JP2021063279A - スパッタリング装置 - Google Patents
スパッタリング装置 Download PDFInfo
- Publication number
- JP2021063279A JP2021063279A JP2019189433A JP2019189433A JP2021063279A JP 2021063279 A JP2021063279 A JP 2021063279A JP 2019189433 A JP2019189433 A JP 2019189433A JP 2019189433 A JP2019189433 A JP 2019189433A JP 2021063279 A JP2021063279 A JP 2021063279A
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering
- ring
- shaped member
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000001681 protective effect Effects 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 13
- 230000008034 disappearance Effects 0.000 abstract description 5
- 238000000151 deposition Methods 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 26
- 239000000853 adhesive Substances 0.000 description 13
- 230000001070 adhesive effect Effects 0.000 description 13
- 239000007795 chemical reaction product Substances 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (4)
- ターゲットが配置される真空チャンバと、ターゲットに所定電力を投入するスパッタ電源とを備え、ターゲットに電力投入して真空チャンバ内にプラズマ雰囲気を形成し、ターゲットをスパッタリングすることで、真空チャンバ内に存する基板表面に誘電体膜を成膜するスパッタリング装置であって、
ターゲットのスパッタリング時、アノードとして機能するリング状部材をターゲットの周囲を囲うように設けたものにおいて、
ターゲットの厚み方向に沿うターゲットのスパッタ面側を上として、リング状部材は、その上面がターゲットのスパッタ面より下方に位置するように配置されると共に、ターゲットの周囲に設けてリング状部材の上面を部分的に覆うフローティング電位の防着板が設けられ、リング状部材を正の電位に保持する正電位保持手段を更に備えることを特徴とするスパッタリング装置。 - 前記スパッタ電源がパルスDC電源で構成され、その負の出力が前記ターゲットに及びその正の出力が前記リング状部材に夫々接続されて前記スパッタ電源が正電位保持手段を兼用するように構成したことを特徴とする請求項1記載のスパッタリング装置。
- 前記リング状部材を冷却する冷却手段を更に備えることを特徴とする請求項1または請求項2記載のスパッタリング装置。
- 前記リング状部材の上面を除く部分に、スパッタガスの導入を可能とするガス導入手段が付設されることを特徴とする請求項1〜3のいずれか1項記載のスパッタリング装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019189433A JP7326106B2 (ja) | 2019-10-16 | 2019-10-16 | スパッタリング装置 |
TW109124161A TWI839548B (zh) | 2019-10-16 | 2020-07-17 | 濺鍍裝置 |
CN202011077274.2A CN112663003A (zh) | 2019-10-16 | 2020-10-10 | 溅射装置 |
KR1020200134190A KR20210045340A (ko) | 2019-10-16 | 2020-10-16 | 스퍼터링 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019189433A JP7326106B2 (ja) | 2019-10-16 | 2019-10-16 | スパッタリング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021063279A true JP2021063279A (ja) | 2021-04-22 |
JP7326106B2 JP7326106B2 (ja) | 2023-08-15 |
Family
ID=75403996
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019189433A Active JP7326106B2 (ja) | 2019-10-16 | 2019-10-16 | スパッタリング装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7326106B2 (ja) |
KR (1) | KR20210045340A (ja) |
CN (1) | CN112663003A (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1024532A (ja) * | 1996-07-11 | 1998-01-27 | Mitsubishi Plastics Ind Ltd | 耐候性成形品 |
JPH10204629A (ja) * | 1997-01-16 | 1998-08-04 | Matsushita Electric Ind Co Ltd | スパッタ装置 |
JPH1136075A (ja) * | 1997-07-18 | 1999-02-09 | Shibaura Eng Works Co Ltd | 毎葉式マグネトロンスパッタ装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3685670B2 (ja) | 1999-12-03 | 2005-08-24 | 松下電器産業株式会社 | Dcスパッタリング装置 |
JP4717186B2 (ja) * | 2000-07-25 | 2011-07-06 | 株式会社アルバック | スパッタリング装置 |
WO2008149891A1 (ja) * | 2007-06-04 | 2008-12-11 | Canon Anelva Corporation | 成膜装置 |
JP2010024532A (ja) * | 2008-07-24 | 2010-02-04 | Asahi Glass Co Ltd | マグネトロンスパッタ装置、成膜方法、及び光学部品の製造方法 |
US8066857B2 (en) * | 2008-12-12 | 2011-11-29 | Fujifilm Corporation | Shaped anode and anode-shield connection for vacuum physical vapor deposition |
JP5414340B2 (ja) * | 2009-04-24 | 2014-02-12 | 株式会社アルバック | スパッタリング方法 |
CN201729871U (zh) * | 2010-06-17 | 2011-02-02 | 北京清华阳光能源开发有限责任公司 | 磁控溅射靶屏蔽装置 |
-
2019
- 2019-10-16 JP JP2019189433A patent/JP7326106B2/ja active Active
-
2020
- 2020-10-10 CN CN202011077274.2A patent/CN112663003A/zh active Pending
- 2020-10-16 KR KR1020200134190A patent/KR20210045340A/ko unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1024532A (ja) * | 1996-07-11 | 1998-01-27 | Mitsubishi Plastics Ind Ltd | 耐候性成形品 |
JPH10204629A (ja) * | 1997-01-16 | 1998-08-04 | Matsushita Electric Ind Co Ltd | スパッタ装置 |
JPH1136075A (ja) * | 1997-07-18 | 1999-02-09 | Shibaura Eng Works Co Ltd | 毎葉式マグネトロンスパッタ装置 |
Also Published As
Publication number | Publication date |
---|---|
JP7326106B2 (ja) | 2023-08-15 |
KR20210045340A (ko) | 2021-04-26 |
TW202117043A (zh) | 2021-05-01 |
CN112663003A (zh) | 2021-04-16 |
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