WO2010079756A1 - Plasma processing apparatus - Google Patents

Plasma processing apparatus Download PDF

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Publication number
WO2010079756A1
WO2010079756A1 PCT/JP2010/000067 JP2010000067W WO2010079756A1 WO 2010079756 A1 WO2010079756 A1 WO 2010079756A1 JP 2010000067 W JP2010000067 W JP 2010000067W WO 2010079756 A1 WO2010079756 A1 WO 2010079756A1
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WO
WIPO (PCT)
Prior art keywords
chamber
door valve
processing apparatus
plasma processing
substrate
Prior art date
Application number
PCT/JP2010/000067
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French (fr)
Japanese (ja)
Inventor
若松貞次
亀崎厚治
菊池正志
神保洋介
江藤謙次
浅利伸
内田寛人
Original Assignee
株式会社アルバック
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to DE112010000781T priority Critical patent/DE112010000781T5/en
Priority to CN2010800041209A priority patent/CN102272895A/en
Priority to JP2010545749A priority patent/JPWO2010079756A1/en
Priority to KR1020117015408A priority patent/KR101289770B1/en
Publication of WO2010079756A1 publication Critical patent/WO2010079756A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Definitions

  • the present invention relates to a plasma processing apparatus.
  • This application claims priority based on Japanese Patent Application No. 2009-004025 filed on Jan. 9, 2009, the contents of which are incorporated herein by reference.
  • a plasma processing apparatus that decomposes a source gas using plasma and forms a thin film on a film formation surface of a substrate, for example.
  • 302 forms a processing chamber 301.
  • a shower plate 306 connected to an electrode flange and having a plurality of jet nozzles, and a heater 308 on which a substrate 307 is disposed.
  • a space 309 formed between the shower plate 306 and the electrode flange 304 is a gas introduction space into which the source gas is introduced. That is, the shower plate 30 divides the inside of the processing chamber 301 into a film formation space 305 in which a film is formed on the substrate 307 and a gas introduction space (space 309).
  • a ground plate 310 is connected to the heater 308.
  • the other end of the ground plate 310 is electrically connected to the vicinity of the inner bottom surface of the chamber 303.
  • the chamber 303 is connected to the ground potential.
  • the heater 308 functions as an anode electrode.
  • a high frequency power supply 311 is connected to the electrode flange 304.
  • the electrode flange 304 and the shower plate 306 function as a cathode electrode.
  • a shield cover 312 formed so as to cover the electrode flange 304 and connected to the chamber 303 is provided around the electrode flange 304.
  • the gas introduced into the gas introduction space is uniformly ejected from each ejection port of the shower plate 306 into the film formation space.
  • a high frequency power source is activated to apply a high frequency voltage to the electrode flange 304, and plasma is generated in the film formation space.
  • a desired film is formed by the source gas decomposed by the plasma reaching the film formation surface of the substrate.
  • the side wall of the chamber 303 is provided with a loading / unloading portion 313 used for unloading or loading the substrate 307 into / from the chamber 303, and a door valve 314 for opening and closing the substrate 307 is provided.
  • the path of the high-frequency current flowing through the inner surface of the chamber 303 where the carry-in / out part 313 is formed is longer than the path of the high-frequency current flowing through the inner surface of the chamber 303 where the carry-in / out part 313 is not formed.
  • the inductance increases in the path of the high-frequency current flowing through the inner surface where the carry-in / out section 313 is formed.
  • the present invention has been made in view of the above-described circumstances, and provides a plasma processing apparatus that can prevent an abnormal discharge at a carry-in / out section and increase an applicable high-frequency voltage.
  • a plasma processing apparatus of the present invention includes a chamber having a side wall, an electrode flange, an insulating flange sandwiched between the chamber and the electrode flange, and a processing chamber having a reaction chamber.
  • a substrate housed in the reaction chamber and having a processing surface is placed thereon, is provided on a side wall of the chamber, and a support unit that controls the temperature of the substrate, and unloads or carries the substrate into the reaction chamber.
  • a loading / unloading unit used for connecting the electrode flange, an RF power source for applying a high-frequency voltage, a first door valve provided in the loading / unloading unit for opening and closing the loading / unloading unit, and the chamber being electrically connected.
  • a second door valve having a surface portion located on the same plane as the inner surface of the chamber.
  • a current can be passed over the surface portion of the second door valve as a return current path in the carry-in / out portion.
  • the inductance in the vicinity of the carry-in / out section can be reduced.
  • the discharge space surrounded by the first door valve and the carry-in / out section can be closed. Therefore, when generating plasma, abnormal discharge in the carry-in / out section can be prevented, and the high-frequency voltage that can be applied to the electrode flange can be increased.
  • a said 2nd door valve has an edge part in which the elastic member which has electroconductivity is provided.
  • the second door valve and the chamber are electrically connected, and a current can be passed between the second door valve and the chamber as a return current path.
  • it can prevent that an edge part and a carrying in / out part collide. For this reason, damage to the second door valve or the chamber can be prevented, and the component life can be extended.
  • a gap is provided between the second door valve and the chamber, and the second door valve and the chamber are electrically connected.
  • a minimal gap of 1 mm or less is provided between the second door valve and the chamber.
  • the plasma processing apparatus of the present invention preferably includes a shower plate that is accommodated in the reaction chamber, is disposed to face the processing surface, and supplies a process gas toward the substrate.
  • the shower plate supplies the process gas
  • the RF power supply supplies the high-frequency voltage, so that the plasma-state process gas is obtained, the vapor phase growth reaction occurs on the processing surface of the substrate, and the thin film is processed.
  • a film can be formed on the surface.
  • a current can be passed over the surface portion of the second door valve as a return current path in the carry-in / out portion. For this reason, the inductance in the vicinity of the carry-in / out section can be reduced. Further, by providing the second door valve, the discharge space surrounded by the first door valve and the carry-in / out section can be closed. Therefore, when generating plasma, abnormal discharge in the carry-in / out section can be prevented, and the high-frequency voltage that can be applied to the electrode flange can be increased.
  • FIG. 1 is a schematic cross-sectional view showing a configuration of a plasma processing apparatus 1 in the present embodiment.
  • a plasma processing apparatus 1 that performs a plasma CVD method includes a processing chamber 101 having a film formation space 2a that is a reaction chamber.
  • the processing chamber 101 includes a vacuum chamber 2 (chamber), an electrode flange 4, and an insulating flange 81 sandwiched between the vacuum chamber 2 and the electrode flange 4.
  • An opening is formed in the bottom 11 (inner bottom surface) of the vacuum chamber 2.
  • a support column 25 is inserted into the opening, and the support column 25 is disposed in the lower portion of the vacuum chamber 2.
  • a plate-like heater 15 (support portion) is connected to the tip of the support column 25 (in the vacuum chamber 2).
  • an exhaust pipe 27 is connected to the vacuum chamber 2.
  • a vacuum pump 28 is provided at the tip of the exhaust pipe 27. The vacuum pump 28 reduces the pressure so that the inside of the vacuum chamber 2 is in a vacuum state.
  • the support column 25 is connected to an elevating mechanism (not shown) provided outside the vacuum chamber 2 and can move up and down in the vertical direction of the substrate 10. That is, the heater 15 connected to the tip of the support column 25 is configured to be able to move up and down in the vertical direction.
  • a bellows (not shown) is provided outside the vacuum chamber 2 so as to cover the outer periphery of the support column 25.
  • the electrode flange 4 has an upper wall 41 and a peripheral wall 43.
  • the electrode flange 4 is disposed such that the opening of the electrode flange 4 is positioned below in the vertical direction of the substrate 10.
  • a shower plate 5 is attached to the opening of the electrode flange 4.
  • a space 24 is formed between the electrode flange 4 and the shower plate 5.
  • the upper wall 41 of the electrode flange 4 faces the shower plate 5.
  • a gas inlet 42 is provided in the upper wall 41.
  • a gas introduction pipe 7 is provided between the process gas supply unit 21 and the gas introduction port 42 provided outside the processing chamber 101. One end of the gas introduction pipe 7 is connected to the gas introduction port 42, and the other end is connected to the process gas supply unit 21. Further, the gas introduction pipe 7 penetrates a shield cover 13 described later. Further, the process gas is supplied from the process gas supply unit 21 to the space 24 through the gas introduction pipe 7. That is, the space 24 functions as a gas introduction space into which process gas is introduced.
  • the electrode flange 4 and the shower plate 5 are each made of a conductive material.
  • a shield cover 13 is provided around the electrode flange 4 so as to cover the electrode flange 4.
  • the shield cover 13 is not in contact with the electrode flange 4 and is disposed so as to be continuous with the opening peripheral edge portion 14 of the vacuum chamber 2.
  • An RF power source 9 (high frequency power source) provided outside the vacuum chamber 2 is connected to the electrode flange 4 via a matching box 12.
  • the matching box 12 is attached to the shield cover 13.
  • the vacuum chamber 2 is grounded via the shield cover 13.
  • the electrode flange 4 and the shower plate 5 are configured as a cathode electrode 71.
  • a plurality of gas jets 6 are formed in the shower plate 5. The process gas introduced into the space 24 is ejected from the gas ejection port 6 into the film formation space 2 a in the vacuum chamber 2.
  • a gas introduction pipe 8 different from the gas introduction pipe 7 is connected to the film forming space 2 a of the vacuum chamber 2.
  • the gas introduction pipe 8 is provided with a fluorine gas supply unit 22 and a radical source 23.
  • the radical source 23 decomposes the fluorine gas supplied from the fluorine gas supply unit 22.
  • the gas introduction pipe 8 supplies fluorine radicals obtained by decomposing fluorine gas to the film formation space 2 a in the vacuum chamber 2.
  • the heater 15 is a plate-like member having a flat surface.
  • the substrate 10 is placed on the upper surface of the heater 15.
  • the heater 15 functions as a ground electrode, that is, an anode electrode 72.
  • the heater 15 is made of, for example, an aluminum alloy having conductivity.
  • the distance (gap) G1 between the processing surface 10a of the substrate 10 and the shower plate 5 is set to a narrow gap of 3 mm or more and 10 mm or less.
  • the gas hole 6 formed in the shower plate 5 is formed on the processing surface 10a of the substrate 10 when the minimum (limit) hole diameter is set to 0.3 mm.
  • the quality of the film may be affected by the hole diameter of the gas outlet 6 of the shower plate 5. Further, when the distance G1 is larger than 10 mm, powder may be generated during film formation.
  • a heater wire 16 is provided inside the heater 15.
  • the temperature of the heater 15 is adjusted to a predetermined temperature by the heater wire 16.
  • the heater wire 16 protrudes from a back surface 17 at a substantially central portion of the heater 15 as viewed from the vertical direction of the heater 15.
  • the heater wire 16 is inserted into a through hole 18 and a support column 25 formed in the substantially central portion of the heater 15 and led to the outside of the vacuum chamber 2.
  • the heater wire 16 is connected to a power source (not shown) outside the vacuum chamber 2 and adjusts the temperature of the heater 15 according to the power supplied from the power source.
  • a plurality of first ends (one ends) of a flexible earth plate 30 are connected to the outer peripheral edge of the heater 15 via attachment members 30a.
  • the ground plates 30 are arranged at substantially equal intervals along the outer peripheral edge of the heater 15.
  • the ground plate 30 electrically connects the heater 15 and the vacuum chamber 2.
  • the second end (the other end) of the earth plate 30 is electrically connected to the bottom 11 of the vacuum chamber 2.
  • the heater 15 functions as the anode electrode 72.
  • the earth plate 30 is made of, for example, a nickel alloy or an aluminum alloy.
  • the side wall 34 of the vacuum chamber 2 is formed with a loading / unloading portion 36 (loading / unloading port) used for unloading or loading the substrate 10.
  • a first door valve 55 that opens and closes the loading / unloading portion 36 is provided on the outer surface 35 constituting the side wall 34 of the vacuum chamber 2.
  • the first door valve 55 is slidable in the vertical direction.
  • the carry-in / out section 36 is opened, and the substrate 10 can be carried out or carried in (see FIG. 3).
  • the carry-in / out section 36 is closed, and the processing (film formation processing) of the substrate 10 can be performed (see FIG. 2). .
  • a second door valve 56 for opening and closing the carry-in / out portion 36 is provided on the inner side surface 33 constituting the side wall 34 of the vacuum chamber 2.
  • the second door valve 56 is slidable in the vertical direction.
  • the second door valve 56 has a surface portion 56a and an end portion 56b.
  • the surface portion 56a and the inner side surface 33 of the vacuum chamber 2 are on the same plane.
  • the second door valve 56 opens and closes the loading / unloading portion 36 in synchronization with the operation of the first door valve 55. That is, when the first door valve 55 slides downward, the second door valve 56 also slides downward (see FIG. 3). On the other hand, when the first door valve 55 slides upward, the second door valve 56 also slides upward (see FIG. 2).
  • the end 56b of the second door valve 56 is provided with a coil spring 57 (elastic member) having conductivity as a whole. That is, when the second door valve 56 is closed, the end 56 b does not contact the inner peripheral surface of the carry-in / out portion 36, and the coil spring 57 and the inner peripheral surface of the carry-in / out portion 36 come into contact. In the closed state of the second door valve 56, the end portion 56 b of the second door valve 56 and the vacuum chamber 2 are electrically connected via the coil spring 57.
  • a coil spring 57 elastic member
  • the vacuum chamber 2 is depressurized using the vacuum pump 28.
  • the first door valve 55 and the second door valve 56 are opened in a state where the inside of the vacuum chamber 2 is maintained in a vacuum (see FIG. 3), and the film formation space is formed from the outside of the vacuum chamber 2 through the loading / unloading portion 36 of the vacuum chamber 2.
  • substrate 10 is carried in toward 2a.
  • the substrate 10 is placed on the heater 15. After the board
  • the heater 15 Before the substrate 10 is placed, the heater 15 is positioned below the vacuum chamber 2. That is, since the space
  • the interval between the shower plate 5 and the substrate 10 is determined as desired so that the interval necessary for proper film formation is achieved, and this interval is maintained.
  • the distance G1 between the processing surface 10a of the substrate 10 and the shower plate 5 is 3 mm or more and 10 mm or less, that is, a narrow gap is set.
  • the process gas is introduced into the space 24 from the process gas supply unit 21 through the gas introduction pipe 7 and the gas introduction port 42. Then, a process gas is ejected from the gas ejection port 6 of the shower plate 5 into the film formation space 2a.
  • the RF power source 9 is activated to apply high frequency power to the electrode flange 4. Then, a high-frequency current flows from the surface of the electrode flange 4 to the surface of the shower plate 5, and discharge occurs between the shower plate 5 and the heater 15. Then, plasma is generated between the shower plate 5 and the processing surface 10 a of the substrate 10. The process gas is decomposed in the plasma thus generated to obtain a plasma process gas, a vapor phase growth reaction occurs on the processing surface 10a of the substrate 10, and a thin film is formed on the processing surface 10a.
  • the high-frequency current transmitted to the heater 15 flows to the inner surface of the bottom 11 of the vacuum chamber 2 through the earth plate 30.
  • the high-frequency current is returned through the shield cover 13 (return current).
  • the return current is transmitted from the bottom 11 of the vacuum chamber 2 to the inner surface 33 of the side wall 34 to the shield cover 13 (see FIG. 1). See right).
  • the return current is transmitted from the bottom part 11 of the vacuum chamber 2 to the coil spring 57 formed on the surface part 56 a and the end part 56 b of the second door valve 56. Is transmitted to the shield cover 13 (see the left side of FIG. 1 and FIG. 2). Therefore, high-frequency current is prevented from flowing through the inner surface of the carry-in / out section 36.
  • the surface portion 56a of the second door valve 56 and the inner surface 33 of the vacuum chamber 2 are on the same plane.
  • the distance of the return path when the high-frequency current flows through the surface portion 56 a of the second door valve 56 is the same as the distance of the return path when the high-frequency current flows through the inner surface 33 of the vacuum chamber 2.
  • the inductance is set to be the same regardless of the presence / absence of the carry-in / out portion 36.
  • the film forming material adheres to the inner surface 33 of the vacuum chamber 2 and the like, so that the inside of the vacuum chamber 2 is periodically cleaned.
  • the fluorine gas supplied from the fluorine gas supply unit 22 is decomposed by the radical source 23 to generate fluorine radicals.
  • the fluorine radicals pass through the gas introduction pipe 8 connected to the vacuum chamber 2 and pass through the vacuum chamber 2. To be supplied.
  • a chemical reaction occurs, and deposits attached to the members disposed around the film formation space 2a or the inner wall surface of the vacuum chamber 2 Is removed.
  • FIG. 4 is a table showing the sizes and operating conditions of the parts constituting the plasma processing apparatus 1.
  • FIG. 5 is a table comparing the conventional plasma processing apparatus and the plasma processing apparatus of the present invention. The magnitude of the high-frequency voltage Pf (Kw) that can be applied (applied) to the electrode flange 4 based on the conditions shown in FIG. Is shown.
  • the area of the electrode size that is, the length L1 in the longitudinal direction of the region of the shower plate 5 facing the substrate 10 is set to 1,600 mm, and the length in the short direction is It is set to 1,300 mm.
  • the susceptor size that is, the length L2 in the longitudinal direction of the region where the substrate 10 is placed on the heater 15 which is the anode electrode 72 is set to 1,700 mm, and the length in the short direction is 1,400 mm.
  • the RF frequency of the RF power source 9 is set to 27.12 MHz.
  • 1 (slm) SiH 4 (monosilane) and 25 (slm) H 2 (hydrogen) are used.
  • the distance G1 between the processing surface 10a of the substrate 10 and the shower plate 5 was changed to a range of 4 mm to 10 mm, and the pressure in the film formation space 2a was changed to a range of 700 Pa to 2000 Pa. .
  • the magnitude of the high-frequency voltage Pf (Kw) that can be applied to the electrode flange 4 was measured, and the conventional and the present invention were compared. Further, a ⁇ c-Si film was formed on the processing surface 10a of the substrate 10 under such conditions.
  • the plasma processing apparatus 1 of the present invention has the result that the high-frequency power that can be applied to the electrode flange 4 is larger than that in the conventional case in all the conditions (ES) of the distance G1 and all the pressure conditions. Obtained.
  • a high-frequency current can flow on the surface portion 56 a of the second door valve 56 as a return current path in the carry-in / out portion 36 of the vacuum chamber 2. For this reason, compared with the case where a return electric current flows into the 1st door valve 55, the inductance in the carrying in / out part 36 vicinity can be reduced. That is, on the return current path, the inductance is set to be the same on the entire circumference of the inner surface 33 of the vacuum chamber 2 regardless of the presence / absence of the loading / unloading portion 36. Further, by providing the second door valve 56, the discharge space (the space K in FIG. 1) surrounded by the first door valve 55 and the carry-in / out section can be closed. Therefore, when plasma is generated, abnormal discharge in the carry-in / out section 36 can be prevented, and the high-frequency voltage that can be applied to the electrode flange 4 can be increased.
  • the technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention. That is, the specific materials or configurations described in the present embodiment are examples of the present invention, and can be appropriately changed.
  • the first door valve 55 and the second door valve 56 are provided so as to slide in the vertical direction. When the door valves 55 and 56 slide upward, the loading / unloading portion 36 is closed, and the door valves 55 and 56 are moved downward. The structure in which the loading / unloading portion 36 is opened when the sliding movement is performed is described.
  • each door valve 55, 56 opens and closes the discharge inlet so that the substrate 10 can be carried out and carried in.
  • a structure may be employed in which the loading / unloading portion 36 is opened when the door valves 55 and 56 slide upward, and the loading / unloading portion 36 is closed when the door valves 55 and 56 slide downward.
  • a structure may be employed in which the loading / unloading portion 36 is opened and closed by the door valve rotating at a predetermined angle around the rotation axis.
  • the present invention is not limited to this structure, and the coil spring 57 may not be provided on the entire end portion 56b.
  • the coil spring 57 is not provided at the end portion 56b of the second door valve 56, and a structure in which a minimal gap G2 of 1 mm or less is provided between the end portion 56b and the loading / unloading portion 36 is adopted. May be.
  • the size of the gap G2 is set such that energization is possible between the end portion 56b and the carry-in / out portion 36. That is, when a high-frequency voltage is applied, the end portion 56b is electrically connected to the carry-in / out portion 36 via capacitive coupling as a return current path.
  • the plasma processing apparatus 1 uses a mixed gas of SiH 4 and H 2 as the process gas and the ⁇ c-Si film is formed on the processing surface 10a of the substrate 10 has been described.
  • the present invention is not limited to such film types, and a-Si (amorphous silicon), SiO 2 (oxide film), SiN (ticker film), and SiC (carbonized film) are formed using the plasma processing apparatus 1.
  • the above-described plasma processing apparatus 1 may be applied to a plasma processing apparatus that performs an etching process. In this case, the type or flow rate of the process gas is appropriately changed according to each processing condition.
  • the present invention is useful for a plasma processing apparatus that can prevent an abnormal discharge at the carry-in / out section and increase the applicable high-frequency voltage.

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Abstract

Disclosed is a plasma processing apparatus which comprises: a processing chamber (101) which has a reaction chamber (2a) and is configured of a chamber (2) having a side wall (34), an electrode flange (4) and an insulating flange (81) interposed between the chamber (2) and the electrode flange (4); a support part (15) which is arranged within the reaction chamber (2a) and on which a substrate (10) having a surface to be processed (10a) is placed; a carry in/out port (36) which is provided on the side wall (34) of the chamber (2); an RF power supply (9) which is connected to the electrode flange (4) and applies a high-frequency voltage thereto; a first door valve (55) which is provided on the carry in/out port (36) and opens/closes the carry in/out port (36); and a second door valve (56) which is electrically connected to the chamber (2) and has a surface portion (56a) which is on the same plane as an inner side surface (33) of the chamber (2).

Description

プラズマ処理装置Plasma processing equipment
　本発明は、プラズマ処理装置に関する。
　本願は、２００９年１月９日に出願された特願２００９－００４０２５号に基づき優先権を主張し、その内容をここに援用する。 The present invention relates to a plasma processing apparatus.
This application claims priority based on Japanese Patent Application No. 2009-004025 filed on Jan. 9, 2009, the contents of which are incorporated herein by reference.
　従来から、プラズマを用いて原料ガスを分解し、例えば、基板の被成膜面に薄膜を形成するプラズマ処理装置が知られている。このプラズマ処理装置においては、例えば、図７に示すように、成膜空間（反応室）３０５を有するように、チャンバ３０３と、電極フランジ３０４と、チャンバ３０３及び電極フランジ３０４によって挟まれた絶縁フランジ３０２とによって処理室３０１が構成されている。処理室３０１内には、電極フランジに接続され複数の噴出口を有するシャワープレート３０６と、基板３０７が配置されるヒータ３０８とが設けられている。シャワープレート３０６と電極フランジ３０４との間に形成される空間３０９は、原料ガスが導入されるガス導入空間である。即ち、シャワープレート３０は、処理室３０１内を、基板３０７に膜が形成される成膜空間３０５と、ガス導入空間（空間３０９）とに区画している。 Conventionally, there has been known a plasma processing apparatus that decomposes a source gas using plasma and forms a thin film on a film formation surface of a substrate, for example. In this plasma processing apparatus, for example, as shown in FIG. 7, a chamber 303, an electrode flange 304, and an insulating flange sandwiched between the chamber 303 and the electrode flange 304 so as to have a film formation space (reaction chamber) 305. 302 forms a processing chamber 301. In the processing chamber 301, there are provided a shower plate 306 connected to an electrode flange and having a plurality of jet nozzles, and a heater 308 on which a substrate 307 is disposed. A space 309 formed between the shower plate 306 and the electrode flange 304 is a gas introduction space into which the source gas is introduced. That is, the shower plate 30 divides the inside of the processing chamber 301 into a film formation space 305 in which a film is formed on the substrate 307 and a gas introduction space (space 309).
　ヒータ３０８には、アースプレート３１０の一端が接続されている。アースプレート３１０の他端は、チャンバ３０３の内底面近傍に電気的に接続されている。チャンバ３０３は、接地電位に接続されている。これによってヒータ３０８は、アノード電極として機能する。一方、電極フランジ３０４には高周波電源３１１が接続されている。電極フランジ３０４及びシャワープレート３０６は、カソード電極として機能する。電極フランジ３０４の周囲には、例えば、電極フランジ３０４を覆うように形成され、かつチャンバ３０３に接続されたシールドカバー３１２などが設けられている。 One end of a ground plate 310 is connected to the heater 308. The other end of the ground plate 310 is electrically connected to the vicinity of the inner bottom surface of the chamber 303. The chamber 303 is connected to the ground potential. Thereby, the heater 308 functions as an anode electrode. On the other hand, a high frequency power supply 311 is connected to the electrode flange 304. The electrode flange 304 and the shower plate 306 function as a cathode electrode. For example, a shield cover 312 formed so as to cover the electrode flange 304 and connected to the chamber 303 is provided around the electrode flange 304.
　このような構成において、ガス導入空間に導入されたガスは、シャワープレート３０６の各噴出口から成膜空間に均一に噴出される。このとき、高周波電源を起動して電極フランジ３０４に高周波電圧を印加し、成膜空間内にプラズマを発生させる。そして、プラズマによって分解された原料ガスが基板の被成膜面に到達することにより所望の膜が形成される。
　電極フランジ３０４に高周波電圧を印加してプラズマを発生させる際、プラズマの発生に伴って流れる電流は、図７の矢印に示すように、シャワープレート３０６，ヒータ３０８，及びアースプレート３１０の順に伝達される。また、この電流は、チャンバ３０３の内側面及びシールドカバー３１２に伝達され、電極フランジ３０４にリターンされる。プラズマの発生に伴う電流は、このような電流経路を通じて流れる（例えば、特許文献１参照）。 In such a configuration, the gas introduced into the gas introduction space is uniformly ejected from each ejection port of the shower plate 306 into the film formation space. At this time, a high frequency power source is activated to apply a high frequency voltage to the electrode flange 304, and plasma is generated in the film formation space. A desired film is formed by the source gas decomposed by the plasma reaching the film formation surface of the substrate.
When plasma is generated by applying a high-frequency voltage to the electrode flange 304, the current flowing along with the generation of the plasma is transmitted in the order of the shower plate 306, the heater 308, and the earth plate 310 as shown by the arrows in FIG. The This current is transmitted to the inner surface of the chamber 303 and the shield cover 312 and returned to the electrode flange 304. The current accompanying the generation of plasma flows through such a current path (see, for example, Patent Document 1).
特開２００８－２４４０７９号公報JP 2008-244079 A
　ところで、図８に示すように、チャンバ３０３の側壁には、基板３０７をチャンバ３０３内に搬出又は搬入するために用いられる搬出入部３１３が設けられ、これを開閉するドアバルブ３１４が設けられている場合が多い。
　このような場合、搬出入部３１３が形成されているチャンバ３０３の内側面を流れる高周波電流の経路は、搬出入部３１３が形成されていないチャンバ３０３の内側面を流れる高周波電流の経路よりも長くなる。これによって、搬出入部３１３が形成されている内側面を流れる高周波電流の経路において、インダクタンスが大きくなる。
　特に、基板３０７のサイズが大型化すると、高周波電圧を大きくする必要があるため、搬出入部３１３の近傍における異常放電が発生するおそれがある。
　このため、異常放電に起因するインピーダンスの不整合が生じ、電極フランジ３０４に印加できる高周波電圧が低下してしまうという課題がある。 By the way, as shown in FIG. 8, the side wall of the chamber 303 is provided with a loading / unloading portion 313 used for unloading or loading the substrate 307 into / from the chamber 303, and a door valve 314 for opening and closing the substrate 307 is provided. There are many.
In such a case, the path of the high-frequency current flowing through the inner surface of the chamber 303 where the carry-in / out part 313 is formed is longer than the path of the high-frequency current flowing through the inner surface of the chamber 303 where the carry-in / out part 313 is not formed. As a result, the inductance increases in the path of the high-frequency current flowing through the inner surface where the carry-in / out section 313 is formed.
In particular, when the size of the substrate 307 is increased, it is necessary to increase the high-frequency voltage, and thus abnormal discharge may occur near the carry-in / out unit 313.
For this reason, the impedance mismatch resulting from abnormal discharge arises, and there exists a subject that the high frequency voltage which can be applied to the electrode flange 304 will fall.
　そこで、この発明は、上述した事情に鑑みてなされたものであって、搬出入部における異常放電を防止し、印加可能な高周波電圧を大きくすることができるプラズマ処理装置を提供する。 Therefore, the present invention has been made in view of the above-described circumstances, and provides a plasma processing apparatus that can prevent an abnormal discharge at a carry-in / out section and increase an applicable high-frequency voltage.
　上記の課題を解決するために、本発明のプラズマ処理装置は、側壁を有するチャンバと、電極フランジと、前記チャンバ及び前記電極フランジによって挟まれた絶縁フランジとから構成され、反応室を有する処理室と、前記反応室内に収容され、処理面を有する基板が載置され、前記基板の温度を制御する支持部と、前記チャンバの前記側壁に設けられ、前記反応室に前記基板を搬出又は搬入するために用いられる搬出入部と、前記電極フランジに接続され、高周波電圧を印加するＲＦ電源と、前記搬出入部に設けられ、前記搬出入部を開閉する第一ドアバルブと、前記チャンバと電気的に接続され、前記チャンバの内側面と同一平面上に位置する面部を有する第二ドアバルブとを含む。
　このような構成においては、搬出入部におけるリターン電流の経路として、第二ドアバルブの面部上に電流を流すことができる。このため、搬出入部近傍におけるインダクタンスを低下させることができる。また、第二ドアバルブを設けることによって、第一ドアバルブと搬出入部とによって囲まれた放電空間を閉塞することができる。従って、プラズマを発生させる際、搬出入部内における異常放電を防止でき、電極フランジに印加できる高周波電圧を大きくすることができる。 In order to solve the above problems, a plasma processing apparatus of the present invention includes a chamber having a side wall, an electrode flange, an insulating flange sandwiched between the chamber and the electrode flange, and a processing chamber having a reaction chamber. A substrate housed in the reaction chamber and having a processing surface is placed thereon, is provided on a side wall of the chamber, and a support unit that controls the temperature of the substrate, and unloads or carries the substrate into the reaction chamber. A loading / unloading unit used for connecting the electrode flange, an RF power source for applying a high-frequency voltage, a first door valve provided in the loading / unloading unit for opening and closing the loading / unloading unit, and the chamber being electrically connected. And a second door valve having a surface portion located on the same plane as the inner surface of the chamber.
In such a configuration, a current can be passed over the surface portion of the second door valve as a return current path in the carry-in / out portion. For this reason, the inductance in the vicinity of the carry-in / out section can be reduced. Further, by providing the second door valve, the discharge space surrounded by the first door valve and the carry-in / out section can be closed. Therefore, when generating plasma, abnormal discharge in the carry-in / out section can be prevented, and the high-frequency voltage that can be applied to the electrode flange can be increased.
　本発明のプラズマ処理装置においては、前記第二ドアバルブは、導電性を有する弾性部材が設けられる端部を有することが好ましい。
　このような構成においては、第二ドアバルブとチャンバとが電気的に接続され、リターン電流の経路として第二ドアバルブとチャンバとの間に電流すことができる。また、第二ドアバルブを閉じる際に、端部と搬出入部とが衝突することを防止することができる。このため、第二ドアバルブ又はチャンバの損傷を防止でき、部品寿命を長くすることができる。 In the plasma processing apparatus of this invention, it is preferable that a said 2nd door valve has an edge part in which the elastic member which has electroconductivity is provided.
In such a configuration, the second door valve and the chamber are electrically connected, and a current can be passed between the second door valve and the chamber as a return current path. Moreover, when closing a 2nd door valve, it can prevent that an edge part and a carrying in / out part collide. For this reason, damage to the second door valve or the chamber can be prevented, and the component life can be extended.
　本発明のプラズマ処理装置においては、前記第二ドアバルブと前記チャンバとの間に間隙が設けられ、前記第二ドアバルブと前記チャンバとが電気的に接続されることが好ましい。
　この構成においては、例えば、第二ドアバルブとチャンバとの間に１ｍｍ以下の極小の間隙が設けられる。また、高周波電圧が印加されている際に、リターン電流の経路として、端部は容量結合を介して搬出入部に電気的に接続される。
　このような構成においては、第二ドアバルブの端部と搬出入部とが接触しないため、塵埃などが端部と搬出入部との間に堆積することを防止できる。 In the plasma processing apparatus of the present invention, it is preferable that a gap is provided between the second door valve and the chamber, and the second door valve and the chamber are electrically connected.
In this configuration, for example, a minimal gap of 1 mm or less is provided between the second door valve and the chamber. Further, when a high-frequency voltage is applied, the end portion is electrically connected to the carry-in / out portion via capacitive coupling as a return current path.
In such a configuration, since the end portion of the second door valve and the carry-in / out portion are not in contact with each other, it is possible to prevent dust and the like from accumulating between the end portion and the carry-in / out portion.
　本発明のプラズマ処理装置においては、前記反応室内に収容され、前記処理面に対向するように配置され、前記基板に向けてプロセスガスを供給するシャワープレートを含むことが好ましい。
　この構成においては、シャワープレートがプロセスガスを供給し、ＲＦ電源が高周波電圧を供給することにより、プラズマ状態のプロセスガスが得られ、基板の処理面上で気相成長反応が生じ、薄膜を処理面上に成膜することができる。 The plasma processing apparatus of the present invention preferably includes a shower plate that is accommodated in the reaction chamber, is disposed to face the processing surface, and supplies a process gas toward the substrate.
In this configuration, the shower plate supplies the process gas, and the RF power supply supplies the high-frequency voltage, so that the plasma-state process gas is obtained, the vapor phase growth reaction occurs on the processing surface of the substrate, and the thin film is processed. A film can be formed on the surface.
　本発明によれば、搬出入部におけるリターン電流の経路として、第二ドアバルブの面部上に電流を流すことができる。このため、搬出入部近傍におけるインダクタンスを低下させることができる。また、第二ドアバルブを設けることによって、第一ドアバルブと搬出入部とによって囲まれた放電空間を閉塞することができる。従って、プラズマを発生させる際、搬出入部内における異常放電を防止でき、電極フランジに印加できる高周波電圧を大きくすることができる。 According to the present invention, a current can be passed over the surface portion of the second door valve as a return current path in the carry-in / out portion. For this reason, the inductance in the vicinity of the carry-in / out section can be reduced. Further, by providing the second door valve, the discharge space surrounded by the first door valve and the carry-in / out section can be closed. Therefore, when generating plasma, abnormal discharge in the carry-in / out section can be prevented, and the high-frequency voltage that can be applied to the electrode flange can be increased.
本発明の実施形態におけるプラズマ処理装置の構成を示す概略断面図である。It is a schematic sectional drawing which shows the structure of the plasma processing apparatus in embodiment of this invention. 本発明の実施形態におけるプラズマ処理装置の構成を示す概略断面図であって、図１において符号Ａで示された部分を拡大して示した断面図である。It is a schematic sectional drawing which shows the structure of the plasma processing apparatus in embodiment of this invention, Comprising: It is sectional drawing which expanded and showed the part shown by the code | symbol A in FIG. 本発明の実施形態における第一ドアバルブ及び第二ドアバルブの動作を説明ための図である。It is a figure for demonstrating operation | movement of the 1st door valve and 2nd door valve in embodiment of this invention. 本発明の実施例におけるプラズマ処理装置の稼働条件を示す図である。It is a figure which shows the operating conditions of the plasma processing apparatus in the Example of this invention. 印加可能な高周波電圧の大きさに関し、本発明の実施例におけるプラズマ処理装置と従来のプラズマ処理装置との比較結果を示す図である。It is a figure which shows the comparison result of the plasma processing apparatus in the Example of this invention, and the conventional plasma processing apparatus regarding the magnitude | size of the high frequency voltage which can be applied. 本発明の実施形態の変形例における第二ドアバルブの構成を示す概略断面図である。It is a schematic sectional drawing which shows the structure of the 2nd door valve in the modification of embodiment of this invention. 従来のプラズマ処理装置の構成を示す概略断面図である。It is a schematic sectional drawing which shows the structure of the conventional plasma processing apparatus. 従来のプラズマ処理装置において、リターン電流の流れを示す図である。It is a figure which shows the flow of a return current in the conventional plasma processing apparatus.
　以下、本発明に係るプラズマ処理装置の実施形態を図面に基づき説明する。
　また、以下の説明に用いる各図においては、各構成要素を図面上で認識し得る程度の大きさとするため、各構成要素の寸法及び比率を実際のものとは適宜に異ならせてある。
　また、本実施形態においては、プラズマＣＶＤ法を用いた成膜装置を説明する。 Hereinafter, embodiments of a plasma processing apparatus according to the present invention will be described with reference to the drawings.
In the drawings used for the following description, the dimensions and ratios of the respective components are appropriately changed from the actual ones in order to make the respective components large enough to be recognized on the drawings.
In this embodiment, a film forming apparatus using a plasma CVD method will be described.
　図１は、本実施形態におけるプラズマ処理装置１の構成を示す概略断面図である。
　図１に示すように、プラズマＣＶＤ法を実施するプラズマ処理装置１は、反応室である成膜空間２ａを有する処理室１０１を含む。処理室１０１は、真空チャンバ２（チャンバ）と、電極フランジ４と、真空チャンバ２及び電極フランジ４に挟持された絶縁フランジ８１とから構成されている。 FIG. 1 is a schematic cross-sectional view showing a configuration of a plasma processing apparatus 1 in the present embodiment.
As shown in FIG. 1, a plasma processing apparatus 1 that performs a plasma CVD method includes a processing chamber 101 having a film formation space 2a that is a reaction chamber. The processing chamber 101 includes a vacuum chamber 2 (chamber), an electrode flange 4, and an insulating flange 81 sandwiched between the vacuum chamber 2 and the electrode flange 4.
　真空チャンバ２の底部１１（内底面）には、開口部が形成されている。この開口部には支柱２５が挿通され、支柱２５は真空チャンバ２の下部に配置されている。支柱２５の先端（真空チャンバ２内）には、板状のヒータ１５（支持部）が接続されている。また、真空チャンバ２には、排気管２７が接続されている。排気管２７の先端には、真空ポンプ２８が設けられている。真空ポンプ２８は、真空チャンバ２内が真空状態となるように減圧する。 An opening is formed in the bottom 11 (inner bottom surface) of the vacuum chamber 2. A support column 25 is inserted into the opening, and the support column 25 is disposed in the lower portion of the vacuum chamber 2. A plate-like heater 15 (support portion) is connected to the tip of the support column 25 (in the vacuum chamber 2). Further, an exhaust pipe 27 is connected to the vacuum chamber 2. A vacuum pump 28 is provided at the tip of the exhaust pipe 27. The vacuum pump 28 reduces the pressure so that the inside of the vacuum chamber 2 is in a vacuum state.
　また、支柱２５は、真空チャンバ２の外部に設けられた昇降機構（不図示）に接続されており、基板１０の鉛直方向において上下に移動可能である。つまり、支柱２５の先端に接続されているヒータ１５は、上下方向に昇降可能に構成されている。また、真空チャンバ２の外部においては、支柱２５の外周を覆うようにベローズ（不図示）が設けられている。 The support column 25 is connected to an elevating mechanism (not shown) provided outside the vacuum chamber 2 and can move up and down in the vertical direction of the substrate 10. That is, the heater 15 connected to the tip of the support column 25 is configured to be able to move up and down in the vertical direction. A bellows (not shown) is provided outside the vacuum chamber 2 so as to cover the outer periphery of the support column 25.
　電極フランジ４は、上壁４１と周壁４３とを有する。電極フランジ４は、電極フランジ４の開口部が基板１０の鉛直方向において下方に位置するように配置されている。また、電極フランジ４の開口部には、シャワープレート５が取り付けられている。これにより、電極フランジ４とシャワープレート５との間に空間２４が形成されている。また、電極フランジ４の上壁４１は、シャワープレート５に対向している。上壁４１には、ガス導入口４２が設けられている。
　また、処理室１０１の外部に設けられたプロセスガス供給部２１とガス導入口４２との間には、ガス導入管７が設けられている。ガス導入管７の一端は、ガス導入口４２に接続され、他端は、プロセスガス供給部２１に接続されている。また、ガス導入管７は、後述するシールドカバー１３を貫通している。また、ガス導入管７を通じて、プロセスガス供給部２１から空間２４にプロセスガスが供給される。即ち、空間２４は、プロセスガスが導入されるガス導入空間として機能している。 The electrode flange 4 has an upper wall 41 and a peripheral wall 43. The electrode flange 4 is disposed such that the opening of the electrode flange 4 is positioned below in the vertical direction of the substrate 10. A shower plate 5 is attached to the opening of the electrode flange 4. Thereby, a space 24 is formed between the electrode flange 4 and the shower plate 5. The upper wall 41 of the electrode flange 4 faces the shower plate 5. A gas inlet 42 is provided in the upper wall 41.
In addition, a gas introduction pipe 7 is provided between the process gas supply unit 21 and the gas introduction port 42 provided outside the processing chamber 101. One end of the gas introduction pipe 7 is connected to the gas introduction port 42, and the other end is connected to the process gas supply unit 21. Further, the gas introduction pipe 7 penetrates a shield cover 13 described later. Further, the process gas is supplied from the process gas supply unit 21 to the space 24 through the gas introduction pipe 7. That is, the space 24 functions as a gas introduction space into which process gas is introduced.
　電極フランジ４とシャワープレート５は、それぞれ導電材で構成されている。
　電極フランジ４の周囲には、電極フランジ４を覆うようにシールドカバー１３が設けられている。シールドカバー１３は、電極フランジ４と非接触であり、かつ、真空チャンバ２の開口周縁部１４に連設するように配置されている。また、電極フランジ４には、真空チャンバ２の外部に設けられたＲＦ電源９（高周波電源）がマッチングボックス１２を介して接続されている。マッチングボックス１２は、シールドカバー１３に取り付けられている。 The electrode flange 4 and the shower plate 5 are each made of a conductive material.
A shield cover 13 is provided around the electrode flange 4 so as to cover the electrode flange 4. The shield cover 13 is not in contact with the electrode flange 4 and is disposed so as to be continuous with the opening peripheral edge portion 14 of the vacuum chamber 2. An RF power source 9 (high frequency power source) provided outside the vacuum chamber 2 is connected to the electrode flange 4 via a matching box 12. The matching box 12 is attached to the shield cover 13.
　即ち、真空チャンバ２は、シールドカバー１３を介して接地されている。
　一方、電極フランジ４及びシャワープレート５はカソード電極７１として構成されている。シャワープレート５には、複数のガス噴出口６が形成されている。空間２４内に導入されたプロセスガスは、ガス噴出口６から真空チャンバ２内の成膜空間２ａに噴出される。 That is, the vacuum chamber 2 is grounded via the shield cover 13.
On the other hand, the electrode flange 4 and the shower plate 5 are configured as a cathode electrode 71. A plurality of gas jets 6 are formed in the shower plate 5. The process gas introduced into the space 24 is ejected from the gas ejection port 6 into the film formation space 2 a in the vacuum chamber 2.
　また、真空チャンバ２の成膜空間２ａには、ガス導入管７とは異なるガス導入管８が接続されている。
　ガス導入管８にはフッ素ガス供給部２２とラジカル源２３とが設けられている。ラジカル源２３は、フッ素ガス供給部２２から供給されたフッ素ガスを分解する。ガス導入管８は、フッ素ガスが分解されて得られたフッ素ラジカルを、真空チャンバ２内の成膜空間２ａに供給する。 Further, a gas introduction pipe 8 different from the gas introduction pipe 7 is connected to the film forming space 2 a of the vacuum chamber 2.
The gas introduction pipe 8 is provided with a fluorine gas supply unit 22 and a radical source 23. The radical source 23 decomposes the fluorine gas supplied from the fluorine gas supply unit 22. The gas introduction pipe 8 supplies fluorine radicals obtained by decomposing fluorine gas to the film formation space 2 a in the vacuum chamber 2.
　ヒータ１５は、表面が平坦に形成された板状の部材である。ヒータ１５の上面には、基板１０が載置される。ヒータ１５は、接地電極、つまりアノード電極７２として機能する。このため、ヒータ１５は、導電性を有する、例えば、アルミニウム合金で形成されている。基板１０がヒータ１５上に配置されると、基板１０とシャワープレート５とは互いに近接して平行に位置される。より具体的には、基板１０の処理面１０ａとシャワープレート５との間の距離（ギャップ）Ｇ１は、３ｍｍ以上１０ｍｍ以下のナローギャップに設定されている。 The heater 15 is a plate-like member having a flat surface. The substrate 10 is placed on the upper surface of the heater 15. The heater 15 functions as a ground electrode, that is, an anode electrode 72. For this reason, the heater 15 is made of, for example, an aluminum alloy having conductivity. When the substrate 10 is disposed on the heater 15, the substrate 10 and the shower plate 5 are positioned close to each other and in parallel. More specifically, the distance (gap) G1 between the processing surface 10a of the substrate 10 and the shower plate 5 is set to a narrow gap of 3 mm or more and 10 mm or less.
　なお、距離Ｇ１が３ｍｍよりも小さい場合、シャワープレート５に形成されているガス噴出口６の最小（限界）孔径が０．３ｍｍに設定されているとき、基板１０の処理面１０ａに形成される膜の品質がシャワープレート５のガス噴出口６の孔径の影響を受けるおそれがある。また、距離Ｇ１が１０ｍｍよりも大きい場合、成膜時にパウダーが生じるおそれがある。 When the distance G1 is smaller than 3 mm, the gas hole 6 formed in the shower plate 5 is formed on the processing surface 10a of the substrate 10 when the minimum (limit) hole diameter is set to 0.3 mm. The quality of the film may be affected by the hole diameter of the gas outlet 6 of the shower plate 5. Further, when the distance G1 is larger than 10 mm, powder may be generated during film formation.
　ヒータ１５上に基板１０が配置された状態で、ガス噴出口６からプロセスガスを噴出させると、プロセスガスは基板１０の処理面１０ａ上の空間に供給される。
　また、ヒータ１５の内部にはヒータ線１６が設けられている。ヒータ線１６によってヒータ１５の温度が所定の温度に調整される。ヒータ線１６は、ヒータ１５の鉛直方向から見たヒータ１５の略中央部の裏面１７から突出されている。ヒータ線１６は、ヒータ１５の略中央部に形成された貫通孔１８及び支柱２５の内部に挿通され、真空チャンバ２の外部へと導かれている。ヒータ線１６は、真空チャンバ２の外部において、電源（不図示）に接続され、この電源から供給される電力に応じて、ヒータ１５の温度を調節する。 When the process gas is ejected from the gas ejection port 6 in a state where the substrate 10 is disposed on the heater 15, the process gas is supplied to the space on the processing surface 10 a of the substrate 10.
A heater wire 16 is provided inside the heater 15. The temperature of the heater 15 is adjusted to a predetermined temperature by the heater wire 16. The heater wire 16 protrudes from a back surface 17 at a substantially central portion of the heater 15 as viewed from the vertical direction of the heater 15. The heater wire 16 is inserted into a through hole 18 and a support column 25 formed in the substantially central portion of the heater 15 and led to the outside of the vacuum chamber 2. The heater wire 16 is connected to a power source (not shown) outside the vacuum chamber 2 and adjusts the temperature of the heater 15 according to the power supplied from the power source.
　図１、図２に示すように、ヒータ１５の外周縁には、可撓性を有するアースプレート３０（プレート部材）の第１端（一端）が取り付け部材３０ａを介して複数接続されている。アースプレート３０は、ヒータ１５の外周縁に沿って略等間隔で配置されている。アースプレート３０は、ヒータ１５と真空チャンバ２とを電気的に接続する。アースプレート３０の第２端（他端）は、真空チャンバ２の底部１１に電気的に接続している。これによって、ヒータ１５は、アノード電極７２として機能する。アースプレート３０は、例えば、ニッケル系合金又はアルミ合金などで形成されている。 As shown in FIGS. 1 and 2, a plurality of first ends (one ends) of a flexible earth plate 30 (plate member) are connected to the outer peripheral edge of the heater 15 via attachment members 30a. The ground plates 30 are arranged at substantially equal intervals along the outer peripheral edge of the heater 15. The ground plate 30 electrically connects the heater 15 and the vacuum chamber 2. The second end (the other end) of the earth plate 30 is electrically connected to the bottom 11 of the vacuum chamber 2. Thereby, the heater 15 functions as the anode electrode 72. The earth plate 30 is made of, for example, a nickel alloy or an aluminum alloy.
　図１～図３に示すように、真空チャンバ２の側壁３４には、基板１０を搬出又は搬入するために用いられる搬出入部３６（搬出入口）が形成されている。
　真空チャンバ２の側壁３４を構成する外側面３５には、搬出入部３６を開閉する第一ドアバルブ５５が設けられている。第一ドアバルブ５５は、上下方向にスライド可能である。
　第一ドアバルブ５５が下方（真空チャンバ２の底部１１に向けた方向）にスライド移動したときは、搬出入部３６が開口され、基板１０を搬出又は搬入することができる（図３参照）。
　一方、第一ドアバルブ５５が上方（電極フランジ４に向けた方向）にスライド移動したときは、搬出入部３６が閉口され、基板１０の処理（成膜処理）を行うことができる（図２参照）。 As shown in FIGS. 1 to 3, the side wall 34 of the vacuum chamber 2 is formed with a loading / unloading portion 36 (loading / unloading port) used for unloading or loading the substrate 10.
A first door valve 55 that opens and closes the loading / unloading portion 36 is provided on the outer surface 35 constituting the side wall 34 of the vacuum chamber 2. The first door valve 55 is slidable in the vertical direction.
When the first door valve 55 slides downward (in the direction toward the bottom 11 of the vacuum chamber 2), the carry-in / out section 36 is opened, and the substrate 10 can be carried out or carried in (see FIG. 3).
On the other hand, when the first door valve 55 slides upward (in the direction toward the electrode flange 4), the carry-in / out section 36 is closed, and the processing (film formation processing) of the substrate 10 can be performed (see FIG. 2). .
　また、真空チャンバ２の側壁３４を構成する内側面３３には、搬出入部３６を開閉する第二ドアバルブ５６が設けられている。第二ドアバルブ５６は、上下方向にスライド可能である。第二ドアバルブ５６は、面部５６ａと、端部５６ｂを有する。面部５６ａ及び真空チャンバ２の内側面３３は、同一平面上にある。第二ドアバルブ５６は、第一ドアバルブ５５の動作に同期して搬出入部３６を開閉する。即ち、第一ドアバルブ５５が下方にスライド移動すると、第二ドアバルブ５６も下方にスライド移動する（図３参照）。一方、第一ドアバルブ５５が上方にスライド移動すると、第二ドアバルブ５６も上方にスライド移動する（図２参照）。 Further, a second door valve 56 for opening and closing the carry-in / out portion 36 is provided on the inner side surface 33 constituting the side wall 34 of the vacuum chamber 2. The second door valve 56 is slidable in the vertical direction. The second door valve 56 has a surface portion 56a and an end portion 56b. The surface portion 56a and the inner side surface 33 of the vacuum chamber 2 are on the same plane. The second door valve 56 opens and closes the loading / unloading portion 36 in synchronization with the operation of the first door valve 55. That is, when the first door valve 55 slides downward, the second door valve 56 also slides downward (see FIG. 3). On the other hand, when the first door valve 55 slides upward, the second door valve 56 also slides upward (see FIG. 2).
　また、第二ドアバルブ５６の端部５６ｂには、全体に導電性を有するコイルスプリング５７（弾性部材）が設けられている。即ち、第二ドアバルブ５６の閉動作の際、端部５６ｂは搬出入部３６の内周面に接触せず、コイルスプリング５７と搬出入部３６の内周面とが接触する。第二ドアバルブ５６の閉状態においては、第二ドアバルブ５６の端部５６ｂと真空チャンバ２とは、コイルスプリング５７を介して電気的に接続される。 Further, the end 56b of the second door valve 56 is provided with a coil spring 57 (elastic member) having conductivity as a whole. That is, when the second door valve 56 is closed, the end 56 b does not contact the inner peripheral surface of the carry-in / out portion 36, and the coil spring 57 and the inner peripheral surface of the carry-in / out portion 36 come into contact. In the closed state of the second door valve 56, the end portion 56 b of the second door valve 56 and the vacuum chamber 2 are electrically connected via the coil spring 57.
　次に、図１～図３に基づいて、プラズマ処理装置１を用いて基板１０の処理面１０ａに膜を形成する場合の作用について説明する。
　まず、真空ポンプ２８を用いて真空チャンバ２内を減圧する。真空チャンバ２内が真空に維持された状態で、第一ドアバルブ５５及び第二ドアバルブ５６が開き（図３参照）、真空チャンバ２の搬出入部３６を介して、真空チャンバ２の外部から成膜空間２ａに向けて基板１０が搬入される。基板１０は、ヒータ１５上に載置される。基板１０を搬入した後、図２に示すように、第一ドアバルブ５５及び第二ドアバルブ５６が閉じる（閉動作）。 Next, the operation when a film is formed on the processing surface 10a of the substrate 10 using the plasma processing apparatus 1 will be described with reference to FIGS.
First, the vacuum chamber 2 is depressurized using the vacuum pump 28. The first door valve 55 and the second door valve 56 are opened in a state where the inside of the vacuum chamber 2 is maintained in a vacuum (see FIG. 3), and the film formation space is formed from the outside of the vacuum chamber 2 through the loading / unloading portion 36 of the vacuum chamber 2. The board | substrate 10 is carried in toward 2a. The substrate 10 is placed on the heater 15. After the board | substrate 10 is carried in, as shown in FIG. 2, the 1st door valve 55 and the 2nd door valve 56 close (close operation).
　基板１０を載置する前は、ヒータ１５は真空チャンバ２内の下方に位置している。つまり、ヒータ１５とシャワープレート５との間隔が広くなっているので、ロボットアーム（不図示）を用いて基板１０をヒータ１５上に容易に載置することができる。
　また、アースプレート３０は可撓性を有しているので、ヒータ１５が真空チャンバ２内の下方に位置しているときであっても、アースプレート３０の第２端は、真空チャンバ２の底部１１に接触されている（図３参照）。 Before the substrate 10 is placed, the heater 15 is positioned below the vacuum chamber 2. That is, since the space | interval of the heater 15 and the shower plate 5 is wide, the board | substrate 10 can be easily mounted on the heater 15 using a robot arm (not shown).
Further, since the earth plate 30 is flexible, the second end of the earth plate 30 is located at the bottom of the vacuum chamber 2 even when the heater 15 is positioned below the inside of the vacuum chamber 2. 11 (see FIG. 3).
　基板１０がヒータ１５上に載置された後には、昇降機構（不図示）が起動し、支柱２５が上方へ押し上げられ、ヒータ１５上に載置された基板１０も上方へ移動する。これによって、適切に成膜を行うために必要な間隔になるようにシャワープレート５と基板１０との間隔が所望に決定され、この間隔が維持される。
　具体的には、基板１０の処理面１０ａとシャワープレート５との間の距離Ｇ１は、３ｍｍ以上、１０ｍｍ以下であり、即ち、ナローギャップに設定される。 After the substrate 10 is placed on the heater 15, an elevating mechanism (not shown) is activated, the column 25 is pushed upward, and the substrate 10 placed on the heater 15 also moves upward. As a result, the interval between the shower plate 5 and the substrate 10 is determined as desired so that the interval necessary for proper film formation is achieved, and this interval is maintained.
Specifically, the distance G1 between the processing surface 10a of the substrate 10 and the shower plate 5 is 3 mm or more and 10 mm or less, that is, a narrow gap is set.
　その後、プロセスガス供給部２１からガス導入管７及びガス導入口４２を介して空間２４にプロセスガスが導入される。そして、シャワープレート５のガス噴出口６から成膜空間２ａ内にプロセスガスが噴出される。
　次に、ＲＦ電源９を起動して電極フランジ４に高周波電力を印加する。
　すると、電極フランジ４の表面からシャワープレート５の表面を伝って高周波電流が流れ、シャワープレート５とヒータ１５との間に放電が生じる。そして、シャワープレート５と基板１０の処理面１０ａとの間にプラズマが発生する。
　こうして発生したプラズマ内でプロセスガスが分解され、プラズマ状態のプロセスガスが得られ、基板１０の処理面１０ａで気相成長反応が生じ、薄膜が処理面１０ａ上に成膜される。 Thereafter, the process gas is introduced into the space 24 from the process gas supply unit 21 through the gas introduction pipe 7 and the gas introduction port 42. Then, a process gas is ejected from the gas ejection port 6 of the shower plate 5 into the film formation space 2a.
Next, the RF power source 9 is activated to apply high frequency power to the electrode flange 4.
Then, a high-frequency current flows from the surface of the electrode flange 4 to the surface of the shower plate 5, and discharge occurs between the shower plate 5 and the heater 15. Then, plasma is generated between the shower plate 5 and the processing surface 10 a of the substrate 10.
The process gas is decomposed in the plasma thus generated to obtain a plasma process gas, a vapor phase growth reaction occurs on the processing surface 10a of the substrate 10, and a thin film is formed on the processing surface 10a.
　ヒータ１５に伝達された高周波電流は、アースプレート３０を介して真空チャンバ２の底部１１の内面に流れる。そして、高周波電流は、シールドカバー１３を伝ってリターンされる（リターン電流）。
　このとき、真空チャンバ２の搬出入部３６が形成されていない部分において、リターン電流は、真空チャンバ２の底部１１から側壁３４の内側面３３を伝ってシールドカバー１３へと伝達される（図１の右側参照）。 The high-frequency current transmitted to the heater 15 flows to the inner surface of the bottom 11 of the vacuum chamber 2 through the earth plate 30. The high-frequency current is returned through the shield cover 13 (return current).
At this time, in a portion where the carry-in / out portion 36 of the vacuum chamber 2 is not formed, the return current is transmitted from the bottom 11 of the vacuum chamber 2 to the inner surface 33 of the side wall 34 to the shield cover 13 (see FIG. 1). See right).
　一方、真空チャンバ２の搬出入部３６が形成されている部分においては、リターン電流は、真空チャンバ２の底部１１から、第二ドアバルブ５６の面部５６ａ及び端部５６ｂに形成されたコイルスプリング５７を伝ってシールドカバー１３へと伝達される（図１の左側及び図２参照）。従って、搬出入部３６の内面に高周波電流が流れることが防止される。
　第二ドアバルブ５６の面部５６ａと真空チャンバ２の内側面３３とは同一平面上にある。このため、高周波電流が第二ドアバルブ５６の面部５６ａを流れる場合のリターン経路の距離と、真空チャンバ２の内側面３３を流れる場合のリターン経路の距離は同一になる。
　このため、リターン電流の経路において、つまり、真空チャンバ２の内側面３３の全周において、搬出入部３６の有無に関わらず、インダクタンスが同一に設定されている。 On the other hand, in the part where the carry-in / out part 36 of the vacuum chamber 2 is formed, the return current is transmitted from the bottom part 11 of the vacuum chamber 2 to the coil spring 57 formed on the surface part 56 a and the end part 56 b of the second door valve 56. Is transmitted to the shield cover 13 (see the left side of FIG. 1 and FIG. 2). Therefore, high-frequency current is prevented from flowing through the inner surface of the carry-in / out section 36.
The surface portion 56a of the second door valve 56 and the inner surface 33 of the vacuum chamber 2 are on the same plane. For this reason, the distance of the return path when the high-frequency current flows through the surface portion 56 a of the second door valve 56 is the same as the distance of the return path when the high-frequency current flows through the inner surface 33 of the vacuum chamber 2.
For this reason, in the return current path, that is, in the entire circumference of the inner surface 33 of the vacuum chamber 2, the inductance is set to be the same regardless of the presence / absence of the carry-in / out portion 36.
　また、上記のような成膜工程が何度か繰り返されると、真空チャンバ２の内側面３３などに成膜材料が付着するため、真空チャンバ２内は定期的にクリーニングされる。クリーニング工程においては、フッ素ガス供給部２２から供給されたフッ素ガスがラジカル源２３によって分解され、フッ素ラジカルが生じ、フッ素ラジカルが真空チャンバ２に接続されたガス導入管８を通り、真空チャンバ２内に供給される。このように真空チャンバ２内の成膜空間２ａにフッ素ラジカルを供給することによって、化学反応が生じ、成膜空間２ａの周囲に配置された部材又は真空チャンバ２の内壁面に付着された付着物が除去される。 Further, when the film forming process as described above is repeated several times, the film forming material adheres to the inner surface 33 of the vacuum chamber 2 and the like, so that the inside of the vacuum chamber 2 is periodically cleaned. In the cleaning process, the fluorine gas supplied from the fluorine gas supply unit 22 is decomposed by the radical source 23 to generate fluorine radicals. The fluorine radicals pass through the gas introduction pipe 8 connected to the vacuum chamber 2 and pass through the vacuum chamber 2. To be supplied. By supplying fluorine radicals to the film formation space 2a in the vacuum chamber 2 in this way, a chemical reaction occurs, and deposits attached to the members disposed around the film formation space 2a or the inner wall surface of the vacuum chamber 2 Is removed.
　次に、図１、図４、図５に基づいて、本発明の実施例を具体的に示して説明する。なお、本発明は、以下に記載された実施例に限定されない。
　図４は、プラズマ処理装置１を構成する部品のサイズ及び稼働条件を示す表である。図５は、従来のプラズマ処理装置と本発明のプラズマ処理装置とを比較した表であり、図４に示す条件に基づいて電極フランジ４に印加（投入）できる高周波電圧Ｐｆ（Ｋｗ）の大きさを示している。 Next, based on FIG. 1, FIG. 4, FIG. 5, the Example of this invention is shown concretely and demonstrated. In addition, this invention is not limited to the Example described below.
FIG. 4 is a table showing the sizes and operating conditions of the parts constituting the plasma processing apparatus 1. FIG. 5 is a table comparing the conventional plasma processing apparatus and the plasma processing apparatus of the present invention. The magnitude of the high-frequency voltage Pf (Kw) that can be applied (applied) to the electrode flange 4 based on the conditions shown in FIG. Is shown.
　図１、図４に示すように、電極サイズの面積、つまり、基板１０に対向するシャワープレート５の領域の長手方向の長さＬ１が１，６００ｍｍに設定され、かつ短手方向の長さが１，３００ｍｍに設定されている。また、サセプターサイズ、つまり、アノード電極７２であるヒータ１５に基板１０が載置されている領域の長手方向の長さＬ２が１，７００ｍｍに設定され、かつ短手方向の長さが１，４００ｍｍに設定されている。更に、ＲＦ電源９のＲＦ周波数が２７．１２ＭＨｚに設定されている。そして、プロセスガス供給部２１から空間２４へ導入されるプロセスガスの種類及び流量としては、１（ｓｌｍ）のＳｉＨ４（モノシラン）及び２５（ｓｌｍ）のＨ２（水素）が用いられている。 As shown in FIGS. 1 and 4, the area of the electrode size, that is, the length L1 in the longitudinal direction of the region of the shower plate 5 facing the substrate 10 is set to 1,600 mm, and the length in the short direction is It is set to 1,300 mm. Further, the susceptor size, that is, the length L2 in the longitudinal direction of the region where the substrate 10 is placed on the heater 15 which is the anode electrode 72 is set to 1,700 mm, and the length in the short direction is 1,400 mm. Is set to Further, the RF frequency of the RF power source 9 is set to 27.12 MHz. As the type and flow rate of the process gas introduced from the process gas supply unit 21 into the space 24, 1 (slm) SiH 4 (monosilane) and 25 (slm) H 2 (hydrogen) are used.
　このような条件のもと、基板１０の処理面１０ａとシャワープレート５との間の距離Ｇ１を４ｍｍ～１０ｍｍの範囲に変化させ、成膜空間２ａの圧力を７００Ｐａ～２０００Ｐａの範囲に変化させた。このような条件及び範囲において、電極フランジ４に印加できる高周波電圧Ｐｆ（Ｋｗ）の大きさを測定し、従来と本発明とを比較した。また、このような条件のもと、基板１０の処理面１０ａに、μｃ－Ｓｉ膜を形成した。
　図５に示すように、全ての距離Ｇ１の条件（ＥＳ）、及び全ての圧力条件において、本発明のプラズマ処理装置１は、従来よりも電極フランジ４に印加できる高周波電力が大きくなるという結果を得た。 Under such conditions, the distance G1 between the processing surface 10a of the substrate 10 and the shower plate 5 was changed to a range of 4 mm to 10 mm, and the pressure in the film formation space 2a was changed to a range of 700 Pa to 2000 Pa. . Under such conditions and ranges, the magnitude of the high-frequency voltage Pf (Kw) that can be applied to the electrode flange 4 was measured, and the conventional and the present invention were compared. Further, a μc-Si film was formed on the processing surface 10a of the substrate 10 under such conditions.
As shown in FIG. 5, the plasma processing apparatus 1 of the present invention has the result that the high-frequency power that can be applied to the electrode flange 4 is larger than that in the conventional case in all the conditions (ES) of the distance G1 and all the pressure conditions. Obtained.
　従って、上述の実施形態によれば、真空チャンバ２の搬出入部３６におけるリターン電流の経路として、第二ドアバルブ５６の面部５６ａ上に高周波電流を流すことができる。このため、第一ドアバルブ５５にリターン電流が流れる場合と比較して、搬出入部３６近傍におけるインダクタンスを低下させることができる。つまり、リターン電流の経路上、真空チャンバ２の内側面３３の全周において、搬出入部３６の有無に関わらず、インダクタンスが同一に設定されている。
　また、第二ドアバルブ５６を設けることによって、第一ドアバルブ５５と搬出入部とによって囲まれた放電空間（図１における空間Ｋ）を閉塞することができる。従って、プラズマを発生させる際、搬出入部３６内における異常放電を防止でき、電極フランジ４に印加できる高周波電圧を大きくすることができる。 Therefore, according to the above-described embodiment, a high-frequency current can flow on the surface portion 56 a of the second door valve 56 as a return current path in the carry-in / out portion 36 of the vacuum chamber 2. For this reason, compared with the case where a return electric current flows into the 1st door valve 55, the inductance in the carrying in / out part 36 vicinity can be reduced. That is, on the return current path, the inductance is set to be the same on the entire circumference of the inner surface 33 of the vacuum chamber 2 regardless of the presence / absence of the loading / unloading portion 36.
Further, by providing the second door valve 56, the discharge space (the space K in FIG. 1) surrounded by the first door valve 55 and the carry-in / out section can be closed. Therefore, when plasma is generated, abnormal discharge in the carry-in / out section 36 can be prevented, and the high-frequency voltage that can be applied to the electrode flange 4 can be increased.
　また、第二ドアバルブ５６の端部５６ｂに、導電性を有するコイルスプリング５７が設けられているので、第二ドアバルブ５６と真空チャンバ２との電気的接続を維持しつつ、第二ドアバルブ５６を閉じる際の端部５６ｂと搬出入部３６との衝突を防止することができる。このため、第二ドアバルブ５６又は真空チャンバ２の損傷を防止でき、部品寿命を長くすることができる。 Moreover, since the coil spring 57 which has electroconductivity is provided in the edge part 56b of the 2nd door valve 56, the 2nd door valve 56 is closed, maintaining the electrical connection of the 2nd door valve 56 and the vacuum chamber 2. FIG. Collision between the end portion 56b and the carry-in / out portion 36 can be prevented. For this reason, damage to the second door valve 56 or the vacuum chamber 2 can be prevented, and the component life can be extended.
　なお、本発明の技術範囲は、上記実施形態に限定されることなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることが可能である。即ち、本実施形態で述べた具体的な材料又は構成等は本発明の一例であり、適宜変更が可能である。
　上述の実施形態において、第一ドアバルブ５５及び第二ドアバルブ５６が上下方向にスライドするように設けられ、ドアバルブ５５，５６が上方にスライド移動したとき搬出入部３６が閉口され、ドアバルブ５５，５６が下方にスライド移動したとき搬出入部３６が開口される構造について説明した。しかしながら、このような構造に限られず、各ドアバルブ５５，５６が基板１０を搬出・搬入可能に排出入口を開閉する構造であれば、他の構造が採用されてもよい。例えば、ドアバルブ５５，５６が上方にスライド移動したとき搬出入部３６を開口し、ドアバルブ５５，５６が下方にスライド移動したとき搬出入部３６を閉口する構造が採用されてもよい。また、各ドアバルブ５５，５６の構造として、ドアバルブが回転軸を中心に所定角度で回転することによって搬出入部３６が開閉される構造が採用されてもよい。 The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention. That is, the specific materials or configurations described in the present embodiment are examples of the present invention, and can be appropriately changed.
In the above-described embodiment, the first door valve 55 and the second door valve 56 are provided so as to slide in the vertical direction. When the door valves 55 and 56 slide upward, the loading / unloading portion 36 is closed, and the door valves 55 and 56 are moved downward. The structure in which the loading / unloading portion 36 is opened when the sliding movement is performed is described. However, the present invention is not limited to such a structure, and other structures may be adopted as long as each door valve 55, 56 opens and closes the discharge inlet so that the substrate 10 can be carried out and carried in. For example, a structure may be employed in which the loading / unloading portion 36 is opened when the door valves 55 and 56 slide upward, and the loading / unloading portion 36 is closed when the door valves 55 and 56 slide downward. Further, as the structure of each door valve 55, 56, a structure may be employed in which the loading / unloading portion 36 is opened and closed by the door valve rotating at a predetermined angle around the rotation axis.
　更に、上述の実施形態では、全体に導電性を有するコイルスプリング５７が第二ドアバルブ５６の端部５６ｂに設けられた構造について説明した。しかしながら、このような構造に限られず、コイルスプリング５７を端部５６ｂの全体に設けなくてもよい。 Furthermore, in the above-described embodiment, the structure in which the coil spring 57 having conductivity as a whole is provided at the end portion 56b of the second door valve 56 has been described. However, the present invention is not limited to this structure, and the coil spring 57 may not be provided on the entire end portion 56b.
　また、図６に示すように、第二ドアバルブ５６の端部５６ｂにコイルスプリング５７を設けず、端部５６ｂと搬出入部３６との間に１ｍｍ以下の極小の間隙Ｇ２が設けられた構造を採用してもよい。この構造においては、間隙Ｇ２の大きさは、端部５６ｂと搬出入部３６との間で通電可能に設定されている。つまり、高周波電圧が印加されている際に、リターン電流の経路として、端部５６ｂは容量結合を介して搬出入部３６に電気的に接続される。
　このような構造においては、第二ドアバルブ５６の端部５６ｂと搬出入部３６とが接触しないため、例えば、塵埃などが端部５６ｂと搬出入部３６との間に堆積することを防止できる。 Further, as shown in FIG. 6, the coil spring 57 is not provided at the end portion 56b of the second door valve 56, and a structure in which a minimal gap G2 of 1 mm or less is provided between the end portion 56b and the loading / unloading portion 36 is adopted. May be. In this structure, the size of the gap G2 is set such that energization is possible between the end portion 56b and the carry-in / out portion 36. That is, when a high-frequency voltage is applied, the end portion 56b is electrically connected to the carry-in / out portion 36 via capacitive coupling as a return current path.
In such a structure, since the end part 56b of the second door valve 56 and the carry-in / out part 36 do not contact each other, for example, dust or the like can be prevented from accumulating between the end part 56b and the carry-in / out part 36.
　更に、上述の実施例では、プラズマ処理装置１にプロセスガスとしてＳｉＨ４とＨ２との混合ガスを用い、基板１０の処理面１０ａにμｃ－Ｓｉ膜を形成した場合について説明した。しかしながら、このような膜種に限らず、プラズマ処理装置１を利用してａ－Ｓｉ（アモルファスシリコン），ＳｉＯ２（酸化膜），ＳｉＮ（チッカ膜），及びＳｉＣ（炭化膜）を形成することが可能である。また、基板１０に所望の膜を形成する成膜処理に代えて、エッチング処理を行うプラズマ処理装置に上述したプラズマ処理装置１を適用してもよい。この場合、それぞれの処理条件に応じてプロセスガスの種類又は流量が適切に変更される。 Further, in the above-described embodiment, the case where the plasma processing apparatus 1 uses a mixed gas of SiH 4 and H 2 as the process gas and the μc-Si film is formed on the processing surface 10a of the substrate 10 has been described. However, the present invention is not limited to such film types, and a-Si (amorphous silicon), SiO 2 (oxide film), SiN (ticker film), and SiC (carbonized film) are formed using the plasma processing apparatus 1. Is possible. Further, instead of the film forming process for forming a desired film on the substrate 10, the above-described plasma processing apparatus 1 may be applied to a plasma processing apparatus that performs an etching process. In this case, the type or flow rate of the process gas is appropriately changed according to each processing condition.
　以上詳述したように、本発明は、搬出入部における異常放電を防止し、印加可能な高周波電圧を大きくすることができるプラズマ処理装置に有用である。 As described in detail above, the present invention is useful for a plasma processing apparatus that can prevent an abnormal discharge at the carry-in / out section and increase the applicable high-frequency voltage.
　１…プラズマ処理装置　２…真空チャンバ（チャンバ）　２ａ…成膜空間（反応室）　４…電極フランジ　５…シャワープレート　９…ＲＦ電源（電圧印加部）　１０…基板　１０ａ…処理面　１５…ヒータ（支持部）　３０…アースプレート（プレート部材）　３３…内側面　３４…側壁　３５…外側面　３６…搬出入部　５５…第一ドアバルブ　５６…第二ドアバルブ　５６ａ…面部　５６ｂ…端部　５７…コイルスプリング（弾性部材）　８１…絶縁フランジ　１０１…処理室　Ｇ２…間隙。 DESCRIPTION OF SYMBOLS 1 ... Plasma processing apparatus 2 ... Vacuum chamber (chamber) 2a ... Film-forming space (reaction chamber) 4 ... Electrode flange 5 ... Shower plate 9 ... RF power supply (voltage application part) 10 ... Substrate 10a ... Processing surface 15 ... Heater (support) Part) 30 ... Earth plate (plate member) 33 ... Inner side 34 ... Side wall 35 ... Outer side 36 ... Loading / unloading part 55 ... First door valve 56 ... Second door valve 56a ... Face part 56b ... End part 57 ... Coil spring (elastic member) 81 ... Insulating flange 101 ... Processing chamber G2 ... Gap.

Claims (4)

  1. 　プラズマ処理装置であって、
    　側壁を有するチャンバと、電極フランジと、前記チャンバ及び前記電極フランジによって挟まれた絶縁フランジとから構成され、反応室を有する処理室と、
    　前記反応室内に収容され、処理面を有する基板が載置され、前記基板の温度を制御する支持部と、
    　前記チャンバの前記側壁に設けられ、前記反応室に前記基板を搬出又は搬入するために用いられる搬出入部と、
    　前記電極フランジに接続され、高周波電圧を印加するＲＦ電源と、
    　前記搬出入部に設けられ、前記搬出入部を開閉する第一ドアバルブと、
    　前記チャンバと電気的に接続され、前記チャンバの内側面と同一平面上に位置する面部を有する第二ドアバルブと、
    　を含むことを特徴とするプラズマ処理装置。     A plasma processing apparatus,
    A processing chamber having a reaction chamber, the chamber having a side wall, an electrode flange, and an insulating flange sandwiched between the chamber and the electrode flange;
    A support housed in the reaction chamber, on which a substrate having a processing surface is placed, and controlling the temperature of the substrate;
    A loading / unloading portion provided on the side wall of the chamber and used for unloading or loading the substrate into the reaction chamber;
    An RF power source connected to the electrode flange and applying a high frequency voltage;
    A first door valve that is provided in the carry-in / out section and opens and closes the carry-in / out section;
    A second door valve electrically connected to the chamber and having a surface portion located on the same plane as the inner surface of the chamber;
    A plasma processing apparatus comprising:
  2. 　請求項１に記載のプラズマ処理装置であって、
    　前記第二ドアバルブは、導電性を有する弾性部材が設けられる端部を有することを特徴とするプラズマ処理装置。     The plasma processing apparatus according to claim 1,
    The plasma processing apparatus, wherein the second door valve has an end portion on which a conductive elastic member is provided.
  3. 　請求項１に記載のプラズマ処理装置であって、
    　前記第二ドアバルブと前記チャンバとの間に間隙が設けられ、前記第二ドアバルブと前記チャンバとが電気的に接続されることを特徴とするプラズマ処理装置。     The plasma processing apparatus according to claim 1,
    A plasma processing apparatus, wherein a gap is provided between the second door valve and the chamber, and the second door valve and the chamber are electrically connected.
  4. 　請求項１に記載のプラズマ処理装置であって、
    　前記反応室内に収容され、前記処理面に対向するように配置され、前記基板に向けてプロセスガスを供給するシャワープレートを含むことを特徴とするプラズマ処理装置。     The plasma processing apparatus according to claim 1,
    A plasma processing apparatus, comprising: a shower plate that is accommodated in the reaction chamber, is disposed so as to face the processing surface, and supplies a process gas toward the substrate.
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