WO2010079756A1 - Appareil de traitement par plasma - Google Patents

Appareil de traitement par plasma Download PDF

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Publication number
WO2010079756A1
WO2010079756A1 PCT/JP2010/000067 JP2010000067W WO2010079756A1 WO 2010079756 A1 WO2010079756 A1 WO 2010079756A1 JP 2010000067 W JP2010000067 W JP 2010000067W WO 2010079756 A1 WO2010079756 A1 WO 2010079756A1
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WO
WIPO (PCT)
Prior art keywords
chamber
door valve
processing apparatus
plasma processing
substrate
Prior art date
Application number
PCT/JP2010/000067
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English (en)
Japanese (ja)
Inventor
若松貞次
亀崎厚治
菊池正志
神保洋介
江藤謙次
浅利伸
内田寛人
Original Assignee
株式会社アルバック
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to JP2010545749A priority Critical patent/JPWO2010079756A1/ja
Priority to DE112010000781T priority patent/DE112010000781T5/de
Priority to KR1020117015408A priority patent/KR101289770B1/ko
Priority to CN2010800041209A priority patent/CN102272895A/zh
Publication of WO2010079756A1 publication Critical patent/WO2010079756A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Definitions

  • the present invention relates to a plasma processing apparatus.
  • This application claims priority based on Japanese Patent Application No. 2009-004025 filed on Jan. 9, 2009, the contents of which are incorporated herein by reference.
  • a plasma processing apparatus that decomposes a source gas using plasma and forms a thin film on a film formation surface of a substrate, for example.
  • 302 forms a processing chamber 301.
  • a shower plate 306 connected to an electrode flange and having a plurality of jet nozzles, and a heater 308 on which a substrate 307 is disposed.
  • a space 309 formed between the shower plate 306 and the electrode flange 304 is a gas introduction space into which the source gas is introduced. That is, the shower plate 30 divides the inside of the processing chamber 301 into a film formation space 305 in which a film is formed on the substrate 307 and a gas introduction space (space 309).
  • a ground plate 310 is connected to the heater 308.
  • the other end of the ground plate 310 is electrically connected to the vicinity of the inner bottom surface of the chamber 303.
  • the chamber 303 is connected to the ground potential.
  • the heater 308 functions as an anode electrode.
  • a high frequency power supply 311 is connected to the electrode flange 304.
  • the electrode flange 304 and the shower plate 306 function as a cathode electrode.
  • a shield cover 312 formed so as to cover the electrode flange 304 and connected to the chamber 303 is provided around the electrode flange 304.
  • the gas introduced into the gas introduction space is uniformly ejected from each ejection port of the shower plate 306 into the film formation space.
  • a high frequency power source is activated to apply a high frequency voltage to the electrode flange 304, and plasma is generated in the film formation space.
  • a desired film is formed by the source gas decomposed by the plasma reaching the film formation surface of the substrate.
  • the side wall of the chamber 303 is provided with a loading / unloading portion 313 used for unloading or loading the substrate 307 into / from the chamber 303, and a door valve 314 for opening and closing the substrate 307 is provided.
  • the path of the high-frequency current flowing through the inner surface of the chamber 303 where the carry-in / out part 313 is formed is longer than the path of the high-frequency current flowing through the inner surface of the chamber 303 where the carry-in / out part 313 is not formed.
  • the inductance increases in the path of the high-frequency current flowing through the inner surface where the carry-in / out section 313 is formed.
  • the present invention has been made in view of the above-described circumstances, and provides a plasma processing apparatus that can prevent an abnormal discharge at a carry-in / out section and increase an applicable high-frequency voltage.
  • a plasma processing apparatus of the present invention includes a chamber having a side wall, an electrode flange, an insulating flange sandwiched between the chamber and the electrode flange, and a processing chamber having a reaction chamber.
  • a substrate housed in the reaction chamber and having a processing surface is placed thereon, is provided on a side wall of the chamber, and a support unit that controls the temperature of the substrate, and unloads or carries the substrate into the reaction chamber.
  • a loading / unloading unit used for connecting the electrode flange, an RF power source for applying a high-frequency voltage, a first door valve provided in the loading / unloading unit for opening and closing the loading / unloading unit, and the chamber being electrically connected.
  • a second door valve having a surface portion located on the same plane as the inner surface of the chamber.
  • a current can be passed over the surface portion of the second door valve as a return current path in the carry-in / out portion.
  • the inductance in the vicinity of the carry-in / out section can be reduced.
  • the discharge space surrounded by the first door valve and the carry-in / out section can be closed. Therefore, when generating plasma, abnormal discharge in the carry-in / out section can be prevented, and the high-frequency voltage that can be applied to the electrode flange can be increased.
  • a said 2nd door valve has an edge part in which the elastic member which has electroconductivity is provided.
  • the second door valve and the chamber are electrically connected, and a current can be passed between the second door valve and the chamber as a return current path.
  • it can prevent that an edge part and a carrying in / out part collide. For this reason, damage to the second door valve or the chamber can be prevented, and the component life can be extended.
  • a gap is provided between the second door valve and the chamber, and the second door valve and the chamber are electrically connected.
  • a minimal gap of 1 mm or less is provided between the second door valve and the chamber.
  • the plasma processing apparatus of the present invention preferably includes a shower plate that is accommodated in the reaction chamber, is disposed to face the processing surface, and supplies a process gas toward the substrate.
  • the shower plate supplies the process gas
  • the RF power supply supplies the high-frequency voltage, so that the plasma-state process gas is obtained, the vapor phase growth reaction occurs on the processing surface of the substrate, and the thin film is processed.
  • a film can be formed on the surface.
  • a current can be passed over the surface portion of the second door valve as a return current path in the carry-in / out portion. For this reason, the inductance in the vicinity of the carry-in / out section can be reduced. Further, by providing the second door valve, the discharge space surrounded by the first door valve and the carry-in / out section can be closed. Therefore, when generating plasma, abnormal discharge in the carry-in / out section can be prevented, and the high-frequency voltage that can be applied to the electrode flange can be increased.
  • FIG. 1 is a schematic cross-sectional view showing a configuration of a plasma processing apparatus 1 in the present embodiment.
  • a plasma processing apparatus 1 that performs a plasma CVD method includes a processing chamber 101 having a film formation space 2a that is a reaction chamber.
  • the processing chamber 101 includes a vacuum chamber 2 (chamber), an electrode flange 4, and an insulating flange 81 sandwiched between the vacuum chamber 2 and the electrode flange 4.
  • An opening is formed in the bottom 11 (inner bottom surface) of the vacuum chamber 2.
  • a support column 25 is inserted into the opening, and the support column 25 is disposed in the lower portion of the vacuum chamber 2.
  • a plate-like heater 15 (support portion) is connected to the tip of the support column 25 (in the vacuum chamber 2).
  • an exhaust pipe 27 is connected to the vacuum chamber 2.
  • a vacuum pump 28 is provided at the tip of the exhaust pipe 27. The vacuum pump 28 reduces the pressure so that the inside of the vacuum chamber 2 is in a vacuum state.
  • the support column 25 is connected to an elevating mechanism (not shown) provided outside the vacuum chamber 2 and can move up and down in the vertical direction of the substrate 10. That is, the heater 15 connected to the tip of the support column 25 is configured to be able to move up and down in the vertical direction.
  • a bellows (not shown) is provided outside the vacuum chamber 2 so as to cover the outer periphery of the support column 25.
  • the electrode flange 4 has an upper wall 41 and a peripheral wall 43.
  • the electrode flange 4 is disposed such that the opening of the electrode flange 4 is positioned below in the vertical direction of the substrate 10.
  • a shower plate 5 is attached to the opening of the electrode flange 4.
  • a space 24 is formed between the electrode flange 4 and the shower plate 5.
  • the upper wall 41 of the electrode flange 4 faces the shower plate 5.
  • a gas inlet 42 is provided in the upper wall 41.
  • a gas introduction pipe 7 is provided between the process gas supply unit 21 and the gas introduction port 42 provided outside the processing chamber 101. One end of the gas introduction pipe 7 is connected to the gas introduction port 42, and the other end is connected to the process gas supply unit 21. Further, the gas introduction pipe 7 penetrates a shield cover 13 described later. Further, the process gas is supplied from the process gas supply unit 21 to the space 24 through the gas introduction pipe 7. That is, the space 24 functions as a gas introduction space into which process gas is introduced.
  • the electrode flange 4 and the shower plate 5 are each made of a conductive material.
  • a shield cover 13 is provided around the electrode flange 4 so as to cover the electrode flange 4.
  • the shield cover 13 is not in contact with the electrode flange 4 and is disposed so as to be continuous with the opening peripheral edge portion 14 of the vacuum chamber 2.
  • An RF power source 9 (high frequency power source) provided outside the vacuum chamber 2 is connected to the electrode flange 4 via a matching box 12.
  • the matching box 12 is attached to the shield cover 13.
  • the vacuum chamber 2 is grounded via the shield cover 13.
  • the electrode flange 4 and the shower plate 5 are configured as a cathode electrode 71.
  • a plurality of gas jets 6 are formed in the shower plate 5. The process gas introduced into the space 24 is ejected from the gas ejection port 6 into the film formation space 2 a in the vacuum chamber 2.
  • a gas introduction pipe 8 different from the gas introduction pipe 7 is connected to the film forming space 2 a of the vacuum chamber 2.
  • the gas introduction pipe 8 is provided with a fluorine gas supply unit 22 and a radical source 23.
  • the radical source 23 decomposes the fluorine gas supplied from the fluorine gas supply unit 22.
  • the gas introduction pipe 8 supplies fluorine radicals obtained by decomposing fluorine gas to the film formation space 2 a in the vacuum chamber 2.
  • the heater 15 is a plate-like member having a flat surface.
  • the substrate 10 is placed on the upper surface of the heater 15.
  • the heater 15 functions as a ground electrode, that is, an anode electrode 72.
  • the heater 15 is made of, for example, an aluminum alloy having conductivity.
  • the distance (gap) G1 between the processing surface 10a of the substrate 10 and the shower plate 5 is set to a narrow gap of 3 mm or more and 10 mm or less.
  • the gas hole 6 formed in the shower plate 5 is formed on the processing surface 10a of the substrate 10 when the minimum (limit) hole diameter is set to 0.3 mm.
  • the quality of the film may be affected by the hole diameter of the gas outlet 6 of the shower plate 5. Further, when the distance G1 is larger than 10 mm, powder may be generated during film formation.
  • a heater wire 16 is provided inside the heater 15.
  • the temperature of the heater 15 is adjusted to a predetermined temperature by the heater wire 16.
  • the heater wire 16 protrudes from a back surface 17 at a substantially central portion of the heater 15 as viewed from the vertical direction of the heater 15.
  • the heater wire 16 is inserted into a through hole 18 and a support column 25 formed in the substantially central portion of the heater 15 and led to the outside of the vacuum chamber 2.
  • the heater wire 16 is connected to a power source (not shown) outside the vacuum chamber 2 and adjusts the temperature of the heater 15 according to the power supplied from the power source.
  • a plurality of first ends (one ends) of a flexible earth plate 30 are connected to the outer peripheral edge of the heater 15 via attachment members 30a.
  • the ground plates 30 are arranged at substantially equal intervals along the outer peripheral edge of the heater 15.
  • the ground plate 30 electrically connects the heater 15 and the vacuum chamber 2.
  • the second end (the other end) of the earth plate 30 is electrically connected to the bottom 11 of the vacuum chamber 2.
  • the heater 15 functions as the anode electrode 72.
  • the earth plate 30 is made of, for example, a nickel alloy or an aluminum alloy.
  • the side wall 34 of the vacuum chamber 2 is formed with a loading / unloading portion 36 (loading / unloading port) used for unloading or loading the substrate 10.
  • a first door valve 55 that opens and closes the loading / unloading portion 36 is provided on the outer surface 35 constituting the side wall 34 of the vacuum chamber 2.
  • the first door valve 55 is slidable in the vertical direction.
  • the carry-in / out section 36 is opened, and the substrate 10 can be carried out or carried in (see FIG. 3).
  • the carry-in / out section 36 is closed, and the processing (film formation processing) of the substrate 10 can be performed (see FIG. 2). .
  • a second door valve 56 for opening and closing the carry-in / out portion 36 is provided on the inner side surface 33 constituting the side wall 34 of the vacuum chamber 2.
  • the second door valve 56 is slidable in the vertical direction.
  • the second door valve 56 has a surface portion 56a and an end portion 56b.
  • the surface portion 56a and the inner side surface 33 of the vacuum chamber 2 are on the same plane.
  • the second door valve 56 opens and closes the loading / unloading portion 36 in synchronization with the operation of the first door valve 55. That is, when the first door valve 55 slides downward, the second door valve 56 also slides downward (see FIG. 3). On the other hand, when the first door valve 55 slides upward, the second door valve 56 also slides upward (see FIG. 2).
  • the end 56b of the second door valve 56 is provided with a coil spring 57 (elastic member) having conductivity as a whole. That is, when the second door valve 56 is closed, the end 56 b does not contact the inner peripheral surface of the carry-in / out portion 36, and the coil spring 57 and the inner peripheral surface of the carry-in / out portion 36 come into contact. In the closed state of the second door valve 56, the end portion 56 b of the second door valve 56 and the vacuum chamber 2 are electrically connected via the coil spring 57.
  • a coil spring 57 elastic member
  • the vacuum chamber 2 is depressurized using the vacuum pump 28.
  • the first door valve 55 and the second door valve 56 are opened in a state where the inside of the vacuum chamber 2 is maintained in a vacuum (see FIG. 3), and the film formation space is formed from the outside of the vacuum chamber 2 through the loading / unloading portion 36 of the vacuum chamber 2.
  • substrate 10 is carried in toward 2a.
  • the substrate 10 is placed on the heater 15. After the board
  • the heater 15 Before the substrate 10 is placed, the heater 15 is positioned below the vacuum chamber 2. That is, since the space
  • the interval between the shower plate 5 and the substrate 10 is determined as desired so that the interval necessary for proper film formation is achieved, and this interval is maintained.
  • the distance G1 between the processing surface 10a of the substrate 10 and the shower plate 5 is 3 mm or more and 10 mm or less, that is, a narrow gap is set.
  • the process gas is introduced into the space 24 from the process gas supply unit 21 through the gas introduction pipe 7 and the gas introduction port 42. Then, a process gas is ejected from the gas ejection port 6 of the shower plate 5 into the film formation space 2a.
  • the RF power source 9 is activated to apply high frequency power to the electrode flange 4. Then, a high-frequency current flows from the surface of the electrode flange 4 to the surface of the shower plate 5, and discharge occurs between the shower plate 5 and the heater 15. Then, plasma is generated between the shower plate 5 and the processing surface 10 a of the substrate 10. The process gas is decomposed in the plasma thus generated to obtain a plasma process gas, a vapor phase growth reaction occurs on the processing surface 10a of the substrate 10, and a thin film is formed on the processing surface 10a.
  • the high-frequency current transmitted to the heater 15 flows to the inner surface of the bottom 11 of the vacuum chamber 2 through the earth plate 30.
  • the high-frequency current is returned through the shield cover 13 (return current).
  • the return current is transmitted from the bottom 11 of the vacuum chamber 2 to the inner surface 33 of the side wall 34 to the shield cover 13 (see FIG. 1). See right).
  • the return current is transmitted from the bottom part 11 of the vacuum chamber 2 to the coil spring 57 formed on the surface part 56 a and the end part 56 b of the second door valve 56. Is transmitted to the shield cover 13 (see the left side of FIG. 1 and FIG. 2). Therefore, high-frequency current is prevented from flowing through the inner surface of the carry-in / out section 36.
  • the surface portion 56a of the second door valve 56 and the inner surface 33 of the vacuum chamber 2 are on the same plane.
  • the distance of the return path when the high-frequency current flows through the surface portion 56 a of the second door valve 56 is the same as the distance of the return path when the high-frequency current flows through the inner surface 33 of the vacuum chamber 2.
  • the inductance is set to be the same regardless of the presence / absence of the carry-in / out portion 36.
  • the film forming material adheres to the inner surface 33 of the vacuum chamber 2 and the like, so that the inside of the vacuum chamber 2 is periodically cleaned.
  • the fluorine gas supplied from the fluorine gas supply unit 22 is decomposed by the radical source 23 to generate fluorine radicals.
  • the fluorine radicals pass through the gas introduction pipe 8 connected to the vacuum chamber 2 and pass through the vacuum chamber 2. To be supplied.
  • a chemical reaction occurs, and deposits attached to the members disposed around the film formation space 2a or the inner wall surface of the vacuum chamber 2 Is removed.
  • FIG. 4 is a table showing the sizes and operating conditions of the parts constituting the plasma processing apparatus 1.
  • FIG. 5 is a table comparing the conventional plasma processing apparatus and the plasma processing apparatus of the present invention. The magnitude of the high-frequency voltage Pf (Kw) that can be applied (applied) to the electrode flange 4 based on the conditions shown in FIG. Is shown.
  • the area of the electrode size that is, the length L1 in the longitudinal direction of the region of the shower plate 5 facing the substrate 10 is set to 1,600 mm, and the length in the short direction is It is set to 1,300 mm.
  • the susceptor size that is, the length L2 in the longitudinal direction of the region where the substrate 10 is placed on the heater 15 which is the anode electrode 72 is set to 1,700 mm, and the length in the short direction is 1,400 mm.
  • the RF frequency of the RF power source 9 is set to 27.12 MHz.
  • 1 (slm) SiH 4 (monosilane) and 25 (slm) H 2 (hydrogen) are used.
  • the distance G1 between the processing surface 10a of the substrate 10 and the shower plate 5 was changed to a range of 4 mm to 10 mm, and the pressure in the film formation space 2a was changed to a range of 700 Pa to 2000 Pa. .
  • the magnitude of the high-frequency voltage Pf (Kw) that can be applied to the electrode flange 4 was measured, and the conventional and the present invention were compared. Further, a ⁇ c-Si film was formed on the processing surface 10a of the substrate 10 under such conditions.
  • the plasma processing apparatus 1 of the present invention has the result that the high-frequency power that can be applied to the electrode flange 4 is larger than that in the conventional case in all the conditions (ES) of the distance G1 and all the pressure conditions. Obtained.
  • a high-frequency current can flow on the surface portion 56 a of the second door valve 56 as a return current path in the carry-in / out portion 36 of the vacuum chamber 2. For this reason, compared with the case where a return electric current flows into the 1st door valve 55, the inductance in the carrying in / out part 36 vicinity can be reduced. That is, on the return current path, the inductance is set to be the same on the entire circumference of the inner surface 33 of the vacuum chamber 2 regardless of the presence / absence of the loading / unloading portion 36. Further, by providing the second door valve 56, the discharge space (the space K in FIG. 1) surrounded by the first door valve 55 and the carry-in / out section can be closed. Therefore, when plasma is generated, abnormal discharge in the carry-in / out section 36 can be prevented, and the high-frequency voltage that can be applied to the electrode flange 4 can be increased.
  • the technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention. That is, the specific materials or configurations described in the present embodiment are examples of the present invention, and can be appropriately changed.
  • the first door valve 55 and the second door valve 56 are provided so as to slide in the vertical direction. When the door valves 55 and 56 slide upward, the loading / unloading portion 36 is closed, and the door valves 55 and 56 are moved downward. The structure in which the loading / unloading portion 36 is opened when the sliding movement is performed is described.
  • each door valve 55, 56 opens and closes the discharge inlet so that the substrate 10 can be carried out and carried in.
  • a structure may be employed in which the loading / unloading portion 36 is opened when the door valves 55 and 56 slide upward, and the loading / unloading portion 36 is closed when the door valves 55 and 56 slide downward.
  • a structure may be employed in which the loading / unloading portion 36 is opened and closed by the door valve rotating at a predetermined angle around the rotation axis.
  • the present invention is not limited to this structure, and the coil spring 57 may not be provided on the entire end portion 56b.
  • the coil spring 57 is not provided at the end portion 56b of the second door valve 56, and a structure in which a minimal gap G2 of 1 mm or less is provided between the end portion 56b and the loading / unloading portion 36 is adopted. May be.
  • the size of the gap G2 is set such that energization is possible between the end portion 56b and the carry-in / out portion 36. That is, when a high-frequency voltage is applied, the end portion 56b is electrically connected to the carry-in / out portion 36 via capacitive coupling as a return current path.
  • the plasma processing apparatus 1 uses a mixed gas of SiH 4 and H 2 as the process gas and the ⁇ c-Si film is formed on the processing surface 10a of the substrate 10 has been described.
  • the present invention is not limited to such film types, and a-Si (amorphous silicon), SiO 2 (oxide film), SiN (ticker film), and SiC (carbonized film) are formed using the plasma processing apparatus 1.
  • the above-described plasma processing apparatus 1 may be applied to a plasma processing apparatus that performs an etching process. In this case, the type or flow rate of the process gas is appropriately changed according to each processing condition.
  • the present invention is useful for a plasma processing apparatus that can prevent an abnormal discharge at the carry-in / out section and increase the applicable high-frequency voltage.

Abstract

L'invention porte sur un appareil de traitement par plasma qui comprend : une chambre de traitement (101) qui comprend une chambre de réaction (2a) et est constituée d'une chambre (2) ayant une paroi latérale (34), d'une bride d'électrode (4) et d'une bride isolante (81) intercalée entre la chambre (2) et la bride d'électrode (4) ; une partie de support (15) qui est agencée dans la chambre de réaction (2a) et sur laquelle est placé un substrat (10) ayant une surface devant être traitée (10a) ; un orifice d'entrée/sortie (36) qui est installé sur la paroi latérale (34) de la chambre (2) ; une alimentation électrique RF (9) qui est connectée à la bride d'électrode (4) et lui applique une tension haute fréquence ; une première vanne de porte (55) qui est installée sur l'orifice d'entrée/sortie (36) et ouvre/ferme l'orifice d'entrée/sortie (36) ; et une seconde vanne de porte (56) qui est électriquement connectée à la chambre (2) et comprend une partie de surface (56a) qui se trouve sur le même plan qu'une surface latérale interne (33) de la chambre (2).
PCT/JP2010/000067 2009-01-09 2010-01-07 Appareil de traitement par plasma WO2010079756A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010545749A JPWO2010079756A1 (ja) 2009-01-09 2010-01-07 プラズマ処理装置
DE112010000781T DE112010000781T5 (de) 2009-01-09 2010-01-07 Plasmaverarbeitungsvorrichtung
KR1020117015408A KR101289770B1 (ko) 2009-01-09 2010-01-07 플라즈마 처리 장치
CN2010800041209A CN102272895A (zh) 2009-01-09 2010-01-07 等离子体处理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-004025 2009-01-09
JP2009004025 2009-01-09

Publications (1)

Publication Number Publication Date
WO2010079756A1 true WO2010079756A1 (fr) 2010-07-15

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PCT/JP2010/000067 WO2010079756A1 (fr) 2009-01-09 2010-01-07 Appareil de traitement par plasma

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JP (1) JPWO2010079756A1 (fr)
KR (1) KR101289770B1 (fr)
CN (1) CN102272895A (fr)
DE (1) DE112010000781T5 (fr)
TW (1) TW201112885A (fr)
WO (1) WO2010079756A1 (fr)

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JP2012028682A (ja) * 2010-07-27 2012-02-09 Mitsubishi Electric Corp プラズマ装置およびこれを用いた半導体薄膜の製造方法
JP2012186248A (ja) * 2011-03-04 2012-09-27 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
KR101771604B1 (ko) 2012-03-30 2017-08-25 어플라이드 머티어리얼스, 인코포레이티드 무선 주파수(ｒｆ) 리턴 경로를 갖는 기판 지지부
WO2017221829A1 (fr) * 2016-06-22 2017-12-28 株式会社アルバック Appareil de traitement par plasma
JP2020181840A (ja) * 2019-04-23 2020-11-05 株式会社アルバック プラズマ処理装置
JP2020181839A (ja) * 2019-04-23 2020-11-05 株式会社アルバック プラズマ処理装置
CN112563158A (zh) * 2019-09-26 2021-03-26 株式会社爱发科 真空处理装置
KR20210089774A (ko) 2019-01-07 2021-07-16 가부시키가이샤 아루박 진공 처리 장치
KR20210090261A (ko) 2019-01-07 2021-07-19 가부시키가이샤 아루박 진공 처리 장치, 진공 처리 장치의 클리닝 방법

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JP7201398B2 (ja) * 2018-11-08 2023-01-10 株式会社日立ハイテク プラズマ処理装置
CN115341198B (zh) * 2022-07-05 2023-08-04 湖南红太阳光电科技有限公司 一种平板式pecvd设备

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JPWO2017221829A1 (ja) * 2016-06-22 2018-11-29 株式会社アルバック プラズマ処理装置
KR20190019965A (ko) 2016-06-22 2019-02-27 가부시키가이샤 아루박 플라즈마 처리장치
KR20210089774A (ko) 2019-01-07 2021-07-16 가부시키가이샤 아루박 진공 처리 장치
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KR20210090261A (ko) 2019-01-07 2021-07-19 가부시키가이샤 아루박 진공 처리 장치, 진공 처리 장치의 클리닝 방법
JP7245107B2 (ja) 2019-04-23 2023-03-23 株式会社アルバック プラズマ処理装置
JP2020181839A (ja) * 2019-04-23 2020-11-05 株式会社アルバック プラズマ処理装置
JP7264710B2 (ja) 2019-04-23 2023-04-25 株式会社アルバック プラズマ処理装置
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KR20210036807A (ko) 2019-09-26 2021-04-05 가부시키가이샤 아루박 진공 처리 장치
CN112563158A (zh) * 2019-09-26 2021-03-26 株式会社爱发科 真空处理装置
CN112563158B (zh) * 2019-09-26 2024-04-19 株式会社爱发科 真空处理装置

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TW201112885A (en) 2011-04-01
KR20110094113A (ko) 2011-08-19

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