CN102272894A - Plasma processing apparatus - Google Patents
Plasma processing apparatus Download PDFInfo
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- CN102272894A CN102272894A CN2010800040969A CN201080004096A CN102272894A CN 102272894 A CN102272894 A CN 102272894A CN 2010800040969 A CN2010800040969 A CN 2010800040969A CN 201080004096 A CN201080004096 A CN 201080004096A CN 102272894 A CN102272894 A CN 102272894A
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- 239000000758 substrate Substances 0.000 claims abstract description 205
- 238000009413 insulation Methods 0.000 claims description 76
- 238000000034 method Methods 0.000 claims description 18
- 238000005516 engineering process Methods 0.000 claims description 17
- 239000011810 insulating material Substances 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 description 31
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- 238000007599 discharging Methods 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- 238000010276 construction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- -1 fluoro free radical Chemical class 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 150000003254 radicals Chemical class 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- 230000033228 biological regulation Effects 0.000 description 1
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- 230000000052 comparative effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000803 paradoxical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Disclosed is a plasma processing apparatus comprising: a base member (3) having a first base surface (33), a second base surface (33a) and a base step portion (34); an insulating plate (35) which is formed from an insulating material and arranged on the second base surface (33a), while having a height equal to or less than the height from the second base surface (33a) to the upper surface (10a) of a substrate (10) that is arranged on the first base surface (33); a shower plate (5) having a first shower surface (5a), a second shower surface (5b) and a shower step portion (42); and an electrode mask (43) which is formed from an insulating material and so arranged on the second shower surface (5b) as to face the insulating plate (35), while having a height equal to or less than the height from the second shower surface (5b) to the first shower surface (5a).
Description
Technical field
The present invention relates to plasma processing apparatus.
The application is willing to advocate priority 2009-004022 number based on the spy of application on January 9th, 2009, quotes its content at this.
Background technology
All the time, known a kind of use plasma decomposes unstrpped gas, film forming plasma activated chemical vapour deposition (CVD) device (for example, referring to Patent Document 1) on substrate.
When using this plasma CVD equipment to make solar cell, particularly make when utilizing the solar cell of microcrystal silicon (μ c-Si), need the high speed of film forming speed from the viewpoint of productivity ratio.
In order to realize the high speed of film forming speed, make to the shower plate surface of substrate surface ejection film forming gas and state (narrow gap) high pressure exhaustion method down that the distance between the substrate surface is dwindled comparatively effective.
For example, as shown in Figure 3, in existing plasma CVD equipment 100, dispose at the circumference of the circumference of substrate 10 and shower plate 105 under the state of the mask parts 135,143 that form by insulating material and carry out film forming.
This mask parts the 135, the 143rd, for be suppressed at the plasma that produces in the film formation space to (between shower plate 105 and the substrate 10) between electrode with outdiffusion, just for plasma being enclosed in the film formation space and be provided with.
In addition, be configured in each structure member meeting thermal expansion in the CVD device, thereby between each parts, produce friction.In order to reduce as far as possible because of this fricative particle mask parts 135,143 are set.
Patent documentation 1: TOHKEMY 2000-58518 communique
Yet in existing plasma CVD equipment 100, the mask parts 135 with surperficial 135c are arranged on the circumference of substrate 10.In addition, the mask parts 143 with surperficial 143a are arranged on the circumference of the shower plate 105 with surperficial 105a.In addition, dispose shower plate 105 and substrate 10 with the surperficial 105a of shower plate 105 and the opposed mode of upper surface 10a of substrate 10.
In this existing structure, particularly on the vertical direction of substrate 10, distance between surface 135c and the surperficial 105a is less than the distance between upper surface 10a and the surperficial 105a, and the distance between surperficial 143a and the surperficial 135c is less than the distance between surperficial 105a and the surperficial 135c.
Therefore, be difficult to realize the distance setting between the surperficial 105a of the upper surface 10a of substrate 10 and shower plate 105 is carried out to get off for for example 10 millimeters (mm) the narrow gap technology of film.
Particularly, when making the mask parts 135,143 of thickness attenuation be used for existing plasma CVD equipment 100 through processing, there is the frequent problem that mask parts 135,143 break that takes place.
In addition, when the structure that does not change existing plasma CVD equipment 100, and when in this plasma CVD device 100 distance setting between substrate 10 and the shower plate 105 being narrow gap, the distance that mutual opposed mask parts are 135,143 becomes very narrow.The path (gap) of consequently discharging film forming gas narrows down.
Just, for example work as according to the operation of P layer, I layer and N layer being carried out continuously film forming, when forming mutually different multiple film in same chamber, interelectrode distance (distance between substrate 10 and the shower plate 105) is changed a little, conductivity will take place than cataclysm.Therefore, have the change along with conductivity, it is unstable that the inner evenness of gas flow becomes, the thickness uneven problem that becomes.
Summary of the invention
In view of this, even the invention provides a kind ofly when carrying out narrow gap technology, also plasma can be enclosed in interelectrode plasma processing apparatus.
In order to solve above-mentioned problem, the plasma processing apparatus of first mode of the present invention comprises: chamber, and introducing technology gas generates the plasma that is formed by described process gas; Substrate parts, have mounting and have first basal surface of substrate, second basal surface of the circumference setting of described first basal surface and be arranged on described first basal surface and described second basal surface between the substrate stage portion, and be configured in the described chamber; Insulation board has the height below the height (distance) of the upper surface of the described substrate of described first basal surface from described second basal surface to mounting, and is configured on described second basal surface, is formed by megohmite insulant; Shower plate, have the first shower face that is formed with squit hole, the second shower face of the circumference setting of the described first shower face and be arranged on the described first shower face and the described second shower face between the shower stage portion, and provide described process gas, and be configured in the described chamber to described substrate; And the electrode mask, have the height below the height (distance) from the described second shower face to the described first shower face, to be configured on the described second shower face, form by megohmite insulant with the opposed mode of described insulation board.
In plasma processing apparatus, (between substrate parts and the shower plate) is applied with alternating voltage between the electrode in being disposed at chamber.Between electrode, generate the plasma that forms by process gas in view of the above.
In this plasma processing unit, the zone of described insulation board is arranged is that the zone of described substrate is arranged is to be formed with stage portion between the substrate-placing face for plate mounting surface and mounting to mounting in described substrate parts.In described substrate and described insulation board mounting under the state of described substrate parts, the slave plate mounting surface to the height on the surface of described insulation board for the slave plate mounting surface below the height of the upper surface of described substrate.
In addition, in described shower plate mounting the zone of described electrode mask is arranged is that the zone that is formed with squit hole in mask mounting surface and the described shower plate is to be formed with stage portion between the squit hole formation face.Be disposed under the state of described shower plate at described electrode mask, the height on the surface from the mask mounting surface to described electrode mask is to form below the height of face from the mask mounting surface to squit hole.
Owing to so constitute plasma processing apparatus, therefore in the film formation space between the surface of upper surface that is formed at substrate and shower plate (the first shower face, squit hole form face), promptly the distance between the first shower face (squit hole formation face) is the shortest can to make the upper surface of substrate and the zone that is formed with squit hole of shower plate.
Therefore, the thickness of insulation board and the thickness of electrode mask are not impacted, just can setting substrate and shower plate between distance, thereby can realize narrow gap.
In addition, owing to be formed with stage portion (substrate stage portion and shower stage portion), therefore can use insulation board and electrode mask, thereby can prevent that insulation board and electrode mask from breaking with adequate thickness.
In addition, by configuration insulation board and electrode mask, plasma can be enclosed in (between shower plate and the substrate) between electrode.
As a result of, even when carrying out narrow gap technology, also plasma can be enclosed between electrode.
And then, even when the distance setting between substrate and the shower plate is narrow gap, also can between insulation board and electrode mask, be formed for discharging enough gaps of film forming gas, thereby can make the inner evenness stabilisation of gas flow, can make uniform film thickness.
In order to solve above-mentioned problem, the plasma processing apparatus of second mode of the present invention comprises: chamber, and introducing technology gas generates the plasma that is formed by described process gas; Substrate parts, have mounting and have first basal surface of substrate, second basal surface of the circumference setting of described first basal surface and be arranged on described first basal surface and described second basal surface between the substrate stage portion, and be configured in the described chamber; Insulation board has the height below the height (distance) of the upper surface of the described substrate of described first basal surface from described second basal surface to mounting, and is configured on described second basal surface, is formed by megohmite insulant; Shower plate provides described process gas to described substrate, and is configured in the described chamber; And the electrode mask, to be configured in the circumference of described shower plate, form by megohmite insulant with the opposed mode of described insulation board.
In plasma processing apparatus, (between substrate parts and the shower plate) is applied with alternating voltage between the electrode in being disposed at chamber.Between electrode, generate the plasma that forms by process gas in view of the above.
In this plasma processing unit, the zone of described insulation board is arranged is that the zone of described substrate is arranged is to be formed with stage portion between the substrate-placing face for plate mounting surface and mounting to mounting in described substrate parts.In described substrate and described insulation board mounting under the state of described substrate parts, the slave plate mounting surface to the height on the surface of described insulation board for the slave plate mounting surface below the height of the upper surface of described substrate.
Owing to so constitute plasma processing apparatus, therefore in the film formation space between the surface of the upper surface that is formed at substrate and shower plate, the zone that is formed with squit hole that can compare the upper surface that in the past shortened substrate and shower plate is the distance between the first shower face (squit hole formation face).
Therefore, the distance between substrate and the shower plate can be shortened, thereby narrow gap technology can be realized.
In addition, owing to be formed with stage portion (substrate stage portion), therefore can use insulation board, thereby can prevent that insulation board from breaking with adequate thickness.
In addition, by configuration insulation board and electrode mask, plasma can be enclosed in (between shower plate and the substrate) between electrode.
As a result of, even when carrying out narrow gap technology, also plasma can be enclosed between electrode.
And then, even when the distance setting between substrate and the shower plate is narrow gap, also can between insulation board and electrode mask, be formed for discharging enough gaps of film forming gas, thereby can make the inner evenness stabilisation of gas flow, can make uniform film thickness.
In order to solve above-mentioned problem, the plasma processing apparatus of Third Way of the present invention comprises: chamber, and introducing technology gas generates the plasma that is formed by described process gas; Substrate parts is configured in the described chamber, and mounting has substrate; Insulation board is configured in the circumference of described substrate parts, is formed by megohmite insulant; Shower plate, have the first shower face that is formed with squit hole, the second shower face of the circumference setting of the described first shower face and be arranged on the described first shower face and the described second shower face between the shower stage portion, and provide described process gas, and be configured in the described chamber to described substrate; And the electrode mask, have the height below the height (distance) from the described second shower face to the described first shower face, to be configured on the described second shower face, form by megohmite insulant with the opposed mode of described insulation board.
In plasma processing apparatus, (between substrate parts and the shower plate) is applied with alternating voltage between the electrode in being disposed at chamber.Between electrode, generate the plasma that forms by process gas in view of the above.
In this plasma processing unit, the zone of described electrode mask is arranged is that the zone that is formed with squit hole in mask mounting surface and the described shower plate is to be formed with stage portion between the squit hole formation face to mounting in described shower plate.Be disposed under the state of described shower plate at described electrode mask, the height on the surface from the mask mounting surface to described electrode mask is to form below the height of face from the mask mounting surface to squit hole.
Owing to so constitute plasma processing apparatus, therefore in the film formation space between the surface of the upper surface that is formed at substrate and shower plate, the zone that is formed with squit hole that can compare the upper surface that in the past shortened substrate and shower plate is the distance between the first shower face (squit hole formation face).
Therefore, the distance between substrate and the shower plate can be shortened, thereby narrow gap technology can be realized.
In addition, owing to be formed with stage portion (shower stage portion), therefore can use electrode mask, thereby can prevent that the electrode mask from breaking with adequate thickness.
In addition, by configuration insulation board and electrode mask, plasma can be enclosed in (between shower plate and the substrate) between electrode.
As a result of, even when carrying out narrow gap technology, also plasma can be enclosed between electrode.
And then, even when the distance setting between substrate and the shower plate is narrow gap, also can between insulation board and electrode mask, be formed for discharging enough gaps of film forming gas, thereby can make the inner evenness stabilisation of gas flow, can make uniform film thickness.
In addition, in the plasma processing apparatus of above-mentioned first mode and second mode, preferred described insulation board comprises: first bearing surface is connected to the side of described substrate; And protuberance, having second bearing surface, described second bearing surface is connected to the back side opposite with the described upper surface of described substrate.
In this structure, insulation board has the outstanding protuberance along the central authorities of the basad parts of second basal surface.
Owing to so constitute plasma processing apparatus, therefore be equipped with insulation board when uploading at substrate parts (second basal surface), go up and insulation board is uploaded when being equipped with substrate at substrate parts (first basal surface), the side of substrate contacts with first bearing surface, and the back side of substrate contacts with second bearing surface.And from the vertical direction of substrate, substrate and protuberance are overlapping.
Therefore, the film forming gas that sprays from shower plate provides (injection) to substrate or insulation board, can prevent that film forming gas from contacting with substrate parts.
Therefore, can prevent between shower plate and substrate parts to produce plasma and on substrate parts, to form film.
According to the present invention, in the film formation space between the surface of upper surface that is formed at substrate and shower plate, promptly the distance between the first shower face (squit hole formation face) is the shortest can to make the upper surface of substrate and the zone that is formed with squit hole of shower plate.
Therefore, the thickness of insulation board and the thickness of electrode mask are not impacted, just can setting substrate and shower plate between distance, thereby can realize narrow gap.
In addition,, therefore can use insulation board and electrode mask, can prevent that insulation board and electrode mask from breaking with adequate thickness owing to be formed with stage portion (substrate stage portion and shower stage portion).
In addition, by configuration insulation board and electrode mask, plasma can be enclosed in (between shower plate and the substrate) between electrode.
As a result of, even when carrying out narrow gap technology, also plasma can be enclosed between electrode.
Description of drawings
Fig. 1 is the summary construction diagram of the plasma CVD equipment in the embodiments of the present invention.
Fig. 2 is the summary construction diagram of the plasma CVD equipment in the embodiments of the present invention, and is to amplify the cutaway view be illustrated among Fig. 1 by the part shown in the symbol A.
Fig. 3 is the summary construction diagram of existing plasma CVD equipment, and is the cutaway view that the part corresponding with Fig. 2 is shown.
Embodiment
Below, describe based on the execution mode of accompanying drawing plasma processing apparatus involved in the present invention.
In addition, in employed each accompanying drawing of following explanation, each structural element is made as the size of the degree that can discern on accompanying drawing, so suitably makes the size and the ratio and actual different of each structural element.
In addition, in the present embodiment, the film formation device that uses plasma CVD method is described.
Fig. 1 is the summary construction diagram of the film formation device in the present embodiment.
As shown in Figure 1, the film formation device 1 of enforcement plasma CVD method has vacuum chamber 2 (chamber).
Bottom 11 at vacuum chamber 2 is formed with peristome.Insert at this peristome and to be connected with pillar 25, pillar 25 is configured in the bottom of vacuum chamber 2.Front end (in the vacuum chamber 2) at pillar 25 is connected with the tabular substrate parts 3 that is built-in with heater 16.
On the top of vacuum chamber 2, electrode flange 4 is installed via insulating flange 31.
In addition, on vacuum chamber 2, be connected with blast pipe 27.Front end at blast pipe 27 is provided with vacuum pump 28.Vacuum pump 28 reduces pressure so that become vacuum state in the vacuum chamber 2.
In addition, pillar 25 is connected with the elevating mechanism that is arranged on vacuum chamber 2 outsides (not shown), can move up and down on the vertical direction of substrate 10.Just, the substrate parts 3 that is connected in pillar 25 front ends is constituted as lifting along the vertical direction.
In addition, the outer setting at vacuum chamber 2 has bellows (ベ ロ one ズ) 26 to cover the periphery of pillar 25.
Electrode flange 4 is positioned on the insulating flange 31, and forms tabular.
Be connected with conductor 32 at electrode flange 4 in the face of on the face of film formation space.Front end at conductor 32 is equipped with tabular shower plate 5.
And, between shower plate 5 and electrode flange 4, be formed with space 24.
In addition, on electrode flange 4, be connected with gas introduction tube 7.Gas introduction tube 7 provides portion 21 to supply raw materials gas (for example, SiH4) to space 24 from the film forming gas that is arranged on vacuum chamber 2 outsides.
In addition, with reference to figure 2 and as described later, shower plate 5 has: be provided with a plurality of gas squit holes 6 the first shower face 5a, the second shower face 5b of the circumference setting of the first shower face 5a and be arranged on the first shower face 5a and the second shower face 5b between shower stage portion 42.Gas squit hole 6 connects shower plate 5.The film forming gas that imports in the space 24 is provided in the vacuum chamber 2 by gas squit hole 6.
In addition, electrode flange 4 constitutes by electric conducting material with shower plate 5.Electrode flange 4 is connected with the RF power supply (high frequency electric source) 9 that is arranged on vacuum chamber 2 outsides.
And then, on vacuum chamber 2, be connected with the gas introduction tube 8 different with gas introduction tube 7.
Gas introduction tube 8 is provided with fluorine gas portion 22 and radical source 23 is provided.The fluorine gas that provides portion 22 to provide from fluorine gas is provided radical source 23.The fluoro free radical that gas introduction tube 8 obtains the decomposition fluorine gas offers the film formation space in the vacuum chamber 2.
When substrate 10 is configured on first basal surface 33 of substrate parts 3, substrate 10 and shower plate 5 mutually near and parallel.
Disposing on the substrate parts 3 under the state of substrate 10, film forming gas is provided for film formation space by gas squit hole 6 towards the surface of substrate 10.
In addition, be provided with the heater 16 that is connected with power line in the inside of substrate parts 3.The temperature of substrate parts 3 is adjusted into the temperature of regulation by heater 16.The power line of heater 16 is in the substantial middle portion from the substrate parts 3 of the vertical direction of substrate parts 3, and outstanding from the bottom surface 17 of substrate parts 3, inserts and leads to the inside of pillar 25, derives to the outside of vacuum chamber 2.
And heater 16 is connected with power supply (not shown) in the outside of vacuum chamber 2, regulates the temperature of substrate parts 3.
In addition, a plurality of ground plates 30 that connect between substrate parts 3 and the vacuum chamber 2 roughly equally spaced dispose on the bottom 11 of vacuum chamber 2.
This ground plate 30 is formed by flexible metal sheet, for example is made of nickel system alloy or aluminium alloy etc.
Fig. 2 amplifies the cutaway view of expression by the part shown in the symbol A of Fig. 1.
In addition, in the following description, " low position " be meant from the position of film formation space on the direction of the bottom 11 of vacuum chamber 2, compare a side position, the meaning that the opposing party's position is lower.In addition, " high position " be meant from the position of film formation space on the direction of electrode flange 4, compare a side position, the meaning that the opposing party's position is higher.
As shown in Figure 2, the circumference on first basal surface 33 of substrate parts 3 is provided with the second basal surface 33a that is formed at the position lower than first basal surface 33.Between first basal surface 33 and the second basal surface 33a, be formed with substrate stage portion 34.The position of substrate stage portion 34 on the horizontal direction of first basal surface 33 is confirmed as, and compares the length (diameter) of substrate 10, makes the length (diameter) of first basal surface 33 become littler.That is, when substrate 10 was positioned on first basal surface 33 of substrate parts 3, the position of the circumference of substrate 10 on the horizontal direction of substrate 10 was more outstanding than substrate stage portion 34.In other words, the peripheral part of substrate 10 is in the outside of first basal surface 33.
Just, substrate stage portion 34 is formed on the position with the back side 10c butt of substrate 10.
In addition, on the second basal surface 33a that is formed at the position lower than first basal surface 33 via substrate stage portion 34, mounting has insulation board 35.Insulation board 35 forms the frame shape along the circumference of substrate 10.As the material of insulation board 35, for example adopt aluminium oxide as insulator.
The thickness of insulation board 35 (highly) be from the second basal surface 33a to mounting below the height of the upper surface 10 of the substrate 10 of first basal surface 33.In the present embodiment, when insulation board 35 mountings during in the second basal surface 33a, the position of the surperficial 35c of insulation board 35 is consistent on the vertical direction of substrate 10 with the position of the upper surface 10a of substrate 10.
In addition, insulation board 35 has when insulation board 35 mountings during in the second basal surface 33a, at least all covers the size of the second basal surface 33a on the vertical direction of substrate 10.
In addition, insulation board 35 comprises the first bearing surface 35a of the side 10b that is connected to substrate 10 and the second bearing surface 35d that is connected to the back side 10c opposite with the upper surface 10a of substrate 10.In other words, insulation board 35 has the outstanding protuberance 35b along the central authorities of the basad parts 3 of the second basal surface 33a.Protuberance 35b is positioned under the back side 10c of substrate 10, is connected to the back side 10c of substrate 10.In addition, protuberance 35b roughly is connected to substrate stage portion 34.
In addition, in the present embodiment, insulation board 35 forms more outstanding than the end of substrate parts 3 in the horizontal direction, is arranged on the circumference (the second basal surface 33a) of substrate parts 3.The end of insulation board 35 is supported by the support component 36 of support base parts 3.
In addition, with the inner surface of support component 36 opposed vacuum chambers 2 on, the insulator 37 that is for example formed by aluminium oxide is installed.
On the other hand, as shown in Figure 2, the circumference on the first shower face 5a of shower plate 5 is provided with the second shower face 5b that is formed at the position higher than the first shower face 5a.Between the first shower face 5a and the second shower face 5b, be formed with shower stage portion 42.
In addition, be formed on the second shower face 5b of the position higher than the first shower face 5a via shower stage portion 42, mounting has the electrode mask 43 that forms the frame shape.
As the material of electrode mask 43, for example adopt aluminium oxide as insulator.Electrode mask 43 is to be configured on the second shower face 5b with insulation board 35 opposed modes.
The thickness of electrode mask 43 (highly) be from the second shower face 5b below the height of the first shower face 5a.In the present embodiment, when electrode mask 43 mountings during in the second shower face 5b, the position of the surperficial 43a of electrode mask 43 is consistent on the vertical direction of shower plate 5 with the position of the first shower face 5a.
In addition, electrode mask 43 has when electrode mask 43 mountings during in the second shower face 5b, at least all covers the size of the second shower face 5b on the vertical direction of shower plate 5.
In addition, in the present embodiment, electrode mask 43 forms more outstanding than the end of shower plate 5 in the horizontal direction.In addition, electrode mask 43 have with support the support component 44 of shower plate 5 and be arranged on vacuum chamber 2 and insulating flange 31 between the surface coverage of support component 45 size of getting up.
Effect when then, use film formation device 1 being carried out film forming on substrate 10 describes.
Use the film formation device 1 that constitutes as mentioned above before forming film on the surface of substrate 10, use vacuum pump 28 to come reducing pressure in the vacuum chamber 2.
Keep in vacuum chamber 2 under the state of vacuum, substrate 10 is moved in the vacuum chamber 2, is positioned on the substrate parts 3.
Here, before the mounting substrate 10, substrate parts 3 is positioned at the downside of vacuum chamber 2.
Just, before moving into substrate 10,, therefore can use mechanical arm (not shown) easily substrate 10 to be positioned on the substrate parts 3 because the interval between substrate parts 3 and the shower plate 5 broadens.
After substrate 10 is positioned on the substrate parts 3, start lowering or hoisting gear (not shown), pillar 25 is released upward, and the substrate 10 that is positioned on the substrate parts 3 also is moved upward.In view of the above, the interval between shower plate 5 and the substrate 10 is determined to be according to desirable, in order suitably to carry out film forming and required interval, and keeps this interval.
At this moment, on the vertical direction of substrate 10, the position consistency of the upper surface 10a of the position of the surperficial 35c of insulation board 35 and substrate 10, the position consistency of the position of the surperficial 43a of electrode mask 43 and the first shower face 5a.Therefore, insulation board 35 does not contact with electrode mask 43, and can dwindle the interval between substrate 10 and the shower plate 5, thereby can realize narrow gap (3～10mm).
Afterwards, import film forming gas (unstrpped gas) from gas introduction tube 7, and in vacuum chamber 2 (film formation space), provide film forming gas from gas squit hole 6.
At electrode flange 4 with vacuum chamber 2 by insulating flange 31 by electric insulation, and vacuum chamber 2 is connected under the state of earthing potential, starts RF power supply 9 and comes electrode flange 4 is applied high frequency voltage.
At this moment, between shower plate 5 and substrate parts 3, be applied in high frequency voltage and produce discharge, between the surface of electrode flange 4 and substrate 10, produce plasma.
In the plasma that so produces, film forming gas is decomposed, and produces vapor deposition reaction on the surface of substrate 10, thereby forms film on the surface of substrate 10.
In addition, when carrying out several times aforesaid film formation process repeatedly,, so can regularly clean in the vacuum chamber 2 because filmogen is attached to the internal face of vacuum chamber 2 etc.In cleaning process, the fluorine gas that provides portion 22 to provide from fluorine gas is decomposed by radical source 23, produces fluoro free radical, and the gas introduction tube 8 of fluoro free radical by being connected in vacuum chamber 2 is provided in the vacuum chamber 2.
Provide fluoro free radical by the film formation space in vacuum chamber 2 like this, thereby produce chemical reaction, remove and be attached to for example attachment of the first shower face 5a, the surperficial 43a of electrode mask 43 of shower plate 5 or the surperficial 35c of insulation board 35 etc.
According to present embodiment, in mounting the zone of insulation board 35 being arranged is that the second basal surface 33a and mounting have the zone of substrate 10 promptly to be formed with substrate stage portion 34 between first basal surface 33.And under the state of substrate parts 3, the position of the surperficial 35c of insulation board 35 is consistent on the vertical direction of substrate 10 with the position of the upper surface 10a of substrate 10 in substrate 10 and insulation board 35 mountings.In addition, in mounting the zone of electrode mask 43 being arranged is that the second shower face 5b and the zone that is formed with a plurality of squit holes 6 promptly are formed with shower stage portion 42 between the first shower face 5a.And under the state of shower plate 5, the position of the surperficial 43a of electrode mask 43 is consistent on the vertical direction of shower plate 5 with the position of the first shower face 5a in electrode mask 43 mountings.
Therefore, in the film formation space that between the first shower face 5a of the upper surface 10a of substrate 10 and shower plate 5, forms, can make the distance between the first shower face 5a of the upper surface 10a of substrate 10 and shower plate 5 the shortest.
Therefore, can not be subjected to the influence of thickness of the thickness 35 of insulation board and electrode mask 43 and distance between setting substrate 10 and the shower plate 5, thereby can realize narrow gap.
In addition, owing to be formed with stage portion 34,42 (substrate stage portion and shower stage portion), therefore can use insulation board 35 and electrode mask 43, thereby can prevent that insulation board 35 and electrode mask 43 from breaking with adequate thickness.
In addition, by configuration insulation board 35 and electrode mask 43, plasma can be enclosed in by (between shower plate 5 and the substrate 10) between electrode.
As a result of, even when carrying out narrow gap technology, also plasma can be enclosed between electrode.
And then, even when the distance setting between substrate 10 and the shower plate 5 is narrow gap, also can between insulation board 35 and electrode mask 43, be formed for discharging enough gaps of film forming gas, thereby can make the inner evenness stabilisation of air-flow, can make uniform film thickness.
Just, in the plasma processing apparatus that so constitutes, can carry out μ c-Si film forming.
In addition, insulation board 35 have the side 10b that is connected to substrate 10 the first bearing surface 35a, be connected to substrate 10 back side 10c the second bearing surface 35d and along the outstanding protuberance 35b of the central authorities of the basad parts 3 of the second basal surface 33a.When insulation board 35 mountings with this structure in substrate parts 3, and on first basal surface 33 during placement substrate 10, the back side 10c of substrate 10 contacts with second bearing surface.And from the vertical direction of substrate 10, substrate 10 is overlapping with protuberance 35b.
Therefore, because the film forming gas that provides from shower plate 5 contacts with substrate 10 or insulation board 35, therefore can prevent that film forming gas from directly contacting with substrate parts 3.
Therefore, can prevent between shower plate 5 and substrate parts 3 to produce plasma and on the surface of substrate parts 3 film forming.
In addition, electrode mask 43 forms more outstanding than the end of shower plate 5 in the horizontal direction, have with support the support component 44 of shower plate 5 and be arranged on vacuum chamber 2 and insulating flange 31 between the surface coverage of support component 45 size of getting up.By using such electrode mask 43, can be suppressed near the particle that produces the shower plate 5 and drop on the substrate 10.
Embodiment
Then, the embodiment that uses above-mentioned film formation device 1 to carry out μ c-Si film forming is described.
As shown in table 1, will be set at 27.12MHz from the power-frequency that RF power supply 9 applies, the RF power density is set at 1.2W/cm
2
In addition, the interval between shower plate 5 and the substrate 10 is set at 7mm (narrow gap), the pressure of film formation space is set at 1400Pa.
And, with SiH in the film forming gas
4Flow (slm) and H
2The ratio of flow (slm) be set at 1: 15, on substrate 10, form the film of μ c-Si.
| The RF frequency | 27.12 | MHz |
| The RF power density | 1.2 | W/cm 2 |
| Distance between electrode-substrate | 7 | mm |
| Pressure | 1,400 | Pa |
| SiH 4∶H 2 | 1∶15 | Slm |
| Film forming speed | 2.1 | nm/sec |
| Film thickness distribution | 11 | ％ |
(table 1)
Consequently can form film forming speed and be 2.1nm/sec, film thickness distribution (film thickness uniformity: thickness uniformity) be the film of 11% μ c-Si.
Then, the comparative example that uses as shown in Figure 3 existing film formation device to carry out μ c-Si film forming is described.
As shown in table 2, will be set at 27.12MHz from the power-frequency that the RF power supply applies, the RF power density is set at 1.2W/cm
2
In addition, the interval between shower plate 5 and the substrate 10 is set at 11mm, the pressure of film formation space is set at 700Pa.
And, with SiH in the film forming gas
4Flow (slm) and H
2The ratio of flow (slm) be set at 1: 15, on substrate 10, carry out μ c-Si film forming.
| The RF frequency | 27.12 | MHz |
| The RF power density | 1.2 | W/cm 2 |
| Distance between electrode-substrate | 11 | mm |
| Pressure | 700 | Pa |
| SiH 4∶H 2 | 1∶15 | Slm |
| Film forming speed | 1.1 | nm/sec |
| Film thickness distribution | 23 | ％ |
(table 2)
Consequently can form film forming speed and be 1.1nm/sec, film thickness distribution (film thickness uniformity) and be the film of 23% μ c-Si.
Therefore, shown in present embodiment, the position of surperficial 35c by using insulation board 35 is consistent on the vertical direction of substrate 10 with the position of the upper surface 10a of substrate 10, and the position of the position of the surperficial 43a of electrode mask 43 and the first shower face 5a is consistent plasma body processing unit on the vertical direction of shower plate 5, can make the film forming speed high speed, thereby can have excellent film thickness distribution (film thickness uniformity) and high-quality μ c-Si film forming.
In addition, technical scope of the present invention is not limited to above-mentioned execution mode, without departing from the spirit and scope of the present invention, can apply various changes.
That is, described concrete material of present embodiment or structure etc. are an example of the present invention, can suitably change.
For example, in the present embodiment, the position of position and the upper surface 10a of substrate 10 of surperficial 35c that insulation board 35 has been described consistent structure on the vertical direction of substrate 10, but also can adopt the position structure lower of the surperficial 35c of insulation board 35 than the position of the upper surface of substrate 10.That is, the thickness of insulation board 35 (highly) be from the second basal surface 33a to mounting below the height of the upper surface 10 of the substrate 10 of first basal surface 33.
Similarly, in the present embodiment, the position of position and the first shower face 5a of surperficial 43a that electrode mask 43 has been described consistent structure on the vertical direction of shower plate 5, but also can adopt the position structure higher of the surperficial 43a of electrode mask 43 than the position of the first shower face 5a.That is, the thickness of electrode mask 43 (highly) be from the second shower face 5b below the height of the first shower face 5a.
In addition, in the present embodiment, to the position of the position of the surperficial 35c of insulation board 35 and the upper surface 10a of substrate 10 is illustrated at the position of the position of the surperficial 43a of first consistent on the vertical direction of substrate 10 structure and electrode mask 43 and the first shower face 5a plasma processing apparatus that the second consistent structure makes up on the vertical direction of shower plate 5, but the present invention is not limited to this structure.Can also adopt the plasma processing apparatus that any structure among first structure and second structure and existing structure are made up.
Just, as long as the interval between substrate 10 and the shower plate 5 is set at the narrow gap of realization (10mm is following), just can access above-mentioned effect.In addition, as long as between insulation board 35 and electrode mask 43, be formed for discharging smoothly enough gaps of film forming gas, just can access above-mentioned effect.
And then, in the present embodiment, boundary portion at the first shower face 5a of the surperficial 43a of the boundary portion of the upper surface 10a of the surperficial 35c of insulation board 35 and substrate 10 and electrode mask 43 and shower plate 5, upper surface and side form with approximate right angle intersects, but also can form curved surface between the upper surface of this boundary portion and side.
By so forming curved surface, thereby can suppress the generation of paradoxical discharge in boundary portion.
Utilize possibility on the industry
As described in detail above, even the present invention is useful to also plasma can be enclosed in interelectrode plasma processing apparatus when carrying out narrow gap technology.
Symbol description
1 ... film formation device (plasma processing apparatus)
2 ... vacuum chamber (chamber)
3 ... substrate parts
5 ... shower plate
5a ... the first shower face
5b ... the second shower face
6 ... the gas squit hole
10 ... substrate
10a ... upper surface
10b ... the side
10c ... the back side
33 ... first basal surface
33a ... second basal surface
34 ... the substrate stage portion
35 ... insulation board
35a ... first bearing surface
35b ... protuberance
35c ... the surface
35d ... second bearing surface
42 ... the shower stage portion
43 ... the electrode mask
43a ... the surface
Claims (5)
1. a plasma processing apparatus is characterized in that, comprising:
Chamber, introducing technology gas generates the plasma that is formed by described process gas;
Substrate parts, have mounting and have first basal surface of substrate, second basal surface of the circumference setting of described first basal surface and be arranged on described first basal surface and described second basal surface between the substrate stage portion, and be configured in the described chamber;
Insulation board has from described second basal surface to the height of mounting below the height of the upper surface of the described substrate of described first basal surface, and is configured on described second basal surface, is formed by megohmite insulant;
Shower plate, have the first shower face that is formed with squit hole, the second shower face of the circumference setting of the described first shower face and be arranged on the described first shower face and the described second shower face between the shower stage portion, and provide described process gas, and be configured in the described chamber to described substrate; And
The electrode mask has from the described second shower face to the height below the height of the described first shower face, to be configured on the described second shower face with the opposed mode of described insulation board, is formed by megohmite insulant.
2. plasma processing apparatus according to claim 1 is characterized in that,
Described insulation board comprises:
First bearing surface is connected to the side of described substrate; And
Protuberance has second bearing surface, and described second bearing surface is connected to the back side opposite with the described upper surface of described substrate.
3. a plasma processing apparatus is characterized in that, comprising:
Chamber, introducing technology gas generates the plasma that is formed by described process gas;
Substrate parts, have mounting and have first basal surface of substrate, second basal surface of the circumference setting of described first basal surface and be arranged on described first basal surface and described second basal surface between the substrate stage portion, and be configured in the described chamber;
Insulation board has from described second basal surface to the height of mounting below the height of the upper surface of the described substrate of described first basal surface, and is configured on described second basal surface, is formed by megohmite insulant;
Shower plate provides described process gas to described substrate, and is configured in the described chamber; And
The electrode mask to be configured in the circumference of described shower plate with the opposed mode of described insulation board, is formed by megohmite insulant.
4. plasma processing apparatus according to claim 3 is characterized in that,
Described insulation board comprises:
First bearing surface is connected to the side of described substrate; And
Protuberance has second bearing surface, and described second bearing surface is connected to the back side opposite with the described upper surface of described substrate.
5. a plasma processing apparatus is characterized in that, comprising:
Chamber, introducing technology gas generates the plasma that is formed by described process gas;
Substrate parts is configured in the described chamber, and mounting has substrate;
Insulation board is configured in the circumference of described substrate parts, is formed by megohmite insulant;
Shower plate, have the first shower face that is formed with squit hole, the second shower face of the circumference setting of the described first shower face and be arranged on the described first shower face and the described second shower face between the shower stage portion, and provide described process gas, and be configured in the described chamber to described substrate; And
The electrode mask has from the described second shower face to the height below the height of the described first shower face, to be configured on the described second shower face with the opposed mode of described insulation board, is formed by megohmite insulant.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009-004022 | 2009-01-09 | ||
| JP2009004022 | 2009-01-09 | ||
| PCT/JP2010/000057 WO2010079753A1 (en) | 2009-01-09 | 2010-01-06 | Plasma processing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102272894A true CN102272894A (en) | 2011-12-07 |
Family
ID=42316519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010800040969A Pending CN102272894A (en) | 2009-01-09 | 2010-01-06 | Plasma processing apparatus |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP5394403B2 (en) |
| KR (1) | KR101290738B1 (en) |
| CN (1) | CN102272894A (en) |
| DE (1) | DE112010000717B4 (en) |
| TW (1) | TW201110828A (en) |
| WO (1) | WO2010079753A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112563158A (en) * | 2019-09-26 | 2021-03-26 | 株式会社爱发科 | Vacuum processing apparatus |
| CN112563158B (en) * | 2019-09-26 | 2024-04-19 | 株式会社爱发科 | Vacuum processing apparatus |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103031514B (en) * | 2011-09-30 | 2015-09-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Shading unit, there is its PVD equipment and the control method of PVD equipment |
| US11901162B2 (en) | 2019-01-07 | 2024-02-13 | Ulvac, Inc. | Vacuum processing apparatus and method of cleaning vacuum processing apparatus |
| JP2023154254A (en) | 2022-04-06 | 2023-10-19 | 株式会社アルバック | Plasma processing apparatus |
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- 2010-01-06 CN CN2010800040969A patent/CN102272894A/en active Pending
- 2010-01-06 KR KR1020117015198A patent/KR101290738B1/en active IP Right Grant
- 2010-01-06 DE DE112010000717.9T patent/DE112010000717B4/en not_active Expired - Fee Related
- 2010-01-06 TW TW099100190A patent/TW201110828A/en unknown
- 2010-01-06 WO PCT/JP2010/000057 patent/WO2010079753A1/en active Application Filing
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Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2010079753A1 (en) | 2012-06-21 |
| KR101290738B1 (en) | 2013-07-29 |
| DE112010000717T8 (en) | 2013-04-18 |
| JP5394403B2 (en) | 2014-01-22 |
| DE112010000717T5 (en) | 2012-07-05 |
| WO2010079753A1 (en) | 2010-07-15 |
| KR20110089453A (en) | 2011-08-08 |
| DE112010000717B4 (en) | 2014-02-20 |
| TW201110828A (en) | 2011-03-16 |
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Application publication date: 20111207 |