JP2016119338A - プラズマエッチング方法 - Google Patents
プラズマエッチング方法 Download PDFInfo
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- JP2016119338A JP2016119338A JP2014256635A JP2014256635A JP2016119338A JP 2016119338 A JP2016119338 A JP 2016119338A JP 2014256635 A JP2014256635 A JP 2014256635A JP 2014256635 A JP2014256635 A JP 2014256635A JP 2016119338 A JP2016119338 A JP 2016119338A
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000001020 plasma etching Methods 0.000 title claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 34
- 150000002500 ions Chemical class 0.000 claims abstract description 12
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 230000001360 synchronised effect Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 56
- 230000000052 comparative effect Effects 0.000 description 14
- 239000003507 refrigerant Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 7
- 239000002131 composite material Substances 0.000 description 6
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 5
- 229910002091 carbon monoxide Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- LGPPATCNSOSOQH-UHFFFAOYSA-N 1,1,2,3,4,4-hexafluorobuta-1,3-diene Chemical compound FC(F)=C(F)C(F)=C(F)F LGPPATCNSOSOQH-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- VRAIHTAYLFXSJJ-UHFFFAOYSA-N alumane Chemical compound [AlH3].[AlH3] VRAIHTAYLFXSJJ-UHFFFAOYSA-N 0.000 description 1
- -1 and CF Chemical compound 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
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- H01J37/32082—Radio frequency generated discharge
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- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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Abstract
Description
Claims (8)
- 被処理体の配置された処理容器内に、フルオロカーボンを含む処理ガスを導入し、前記処理容器内の電極間に前記処理ガスをプラズマ化する第1の高周波電力と、前記被処理体にイオンを引き込むための第2の高周波電力であって周波数が第1の高周波電力よりも低い前記第2の高周波電力とが与えられ、生成されたプラズマにより、前記被処理体をエッチングするプラズマエッチング方法であって、
前記被処理体は、互いに異なる誘電率を有し、交互に積層された第1の膜及び第2の膜を含む多層膜と、前記多層膜上に設けられたマスクとを有し、
前記第1の高周波電力を前記電極に与えつつ、前記第2の高周波電力のONとOFFを周期的に切り替えて前記電極に与える第1工程と、
前記第1の高周波電力を前記電極に与えつつ、前記第2の高周波電力を連続的にONにして前記電極に与える第2工程と、
を備え、
前記第1工程及び前記第2工程は、エッチングによって形成される孔又は溝の内壁への前記処理ガス由来の付着物がこれらの開口入口付近から深部まで広がるように、交互に実行される、
ことを特徴とするプラズマエッチング方法。 - 前記第1工程の行われる第1期間T1、及び、前記第2工程の行われる第2期間T2は、それぞれ第1期間T1=10秒〜60秒、第2期間T2=10秒〜60秒に設定されることを特徴とする請求項1に記載のプラズマエッチング方法。
- 前記フルオロカーボンを含む処理ガスは、C4F6ガス、CH2F2ガス、及び、O2ガスを含むことを特徴とする請求項2に記載のプラズマエッチング方法。
- 前記第1工程及び前記第2工程において、前記第1の高周波電力のONとOFFは、前記第2の高周波電力のONとOFFに同期している、
ことを特徴とする請求項1〜3の何れか一項に記載のプラズマエッチング方法。 - 前記第1の膜は酸化シリコン膜であり、前記第2の膜は窒化シリコン膜である、
請求項1〜4の何れか一項に記載のプラズマエッチング方法。 - 前記第1の膜は酸化シリコン膜であり、前記第2の膜はポリシリコン膜である、
請求項1〜4の何れか一項に記載のプラズマエッチング方法。 - 前記第1の膜と前記第2の膜は、合計24層以上積層されている、
請求項1〜6の何れか一項に記載のプラズマエッチング方法。 - 前記マスクは、アモルファスカーボン製である、請求項1〜7の何れか一項に記載のプラズマエッチング方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014256635A JP6410592B2 (ja) | 2014-12-18 | 2014-12-18 | プラズマエッチング方法 |
KR1020150173955A KR102438638B1 (ko) | 2014-12-18 | 2015-12-08 | 플라즈마 에칭 방법 |
US14/970,671 US9548214B2 (en) | 2014-12-18 | 2015-12-16 | Plasma etching method of modulating high frequency bias power to processing target object |
SG10201510383WA SG10201510383WA (en) | 2014-12-18 | 2015-12-17 | Plasma Etching Method |
CN201510958555.1A CN105719930B (zh) | 2014-12-18 | 2015-12-18 | 等离子体蚀刻方法 |
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JP2014256635A JP6410592B2 (ja) | 2014-12-18 | 2014-12-18 | プラズマエッチング方法 |
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JP2016119338A true JP2016119338A (ja) | 2016-06-30 |
JP6410592B2 JP6410592B2 (ja) | 2018-10-24 |
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US (1) | US9548214B2 (ja) |
JP (1) | JP6410592B2 (ja) |
KR (1) | KR102438638B1 (ja) |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018085389A (ja) * | 2016-11-21 | 2018-05-31 | 東芝メモリ株式会社 | ドライエッチング方法及び半導体装置の製造方法 |
WO2023238740A1 (ja) * | 2022-06-08 | 2023-12-14 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US11694911B2 (en) * | 2016-12-20 | 2023-07-04 | Lam Research Corporation | Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead |
JP6878174B2 (ja) * | 2017-06-29 | 2021-05-26 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
Citations (4)
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JP2013033856A (ja) * | 2011-08-02 | 2013-02-14 | Tokyo Electron Ltd | プラズマエッチング方法 |
WO2013118660A1 (ja) * | 2012-02-09 | 2013-08-15 | 東京エレクトロン株式会社 | 半導体製造装置の製造方法及び半導体製造装置 |
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JP3681533B2 (ja) | 1997-02-25 | 2005-08-10 | 富士通株式会社 | 窒化シリコン層のエッチング方法及び半導体装置の製造方法 |
JP5192209B2 (ja) * | 2006-10-06 | 2013-05-08 | 東京エレクトロン株式会社 | プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体 |
JP5514413B2 (ja) * | 2007-08-17 | 2014-06-04 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
US8383001B2 (en) * | 2009-02-20 | 2013-02-26 | Tokyo Electron Limited | Plasma etching method, plasma etching apparatus and storage medium |
US8993449B2 (en) * | 2009-08-14 | 2015-03-31 | Ulvac, Inc. | Etching method |
US9117767B2 (en) * | 2011-07-21 | 2015-08-25 | Lam Research Corporation | Negative ion control for dielectric etch |
JP5977509B2 (ja) * | 2011-12-09 | 2016-08-24 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP5808012B2 (ja) * | 2011-12-27 | 2015-11-10 | 東京エレクトロン株式会社 | プラズマ処理装置 |
CN103730316B (zh) * | 2012-10-16 | 2016-04-06 | 中微半导体设备(上海)有限公司 | 一种等离子处理方法及等离子处理装置 |
US9054050B2 (en) * | 2013-11-06 | 2015-06-09 | Tokyo Electron Limited | Method for deep silicon etching using gas pulsing |
JP6230930B2 (ja) * | 2014-02-17 | 2017-11-15 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
JP6327970B2 (ja) * | 2014-06-19 | 2018-05-23 | 東京エレクトロン株式会社 | 絶縁膜をエッチングする方法 |
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- 2015-12-08 KR KR1020150173955A patent/KR102438638B1/ko active IP Right Grant
- 2015-12-16 US US14/970,671 patent/US9548214B2/en active Active
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JP2013033856A (ja) * | 2011-08-02 | 2013-02-14 | Tokyo Electron Ltd | プラズマエッチング方法 |
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US20140051256A1 (en) * | 2012-08-15 | 2014-02-20 | Lam Research Corporation | Etch with mixed mode pulsing |
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JP2018085389A (ja) * | 2016-11-21 | 2018-05-31 | 東芝メモリ株式会社 | ドライエッチング方法及び半導体装置の製造方法 |
WO2023238740A1 (ja) * | 2022-06-08 | 2023-12-14 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
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SG10201510383WA (en) | 2016-07-28 |
CN105719930A (zh) | 2016-06-29 |
KR20160074397A (ko) | 2016-06-28 |
KR102438638B1 (ko) | 2022-08-31 |
US9548214B2 (en) | 2017-01-17 |
JP6410592B2 (ja) | 2018-10-24 |
CN105719930B (zh) | 2018-01-09 |
US20160181119A1 (en) | 2016-06-23 |
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