TWI425112B - A substrate mounting mechanism, and a substrate processing device including the substrate mounting mechanism - Google Patents
A substrate mounting mechanism, and a substrate processing device including the substrate mounting mechanism Download PDFInfo
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- TWI425112B TWI425112B TW097120252A TW97120252A TWI425112B TW I425112 B TWI425112 B TW I425112B TW 097120252 A TW097120252 A TW 097120252A TW 97120252 A TW97120252 A TW 97120252A TW I425112 B TWI425112 B TW I425112B
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- substrate mounting
- substrate
- mounting mechanism
- heater body
- quartz
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- 239000000758 substrate Substances 0.000 title claims description 117
- 238000012545 processing Methods 0.000 title claims description 29
- 239000010453 quartz Substances 0.000 claims description 55
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 55
- 239000000919 ceramic Substances 0.000 claims description 42
- 230000007797 corrosion Effects 0.000 claims description 35
- 238000005260 corrosion Methods 0.000 claims description 35
- 238000010438 heat treatment Methods 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 19
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 22
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 10
- 230000006866 deterioration Effects 0.000 description 8
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000012459 cleaning agent Substances 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
- H05B1/0233—Industrial applications for semiconductors manufacturing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/145—Carbon only, e.g. carbon black, graphite
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/06—Heater elements structurally combined with coupling elements or holders
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Resistance Heating (AREA)
Description
本發明係關於，在薄膜形成裝置等之基板處理裝置中，具有在處理容器內載置半導體晶圓等之基板並予以加熱之發熱體的基板載置機構及具備該基板載置機構的基板處理裝置。According to the present invention, in a substrate processing apparatus such as a film forming apparatus, a substrate mounting mechanism including a heat generating body in which a substrate such as a semiconductor wafer is placed in a processing container and heated, and a substrate processing including the substrate mounting mechanism Device.
於半導體裝置之製造中，存在有對於被處理基板之半導體晶圓，施以CVD薄膜形成處理或如電漿蝕刻處理之真空處理的工程，於該處理時，需要將被處理基板之半導體晶圓加熱至特定的溫度，所以，使用兼為基板載置台之加熱器來加熱半導體晶圓。In the manufacture of a semiconductor device, there is a process of applying a CVD thin film forming process or a vacuum processing such as a plasma etching process to a semiconductor wafer of a substrate to be processed, in which a semiconductor wafer of a substrate to be processed is required. Since the temperature is heated to a specific temperature, the semiconductor wafer is heated by using a heater which is also a substrate mounting table.
作為此種加熱器，以往以來雖使用不銹鋼加熱器等，但是，近年來，由於前述處理所使用的鹵系氣體所導致的腐蝕不易產生，熱效率高的陶瓷加熱器被提出(專利文獻1等)。此種陶瓷加熱器，係具有於由作用為載置被處理基板的載置台之AlN等的緻密陶瓷燒結體所形成的基體的內部，埋設有由高熔點金屬所形成的發熱體之構造。In the past, stainless steel heaters and the like have been used as the heaters. However, in recent years, corrosion due to the halogen-based gas used in the above-described treatment is unlikely to occur, and ceramic heaters having high thermal efficiency have been proposed (Patent Document 1 and the like). . The ceramic heater has a structure in which a heat generating body made of a high melting point metal is embedded in a base body formed of a dense ceramic sintered body such as AlN which acts as a mounting table on which a substrate to be processed is placed.
於將由此種陶瓷加熱器所形成的基板載置台使用於基板處理裝置的情形時，係將陶瓷製的筒狀支撐構件的一端接合於基板載置台的背面，將另一端接合於腔體的底部。於此支撐構件的內部設置有供電給發熱體之供電線，於發熱體的端子連接此供電線，從設置於外部的電源介由此供 電線及供電端子來供電至發熱體。When a substrate mounting table formed of such a ceramic heater is used in a substrate processing apparatus, one end of a ceramic cylindrical supporting member is joined to the back surface of the substrate mounting table, and the other end is joined to the bottom of the cavity. . A power supply line for supplying power to the heating element is disposed inside the support member, and the power supply line is connected to the terminal of the heating element, and the power supply is provided from the outside. The wires and power terminals are used to supply power to the heating element.
[專利文獻1]日本專利特開平7-272834號公報[Patent Document 1] Japanese Patent Laid-Open No. Hei 7-272834
且說，由此種陶瓷加熱器所形成的基板載置台，於與支撐構件的接合部附近有供電端子，所以，在該部分，不得不使發熱體的密度降低。另外，與基板載置台的支撐構件的接合部，基於透過支撐構件之熱傳導，熱容易逃逸。因此，於基板載置台的接合部周邊產生冷點(與周邊相比，溫度低的區域)，於該部分會熱應力集中，特別是應力集中於彎曲部而導致破壞。In addition, since the substrate mounting table formed of such a ceramic heater has a power supply terminal in the vicinity of the joint portion with the support member, the density of the heat generating body has to be lowered in this portion. Further, the joint portion with the support member of the substrate stage is easily escaped by heat based on heat conduction through the support member. Therefore, a cold spot (a region having a lower temperature than the periphery) is generated around the joint portion of the substrate stage, and thermal stress is concentrated in this portion, and in particular, stress is concentrated on the bent portion to cause breakage.
為了防止此種破壞，經常使加熱器中心部的溫度比周邊部還高。但是，為了使加熱器中心部的溫度經常比周邊部還高，無法使溫度均勻性從某種程度向上提高。In order to prevent such damage, the temperature of the center portion of the heater is often made higher than the peripheral portion. However, in order to make the temperature of the center portion of the heater often higher than the peripheral portion, it is impossible to increase the temperature uniformity to some extent.
本發明之目的在於提供：可以進一步提升溫度均勻性之基板載置機構，及具備該基板載置機構的基板處理裝置。An object of the present invention is to provide a substrate mounting mechanism that can further improve temperature uniformity, and a substrate processing apparatus including the substrate mounting mechanism.
為了解決前述課題，關於本發明之第1型態的基板載置機構，係具備：埋設有發熱體之石英製加熱器本體；及被積載於前述石英製加熱器本體的被處理基板載置面上的耐蝕性陶瓷構件。In order to solve the above problems, the substrate mounting mechanism according to the first aspect of the present invention includes a quartz heater body in which a heating element is embedded, and a substrate mounting surface to be stacked on the quartz heater body. Corrosion resistant ceramic component.
另外，關於本發明之第2型態的基板載置機構，為具備：埋設有發熱體之石英製加熱器本體；及由與形成於前述石英製加熱器本體的被處理基板載置面上之藉由薄膜形成處理所蓄積的金屬同種的金屬所形成的金屬膜；及被積載於前述金屬膜上的耐蝕性陶瓷構件。Further, the substrate mounting mechanism according to the second aspect of the present invention includes a quartz heater body in which a heating element is embedded, and a substrate mounting surface formed on the ceramic heater body. a metal film formed of a metal of the same kind as the metal accumulated by the film formation treatment; and a corrosion-resistant ceramic member deposited on the metal film.
另外，關於本發明之第3型態的基板處理裝置，係具備：收容基板，且內部被減壓保持之處理容器；及設置於前述處理容器內之具有前述第1型態或第2型態所記載之構成的基板載置機構；及於前述處理容器內，對前述基板施以特定的處理之處理機構。Further, a substrate processing apparatus according to a third aspect of the present invention includes: a processing container that houses a substrate and is internally reduced in pressure; and a first type or a second type that is provided in the processing container. The substrate mounting mechanism of the configuration described above; and a processing mechanism for applying a specific treatment to the substrate in the processing container.
如依據本發明，可以提供：能進一步提升溫度均勻性之基板載置機構及具備該基板載置機構的基板處理裝置。According to the present invention, it is possible to provide a substrate mounting mechanism capable of further improving temperature uniformity and a substrate processing apparatus including the substrate mounting mechanism.
以下，參照所附圖面具體地說明本發明的一實施型態。Hereinafter, an embodiment of the present invention will be specifically described with reference to the drawings.
第1圖係表示關於本發明的一實施型態之基板載置機構的基板構成剖面圖。Fig. 1 is a cross-sectional view showing a substrate configuration of a substrate mounting mechanism according to an embodiment of the present invention.
關於一實施型態之基板載置機構，例如係被配置於薄膜形成裝置或蝕刻裝置等之基板處理裝置的處理容器內，且具有於該處理容器內載置半導體晶圓等之被處理基板，並且加熱被處理基板之發熱體者。The substrate mounting mechanism of the embodiment is disposed in a processing container of a substrate processing apparatus such as a thin film forming apparatus or an etching apparatus, and has a processed substrate such as a semiconductor wafer placed in the processing container. And heating the heating element of the substrate to be processed.
如第1圖所示般，基板載置機構100，係具備：埋設有發熱體102之石英製加熱器本體101；及被積載於石英製加熱器本體101的被處理基板載置面103上之耐蝕性陶瓷構件104。As shown in Fig. 1, the substrate mounting mechanism 100 includes a quartz heater body 101 in which the heating element 102 is embedded, and a substrate mounting surface 103 that is stacked on the ceramic heater body 101. Corrosion resistant ceramic member 104.
加熱器本體101雖未特別圖示出，但是，從上部方向來看，為圓形狀，於被處理基板載置面103的背面中央部具有具小R部(小彎曲面部)106的接合部105。於此接合部105例如接合有中空狀的石英製支撐構件107。於接合部105具備有供電端子108，此供電端子108的一端係於石英製加熱器本體內，介由供電線109而與發熱體102連接，其之另一端例如係介由被插穿石英製支撐構件107的中空部110之供電線111而與未圖示出的電源連接。發熱體102之一例細電阻發熱體。Though not shown in the figure, the heater main body 101 has a circular shape and has a joint portion 105 having a small R portion (small curved surface portion) 106 at the center portion of the back surface of the substrate mounting surface 103 to be processed. . For example, a hollow quartz support member 107 is joined to the joint portion 105. The connection portion 105 is provided with a power supply terminal 108. One end of the power supply terminal 108 is connected to the body of the quartz heater, and is connected to the heating element 102 via the power supply line 109. The other end of the power supply terminal 108 is inserted through the quartz, for example. The power supply line 111 of the hollow portion 110 of the support member 107 is connected to a power source (not shown). One of the heating elements 102 is a fine resistance heating element.
耐蝕性陶瓷構件104係被積載於石英製加熱器本體101的被處理基板載置面103上，例如藉由未圖示出的銷固定等之接合手段來與石英製加熱器本體101接合。耐蝕性陶瓷構件104係具有：接受來自發熱體102的熱，將熱更有效地傳達至未圖示出的被處理基板，例如半導體晶圓的目的；及保護石英製加熱器本體101的被處理基板載置面103之表面免於清潔劑，例如三氟化氯(ClF3 )的傷害之目的。由此等目的，耐蝕性陶瓷構件104之材料，係選擇對於清潔劑之耐蝕性比石英製加熱器本體101更好，且熱傳導率比石英製加熱器本體101更好的材料。作為該種材料之例子，例如可以舉氮化鋁(AlN)。The corrosion-resistant ceramic member 104 is placed on the substrate mounting surface 103 of the quartz heater body 101, and is bonded to the quartz heater body 101 by, for example, a bonding means such as pin fixing. The corrosion-resistant ceramic member 104 has a purpose of receiving heat from the heating element 102, more efficiently transferring heat to a substrate to be processed, such as a semiconductor wafer, and a treatment for protecting the quartz heater body 101. The surface of the substrate mounting surface 103 is protected from the purpose of cleaning agents such as chlorine trifluoride (ClF 3 ). For this purpose, the material of the corrosion-resistant ceramic member 104 is selected to be superior to the quartz heater body 101 in corrosion resistance to the cleaning agent, and the thermal conductivity is better than that of the quartz heater body 101. As an example of such a material, aluminum nitride (AlN) is mentioned, for example.
如依據第1圖所示之基板載置機構100，加熱器本體101為石英製。石英的熱膨脹率，係比陶瓷，例如氮化鋁小約1位數。一般而言，氮化鋁的熱膨脹率約5×10-6 /℃之程度，石英的熱膨脹率約0.5×10-6 /℃之程度。因此，石英製加熱器本體101與將加熱器本體做成陶瓷製，例如氮化鋁製的情形比較，可以使加熱時朝向加熱器中心所產生的拉伸應力變小。因此，可以抑制應力集中於第1圖所示之接合部105的周邊，例如形成於接合部105的周邊之小R部106，導致加熱器本體101被破壞之現象。According to the substrate mounting mechanism 100 shown in Fig. 1, the heater body 101 is made of quartz. The thermal expansion coefficient of quartz is about one digit smaller than that of ceramics such as aluminum nitride. In general, the thermal expansion coefficient of aluminum nitride is about 5 × 10 -6 / ° C, and the thermal expansion coefficient of quartz is about 0.5 × 10 -6 / ° C. Therefore, the quartz heater body 101 can reduce the tensile stress generated toward the center of the heater during heating as compared with the case where the heater body is made of ceramic, for example, aluminum nitride. Therefore, it is possible to suppress the stress from being concentrated on the periphery of the joint portion 105 shown in Fig. 1, for example, the small R portion 106 formed around the joint portion 105, causing the heater body 101 to be broken.
如此，關於一實施型態之基板載置機構100，可以使加熱時所產生的拉伸應力變小，比起加熱器本體為陶瓷製，例如氮化鋁製的基板載置機構，不用使加熱器中心部的溫度比周邊部還高。因此，與將加熱器本體做成由陶瓷製，例如氮化鋁製的基板載置機構比較，可以使被處理基板載置面103上中之溫度均勻性更為提升。As described above, in the substrate mounting mechanism 100 of one embodiment, the tensile stress generated during heating can be made small, and the substrate mounting mechanism such as aluminum nitride can be used without heating. The temperature at the center of the device is higher than the peripheral portion. Therefore, the temperature uniformity in the substrate mounting surface 103 to be processed can be further improved as compared with a substrate mounting mechanism made of ceramic, for example, aluminum nitride.
此種基板載置機構100，係對於石英製加熱器本體101具有小R部106，例如於被處理基板載置面103的背面中央部具有與支撐構件107的接合部105之基板載置機構有用。The substrate mounting mechanism 100 has a small R portion 106 for the quartz heater body 101, and is useful, for example, for a substrate mounting mechanism having a bonding portion 105 with the support member 107 at the center portion of the back surface of the substrate mounting surface 103 to be processed. .
另外，關於一實施型態之基板載置機構100，支撐構件107也是石英製，與支撐構件為陶瓷製，例如氮化鋁製之基板載置機構比較，支撐構件107也成為對於熱應力很強固之構造。Further, in the substrate mounting mechanism 100 of one embodiment, the support member 107 is also made of quartz, and the support member 107 is also strong against thermal stress as compared with the substrate mounting mechanism made of ceramic, for example, aluminum nitride. Construction.
進而，如依據關於一實施型態之基板載置機構100， 於石英製加熱器本體101的被處理基板載置面103上，例如積載對於清潔劑的耐蝕性比石英製加熱器本體101還優異的耐蝕性陶瓷構件104。藉由具備耐蝕性陶瓷構件104，與被處理基板載置面103為石英製的情形比較，例如對於清潔劑所導致的腐蝕更強固，可以抑制被處理基板載置面103上之溫度均勻性的時間劣化的進行，可以長期間維持優異的溫度均勻性。Further, according to the substrate mounting mechanism 100 according to an embodiment, On the substrate mounting surface 103 to be processed of the quartz heater body 101, for example, the corrosion-resistant ceramic member 104 which is superior in corrosion resistance to the cleaning agent to the heater body 101 of the quartz is stacked. By providing the corrosion-resistant ceramic member 104, compared with the case where the substrate-mounted surface 103 to be processed is made of quartz, for example, the corrosion by the cleaning agent is stronger, and the temperature uniformity on the substrate-mounted surface 103 to be processed can be suppressed. The progress of time deterioration can maintain excellent temperature uniformity for a long period of time.
而且，關於一實施型態之耐蝕性陶瓷構件104，藉由選擇熱傳導率比加熱器本體101更好的材料，與被處理基板載置面103為石英製之情形比較，熱分布更好，可以更為提升溫度均勻性。Further, in the corrosion-resistant ceramic member 104 of one embodiment, by selecting a material having a thermal conductivity higher than that of the heater body 101, the heat distribution is better than the case where the substrate-mounted surface 103 to be processed is made of quartz. Increase temperature uniformity.
如此，對於耐蝕性、及熱傳導率之雙方都優異之材料的例子，為氮化鋁。另外，耐蝕性陶瓷構件104如為氮化鋁製，由鹵系氣體所引起的腐蝕也不易產生。As described above, an example of a material excellent in both corrosion resistance and thermal conductivity is aluminum nitride. Further, if the corrosion-resistant ceramic member 104 is made of aluminum nitride, corrosion by a halogen-based gas is less likely to occur.
另外，耐蝕性陶瓷構件104如為氮化鋁製，雖擔心會有由熱應力所引起的“皸裂”，但是，關於此點，藉由使耐蝕性陶瓷構件104的厚度t變薄，與加熱器本體全部由氮化鋁製的情形比較，對於“皸裂”，可以成為強固的構造。為了使對於“皸裂”可以成為強固的構造之耐蝕性陶瓷構件104的合適厚度t的範圍，例如為2~6mm。Further, the corrosion-resistant ceramic member 104 is made of aluminum nitride, and there is a fear of "cracking" caused by thermal stress. However, in this regard, by making the thickness t of the corrosion-resistant ceramic member 104 thin, and heating The body of the device is all made of aluminum nitride, and it can be a strong structure for "cracking". The range of the suitable thickness t of the corrosion-resistant ceramic member 104 which can be a strong structure for "cracking" is, for example, 2 to 6 mm.
另外，於一實施型態中，雖表示了於石英製加熱器本體101埋設發熱體102的例子，但是此種基板載置機構100，例如也可以作為熱CVD裝置中的基板載置機構使用。In the embodiment, the example in which the heating element 102 is embedded in the quartz heater body 101 is shown. However, the substrate mounting mechanism 100 may be used as a substrate mounting mechanism in a thermal CVD apparatus, for example.
另外，也可以於石英製加熱器本體101與發熱體102一同地例如埋設電漿產生用的RF電極。如於石英製加熱器本體101埋設RF電極，可以作為電漿薄膜形成裝置，例如形成鈦(Ti)薄膜之電漿CVD裝置的基板載置機構使用。In addition, the quartz heater body 101 may be embedded with an RF electrode for plasma generation, for example, together with the heating element 102. For example, the RF electrode is embedded in the quartz heater body 101, and it can be used as a plasma film forming apparatus, for example, a substrate mounting mechanism for forming a plasma CVD apparatus of a titanium (Ti) film.
以下，作為具體的一實施例，與電漿CVD裝置一同地說明於石英製加熱器本體101埋設發熱體102及RF電極的例子。Hereinafter, as a specific example, an example in which the heating element 102 and the RF electrode are buried in the quartz heater body 101 will be described together with the plasma CVD apparatus.
第2圖係表示關於本發明的具體一實施例之基板處理裝置的一例之剖面圖，第3圖係第2圖所示之基板載置機構100a的放大剖面圖。Fig. 2 is a cross-sectional view showing an example of a substrate processing apparatus according to a specific embodiment of the present invention, and Fig. 3 is an enlarged cross-sectional view showing the substrate mounting mechanism 100a shown in Fig. 2.
本一例，係將關於前述一實施型態的基板載置機構使用於半導體裝置的製造所使用之電漿CVD裝置的基板載置機構。In this example, the substrate mounting mechanism of the above-described embodiment is used for a substrate mounting mechanism of a plasma CVD apparatus used in the manufacture of a semiconductor device.
如第2圖所示般，電漿CVD裝置200，係具有：氣密地構成之略圓筒狀的腔體2；及從腔體2的底壁2b突出下方而設置的排氣室3，藉由此等腔體2及排氣室3來構成一體式處理容器。於腔體2內設置有將被處理基板之半導體晶圓(以下，單單記為晶圓)基材W載置為水平狀態，且為了加熱之基板載置機構100a。於石英製加熱器本體101的外緣部設置有導引晶圓基材W之聚焦環6。此基板載置機構100a係如第3圖所示般，於參照第1圖說明過之基板載置機構100的石英製加熱器本體101進一步埋設RF電極112者。As shown in Fig. 2, the plasma CVD apparatus 200 includes a cavity 2 having a substantially cylindrical shape that is hermetically sealed, and an exhaust chamber 3 that is provided below the bottom wall 2b of the cavity 2 and is provided. The integrated processing container is constructed by the cavity 2 and the exhaust chamber 3 as well. A substrate mounting mechanism 100a for mounting a semiconductor wafer (hereinafter referred to as a wafer) substrate W on a substrate to be processed in a horizontal state and for heating is provided in the cavity 2. A focus ring 6 for guiding the wafer substrate W is provided on the outer edge portion of the quartz heater body 101. As shown in FIG. 3, the substrate mounting mechanism 100a is further embedded with the RF electrode 112 in the quartz heater body 101 of the substrate mounting mechanism 100 described with reference to FIG.
於腔體2的外側設置有供電至石英製加熱器本體101的發熱體102等之電源5，於電源5連接有控制器7，控制來自電源5之供電量以進行石英製加熱器本體101等之溫度控制。電漿CVD裝置200的各構成部，係成為連接於製程控制器60而被控制之構成。工程管理者為了管理電漿CVD裝置200，於製程控制器60連接有由進行指令的輸入操作等之鍵盤，或使電漿CVD裝置200的工作狀況成為可見化而顯示之顯示器等所形成的使用者介面61。A power source 5 such as a heating element 102 that supplies power to the quartz heater body 101 is provided outside the cavity 2, and a controller 7 is connected to the power source 5 to control the amount of power supplied from the power source 5 to perform the quartz heater body 101 and the like. Temperature control. Each component of the plasma CVD apparatus 200 is configured to be connected to the process controller 60 and controlled. In order to manage the plasma CVD apparatus 200, the process controller 60 is connected to the process controller 60 by a keyboard such as an input operation for instructing a command or the like, or a display for displaying the operation state of the plasma CVD apparatus 200. Interface 61.
另外，於製程控制器60連接有記憶部62，記憶有藉由製程控制器60的控制來實現於電漿CVD裝置200被執行之各種處理的控制程式，或因應處理條件，使電漿蝕刻裝置之各構成部執行處理之程式，即處理程序(recipe)。處理程序也可以記憶於硬碟或半導體記憶體，也可以收容在CDROM、DVD等之可攜性的記憶媒體的狀態下，來設定於記憶部62的特定位置。進而，也可以從其他裝置，例如介由專用線路來適當地傳送處理程序。In addition, the memory controller 62 is connected to the process controller 60, and a control program for realizing various processes performed by the plasma CVD device 200 by the control of the process controller 60 is stored, or the plasma etching device is caused in accordance with the processing conditions. Each of the components executes a processing program, that is, a recipe. The processing program may be stored in a hard disk or a semiconductor memory, or may be stored in a specific position of the memory unit 62 in a state of a portable memory medium such as a CDROM or a DVD. Further, the processing program may be appropriately transmitted from another device, for example, via a dedicated line.
而且，因應需要，以來自使用者介面61的指示等，從記憶部62呼叫出任意的處理程序，藉由於製程控制器60來執行，於製程控制器60的控制下，來進行於電漿CVD裝置200之所期望的處理。Further, if necessary, any processing procedure is called from the memory unit 62 by an instruction from the user interface 61, and is executed by the process controller 60 to perform plasma CVD under the control of the process controller 60. The desired processing of device 200.
於腔體2的上壁2a，介由絕緣構件9而設置有噴氣頭30，於噴氣頭30連接有氣體供給機構40。噴氣頭30係於上面具有氣體導入口31，於內部具有氣體擴散空間32，於下面形成有氣體吐出孔33。於氣體導入口31連接有從 氣體供給機構40延伸之氣體供給配管35，薄膜形成氣體係從氣體供給機構40被導入。A gas jet head 30 is provided through the insulating member 9 in the upper wall 2a of the cavity 2, and a gas supply mechanism 40 is connected to the air jet head 30. The air jet head 30 has a gas introduction port 31 on the upper surface, a gas diffusion space 32 therein, and a gas discharge hole 33 formed on the lower surface. Connected to the gas inlet port 31 The gas supply pipe 35 through which the gas supply mechanism 40 extends is introduced, and the thin film forming gas system is introduced from the gas supply mechanism 40.
進而，於噴氣頭30係介由匹配器37而連接有高頻電源36，高頻電力被供給至噴氣頭30。將介由噴氣頭30而被供給至腔體2內的薄膜形成氣體予以電漿化來進行薄膜形成處理。Further, the high-frequency power source 36 is connected to the air jet head 30 via the matching unit 37, and the high-frequency power is supplied to the air jet head 30. The film forming gas supplied into the cavity 2 via the air jet head 30 is plasma-formed to perform a film forming process.
前述排氣室3係以覆蓋形成於腔體2之底壁2b的中央部之圓形的孔4之形式，朝向下方突出，於其側面連接有排氣管51，於此排氣管51連接有排氣裝置52。而且，藉由使此排氣裝置52動作，可以將腔體2內減壓至特定的真空度。The exhaust chamber 3 is formed to cover a circular hole 4 formed in a central portion of the bottom wall 2b of the cavity 2, and protrudes downward, and an exhaust pipe 51 is connected to the side surface thereof, and the exhaust pipe 51 is connected thereto. There is a venting device 52. Further, by operating the exhaust device 52, the inside of the chamber 2 can be decompressed to a specific degree of vacuum.
於基板載置機構100a設置有對於被處理基板載置面103的表面可以突出沒入之支撐晶圓基材W使其升降的3根(只圖示出2根)的晶圓舉升銷53，此等晶圓舉升銷53係被固定於支撐板54。而且，晶圓舉升銷53係藉由氣壓缸等之驅動機構55而介由支撐板54被升降。The substrate mounting mechanism 100a is provided with three wafer lifting pins 53 (only two are shown) that support the wafer substrate W so as to protrude from the surface of the substrate mounting surface 103 to be processed. These wafer lift pins 53 are fixed to the support plate 54. Further, the wafer lift pin 53 is lifted and lowered by the support plate 54 by a drive mechanism 55 such as a pneumatic cylinder.
於腔體2的側壁設置有：在與被保持真空之未圖示出的搬運室之間，進行晶圓基材W的搬入出用之搬入出口56；及開關此搬入出口56之閘門閥57。The side wall of the cavity 2 is provided with a carry-in port 56 for carrying in and out of the wafer base material W between the transfer chamber (not shown) and a gate valve 57 for opening and closing the inlet 56. .
接著，參照第3圖之放大剖面圖來說明基板載置機構100a。另外，於此說明當中，對於與第1圖所示之基板載置機構100相同的部分，賦予相同參照符號，只說明不同的部分。Next, the substrate mounting mechanism 100a will be described with reference to an enlarged cross-sectional view of Fig. 3. In the above description, the same portions as those of the substrate mounting mechanism 100 shown in Fig. 1 are denoted by the same reference numerals, and only different portions will be described.
於石英製支撐構件107的中空部110內，設置有延伸 於垂直方向之供電桿15，其上端部係連接於供電端子108，下端部延伸於連接室20內，連接室20是以突出排氣室3的下方之方式被安裝於石英製支撐構件107的夏端。供電桿15係以Ni合金等之耐熱金屬材料所構成。In the hollow portion 110 of the quartz support member 107, an extension is provided. The power supply rod 15 in the vertical direction has an upper end portion connected to the power supply terminal 108, a lower end portion extending in the connection chamber 20, and the connection chamber 20 being attached to the quartz support member 107 so as to protrude below the exhaust chamber 3. Xia Duan. The power supply rod 15 is made of a heat resistant metal material such as a Ni alloy.
於石英製支撐構件107的底部，藉由安裝構件21a及螺絲21b而安裝有由成為凸緣狀的絕緣體所形成的底蓋21，於此底蓋21垂直設置有插穿有供電桿15之孔。另外，連接室20成為圓筒狀，於其上端形成有凸緣20a，此凸緣20a係藉由底蓋21及排氣室3的底壁而被夾持。凸緣20a與排氣室3之底壁之間，係藉由環狀密封構件23a而被氣密地密封，凸緣20a與底蓋21之間，係藉由2個環狀密封構件23b而被氣密地密封。而且，於連接室20內，供電桿15係被連接於從電源5延伸之供電線111。A bottom cover 21 formed of a flange-shaped insulator is attached to the bottom of the quartz support member 107 by a mounting member 21a and a screw 21b. The bottom cover 21 is vertically provided with a hole through which the power supply rod 15 is inserted. . Further, the connection chamber 20 has a cylindrical shape, and a flange 20a is formed at the upper end thereof, and the flange 20a is sandwiched by the bottom cover 21 and the bottom wall of the discharge chamber 3. The flange 20a and the bottom wall of the discharge chamber 3 are hermetically sealed by the annular sealing member 23a, and the flange 20a and the bottom cover 21 are separated by two annular sealing members 23b. It is hermetically sealed. Further, in the connection chamber 20, the power supply rod 15 is connected to the power supply line 111 extending from the power source 5.
進而，於關於具體之一實施例的基板載置機構100a中，於石英製加熱器本體101埋設有發熱體102及RF電極112。RF電極112在將第2圖所示之噴氣頭30當成一方電極時，係作用為一方電極的對向電極。於本例中，由於一方電極連接有高頻電源36，埋設於石英製加熱器本體101之RF電極112，係介由供電線109、供電端子108、及供電線111而被接地。Further, in the substrate mounting mechanism 100a according to a specific embodiment, the heating element 102 and the RF electrode 112 are embedded in the quartz heater body 101. When the RF head 112 is a single electrode shown in FIG. 2, it functions as a counter electrode of one electrode. In this example, the high-frequency power source 36 is connected to one of the electrodes, and the RF electrode 112 embedded in the quartz heater body 101 is grounded via the power supply line 109, the power supply terminal 108, and the power supply line 111.
如此，藉由將RF電極112埋設於石英製加熱器本體101，基板載置機構100a可以利用為利用電漿之基板處理裝置，例如電漿CVD裝置的基板載置機構。另外，穿設於石英製加熱器本體101之孔，係舉升銷所插穿之舉升銷 孔113。As described above, by embedding the RF electrode 112 in the quartz heater body 101, the substrate mounting mechanism 100a can be used as a substrate processing mechanism using a plasma substrate processing apparatus, for example, a plasma CVD apparatus. In addition, the hole is inserted through the quartz heater body 101, and the lift pin is inserted into the lift pin. Hole 113.
於如以上所構成之電漿CVD裝置200中，首先，藉由從電源5對埋設於石英製加熱器本體101之發熱體102供電，將被積載於被處理基板載置面103上之耐蝕性陶瓷構件104加熱至特定的溫度，藉由排氣裝置52將腔體2內排氣為真空狀態時，打開閘門閥57，從真空狀態之未圖示出的搬運室，介由搬入出口56而將晶圓基材W搬入腔體2內，於基板載置機構100a的耐蝕性陶瓷構件104上載置晶圓基材W1，關閉閘門閥57。在此狀態下，從高頻電源36供給高頻電力，而且，從氣體供給機構40介由氣體供給配管35而以特定流量對噴氣頭30供給薄膜形成氣體，藉由從噴氣頭30供給至腔體2內，於晶圓基材W1的表面使產生反應，來形成特定的薄膜。In the plasma CVD apparatus 200 configured as described above, first, the power supply to the heat generating body 102 embedded in the quartz heater main body 101 is supplied from the power source 5, and the corrosion resistance is accumulated on the substrate mounting surface 103 to be processed. When the ceramic member 104 is heated to a specific temperature and the inside of the chamber 2 is evacuated by the exhaust device 52, the gate valve 57 is opened, and the transfer chamber 56 is moved from the transfer chamber (not shown) in a vacuum state. The wafer base material W is carried into the cavity 2, and the wafer base material W1 is placed on the corrosion-resistant ceramic member 104 of the substrate mounting mechanism 100a, and the gate valve 57 is closed. In this state, the high-frequency power is supplied from the high-frequency power source 36, and the gas supply means 40 supplies the film forming gas to the air jet head 30 through the gas supply pipe 35 at a specific flow rate, and is supplied from the air jet head 30 to the cavity. In the body 2, a reaction is formed on the surface of the wafer substrate W1 to form a specific film.
進而，於關於具體之一實施例的基板載置機構100a中，於石英製加熱器本體101的被處理基板載置面103與耐蝕性陶瓷構件104之間，係存在有金屬膜114。藉由使金屬膜114存在於被處理基板載置面103與耐蝕性陶瓷構件104之間，可以進一步抑制溫度均勻性之時間劣化。關於此抑制情形，於以下做說明。Further, in the substrate mounting mechanism 100a according to the specific embodiment, the metal film 114 is present between the substrate mounting surface 103 of the quartz heater body 101 and the corrosion-resistant ceramic member 104. By causing the metal film 114 to exist between the substrate mounting surface 103 to be processed and the corrosion-resistant ceramic member 104, it is possible to further suppress temporal deterioration of temperature uniformity. Regarding this suppression situation, it is explained below.
第4(a)圖及第4(b)圖係個別為舉升銷113附近的放大圖。Figures 4(a) and 4(b) are enlarged views of the vicinity of the lift pin 113.
第4(a)圖係表示石英製加熱器本體101與耐蝕性陶瓷構件104之理想的層積狀態。於理想的層積狀態中，於石英製加熱器本體101的被處理基板載置面103與耐蝕性 陶瓷構件104之間，完全沒有間隙。但是，實際上，如第4 (b)圖所示般，於被處理基板載置面103與耐蝕性陶瓷構件104之間，存在有微間隙115。此微間隙115係成為加速溫度均勻性之時間劣化的一個原因。Fig. 4(a) shows an ideal laminated state of the quartz heater body 101 and the corrosion resistant ceramic member 104. In the ideal laminated state, the substrate mounting surface 103 of the quartz heater body 101 and the corrosion resistance There is no gap between the ceramic members 104 at all. However, actually, as shown in Fig. 4(b), a micro gap 115 exists between the substrate mounting surface 103 to be processed and the corrosion resistant ceramic member 104. This micro-gap 115 is one cause of deterioration in time for accelerating temperature uniformity.
第5 (a)圖至第5 (c)圖係個別表示被處理基板載置面103的時間劣化圖。The fifth (a)th to fifth (c) drawings show the time degradation diagram of the substrate mounting surface 103 to be processed.
第5 (a)圖係表示沒有進行薄膜形成處理之狀態。第5 (b)圖係進行了幾次薄膜形成處理之狀態，第5 (c)圖係表示更幾次進行薄膜形成處理的狀態。Fig. 5(a) shows a state in which the film formation treatment is not performed. The fifth (b) diagram shows a state in which the film formation treatment is performed several times, and the fifth (c) diagram shows a state in which the film formation treatment is performed several times.
如從第5 (a)圖至第5 (c)圖所示般，如重複薄膜形成處理，金屬116進入被處理基板載置面103與-4之間的微間隙115，而逐漸蓄積，其蓄積範圍逐漸擴大。如此，金屬116的蓄積範圍，經常不是定，每次重複薄膜形成處理時因而改變。金屬116序基於被處理基板載置面103與耐蝕性陶瓷構件104之間，且其蓄積範圍改變時，石英製加熱器本體101的散熱平衡改變，例如逐漸惡化。散熱平衡的惡化，會加速被處理基板載置面103上的溫度均勻性之時間劣化。As shown in the fifth (a)th to the fifth (c), if the thin film forming process is repeated, the metal 116 enters the micro-gap 115 between the substrate mounting faces 103 and -4, and gradually accumulates. The accumulation range has gradually expanded. As such, the accumulation range of the metal 116 is often not fixed, and thus changes each time the film formation process is repeated. When the metal 116 is based on the substrate mounting surface 103 to be treated and the corrosion-resistant ceramic member 104, and the storage range thereof changes, the heat dissipation balance of the quartz heater body 101 changes, for example, gradually deteriorates. The deterioration of the heat dissipation balance accelerates the deterioration of the temperature uniformity on the substrate mounting surface 103 to be processed.
特別是，金屬116之蓄積，被處理基板載置面103與耐蝕性陶瓷構件104的接合面，顯露於外界之處所成為蓄積起點。此種處所，係如第4圖所示般，例如可於舉升孔113處見到。In particular, the accumulation of the metal 116 causes the joint surface of the substrate mounting surface 103 to be treated and the corrosion-resistant ceramic member 104 to be exposed to the outside. Such a space, as shown in Fig. 4, can be seen, for example, at the lift hole 113.
為了抑制基於此種金屬116的蓄積所導致之溫度均勻性的劣化，具體之一實施例，係如第3圖所示般，於石英 製加熱器本體101與耐蝕性陶瓷構件104之間形成金屬膜114。此金屬膜114可以是與藉由薄膜形成處理所蓄積的金屬相同種類的金屬。例如在電漿CVD裝置200為鈦(Ti)及氮化鈦(TiN)薄膜形成用之情形時，蓄積的金屬為氮化鈦，所以，金屬膜114如為氮化鈦膜即可。In order to suppress deterioration of temperature uniformity caused by accumulation of such a metal 116, a specific embodiment is as shown in FIG. 3, in quartz A metal film 114 is formed between the heater body 101 and the corrosion resistant ceramic member 104. The metal film 114 may be the same kind of metal as the metal accumulated by the film forming process. For example, when the plasma CVD apparatus 200 is formed of a titanium (Ti) or titanium nitride (TiN) thin film, the accumulated metal is titanium nitride. Therefore, the metal film 114 may be a titanium nitride film.
如此，藉由事先於石英製加熱器本體101與耐蝕性陶瓷構件104之間形成由與藉由薄膜形成處理所蓄積的金屬相同種類的金屬所形成的金屬膜114，可以抑制基於金屬的蓄積所導致之散熱平衡的惡化，得以抑制被處理基板載置面103上之溫度均勻性的時間劣化。By forming the metal film 114 formed of the same kind of metal as the metal accumulated by the thin film forming process between the quartz heater body 101 and the corrosion-resistant ceramic member 104 in advance, it is possible to suppress the metal-based accumulation. The deterioration of the heat dissipation balance caused by the deterioration of the temperature uniformity on the substrate mounting surface 103 to be processed is suppressed.
以上，雖依據一實施型態及具體的一實施例來說明本發明，但是，本發明並不限定於前述一實施型態及一實施例，可以有種種變形之可能。The present invention has been described above on the basis of an embodiment and a specific embodiment. However, the present invention is not limited to the foregoing embodiment and an embodiment, and various modifications are possible.
例如，於前述一實施例中，雖說明將關於本發明之基板載置機構適用於電漿CVD裝置之例子，但是，也可以適用於加熱被處理機沾基板處理裝置，例如蝕刻裝置或熱處理裝置等。For example, in the above-described embodiment, an example in which the substrate mounting mechanism of the present invention is applied to a plasma CVD apparatus is described, but it is also applicable to a substrate to be processed by a substrate, such as an etching apparatus or a heat treatment apparatus. Wait.
另外，作為石英製加熱器本體的形狀，雖舉例表示被處理基板載置面的背面具有接合有石英製支撐構件之具有小R部的接合部者，但是，只要是存在有導致“皸裂”之容易成為破壞起點的部位者，都可以適用。In addition, the shape of the ceramic heater main body is exemplified as a joint portion having a small R portion to which a quartz support member is bonded to the back surface of the substrate mounting surface. However, as long as it is present, "cracking" is caused. It is easy to be a part of the starting point of destruction.
100、100a‧‧‧基板載置機構100, 100a‧‧‧ substrate mounting mechanism
101‧‧‧石英製加熱器本體101‧‧‧Quartz heater body
102‧‧‧發熱體102‧‧‧heating body
103‧‧‧被處理基板載置面103‧‧‧Processed substrate mounting surface
104‧‧‧耐蝕性陶瓷構件104‧‧‧Corrosion resistant ceramic components
105‧‧‧接合部105‧‧‧ joints
106‧‧‧小R部(小曲面部)106‧‧‧Small R (small curved surface)
107‧‧‧石英製支撐構件107‧‧‧Quartz support members
108‧‧‧供電端子108‧‧‧Power supply terminal
第1圖係表示本發明之一實施型態的基板載置機構的 一例之剖面圖。Fig. 1 is a view showing a substrate mounting mechanism according to an embodiment of the present invention. A cross-sectional view of an example.
第2圖係表示關於本發明之具體的一實施例之基板處理裝置的一例之剖面圖。Fig. 2 is a cross-sectional view showing an example of a substrate processing apparatus according to a specific embodiment of the present invention.
第3圖係第2圖所示之基板載置機構100a的放大剖面圖。Fig. 3 is an enlarged cross-sectional view showing the substrate mounting mechanism 100a shown in Fig. 2.
第4 (a)圖及(b)圖係個別為舉升銷附近的放大圖。Figures 4(a) and (b) are an enlarged view of the vicinity of the lift pin.
第5 (a)圖至(c)圖係個別表示被處理基板載置面的時間劣化圖。The fifth (a) to (c) drawings individually show the time degradation map of the substrate mounting surface to be processed.
100‧‧‧基板載置機構100‧‧‧Substrate mounting mechanism
101‧‧‧石英製加熱器本體101‧‧‧Quartz heater body
102‧‧‧發熱體102‧‧‧heating body
103‧‧‧被處理基板載置面103‧‧‧Processed substrate mounting surface
104‧‧‧耐蝕性陶瓷構件104‧‧‧Corrosion resistant ceramic components
105‧‧‧接合部105‧‧‧ joints
106‧‧‧小R部(小曲面部)106‧‧‧Small R (small curved surface)
107‧‧‧石英製支撐構件107‧‧‧Quartz support members
108‧‧‧供電端子108‧‧‧Power supply terminal
109‧‧‧供電線109‧‧‧Power supply line
110‧‧‧中空部110‧‧‧ Hollow
111‧‧‧供電線111‧‧‧Power supply line
Claims (7)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| JP2007147043A JP2008297615A (en) | 2007-06-01 | 2007-06-01 | Substrate mounting mechanism and substrate treatment apparatus equipped with the substrate mounting mechanism |
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| TW200916601A TW200916601A (en) | 2009-04-16 |
| TWI425112B true TWI425112B (en) | 2014-02-01 |
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| JP (1) | JP2008297615A (en) |
| KR (2) | KR20080106115A (en) |
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| JP5712054B2 (en) | 2011-05-31 | 2015-05-07 | 日本発條株式会社 | Heater unit with shaft and manufacturing method of heater unit with shaft |
| JP6463936B2 (en) * | 2014-10-01 | 2019-02-06 | 日本特殊陶業株式会社 | Manufacturing method of parts for semiconductor manufacturing equipment |
| US9633875B2 (en) * | 2015-03-13 | 2017-04-25 | Varian Semiconductor Equipment Associates, Inc. | Apparatus for improving temperature uniformity of a workpiece |
| JP7103340B2 (en) * | 2017-07-13 | 2022-07-20 | 住友電気工業株式会社 | Ceramic heater |
| JP7321285B2 (en) * | 2019-11-14 | 2023-08-04 | 京セラ株式会社 | Systems for ceramic structures and wafers |
| CN114679800A (en) * | 2020-12-24 | 2022-06-28 | 中国科学院微电子研究所 | Heater and heating system |
| WO2022264922A1 (en) * | 2021-06-15 | 2022-12-22 | 京セラ株式会社 | Plasma processing device member |
| CN114752758A (en) * | 2022-05-23 | 2022-07-15 | 江西睿锋环保有限公司 | Corrosion-resistant heating device for copper hydrometallurgy |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW548691B (en) * | 2001-02-08 | 2003-08-21 | Tokyo Electron Ltd | Substrate supporting table, method for manufacturing the same and processing apparatus |
| TW574406B (en) * | 2000-03-06 | 2004-02-01 | Anelva Corp | Method and apparatus for loading substrate in semiconductor manufacturing apparatus |
| JP2005330518A (en) * | 2004-05-19 | 2005-12-02 | Mitsubishi Heavy Ind Ltd | Plasma treatment device |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0834186B2 (en) * | 1988-09-29 | 1996-03-29 | 松下電器産業株式会社 | Microwave plasma film deposition equipment |
| JPH06260430A (en) * | 1993-03-08 | 1994-09-16 | Eiko:Kk | Plate heater and manufacture thereof |
| JPH08315965A (en) * | 1994-09-29 | 1996-11-29 | Tokyo Electron Ltd | Heating device, its manufacture, and treatment device |
| JPH09165681A (en) * | 1995-12-14 | 1997-06-24 | Ulvac Japan Ltd | Heater plate for vacuum deposition and its production |
| JP3554555B2 (en) * | 2001-02-09 | 2004-08-18 | 日本碍子株式会社 | Susceptor support structure |
| JP3534738B2 (en) * | 2002-03-28 | 2004-06-07 | 日本碍子株式会社 | Ceramic susceptor mounting structure, ceramic susceptor support structure, and ceramic susceptor support member |
| JP3887291B2 (en) * | 2002-09-24 | 2007-02-28 | 東京エレクトロン株式会社 | Substrate processing equipment |
| JP4380236B2 (en) * | 2003-06-23 | 2009-12-09 | 東京エレクトロン株式会社 | Mounting table and heat treatment device |
| JP4441356B2 (en) * | 2003-10-16 | 2010-03-31 | 東京エレクトロン株式会社 | Deposition equipment |
| US8197638B2 (en) * | 2004-03-26 | 2012-06-12 | Hitachi Kokusai Electric Inc. | Semiconductor manufacturing device and method for manufacturing semiconductor devices |
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2008
- 2008-05-30 TW TW097120252A patent/TWI425112B/en not_active IP Right Cessation
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW574406B (en) * | 2000-03-06 | 2004-02-01 | Anelva Corp | Method and apparatus for loading substrate in semiconductor manufacturing apparatus |
| TW548691B (en) * | 2001-02-08 | 2003-08-21 | Tokyo Electron Ltd | Substrate supporting table, method for manufacturing the same and processing apparatus |
| JP2005330518A (en) * | 2004-05-19 | 2005-12-02 | Mitsubishi Heavy Ind Ltd | Plasma treatment device |
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| CN101314846A (en) | 2008-12-03 |
| CN101314846B (en) | 2011-08-03 |
| JP2008297615A (en) | 2008-12-11 |
| KR20100010520A (en) | 2010-02-01 |
| KR20080106115A (en) | 2008-12-04 |
| TW200916601A (en) | 2009-04-16 |
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