示基板接收區244的寬度，以mm為單位。
舉例來說，給定具有尺寸為400mm × 500mm(l × w)的基板，陶瓷層的內邊緣208係設置從基板120的中心C沿l方向的：
Figure TW201805466AD00003
陶瓷層的內邊緣208係設置從基板120的中心C沿w方向上的：
Figure TW201805466AD00004
舉例來說，給定具有尺寸為1870mm × 2200mm(l × w)的基板，陶瓷層的內邊緣208係設置從基板120的中心C沿l方向上的：
Figure TW201805466AD00005
陶瓷層的內邊緣208係設置從基板120的中心C沿W方向上的：
Figure TW201805466AD00006
舉例來說，給定具有尺寸為2880mm × 3130mm(l × w)的基板，陶瓷層的內邊緣208係設置從基板120的中心C沿l方向上的：
Figure TW201805466AD00007
陶瓷層的內邊緣208係設置從基板120的中心C沿w方向上的：
Figure TW201805466AD00008
在一個實施例中，可以使用電弧噴塗沉積(arc spray deposition)技術將陶瓷層200非原位沉積於支撐板120上。在另一實施例中，可以使用物理氣相沉積(PVD)噴鍍技術將陶瓷層200非原位沉積支撐板120上。
頂表面202可以包括一陽極氧化層230，陽極氧化層230具有形成自多個孔210的一初始表面粗糙度(initial surface roughness)，初始表面粗糙度介於大約80微英吋(µinch)至23µinch之間。在陶瓷層200非原位沉積於支撐板120上之前，陽極氧化層230可先進行珠粒噴砂(bead blasting)處理。陽極氧化層230的表面粗糙度經珠粒噴砂之後降低至約為80µinch至200µinch。當支撐板120被非原位塗覆(coated ex-situ)時，陶瓷層200亦沉積進入孔210中。在一實施例中，具有陶瓷層沉積於其上的支撐板120的結果表面粗糙度(resulting surface roughness)約為2微米(µm)至10µm。在另一實施例中，陶瓷層200的孔隙度(porosity)約為3%與10%之間。在另一實施例中，陶瓷層200的均勻度(uniformity)約為5%至20%。
陶瓷層200可以具有一厚度，使得陶瓷層200防止支撐板120的電漿弧作用卻不降低基板101邊緣的電漿密度。舉例來說，陶瓷層200的厚度為10-15µm足以防止支撐板120的電漿弧作用，卻不會過厚而降低基板101邊緣的電漿密度。
在另一實施例中，陶瓷層200具有一厚度，使得陶瓷層200具有至少500伏特的一崩潰電壓(breakdown voltage)。舉例來說，陶瓷層200具有一厚度，使得陶瓷層200具有介於1000伏特至2000伏特的一崩潰電壓。在另一實施例中，陶瓷層200具有一厚度，使得陶瓷層200在頻率約為103 赫茲(Hz)具有介於大約3與大約10之間的一介電常數(dielectric constant)。在另一實施例中，陶瓷層200在頻率介於104 Hz左右與106 Hz左右之間具有介電常數介於約為5至約為40之間。
陶瓷層200可由一絕緣材料形成。在一實施例中，陶瓷層200可以由二氧化矽(SiO2 )形成。在另一實施例中，陶瓷層200可由三氧化二鋁(Al2 O3 )形成。一般而言，陶瓷層200可以由一材料製成並且具有一厚度，使得陶瓷層200能夠承受高溫的氟氣清洗過程。陶瓷層200可以具有1000磅每平方吋(psi)至2000 psi之剝離強度。在另一實施例中，陶瓷層200可以具有介於約500 維氏硬度數(HV)與約1000 HV之間的維氏硬度。
在操作過程中，將一大面積的基板放置於沉積腔室中的一支撐板的頂表面上。支撐板具有基板接收區和基板接收區外側之一外部區。外部區具有一非原位沉積的陶瓷層。進行電漿增強化學氣相沉積製程(PECVD process)以在基板上沉積一材料層。
如上所述，陶瓷層200在電漿處理期間防止支撐板120的電漿弧作用。陶瓷層200防止電漿弧作用並提升基板的沉積均勻度(deposition uniformity)。因此，陶瓷層200允許一種不使用陰影框架的處理方法，進而有利地增加基板用於裝置製造之面積。
綜上所述，雖然本發明已以實施例揭露如上，然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾。因此，本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100‧‧‧處理腔室
101‧‧‧基板
102‧‧‧腔室本體
104‧‧‧側壁
106‧‧‧底壁
108‧‧‧噴頭
109‧‧‧開口
110‧‧‧處理容積
111‧‧‧真空泵
112‧‧‧背板
114‧‧‧懸架
116‧‧‧耦接支撐件
118‧‧‧基板支撐組件
120‧‧‧支撐板
122‧‧‧桿
124‧‧‧溫度控制元件
126‧‧‧升舉系統
128‧‧‧升舉銷
130‧‧‧射頻回程帶
132‧‧‧氣源
134‧‧‧氣體出口
136‧‧‧氣體通道
138‧‧‧射頻電源
140‧‧‧遠端電漿源
200‧‧‧陶瓷層
201‧‧‧支撐板之一側
202‧‧‧頂表面
203‧‧‧陶瓷層之第二部分
206‧‧‧外部區
208‧‧‧內邊緣
210‧‧‧孔
220、222‧‧‧中點
230‧‧‧陽極氧化層
240‧‧‧陶瓷層之第一部分
244‧‧‧基板接收區
250‧‧‧重疊區
C‧‧‧中心
Dl、Dw‧‧‧距離
l‧‧‧長度
w‧‧‧寬度
第1圖繪示依據本發明一實施例之設有一基板支撐組件的一處理腔室之剖視圖。 第2圖繪示依據本發明一實施例之第1圖中的基板支撐組件之一部分的剖視圖。 第3圖繪示依據本發明一實施例之第2圖中的基板支撐組件之上視圖。 為了清楚起見，已使用相同的元件符號。在不同實施例與圖式之中，相同的元件將以相同的元件符號加以表示。此外，一個實施例的元件可以有利地適於在本揭露所述之其它實施例中使用。
101‧‧‧基板
120‧‧‧支撐板
200‧‧‧陶瓷層
201‧‧‧支撐板之一側
202‧‧‧頂表面
203‧‧‧陶瓷層之第二部分
206‧‧‧外部區
208‧‧‧內邊緣
210‧‧‧孔
230‧‧‧陽極氧化層
240‧‧‧陶瓷層之第一部分
244‧‧‧基板接收區
250‧‧‧重疊區
C‧‧‧中心

Claims (20)

  1. 一種基板支撐組件，包括： 一支撐板，具有一頂表面，該頂表面包括用以支撐大面積的一基板之一基板接收區和位於該基板接收區外側之一外部區；以及 一非原位沉積(ex-situ deposited)的陶瓷層，沉積於該支撐板之該頂表面的該外部區上。
  2. 如申請專利範圍第1項所述之基板支撐組件，其中該陶瓷層具有一厚度介於10至15µm。
  3. 如申請專利範圍第1項所述之基板支撐組件，其中該陶瓷層係由二氧化矽(SiO2 )與三氧化二鋁(Al2 O3 )其中之一所形成。
  4. 如申請專利範圍第1項所述之基板支撐組件，其中該陶瓷層沉積於該基板接收區的整個區域上。
  5. 如申請專利範圍第1項所述之基板支撐組件，其中該陶瓷層具有一內邊緣，該內邊緣係設置在最小等於該基板接收區的一半長度減去5mm的距離處。
  6. 如申請專利範圍第1項所述之基板支撐組件，其中該陶瓷層具有一厚度，使得該陶瓷層具有介於500至2000伏特之一崩潰電壓。
  7. 如申請專利範圍第1項所述之基板支撐組件，其中該陶瓷層覆蓋該支撐板的一側。
  8. 如申請專利範圍第1項所述之基板支撐組件，其中該支撐板的該頂表面被陽極氧化，以及該陶瓷層覆蓋被陽極氧化之該頂表面的一粗糙部分。
  9. 如申請專利範圍第1項所述之基板支撐組件，其中該陶瓷層係由電弧噴塗沉積(arc-spray deposited)。
  10. 一種處理腔室，包括： 一腔室主體，包括一頂壁、一側壁及一底壁，界定該腔室主體內的一處理區域；以及 一基板支撐組件，設置於該處理區域內，該基板支撐組件包括： 　　一支撐板，具有一頂表面，該頂表面包括用以支撐一大面積的基板之一基板接收區和位於該基板接收區外側之一外部區；及 　　一非原位沉積(ex-situ deposited)的陶瓷層，沉積於該支撐板之該頂表面的該外部區上。
  11. 如申請專利範圍第10項所述之處理腔室，其中該陶瓷層具有介於10至15µm的一厚度。
  12. 如申請專利範圍第10項所述之處理腔室，其中該陶瓷層係由二氧化矽(SiO2 )與三氧化二鋁(Al2 O3 )其中之一所形成。
  13. 如申請專利範圍第10項所述之處理腔室，其中該陶瓷層沉積於該基板接收區的整個區域上。
  14. 如申請專利範圍第10項所述之處理腔室，其中該陶瓷層具有一厚度，使得該陶瓷層具有介於500至2000伏特之崩潰電壓。
  15. 如申請專利範圍第10項所述之處理腔室，其中該陶瓷層覆蓋該支撐板的一側。
  16. 如申請專利範圍第10項所述之處理腔室，其中該陶瓷層具有一內邊緣，該內邊緣係設置在最小等於該基板接收區的一半長度減去5mm的距離處。
  17. 如申請專利範圍第10項所述之處理腔室，其中該支撐板的該頂表面被陽極氧化，以及該陶瓷層覆蓋該被陽極氧化之該頂表面的一粗糙部分。
  18. 如申請專利範圍第10項所述之處理腔室，其中該陶瓷層係由電弧噴塗沉積(arc-spray deposited)。
  19. 一種處理一基板的方法，包括： 將該基板放置於一支撐板上，該支撐板具有一基板接收區與該基板接收區外側之一外部區，該外部區具有一非原位沉積的陶瓷層；以及 進行電漿增強型化學氣相沉積(PECVD)製程以沉積一材料層至該基板上。
  20. 如申請專利範圍第19項之方法，其中該陶瓷層係由二氧化矽(SiO2 )所形成，且該陶瓷層具有介於10至15µm的一厚度。
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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11251019B2 (en) 2016-12-15 2022-02-15 Toyota Jidosha Kabushiki Kaisha Plasma device
JP6863199B2 (ja) * 2017-09-25 2021-04-21 トヨタ自動車株式会社 プラズマ処理装置
JP6770988B2 (ja) * 2018-03-14 2020-10-21 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置および半導体装置の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6033483A (en) * 1994-06-30 2000-03-07 Applied Materials, Inc. Electrically insulating sealing structure and its method of use in a high vacuum physical vapor deposition apparatus
TW323387B (zh) * 1995-06-07 1997-12-21 Tokyo Electron Co Ltd
US6120640A (en) * 1996-12-19 2000-09-19 Applied Materials, Inc. Boron carbide parts and coatings in a plasma reactor
US6106630A (en) * 1997-08-07 2000-08-22 Applied Materials, Inc. Ceramic-coated heating assembly for high temperature processing chamber
US8372205B2 (en) * 2003-05-09 2013-02-12 Applied Materials, Inc. Reducing electrostatic charge by roughening the susceptor
US7732056B2 (en) * 2005-01-18 2010-06-08 Applied Materials, Inc. Corrosion-resistant aluminum component having multi-layer coating
US7525787B2 (en) * 2005-09-30 2009-04-28 Lam Research Corporation Electrostatic chuck assembly with dielectric material and/or cavity having varying thickness, profile and/or shape, method of use and apparatus incorporating same
US10242888B2 (en) * 2007-04-27 2019-03-26 Applied Materials, Inc. Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance
TW201334213A (zh) * 2011-11-01 2013-08-16 Intevac Inc 處理太陽能電池晶圓的靜電吸盤
JP5633766B2 (ja) * 2013-03-29 2014-12-03 Toto株式会社 静電チャック
KR101385950B1 (ko) * 2013-09-16 2014-04-16 주식회사 펨빅스 정전척 및 정전척 제조 방법
US10266943B2 (en) * 2014-06-27 2019-04-23 Applied Materials, Inc. Plasma corrosion resistive heater for high temperature processing

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WO2017200733A1 (en) 2017-11-23
CN109072435A (zh) 2018-12-21
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KR20180131631A (ko) 2018-12-10
JP2019516864A (ja) 2019-06-20
JP6727338B2 (ja) 2020-07-22

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