KR20210045340A - 스퍼터링 장치 - Google Patents

스퍼터링 장치 Download PDF

Info

Publication number
KR20210045340A
KR20210045340A KR1020200134190A KR20200134190A KR20210045340A KR 20210045340 A KR20210045340 A KR 20210045340A KR 1020200134190 A KR1020200134190 A KR 1020200134190A KR 20200134190 A KR20200134190 A KR 20200134190A KR 20210045340 A KR20210045340 A KR 20210045340A
Authority
KR
South Korea
Prior art keywords
target
ring
shaped member
sputtering
vacuum chamber
Prior art date
Application number
KR1020200134190A
Other languages
English (en)
Korean (ko)
Inventor
마나부 하라다
타쿠마 아라야
테츠시 후지나가
이쿠오 호소다
요시타카 고우시
수수무 이케다
하루노리 이와이
Original Assignee
가부시키가이샤 알박
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 알박 filed Critical 가부시키가이샤 알박
Publication of KR20210045340A publication Critical patent/KR20210045340A/ko

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1020200134190A 2019-10-16 2020-10-16 스퍼터링 장치 KR20210045340A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019189433A JP7326106B2 (ja) 2019-10-16 2019-10-16 スパッタリング装置
JPJP-P-2019-189433 2019-10-16

Publications (1)

Publication Number Publication Date
KR20210045340A true KR20210045340A (ko) 2021-04-26

Family

ID=75403996

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020200134190A KR20210045340A (ko) 2019-10-16 2020-10-16 스퍼터링 장치

Country Status (3)

Country Link
JP (1) JP7326106B2 (ja)
KR (1) KR20210045340A (ja)
CN (1) CN112663003A (ja)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001164360A (ja) 1999-12-03 2001-06-19 Matsushita Electronics Industry Corp Ｄｃスパッタリング装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1024532A (ja) * 1996-07-11 1998-01-27 Mitsubishi Plastics Ind Ltd 耐候性成形品
JPH10204629A (ja) * 1997-01-16 1998-08-04 Matsushita Electric Ind Co Ltd スパッタ装置
JP3096258B2 (ja) * 1997-07-18 2000-10-10 芝浦メカトロニクス株式会社 毎葉式マグネトロンスパッタ装置
JP4717186B2 (ja) * 2000-07-25 2011-07-06 株式会社アルバック スパッタリング装置
CN101542013B (zh) * 2007-06-04 2011-05-04 佳能安内华股份有限公司 形成薄膜的溅射设备
JP2010024532A (ja) * 2008-07-24 2010-02-04 Asahi Glass Co Ltd マグネトロンスパッタ装置、成膜方法、及び光学部品の製造方法
US8066857B2 (en) * 2008-12-12 2011-11-29 Fujifilm Corporation Shaped anode and anode-shield connection for vacuum physical vapor deposition
JP5414340B2 (ja) * 2009-04-24 2014-02-12 株式会社アルバック スパッタリング方法
CN201729871U (zh) * 2010-06-17 2011-02-02 北京清华阳光能源开发有限责任公司 磁控溅射靶屏蔽装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001164360A (ja) 1999-12-03 2001-06-19 Matsushita Electronics Industry Corp Ｄｃスパッタリング装置

Also Published As

Publication number Publication date
CN112663003A (zh) 2021-04-16
JP7326106B2 (ja) 2023-08-15
JP2021063279A (ja) 2021-04-22
TW202117043A (zh) 2021-05-01

Similar Documents

Publication Publication Date Title
US9689070B2 (en) Deposition ring and electrostatic chuck for physical vapor deposition chamber
US9978569B2 (en) Adjustable process spacing, centering, and improved gas conductance
KR101702895B1 (ko) 기판 처리 챔버용 냉각 차폐부
US9123511B2 (en) Process kit for RF physical vapor deposition
US8696878B2 (en) Wafer processing deposition shielding components
US7981262B2 (en) Process kit for substrate processing chamber
JP6130304B2 (ja) 保護されたバッキングプレートを有するｐｖｄスパッタリングターゲット
US20110036709A1 (en) Process kit for rf physical vapor deposition
KR20010030159A (ko) 플라즈마 처리 장치
US20080029032A1 (en) Substrate support with protective layer for plasma resistance
US20130334038A1 (en) Wafer processing deposition shielding components
KR100284248B1 (ko) 스퍼터링장치
KR20210045340A (ko) 스퍼터링 장치
US20210238741A1 (en) Cover ring and ground shield for physical vapor deposition chamber
KR101926676B1 (ko) 타겟 어셈블리
TWI801632B (zh) 用於電漿處理腔室的處理套件、用於ｒｆｐｖｄ腔室的處理套件、及ｐｖｄ腔室
TWI839548B (zh) 濺鍍裝置
CN116892007A (zh) 基板处理装置以及盖环组件