JP2005330518A - Plasma treatment device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin film production device where the generation of particles is suppressed, and further, a load of cleaning treatment is reduced. <P>SOLUTION: In the thin film production device where a gas 13 is fed from a gas nozzle 14 to the inside of a vacuum chamber 1, and further, electric power is supplied to a high frequency antenna 7 to make the gas 13 into plasma, thus a thin film 15 is deposited on a substrate 6, for the purpose of preventing the sticking of the thin film components to the inner wall face of the vacuum chamber 1, an inner tube 20 made of quartz glass is provided, and further, the inner tube 20 is heated by a heater 21. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a plasma processing apparatus that suppresses generation of particles during plasma processing.

  Currently, in the manufacture of semiconductor devices and the like, plasma processing methods using plasma CVD (Chemical Vapor Deposition) devices, plasma etching devices, and the like are known. FIG. 6 is a schematic perspective side sectional view of a thin film production apparatus (plasma CVD apparatus) which is an example of a conventional plasma processing apparatus.

  As shown in the figure, the plasma CVD apparatus is a plasma state 10 in which a gas (raw material gas) 13 such as an organometallic complex, which is a material of a thin film introduced into the vacuum chamber 1, is brought into a plasma state 10 by a high frequency incident from a high frequency antenna 7. This is an apparatus for forming a metal thin film 15 and the like by promoting a chemical reaction on the surface of the substrate 6 by active excited atoms in the plasma 10.

  In the plasma CVD apparatus and film forming method, a metal thin film or the like (hereinafter referred to as a thin film component) that is supposed to be formed on the substrate adheres and accumulates on the inner wall of the chamber 1 as the film forming process is repeated. Sometimes. The thin film component deposited on the inner wall or the like of the chamber 1 peels off during the film forming process, which is a cause of contaminating the substrate 6 as a particle source.

  On the other hand, for the purpose of improving the gas distribution and flow uniformity in the chamber, a film forming apparatus capable of producing a uniform thin film as a result has been proposed (see Patent Document 1 below). This film forming apparatus has a structure similar to the thin film manufacturing apparatus according to the present invention described later. However, in the film forming apparatus, a portion where a thin film component such as “annular protrusion (reference numeral 19)” is easily attached No countermeasures have been taken against adhesion and deposition of thin film components. That is, for the problem of adhesion / deposition of thin film components, the annular protrusion is not different from the inner wall surface of the chamber because the annular protrusion is fixed to the chamber by welding or the like.

JP 2003-17477 A

  Therefore, when a film is formed using a conventional plasma CVD apparatus, it is necessary to periodically clean the inside of the chamber to remove the attached and deposited thin film components. Further, when the cleaning process is frequently performed, the process is a cause of reducing the productivity of the thin film.

  In order to clean the inside of the chamber by etching or the like, it is desirable to increase the etching rate (cleaning rate) by heating the portion to be cleaned. However, it may be difficult to sufficiently heat the chamber only by heating with plasma. is there. In this case, it is difficult to increase the cleaning speed, and it takes a long time for the cleaning process, which causes a decrease in the productivity of the thin film.

  The present invention has been made in view of the above situation, and suppresses the generation of particles that cause substrate contamination, eliminates the need for the cleaning process in the chamber, reduces the frequency thereof, or reduces the work load thereof. An object is to provide a reduced plasma processing apparatus.

A plasma processing apparatus according to the present invention that solves the above problems is as follows.
A gas supply means for supplying a gas containing a reaction gas into the chamber;
Pressure control means for controlling the internal pressure of the chamber;
Plasma generating means for generating a plasma of the gas inside the chamber;
In the plasma processing apparatus having a support base installed below the chamber and supporting a substrate to be processed,
A wall surface protecting member that is provided inside the chamber and prevents the product of plasma treatment from adhering to the inner wall surface of the chamber;
A plasma processing apparatus comprising temperature control means for controlling the temperature of the wall surface protection member.

  By making the wall surface protection member contaminated instead, it is possible to prevent the product from adhering to and depositing on the inner wall surface of the chamber, and to remove the wall surface protection member from the chamber. The cleaning process is simplified. In addition, a plurality of wall surface protection members are prepared to eliminate the interruption of the processing process due to waiting for the wall surface protection member cleaning process, thereby improving the production efficiency of the semiconductor device. Further, by controlling the temperature of the wall surface protection member to a temperature at which the product does not adhere, the particle adhesion itself is suppressed. Examples of the plasma generating means include a spiral plasma antenna installed outside the ceiling of the chamber and a coiled plasma antenna wound around the outside of the side wall surface of the chamber.

In the plasma processing apparatus,
In the plasma processing apparatus, the wall surface protection member is made of quartz glass or ceramics.

  By using quartz glass or ceramics as the material for the wall surface protection member, the plasma resistance is improved and the life is extended, and a coil-shaped antenna wound around the outside of the side wall surface of the chamber is used as a plasma generating means. Applicable to plasma processing equipment. In addition, the weight of the member is reduced and the burden of replacement work is reduced.

In the plasma processing apparatus,
In the plasma processing apparatus, the wall surface protection member is an inner cylinder that covers an inner wall surface above the support base in the chamber.

  Since most of the particle sources are caused by the product of the plasma treatment adhering to the inner wall surface of the chamber above the support base (substrate), the inner wall that covers the entire circumference of the chamber is used as the wall surface protecting member. This effectively suppresses the generation of particles.

In the plasma processing apparatus,
The plasma processing apparatus is characterized in that the wall surface protection member is fitted and supported in a groove provided in the support base.

  By fitting and supporting the wall surface protection member in a groove provided on the support base, the wall surface protection member can be easily installed or replaced, and the displacement of the installation position is suppressed. The groove provided in the support base has a shape that matches the shape of the portion where the wall surface protection member contacts the support base.

In the plasma processing apparatus,
The cylindrical wall surface protection member is supported by a support member provided on the support base,
The support member is a plasma processing apparatus that supports the outer peripheral surface of the cylindrical wall surface protection member by contact with a point or a line.

  Although the support member may be deformed by the heat of the wall surface protection member, the support state may be changed, and the position of the wall surface protection member may be shifted. To suppress deformation of the support member. Thereby, the thermal stress of the support member which acts on the wall surface protection member is relieved, or the displacement of the wall surface protection member is suppressed. “Support by contacting with a point or a line” means, for example, that the wall surface protection member is supported by the support table via a plurality of small protruding support members provided on the support table. A state where the support member is in contact with a small contact area. Further, the wall surface protection member is cylindrical, and the curved outer peripheral surface is supported by a straight bar-like support member (the contact point between the curved surface and the plane constituting the straight bar is a very small area such as a point or a line) Say what you are doing.

In the plasma processing apparatus,
The wall surface protecting member is a plasma processing apparatus supported on the support base by point or line contact.

  “Supported by point or line contact” means, for example, that the wall surface protection member is attached to the support base via a plurality of small protrusions provided on the upper surface of the support base or the contact surface with the support base of the wall surface protection member. It is installed, that is, it is installed in a state where the contact area between the wall surface protection member and the support base is small.

  By making the contact area between the wall surface protection member and the support base as small as possible (minimum area capable of supporting the wall surface protection member), heat transfer from the wall surface protection member whose temperature is controlled by the temperature control means is suppressed. Thereby, the temperature of the substrate is separately controlled without being influenced by the temperature of the wall surface protection member, or the temperature of the wall surface protection member is accurately controlled without being influenced by the temperature of the substrate.

In the plasma processing apparatus,
The temperature control means for controlling the temperature of the wall surface protection member is optimized so that the temperature difference between the maximum temperature portion and the minimum temperature portion of the wall surface protection member is a predetermined difference or less. A plasma processing apparatus is characterized.

  When controlling the temperature of the wall surface protection member, it is necessary to reduce the temperature unevenness (spots) of the wall surface protection member, so that a lot of products adhere to the location, and the part that reaches the maximum temperature is necessary to suppress this. Eliminates overheating. That is, the efficiency of temperature control is improved.

In the plasma processing apparatus,
The wall surface protecting member is a plasma processing apparatus characterized in that it has a structure that absorbs thermal deformation accompanying a temperature change.

In the plasma processing apparatus,
The structure for absorbing thermal deformation is a plasma processing apparatus characterized in that the wall surface protection member is composed of a thick part and a thin part.

  When the wall surface protection member is a member having a certain thickness, all portions are similarly thermally deformed, and there is a risk of damage when the material is quartz glass or the like. On the other hand, by changing the thickness, the thermal deformation generated in the thick part is absorbed in the thin part with relatively little deformation, thereby reducing the thermal stress as a whole. Eliminates damage caused by thermal deformation.

In the plasma processing apparatus,
The temperature control means is an electric heater,
The resistance value is calculated from the voltage applied to the electric heater and the current flowing through the electric heater, and the temperature of the wall protection member is estimated based on the relationship between the resistance value and temperature of the electric heater preliminarily converted into data. And
In the plasma processing apparatus, the temperature of the wall surface protection member is controlled.

  When performing temperature control, an expensive temperature sensor or the like is not required, and a simple configuration is achieved and the manufacturing cost of the apparatus is suppressed.

According to the plasma processing apparatus of the present invention,
A gas supply means for supplying a gas containing a reaction gas into the chamber;
Pressure control means for controlling the internal pressure of the chamber;
Plasma generating means for generating a plasma of the gas inside the chamber;
In the plasma processing apparatus having a support base installed below the chamber and supporting a substrate to be processed,
A wall surface protecting member that is provided inside the chamber and prevents the product of plasma treatment from adhering to the inner wall surface of the chamber;
Since the temperature control means for controlling the temperature of the wall surface protection member is provided,
By allowing the wall surface protection member to be contaminated instead, the product can be prevented from adhering and accumulating due to the plasma treatment on the inner wall surface of the chamber, and by removing the wall surface protection member from the chamber, the cleaning process can be performed. It can be made simple. In addition, by preparing a plurality of wall surface protection members, it is possible to eliminate the interruption of the processing process due to waiting for the cleaning process of the wall surface protection members, and to improve the production efficiency of the semiconductor device. Furthermore, by controlling the temperature of the wall surface protection member to a temperature at which the product does not adhere, particle adhesion itself can be suppressed.

In the plasma processing apparatus,
Since the wall surface protection member is made of quartz glass or ceramics,
The plasma resistance can be improved, the life can be extended, and a plasma processing apparatus of a type in which a coiled antenna wound around the outside of the side wall surface of the chamber is used as a plasma generating means can be used. Further, the weight of the member can be reduced, and the burden of replacement work can be reduced.

In the plasma processing apparatus,
Since the wall surface protection member is an inner cylinder that covers the inner wall surface above the support base in the chamber,
Since most of the particle sources are caused by products produced by plasma treatment that adhere to the inner wall surface of the chamber above the support base (substrate), the inner wall that covers the entire circumference of the chamber is used as the wall surface protection member. Thus, the generation of particles can be effectively suppressed.

In the plasma processing apparatus,
Since the wall surface protection member is fitted and supported in a groove provided in the support base,
The wall surface protection member can be easily installed or replaced, and the displacement of the installation position can be suppressed.

In the plasma processing apparatus,
The cylindrical wall surface protection member is supported by a support member provided on the support base,
Since the support member is to be supported by a point or line on the outer peripheral surface of the cylindrical wall surface protection member,
By adopting a point or line contact method as the support method, the heat conduction is suppressed to suppress the deformation of the support member, the thermal stress of the support member acting on the wall surface protection member is alleviated, or the wall surface protection member is displaced. Can be suppressed.

In the plasma processing apparatus,
Since the wall surface protection member is supported by the point or line contact on the support base,
By making the contact area between the wall surface protection member and the support base as small as possible (minimum area capable of supporting the wall surface protection member), it is possible to suppress heat transfer from the wall surface protection member temperature-controlled by the temperature control means. it can. Thereby, the temperature of the substrate can be separately controlled without being influenced by the temperature of the wall surface protection member, or the temperature of the wall surface protection member can be accurately controlled without being influenced by the temperature of the substrate.

In the plasma processing apparatus,
The temperature control means for controlling the temperature of the wall surface protection member is optimized so that the temperature difference between the maximum temperature portion and the minimum temperature portion of the wall surface protection member is a predetermined difference or less. So
When controlling the temperature of the wall surface protection member, it is necessary to reduce the temperature unevenness (spots) of the wall surface protection member, so that a lot of products adhere to the location, and the part that reaches the maximum temperature is necessary to suppress this. It is possible to eliminate heating up as described above. That is, the temperature control efficiency can be improved.

In the plasma processing apparatus,
Since the wall surface protection member has a structure that absorbs thermal deformation accompanying a temperature change,
The thermal stress acting on the wall surface protection member can be relaxed, and damage due to thermal deformation can be eliminated.

In the plasma processing apparatus,
Since the structure that absorbs the thermal deformation is composed of a thick part and a thin part of the wall surface protection member,
By changing the thickness, the thermal deformation that occurs in the thick part is absorbed by the thin part that has relatively little deformation. Can be eliminated.

In the plasma processing apparatus,
The temperature control means is an electric heater,
The resistance value is calculated from the voltage applied to the electric heater and the current flowing through the electric heater, and the temperature of the wall protection member is estimated based on the relationship between the resistance value and temperature of the electric heater preliminarily converted into data. And
Since it was decided to control the temperature of the wall surface protection member,
When performing temperature control, an expensive temperature sensor or the like is not required, and a simple configuration can be achieved and the manufacturing cost of the apparatus can be suppressed.

<First Embodiment>
DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be exemplarily described based on the drawings. FIG. 1 is a schematic perspective side sectional view of a thin film manufacturing apparatus according to a first embodiment of the present invention.

  As shown in the figure, a film forming chamber 2 is formed in a cylindrical vacuum chamber 1, and a circular ceiling plate 3 is provided on the upper portion of the vacuum chamber 1. At the center of the film forming chamber 2 is provided a support table 4 that supports the substrate 6. For example, the semiconductor substrate 6 is electrostatically attracted and held on the upper surface of the support table 4 by an electrostatic chuck or the like. Yes.

  For example, a spiral high frequency antenna 7 is disposed on the ceiling plate 3, and a high frequency power source 9 is connected to the high frequency antenna 7 via a matching unit 8. By supplying power to the high-frequency antenna 7, electromagnetic waves are incident on the film forming chamber 2 of the vacuum chamber 1 (plasma generating means).

  On the other hand, on the side wall surface of the vacuum chamber 1, a gas nozzle 14 serving as a gas supply unit is provided so that the gas 13 is introduced at a position lower than the ceiling plate 3 in the film forming chamber 2 and higher than the support 4. .

  The gas 13 introduced into the film forming chamber 2 is ionized by the electromagnetic wave incident on the film forming chamber 2 and enters a plasma state. The gas 13 is a gas containing an elemental component that becomes a material of the thin film 15, for example, a gas of an organometallic complex, and forms the thin film 15 by being adsorbed on the substrate 6 after being in a plasma state. For example, a metal thin film is formed from an organometallic complex gas, a boron nitride film is formed from a combination of ammonia gas and diborane gas, and various thin films 15 can be formed by changing the gas species.

  As detailed apparatus control, the inside of the film forming chamber 2 is adjusted to a predetermined pressure by a vacuum pump (not shown) as a pressure control means, and the gas 13 is introduced from the gas nozzle 14 at a predetermined flow rate. By applying high frequency power (1 MHz to 100 MHz, 1 kW to 10 kW) from the high frequency power source 9 to the high frequency antenna 7 via the matching unit 8, the gas 13 is excited in the film forming chamber 2 to be in a plasma state, and on the substrate 6. A thin film 15 is formed. At this time, the temperature of the substrate 6 is set to 200 ° C. to 450 ° C. by a heater (not shown) or the like.

  At this time, in order to prevent the thin film component from adhering to the inner wall surface of the vacuum chamber 1, in this embodiment, an inner cylinder 20 made of quartz glass that is a wall surface protecting member is provided. The inner cylinder 20 is a cylindrical member that covers the inner wall surface above the support 4 in the vacuum chamber 1, and can be inserted into the cylindrical vacuum chamber 1 and has a smaller diameter than the vacuum chamber 1. I am doing.

  The deposition of the thin film component on the inner wall of the chamber in the film forming process is particularly likely to occur at the height at which the gas 13 is supplied, that is, the height of the nozzle tip of the gas nozzle 14, and therefore the nozzle tip of the gas nozzle 14 on the inner wall surface of the vacuum chamber 1. The inner cylinder 20 is provided so as to sufficiently block the vicinity of the height.

  By providing the inner cylinder 20, the inner wall surface of the inner cylinder 20 is contaminated by the thin film component, so that the film forming process can be performed without contaminating the inner wall surface of the vacuum chamber 1. As a result, when the inside of the chamber is cleaned, the cleaning process is completed by removing the inner cylinder 20 from the vacuum chamber 1, which simplifies the cleaning process and produces a plurality of inner cylinders 20. It becomes possible to produce a thin film continuously without deteriorating the properties.

A heater 21 is provided around the outer periphery of the inner cylinder 20 as temperature control means for controlling the temperature of the inner cylinder 20.
In the film forming process, the inner cylinder 20 is heated to about 200 ° C. to 400 ° C. by the heater 21. As a result, an etching reaction does not easily occur on the wall surface of the inner cylinder 20, and the thin film component is difficult to adhere, and generation of particles that contaminate the substrate 6 can be suppressed.

  As a result of suppressing the generation of the particles themselves, the film thickness that can be formed at a time can be increased (conventionally about 1 μm, in this embodiment about 10 μm), and the thin film component adhering to the inner cylinder 20 can be cleaned. The frequency can be reduced.

  Furthermore, since the temperature of the inner cylinder 20 can be increased to about 200 ° C. to 400 ° C. by heating with the heater 21, cleaning processing by etching using plasma is performed in a state where the inner cylinder 20 is installed in the chamber. In this case, the etching rate, that is, the cleaning rate can be increased. This solves the problem that when the inner wall surface of the conventional vacuum chamber 1 is subjected to the cleaning process, the vacuum chamber 1 is not easily heated, so that heating with only plasma is not sufficient, and the cleaning speed is slow.

  As a method for controlling the temperature of the inner cylinder 20 by the heater 21, a resistance value is calculated from the voltage applied to the heater 21 and the current flowing through the heater 21, and the relationship between the resistance value and temperature of the heater 21 that has been converted into data in advance is calculated. Based on this, the temperature of the inner cylinder 20 may be estimated and the temperature of the inner cylinder 20 may be controlled.

  Hereinafter, the second to fifth embodiments will be described as modified examples of the first embodiment.

<Second Embodiment>
FIG. 2 is a schematic perspective side sectional view of a thin film production apparatus according to the second embodiment of the present invention. This embodiment is a modification of the first embodiment, and members having the same function are denoted by the same reference numerals, and redundant description is omitted.

  In the present embodiment, a coil-shaped high-frequency antenna 22 wound around the outer periphery of the vacuum chamber 1 is disposed as plasma generating means, and a high-frequency power source 9 is connected to the high-frequency antenna 22 via a matching unit 8. By supplying power to the high-frequency antenna 22, electromagnetic waves are incident on the film forming chamber 2 of the vacuum chamber 1.

  On the other hand, a gas nozzle 24 as a gas supply means is provided so that the gas 13 is introduced into a position lower than the ceiling plate 3 and higher than the support base 4 in the film forming chamber 2. The gas nozzle 24 is fixed below the side wall of the vacuum chamber 1 in order to increase the degree of freedom around the outside of the vacuum chamber 1 (in order to install the high-frequency antenna 22). The mouth is shaped so that it faces upward.

  Since the inner cylinder 20 is made of quartz glass or ceramics and transmits electromagnetic waves from the high-frequency antenna 22, the generation of the plasma 10 is not hindered by installing the inner cylinder 20.

<Third Embodiment>
FIG. 3 is a schematic perspective side sectional view of a thin film production apparatus according to the third embodiment of the present invention. This embodiment is a modification of the first embodiment, and members having the same function are denoted by the same reference numerals, and redundant description is omitted.

  In the present embodiment, as a method of installing the inner cylinder 20 in the vacuum chamber 1, the inner cylinder 20 is fitted into an installation groove 27 provided in the support base 26, thereby supporting the inner cylinder 20 by the support base 26. ing. The installation groove 27 is formed in a shape that matches the shape of the portion where the inner cylinder 20 contacts the support base 26. For example, for a circular inner cylinder, a circular groove is formed in the vicinity of the edge of the support base 26. Is formed.

  The inner cylinder 20 is supported by point contact in an installation groove 27 provided in the support base 26. That is, the circular bottom surface of the inner cylinder 20 is provided with protrusions protruding downward at several locations, while the inner bottom surface of the installation groove 27 is flat, so that the inner cylinder 20 has a very small contact within the installation groove 27. It is supported in contact with the area. Further, a protrusion may be provided on the installation groove 27 side, and the inner cylinder 20 side may be a flat lower surface. In addition, if the tip of the protrusion is a chevron or the like, line contact is established.

  In consideration of the weight of the inner cylinder 20, the number of protrusions may be more than the number that can be supported. In addition, from the viewpoint of the heat retained by the inner cylinder 20 described below, the smaller the number of protrusions, the better.

  As described above, since the inner cylinder 20 is supported by the protrusion on the support base 26, that is, by the point or line contact, the heat conducted from the inner cylinder 20 to the support base 26 is as follows. Conductive heat due to contact can be reduced, and the temperature of the inner cylinder 20 can be accurately controlled without being influenced by the control temperature of the inner cylinder 20 and separately controlling the temperature of the substrate 6 or without being affected by the temperature of the substrate 6. And can be controlled.

<Fourth Embodiment>
FIG. 4 is a diagram showing a method of supporting the inner cylinder in the thin film manufacturing apparatus according to the fourth embodiment of the present invention. This embodiment is a modification of the first embodiment, and members having the same function are denoted by the same reference numerals, and redundant description is omitted.

  In the present embodiment, as a method of installing the inner cylinder 20 in the vacuum chamber 1, the inner cylinder 20 is supported from four directions by a straight rod-shaped inner cylinder support member 28 provided on the support 4. While the side wall surface of the circular inner cylinder 20 is curved, the inner cylinder support member 28 has a straight bar shape, so that the contact area between the both becomes extremely small. As a result, the heat conduction from the inner cylinder 20 is suppressed to suppress the deformation of the inner cylinder support member 28, the thermal stress of the inner cylinder support member 28 acting on the inner cylinder 20 is alleviated, and the position shift of the inner cylinder 20 Can be suppressed.

  In order to obtain the above effect, the inner cylinder support member 28 only needs to be in contact with the outer peripheral surface of the inner cylinder 20 at a point (or in a state where the contact area such as a line is extremely small). It is not limited. Further, the inner cylinder 20 may be supported by the three inner cylinder support members 28.

<Fifth Embodiment>
FIG. 5 is a partial schematic external view of an inner cylinder in a thin film manufacturing apparatus according to a fifth embodiment of the present invention. This embodiment is a modification of the first embodiment, and members having the same function are denoted by the same reference numerals, and redundant description is omitted.

  In the present embodiment, a plurality of grooves 25 along the top and bottom are provided on the outer peripheral surface of the inner cylinder 20. That is, the inner cylinder 20 includes a portion other than the groove 25 that is a thick portion and a portion of the groove 25 that is a thin portion. This structure is a structure that absorbs thermal deformation of the inner cylinder 20 due to a temperature change when the temperature of the inner cylinder 20 is controlled, so that the thermal deformation generated in the thick part is relatively thin. By absorbing at a thin part of the film, thermal stress can be relieved as a whole, and damage due to thermal deformation can be eliminated.

  In addition, a heater 21 is provided on the outer peripheral surface of the inner cylinder 20. As a method of installing the heater 21, the temperature difference between the maximum temperature portion and the minimum temperature portion of the inner cylinder 20 is a predetermined difference. It is installed to be as follows. When the heater 21 is provided on the outer peripheral surface of the inner cylinder 20, the portion where the heater 21 is provided on the outer peripheral surface of the inner cylinder 20 and the vicinity thereof are sufficiently heated, but the heater 21 is provided on the outer peripheral surface of the inner cylinder 20. In the heater 21 provided in a zigzag shape as described with reference to FIG. 5, there is a possibility that the heating between the heater wires may be insufficient. Therefore, in the present embodiment, the temperature difference between the portion where the heater 21 is provided and the maximum temperature is provided and the portion where the heater 21 is not provided and the minimum temperature is provided is set to be a predetermined difference or less. Specifically, in this embodiment, the temperature difference is adjusted by adjusting the interval of the heater wiring. The predetermined temperature difference is preferably 5 to 20%, more preferably 5% or less, expressed as a ratio of (high temperature-low temperature) / high temperature.

  As a result, when the temperature of the inner cylinder 20 is controlled, the temperature irregularity (spots) of the inner cylinder 20 is reduced, and a lot of products are adhered depending on the location, or the maximum temperature is set to suppress this. The portion can be prevented from being heated more than necessary, and the efficiency of temperature control can be improved.

1 is a schematic perspective side sectional view of a thin film manufacturing apparatus according to a first embodiment. It is a schematic see-through | perspective side sectional view of the thin film preparation apparatus concerning 2nd Embodiment. It is a schematic see-through | perspective side sectional view of the thin film preparation apparatus concerning 3rd Embodiment. It is a figure which shows the support method of the inner cylinder in the thin film preparation apparatus which concerns on 4th Embodiment. It is a partial schematic external view of the inner cylinder in the thin film production apparatus concerning a 5th embodiment. It is a schematic perspective sectional side view of an example of the conventional thin film production apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Film-forming chamber 3 Ceiling board 4 Support stand 6 Substrate 7 High frequency antenna 8 Matching device 9 High frequency power supply 10 Plasma 13 Gas 14 Gas nozzle 15 Thin film 20 Inner cylinder 21 Heater 22 High frequency antenna 24 Gas nozzle 25 Groove 26 Support stand 27 Installation groove 28 Inner cylinder support member

Claims (10)

A gas supply means for supplying a gas containing a reaction gas into the chamber;
Pressure control means for controlling the internal pressure of the chamber;
Plasma generating means for generating a plasma of the gas inside the chamber;
In the plasma processing apparatus having a support base installed below the chamber and supporting a substrate to be processed,
A wall surface protecting member that is provided inside the chamber and prevents the product of plasma treatment from adhering to the inner wall surface of the chamber;
A plasma processing apparatus comprising temperature control means for controlling the temperature of the wall surface protection member. The plasma processing apparatus according to claim 1,
The plasma processing apparatus, wherein the wall surface protection member is made of quartz glass or ceramics. In the plasma processing apparatus according to claim 1 or 2,
The plasma processing apparatus, wherein the wall surface protection member is an inner cylinder covering an inner wall surface above the support base in the chamber. In the plasma processing apparatus according to any one of claims 1 to 3,
The plasma processing apparatus, wherein the wall surface protection member is fitted and supported in a groove provided in the support base. In the plasma processing apparatus according to claim 3,
The cylindrical wall surface protection member is supported by a support member provided on the support base,
The plasma processing apparatus is characterized in that the support member is in contact with and supported by a point or a line on the outer peripheral surface of the cylindrical wall surface protection member. In the plasma processing apparatus according to claim 4 or 5,
The plasma processing apparatus, wherein the wall surface protection member is supported on the support base by point or line contact. The plasma processing apparatus according to any one of claims 1 to 6,
The temperature control means for controlling the temperature of the wall surface protection member is optimized so that the temperature difference between the maximum temperature portion and the minimum temperature portion of the wall surface protection member is a predetermined difference or less. A plasma processing apparatus. The plasma processing apparatus according to any one of claims 1 to 7,
The plasma processing apparatus, wherein the wall surface protection member has a structure that absorbs thermal deformation accompanying a temperature change. The plasma processing apparatus according to claim 8, wherein
The plasma processing apparatus according to claim 1, wherein the structure that absorbs thermal deformation includes a thick portion and a thin portion of the wall surface protection member. The plasma processing apparatus according to any one of claims 1 to 9,
The temperature control means is an electric heater,
The resistance value is calculated from the voltage applied to the electric heater and the current flowing through the electric heater, and the temperature of the wall protection member is estimated based on the relationship between the resistance value and temperature of the electric heater preliminarily converted into data. And
A plasma processing apparatus that controls the temperature of the wall surface protection member.

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