TW202309332A - 沉積薄膜的方法 - Google Patents

沉積薄膜的方法 Download PDF

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TW202309332A
TW202309332A TW111118072A TW111118072A TW202309332A TW 202309332 A TW202309332 A TW 202309332A TW 111118072 A TW111118072 A TW 111118072A TW 111118072 A TW111118072 A TW 111118072A TW 202309332 A TW202309332 A TW 202309332A
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Taiwan
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silicon carbide
gas
substrate
gate insulating
insulating film
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TW111118072A
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金潤晶
李廷均
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南韓商周星工程股份有限公司
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Publication of TW202309332A publication Critical patent/TW202309332A/zh

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Abstract

本揭露係關於一種沉積薄膜的方法，特別是指一種在碳化矽基板上形成閘極絕緣膜的薄膜沉積方法。根據示例性實施例，沉積薄膜的方法包括：準備具有多個半導體區域的碳化矽基板；以及透過原子層沉積製程在介於100°C至400°C之溫度於所述碳化矽基板上形成閘極絕緣膜。

Description

沉積薄膜的方法
本揭露係關於一種沉積薄膜的方法，特別是關於一種在碳化矽基板上形成閘極絕緣膜的薄膜沉積方法。
碳化矽（SiC）是一種相較一般矽來說具有較大的能帶間隙的半導體。碳化矽的崩潰電壓（breakdown voltage）較矽的崩潰電壓大且展現出低損耗及良好的散熱性。具體地，由於碳化矽的絕緣崩潰電場（ insulation breakdown field）約為矽的絕緣崩潰電場的十倍大，因此相較於使用矽的半導體裝置，碳化矽可將壓降（voltage drop）降低至約1/200。因此，碳化矽在顯示裝置領域或功率半導體裝置領域被認為是無可取代的優良半導體材料。
在顯示裝置或功率半導體裝置中，電晶體被作為開關電路使用。電晶體包括用於阻擋電流在源極與汲極之間流通的閘極絕緣膜。
通常，在製造薄膜電晶體時，閘極絕緣膜是在約1200°C的高溫下被沉積。
然而，當閘極絕緣膜是在碳化矽基板於高溫被加熱的狀態中被形成時，基板或形成於基板上的薄膜將被損壞。這可造成顯示裝置或功率半導體裝置的電晶體的缺陷或功能上的劣化。具體地，使用電晶體作為開關電路的顯示裝置或功率半導體裝置的品質或可靠性將顯著地劣化。
相關技術文件
專利文件
KR10-2009-0055368 A（專利文件1）
本揭露提供了一種在碳化矽基板上形成閘極絕緣膜的薄膜沉積方法。
根據一示例性實施例，沉積薄膜的方法包括：準備具有多個半導體區域的碳化矽基板；以及透過原子層沉積製程在介於攝氏100度至400度（100°C至400°C）之溫度於該碳化矽基板上形成一閘極絕緣膜。
本案方法可更包括在閘極絕緣膜的形成前，於碳化矽基板上進行電漿表面處理。
閘極絕緣膜的形成可包括：將來源氣體供應至碳化矽基板上；在碳化矽基板上進行電漿預處理；將反應氣體供應至碳化矽基板上；及在碳化矽基板上進行電漿後處理，以及包括供應來源氣體、進行預處理、供應反應氣體及進行後處理的製程循環可被多次進行。
進行電漿預處理及進行電漿後處理可包括：將氫氣噴射至碳化矽基板上；以及對氫氣放電並在碳化矽基板上產生電漿。
閘極絕緣膜可包括高介電常數介電層。
閘極絕緣膜可更包括被設置在上述高介電常數介電層的頂部或底部的至少之一者的氧化矽層或氮化矽層。
碳化矽基板的準備可準備具有源極區域、井區域及汲極區域的碳化矽基板，以及閘極絕緣膜的形成可在所述井區域上形成閘極絕緣膜。
以下，將參考所附圖式詳細敘述本發明的示例性實施例。然而，本發明可透過不同型態被實施且不應被解釋為侷限於本文所闡述的實施例。這些實施例反而是被提供以讓本發明透徹且完整，並完整將本發明的範圍傳達給本領域具有通常知識者。
需要被理解的是，當一層體、一膜、一區域或一板體被稱為在另一者「上」時，其可以直接在另一者之上，或是兩者之間可以存在一或多個中間層、膜、區域或板體。
此外，為了便於描述，如「上方」或「之上」及「下方」或「之下」等空間相對術語可在本文被使用以描述一元件或特徵與另一元件或特徵在圖式中呈現的關係。需要理解的是，除了裝置在圖中所被描繪的方向以外，空間相對術語還旨在包含使用或運作中的裝置之不同方向。在圖式中，為了清楚起見可誇大表示層體及區域的厚度。在圖式中，相似的符號指涉本案中相似的元件。
圖1是繪示根據示例性實施例的沉積設備的示意圖。
請參照圖1，根據示例性實施例的用於在基板上沉積薄膜（即閘極絕緣膜）的沉積設備包含：腔體10、設置在腔體10中且支撐提供在腔體10內的基板的基板支撐單元20、被設置在腔體10中以面向基板支撐單元20並向基板支撐單元20噴射製程氣體的氣體噴射單元30，以及在腔體10中施加射頻功率以產生電漿的射頻電源供應器50。此外，沉積設備可更包含用於將氣體供應至氣體噴射單元30的氣體供應單元40以及用於控制射頻電源供應器50的控制單元（圖未示）。於此，氣體噴射單元30包括用於供應第一氣體（如來源氣體）的第一氣體供應路徑，以及用於供應第二氣體（如反應氣體）的第二氣體供應路徑，且所述第一氣體供應路徑及第二氣體供應路徑為彼此獨立。
腔體10具有預處理空間並維持其密封。腔體10可包括：包括近似圓形或正方形的平坦部及由平坦部向上延伸的側壁部並具有預處理空間的主體12，以及設置在近似圓形或正方形的主體12上並維持腔體10的密封的遮蓋14。然而，示例性實施例不以腔體10的形狀為限。舉例來說，可將腔體10製造成對應於基板的形狀之各種形狀。
排氣孔（圖未示）可被形成於腔體10的底面的預設區中，且連接至排氣孔的排氣管（圖未示）可被設置在腔體10的外部。此外，排氣管可連接至排氣裝置（圖未示）。如渦輪分子泵（turbo-molecular pump）的真空幫浦可作為排氣裝置使用。因此，腔體10的內部可被排氣裝置真空抽吸至一預設壓氣氛，如小於或等於0.1 mTorr（毫托爾）的預設氣壓。除了腔體10的底面之外，排氣管還可被安裝在基板支撐單元20下方的腔體10的側面上，基板支撐單元20將於之後被描述。此外，多個排氣管及連接至排氣管的多個排氣裝置更可被安裝以降低排氣所需的時間。
此外，裝載在腔體10中而用於薄膜形成製程的基板客可設置在基板支撐單元20上。於此，基板可包括含有碳化矽（SiC）作為主成分的碳化矽基板。此外，基板可包括碳化矽單晶晶圓。隨著摻雜物被噴射至碳化矽單晶晶圓中，可在晶圓中形成多個半導體區域。於此，該些半導體區域可包括源極區域、汲極區域及井區域。於此，基板支撐單元20例如可包括靜電吸盤以藉由使用靜電力吸收並維持基板而使基板被設置及支撐。或者，基板支撐單元30可藉由真空吸力或機械力支撐基板。
基板支撐單元20可具有對應於基板的形狀（如圓形或正方形）之形狀。基板支撐單元20可包括上方設置有基板的基板支撐件24以及設置在基板支撐件24下方以使基板支撐件上升的升降器22。於此，基板支撐件24可被製造為大於基板，且當基板設置在基板支撐件24上時，升降器22可支撐基板支撐件24的至少一區域（如中央區域）並將基板支撐件24移動成與氣體噴射單元30相鄰。此外，加熱器（圖未示）可被安裝在基板支撐件24中。加熱器在預設溫度產生熱並加熱基板支撐件24及設置於基板支撐件24上的基板以讓薄膜被均勻地沉積在基板上。
氣體供應單元40可穿過腔體10的遮蓋14並包括分別用於將第一氣體及第二氣體供應至氣體噴射單元30的第一氣體供應部42及第二氣體供應部44。於此，第一氣體可包括用於形成閘極絕緣膜的來源氣體，且第二氣體可包括反應氣體。然而，第一氣體供應部42及第二氣體供應部44的每一個不一定提供一種氣體。第一氣體供應部42及第二氣體供應部44的每一個可同時供應多種氣體或供應從多種氣體中所選擇的一種氣體。
舉例來說，第一氣體供應部42可供應含有矽（Si）成分的氣體作為來源氣體或供應含有鉿（Hf）、鑭（La）、鋯（Zr）、鉭（Ta）、鈦（Ti）、鋇（Ba）、鍶（Sr）及銥（Ir）中的至少一者的氣體。此外，第二氣體供應部44可供應含有氧（O）或氮（N）的氣體作為反應氣體。
氣體噴射單元30被安裝在腔體10中，例如被安裝在遮蓋14的底面上，且用於將第一氣體噴射及供應至基板上的第一氣體供應路徑與用於將第二氣體噴射及供應至基板上的第二氣體供應路徑形成於氣體噴射單元30中。當第一氣體供應路徑及第二氣體供應路徑是獨立且分開地形成時，第一氣體及第二氣體可獨立地被供應至基板上而非在氣體噴射單元30中混合。
氣體噴射單元30可包括頂框架32及底框架34。於此，頂框架32可分離地耦接至遮蓋14的底面，且同時，遮蓋14的頂面的一部分（如中央部分）與遮蓋14的底面透過一預設距離相分離。據此，從第一氣體供應部42供應的第一氣體可在頂框架32的頂面與遮蓋14的底面之間的空間中擴散。此外，底框架34與頂框架32的底面透過一預設距離相分離。據此，從第二氣體供應部44供應的第二氣體可在底框架34的頂面與頂框架32的底面之間的空間中擴散。頂框架32及底框架34可沿其外周表面連接以在它們之間形成分離空間並彼此整合。或者，頂框架32及底框架34的外周表面可被獨立的密封件密封。
第一氣體供應路徑可被形成以讓從第一氣體供應部42供應的第一氣體在遮蓋14的底面與頂框架32之間的空間中擴散，且透過頂框架32及底框架34被供應至腔體10中。此外，第二氣體供應路徑可被形成以讓從第二氣體供應部44供應的第二氣體可在頂框架32的底面與底框架34的頂面之間的空間中擴散，且透過底框架34被供應至腔體10中。第一氣體供應路徑與第二氣體供應路徑可不彼此連通，且因此第一氣體與第二氣體可獨立地透過氣體噴射單元30從氣體供應單元40被供應至腔體10中。
第一電極38可被安裝在底框架34的底面上，且第二電極36可與底框架34的下側及第一電極38的外側透過預設距離相分離。於此，底框架34及第二電極36可沿其外周表面連接。或者，底框架34及第二電極36的外周表面可被獨立的密封件密封。
如上所述，當第一電極38及第二電極36被安裝時，第一氣體可透過第一電極38被噴射至基板上，且第二氣體可透過第一電極38及第二電極36之間的分離空間被噴射至基板上。
射頻電源供應器50可將射頻功率施加至底框架34及第二電極36的其中一者。在圖1中，係以底框架34接地且射頻功率被施加在第二電極36的結構為例進行說明。當底框架34接地時，安裝在底框架34的底面上的第一電極38同樣會接地。因此，當射頻電源供應器50將射頻功率施加至第二電極36時，第一激發區域（即第一電漿區域）可形成在氣體噴射單元30及基板支撐單元20之間，且第二激發區域（即第二電漿區域）可形成在第一電極38及第二電極36之間。
因此，當透過第一電極38與第二電極36之間的分離空間噴射第二氣體時，第二氣體可在第一電極38與第二電極36之間對應於氣體噴射單元30內部的區域（即從第二電漿區域到第一電漿區域之區域）被激發。因此，在根據示例性實施例的沉積設備中，第二氣體可在氣體噴射單元30中被激發並被噴射至基板上。此外，由於用於供應第一氣體的第一氣體供應路徑及用於供應第二氣體的第二氣體供應路徑以獨立的方式形成，所以來源氣體及反應氣體例如可經由經最佳化的供應路徑被散布及噴射以沉積薄膜。
以下，將參考圖2及圖3詳細描述根據示例性實施例的形成薄膜的方法。在描述根據示例性實施例的形成薄膜的方法時，將省略關於沉積設備的以上已經被描述過的重複內容。
圖2是繪示根據示例性實施例的沉積薄膜的方法的示意流程圖，及圖3是用於解釋根據示例性實施例形成閘極絕緣膜的製程循環的圖式。
請參考圖2及圖3，根據示例性實施例的形成薄膜的方法包括準備具有多個半導體區域的碳化矽基板的製程S100以及透過原子層沉積製程在100°C至400°C之溫度於碳化矽基板上形成一閘極絕緣膜的製程S200。
準備碳化矽基板的製程S100允許含有碳化矽（SiC）作為主成分的碳化矽基板被裝載到腔體10中並被設置在基板支撐單元20上。碳化矽基板可具有多個半導體區域。也就是說，碳化矽基板可包括碳化矽單晶晶圓。隨著摻雜物被噴射至碳化矽單晶晶圓中，可在晶圓中形成多個半導體區域。於此，該些半導體區域可包括源極區域、汲極區域及井區域，且以下將參考圖5描述使用具有源極區域、汲極區域及井區域的碳化矽基板製造的功率半導體裝置。
在準備碳化矽基板的製程S100之後，會進行在碳化矽基板上形成閘極絕緣膜的製程S200。於此，可於準備碳化矽基板的製程S100之後進行形成閘極絕緣膜的製程S200，且可在準備碳化矽基板的製程S100及形成閘極絕緣膜的製程S200之間進行添加用於製造顯示裝置或功率半導體裝置的另一製程。也就是說，雖然已經形成有閘極電極的碳化矽基板可在準備碳化矽基板的製程S100中被準備，但可在準備碳化矽基板的製程S100及形成閘極絕緣膜的製程S200之間進行在碳化矽基板上形成閘極電極的製程。
於此，根據示例性實施例的沉積薄膜的方法可更包括在閘極絕緣膜形成在碳化矽基板上之前，於碳化矽基板上進行電漿表面處理的製程。
在碳化矽基板上進行電漿表面處理的製程可被進行以移除在準備碳化矽基板的製程S100中形成於碳化矽基板上的天然氧化膜。
在於碳化矽基板上進行電漿表面處理的製程中，可透過上述的沉積設備的第一氣體供應路徑及第二氣體供應路徑中的至少一者將表面處理氣體噴射至碳化矽基板上，且射頻電源供應器50可將射頻功率施加至製程空間以激發表面處理氣體並產生電漿。於此，可使用一氧化二氮（N 2O）、一氧化氮（NO）、氮氣（N 2）、氫氣（H 2）、氧氣（O 2）及氬氣（Ar）中的至少一者作為表面處理氣體。如上所述，可透過在閘極絕緣膜形成在碳化矽基板上之前於碳化矽基板上進行電漿表面處理，來移除形成在具有沉積表面以沉積閘極絕緣膜的碳化矽基板的表面上的天然氧化膜。
形成閘極絕緣膜的製程S200透過原子層沉積製程（atomic layer deposition，ALD）在100°C至400°C之溫度形成閘極絕緣膜。
通常，閘極絕緣膜是在約1200°C或更高的高溫透過熱沉積製程被形成在碳化矽基板上。然而，當閘極絕緣膜在碳化矽基板被加熱至高溫的狀態下被形成時，碳化矽基板及先前形成在碳化矽基板上的薄膜可能會損壞。因此，將被製造出的顯示裝置或功率半導體裝置的品質及可靠性可能會顯著地劣化。因此，根據示例性實施例，閘極絕緣膜是透過原子層沉積製程（ALD）在100°C至400°C之溫度於碳化矽基板上被形成。以下，將更詳細地描述形成閘極絕緣膜的製程S200。
可藉由多次進行將來源氣體供應至碳化矽基板上的製程S210及將反應氣體供應至碳化矽基板上的製程S230的製程循環，來進行形成閘極絕緣膜的製程S200。
供應來源氣體的製程S210將來源氣體供應至碳化矽基板上。於此，供應來源氣體的製程S210透過沉積設備的上述的第一氣體供應路徑將來源氣體供應至碳化矽基板上。於此，來源氣體可包含用於形成閘極絕緣膜的各種來源材料的至少一種。舉例來說，當閘極絕緣膜被形成為二氧化矽（SiO 2）層或氮化矽（SiN）層時，來源氣體可為含矽（Si）氣體，且當閘極絕緣膜被形成為高介電常數介電層時，來源氣體可為包含鉿（Hf）、鑭（La）、鋯（Zr）、鉭（Ta）、鈦（Ti）、鋇（Ba）、鍶（Sr）及銥（Ir）中的至少一者的氣體。供應來源氣體的製程S210將來源氣體噴設至碳化矽基板上以吸附到碳化矽基板。於此，可在沒有施加射頻功率之情況下進行供應來源氣體的製程S210。
於此，閘極絕緣膜可包括高介電常數介電層。也就是說，閘極絕緣膜可被形成為高介電常數介電層或可除了高介電常數介電層之外更包括形成在高介電常數介電層的頂部及底部的其中至少一者上的二氧化矽（SiO 2）層或氮化矽（SiN）層。於此，閘極絕緣膜可被形成而使得二氧化矽（SiO 2）層被準備在碳化矽基板上、高介電常數介電層被準備在二氧化矽（SiO 2）層上，且二氧化矽（SiO 2）層又再度被準備在高介電常數介電層上。當閘極絕緣膜具有上述的層壓結構時，形成高介電常數介電層的高介電材料可避免功率半導體裝置的主動層或薄膜電晶體損壞。於此，至少一部分的形成在高介電常數介電層的頂部及底部的二氧化矽（SiO 2）層可被取代為氮化矽（SiN）層。
在供應來源氣體的製程S210之後進行吹除來源氣體的製程。吹除來源氣體的製程可將殘留在腔體10的製程空間中的來源氣體移除。可藉由將如氬氣（Ar）之惰性氣體供應至製程空間來進行吹除來源氣體的製程，且氬氣（Ar）可透過第一氣體供應路徑及第二氣體供應路徑中的至少一者被供應。於此，射頻電源供應器50在來源氣體被吹除的同時可不施加射頻功率。
在吹除來源氣體的製程之後，可進行在碳化矽基板上進行電漿預處理的製程S220。在碳化矽基板上進行電漿前處理的製程S220可透過將具有氫例如氫氣(H 2)的前處理氣體供應至基板上並施加射頻功率來在碳化矽基板上產生氫電漿。於此，可透過第一氣體供應路徑及第二氣體供應路徑中的至少一者供應氫氣（H2）。當在原始材料被吸附至碳化矽基板之後進行激發並供應含有氫氣的預處理氣體的製程S220時，可透過氫電漿移除包含在被吸附到碳化矽基板的原始材料的雜質，且原始材料可被更牢固地吸附至碳化矽基板。
在於碳化矽基板上進行電漿預處理的製程S220之後，會進行供應反應氣體的製程S230。供應反應氣體的製程S230例如將含氧的反應氣體供應至碳化矽基板上。於此，供應反應氣體的製程S230將含氧的反應氣體透過沉積設備的上述的第二氣體供應路徑供應至基板上。當反應氣體被供應至吸附有原始材料的基板上時，原始材料會與反應氣體中的反應物發生反應。
於此，在供應反應氣體的製程S230中，射頻電源供應器50可將射頻功率施加至製程空間以激發反應氣體並產生電漿，使得包含在反應氣體中的氧氣成分有效地與來源材料發生反應。如上所述，被供應為反應氣體的含氧氣體在供應反應氣體的製程S230中被激發及供應，且可被激發為氧自由基以跟來源材料發生反應，且閘極絕緣膜可在更低的製程溫度形成於基板上。也就是說，當反應氣體被激發並被供應至基板上時，可透過將腔體10的製程空間的溫度控制在100°C至400°C而進行形成閘極絕緣膜的製程S200。
在供應反應氣體的製程S230之後，可進行吹除反應氣體的製程。吹除反應氣體的製程可將殘留在腔體10的製程空間中的反應氣體移除。吹除反應氣體的製程一般可藉由將惰性氣體如氬氣（Ar）供應至與進行吹除來源氣體的製程的製程空間相同的製程空間進行，且氬氣（Ar）可透過第一氣體供應路徑及第二氣體供應路徑的至少之一者被供應。
在清除反應氣體的製程之後，可進行在碳化矽基板上進行電漿後處理的製程240。在碳化矽基板上進行電漿後處理的製程240可透過將如氫氣（H2）之含氫後處理氣體供應至碳化矽基板上並施加射頻功率而在碳化矽基板上產生氫電漿。於此，可透過第一氣體供應路徑及第二氣體供應路徑中的至少一者供應氫氣（H2）。
在閘極絕緣膜因來源氣體及反應氣體被噴射而形成在碳化矽基板上之後，當氫電漿產生於基板上時，儘管在腔體的內部或碳化矽基板具有低的溫度之時候，仍可輕易地形成閘極絕緣膜，特別是形成由高介電常數介電層形成的閘極絕緣膜。也就是說，當腔體的內部或碳化矽基板具有低的溫度時，由高介電常數介電層形成的閘極絕緣膜可在100°C至400°C的低溫被形成。此外，可透過將含氫後處理氣體激發並供應至碳化矽基板上的製程240，有效地移除殘留在腔體10中的雜質或包含在閘極絕緣膜中的雜質。
如上所述，供應來源氣體的製程S210、在碳化矽基板上進行電漿預處理的製程S220、供應反應氣體的製程S230以及在碳化矽基板上進行電漿後處理的製程S240的製程循環可進行多次。更具體地，供應來源氣體的製程S210、在碳化矽基板上進行電漿預處理的製程S220、供應反應氣體的製程S230以及在碳化矽基板上進行電漿後處理的製程S240可形成一製程循環，且此製程循環可重複進行直到具有期望厚度的閘極絕緣膜形成於基板上。
圖4是根據示例性實施例製造的薄膜電晶體的一例子所繪示的圖。
請參照圖4，根據示例性實施例的薄膜電晶體包括閘極電極200a、設置在閘極電極200a的上方或下方且沿水平方向彼此分離的源極電極510a與汲極電極520a、設置在閘極電極200a、源極電極510a及汲極電極520a之間的主動層400a，以及設置在閘極電極200a及主動層400a之間的閘極絕緣膜300a。
於此，如圖4所示，根據示例性實施例的薄膜電晶體可為包括形成在碳化矽基板100a上的閘極電極200a、形成在閘極電極200a上的閘極絕緣膜300a、形成在閘極絕緣膜300a上的主動層400a，以及在主動層400a上彼此分離的源極電極510a與汲極電極520a的底閘極型（bottom gate type）薄膜電晶體 。或者，薄膜電晶體可為閘極電極200a被設置在其頂部的頂閘極型（top gate type）薄膜電晶體。
於此，碳化矽基板100a可包括包含碳化矽（SiC）作為主成分的碳化矽基板。於此，基板可包括碳化矽單晶晶圓。
閘極絕緣膜300a可被形成於閘極電極200a上。也就是說，閘極絕緣膜300a可形成於碳化矽基板100a上及閘極電極200a的頂部及側部上。可使用具有良好絕緣電阻以及對金屬材料具有良好附著性的二氧化矽（SiO2）將閘極絕緣膜300a形成為薄膜。或者，閘極絕緣膜300a可被形成為具有大於二氧化矽（SiO2）的介電常數的介電常數的高介電常數材料。也就是說，閘極絕緣膜300a可包括至少一高介電常數介電層。於此，高介電常數材料可包括二氧化鉿（HfO2）、矽酸鉿（HfSiO4）、二氧化鑭（LaO2）、鋁酸鑭（LaAlO3）、二氧化鋯（ZrO2）、矽酸鋯（ZrSiO4）、五氧化二鉭（Ta2O5）、二氧化鈦（TiO2）、鋇鍶鈦氧化物（BaSrTiO3）、鈦酸鋇（BaTiO3）、鈦酸鍶（SrTiO3）以及二氧化銥（IrO2）中的至少一者。
透過包括準備碳化矽基板的製程S100以及透過原子層沉積製程在100°C至400°C之溫度於碳化矽基板上形成閘極絕緣膜的製程S200之根據示例性實施例的沉積薄膜的方法，可形成閘極絕緣膜300a。也就是說，可透過沉積薄膜的方法形成閘極絕緣膜300a，此方法多次進行供應來源氣體的製程S210、在碳化矽基板上進行電漿預處理的製程S220、供應反應氣體的製程S230，以及在碳化矽基板上進行電漿後處理的製程S240的製程循環。
主動層400a形成於閘極絕緣膜300a上，且至少一部分的主動層400a與閘極電極200a重疊。主動層400a例如可被形成為由單一金屬氧化物薄膜或多個金屬氧化物薄膜組成的金屬氧化物薄膜。金屬氧化物薄膜可包括氧化鋅（ZnO）或將銦及鎵中的至少一者摻雜在氧化鋅（ZnO）中的材料。
源極電極510a與汲極電極520a可被形成於主動層400a上。源極電極510a與汲極電極520a可彼此分離，且閘極電極200a位於源極電極510a與汲極電極520a之間，同時源極電極510a與汲極電極520a與閘極電極200a部分重疊。源極電極510a與汲極電極520a可透過相同製程由相同材料製成。舉例來說，源極電極510a與汲極電極520a可由鋁（Al）、釹（Nd）、銀（Ag）、鉻（Cr）、鈦（Ti）、鉭（Ta）及鉬（Mo），或上述元素的合金中的至少一種金屬製成。也就是說，源極電極510a與汲極電極510b可由與閘極電極200a的材料相同或不同的材料製成。此外，源極電極510a與汲極電極520a的每一者可由單層結構或由多個金屬層組成的多層結構形成。
圖5是根據示例性實施例製造的功率半導體裝置的一例子所繪示的圖。
請參考圖5，根據示例性實施例製造的如場效電晶體（FET）之功率半導體裝置包括碳化矽基板100b、形成在碳化矽基板100b上的閘極絕緣膜300b、在碳化矽基板100b上沿著水平方向彼此分離且其間有閘極絕緣膜300b的源極電極510b與汲極電極520b，以及位於源極電極510b與汲極電極520b之間被設置在閘極絕緣膜300b上的閘極電極200b。於此，碳化矽基板100b可包括隨著摻雜劑的噴射而形成有多個半導體區域的基板。多個半導體區域可包括作為場效電晶體的源極的源極區域110b、作為場效電晶體的汲極的汲極區域120b，以及作為場效電晶體的主動層的井區域130b。
於此，可藉由包括準備碳化矽基板100b的製程S100以及透過原子層沉積製程在100°C至400°C之溫度於碳化矽基板100b上形成閘極絕緣膜的製程S200的根據示例性實施例的沉積薄膜的方法，來製造功率半導體裝置以在碳化矽基板100b上形成閘極絕緣膜200b。
也就是說，在功率半導體裝置中，可藉由沉積薄膜的方法形成閘極絕緣膜300b，此沉積薄膜的方法多次進行供應來源氣體的製程S210、在碳化矽基板上進行電漿預處理的製程S220、供應反應氣體的製程S230，以及在碳化矽基板上進行電漿後處理的製程S240的製程循環。
於此，閘極絕緣膜300b可包括至少一高介電常數介電層，且高介電常數材料可包括與上述薄膜電晶體的材料相同的二氧化鉿（HfO2）、矽酸鉿（HfSiO4）、二氧化鑭（LaO2）、鋁酸鑭（LaAlO3）、二氧化鋯（ZrO2）、矽酸鋯（ZrSiO4）、五氧化二鉭（Ta2O5）、二氧化鈦（TiO2）、鋇鍶鈦氧化物（BaSrTiO3）、鈦酸鋇（BaTiO3）、鈦酸鍶（SrTiO3）以及二氧化銥（IrO2）中的至少一者。因此，重複的敘述將被省略。
根據示例性實施例，閘極絕緣膜可透過低溫製程形成於碳化矽基板上。此外，可節省用於增加基板的溫度以形成閘極絕緣膜的時間，且因此可降低用於製造顯示裝置或功率半導體裝置的時間。
此外，根據示例性實施例，可製造出具有高崩潰電壓及良好散熱性的顯示裝置或功率半導體裝置。
雖然對特定實施例使用了特定術語進行了描述和說明，但這些術語僅是為了清楚說明這些實施例而舉的例子，因此，對於具本領域通常知識者來說顯而易見的是，在不改變技術思想或基本特徵的情況下，這些實施例和技術術語可以用其他特定形式實施與進行變化。因此，應當理解的是，根據本發明實施例的簡單修改可屬於本發明的技術精神。
10:腔體 100a、100b:碳化矽基板 110b:源極區域 12:主體 120b:汲極區域 130b:井區域 14:遮蓋 20:基板支撐單元 200a、200b:閘極電極 22:升降器 30:氣體噴射單元 300a、300b:閘極絕緣膜 32:頂框架 34:底框架 36:第二電極 38:第一電極 40:氣體供應單元 400a:主動層 42:第一氣體供應部 44:第二氣體供應部 50:射頻電源供應器 510a、510b:源極電極 520a、520b:汲極電極 S100~S240:製程
示例性實施例可以透過以下敘述結合所附圖式被更詳細地理解，於圖式中：
圖1是繪示根據示例性實施例的沉積設備的示意圖。
圖2是繪示根據示例性實施例的沉積薄膜的方法的示意流程圖。
圖3是用於解釋根據示例性實施例形成閘極絕緣膜的製程循環的圖式。
圖4是繪示根據示例性實施例製造的薄膜電晶體的一例子的圖式。
圖5是繪示根據示例性實施例製造的功率半導體裝置的一例子的圖式。
S100~S240:製程

Claims (7)

  1. 一種沉積薄膜的方法，包含：準備具有多個半導體區域的一碳化矽基板；以及透過一原子層沉積製程在攝氏100度至400度（100°C至400°C）之一溫度於該碳化矽基板上形成一閘極絕緣膜。
  2. 如請求項1所述的沉積薄膜的方法，更包含在形成該閘極絕緣膜之前，於該碳化矽基板上進行一電漿表面處理。
  3. 如請求項1所述的沉積薄膜的方法，其中形成該閘極絕緣膜包含：將一來源氣體供應至該碳化矽基板上；在該碳化矽基板上進行一電漿預處理；將一反應氣體供應至該碳化矽基板上；以及在該碳化矽基板上進行一電漿後處理，其中包含供應該來源氣體、進行該電漿預處理、供應該反應氣體及進行該電漿後處理的一製程循環被多次進行。
  4. 如請求項3所述的沉積薄膜的方法，其中進行該電漿預處理及進行該電漿後處理包含：將一氫氣噴射至該碳化矽基板上；以及對該氫氣進行放電並在該碳化矽基板上產生電漿。
  5. 如請求項1所述的沉積薄膜的方法，其中該閘極絕緣膜包含一高介電常數介電層。
  6. 如請求項5所述的沉積薄膜的方法，其中該閘極絕緣膜更包含被設置在該高介電常數介電層的一頂部或一底部中的至少一者的一氧化矽層或一氮化矽層。
  7. 如請求項1所述的沉積薄膜的方法，其中準備該碳化矽基板是準備具有一源極區域、一井區域及一汲極區域的該碳化矽基板，並且形成該閘極絕緣膜是在該井區域上形成該閘極絕緣膜。
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