JPWO2009104379A1 - 原子層成長装置および原子層成長方法 - Google Patents
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Abstract
Description
反応性ガスの供給孔が形成された壁によって囲まれた第1の室と、原料ガスの供給孔が形成された壁によって囲まれた第2の室と、前記第1の室内に設けられた、反応性ガスを用いてプラズマを生成するための、棒状の複数のアンテナ素子が平行に配設されたアンテナアレイと、前記第2の室内に設けられた、前記基板が載置される基板ステージと、前記第1の室から前記第2の室に、前記アンテナアレイにより生成されたラジカルを含むガスを供給するために、前記第1の室と前記第2の室とを接続する接続部材と、を備えている原子層成長装置を提供する。
また、前記供給管には、前記予備容器と前記成膜容器との導通を制御する開閉弁が設けられることが好ましい。
前記第1および第2の空間はいずれも成膜容器内の空間であり、前記接続部材は、前記アンテナアレイと前記基板ステージとの間に配設された、前記成膜容器内の空間を、前記第1の空間となる予備室と前記第2の空間となる成膜室とに分離する壁の役割を果たす仕切り板であり、前記仕切り板には複数の孔が形成されていることが好ましい。
前記反応性ガスは、例えば、酸化ガスあるいは窒化ガスである。
12 成膜容器
13 予備容器
14,15 ガス供給部
16,17 排気部
18a,18b、19 供給管
20a、20b、21a 供給孔
22,23 排気管
21b、24,25 排気孔
26,26a、26b アンテナ素子
28 アンテナアレイ
30 ヒータ
32 基板ステージ
34 高周波電力供給部
36 分配器
38,38a、38b インピーダンス整合器
39,39a、39b アンテナ本体
40,40a、40b 円筒部材
42 成膜対象基板(基板)
44 昇降機構
46 ヒータストッパ
47 予備室
48 成膜室
50 真空室
51 隙間
52 仕切り板
以下の説明は、縦370mm×横470mm角の基板42表面にSiO2膜(酸化膜)を形成した場合の一例である。
以上、本発明の原子層成長装置について詳細に説明したが、本発明は上記実施形態に限定されず、本発明の主旨を逸脱しない範囲において、種々の改良や変更をしてもよいのはもちろんである。
反応性ガスの供給孔が形成された壁によって囲まれた第1の室と、原料ガスの供給孔が形成された壁によって囲まれた第2の室と、前記第1の室内に設けられた、反応性ガスを用いてプラズマを生成するための、棒状の複数のアンテナ素子が平行に配設されたアンテナアレイと、前記第2の室内に設けられた、前記基板が載置される基板ステージと、前記第1の室から前記第2の室に、前記アンテナアレイにより生成された反応性ガスのラジカルを含むガスを供給するために、前記第1の室と前記第2の室とを接続する接続部材と、を備え、
前記複数のアンテナ素子のそれぞれの延在する方向は、前記反応性ガスの供給孔から前記第1の室に供給される前記反応性ガスの供給ガス流に対して直交し、かつ、前記複数のアンテナ素子によって作られるアンテナ素子の配列面は、前記供給ガス流に平行になるように、前記複数のアンテナ素子は前記第1の室に取り付けられ、さらに、前記複数のアンテナ素子の隣接するアンテナ素子同士は、お互いに対向する位置に給電位置が設けられ、前記給電位置にお互いに反対方向から給電される、原子層成長装置を提供する。
前記第1の室に前記反応性ガスを供給するとき、前記反応性ガスは、前記複数のアンテナ素子のそれぞれの延在する方向に直交し、かつ、前記複数のアンテナ素子によって作られるアンテナ素子の配列面に対して平行な供給ガス流を形成し、
前記複数のアンテナ素子の隣接するアンテナ素子同士は、お互いに対向する位置に給電位置が設けられ、前記給電位置にお互いに反対方向から給電される、原子層成長方法を提供する。
Claims (10)
- 反応性ガスを用いてプラズマを生成することにより、基板上に膜を生成する原子層成長装置であって、
反応性ガスの供給孔が形成された壁によって囲まれた第1の室と、
原料ガスの供給孔が形成された壁によって囲まれた第2の室と、
前記第1の室内に設けられた、反応性ガスを用いてプラズマを生成するための、棒状の複数のアンテナ素子が平行に配設されたアンテナアレイと、
前記第2の室内に設けられた、前記基板が載置される基板ステージと、
前記第1の室から前記第2の室に、前記アンテナアレイにより生成された反応性ガスのラジカルを含むガスを供給するために、前記第1の室と前記第2の室とを接続する接続部材と、を備えている原子層成長装置。 - 予備容器と、成膜容器とを備え、
前記第1の室は予備容器の室であり、前記第2の室は成膜容器の室であり、
前記接続部材は、前記予備容器の壁に形成された、前記ラジカルを含むガスの排気孔と、前記成膜容器の壁に形成された、前記ラジカルを含むガスの供給孔と、を接続する供給管である、請求項1に記載の原子層成長装置。 - 前記予備容器の排気孔は、前記アンテナアレイを介して、前記予備容器の供給孔が形成された側壁に対向する側壁に設けられ、さらに、前記予備容器の排気孔は、前記予備容器の下壁に対して段差がつく位置に形成されている、請求項2に記載の原子層成長装置。
- 前記供給管には、前記予備容器と前記成膜容器との導通を制御する開閉弁が設けられる、請求項2または3に記載の原子層成長装置。
- 前記基板ステージは、前記成膜容器内を昇降可能に移動し、
前記成膜容器の前記第2の室には、前記基板ステージを所定の位置に位置決めするストッパが突出して設けられ、
前記基板ステージの基板を載置する載置面は、前記基板ステージが上昇した位置にあるとき前記ストッパの面と面一になるように位置決めされ、段差のない面が形成される、請求項2〜4のいずれか1項に記載の原子層成長装置。 - 成膜容器を備え、
前記第1および第2の室はいずれも成膜容器の室であり、前記接続部材は、前記アンテナアレイと前記基板ステージとの間に配設された、前記成膜容器の室を、前記第1の室となる予備室と前記第2の室となる成膜室とに分離する壁の役割を果たす仕切り板であり、前記仕切り板には複数の孔が形成されている、請求項1に記載の原子層成長装置。 - 前記仕切り板に形成された複数の孔は、前記予備室の下壁に対して段差がつく位置に形成されていることを特徴とする請求項6に記載の原子層成長装置。
- 前記反応性ガスは、酸化ガスあるいは窒化ガスである、請求項1〜7のいずれか1項に記載の原子層成長装置。
- 反応性ガスを用いてプラズマを生成することにより、基板上に膜を生成する原子層成長方法であって、
第2の室に原料ガスを供給することにより、基板に原料ガスの成分を吸着させるステップと、
第1の室に設けられた棒状の複数のアンテナ素子が平行に配設されたアンテナアレイに給電して、前記第1の室に供給された反応性ガスを用いてプラズマを発生させ、このプラズマにより生成されるラジカルを含むガスを、前記第2の室に供給するステップと、
前記第2の室に供給されたラジカルを含むガスを用いて、基板に吸着された原料ガスを反応させるステップと、を有する原子層成長方法。 - 前記反応性ガスは、酸化ガスあるいは窒化ガスである、請求項9に記載の原子層成長方法。
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