WO2010079753A1 - Plasma processing apparatus - Google Patents

Plasma processing apparatus Download PDF

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Publication number
WO2010079753A1
WO2010079753A1 PCT/JP2010/000057 JP2010000057W WO2010079753A1 WO 2010079753 A1 WO2010079753 A1 WO 2010079753A1 JP 2010000057 W JP2010000057 W JP 2010000057W WO 2010079753 A1 WO2010079753 A1 WO 2010079753A1
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WO
WIPO (PCT)
Prior art keywords
shower
substrate
base
plate
processing apparatus
Prior art date
Application number
PCT/JP2010/000057
Other languages
French (fr)
Japanese (ja)
Inventor
若松貞次
亀崎厚治
菊池正志
神保洋介
江藤謙次
浅利伸
内田寛人
Original Assignee
株式会社アルバック
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to CN2010800040969A priority Critical patent/CN102272894A/en
Priority to JP2010545748A priority patent/JP5394403B2/en
Priority to DE112010000717.9T priority patent/DE112010000717B4/en
Priority to KR1020117015198A priority patent/KR101290738B1/en
Publication of WO2010079753A1 publication Critical patent/WO2010079753A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a plasma processing apparatus.
  • This application claims priority based on Japanese Patent Application No. 2009-004022 filed on Jan. 9, 2009, the contents of which are incorporated herein by reference.
  • a plasma CVD apparatus that decomposes a source gas using plasma and forms a thin film on a substrate is known (see, for example, Patent Document 1).
  • a solar cell particularly a solar cell using microcrystal silicon ( ⁇ c-Si)
  • ⁇ c-Si microcrystal silicon
  • a high-pressure depletion method is effective in a state where the distance between the shower plate surface for ejecting deposition gas to the substrate surface and the substrate surface is narrow (narrow gap). For example, as shown in FIG.
  • film formation is performed in a state where mask members 135 and 143 made of an insulating material are disposed on the peripheral portion of the substrate 10 and the peripheral portion of the shower plate 105.
  • the mask members 135 and 143 prevent the plasma generated in the film formation space from diffusing to other than between the electrodes (between the shower plate 105 and the substrate 10), that is, to confine the plasma in the film formation space. Is provided. Further, each of the constituent members arranged in the CVD apparatus is thermally expanded, so that friction is generated between the members. Mask members 135 and 143 are provided to reduce particles generated due to the friction as much as possible.
  • a mask member 135 having a surface 135c is provided on the peripheral edge of the substrate 10. Further, the mask member 143 having the surface 143a is provided at the peripheral edge of the shower plate 105 having the surface 105a. Further, the shower plate 105 and the substrate 10 are arranged so that the surface 105 a of the shower plate 105 and the upper surface 10 a of the substrate 10 face each other.
  • the distance between the surface 135c and the surface 105a is smaller than the distance between the upper surface 10a and the surface 105a
  • the distance between the surface 143a and the surface 135c is It is smaller than the distance between 105a and the surface 135c. Therefore, it is difficult to realize a narrow gap process in which film formation is performed with the distance between the upper surface 10a of the substrate 10 and the surface 105a of the shower plate 105 set to, for example, 10 mm or less.
  • the mask members 135 and 143 processed to be thin are used in the conventional plasma CVD apparatus 100, there is a problem that the mask members 135 and 143 are frequently cracked. If the distance between the substrate 10 and the shower plate 105 is set as a narrow gap in the plasma CVD apparatus 100 without changing the configuration of the conventional plasma CVD apparatus 100, the distance between the mask members 135 and 143 facing each other is considerably large. Narrow. As a result, the path (gap) through which the film forming gas is exhausted becomes narrow.
  • the present invention has been made in view of the above circumstances, and provides a plasma processing apparatus capable of confining plasma between electrodes even when a narrow gap process is performed.
  • a plasma processing apparatus includes a chamber in which a process gas is introduced and plasma made of the process gas is generated, a first base surface on which a substrate is placed, A second base surface provided at a peripheral edge portion of the first base surface; and a base step portion provided between the first base surface and the second base surface, and disposed in the chamber.
  • a base member and a height that is equal to or less than a height (distance) from the second base surface to the upper surface of the substrate placed on the first base surface, and is disposed on the second base surface;
  • An insulating plate formed of an insulating material; a first shower surface in which an ejection hole is formed; a second shower surface provided at a peripheral edge of the first shower surface; and the first shower surface and the second shower shower between the surface It has a stepped portion, supplies the process gas toward the substrate, and is below the height (distance) from the shower plate disposed in the chamber and the second shower surface to the first shower surface.
  • An electrode mask having a height and disposed on the second shower surface to face the insulating plate and formed of an insulating material.
  • an alternating voltage is applied between the electrodes (between the base member and the shower plate) arranged in the chamber.
  • plasma composed of process gas is generated between the electrodes.
  • a step portion is formed between a plate placement surface, which is a region where the insulating plate is placed on the base member, and a substrate placement surface, which is a region where the substrate is placed.
  • the height from the plate mounting surface to the surface of the insulating plate is not more than the height from the plate mounting surface to the upper surface of the substrate. .
  • a step portion is formed between a mask placement surface, which is a region where the electrode mask is placed on the shower plate, and an ejection hole formation surface, which is a region where the ejection holes are formed in the shower plate. ing. In a state where the electrode mask is disposed on the shower plate, the height from the mask mounting surface to the surface of the electrode mask is not more than the height from the mask mounting surface to the ejection hole forming surface.
  • the plasma processing apparatus is configured in this manner, the upper surface of the substrate and the shower plate are formed in the film formation space formed between the upper surface of the substrate and the surface of the shower plate (first shower surface, ejection hole forming surface).
  • the distance from the first shower surface (spout hole forming surface), which is the region where the spout holes are formed, can be minimized. Therefore, the distance between the substrate and the shower plate can be set without being affected by the thickness of the insulating plate and the thickness of the electrode mask, and a narrow gap can be realized.
  • the step portions base step portion and shower step portion
  • an insulating plate and electrode mask having a sufficient thickness can be used, and cracking of the insulating plate and electrode mask can be prevented. .
  • the plasma can be confined between the electrodes (between the shower plate and the substrate).
  • the plasma can be confined between the electrodes even when a narrow gap process is performed.
  • a sufficient gap for exhausting the film forming gas is formed between the insulating plate and the electrode mask. In-plane uniformity can be stabilized, and the film thickness can be made uniform.
  • a plasma processing apparatus includes a chamber in which a process gas is introduced and plasma made of the process gas is generated, a first base surface on which a substrate is placed, A second base surface provided at a peripheral edge portion of the first base surface; and a base step portion provided between the first base surface and the second base surface, and disposed in the chamber.
  • a base member and a height that is equal to or less than a height (distance) from the second base surface to the upper surface of the substrate placed on the first base surface, and is disposed on the second base surface;
  • An insulating plate formed of an insulating material; a process gas supplied to the substrate; a shower plate disposed in the chamber; and a peripheral portion of the shower plate facing the insulating plate.
  • an alternating voltage is applied between the electrodes (between the base member and the shower plate) arranged in the chamber. As a result, plasma composed of process gas is generated between the electrodes.
  • a step portion is formed between a plate placement surface, which is a region where the insulating plate is placed on the base member, and a substrate placement surface, which is a region where the substrate is placed.
  • a plate placement surface which is a region where the insulating plate is placed on the base member
  • a substrate placement surface which is a region where the substrate is placed.
  • the first surface is an area where the upper surface of the substrate and the ejection holes of the shower plate are formed.
  • the distance from 1 shower surface (jet hole formation surface) can be made shorter than before. Therefore, the distance between the substrate and the shower plate can be shortened, and a narrow gap process can be realized.
  • the step portion base step portion
  • an insulating plate having a sufficient thickness can be used, and cracking of the insulating plate can be prevented. Further, by arranging the insulating plate and the electrode mask, the plasma can be confined between the electrodes (between the shower plate and the substrate).
  • the plasma can be confined between the electrodes even when a narrow gap process is performed. Furthermore, even when the distance between the substrate and the shower plate is set as a narrow gap, a sufficient gap for exhausting the film forming gas is formed between the insulating plate and the electrode mask. In-plane uniformity can be stabilized, and the film thickness can be made uniform.
  • a plasma processing apparatus includes a chamber into which a process gas is introduced and plasma composed of the process gas is generated, and the substrate is placed in the chamber.
  • the insulating plate formed of an insulating material, the first shower surface in which the ejection holes are formed, and the peripheral portion of the first shower surface A second shower surface, and a shower step provided between the first shower surface and the second shower surface, and the process gas is supplied toward the substrate and disposed in the chamber.
  • an alternating voltage is applied between the electrodes (between the base member and the shower plate) arranged in the chamber.
  • plasma composed of process gas is generated between the electrodes.
  • the mask placement surface which is a region where the electrode mask is placed on the shower plate
  • the ejection hole formation surface which is a region where the ejection holes are formed in the shower plate.
  • a step portion is formed. In a state where the electrode mask is disposed on the shower plate, the height from the mask mounting surface to the surface of the electrode mask is not more than the height from the mask mounting surface to the ejection hole forming surface.
  • the first surface is an area where the upper surface of the substrate and the ejection holes of the shower plate are formed.
  • the distance from 1 shower surface (jet hole formation surface) can be made shorter than before. Therefore, the distance between the substrate and the shower plate can be shortened, and a narrow gap process can be realized.
  • the step portion shown step portion
  • an electrode mask having a sufficient thickness can be used, so that the electrode mask can be prevented from cracking. Further, by arranging the insulating plate and the electrode mask, the plasma can be confined between the electrodes (between the shower plate and the substrate).
  • the plasma can be confined between the electrodes even when a narrow gap process is performed. Furthermore, even when the distance between the substrate and the shower plate is set as a narrow gap, a sufficient gap for exhausting the film forming gas is formed between the insulating plate and the electrode mask. In-plane uniformity can be stabilized, and the film thickness can be made uniform.
  • the insulating plate is provided on a first contact surface that is in contact with a side surface of the substrate and a back surface opposite to the upper surface of the substrate. It is preferable to include a protrusion having a second abutting surface to be abutted. In this configuration, the insulating plate has a protrusion that protrudes along the second base surface toward the center of the base member.
  • the insulating plate is placed on the base member (second base surface), and the substrate is disposed on the base member (first base surface) and the insulating plate.
  • the side surface of the substrate contacts the first contact surface, and the back surface of the substrate contacts the second contact surface.
  • the substrate and the protruding portion overlap each other when viewed from the vertical direction of the substrate. Therefore, the deposition gas ejected from the shower plate is supplied (injected) toward the substrate or the insulating plate, and the deposition gas can be prevented from coming into contact with the base member. Therefore, it is possible to prevent plasma from being generated between the shower plate and the base member and forming a film on the base member.
  • the first shower surface which is the region where the upper surface of the substrate and the shower hole of the shower plate are formed.
  • the distance to the surface can be minimized. Therefore, the distance between the substrate and the shower plate can be set without being affected by the thickness of the insulating plate and the thickness of the electrode mask, and a narrow gap can be realized.
  • the step portions base step portion and shower step portion
  • an insulating plate and electrode mask having a sufficient thickness can be used, and cracking of the insulating plate and electrode mask can be prevented. .
  • the plasma can be confined between the electrodes (between the shower plate and the substrate). As a result, the plasma can be confined between the electrodes even when a narrow gap process is performed.
  • FIG. 1 is a schematic configuration diagram of a film forming apparatus in the present embodiment.
  • a film forming apparatus 1 that performs a plasma CVD method includes a vacuum chamber 2 (chamber). An opening is formed in the bottom 11 of the vacuum chamber 2. A support column 25 is inserted into the opening, and the support column 25 is disposed in the lower portion of the vacuum chamber 2. A plate-like base member 3 with a built-in heater 16 is connected to the tip of the column 25 (in the vacuum chamber 2). An electrode flange 4 is attached to the upper portion of the vacuum chamber 2 via an insulating flange 31. Further, an exhaust pipe 27 is connected to the vacuum chamber 2. A vacuum pump 28 is provided at the tip of the exhaust pipe 27. The vacuum pump 28 reduces the pressure so that the inside of the vacuum chamber 2 is in a vacuum state.
  • the support column 25 is connected to an elevating mechanism (not shown) provided outside the vacuum chamber 2 and can move up and down in the vertical direction of the substrate 10.
  • the base member 3 connected to the tip of the support column 25 is configured to be able to move up and down.
  • a bellows 26 is provided outside the vacuum chamber 2 so as to cover the outer periphery of the support column 25.
  • the electrode flange 4 is placed on the insulating flange 31 and formed in a plate shape.
  • a conductor 32 is connected to the surface of the electrode flange 4 facing the film formation space.
  • a plate-like shower plate 5 is attached to the tip of the conductor 32.
  • a space 24 is formed between the shower plate 5 and the electrode flange 4.
  • a gas introduction pipe 7 is connected to the electrode flange 4.
  • the gas introduction pipe 7 supplies a source gas (for example, SiH 4 ) toward the space 24 from a film formation gas supply unit 21 provided outside the vacuum chamber 2.
  • the shower plate 5 includes a first shower surface 5a provided with a large number of gas ejection holes 6 and a second portion provided at the peripheral portion of the first shower surface 5a.
  • step-difference part 42 provided between the 1st shower surface 5a and the 2nd shower surface 5b are provided.
  • the gas ejection hole 6 passes through the shower plate 5.
  • the film forming gas introduced into the space 24 is supplied into the vacuum chamber 2 through the gas ejection holes 6.
  • the electrode flange 4 and the shower plate 5 are both made of a conductive material.
  • the electrode flange 4 is connected to an RF power source (high frequency power source) 9 provided outside the vacuum chamber 2.
  • a gas introduction pipe 8 different from the gas introduction pipe 7 is connected to the vacuum chamber 2.
  • the gas introduction pipe 8 is provided with a fluorine gas supply unit 22 and a radical source 23.
  • the radical source 23 decomposes the fluorine gas supplied from the fluorine gas supply unit 22.
  • the gas introduction pipe 8 supplies fluorine radicals obtained by decomposing fluorine gas to the film forming space in the vacuum chamber 2.
  • the base member 3 is a substantially plate-like member having a flat surface. As will be described later with reference to FIG. 2, the base member 3 includes a first base surface 33 on which the substrate 10 is placed, a second base surface 33 a provided at the peripheral edge of the first base surface 33, A base step portion 34 provided between the first base surface 33 and the second base surface 33 a is disposed in the vacuum chamber 2.
  • the base member 3 functions as a ground electrode and is made of, for example, an aluminum alloy.
  • materials other than said material may be employ
  • substrate 10 is arrange
  • the deposition gas is supplied to the deposition space through the gas ejection holes 6 toward the surface of the substrate 10.
  • a heater 16 connected to a power supply line is provided inside the base member 3.
  • the temperature of the base member 3 is adjusted to a predetermined temperature by the heater 16.
  • a power line of the heater 16 protrudes from a substantially central portion of the base member 3 as viewed from the vertical direction of the base member 3 and from the bottom surface 17 of the base member 3, is inserted into the support column 25, and goes to the outside of the vacuum chamber 2. It is led with.
  • the heater 16 is connected to a power source (not shown) outside the vacuum chamber 2 and adjusts the temperature of the base member 3.
  • ground plates 30 connecting the base member 3 and the vacuum chamber 2 are arranged at substantially equal intervals on the bottom 11 of the vacuum chamber 2.
  • the earth plate 30 is made of a flexible metal plate, and is made of, for example, a nickel-based alloy or an aluminum alloy.
  • FIG. 2 is an enlarged cross-sectional view of the portion indicated by the symbol A in FIG.
  • “low position” means that the other position is lower than one position in the direction from the position of the film formation space toward the bottom 11 of the vacuum chamber 2.
  • “high position” means that the other position is higher than the one position in the direction from the position of the film formation space toward the electrode flange 4.
  • a second base surface 33 a formed at a position lower than the first base surface 33 is provided on the peripheral edge portion of the first base surface 33 of the base member 3.
  • a base step portion 34 is formed between the first base surface 33 and the second base surface 33a. The position of the base step portion 34 in the horizontal direction of the first base surface 33 is determined so that the length (diameter) of the first base surface 33 is smaller than the length (diameter) of the substrate 10. That is, when the substrate 10 is placed on the first base surface 33 of the base member 3, the position of the peripheral portion of the substrate 10 in the horizontal direction of the substrate 10 protrudes from the base step portion 34. In other words, the peripheral edge of the substrate 10 is located outside the first base surface 33. That is, the base step portion 34 is formed at a position in contact with the back surface 10 c of the substrate 10.
  • An insulating plate 35 is placed on the second base surface 33 a formed at a position lower than the first base surface 33 via the base step portion 34.
  • the insulating plate 35 is formed in a frame shape along the peripheral edge of the substrate 10.
  • a material of the insulating plate 35 for example, alumina which is an insulator is employed.
  • the thickness (height) of the insulating plate 35 is not more than the height from the second base surface 33 a to the upper surface 10 of the substrate 10 placed on the first base surface 33.
  • the position of the surface 35c of the insulating plate 35 and the position of the upper surface 10a of the substrate 10 coincide with each other in the vertical direction of the substrate 10. Yes.
  • the insulating plate 35 has a size that covers at least the second base surface 33a in the vertical direction of the substrate 10 when the insulating plate 35 is placed on the second base surface 33a.
  • the insulating plate 35 includes a first contact surface 35a that contacts the side surface 10b of the substrate 10 and a second contact surface 35d that contacts the back surface 10c opposite to the upper surface 10a of the substrate 10.
  • the insulating plate 35 has the protruding portion 35b protruding toward the center of the base member 3 along the second base surface 33a.
  • the protruding portion 35 b is located below the back surface 10 c of the substrate 10 and is in contact with the back surface 10 c of the substrate 10.
  • the protruding portion 35 b is substantially in contact with the base step portion 34.
  • the insulating plate 35 is formed so as to protrude from the end of the base member 3 in the horizontal direction, and is provided on the peripheral edge (second base surface 33a) of the base member 3. An end portion of the insulating plate 35 is supported by a support member 36 that supports the base member 3.
  • an insulator 37 made of alumina, for example, is attached to the inner surface of the vacuum chamber 2 facing the support member 36.
  • a second shower surface 5 b formed at a position higher than the first shower surface 5 a is provided at the peripheral edge portion of the first shower surface 5 a of the shower plate 5.
  • a shower step portion 42 is formed between the first shower surface 5a and the second shower surface 5b.
  • An electrode mask 43 formed in a frame shape is placed on the second shower surface 5b formed at a position higher than the first shower surface 5a via the shower step portion 42.
  • alumina which is an insulator is employed as a material of the electrode mask 43.
  • the electrode mask 43 is disposed on the second shower surface 5 b so as to face the insulating plate 35.
  • the thickness (height) of the electrode mask 43 is not more than the height from the second shower surface 5b to the first shower surface 5a.
  • the electrode mask 43 has a size that covers at least the second shower surface 5b in the vertical direction of the shower plate 5 when the electrode mask 43 is placed on the second shower surface 5b.
  • the electrode mask 43 is formed so as to protrude from the end of the shower plate 5 in the horizontal direction.
  • the electrode mask 43 has a size that covers the surface of the support member 44 that supports the shower plate 5 and the surface of the support member 45 provided between the vacuum chamber 2 and the insulating flange 31.
  • the vacuum chamber 2 is decompressed using the vacuum pump 28.
  • the substrate 10 is carried into the vacuum chamber 2 and placed on the base member 3 while the vacuum chamber 2 is maintained in a vacuum.
  • the base member 3 is positioned on the lower side in the vacuum chamber 2. That is, before the substrate 10 is carried in, the distance between the base member 3 and the shower plate 5 is wide, so that the substrate 10 can be easily placed on the base member 3 using a robot arm (not shown). can do.
  • an elevating device (not shown) is activated, the column 25 is pushed upward, and the substrate 10 placed on the base member 3 also moves upward.
  • the interval between the shower plate 5 and the substrate 10 is determined as desired so that the interval necessary for proper film formation is achieved, and this interval is maintained.
  • the position of the surface 35c of the insulating plate 35 coincides with the position of the upper surface 10a of the substrate 10, and the position of the surface 43a of the electrode mask 43 and the position of the first shower surface 5a are the same. I'm doing it.
  • the gap between the substrate 10 and the shower plate 5 can be reduced without the insulating plate 35 and the electrode mask 43 being in contact with each other, and a narrow gap (3 to 10 mm) can be realized.
  • a film forming gas raw material gas
  • the film forming gas is supplied into the vacuum chamber 2 (film forming space) from the gas ejection holes 6.
  • the RF power source 9 is activated and a high frequency voltage is applied to the electrode flange 4. Applied. At this time, a high frequency voltage is applied between the shower plate 5 and the base member 3 to generate a discharge, and plasma is generated between the electrode flange 4 and the surface of the substrate 10. The deposition gas is decomposed in the plasma generated in this way, and a vapor phase growth reaction occurs on the surface of the substrate 10, whereby a thin film is formed on the surface of the substrate 10.
  • the film forming material adheres to the inner wall surface of the vacuum chamber 2 and the like, so that the inside of the vacuum chamber 2 is periodically cleaned.
  • the fluorine gas supplied from the fluorine gas supply unit 22 is decomposed by the radical source 23 to generate fluorine radicals.
  • the fluorine radicals pass through the gas introduction pipe 8 connected to the vacuum chamber 2 and pass through the vacuum chamber 2. To be supplied.
  • a chemical reaction occurs. For example, the first shower surface 5a of the shower plate 5, the surface 43a of the electrode mask 43, or the surface of the insulating plate 35 Deposits adhered to 35c and the like are removed.
  • the base step portion 34 is formed between the second base surface 33a, which is a region where the insulating plate 35 is placed, and the first base surface 33, which is a region where the substrate 10 is placed. Has been. Further, in a state where the substrate 10 and the insulating plate 35 are placed on the base member 3, the position of the surface 35 c of the insulating plate 35 and the position of the upper surface 10 a of the substrate 10 coincide with each other in the vertical direction of the substrate 10.
  • a shower step portion 42 is formed between the second shower surface 5b, which is a region where the electrode mask 43 is placed, and the first shower surface 5a, which is a region where a plurality of ejection holes 6 are formed. Yes.
  • the position of the surface 43 a of the electrode mask 43 and the position of the first shower surface 5 a coincide with each other in the vertical direction of the shower plate 5. Therefore, in the film forming space formed between the upper surface 10a of the substrate 10 and the first shower surface 5a of the shower plate 5, the distance between the upper surface 10a of the substrate 10 and the first shower surface 5a of the shower plate 5 is set as follows. Can be as short as possible. Therefore, the distance between the substrate 10 and the shower plate 5 can be set without being affected by the thickness 35 of the insulating plate and the thickness of the electrode mask 43, and a narrow gap can be realized.
  • the insulating plate 35 and the electrode mask 43 having sufficient thickness can be used. Cracking can be prevented. Further, by disposing the insulating plate 35 and the electrode mask 43, the plasma can be confined between the electrodes (between the shower plate 5 and the substrate 10). As a result, the plasma can be confined between the electrodes even when a narrow gap process is performed. Further, even when the distance between the substrate 10 and the shower plate 5 is set as a narrow gap, a sufficient gap is formed between the insulating plate 35 and the electrode mask 43 for exhausting the film forming gas, The in-plane uniformity of the gas flow can be stabilized and the film thickness can be made uniform. That is, the ⁇ c-Si film can be formed in the plasma processing apparatus configured as described above.
  • the insulating plate 35 extends along the first contact surface 35a that contacts the side surface 10b of the substrate 10, the second contact surface 35d that contacts the back surface 10c of the substrate 10, and the second base surface 33a. And a protruding portion 35b protruding toward the center of the base member 3.
  • the insulating plate 35 having such a configuration is placed on the base member 3 and the substrate 10 is disposed on the first base surface 33, the back surface 10c of the substrate 10 contacts the second contact surface. Further, when viewed from the vertical direction of the substrate 10, the substrate 10 and the protruding portion 35b overlap.
  • the film forming gas supplied from the shower plate 5 comes into contact with the substrate 10 or the insulating plate 35, it is possible to prevent the film forming gas from coming into direct contact with the base member 3. Therefore, it is possible to prevent plasma from being generated between the shower plate 5 and the base member 3 and forming a film on the surface of the base member 3.
  • the electrode mask 43 is formed so as to protrude from the end of the shower plate 5 in the horizontal direction, and the support member 44 that supports the shower plate 5 and the support provided between the vacuum chamber 2 and the insulating flange 31.
  • the surface of the member 45 is covered.
  • the power frequency applied from the RF power source 9 was set to 27.12 MHz, and the RFPower density was set to 1.2 W / cm 2 .
  • the distance between the shower plate 5 and the substrate 10 was set to 7 mm (narrow gap), and the pressure in the film formation space was set to 1400 Pa.
  • the ratio of the flow rate (slm) of SiH 4 and the flow rate of H 2 (slm) as the deposition gas was set to 1:15, and ⁇ c-Si was deposited on the substrate 10.
  • a film formation rate was 2.1 nm / sec, and a ⁇ c-Si film having a film thickness distribution (thickness uniformity) of 11% could be formed.
  • the power frequency applied from the RF power source was set to 27.12 MHz, and the RFPower density was set to 1.2 W / cm 2 . Further, the distance between the shower plate 5 and the substrate 10 was set to 11 mm, and the pressure in the film formation space was set to 700 Pa. Then, the ratio of the flow rate (slm) of SiH 4 and the flow rate of H 2 (slm) as the deposition gas was set to 1:15, and ⁇ c-Si was deposited on the substrate 10.
  • a film formation rate was 1.1 nm / sec, and a film of ⁇ c-Si having a film thickness distribution (film thickness uniformity) of 23% was formed.
  • the position of the surface 35c of the insulating plate 35 and the position of the upper surface 10a of the substrate 10 coincide in the vertical direction of the substrate 10, and the position of the surface 43a of the electrode mask 43 and the first shower.
  • the film forming speed can be increased, the film thickness distribution (film thickness uniformity) is excellent, and the quality is high.
  • An appropriate ⁇ c-Si film can be formed.
  • the configuration in which the position of the surface 35c of the insulating plate 35 and the position of the upper surface 10a of the substrate 10 coincide in the vertical direction of the substrate 10 has been described.
  • a configuration in which the position of the surface 35c of the insulating plate 35 is low may be employed. That is, the thickness (height) of the insulating plate 35 is equal to or less than the height from the second base surface 33 a to the upper surface 10 of the substrate 10 placed on the first base surface 33.
  • the configuration in which the position of the surface 43a of the electrode mask 43 and the position of the first shower surface 5a coincide in the vertical direction of the shower plate 5 has been described.
  • a configuration in which the position of the surface 43a of the electrode mask 43 is higher than the position may be employed. That is, the thickness (height) of the electrode mask 43 is not more than the height from the second shower surface 5b to the first shower surface 5a.
  • the first configuration in which the position of the surface 35c of the insulating plate 35 and the position of the upper surface 10a of the substrate 10 coincide with each other in the vertical direction of the substrate 10, and the position of the surface 43a of the electrode mask 43.
  • the plasma processing apparatus was described in which the second configuration in which the position of the first shower surface 5a coincides in the vertical direction of the shower plate 5 has been described, the present invention is not limited to this configuration.
  • a plasma processing apparatus in which one of the first configuration and the second configuration is combined with the conventional configuration may be employed. That is, if the distance between the substrate 10 and the shower plate 5 is set so as to realize a narrow gap (10 mm or less), the above-described effects can be obtained. In addition, the above-described effects can be obtained if a sufficient gap is formed between the insulating plate 35 and the electrode mask 43 to smoothly exhaust the film forming gas.
  • the boundary between the surface 35c of the insulating plate 35 and the upper surface 10a of the substrate 10, and the boundary between the surface 43a of the electrode mask 43 and the first shower surface 5a of the shower plate 5 Although the side surface is formed so as to intersect at a substantially right angle, a curved surface may be formed between the upper surface and the side surface at the boundary. By forming a curved surface at the boundary portion in this way, it is possible to suppress the occurrence of abnormal discharge.
  • the present invention is useful for a plasma processing apparatus capable of confining plasma between electrodes even when a narrow gap process is performed.
  • SYMBOLS 1 Film-forming apparatus (plasma processing apparatus) 2 ... Vacuum chamber (chamber) 3 ... Base member 5 ... shower plate 5a ... 1st shower surface 5b ... 2nd shower surface 6 ... Gas ejection hole 10 ... Substrate 10a ... Upper surface 10b ... Side surface 10c ... Back surface 33 ... First base surface 33a ... Second base surface 34 ... Base step portion 35 ... Insulating plate 35a ... First contact surface 35b ... Projection portion 35c ... Surface 35d ... Second contact surface 42 ... shower step Part 43 ... Electrode mask 43a ... Surface.

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Abstract

Disclosed is a plasma processing apparatus comprising: a base member (3) having a first base surface (33), a second base surface (33a) and a base step portion (34); an insulating plate (35) which is formed from an insulating material and arranged on the second base surface (33a), while having a height equal to or less than the height from the second base surface (33a) to the upper surface (10a) of a substrate (10) that is arranged on the first base surface (33); a shower plate (5) having a first shower surface (5a), a second shower surface (5b) and a shower step portion (42); and an electrode mask (43) which is formed from an insulating material and so arranged on the second shower surface (5b) as to face the insulating plate (35), while having a height equal to or less than the height from the second shower surface (5b) to the first shower surface (5a).

Description

プラズマ処理装置Plasma processing equipment
　本発明は、プラズマ処理装置に関する。
　本願は、２００９年１月９日に出願された特願２００９－００４０２２号に基づき優先権を主張し、その内容をここに援用する。 The present invention relates to a plasma processing apparatus.
This application claims priority based on Japanese Patent Application No. 2009-004022 filed on Jan. 9, 2009, the contents of which are incorporated herein by reference.
　従来から、プラズマを用いて原料ガスを分解し、基板上に薄膜を形成するプラズマＣＶＤ装置が知られている（例えば、特許文献１参照）。
　このプラズマＣＶＤ装置を用いて太陽電池、特にマイクロクリスタルシリコン（μｃ－Ｓｉ）を利用した太陽電池を製造する際には、生産性の観点から成膜速度の高速化が必要である。
　成膜速度の高速化を実現するためには、成膜ガスを基板表面に噴出するシャワープレート表面と基板表面との距離を狭くした状態（ナローギャップ）における高圧枯渇法が有効である。
　例えば、図３に示すように、従来のプラズマＣＶＤ装置１００においては、基板１０の周縁部及びシャワープレート１０５の周縁部に絶縁材で形成されたマスク部材１３５，１４３が配置された状態で成膜が行われていた。
　このマスク部材１３５，１４３は、成膜空間において発生するプラズマが電極間（シャワープレート１０５と基板１０との間）以外へ拡散することを抑制するため、つまり、プラズマを成膜空間内に閉じ込めるために設けられている。
　また、ＣＶＤ装置内に配置された構成部材の各々が熱膨張することで、各部材間で摩擦が生じる。その摩擦に起因して発生するパーティクルを極力減らすためにマスク部材１３５，１４３が設けられている。 2. Description of the Related Art Conventionally, a plasma CVD apparatus that decomposes a source gas using plasma and forms a thin film on a substrate is known (see, for example, Patent Document 1).
When manufacturing a solar cell, particularly a solar cell using microcrystal silicon (μc-Si), using this plasma CVD apparatus, it is necessary to increase the deposition rate from the viewpoint of productivity.
In order to increase the deposition rate, a high-pressure depletion method is effective in a state where the distance between the shower plate surface for ejecting deposition gas to the substrate surface and the substrate surface is narrow (narrow gap).
For example, as shown in FIG. 3, in the conventional plasma CVD apparatus 100, film formation is performed in a state where mask members 135 and 143 made of an insulating material are disposed on the peripheral portion of the substrate 10 and the peripheral portion of the shower plate 105. Was done.
The mask members 135 and 143 prevent the plasma generated in the film formation space from diffusing to other than between the electrodes (between the shower plate 105 and the substrate 10), that is, to confine the plasma in the film formation space. Is provided.
Further, each of the constituent members arranged in the CVD apparatus is thermally expanded, so that friction is generated between the members. Mask members 135 and 143 are provided to reduce particles generated due to the friction as much as possible.
特開２０００－５８５１８号公報JP 2000-58518 A
　ところで、従来のプラズマＣＶＤ装置１００においては、表面１３５ｃを有するマスク部材１３５が、基板１０の周縁部に設けられている。また、表面１４３ａを有するマスク部材１４３は、表面１０５ａを有するシャワープレート１０５の周縁部に設けられている。また、シャワープレート１０５の表面１０５ａと基板１０の上面１０ａとが対向するようにシャワープレート１０５と基板１０とが配置されている。
　このような従来の構成において、特に基板１０の鉛直方向においては、表面１３５ｃと表面１０５ａとの距離は、上面１０ａと表面１０５ａとの距離よりも小さく、表面１４３ａと表面１３５ｃとの距離は、表面１０５ａと表面１３５ｃとの距離よりも小さい。
　従って、基板１０の上面１０ａとシャワープレート１０５の表面１０５ａとの間の距離を例えば１０ｍｍ以下に設定して成膜を行うナローギャッププロセスを実現することが困難である。 Incidentally, in the conventional plasma CVD apparatus 100, a mask member 135 having a surface 135c is provided on the peripheral edge of the substrate 10. Further, the mask member 143 having the surface 143a is provided at the peripheral edge of the shower plate 105 having the surface 105a. Further, the shower plate 105 and the substrate 10 are arranged so that the surface 105 a of the shower plate 105 and the upper surface 10 a of the substrate 10 face each other.
In such a conventional configuration, particularly in the vertical direction of the substrate 10, the distance between the surface 135c and the surface 105a is smaller than the distance between the upper surface 10a and the surface 105a, and the distance between the surface 143a and the surface 135c is It is smaller than the distance between 105a and the surface 135c.
Therefore, it is difficult to realize a narrow gap process in which film formation is performed with the distance between the upper surface 10a of the substrate 10 and the surface 105a of the shower plate 105 set to, for example, 10 mm or less.
　具体的には、厚さが薄くなるように加工されたマスク部材１３５，１４３を従来のプラズマＣＶＤ装置１００に用いた場合、マスク部材１３５，１４３の割れが頻発するという問題がある。
　また、従来のプラズマＣＶＤ装置１００の構成を変えずに、このプラズマＣＶＤ装置１００において基板１０とシャワープレート１０５との距離をナローギャップとして設定すると、互いに対向するマスク部材１３５，１４３間の距離がかなり狭くなる。その結果、成膜ガスが排気される経路（ギャップ）が狭くなる。
　つまり、例えば、Ｐ層，Ｉ層，及びＮ層を連続的に成膜する工程のように、互いに異なる複数種類の膜を同じチャンバ内で形成する場合、電極間距離（基板１０とシャワープレート１０５との距離）を少し変化させるだけで、コンダクタンスが大きく変動する。このため、コンダクタンスの変動に伴ってガスの流れの面内均一性が不安定になり、膜厚が不均一になるという問題がある。 Specifically, when the mask members 135 and 143 processed to be thin are used in the conventional plasma CVD apparatus 100, there is a problem that the mask members 135 and 143 are frequently cracked.
If the distance between the substrate 10 and the shower plate 105 is set as a narrow gap in the plasma CVD apparatus 100 without changing the configuration of the conventional plasma CVD apparatus 100, the distance between the mask members 135 and 143 facing each other is considerably large. Narrow. As a result, the path (gap) through which the film forming gas is exhausted becomes narrow.
That is, for example, when a plurality of different types of films are formed in the same chamber as in the process of continuously forming the P layer, the I layer, and the N layer, the distance between the electrodes (the substrate 10 and the shower plate 105 The conductance fluctuates greatly with a slight change in the distance. For this reason, there is a problem that the in-plane uniformity of the gas flow becomes unstable with the conductance variation, and the film thickness becomes non-uniform.
　本発明は、上述の事情に鑑みてなされたものであり、ナローギャッププロセスを行う場合であってもプラズマを電極間に閉じ込めることができるプラズマ処理装置を提供する。 The present invention has been made in view of the above circumstances, and provides a plasma processing apparatus capable of confining plasma between electrodes even when a narrow gap process is performed.
　上記課題を解決するために、本発明の第１態様のプラズマ処理装置は、プロセスガスが導入され、前記プロセスガスからなるプラズマが生成されるチャンバと、基板が載置される第１ベース面，前記第１ベース面の周縁部に設けられた第２ベース面，及び前記第１ベース面と前記第２ベース面との間に設けられたベース段差部を有し、前記チャンバ内に配置されたベース部材と、前記第２ベース面から前記第１ベース面に載置された前記基板の上面までの高さ（距離）以下である高さを有し、前記第２ベース面上に配置され、絶縁物質で形成された絶縁プレートと、噴出孔が形成されている第１シャワー面，前記第１シャワー面の周縁部に設けられた第２シャワー面，及び前記第１シャワー面と前記第２シャワー面との間に設けられたシャワー段差部を有し、前記基板に向けて前記プロセスガスを供給し、前記チャンバ内に配置されたシャワープレートと、前記第２シャワー面から前記第１シャワー面までの高さ（距離）以下である高さを有し、前記絶縁プレートに対向するように前記第２シャワー面上に配置され、絶縁物質で形成された電極マスクとを含む。
　プラズマ処理装置においては、チャンバ内に配置された電極間（ベース部材とシャワープレートとの間）には、交流電圧が印加される。これによって電極間にはプロセスガスからなるプラズマが生成される。
　このプラズマ処理装置においては、前記ベース部材における前記絶縁プレートが載置される領域であるプレート載置面と、前記基板が載置される領域である基板載置面との間に段差部が形成されている。前記基板及び前記絶縁プレートが前記ベース部材に載置された状態で、プレート載置面から前記絶縁プレートの表面までの高さは、プレート載置面から前記基板の上面までの高さ以下である。
　また、前記シャワープレートにおける前記電極マスクが載置される領域であるマスク載置面と、前記シャワープレートにおける噴出孔が形成されている領域である噴出孔形成面との間に段差部が形成されている。前記電極マスクが前記シャワープレートに配置された状態で、マスク載置面から前記電極マスクの表面までの高さは、マスク載置面から噴出孔形成面までの高さ以下である。 In order to solve the above problems, a plasma processing apparatus according to a first aspect of the present invention includes a chamber in which a process gas is introduced and plasma made of the process gas is generated, a first base surface on which a substrate is placed, A second base surface provided at a peripheral edge portion of the first base surface; and a base step portion provided between the first base surface and the second base surface, and disposed in the chamber. A base member, and a height that is equal to or less than a height (distance) from the second base surface to the upper surface of the substrate placed on the first base surface, and is disposed on the second base surface; An insulating plate formed of an insulating material; a first shower surface in which an ejection hole is formed; a second shower surface provided at a peripheral edge of the first shower surface; and the first shower surface and the second shower Shower between the surface It has a stepped portion, supplies the process gas toward the substrate, and is below the height (distance) from the shower plate disposed in the chamber and the second shower surface to the first shower surface. An electrode mask having a height and disposed on the second shower surface to face the insulating plate and formed of an insulating material.
In the plasma processing apparatus, an alternating voltage is applied between the electrodes (between the base member and the shower plate) arranged in the chamber. As a result, plasma composed of process gas is generated between the electrodes.
In this plasma processing apparatus, a step portion is formed between a plate placement surface, which is a region where the insulating plate is placed on the base member, and a substrate placement surface, which is a region where the substrate is placed. Has been. In a state where the substrate and the insulating plate are mounted on the base member, the height from the plate mounting surface to the surface of the insulating plate is not more than the height from the plate mounting surface to the upper surface of the substrate. .
In addition, a step portion is formed between a mask placement surface, which is a region where the electrode mask is placed on the shower plate, and an ejection hole formation surface, which is a region where the ejection holes are formed in the shower plate. ing. In a state where the electrode mask is disposed on the shower plate, the height from the mask mounting surface to the surface of the electrode mask is not more than the height from the mask mounting surface to the ejection hole forming surface.
　このようにプラズマ処理装置が構成されているので、基板の上面とシャワープレートの表面（第１シャワー面，噴出孔形成面）との間に形成される成膜空間において、基板の上面とシャワープレートの噴出孔が形成された領域である第１シャワー面（噴出孔形成面）との間の距離を最短にすることができる。
　従って、絶縁プレートの厚さ及び電極マスクの厚さに影響されず、基板とシャワープレートとの間の距離を設定することができ、ナローギャップを実現することができる。
　また、段差部（ベース段差部及びシャワー段差部）が形成されているので、十分な厚さを有する絶縁プレート及び電極マスクを用いることができ、絶縁プレート及び電極マスクの割れを防止することができる。
　また、絶縁プレート及び電極マスクを配置することにより、プラズマを電極間（シャワープレートと基板との間）に閉じ込めることができる。
　結果として、ナローギャッププロセスを行う場合であってもプラズマを電極間に閉じ込めることができる。
　さらに、基板とシャワープレートとの距離をナローギャップとして設定した場合であっても、絶縁プレートと電極マスクとの間には成膜ガスを排気するための十分な隙間が形成され、ガスの流れの面内均一性を安定化させることができ、膜厚を均一にすることができる。 Since the plasma processing apparatus is configured in this manner, the upper surface of the substrate and the shower plate are formed in the film formation space formed between the upper surface of the substrate and the surface of the shower plate (first shower surface, ejection hole forming surface). The distance from the first shower surface (spout hole forming surface), which is the region where the spout holes are formed, can be minimized.
Therefore, the distance between the substrate and the shower plate can be set without being affected by the thickness of the insulating plate and the thickness of the electrode mask, and a narrow gap can be realized.
Further, since the step portions (base step portion and shower step portion) are formed, an insulating plate and electrode mask having a sufficient thickness can be used, and cracking of the insulating plate and electrode mask can be prevented. .
Further, by arranging the insulating plate and the electrode mask, the plasma can be confined between the electrodes (between the shower plate and the substrate).
As a result, the plasma can be confined between the electrodes even when a narrow gap process is performed.
Furthermore, even when the distance between the substrate and the shower plate is set as a narrow gap, a sufficient gap for exhausting the film forming gas is formed between the insulating plate and the electrode mask. In-plane uniformity can be stabilized, and the film thickness can be made uniform.
　上記課題を解決するために、本発明の第２態様のプラズマ処理装置は、プロセスガスが導入され、前記プロセスガスからなるプラズマが生成されるチャンバと、基板が載置される第１ベース面，前記第１ベース面の周縁部に設けられた第２ベース面，及び前記第１ベース面と前記第２ベース面との間に設けられたベース段差部を有し、前記チャンバ内に配置されたベース部材と、前記第２ベース面から前記第１ベース面に載置された前記基板の上面までの高さ（距離）以下である高さを有し、前記第２ベース面上に配置され、絶縁物質で形成された絶縁プレートと、前記基板に向けて前記プロセスガスを供給し、前記チャンバ内に配置されたシャワープレートと、前記絶縁プレートに対向するように前記シャワープレートの周縁部に配置され、絶縁物質で形成された電極マスクとを含む。
　プラズマ処理装置においては、チャンバ内に配置された電極間（ベース部材とシャワープレートとの間）には、交流電圧が印加される。これによって電極間にはプロセスガスからなるプラズマが生成される。
　このプラズマ処理装置においては、前記ベース部材における前記絶縁プレートが載置される領域であるプレート載置面と、前記基板が載置される領域である基板載置面との間に段差部が形成されている。前記基板及び前記絶縁プレートが前記ベース部材に載置された状態で、プレート載置面から前記絶縁プレートの表面までの高さは、プレート載置面から前記基板の上面までの高さ以下である。 In order to solve the above problems, a plasma processing apparatus according to a second aspect of the present invention includes a chamber in which a process gas is introduced and plasma made of the process gas is generated, a first base surface on which a substrate is placed, A second base surface provided at a peripheral edge portion of the first base surface; and a base step portion provided between the first base surface and the second base surface, and disposed in the chamber. A base member, and a height that is equal to or less than a height (distance) from the second base surface to the upper surface of the substrate placed on the first base surface, and is disposed on the second base surface; An insulating plate formed of an insulating material; a process gas supplied to the substrate; a shower plate disposed in the chamber; and a peripheral portion of the shower plate facing the insulating plate. Comprising an electrode mask formed of an insulating material.
In the plasma processing apparatus, an alternating voltage is applied between the electrodes (between the base member and the shower plate) arranged in the chamber. As a result, plasma composed of process gas is generated between the electrodes.
In this plasma processing apparatus, a step portion is formed between a plate placement surface, which is a region where the insulating plate is placed on the base member, and a substrate placement surface, which is a region where the substrate is placed. Has been. In a state where the substrate and the insulating plate are mounted on the base member, the height from the plate mounting surface to the surface of the insulating plate is not more than the height from the plate mounting surface to the upper surface of the substrate. .
　このようにプラズマ処理装置が構成されているので、基板の上面とシャワープレートの表面との間に形成される成膜空間において、基板の上面とシャワープレートの噴出孔が形成された領域である第１シャワー面（噴出孔形成面）との間の距離を従来よりも短くすることができる。
　従って、基板とシャワープレートとの間の距離を短くすることができ、ナローギャッププロセスを実現することができる。
　また、段差部（ベース段差部）が形成されているので、十分な厚さを有する絶縁プレートを用いることができ、絶縁プレートの割れを防止することができる。
　また、絶縁プレート及び電極マスクを配置することにより、プラズマを電極間（シャワープレートと基板との間）に閉じ込めることができる。
　結果として、ナローギャッププロセスを行う場合であってもプラズマを電極間に閉じ込めることができる。
　さらに、基板とシャワープレートとの距離をナローギャップとして設定した場合であっても、絶縁プレートと電極マスクとの間には成膜ガスを排気するための十分な隙間が形成され、ガスの流れの面内均一性を安定化させることができ、膜厚を均一にすることができる。 Since the plasma processing apparatus is configured in this way, in the film formation space formed between the upper surface of the substrate and the surface of the shower plate, the first surface is an area where the upper surface of the substrate and the ejection holes of the shower plate are formed. The distance from 1 shower surface (jet hole formation surface) can be made shorter than before.
Therefore, the distance between the substrate and the shower plate can be shortened, and a narrow gap process can be realized.
In addition, since the step portion (base step portion) is formed, an insulating plate having a sufficient thickness can be used, and cracking of the insulating plate can be prevented.
Further, by arranging the insulating plate and the electrode mask, the plasma can be confined between the electrodes (between the shower plate and the substrate).
As a result, the plasma can be confined between the electrodes even when a narrow gap process is performed.
Furthermore, even when the distance between the substrate and the shower plate is set as a narrow gap, a sufficient gap for exhausting the film forming gas is formed between the insulating plate and the electrode mask. In-plane uniformity can be stabilized, and the film thickness can be made uniform.
　上記課題を解決するために、本発明の第３態様のプラズマ処理装置は、プロセスガスが導入され、前記プロセスガスからなるプラズマが生成されるチャンバと、前記チャンバ内に配置され、基板が載置されるベース部材と、前記ベース部材の周縁部に配置され、絶縁物質で形成された絶縁プレートと、噴出孔が形成されている第１シャワー面，前記第１シャワー面の周縁部に設けられた第２シャワー面，及び前記第１シャワー面と前記第２シャワー面との間に設けられたシャワー段差部を有し、前記基板に向けて前記プロセスガスを供給し、前記チャンバ内に配置されたシャワープレートと、前記第２シャワー面から前記第１シャワー面までの高さ（距離）以下である高さを有し、前記絶縁プレートに対向するように前記第２シャワー面上に配置され、絶縁物質で形成された電極マスクと、を含む。
　プラズマ処理装置においては、チャンバ内に配置された電極間（ベース部材とシャワープレートとの間）には、交流電圧が印加される。これによって電極間にはプロセスガスからなるプラズマが生成される。
　このプラズマ処理装置においては、前記シャワープレートにおける前記電極マスクが載置される領域であるマスク載置面と、前記シャワープレートにおける噴出孔が形成されている領域である噴出孔形成面との間に段差部が形成されている。前記電極マスクが前記シャワープレートに配置された状態で、マスク載置面から前記電極マスクの表面までの高さは、マスク載置面から噴出孔形成面までの高さ以下である。
In order to solve the above-described problem, a plasma processing apparatus according to a third aspect of the present invention includes a chamber into which a process gas is introduced and plasma composed of the process gas is generated, and the substrate is placed in the chamber. Provided on the peripheral portion of the base member, the insulating plate formed of an insulating material, the first shower surface in which the ejection holes are formed, and the peripheral portion of the first shower surface A second shower surface, and a shower step provided between the first shower surface and the second shower surface, and the process gas is supplied toward the substrate and disposed in the chamber. A shower plate and a height equal to or less than a height (distance) from the second shower surface to the first shower surface, and on the second shower surface to face the insulating plate It is location, including an electrode mask formed of an insulating material, the.
In the plasma processing apparatus, an alternating voltage is applied between the electrodes (between the base member and the shower plate) arranged in the chamber. As a result, plasma composed of process gas is generated between the electrodes.
In this plasma processing apparatus, between the mask placement surface, which is a region where the electrode mask is placed on the shower plate, and the ejection hole formation surface, which is a region where the ejection holes are formed in the shower plate. A step portion is formed. In a state where the electrode mask is disposed on the shower plate, the height from the mask mounting surface to the surface of the electrode mask is not more than the height from the mask mounting surface to the ejection hole forming surface.
　このようにプラズマ処理装置が構成されているので、基板の上面とシャワープレートの表面との間に形成される成膜空間において、基板の上面とシャワープレートの噴出孔が形成された領域である第１シャワー面（噴出孔形成面）との間の距離を従来よりも短くすることができる。
　従って、基板とシャワープレートとの間の距離を短くすることができ、ナローギャッププロセスを実現することができる。
　また、段差部（シャワー段差部）が形成されているので、十分な厚さを有する電極マスクを用いることができるため、電極マスクの割れを防止することができる。
　また、絶縁プレート及び電極マスクを配置することにより、プラズマを電極間（シャワープレートと基板との間）に閉じ込めることができる。
　結果として、ナローギャッププロセスを行う場合であってもプラズマを電極間に閉じ込めることができる。
　さらに、基板とシャワープレートとの距離をナローギャップとして設定した場合であっても、絶縁プレートと電極マスクとの間には成膜ガスを排気するための十分な隙間が形成され、ガスの流れの面内均一性を安定化させることができ、膜厚を均一にすることができる。 Since the plasma processing apparatus is configured in this way, in the film formation space formed between the upper surface of the substrate and the surface of the shower plate, the first surface is an area where the upper surface of the substrate and the ejection holes of the shower plate are formed. The distance from 1 shower surface (jet hole formation surface) can be made shorter than before.
Therefore, the distance between the substrate and the shower plate can be shortened, and a narrow gap process can be realized.
In addition, since the step portion (shower step portion) is formed, an electrode mask having a sufficient thickness can be used, so that the electrode mask can be prevented from cracking.
Further, by arranging the insulating plate and the electrode mask, the plasma can be confined between the electrodes (between the shower plate and the substrate).
As a result, the plasma can be confined between the electrodes even when a narrow gap process is performed.
Furthermore, even when the distance between the substrate and the shower plate is set as a narrow gap, a sufficient gap for exhausting the film forming gas is formed between the insulating plate and the electrode mask. In-plane uniformity can be stabilized, and the film thickness can be made uniform.
　また、上記の第１態様及び第２態様のプラズマ処理装置においては、前記絶縁プレートは、前記基板の側面に当接される第１当接面と、前記基板の前記上面とは反対の裏面に当接される第２当接面を有する突出部とを含むことが好ましい。
　この構成においては、絶縁プレートは、第２ベース面に沿ってベース部材の中央に向けて突出する突出部を有する。 In the plasma processing apparatus of the first aspect and the second aspect, the insulating plate is provided on a first contact surface that is in contact with a side surface of the substrate and a back surface opposite to the upper surface of the substrate. It is preferable to include a protrusion having a second abutting surface to be abutted.
In this configuration, the insulating plate has a protrusion that protrudes along the second base surface toward the center of the base member.
　このようにプラズマ処理装置が構成されているので、ベース部材（第２ベース面）に絶縁プレートが載置され、ベース部材（第１ベース面）上と絶縁プレート上とに基板が配置された場合、基板の側面は第１当接面に接触し、基板の裏面は第２当接面に接触する。また、基板の鉛直方向から見て、基板と突出部とは重なっている。
　従って、シャワープレートから噴出された成膜ガスは、基板又は絶縁プレートに向けて供給され（噴射され）、成膜ガスがベース部材に接触することを防止することができる。
従って、シャワープレートとベース部材との間にプラズマが生じて、ベース部材に成膜されることを防止することができる。 Since the plasma processing apparatus is configured as described above, the insulating plate is placed on the base member (second base surface), and the substrate is disposed on the base member (first base surface) and the insulating plate. The side surface of the substrate contacts the first contact surface, and the back surface of the substrate contacts the second contact surface. Further, the substrate and the protruding portion overlap each other when viewed from the vertical direction of the substrate.
Therefore, the deposition gas ejected from the shower plate is supplied (injected) toward the substrate or the insulating plate, and the deposition gas can be prevented from coming into contact with the base member.
Therefore, it is possible to prevent plasma from being generated between the shower plate and the base member and forming a film on the base member.
　本発明によれば、基板の上面とシャワープレートの表面との間に形成される成膜空間において、基板の上面とシャワープレートの噴出孔が形成された領域である第１シャワー面（噴出孔形成面）との間の距離を最短にすることができる。
　従って、絶縁プレートの厚さ及び電極マスクの厚さに影響されず、基板とシャワープレートとの間の距離を設定することができ、ナローギャップを実現することができる。
　また、段差部（ベース段差部及びシャワー段差部）が形成されているので、十分な厚さを有する絶縁プレート及び電極マスクを用いることができ、絶縁プレート及び電極マスクの割れを防止することができる。
　また、絶縁プレート及び電極マスクを配置することにより、プラズマを電極間（シャワープレートと基板との間）に閉じ込めることができる。
　結果として、ナローギャッププロセスを行う場合であってもプラズマを電極間に閉じ込めることができる。 According to the present invention, in the film forming space formed between the upper surface of the substrate and the surface of the shower plate, the first shower surface (spout hole formation), which is the region where the upper surface of the substrate and the shower hole of the shower plate are formed. The distance to the surface) can be minimized.
Therefore, the distance between the substrate and the shower plate can be set without being affected by the thickness of the insulating plate and the thickness of the electrode mask, and a narrow gap can be realized.
Further, since the step portions (base step portion and shower step portion) are formed, an insulating plate and electrode mask having a sufficient thickness can be used, and cracking of the insulating plate and electrode mask can be prevented. .
Further, by arranging the insulating plate and the electrode mask, the plasma can be confined between the electrodes (between the shower plate and the substrate).
As a result, the plasma can be confined between the electrodes even when a narrow gap process is performed.
本発明の実施形態におけるプラズマＣＶＤ装置の概略構成図である。It is a schematic block diagram of the plasma CVD apparatus in embodiment of this invention. 本発明の実施形態におけるプラズマＣＶＤ装置の概略構成図であって、図１において符号Ａで示された部分を拡大して示した断面図である。It is a schematic block diagram of the plasma CVD apparatus in embodiment of this invention, Comprising: It is sectional drawing which expanded and showed the part shown by the code | symbol A in FIG. 従来のプラズマＣＶＤ装置の概略構成図であって、図２に対応する部分を示す断面図である。It is a schematic block diagram of the conventional plasma CVD apparatus, Comprising: It is sectional drawing which shows the part corresponding to FIG.
　以下、本発明に係るプラズマ処理装置の実施形態を図面に基づき説明する。
　また、以下の説明に用いる各図においては、各構成要素を図面上で認識し得る程度の大きさとするため、各構成要素の寸法及び比率を実際のものとは適宜に異ならせてある。
　また、本実施形態においては、プラズマＣＶＤ法を用いた成膜装置を説明する。 Hereinafter, embodiments of a plasma processing apparatus according to the present invention will be described with reference to the drawings.
In the drawings used for the following description, the dimensions and ratios of the respective components are appropriately changed from the actual ones in order to make the respective components large enough to be recognized on the drawings.
In this embodiment, a film forming apparatus using a plasma CVD method will be described.
　図１は、本実施形態における成膜装置の概略構成図である。
　図１に示すように、プラズマＣＶＤ法を実施する成膜装置１は、真空チャンバ２（チャンバ）を有している。
　真空チャンバ２の底部１１には、開口部が形成されている。この開口部には支柱２５が挿通され、支柱２５は真空チャンバ２の下部に配置されている。支柱２５の先端（真空チャンバ２内）には、ヒータ１６が内蔵された板状のベース部材３が接続されている。
真空チャンバ２の上部には、絶縁フランジ３１を介して電極フランジ４が取り付けられている。
また、真空チャンバ２には、排気管２７が接続されている。排気管２７の先端には、真空ポンプ２８が設けられている。真空ポンプ２８は、真空チャンバ２内が真空状態となるように減圧する。 FIG. 1 is a schematic configuration diagram of a film forming apparatus in the present embodiment.
As shown in FIG. 1, a film forming apparatus 1 that performs a plasma CVD method includes a vacuum chamber 2 (chamber).
An opening is formed in the bottom 11 of the vacuum chamber 2. A support column 25 is inserted into the opening, and the support column 25 is disposed in the lower portion of the vacuum chamber 2. A plate-like base member 3 with a built-in heater 16 is connected to the tip of the column 25 (in the vacuum chamber 2).
An electrode flange 4 is attached to the upper portion of the vacuum chamber 2 via an insulating flange 31.
Further, an exhaust pipe 27 is connected to the vacuum chamber 2. A vacuum pump 28 is provided at the tip of the exhaust pipe 27. The vacuum pump 28 reduces the pressure so that the inside of the vacuum chamber 2 is in a vacuum state.
　また、支柱２５は、真空チャンバ２の外部に設けられた昇降機構（不図示）に接続されており、基板１０の鉛直方向において上下に移動可能である。
つまり、支柱２５の先端に接続されているベース部材３は、上下方向に昇降可能に構成されている。
また、真空チャンバ２の外部においては、支柱２５の外周を覆うようにベローズ２６が設けられている。 The support column 25 is connected to an elevating mechanism (not shown) provided outside the vacuum chamber 2 and can move up and down in the vertical direction of the substrate 10.
In other words, the base member 3 connected to the tip of the support column 25 is configured to be able to move up and down.
A bellows 26 is provided outside the vacuum chamber 2 so as to cover the outer periphery of the support column 25.
　電極フランジ４は、絶縁フランジ３１上に載置され、板状に形成されている。
　成膜空間に面している電極フランジ４の面には、導電体３２が連結されている。導電体３２の先端には板状のシャワープレート５が取り付けられている。
そして、シャワープレート５と電極フランジ４との間に空間２４が形成されている。 The electrode flange 4 is placed on the insulating flange 31 and formed in a plate shape.
A conductor 32 is connected to the surface of the electrode flange 4 facing the film formation space. A plate-like shower plate 5 is attached to the tip of the conductor 32.
A space 24 is formed between the shower plate 5 and the electrode flange 4.
　また、電極フランジ４にはガス導入管７が接続されている。ガス導入管７は、真空チャンバ２の外部に設けられた成膜ガス供給部２１から空間２４に向けて原料ガス（例えば、ＳｉＨ４）を供給する。
　また、図２を参照して後述するように、シャワープレート５は、多数のガス噴出孔６が設けられている第１シャワー面５ａと、第１シャワー面５ａの周縁部に設けられた第２シャワー面５ｂと、第１シャワー面５ａと第２シャワー面５ｂとの間に設けられたシャワー段差部４２とを有する。ガス噴出孔６は、シャワープレート５を貫通している。空間２４内に導入された成膜ガスは、ガス噴出孔６を通じて真空チャンバ２内に供給される。 A gas introduction pipe 7 is connected to the electrode flange 4. The gas introduction pipe 7 supplies a source gas (for example, SiH 4 ) toward the space 24 from a film formation gas supply unit 21 provided outside the vacuum chamber 2.
Moreover, as will be described later with reference to FIG. 2, the shower plate 5 includes a first shower surface 5a provided with a large number of gas ejection holes 6 and a second portion provided at the peripheral portion of the first shower surface 5a. The shower surface 5b and the shower level | step-difference part 42 provided between the 1st shower surface 5a and the 2nd shower surface 5b are provided. The gas ejection hole 6 passes through the shower plate 5. The film forming gas introduced into the space 24 is supplied into the vacuum chamber 2 through the gas ejection holes 6.
　また、電極フランジ４とシャワープレート５とは、ともに導電材で構成されている。電極フランジ４は、真空チャンバ２の外部に設けられたＲＦ電源（高周波電源）９に接続されている。 The electrode flange 4 and the shower plate 5 are both made of a conductive material. The electrode flange 4 is connected to an RF power source (high frequency power source) 9 provided outside the vacuum chamber 2.
　さらに、真空チャンバ２には、ガス導入管７とは異なるガス導入管８が接続されている。
　ガス導入管８にはフッ素ガス供給部２２とラジカル源２３とが設けられている。ラジカル源２３は、フッ素ガス供給部２２から供給されたフッ素ガスを分解する。ガス導入管８は、フッ素ガスが分解されて得られたフッ素ラジカルを、真空チャンバ２内の成膜空間に供給する。 Further, a gas introduction pipe 8 different from the gas introduction pipe 7 is connected to the vacuum chamber 2.
The gas introduction pipe 8 is provided with a fluorine gas supply unit 22 and a radical source 23. The radical source 23 decomposes the fluorine gas supplied from the fluorine gas supply unit 22. The gas introduction pipe 8 supplies fluorine radicals obtained by decomposing fluorine gas to the film forming space in the vacuum chamber 2.
　ベース部材３は、表面が平坦に形成された略板状の部材である。図２を参照して後述するように、ベース部材３は、基板１０が載置される第１ベース面３３と、第１ベース面３３の周縁部に設けられた第２ベース面３３ａと、第１ベース面３３と第２ベース面３３ａとの間に設けられたベース段差部３４とを有し、真空チャンバ２内に配置されている。
　ベース部材３は、接地電極として機能し、例えばアルミニウム合金で構成されている。なお、ベース部材３の材料としては、剛性を有し、耐食性及び耐熱性を有する材料であれば、上記の材料以外の材料が採用されてもよい。
　基板１０がベース部材３の第１ベース面３３上に配置されると、基板１０とシャワープレート５とは互いに近接して平行になる。
　ベース部材３上に基板１０が配置された状態で、ガス噴出孔６を通じて成膜ガスは基板１０の表面に向けて成膜空間に供給される。 The base member 3 is a substantially plate-like member having a flat surface. As will be described later with reference to FIG. 2, the base member 3 includes a first base surface 33 on which the substrate 10 is placed, a second base surface 33 a provided at the peripheral edge of the first base surface 33, A base step portion 34 provided between the first base surface 33 and the second base surface 33 a is disposed in the vacuum chamber 2.
The base member 3 functions as a ground electrode and is made of, for example, an aluminum alloy. In addition, as a material of the base member 3, materials other than said material may be employ | adopted if it is a material which has rigidity and has corrosion resistance and heat resistance.
If the board | substrate 10 is arrange | positioned on the 1st base surface 33 of the base member 3, the board | substrate 10 and the shower plate 5 will adjoin and become parallel.
In a state where the substrate 10 is disposed on the base member 3, the deposition gas is supplied to the deposition space through the gas ejection holes 6 toward the surface of the substrate 10.
　また、ベース部材３の内部には、電源線に接続されたヒータ１６が設けられている。ヒータ１６によってベース部材３の温度が所定の温度に調整される。ヒータ１６の電源線は、ベース部材３の鉛直方向から見たベース部材３の略中央部、かつ、ベース部材３の底面１７から突出され、支柱２５の内部に挿通され、真空チャンバ２の外部へと導かれている。
　そして、ヒータ１６は、真空チャンバ２の外部において電源（不図示）と接続され、ベース部材３の温度を調節する。 In addition, a heater 16 connected to a power supply line is provided inside the base member 3. The temperature of the base member 3 is adjusted to a predetermined temperature by the heater 16. A power line of the heater 16 protrudes from a substantially central portion of the base member 3 as viewed from the vertical direction of the base member 3 and from the bottom surface 17 of the base member 3, is inserted into the support column 25, and goes to the outside of the vacuum chamber 2. It is led with.
The heater 16 is connected to a power source (not shown) outside the vacuum chamber 2 and adjusts the temperature of the base member 3.
　また、ベース部材３と真空チャンバ２との間を接続する複数アースプレート３０が真空チャンバ２の底部１１において略等間隔に配置されている。
このアースプレート３０は、フレキシブルな金属プレートで形成されており、例えば、ニッケル系合金又はアルミ合金などで構成されている。 In addition, a plurality of ground plates 30 connecting the base member 3 and the vacuum chamber 2 are arranged at substantially equal intervals on the bottom 11 of the vacuum chamber 2.
The earth plate 30 is made of a flexible metal plate, and is made of, for example, a nickel-based alloy or an aluminum alloy.
　図２は、図１の符号Ａで示された部分が拡大して示された断面図である。
　なお、以下の説明において、「低い位置」とは、成膜空間の位置から真空チャンバ２の底部１１に向けた方向において、一方の位置よりも他方の位置が低いことを意味する。また、「高い位置」とは、成膜空間の位置から電極フランジ４に向けた方向において一方の位置よりも他方の位置が高いことを意味する。 FIG. 2 is an enlarged cross-sectional view of the portion indicated by the symbol A in FIG.
In the following description, “low position” means that the other position is lower than one position in the direction from the position of the film formation space toward the bottom 11 of the vacuum chamber 2. Further, “high position” means that the other position is higher than the one position in the direction from the position of the film formation space toward the electrode flange 4.
　図２に示すように、ベース部材３の第１ベース面３３における周縁部には、第１ベース面３３よりも低い位置に形成された第２ベース面３３ａが設けられている。第１ベース面３３と第２ベース面３３ａとの間には、ベース段差部３４が形成されている。第１ベース面３３の水平方向におけるベース段差部３４の位置は、基板１０の長さ（直径）よりも第１ベース面３３の長さ（直径）が小さくなるように決定されている。即ち、基板１０がベース部材３の第１ベース面３３上に載置された場合、基板１０の水平方向における基板１０の周縁部の位置がベース段差部３４から突出している。換言すれば、基板１０の周縁部が第１ベース面３３の外側に位置している。
つまり、ベース段差部３４は基板１０の裏面１０ｃに当接する位置に形成されている。 As shown in FIG. 2, a second base surface 33 a formed at a position lower than the first base surface 33 is provided on the peripheral edge portion of the first base surface 33 of the base member 3. A base step portion 34 is formed between the first base surface 33 and the second base surface 33a. The position of the base step portion 34 in the horizontal direction of the first base surface 33 is determined so that the length (diameter) of the first base surface 33 is smaller than the length (diameter) of the substrate 10. That is, when the substrate 10 is placed on the first base surface 33 of the base member 3, the position of the peripheral portion of the substrate 10 in the horizontal direction of the substrate 10 protrudes from the base step portion 34. In other words, the peripheral edge of the substrate 10 is located outside the first base surface 33.
That is, the base step portion 34 is formed at a position in contact with the back surface 10 c of the substrate 10.
　また、ベース段差部３４を介して第１ベース面３３よりも低い位置に形成された第２ベース面３３ａには、絶縁プレート３５が載置されている。絶縁プレート３５は、基板１０の周縁部に沿ってフレーム状に形成されている。
絶縁プレート３５の材料としては、例えば絶縁物であるアルミナが採用される。
　絶縁プレート３５の厚さ（高さ）は、第２ベース面３３ａから、第１ベース面３３に載置された基板１０の上面１０までの高さ以下である。本実施形態においては、第２ベース面３３ａに絶縁プレート３５が載置されたときに、絶縁プレート３５の表面３５ｃの位置と基板１０の上面１０ａの位置とが基板１０の鉛直方向において一致している。
　また、絶縁プレート３５は、第２ベース面３３ａに絶縁プレート３５が載置されたときに、基板１０の鉛直方向において少なくとも第２ベース面３３ａを全て覆う大きさを有している。
　また、絶縁プレート３５は、基板１０の側面１０ｂに当接される第１当接面３５ａと、基板１０の上面１０ａとは反対の裏面１０ｃに当接される第２当接面３５ｄとを含む。換言すれば、絶縁プレート３５は、第２ベース面３３ａに沿ってベース部材３の中央に向けて突出する突出部３５ｂを有する。突出部３５ｂは、基板１０の裏面１０ｃの下に位置し、基板１０の裏面１０ｃに当接している。また、突出部３５ｂは、ベース段差部３４に略当接している。
　なお、本実施形態においては、絶縁プレート３５は、水平方向にベース部材３の端部よりも突出して形成され、ベース部材３の周縁部（第２ベース面３３ａ）に設けられている。絶縁プレート３５の端部は、ベース部材３を支持する支持部材３６に支持されている。
　なお、支持部材３６に対向する真空チャンバ２の内面には、例えば、アルミナで形成された絶縁物３７が取り付けられている。 An insulating plate 35 is placed on the second base surface 33 a formed at a position lower than the first base surface 33 via the base step portion 34. The insulating plate 35 is formed in a frame shape along the peripheral edge of the substrate 10.
As a material of the insulating plate 35, for example, alumina which is an insulator is employed.
The thickness (height) of the insulating plate 35 is not more than the height from the second base surface 33 a to the upper surface 10 of the substrate 10 placed on the first base surface 33. In the present embodiment, when the insulating plate 35 is placed on the second base surface 33a, the position of the surface 35c of the insulating plate 35 and the position of the upper surface 10a of the substrate 10 coincide with each other in the vertical direction of the substrate 10. Yes.
The insulating plate 35 has a size that covers at least the second base surface 33a in the vertical direction of the substrate 10 when the insulating plate 35 is placed on the second base surface 33a.
The insulating plate 35 includes a first contact surface 35a that contacts the side surface 10b of the substrate 10 and a second contact surface 35d that contacts the back surface 10c opposite to the upper surface 10a of the substrate 10. . In other words, the insulating plate 35 has the protruding portion 35b protruding toward the center of the base member 3 along the second base surface 33a. The protruding portion 35 b is located below the back surface 10 c of the substrate 10 and is in contact with the back surface 10 c of the substrate 10. Further, the protruding portion 35 b is substantially in contact with the base step portion 34.
In the present embodiment, the insulating plate 35 is formed so as to protrude from the end of the base member 3 in the horizontal direction, and is provided on the peripheral edge (second base surface 33a) of the base member 3. An end portion of the insulating plate 35 is supported by a support member 36 that supports the base member 3.
Note that an insulator 37 made of alumina, for example, is attached to the inner surface of the vacuum chamber 2 facing the support member 36.
　一方、図２に示すように、シャワープレート５の第１シャワー面５ａにおける周縁部には、第１シャワー面５ａよりも高い位置に形成された第２シャワー面５ｂが設けられている。第１シャワー面５ａと第２シャワー面５ｂとの間には、シャワー段差部４２が形成されている。
　また、シャワー段差部４２を介して第１シャワー面５ａより高い位置に形成された第２シャワー面５ｂには、フレーム状に形成された電極マスク４３が載置されている。
電極マスク４３の材料としては、例えば絶縁物であるアルミナが採用される。電極マスク４３は、絶縁プレート３５に対向するように第２シャワー面５ｂ上に配置されている。
　電極マスク４３の厚さ（高さ）は、第２シャワー面５ｂから第１シャワー面５ａまでの高さ以下である。本実施形態においては、
第２シャワー面５ｂに電極マスク４３が載置されたときに、電極マスク４３の表面４３ａの位置と第１シャワー面５ａの位置とがシャワープレート５の鉛直方向において一致している。
　また、電極マスク４３は、第２シャワー面５ｂに電極マスク４３が載置されたときに、シャワープレート５の鉛直方向において少なくとも第２シャワー面５ｂを全て覆う大きさを有している。
　なお、本実施形態においては、電極マスク４３は、水平方向にシャワープレート５の端部よりも突出して形成されている。また、電極マスク４３は、シャワープレート５を支持する支持部材４４及び真空チャンバ２と絶縁フランジ３１との間に設けられた支持部材４５の表面を覆う大きさを有する。 On the other hand, as shown in FIG. 2, a second shower surface 5 b formed at a position higher than the first shower surface 5 a is provided at the peripheral edge portion of the first shower surface 5 a of the shower plate 5. A shower step portion 42 is formed between the first shower surface 5a and the second shower surface 5b.
An electrode mask 43 formed in a frame shape is placed on the second shower surface 5b formed at a position higher than the first shower surface 5a via the shower step portion 42.
As a material of the electrode mask 43, for example, alumina which is an insulator is employed. The electrode mask 43 is disposed on the second shower surface 5 b so as to face the insulating plate 35.
The thickness (height) of the electrode mask 43 is not more than the height from the second shower surface 5b to the first shower surface 5a. In this embodiment,
When the electrode mask 43 is placed on the second shower surface 5b, the position of the surface 43a of the electrode mask 43 and the position of the first shower surface 5a coincide with each other in the vertical direction of the shower plate 5.
The electrode mask 43 has a size that covers at least the second shower surface 5b in the vertical direction of the shower plate 5 when the electrode mask 43 is placed on the second shower surface 5b.
In the present embodiment, the electrode mask 43 is formed so as to protrude from the end of the shower plate 5 in the horizontal direction. The electrode mask 43 has a size that covers the surface of the support member 44 that supports the shower plate 5 and the surface of the support member 45 provided between the vacuum chamber 2 and the insulating flange 31.
　次に、成膜装置１を用いて基板１０に成膜する場合の作用について説明する。
　上記のように構成された成膜装置１を用いて基板１０の表面に薄膜を成膜する前に、真空ポンプ２８を用いて真空チャンバ２内を減圧する。
　真空チャンバ２内が真空に維持された状態で、基板１０は真空チャンバ２内に搬入され、ベース部材３上に載置される。
　ここで、基板１０を載置する前は、ベース部材３は真空チャンバ２内の下側に位置している。
つまり、基板１０が搬入される前においては、ベース部材３とシャワープレート５との間隔が広くなっているので、ロボットアーム（不図示）を用いて基板１０をベース部材３上に容易に載置することができる。
　基板１０がベース部材３上に載置された後には、昇降装置（不図示）が起動し、支柱２５が上方へ押し上げられ、ベース部材３上に載置された基板１０も上方へ移動する。これによって、適切に成膜を行うために必要な間隔になるようにシャワープレート５と基板１０との間隔が所望に決定され、この間隔が維持される。
　このとき、基板１０の鉛直方向において、絶縁プレート３５の表面３５ｃの位置と基板１０の上面１０ａの位置とが一致し、電極マスク４３の表面４３ａの位置と第１シャワー面５ａの位置とが一致している。このため、絶縁プレート３５と電極マスク４３とが接触することなく、基板１０とシャワープレート５との間隔を小さくすることができ、ナローギャップ（３～１０ｍｍ）を実現することができる。
　その後、ガス導入管７から成膜ガス（原料ガス）を導入して、ガス噴出孔６から真空チャンバ２（成膜空間）内に成膜ガスが供給される。 Next, an operation when a film is formed on the substrate 10 using the film forming apparatus 1 will be described.
Before forming a thin film on the surface of the substrate 10 using the film forming apparatus 1 configured as described above, the vacuum chamber 2 is decompressed using the vacuum pump 28.
The substrate 10 is carried into the vacuum chamber 2 and placed on the base member 3 while the vacuum chamber 2 is maintained in a vacuum.
Here, before the substrate 10 is placed, the base member 3 is positioned on the lower side in the vacuum chamber 2.
That is, before the substrate 10 is carried in, the distance between the base member 3 and the shower plate 5 is wide, so that the substrate 10 can be easily placed on the base member 3 using a robot arm (not shown). can do.
After the substrate 10 is placed on the base member 3, an elevating device (not shown) is activated, the column 25 is pushed upward, and the substrate 10 placed on the base member 3 also moves upward. As a result, the interval between the shower plate 5 and the substrate 10 is determined as desired so that the interval necessary for proper film formation is achieved, and this interval is maintained.
At this time, in the vertical direction of the substrate 10, the position of the surface 35c of the insulating plate 35 coincides with the position of the upper surface 10a of the substrate 10, and the position of the surface 43a of the electrode mask 43 and the position of the first shower surface 5a are the same. I'm doing it. For this reason, the gap between the substrate 10 and the shower plate 5 can be reduced without the insulating plate 35 and the electrode mask 43 being in contact with each other, and a narrow gap (3 to 10 mm) can be realized.
Thereafter, a film forming gas (raw material gas) is introduced from the gas introduction pipe 7, and the film forming gas is supplied into the vacuum chamber 2 (film forming space) from the gas ejection holes 6.
　絶縁フランジ３１を介して電極フランジ４と真空チャンバ２とは電気的に絶縁され、かつ、真空チャンバ２が接地電位に接続された状態で、ＲＦ電源９を起動して電極フランジ４に高周波電圧が印加される。
　このとき、シャワープレート５とベース部材３との間に高周波電圧が印加されて放電が生じ、電極フランジ４と基板１０の表面との間にプラズマが発生する。
　こうして発生したプラズマ内で成膜ガスが分解され、基板１０の表面で気相成長反応が起こることにより、基板１０の表面に薄膜が成膜される。 In a state where the electrode flange 4 and the vacuum chamber 2 are electrically insulated via the insulating flange 31 and the vacuum chamber 2 is connected to the ground potential, the RF power source 9 is activated and a high frequency voltage is applied to the electrode flange 4. Applied.
At this time, a high frequency voltage is applied between the shower plate 5 and the base member 3 to generate a discharge, and plasma is generated between the electrode flange 4 and the surface of the substrate 10.
The deposition gas is decomposed in the plasma generated in this way, and a vapor phase growth reaction occurs on the surface of the substrate 10, whereby a thin film is formed on the surface of the substrate 10.
　また、上記のような成膜工程が何度か繰り返されると、真空チャンバ２の内壁面などに成膜材料が付着するため、真空チャンバ２内は定期的にクリーニングされる。クリーニング工程においては、フッ素ガス供給部２２から供給されたフッ素ガスがラジカル源２３によって分解され、フッ素ラジカルが生じ、フッ素ラジカルが真空チャンバ２に接続されたガス導入管８を通り、真空チャンバ２内に供給される。
　このように真空チャンバ２内の成膜空間にフッ素ラジカルを供給することによって、化学反応が生じ、例えば、シャワープレート５の第１シャワー面５ａ，電極マスク４３の表面４３ａ，又は絶縁プレート３５の表面３５ｃ等に付着された付着物が除去される。 Further, when the film forming process as described above is repeated several times, the film forming material adheres to the inner wall surface of the vacuum chamber 2 and the like, so that the inside of the vacuum chamber 2 is periodically cleaned. In the cleaning process, the fluorine gas supplied from the fluorine gas supply unit 22 is decomposed by the radical source 23 to generate fluorine radicals. The fluorine radicals pass through the gas introduction pipe 8 connected to the vacuum chamber 2 and pass through the vacuum chamber 2. To be supplied.
By supplying fluorine radicals to the film formation space in the vacuum chamber 2 in this way, a chemical reaction occurs. For example, the first shower surface 5a of the shower plate 5, the surface 43a of the electrode mask 43, or the surface of the insulating plate 35 Deposits adhered to 35c and the like are removed.
　本実施形態によれば、絶縁プレート３５が載置される領域である第２ベース面３３ａと、基板１０が載置される領域である第１ベース面３３との間にベース段差部３４が形成されている。また、基板１０及び絶縁プレート３５がベース部材３に載置された状態で、絶縁プレート３５の表面３５ｃの位置と基板１０の上面１０ａの位置とが基板１０の鉛直方向において一致している。また、電極マスク４３が載置される領域である第２シャワー面５ｂと、複数の噴出孔６が形成されている領域である第１シャワー面５ａとの間にシャワー段差部４２が形成されている。また、電極マスク４３がシャワープレート５に載置された状態で、電極マスク４３の表面４３ａの位置と第１シャワー面５ａの位置とがシャワープレート５の鉛直方向において一致している。
　従って、基板１０の上面１０ａとシャワープレート５の第１シャワー面５ａとの間に形成される成膜空間において、基板１０の上面１０ａとシャワープレート５の第１シャワー面５ａとの間の距離を最短にすることができる。
　従って、絶縁プレートの厚さ３５及び電極マスク４３の厚さに影響されず、基板１０とシャワープレート５との間の距離を設定することができ、ナローギャップを実現することができる。
　また、段差部３４，４２（ベース段差部及びシャワー段差部）が形成されているので、十分な厚さを有する絶縁プレート３５及び電極マスク４３を用いることができ、絶縁プレート３５及び電極マスク４３の割れを防止することができる。
　また、絶縁プレート３５及び電極マスク４３を配置することにより、プラズマを電極間（シャワープレート５と基板１０との間）に閉じ込めることができる。
　結果として、ナローギャッププロセスを行う場合であってもプラズマを電極間に閉じ込めることができる。
　さらに、基板１０とシャワープレート５との距離をナローギャップとして設定した場合であっても、絶縁プレート３５と電極マスク４３との間には成膜ガスを排気するための十分な隙間が形成され、ガスの流れの面内均一性を安定化させることができ、膜厚を均一にすることができる。
　つまり、このように構成されたプラズマ処理装置において、μｃ－Ｓｉの成膜を行うことができる。 According to the present embodiment, the base step portion 34 is formed between the second base surface 33a, which is a region where the insulating plate 35 is placed, and the first base surface 33, which is a region where the substrate 10 is placed. Has been. Further, in a state where the substrate 10 and the insulating plate 35 are placed on the base member 3, the position of the surface 35 c of the insulating plate 35 and the position of the upper surface 10 a of the substrate 10 coincide with each other in the vertical direction of the substrate 10. In addition, a shower step portion 42 is formed between the second shower surface 5b, which is a region where the electrode mask 43 is placed, and the first shower surface 5a, which is a region where a plurality of ejection holes 6 are formed. Yes. Further, in a state where the electrode mask 43 is placed on the shower plate 5, the position of the surface 43 a of the electrode mask 43 and the position of the first shower surface 5 a coincide with each other in the vertical direction of the shower plate 5.
Therefore, in the film forming space formed between the upper surface 10a of the substrate 10 and the first shower surface 5a of the shower plate 5, the distance between the upper surface 10a of the substrate 10 and the first shower surface 5a of the shower plate 5 is set as follows. Can be as short as possible.
Therefore, the distance between the substrate 10 and the shower plate 5 can be set without being affected by the thickness 35 of the insulating plate and the thickness of the electrode mask 43, and a narrow gap can be realized.
Further, since the step portions 34 and 42 (base step portion and shower step portion) are formed, the insulating plate 35 and the electrode mask 43 having sufficient thickness can be used. Cracking can be prevented.
Further, by disposing the insulating plate 35 and the electrode mask 43, the plasma can be confined between the electrodes (between the shower plate 5 and the substrate 10).
As a result, the plasma can be confined between the electrodes even when a narrow gap process is performed.
Further, even when the distance between the substrate 10 and the shower plate 5 is set as a narrow gap, a sufficient gap is formed between the insulating plate 35 and the electrode mask 43 for exhausting the film forming gas, The in-plane uniformity of the gas flow can be stabilized and the film thickness can be made uniform.
That is, the μc-Si film can be formed in the plasma processing apparatus configured as described above.
　また、絶縁プレート３５は、基板１０の側面１０ｂに当接される第１当接面３５ａと、基板１０の裏面１０ｃに当接される第２当接面３５ｄと、第２ベース面３３ａに沿ってベース部材３の中央に向けて突出する突出部３５ｂを有する。このような構成を有する絶縁プレート３５がベース部材３に載置され、第１ベース面３３上に基板１０が配置されると、基板１０の裏面１０ｃは第２当接面に接触する。また、基板１０の鉛直方向から見て、基板１０と突出部３５ｂとは重なる。
　従って、シャワープレート５から供給された成膜ガスは基板１０又は絶縁プレート３５に接触するため、ベース部材３に成膜ガスが直接接触することを防止することができる。
　従って、シャワープレート５とベース部材３との間にプラズマが生じて、ベース部材３の表面に成膜されることを防止することができる。 The insulating plate 35 extends along the first contact surface 35a that contacts the side surface 10b of the substrate 10, the second contact surface 35d that contacts the back surface 10c of the substrate 10, and the second base surface 33a. And a protruding portion 35b protruding toward the center of the base member 3. When the insulating plate 35 having such a configuration is placed on the base member 3 and the substrate 10 is disposed on the first base surface 33, the back surface 10c of the substrate 10 contacts the second contact surface. Further, when viewed from the vertical direction of the substrate 10, the substrate 10 and the protruding portion 35b overlap.
Accordingly, since the film forming gas supplied from the shower plate 5 comes into contact with the substrate 10 or the insulating plate 35, it is possible to prevent the film forming gas from coming into direct contact with the base member 3.
Therefore, it is possible to prevent plasma from being generated between the shower plate 5 and the base member 3 and forming a film on the surface of the base member 3.
　また、電極マスク４３は、水平方向にシャワープレート５の端部よりも突出して形成されており、シャワープレート５を支持する支持部材４４及び真空チャンバ２と絶縁フランジ３１との間に設けられた支持部材４５の表面を覆う大きさを有する。このような電極マスク４３を用いることにより、シャワープレート５の近傍で生じたパーティクルが基板１０上に落下することを抑制することができる。 The electrode mask 43 is formed so as to protrude from the end of the shower plate 5 in the horizontal direction, and the support member 44 that supports the shower plate 5 and the support provided between the vacuum chamber 2 and the insulating flange 31. The surface of the member 45 is covered. By using such an electrode mask 43, it is possible to prevent particles generated in the vicinity of the shower plate 5 from falling on the substrate 10.
　次に、上述した成膜装置１を用いてμｃ－Ｓｉを成膜する実施例について説明する。
　表１に示すように、ＲＦ電源９から印加される電力周波数は、２７．１２ＭＨｚに設定し、ＲＦＰｏｗｅｒ密度を１．２Ｗ／ｃｍ２に設定した。
　また、シャワープレート５と基板１０との間隔を７ｍｍ（ナローギャップ）に設定し、成膜空間の圧力を１４００Ｐａに設定した。
　そして、成膜ガスのＳｉＨ４の流量（ｓｌｍ）とＨ２の流量（ｓｌｍ）との比率を１：１５に設定し、μｃ－Ｓｉを基板１０上に成膜した。 Next, an example of forming μc-Si using the film forming apparatus 1 described above will be described.
As shown in Table 1, the power frequency applied from the RF power source 9 was set to 27.12 MHz, and the RFPower density was set to 1.2 W / cm 2 .
In addition, the distance between the shower plate 5 and the substrate 10 was set to 7 mm (narrow gap), and the pressure in the film formation space was set to 1400 Pa.
Then, the ratio of the flow rate (slm) of SiH 4 and the flow rate of H 2 (slm) as the deposition gas was set to 1:15, and μc-Si was deposited on the substrate 10.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
　その結果、成膜速度は２．１ｎｍ／ｓｅｃであり、膜厚分布（膜厚均一性：ｔｈｉｃｋｎｅｓｓ　ｕｎｉｆｏｒｍｉｔｙ）が１１％であるμｃ－Ｓｉの膜を成膜することができた。 As a result, a film formation rate was 2.1 nm / sec, and a μc-Si film having a film thickness distribution (thickness uniformity) of 11% could be formed.
　次に、図３に示すような従来の成膜装置を用いてμｃ－Ｓｉを成膜する比較例について説明する。
　表２に示すように、ＲＦ電源から印加する電力周波数を２７．１２ＭＨｚに設定し、ＲＦＰｏｗｅｒ密度を１．２Ｗ／ｃｍ２に設定した。
　また、シャワープレート５と基板１０との間隔を１１ｍｍに設定し、成膜空間の圧力を７００Ｐａに設定した。
　そして、成膜ガスのＳｉＨ４の流量（ｓｌｍ）とＨ２の流量（ｓｌｍ）との比率を１：１５に設定し、μｃ－Ｓｉを基板１０に成膜した。 Next, a comparative example in which μc-Si is formed using a conventional film forming apparatus as shown in FIG. 3 will be described.
As shown in Table 2, the power frequency applied from the RF power source was set to 27.12 MHz, and the RFPower density was set to 1.2 W / cm 2 .
Further, the distance between the shower plate 5 and the substrate 10 was set to 11 mm, and the pressure in the film formation space was set to 700 Pa.
Then, the ratio of the flow rate (slm) of SiH 4 and the flow rate of H 2 (slm) as the deposition gas was set to 1:15, and μc-Si was deposited on the substrate 10.
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000002
　その結果、成膜速度は１．１ｎｍ／ｓｅｃであり、膜厚分布（膜厚均一性）が２３％であるμｃ－Ｓｉの膜が成膜された。 As a result, a film formation rate was 1.1 nm / sec, and a film of μc-Si having a film thickness distribution (film thickness uniformity) of 23% was formed.
　従って、本実施形態のように、絶縁プレート３５の表面３５ｃの位置と基板１０の上面１０ａの位置とが基板１０の鉛直方向において一致し、かつ、電極マスク４３の表面４３ａの位置と第１シャワー面５ａの位置とがシャワープレート５の鉛直方向において一致しているプラズマ処理装置を用いることにより、成膜速度を高速化でき、優れた膜厚分布（膜厚均一性）を有し、高品質なμｃ－Ｓｉを成膜することができる。 Therefore, as in the present embodiment, the position of the surface 35c of the insulating plate 35 and the position of the upper surface 10a of the substrate 10 coincide in the vertical direction of the substrate 10, and the position of the surface 43a of the electrode mask 43 and the first shower. By using a plasma processing apparatus in which the position of the surface 5a coincides in the vertical direction of the shower plate 5, the film forming speed can be increased, the film thickness distribution (film thickness uniformity) is excellent, and the quality is high. An appropriate μc-Si film can be formed.
　なお、本発明の技術範囲は、上記実施形態に限定されることなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることが可能である。
　すなわち、本実施形態で述べた具体的な材料又は構成等は本発明の一例であり、適宜変更が可能である。 The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
That is, the specific materials or configurations described in this embodiment are examples of the present invention, and can be changed as appropriate.
　例えば、本実施形態においては、絶縁プレート３５の表面３５ｃの位置と基板１０の上面１０ａの位置とが基板１０の鉛直方向において一致している構成を説明したが、基板１０の上面の位置よりも絶縁プレート３５の表面３５ｃの位置が低い構成を採用してもよい。即ち、絶縁プレート３５の厚さ（高さ）は、第２ベース面３３ａから、第１ベース面３３に載置された基板１０の上面１０までの高さ以下である。
　同様に、本実施形態においては、電極マスク４３の表面４３ａの位置と第１シャワー面５ａの位置とがシャワープレート５の鉛直方向において一致している構成を説明したが、第１シャワー面５ａの位置よりも電極マスク４３の表面４３ａの位置が高い構成を採用してもよい。即ち、電極マスク４３の厚さ（高さ）は、第２シャワー面５ｂから第１シャワー面５ａまでの高さ以下である。  For example, in the present embodiment, the configuration in which the position of the surface 35c of the insulating plate 35 and the position of the upper surface 10a of the substrate 10 coincide in the vertical direction of the substrate 10 has been described. A configuration in which the position of the surface 35c of the insulating plate 35 is low may be employed. That is, the thickness (height) of the insulating plate 35 is equal to or less than the height from the second base surface 33 a to the upper surface 10 of the substrate 10 placed on the first base surface 33.
Similarly, in the present embodiment, the configuration in which the position of the surface 43a of the electrode mask 43 and the position of the first shower surface 5a coincide in the vertical direction of the shower plate 5 has been described. A configuration in which the position of the surface 43a of the electrode mask 43 is higher than the position may be employed. That is, the thickness (height) of the electrode mask 43 is not more than the height from the second shower surface 5b to the first shower surface 5a.
　また、本実施形態においては、絶縁プレート３５の表面３５ｃの位置と基板１０の上面１０ａの位置とが基板１０の鉛直方向において一致している第１構成と、電極マスク４３の表面４３ａの位置と第１シャワー面５ａの位置とがシャワープレート５の鉛直方向において一致している第２構成とが組み合わされたプラズマ処理装置について説明したが、本発明は、この構成に限定されない。第１構成及び第２構成のうちいずれか一方の構成と、従来の構成とが組み合わされたプラズマ処理装置が採用されてもよい。
　つまり、基板１０とシャワープレート５との間隔がナローギャップ（１０ｍｍ以下）を実現するように設定されていれば、上述した効果が得られる。また、絶縁プレート３５と電極マスク４３との間に、成膜ガスをスムーズ排気するための十分な隙間が形成されていれば、上述した効果が得られる。 In the present embodiment, the first configuration in which the position of the surface 35c of the insulating plate 35 and the position of the upper surface 10a of the substrate 10 coincide with each other in the vertical direction of the substrate 10, and the position of the surface 43a of the electrode mask 43. Although the plasma processing apparatus was described in which the second configuration in which the position of the first shower surface 5a coincides in the vertical direction of the shower plate 5 has been described, the present invention is not limited to this configuration. A plasma processing apparatus in which one of the first configuration and the second configuration is combined with the conventional configuration may be employed.
That is, if the distance between the substrate 10 and the shower plate 5 is set so as to realize a narrow gap (10 mm or less), the above-described effects can be obtained. In addition, the above-described effects can be obtained if a sufficient gap is formed between the insulating plate 35 and the electrode mask 43 to smoothly exhaust the film forming gas.
　さらに、本実施形態において、絶縁プレート３５の表面３５ｃと基板１０の上面１０ａとの境界部、及び電極マスク４３の表面４３ａとシャワープレート５の第１シャワー面５ａとの境界部においては、上面と側面とが略直角に交わるように形成されているが、この境界部における上面と側面との間に曲面を形成してもよい。
　このように境界部に曲面を形成することにより、異常放電の発生を抑制することができる。 Further, in the present embodiment, the boundary between the surface 35c of the insulating plate 35 and the upper surface 10a of the substrate 10, and the boundary between the surface 43a of the electrode mask 43 and the first shower surface 5a of the shower plate 5, Although the side surface is formed so as to intersect at a substantially right angle, a curved surface may be formed between the upper surface and the side surface at the boundary.
By forming a curved surface at the boundary portion in this way, it is possible to suppress the occurrence of abnormal discharge.
　以上詳述したように、本発明は、ナローギャッププロセスを行う場合であってもプラズマを電極間に閉じ込めることができるプラズマ処理装置に有用である。 As described in detail above, the present invention is useful for a plasma processing apparatus capable of confining plasma between electrodes even when a narrow gap process is performed.
　１…成膜装置（プラズマ処理装置）　２…真空チャンバ（チャンバ）　３…ベース部材　５…シャワープレート　５ａ…第１シャワー面　５ｂ…第２シャワー面　６…ガス噴出孔　１０…基板　１０ａ…上面　１０ｂ…側面　１０ｃ…裏面　３３…第１ベース面　３３ａ…第２ベース面　３４…ベース段差部　３５…絶縁プレート　３５ａ…第１当接面　３５ｂ…突出部　３５ｃ…表面　３５ｄ…第２当接面　４２…シャワー段差部　４３…電極マスク　４３ａ…表面。
　 DESCRIPTION OF SYMBOLS 1 ... Film-forming apparatus (plasma processing apparatus) 2 ... Vacuum chamber (chamber) 3 ... Base member 5 ... Shower plate 5a ... 1st shower surface 5b ... 2nd shower surface 6 ... Gas ejection hole 10 ... Substrate 10a ... Upper surface 10b ... Side surface 10c ... Back surface 33 ... First base surface 33a ... Second base surface 34 ... Base step portion 35 ... Insulating plate 35a ... First contact surface 35b ... Projection portion 35c ... Surface 35d ... Second contact surface 42 ... Shower step Part 43 ... Electrode mask 43a ... Surface.

Claims (5)

  1. 　プラズマ処理装置であって、
    　プロセスガスが導入され、前記プロセスガスからなるプラズマが生成されるチャンバと、　
    基板が載置される第１ベース面，前記第１ベース面の周縁部に設けられた第２ベース面，及び前記第１ベース面と前記第２ベース面との間に設けられたベース段差部を有し、前記チャンバ内に配置されたベース部材と、
    　前記第２ベース面から前記第１ベース面に載置された前記基板の上面までの高さ以下である高さを有し、前記第２ベース面上に配置され、絶縁物質で形成された絶縁プレートと、
    噴出孔が形成されている第１シャワー面，前記第１シャワー面の周縁部に設けられた第２シャワー面，及び前記第１シャワー面と前記第２シャワー面との間に設けられたシャワー段差部を有し、前記基板に向けて前記プロセスガスを供給し、前記チャンバ内に配置されたシャワープレートと、
    　前記第２シャワー面から前記第１シャワー面までの高さ以下である高さを有し、前記絶縁プレートに対向するように前記第２シャワー面上に配置され、絶縁物質で形成された電極マスクと、
    　を含むことを特徴とするプラズマ処理装置。     A plasma processing apparatus,
    A chamber in which a process gas is introduced and a plasma composed of the process gas is generated;
    A first base surface on which a substrate is placed, a second base surface provided at a peripheral portion of the first base surface, and a base step portion provided between the first base surface and the second base surface A base member disposed in the chamber;
    An insulation having a height equal to or less than a height from the second base surface to an upper surface of the substrate placed on the first base surface, and disposed on the second base surface and formed of an insulating material Plates,
    A first shower surface in which an ejection hole is formed, a second shower surface provided at a peripheral portion of the first shower surface, and a shower step provided between the first shower surface and the second shower surface A shower plate disposed in the chamber, and supplying the process gas toward the substrate;
    An electrode mask having a height equal to or less than a height from the second shower surface to the first shower surface, disposed on the second shower surface so as to face the insulating plate, and formed of an insulating material. When,
    A plasma processing apparatus comprising:
  2. 　請求項１に記載のプラズマ処理装置であって、
    　前記絶縁プレートは、前記基板の側面に当接される第１当接面と、前記基板の前記上面とは反対の裏面に当接される第２当接面を有する突出部とを含むことを特徴とするプラズマ処理装置。     The plasma processing apparatus according to claim 1,
    The insulating plate includes a first abutting surface that abuts against a side surface of the substrate and a protrusion having a second abutting surface that abuts against a back surface opposite to the top surface of the substrate. A plasma processing apparatus.
  3. 　プラズマ処理装置であって、
    　プロセスガスが導入され、前記プロセスガスからなるプラズマが生成されるチャンバと、
    　基板が載置される第１ベース面，前記第１ベース面の周縁部に設けられた第２ベース面，及び前記第１ベース面と前記第２ベース面との間に設けられたベース段差部を有し、前記チャンバ内に配置されたベース部材と、
    　前記第２ベース面から前記第１ベース面に載置された前記基板の上面までの高さ以下である高さを有し、前記第２ベース面上に配置され、絶縁物質で形成された絶縁プレートと、
    　前記基板に向けて前記プロセスガスを供給し、前記チャンバ内に配置されたシャワープレートと、
    　前記絶縁プレートに対向するように前記シャワープレートの周縁部に配置され、絶縁物質で形成された電極マスクと、
    　を含むことを特徴とするプラズマ処理装置。     A plasma processing apparatus,
    A chamber in which a process gas is introduced and a plasma composed of the process gas is generated;
    A first base surface on which a substrate is placed, a second base surface provided at a peripheral portion of the first base surface, and a base step portion provided between the first base surface and the second base surface A base member disposed in the chamber;
    An insulation having a height equal to or less than a height from the second base surface to an upper surface of the substrate placed on the first base surface, and disposed on the second base surface and formed of an insulating material Plates,
    Supplying the process gas toward the substrate, and a shower plate disposed in the chamber;
    An electrode mask disposed on the peripheral edge of the shower plate so as to face the insulating plate, and formed of an insulating material;
    A plasma processing apparatus comprising:
  4. 　請求項３に記載のプラズマ処理装置であって、
    　前記絶縁プレートは、前記基板の側面に当接される第１当接面と、前記基板の前記上面とは反対の裏面に当接される第２当接面を有する突出部とを含むことを特徴とするプラズマ処理装置。     The plasma processing apparatus according to claim 3,
    The insulating plate includes a first abutting surface that abuts against a side surface of the substrate and a protrusion having a second abutting surface that abuts against a back surface opposite to the top surface of the substrate. A plasma processing apparatus.
  5. 　プラズマ処理装置であって、
    　プロセスガスが導入され、前記プロセスガスからなるプラズマが生成されるチャンバと、
    　前記チャンバ内に配置され、基板が載置されるベース部材と、
    　前記ベース部材の周縁部に配置され、絶縁物質で形成された絶縁プレートと、
    　噴出孔が形成されている第１シャワー面，前記第１シャワー面の周縁部に設けられた第２シャワー面，及び前記第１シャワー面と前記第２シャワー面との間に設けられたシャワー段差部を有し、前記基板に向けて前記プロセスガスを供給し、前記チャンバ内に配置されたシャワープレートと、
    　前記第２シャワー面から前記第１シャワー面までの高さ以下である高さを有し、前記絶縁プレートに対向するように前記第２シャワー面上に配置され、絶縁物質で形成された電極マスクと、
    　を含むことを特徴とするプラズマ処理装置。     A plasma processing apparatus,
    A chamber in which a process gas is introduced and a plasma composed of the process gas is generated;
    A base member disposed in the chamber and on which a substrate is placed;
    An insulating plate disposed on the periphery of the base member and formed of an insulating material;
    A first shower surface in which an ejection hole is formed, a second shower surface provided at a peripheral portion of the first shower surface, and a shower step provided between the first shower surface and the second shower surface A shower plate disposed in the chamber, and supplying the process gas toward the substrate;
    An electrode mask having a height equal to or less than a height from the second shower surface to the first shower surface, disposed on the second shower surface so as to face the insulating plate, and formed of an insulating material. When,
    A plasma processing apparatus comprising:
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