CN101042989A - Plasma processing apparatus - Google Patents
Plasma processing apparatus Download PDFInfo
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- CN101042989A CN101042989A CNA2007100894254A CN200710089425A CN101042989A CN 101042989 A CN101042989 A CN 101042989A CN A2007100894254 A CNA2007100894254 A CN A2007100894254A CN 200710089425 A CN200710089425 A CN 200710089425A CN 101042989 A CN101042989 A CN 101042989A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
Abstract
The present invention provides a plasma processing apparatus which enables an insulating film on a grounding electrode to be removed. A plasma processing apparatus has a substrate processing chamber having therein a processing space in which plasma processing is carried out on a substrate, an RF electrode that applies radio frequency electrical power into the processing space, a DC electrode that applies a DC voltage into the processing space, and a grounding electrode that is exposed to the processing space. The grounding electrode and the RF electrode are adjacent to one another with an insulating portion therebetween, and a distance between the grounding electrode and the RF electrode is set in a range of 0 to 10 mm.
Description
Technical field
The present invention relates to a kind of plasma processing apparatus, and relate in particular to the plasma processing apparatus that contains the electrode that is connected in the DC power supply.
Background technology
The parallel plate type plasma processing apparatus is known, and it has: substrate processing chamber, this substrate processing chamber contain wafer transfer to wherein as the processing space of substrate; Be arranged in the substrate processing chamber and be connected in the lower electrode of radio-frequency power supply; And the upper electrode that is arranged to face lower electrode.In this plasma processing apparatus, to handle gas and be imported into in the processing space, radio frequency power is applied in the processing space between upper electrode and the lower electrode.Handle in the space and when being installed on the lower electrode, the processing gas of importing is transformed into plasma by radio frequency power so that produce ion etc. when wafer has been transferred to, and make wafer experience for example plasma treatment of etch processes by ion etc.
In recent years, in order to improve the performance of plasma treatment, developed that upper electrode is connected in the DC power supply so that dc voltage put on the plasma processing apparatus of handling in the space.Handle in the space for dc voltage is applied to, what must provide conductive surface to be exposed to handle the space is in earthy electrode (hereinafter being called " grounding electrode ").Yet, carry out under the situation of plasma treatment use forming sedimental processing gas, deposit may surface attached to grounding electrode on, thereby form deposited film thereon.And, depend on the type of handling gas, the surface of grounding electrode may be covered by oxidation film or nitride film.This deposited film, oxidation film or nitride film insulate, and therefore the DC electric current from upper electrode to grounding electrode is hindered, and make dc voltage not put on again and handle in the space.Therefore, be necessary to remove this deposited film or analog.
Traditionally, as the method for removing deposited film or analog from electrode surface, known have a kind of like this method, and it is with oxygen (O
2) import and to advance to handle in the space, from oxygen, produce oxonium ion and oxygen radical, so that by removing deposited film or analog (referring to Japanese unexamined patent disclosure (Kokai) for example S62-040728 number) with the reaction of oxonium ion and oxygen radical.
Method for above-mentioned removal deposited film or analog must be independent of the processing of the plasma treatment of wafer, and therefore the productivity ratio from the wafer manufacture semiconductor device descends.Therefore developed the method for removing deposited film or analog in the wafer plasma treatment procedure, the radio frequency power of especially that frequency is low relatively for example 2MHz transfers to the deposited film removal method of the indoor assembly of the processing substrate that comprises grounding electrode.In this deposited film removal method, on the surface of grounding electrode, produce the change current potential owing to the radio frequency power of 2MHz.At this moment, cation can be followed the change current potential of relative low frequency, so cation is attracted on the grounding electrode by the change current potential, makes the surface of grounding electrode by sputter.As a result, deposited film or analog are removed.
Yet in some cases, the radio frequency power of this relative low frequency can not be supplied in plasma treatment procedure, and for example, expectation only allows the situation of free radical contact wafer.Therefore in this case, the radio frequency power of relative high frequency is transferred to grounding electrode etc., but cation can not be followed the change current potential of this relative high frequency, and the potential difference of the change current potential that produces owing to the radio frequency power of relative high frequency is very little.Like this, cation is attracted on the grounding electrode with very low energy, so deposited film or analog can not be removed.
Summary of the invention
The purpose of this invention is to provide a kind of plasma processing apparatus that can remove the dielectric film on the grounding electrode.
In order to achieve the above object, in a first aspect of the present invention, provide a kind of plasma processing apparatus, it has: contain the substrate processing chamber of handling the space, handle in the space at this, substrate is carried out plasma treatment; Radio frequency power is applied to the RF electrode of handling in the space; Dc voltage is applied to the DC electrode of handling in the space; And the grounding electrode that is exposed to the processing space; Wherein grounding electrode and RF electrode are adjacent one another are, and are provided with insulation division between them, and grounding electrode and RF distance between electrodes are set in 0 to 10mm the scope.
According to top structure, the radio frequency power that is applied by the RF electrode is not only producing electric field in the part in the processing space of RF electrode, and produces the electric field with predetermined strength near the part in the processing space the RF electrode.And electric field almost disappears beyond distance R F electrode 10mm.As a result, in the part in the processing space of grounding electrode, producing electric field, so ion is because the potential difference of electric field and bumping with grounding electrode with predetermined strength.Therefore can remove the dielectric film on the grounding electrode.
Preferably, distance is set in 0 to 5mm the scope.
According to top structure, can therefore can remove the dielectric film on the grounding electrode reliably in the part in the processing space of grounding electrode, producing electric field reliably with predetermined strength.
Preferably, the following 0.5mm that is limited to of distance.
According to top structure, the following 0.5mm that is limited to of grounding electrode and RF distance between electrodes.As a result, have remaining surplus, can prevent from radio frequency power is put on grounding electrode.Therefore grounding electrode can be remained on earth potential, and thereby dc voltage can be put on reliably in the processing space.
Preferably, insulation division comprises insulator or vacuum space.
According to top structure, can prevent from reliably radio frequency power is put on grounding electrode.
In order to achieve the above object, in a second aspect of the present invention, provide a kind of plasma processing apparatus, it has: contain the substrate processing chamber of handling the space, handle in the space at this, substrate is carried out plasma treatment; The radio frequency power that only will be not less than preset frequency is applied to the RF electrode of handling in the space; Dc voltage is applied to the DC electrode of handling in the space; And the grounding electrode that is exposed to the processing space; Wherein grounding electrode and RF electrode are adjacent one another are, and are provided with insulation division between them.
According to top structure, the radio frequency power that only will be not less than preset frequency puts on to be handled in the space.Therefore as a result, ion can not easily be followed the change current potential that produces owing to radio frequency power, can not be by removing dielectric film on the grounding electrode because this change current potential is attracted to ion on the grounding electrode.Yet the radio frequency power that is applied by the RF electrode is not only producing electric field in the part in the processing space of RF electrode, and produces the electric field with predetermined strength near the part in the processing space the RF electrode.As a result, in the part in the processing space of grounding electrode, producing electric field, so ion is because the potential difference of electric field and bumping with grounding electrode with predetermined strength.Therefore can remove the dielectric film on the grounding electrode.
Preferably, preset frequency is 13MHz.
According to top structure, although ion is not followed the change current potential that produces owing to radio frequency power, but in the part in the processing space of grounding electrode, producing electric field, therefore can ion be attracted on the grounding electrode reliably by electric field with predetermined strength.
Preferably, insulation division comprises insulator or vacuum space.
From the description of carrying out below in conjunction with accompanying drawing, other features and advantages of the present invention will be conspicuous, and wherein in the accompanying drawings, similarly Reference numeral is represented same or analogous part all the time.
Description of drawings
Be included in the specification and constitute the accompanying drawing of the part of specification, show embodiments of the invention, and be used for explaining principle of the present invention with specification.
Fig. 1 is the sectional drawing of the structure of schematically illustrated plasma processing apparatus according to the first embodiment of the present invention;
Fig. 2 is the sectional drawing of the structure of schematically illustrated traditional plasma processing unit;
Fig. 3 only is illustrated in the 60MHz radio frequency power is supplied under the situation of upper electrode plate, and deposit adheres to the figure of the relation between the position on speed and the assembly;
Fig. 4 only is illustrated in the 60MHz radio frequency power is supplied under the situation of upper electrode plate, the figure of electric field strength and the relation between the position on the assembly by simulation calculation; And
Fig. 5 is the sectional drawing of the structure of schematically illustrated plasma processing apparatus according to a second embodiment of the present invention.
Embodiment
To be described in detail the preferred embodiments of the present invention with reference to the accompanying drawings below.
At first, with the plasma processing apparatus of describing according to first embodiment of the invention.
Fig. 1 is the sectional drawing of the structure of schematically illustrated plasma processing apparatus according to present embodiment.This plasma processing unit is formed at as carrying out RIE (active-ion-etch) on the semiconductor wafer W of substrate and handles.
As shown in fig. 1, plasma processing apparatus 10 has cylindrical base process chamber 11, has the processing space S in substrate processing chamber 11.And, be furnished with cylindrical base 12 (RF electrode) in the substrate processing chamber 11 as mounting table, settled diameter to be for example semiconductor wafer W of 300mm (hereinafter only being called " wafer W ") thereon.The inner wall surface of substrate processing chamber 11 is covered by side member 13.Side member 13 is made of aluminum, and it is covered with yittrium oxide (Y in the face of the surface of handling space S
2O
3).Processing substrate space 11 electrical ground, so side member 13 is in earth potential.And pedestal 12 has the conductor portion 29 made by the electric conducting material of for example aluminium and the pedestal side coating member 14 of the side of the covering conductor portion 29 made by insulating material.
In plasma processing apparatus 10, between the side of the inwall of substrate processing chamber 11 and pedestal 12, be formed with exhaust air flow channels 15, its gas molecule that serves as pedestal 12 tops is discharged from the flow channel of substrate processing chamber 11 by it.Dividing plate 16 along exhaust air flow channels 15 be arranged in transit in.
Thick pump drainage tracheae 19, main exhaust 20, DP and TMP constitute exhaust apparatus together.Thick pump drainage tracheae 19 and main exhaust 20 are discharged via manifold 18 gas in the reative cell 17 from substrate processing chamber 11.Particularly, thick pump drainage tracheae 19 is reduced to low vacuum state with the pressure in the substrate processing chamber 11 from atmospheric pressure, main exhaust 20 and thick pump drainage tracheae 19 collaborative works are (for example to be reduced to high vacuum state with the pressure in the substrate processing chamber 11 from atmospheric pressure, be no more than the pressure of 133Pa (1Torr)), its pressure is lower than low vacuum state.
Radio-frequency power supply 21 is connected in the conductor portion 29 of pedestal 12 via adaptation 22.Radio-frequency power supply 21 is supplied for example radio frequency power of the relative high frequency rate of 40MHz to conductor portion 29.Therefore the conductor portion 29 of pedestal 12 serves as the RF electrode.Adaptation 22 can reduce from the reflection of the radio frequency power of conductor portion 29 so that make radio frequency power be fed to maximizing efficiency in the conductor portion 29.Pedestal 12 will put on from the radio frequency power of the 40MHz of radio-frequency power supply 21 supply and handle the space S.
In the RIE processing procedure, on the expose portion of surperficial upper and lower described silicon electrode 27 of pedestal side coating member 14, may form dielectric film, such as deposited film, oxidation film or nitride film.At this moment, owing to be supplied to the radio frequency power of the 40MHz of conductor portion 29, and on the surface of pedestal side coating member 14, produced radio frequency (40MHz) change current potential.Yet cation can not be followed the potential difference with the 40MHz change, and therefore the potential difference that produces owing to the 40MHz radio frequency power is very little, and is like this, very low with the cationic energy of pedestal side coating member 14 collisions.Therefore can not remove the dielectric film that on the surface of pedestal side coating member 14, forms by the change current potential of 40MHz.
Be provided with the plate-like electrostatic chuck 24 that contains battery lead plate 23 on the top of pedestal 12.When wafer W being placed on the pedestal 12, wafer W is disposed on the electrostatic chuck 24.DC power supply 25 is electrically connected on battery lead plate 23.Bearing after dc voltage puts on battery lead plate 23, just on the back side of wafer W, produced positive potential.Between the back side of battery lead plate 23 and wafer W, therefore produced potential difference, so Coulomb force or Johnsen-Rahbek power by producing owing to potential difference, wafer W is adsorbed to and is maintained on the upper surface of electrostatic chuck 24.
Be provided with ring-type focusing ring 26 so that around the wafer W that is adsorbed to and remains on the upper surface of pedestal 12 on the top of pedestal 12.Focusing ring 26 is by silicon (Si) or silicon dioxide (SiO
2) make.Focusing ring 26 is exposed to the processing space S, and the plasma that will handle in the space S assembles towards the front surface of wafer W, thereby improves the efficient that RIE handles.And, be supplied to the 40MHz radio frequency power of conductor portion 29 to be transferred to focusing ring 26 via electrostatic chuck 24.At this moment, focusing ring 26 puts on the 40MHz radio frequency power and handles in the space S.Therefore focusing ring 26 also serves as the RF electrode.
The ring-type silicon electrode of being made by silicon 27 is adjacent to arrange around focusing ring 26 with focusing ring 26.Silicon electrode 27 has the expose portion that is exposed to the processing space S, and is electrical ground, therefore serves as grounding electrode.And silicon electrode 27 constitutes because upper electrode plate 39 described below puts on the part of the DC path of current that the dc voltage in the processing space S produces.
Between focusing ring 26 and silicon electrode 27, be furnished with the ying-shaped insulator ring of making by for example insulating material of quartzy (Qz) 28 (insulation division).And pedestal side coating member 14 is configured between the conductor portion 29 of silicon electrode 27 and pedestal 12.Therefore silicon electrode 27 is electric insulations with conductor portion 29 and focusing ring 26, and insulator ring 28 and pedestal side coating member 14 prevent to be supplied to the radio frequency power of conductor portion 29 and focusing ring 26 to put on silicon electrode 27 reliably.
And the ring-type bezel ring, 30 of the side of the protection silicon electrode of being made by quartz 27 is around silicon electrode 27 and arrange.
For example in pedestal 12, be provided with the ring-type coolant room 31 of extending along the circumferencial direction of pedestal 12.The cooling agent of predetermined temperature (for example cooling water or Galden (registered trade mark) liquid) circulates by coolant room 31 via ooling channel 32 from (unshowned) chiller unit.The treatment temperature that is adsorbed to and remains on the wafer W on the upper surface of pedestal 12 is Be Controlled by the temperature of cooling agent.
In the part of adsorbing and keep pedestal 12 upper surfaces of wafer W (hereinafter being called " attracting the surface "), be provided with a plurality of heat-conducting gas supply holes 33.Heat-conducting gas supply hole 33 is connected in (unshowned) heat-conducting gas feed unit by the heat-conducting gas supply pipeline 34 that is arranged in pedestal 12 inside.The heat-conducting gas feed unit will be fed in the attraction surface and the gap between the wafer W back side of pedestal 12 via heat-conducting gas supply hole 33 as helium (He) gas of heat-conducting gas.
Being provided with a plurality of push rod pins (pusher pin) 35 conducts in the attraction surface of pedestal 12 can be from the outstanding jacking pin (lifting pin) of the upper surface of pedestal 12.Push rod pin 35 is connected in (unshowned) motor by (unshowned) ball screw, and the rotatablely moving of motor that can be by being transformed into linear movement by ball screw, and makes its attraction surface from pedestal 12 outstanding.When wafer W is adsorbed to and remains on the attraction surface of pedestal 12, push rod pin 35 is housed in the pedestal 12, making wafer W can experience RIE handles, when living through RIE, wafer W will push rod pin be given prominence to from the upper surface of pedestal 12 leave pedestal 12 when substrate processing chamber 11 transfers be shifted out after handling so that mention wafer W.
Gas imports shower nozzle 36 and is disposed in the top plate portion of substrate processing chamber 11 so that towards pedestal 12.Gas imports that shower nozzle 36 has the battery lead plate supporter 38 that wherein is formed with surge chamber 37 made by insulating material and from the supported upper electrode plate 39 of battery lead plate supporter 38.The lower surface of upper electrode plate 39 is exposed to the processing space S.Upper electrode plate 39 is disk shaped parts of being made by the electric conducting material of for example silicon.The ring shielding ring 40 that the outer peripheral portion of upper electrode plate 39 is made by insulating material covers.Therefore battery lead plate supporter 38 and shading ring 40 are with upper electrode plate 39 and the wall electric insulation that is in earthy substrate processing chamber 11.
Handle processing gas introduction tube 42 that the gas feed unit draws from (unshowned) and be connected in surge chamber 37 the battery lead plate supporter 38.And gas imports to have in the shower nozzle 36 and makes surge chamber 37 and handle a plurality of pores 43 that space S is communicated with.Be supplied to processing gas the surge chamber 37 from handling gas introduction tube 42, import shower nozzle 36 by gas and be fed to via pore 43 and handle in the space S.
In the sidewall of substrate processing chamber 11, the position of the height that has been raised up by push rod pin 35 from pedestal 12 in wafer W is provided with the delivery port 44 that is used for wafer W.In delivery port 44, be provided with the gate valve 45 that is used to open and close delivery port 44.
In the substrate processing chamber 11 of plasma processing apparatus 10, the conductor portion 29 of pedestal 12 puts on radio frequency power and handles in the space S, it is the space between aforesaid pedestal 12 and the upper electrode plate 39, make the processing gas that is fed to the processing space S from gas importing shower nozzle 36 be transformed into highdensity plasma whereby, produced cation and free radical like this.And, dc voltage is applied to the upper electrode plate of handling in the space S 39 makes plasma remain on required state.By cation and free radical, wafer W experience RIE handles.
Before the present invention, for traditional plasma processing unit 46 as described below, the inventor has observed and only the radio frequency power of relative high frequency has been supplied under the situation of RF electrode the state that deposit adheres in the substrate processing chamber 11.
Fig. 2 is the sectional drawing of the structure of schematically illustrated traditional plasma processing unit.Traditional plasma processing apparatus has structure and the operation substantially the same with above-mentioned plasma processing apparatus 10, with plasma processing apparatus 10 only differences be that radio frequency power is supplied to upper electrode plate 39, and lack insulator ring 28 and silicon electrode 27.Therefore will no longer describe with the feature of plasma processing apparatus 10 identical construction and operation, only describe the structure different and the feature of operation below with plasma processing apparatus 10.
As shown in Figure 2, plasma processing apparatus 46 has the radio-frequency power supply 47 that is connected in upper electrode plate 39 via adaptation 49.Therefore upper electrode plate 39 puts on radio frequency power and handles in the space S.And, the ring-type bezel ring, of making by quartz 48 on the pedestal 12 focusing ring 26 and arrange so that adjacent with focusing ring 26.Focusing ring 26 and bezel ring, 48 directly are in contact with one another.
For plasma processing apparatus 46, the inventor has measured and has supplied 60MHz radio frequency power to upper electrode plate 39 with 2200W from radio-frequency power supply 47, and not from radio-frequency power supply 21 under the situation of the conductor portion 29 radiofrequency supplier electric power of pedestal 12, near the upper electrode plate 39 deposits adhere to speed (deposition rate), especially in the speed of adhering at the part place of shading ring 40 and the side member 13 adjacent with shading ring 40.At this moment, for plasma processing apparatus 46, the pressure of handling in the space S is configured to 2.67Pa (20mTorr), C
4F
8Gas and Ar gas are provided to be handled in the space S, and its flow velocity is arranged to 14sccm and 700sccm respectively, and plasma is produced.RIE handles and continues 5 minutes.
Fig. 3 is illustrated in to upper electrode plate only to supply under the situation of 60MHz radio frequency power the figure of the relation between the position on deposition rate and the assembly.In this figure, transverse axis shows with respect to the relative position on each assembly of upper electrode plate 39, and move on the right side of past more figure, just the closer to upper electrode plate 39.
Shown in the figure among Fig. 3, can find that for side member 13, deposition rate is positive, deposit little by little is attached on the side member 13, and for shading ring 40, deposition rate is born, deposited film little by little is removed from shading ring 40.
For plasma processing apparatus 46, the radio frequency power of for example 2MHz of the frequency that can be followed by ion is not provided to the conductor portion 29 of upper electrode plate 39 or pedestal 12, and shading ring 40 is made by insulating material.As a result, on the surface of shading ring 40, do not produce the change current potential, therefore can not be by attract the ion remaval deposited film of (sputter) owing to this change current potential.
Next, in order to investigate deposited film removed mechanism from the shading ring 40, the inventor is by emulation, calculated under the situation of upper electrode plate 39 supply 60MHz radio frequency power, towards the electric field strength at the part place of the processing space S of shading ring 40 and side member 13.Below, the electric field of partly locating in these subtends of handling space S will abbreviate " subtend electric field " as.
Fig. 4 is illustrated in to upper electrode plate only to supply under the situation of 60MHz radio frequency power, the figure of electric field strength and the relation between the position on the assembly by simulation calculation.Equally, in this figure, transverse axis shows with respect to the relative position on each assembly of upper electrode plate 39, and move on the right side of past more figure, just the closer to upper electrode plate 39.And the longitudinal axis shows intensity, and the intensity of getting the subtend electric field of upper electrode plate 39 peripheral part offices is " 1 ".
Shown in the figure among Fig. 4, can find to be essentially 0 in the intensity of the subtend electric field at side member 13 places adjacent with shading ring 40, and the intensity with the upper electrode plate 39 subtend electric field in the regional extent of 10mm of shading ring 40 surpassed upper electrode plate 39 peripheral part offices the subtend electric field intensity 20%, especially, the intensity with the upper electrode plate 39 subtend electric field in the regional extent of 5mm of shading ring 40 surpassed upper electrode plate 39 peripheral part offices the subtend electric field intensity 40%.And, for shading ring 40 surpass the zone of 10mm from upper electrode plate 39, the subtend electric field almost disappears.
From the result of top emulation, the inventor has obtained about remove the following understanding of the mechanism of deposited film from shading ring 40.
That is, upper electrode plate 39 has applied the 60MHz radio frequency power in handling space S after, produced subtend electric field towards upper electrode plate 39; Radio frequency power is not only producing the subtend electric field in the part of the processing space S of upper electrode plate 39, and near the part of the processing space S the upper electrode plate 39 part of shading ring 40 (that is, towards), produced specific surface and wanted more weak subtend electric field (electric field leakage effect) to the subtend electric field of upper electrode plate 39.Therefore have with ion and shading ring 40 and bump towards the corresponding energy of potential difference of the subtend electric field of shading ring 40, thus by with the collision of ion with deposited film from shading ring 40 removals.
In the present embodiment, in order to remove the dielectric film that forms on the expose portion that is in earthy silicon electrode 27, use electric field leakage effect recited above.Specifically, silicon electrode 27 and the distance between the focusing ring 26 of its transmission 40MHz radio frequency power are set in 0.5 to 10mm the scope, are preferably in 0.5 to 5mm the scope.In the case, owing to be applied to the electric field leakage effect of handling the 40MHz radio frequency power in the space S by focusing ring 26, producing specific surface some subtend electric field a little less than the subtend electric field of focusing ring 26 in the part of the processing space S of silicon electrode 27, particularly is that intensity surpasses 20% electric field towards the subtend electric field strength of focusing ring 26 outer peripheral portions.Therefore have with ion and silicon electrode 27 and bump towards the corresponding energy of potential difference of the subtend electric field of silicon electrode 27, thus by with the collision of ion with dielectric film from silicon electrode 27 removals.Note, be arranged to distance from focusing ring 26 under the situation within the 0.5mm, insulator ring 28 is not arranged between silicon electrode 27 and the focusing ring 26, but between silicon electrode 27 and focusing ring 26, forms vacuum space (space capacitor) at silicon electrode 27.As long as it shall yet further be noted that and can insulate, the distance between silicon electrode 27 and the focusing ring 26 in theory even can be 0mm.
According to plasma processing apparatus 10, silicon electrode 27 (it is the grounding electrode with the expose portion that is exposed to the processing space that has wherein applied dc voltage) is adjacent with focusing ring 26 (it applies the 40MHz radio frequency power in handling space S), the insulator ring 28 of insulation is between them, distance between silicon electrode 27 and the focusing ring 26 is set in 0.5 to 10mm the scope, is preferably in 0.5 to 5mm the scope.Ion can not followed the change current potential that produces owing to the 40MHz radio frequency power, so the dielectric film on the silicon electrode 27 can not be removed by the ion that is attracted on it owing to this change current potential.Yet, in the part of the processing space S of silicon electrode 27, has produced intensity and surpassed 20% electric field, so ion is because the potential difference of this electric field and bumping with silicon electrode 27 towards the subtend electric field strength of focusing ring 26 outer peripheral portions.As a result, can in plasma processing apparatus 10, remove dielectric film on the silicon electrode 27.That is, do not need the radio frequency power of frequency (promptly being no more than 3MHz) from ion to conductor portion 29 supply that can follow by, just can remove the dielectric film on the silicon electrode 27.
In plasma processing apparatus 10, insulator ring 28 is made by quartz, therefore can prevent from reliably radio frequency power is put on silicon electrode 27.As a result, can make silicon electrode 27 remain on earth potential, so dc voltage can put in the processing space S reliably.Can between focusing ring 26 and silicon electrode 27, the vacuum space be set, and insulator ring 28 be arranged between focusing ring 26 and the silicon electrode 27.In this case, can prevent from reliably equally radio frequency power is put on silicon electrode 27.
In plasma processing apparatus 10, the frequency of radio frequency power that is supplied to the conductor portion 29 (with focusing ring 26) of pedestal 12 is 40MHz.Yet this frequency can be any frequency that is not less than 13MHz.In this case, although ion can not be followed owing to frequency is not less than the change current potential that the radio frequency power of 13MHz produces, but because the electric field leakage effect in the part of the processing space S of silicon electrode 27, can produce the subtend electric field once more, therefore can ion be attracted on the silicon electrode 27 reliably by this electric field.
And in plasma processing apparatus 10, only radio-frequency power supply 21 is connected in the conductor portion 29 of pedestal 12.Yet a plurality of radio-frequency power supplies can be connected in conductor portion 29.If the radio frequency power of the frequency (promptly being no more than 3MHz) that one of radio-frequency power supply supply can be followed by ion, then ion will be not only owing to bump with silicon electrode 27 by the subtend electric field of electric field leakage effect generation, also can be attracted on the silicon electrode 27 owing to the change current potential of the frequency that can follow by ion, therefore, can remove dielectric film on the silicon electrode 27 more reliably.
Next, with the plasma processing apparatus of describing according to second embodiment of the invention.
For present embodiment, structure and operation are substantially the same with first embodiment recited above, be with only difference of first embodiment, radio frequency power is provided to upper electrode plate, be in earthy silicon electrode and be disposed near the upper electrode plate, and insulator ring and silicon electrode are not arranged around focusing ring.Therefore will no longer describe with the first embodiment identical construction and operation, only describe the structure different and the feature of operation below with first embodiment.
Fig. 5 is the sectional drawing of the structure of schematically illustrated plasma processing apparatus according to present embodiment.
As shown in Figure 5, plasma processing apparatus 50 has the radio-frequency power supply 52 that is connected in upper electrode plate 39 via adaptation 51.Radio-frequency power supply 52 is to the radio frequency power of for example 60MHz of upper electrode plate 39 supply relative high frequency.Therefore upper electrode plate 39 serves as the RF electrode, applies the radio frequency power of 60MHz in handling space S.And upper electrode plate 39 also is electrically connected on DC power supply 41, therefore dc voltage is put on and handles in the space S.
The ring-type silicon electrode of being made by silicon 53 is adjacent to arrange around upper electrode plate 39 with upper electrode plate 39.Silicon electrode 53 has the expose portion that is exposed to the processing space S, and electrical ground, therefore serves as grounding electrode.And silicon electrode 53 constitutes the part of the DC path of current that produces owing to the dc voltage that puts on by upper electrode plate 39 in the processing space S.
Ring shielding ring 54 (insulation division) by for example insulating material of quartzy (Qz) is made is disposed between upper electrode plate 39 and the silicon electrode 53.So silicon electrode 53 and upper electrode plate 39 electric insulations, shading ring 54 prevents that reliably the radio frequency power that will be supplied to upper electrode plate 39 from putting on silicon electrode 53.
In plasma processing apparatus 50, radio-frequency power supply 21 is to the radio frequency power of for example 2MHz of the relative low frequency of conductor portion 29 supplies of pedestal 12.And, the ring-type bezel ring, of making by quartz 48 on the pedestal 12 focusing ring 26 and arrange so that adjacent with focusing ring 26.Focusing ring 26 and bezel ring, 48 directly are in contact with one another.
In plasma processing apparatus 50, the distance between silicon electrode 53 and the upper electrode plate 39 is set in 0.5 to 10mm the scope, is preferably in 0.5 to 5mm the scope.In this case, owing to put on the electric field leakage effect of handling the 60MHz radio frequency power in the space S, in the part of the processing space S of silicon electrode 53, producing specific surface some subtend electric field a little less than the subtend electric field of upper electrode plate 39 by upper electrode plate 39.Have with ion and therefore bump with silicon electrode 53 towards the corresponding energy of potential difference of the subtend electric field of silicon electrode 53, thus can be by dielectric film being removed from silicon electrode 53 with the collision of ion.And the 2MHz radio frequency power transfers to silicon electrode 53 from the conductor portion 29 of pedestal 12, has therefore produced the change current potential with the 2MHz change on the expose portion of silicon electrode 53.Ion is attracted on the silicon electrode 53 by the change current potential, therefore can reliably dielectric film be removed from silicon electrode 53 in plasma processing apparatus 50.
In above-mentioned plasma processing apparatus 50, radio-frequency power supply 21 is to the radio frequency power of the conductor portion 29 supply 2MHz of pedestal 12.Yet this radio frequency power does not need to be provided to conductor portion 29.Even in this case, also can be owing to putting on the electric field leakage effect of handling the 60MHz radio frequency power in the space S by upper electrode plate 39, and produce subtend electric field towards silicon electrode 53, therefore can remove the dielectric film on the silicon electrode 53.
Should also be noted that, it is the semiconductor wafer that is used for semiconductor device that the substrate that experience RIE handles in plasma processing apparatus 10 or 50 is not limited to, also can be any in following: the various substrates that in LCD (LCD), FPD (flat-panel monitor) or analog, use, photomask, the CD substrate, printed base plate, or analog.
The above embodiments only are examples of the present invention, and should not regard as scope of the present invention is limited.
Scope of the present invention is that the scope by claims limits, and should not only limit to the specific descriptions in this specification.And all changes and the change that belong to the equivalent of claim all should be considered to fall within the scope of the invention.
Claims (7)
1. plasma processing apparatus has:
Contain the substrate processing chamber of handling the space, in described processing space, substrate is carried out plasma treatment;
Radio frequency power is applied to RF electrode in the described processing space;
Dc voltage is applied to DC electrode in the described processing space; And
Be exposed to the grounding electrode in described processing space; Wherein
Described grounding electrode and described RF electrode are adjacent one another are, and are provided with insulation division between them, and
Described grounding electrode and described RF distance between electrodes are set in 0 to 10mm the scope.
2. plasma processing apparatus as claimed in claim 1, wherein, described distance is set in 0 to 5mm the scope.
3. plasma processing apparatus as claimed in claim 1, wherein, the following 0.5mm that is limited to of described distance.
4. plasma processing apparatus as claimed in claim 1, wherein, described insulation division comprises insulator or vacuum space.
5. plasma processing apparatus has:
Contain the substrate processing chamber of handling the space, in described processing space, substrate is carried out plasma treatment;
The radio frequency power that only will be not less than preset frequency is applied to the RF electrode in the described processing space;
Dc voltage is applied to DC electrode in the described processing space; And
Be exposed to the grounding electrode in described processing space; Wherein
Described grounding electrode and described RF electrode are adjacent one another are, and are provided with insulation division between them.
6. plasma processing apparatus as claimed in claim 5, wherein, described preset frequency is 13MHz.
7. plasma processing apparatus as claimed in claim 5, wherein, described insulation division comprises insulator or vacuum space.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006079639 | 2006-03-22 | ||
| JP2006079639A JP4972327B2 (en) | 2006-03-22 | 2006-03-22 | Plasma processing equipment |
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| Publication Number | Publication Date |
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| CN101042989A true CN101042989A (en) | 2007-09-26 |
| CN100570818C CN100570818C (en) | 2009-12-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100894254A Active CN100570818C (en) | 2006-03-22 | 2007-03-22 | Plasma processing apparatus |
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| Country | Link |
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| JP (1) | JP4972327B2 (en) |
| KR (1) | KR100889433B1 (en) |
| CN (1) | CN100570818C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101552186B (en) * | 2008-03-31 | 2011-11-30 | 东京毅力科创株式会社 | Plasma etching method |
| CN102272894A (en) * | 2009-01-09 | 2011-12-07 | 株式会社爱发科 | Plasma processing apparatus |
| CN114107951A (en) * | 2020-08-27 | 2022-03-01 | 铠侠股份有限公司 | Exhaust pipe device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5357639B2 (en) | 2009-06-24 | 2013-12-04 | 株式会社日立ハイテクノロジーズ | Plasma processing apparatus and plasma processing method |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01173711A (en) * | 1987-12-28 | 1989-07-10 | Shimadzu Corp | Thin film forming device |
| JPH0469465U (en) * | 1990-10-22 | 1992-06-19 | ||
| JPH08319588A (en) * | 1996-06-17 | 1996-12-03 | Hitachi Ltd | Plasma etching device |
| JP4051209B2 (en) * | 2001-02-02 | 2008-02-20 | キヤノンアネルバ株式会社 | High frequency plasma processing apparatus and high frequency plasma processing method |
| US7147749B2 (en) * | 2002-09-30 | 2006-12-12 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system |
| EP2479783B1 (en) * | 2004-06-21 | 2018-12-12 | Tokyo Electron Limited | Plasma processing apparatus and method |
| JP4699127B2 (en) * | 2004-07-30 | 2011-06-08 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
-
2006
- 2006-03-22 JP JP2006079639A patent/JP4972327B2/en not_active Expired - Fee Related
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- 2007-03-22 KR KR1020070028048A patent/KR100889433B1/en active IP Right Grant
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101552186B (en) * | 2008-03-31 | 2011-11-30 | 东京毅力科创株式会社 | Plasma etching method |
| CN102272894A (en) * | 2009-01-09 | 2011-12-07 | 株式会社爱发科 | Plasma processing apparatus |
| CN114107951A (en) * | 2020-08-27 | 2022-03-01 | 铠侠股份有限公司 | Exhaust pipe device |
| CN114107951B (en) * | 2020-08-27 | 2024-02-13 | 铠侠股份有限公司 | Exhaust pipe device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070095830A (en) | 2007-10-01 |
| KR100889433B1 (en) | 2009-03-23 |
| CN100570818C (en) | 2009-12-16 |
| JP2007258379A (en) | 2007-10-04 |
| JP4972327B2 (en) | 2012-07-11 |
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