WO2010079740A1 - Appareil de traitement au plasma - Google Patents

Appareil de traitement au plasma Download PDF

Info

Publication number
WO2010079740A1
WO2010079740A1 PCT/JP2010/000028 JP2010000028W WO2010079740A1 WO 2010079740 A1 WO2010079740 A1 WO 2010079740A1 JP 2010000028 W JP2010000028 W JP 2010000028W WO 2010079740 A1 WO2010079740 A1 WO 2010079740A1
Authority
WO
WIPO (PCT)
Prior art keywords
base member
wall surface
substrate
vacuum chamber
chamber
Prior art date
Application number
PCT/JP2010/000028
Other languages
English (en)
Japanese (ja)
Inventor
若松貞次
亀崎厚治
菊池正志
神保洋介
江藤謙次
浅利伸
内田寛人
Original Assignee
株式会社アルバック
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to KR1020117016415A priority Critical patent/KR101303968B1/ko
Priority to JP2010545742A priority patent/JPWO2010079740A1/ja
Priority to CN2010800039891A priority patent/CN102272893A/zh
Priority to DE112010000818T priority patent/DE112010000818T8/de
Publication of WO2010079740A1 publication Critical patent/WO2010079740A1/fr

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a plasma processing apparatus.
  • This application claims priority based on Japanese Patent Application No. 2009-004027 filed on Jan. 9, 2009, the contents of which are incorporated herein by reference.
  • a plasma CVD apparatus that decomposes a source gas using plasma and forms a thin film on a substrate is known (see, for example, Patent Document 1).
  • a solar cell particularly a solar cell using microcrystal silicon ( ⁇ c-Si)
  • ⁇ c-Si microcrystal silicon
  • a high-pressure depletion method is effective in a state where the distance between the shower plate surface for ejecting deposition gas to the substrate surface and the substrate surface is narrow (narrow gap).
  • a plasma CVD apparatus is indispensable for manufacturing LCDs or solar cells. As the size of the substrate increases, the size of the device also increases.
  • the high-frequency power supplied to the apparatus also increases, and further, high-rate film formation by narrow gap discharge is necessary, so that it is necessary to pass a large current through the apparatus.
  • a substrate 110 is placed on a base member 103, and a film formation surface (surface) of the substrate 110 and a surface of the shower plate 105 are opposed to each other. In this state, a film is formed on the substrate 110.
  • a ground plate 130 is provided between the base member 103 and the chamber 102, and a film is formed on the substrate 110 with the chamber 102 grounded. ing.
  • the side surface 132 of the base member 103 and the inner wall surface 134 of the chamber 102 face each other at a short distance, and both the base member 103 and the chamber 102 are formed of a conductive member. .
  • the high-frequency current I ′ flows in the direction of the arrow in FIG. 4 and an abnormality occurs between the side surface 132 of the base member 103 and the inner wall surface 134 of the chamber 102.
  • the present invention has been made in view of the above-described circumstances, and suppresses the occurrence of abnormal discharge even when a large current flows through the apparatus when supplying high-frequency high power to the apparatus.
  • a plasma processing apparatus capable of
  • a plasma processing apparatus includes an electrode flange, a chamber having an inner wall surface, an insulating flange disposed between the electrode flange and the chamber, and a side surface.
  • a base member that is disposed in the chamber and on which the substrate is placed, an RF power source that is connected to the electrode flange and applies a high-frequency voltage, the side surface of the base member that faces the inner wall surface, and And an insulating member disposed on at least one of the inner wall surfaces facing the side surface of the base member.
  • the conductive member is not disposed so as to face the exposed surface. Therefore, it is possible to suppress the occurrence of abnormal discharge between the side surface of the base member and the inner wall surface of the chamber. As a result, the upper limit value of the high frequency power that can be supplied to the apparatus can be increased.
  • the side surface of the base member facing the inner wall surface is electrically connected to the inner wall surface facing the side surface of the base member.
  • the insulating member is provided.
  • the insulating member is provided at a position where the distance between the side surface of the base member and the inner wall surface of the chamber is the shortest distance, abnormal discharge is caused between the side surface of the base member and the inner wall surface of the chamber. It can suppress more reliably that it arises. As a result, the upper limit value of the high frequency power that can be supplied to the apparatus can be increased.
  • the chamber is preferably grounded.
  • the conductive member is not disposed so as to face the exposed surface. Therefore, it is possible to suppress the occurrence of abnormal discharge between the side surface of the base member and the inner wall surface of the chamber. As a result, the upper limit value of the high frequency power that can be supplied to the apparatus can be increased.
  • FIG. 1 is a schematic cross-sectional view showing a configuration of a film forming apparatus in the present embodiment.
  • a film forming apparatus 1 that performs a plasma CVD method includes a vacuum chamber 2 (chamber). An opening is formed in the bottom 11 of the vacuum chamber 2. A support column 25 is inserted into the opening, and the support column 25 is disposed in the lower portion of the vacuum chamber 2. A plate-like base member 3 with a built-in heater 16 is connected to the tip of the column 25 (in the vacuum chamber 2). An electrode flange 4 is attached to the upper portion of the vacuum chamber 2 via an insulating flange 31. Further, an exhaust pipe 27 is connected to the vacuum chamber 2. A vacuum pump 28 is provided at the tip of the exhaust pipe 27. The vacuum pump 28 reduces the pressure so that the inside of the vacuum chamber 2 is in a vacuum state. Further, an outer frame 12 including an insulating flange 31 and an electrode flange 4 is provided above the vacuum chamber 2.
  • the support column 25 is connected to an elevating mechanism (not shown) provided outside the vacuum chamber 2 and can move up and down in the vertical direction of the substrate 10.
  • the base member 3 connected to the tip of the support column 25 is configured to be able to move up and down.
  • a bellows 26 is provided outside the vacuum chamber 2 so as to cover the outer periphery of the support column 25.
  • the electrode flange 4 is provided on the insulating flange 31 and is arranged so that the opening of the electrode flange 4 is located below in the vertical direction of the substrate 10.
  • a shower plate 5 is attached to the opening of the electrode flange 4, that is, at a position where the electrode flange 4 faces the film formation space.
  • a space 24 is formed between the shower plate 5 and the electrode flange 4.
  • a gas introduction pipe 7 is connected to the electrode flange 4. Outside the film forming apparatus 1, the gas introduction pipe 7 is connected to the film forming gas supply unit 21.
  • a source gas for example, SiH 4
  • the shower plate 5 is provided with a large number of gas ejection ports 6. The film forming gas introduced into the space 24 is ejected from the gas ejection port 6 into the vacuum chamber 2.
  • the electrode flange 4 and the shower plate 5 are made of a conductive material.
  • the electrode flange 4 is connected to an RF power source (high frequency power source) 9 provided outside the vacuum chamber 2.
  • a gas introduction pipe 8 different from the gas introduction pipe 7 is connected to the vacuum chamber 2.
  • the gas introduction pipe 8 is provided with a fluorine gas supply unit 22 and a radical source 23.
  • the radical source 23 decomposes the fluorine gas supplied from the fluorine gas supply unit 22.
  • the gas introduction pipe 8 supplies fluorine radicals obtained by decomposing fluorine gas to the film forming space in the vacuum chamber 2.
  • the base member 3 is a substantially plate-like member having a flat surface.
  • a substrate 10 is placed on the upper surface of the base member 3.
  • the base member 3 functions as a ground electrode and is made of, for example, an aluminum alloy.
  • materials other than said material may be employ
  • the distance between the substrate 10 and the shower plate 5 can be set to 3 mm to 10 mm, that is, a narrow gap can be realized.
  • a heater 16 is provided inside the base member 3.
  • the temperature of the base member 3 is adjusted to a predetermined temperature by the heater 16.
  • the power supply line 18 of the heater 16 protrudes from a substantially central portion of the base member 3 as viewed from the vertical direction of the base member 3 and the bottom surface 17 of the base member 3, is inserted into the support column 25, and is external to the vacuum chamber 2. Led to.
  • the power line 18 of the heater 16 is connected to a power source (not shown) outside the vacuum chamber 2 to adjust the temperature of the base member 3.
  • ground plates 30 that connect between the base member 3 and the vacuum chamber 2 are arranged at substantially equal intervals along the circumferential direction of the base member 3.
  • the earth plate 30 is made of a flexible metal plate, and is made of, for example, a nickel-based alloy or an aluminum alloy.
  • the material of the earth plate 30 other materials may be adopted as long as they are made of a conductive material having a width of about 10 to 200 mm, have high corrosion resistance, and have flexibility.
  • FIG. 2 is a schematic cross-sectional view showing the configuration of the plasma CVD apparatus in the embodiment of the present invention, and is an enlarged cross-sectional view showing a portion indicated by reference numeral A in FIG.
  • a locking portion 33 that locks the ground plate 30 is formed on the side surface (peripheral edge) 32 of the base member 3.
  • the locking portion 33 is formed so as to protrude from the side surface 32 in the horizontal direction (the direction horizontal to the substrate 10).
  • the first end 30a of the ground plate 30 is locked and is electrically joined by a bolt (not shown) or the like.
  • the second end 30b of the ground plate 30 is electrically joined to the inner wall surface 34 of the vacuum chamber 2 by a bolt (not shown) or the like. That is, the base member 3 and the vacuum chamber 2 are electrically connected by the ground plate 30.
  • the plurality of ground plates 30 are arranged at substantially equal intervals along the periphery of the base member 3.
  • the second end 30 b of the earth plate 30 is connected to the inner wall surface 34 of the vacuum chamber 2.
  • the ground plate 30 extends downward from the connecting portion between the second end 30 b and the inner wall surface 34 along the inner wall surface 34.
  • the earth plate 30 is folded back into a substantially U shape without extending to the bottom 11 of the vacuum chamber 2 and extends upward. That is, the ground plate 30 has a bent portion located between the first end 30a and the second end 30b.
  • the ground plate 30 extending upward from the bent portion is folded back at a locking portion 33 formed on the side surface 32 of the base member 3.
  • a first end 30 a of the ground plate 30 is connected to the base member 3.
  • the insulating member 41 is disposed on the side surface 32 of the base member 3 so as to cover the side surface 32 and the first end 30a of the earth plate 30.
  • An insulating member 42 is disposed on the inner wall surface 34 of the vacuum chamber 2 so as to cover the inner wall surface 34 and the second end 30 b of the earth plate 30. Note that the insulating member 41 and the insulating member 42 face each other.
  • the vacuum chamber 2 is depressurized using the vacuum pump 28.
  • the substrate 10 is carried into the vacuum chamber 2 and placed on the base member 3.
  • the base member 3 is positioned below the vacuum chamber 2. That is, before the substrate 10 is carried in, the distance between the base member 3 and the shower plate 5 is wide, so that the substrate 10 can be easily placed on the base member 3 using a robot arm (not shown). can do.
  • an elevating device (not shown) is activated, the support column 25 is pushed upward, and the substrate 10 placed on the base member 3 also moves upward. To do.
  • the interval between the shower plate 5 and the substrate 10 is determined as desired so that the interval necessary for proper film formation is achieved, and this interval is maintained.
  • the distance between the shower plate 5 and the substrate 10 is maintained at a distance suitable for forming a film on the substrate 10.
  • the distance between the substrate 10 and the shower plate 5 is set to a narrow gap of 3 to 10 mm.
  • a film forming gas raw material gas
  • the film forming gas is supplied into the vacuum chamber 2 through the gas outlet 6.
  • the electrode flange 4 is electrically insulated from the vacuum chamber 2 through an insulating flange 31. With the vacuum chamber 2 connected to the ground potential, the RF power source 9 is activated, and a high frequency voltage is applied to the electrode flange 4. As a result, a high frequency voltage is supplied between the shower plate 5 and the base member 3 to generate a discharge, and plasma is generated between the electrode flange 4 and the substrate 10. The film forming gas is decomposed in the plasma generated in this way, a plasma process gas is obtained, a vapor phase growth reaction occurs on the surface of the substrate 10, and a thin film is formed on the substrate 10.
  • a high frequency current I flows in the apparatus.
  • the high-frequency current I flows from the RF power source 9 to the surface of the electrode flange 4 and then flows to the surface of the shower plate 5.
  • plasma is generated in the film formation space, and the high-frequency current I flows from the shower plate 5 to the base member 3 (substrate 10).
  • the high-frequency current I that has reached the base member 3 flows on the surface of the base member 3 and flows in the ground plate 30.
  • the high-frequency current I flowing from the first end 30 a to the second end 30 b of the ground plate 30 flows on the surface of the outer frame 12 after flowing on the surface of the vacuum chamber 2.
  • the film forming material adheres to the inner side surface 34 and the like of the vacuum chamber 2, so that the inside of the vacuum chamber 2 is periodically cleaned.
  • the fluorine gas supplied from the fluorine gas supply unit 22 is decomposed by the radical source 23 to generate fluorine radicals.
  • the fluorine radicals pass through the gas introduction pipe 8 connected to the vacuum chamber 2 and pass through the vacuum chamber 2. To be supplied.
  • a chemical reaction occurs, and the attachment attached to the members disposed around the vacuum chamber 2 or the inner side surface 34 of the vacuum chamber 2. The kimono is removed.
  • the conductive members are not arranged to face each other while being exposed. Therefore, when supplying high frequency high power to the apparatus, even if a large current flows through the apparatus, abnormal discharge occurs between the side surface 32 of the base member 3 and the inner wall surface 34 of the vacuum chamber 2. Can be suppressed. As a result, the upper limit value of the high frequency power that can be supplied to the film forming apparatus 1 can be increased.
  • the power frequency applied to the film forming apparatus 1 from the RF power source 9 was set to 27.12 MHz.
  • the size of the shower plate 5 (size viewed from the vertical direction of the substrate 10) is set to 1300 mm ⁇ 1600 mm, and the size of the base member 3 (size viewed from the vertical direction of the substrate 10) is set to 1400 mm ⁇ 1700 mm.
  • the size of the substrate 10 was set to 1100 mm ⁇ 1400 mm.
  • the ratio of the flow rate of SiH 4 that is the deposition gas and the flow rate of H 2 was set to 1:25, and ⁇ c-Si was deposited on the substrate 10.
  • the distance (ES) between the shower plate 5 and the substrate 10 was changed every 4 mm between 4 mm and 10 mm. Further, the maximum power that can be supplied to the film forming apparatus 1 when the pressure in the film forming space was set to 700 Pa, 1300 Pa, and 2000 Pa was measured.
  • Table 1 shows the measurement results. “Unmeasured” indicates a result when the insulating members 41 and 42 are not arranged as in the conventional film forming apparatus. “Countermeasured” indicates the result when the insulating members 41 and 42 are arranged as in the film forming apparatus 1 of the present embodiment. Even when the distance between the shower plate 5 and the substrate 10 is changed and when the pressure in the film formation space is changed, the measurement result of “measured” is higher than the measurement result of “unmeasured”. I understand that. That is, the maximum power value that can be supplied to the “measured” film forming apparatus 1 can be increased.
  • the insulating members 41 and 42 on the side surface 32 of the base member 3 and the inner wall surface 34 of the vacuum chamber 2 as in the present embodiment a large current is supplied to the device when supplying high-frequency high power to the device. Even if it flows, it is possible to suppress the occurrence of abnormal discharge between the side surface 32 of the base member 3 and the inner wall surface 34 of the vacuum chamber 2. Therefore, the maximum power value that can be supplied to the film forming apparatus 1 can be increased. As a result, when the ⁇ c-Si film is formed with a narrow gap between the substrate 10 and the shower plate 5, the film formation rate can be increased, and high-quality ⁇ c-Si film can be formed.
  • the configuration in which the insulating member is disposed on both the side surface of the base member and the inner wall surface of the vacuum chamber has been described, but it is only necessary that the insulating member is disposed on at least one of them.
  • the configuration in which the insulating member is disposed on the side surface of the base member and the inner wall surface of the vacuum chamber has been described.
  • the surface of the earth plate may be covered with the insulating member.
  • the present invention is useful for a plasma processing apparatus capable of suppressing the occurrence of abnormal discharge even when a large current flows through the apparatus when supplying high-frequency high power to the apparatus. is there.
  • SYMBOLS 1 Film-forming apparatus (plasma processing apparatus) 2 ... Vacuum chamber (chamber) 3 ... Base member 4 ... Electrode flange 10 ... Substrate 31 ... Insulating flange 32 ... Side surface of base member 34 ... Inner wall surface of vacuum chamber 41 ... Insulating member 42 ... insulating members.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention a trait à un appareil de traitement au plasma qui comprend : une bride d'électrode (4) ; une chambre (2) dotée d'une surface de paroi intérieure (34) ; une bride isolante (31) disposée entre la bride d'électrode (4) et la chambre (2) ; un élément de base (3) qui est pourvu d'une surface latérale (32) et qui est disposé à l'intérieur de la chambre (2), et sur lequel un substrat (10) est placé ; un bloc d'alimentation RF (9) qui est connecté à la bride d'électrode (4) et qui applique une tension à haute fréquence à celle-ci ; et des éléments isolants (41, 42) qui sont disposés au moins sur la surface latérale (32) de l'élément de base (3), qui fait face à la surface de paroi intérieure (34), ou sur la surface de paroi intérieure (34), qui fait face à la surface latérale (32) de l'élément de base (3).
PCT/JP2010/000028 2009-01-09 2010-01-05 Appareil de traitement au plasma WO2010079740A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020117016415A KR101303968B1 (ko) 2009-01-09 2010-01-05 플라즈마 처리 장치
JP2010545742A JPWO2010079740A1 (ja) 2009-01-09 2010-01-05 プラズマ処理装置
CN2010800039891A CN102272893A (zh) 2009-01-09 2010-01-05 等离子体处理装置
DE112010000818T DE112010000818T8 (de) 2009-01-09 2010-01-05 Plasmaverarbeitungsvorrichtung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009004027 2009-01-09
JP2009-004027 2009-01-09

Publications (1)

Publication Number Publication Date
WO2010079740A1 true WO2010079740A1 (fr) 2010-07-15

Family

ID=42316506

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2010/000028 WO2010079740A1 (fr) 2009-01-09 2010-01-05 Appareil de traitement au plasma

Country Status (6)

Country Link
JP (1) JPWO2010079740A1 (fr)
KR (1) KR101303968B1 (fr)
CN (1) CN102272893A (fr)
DE (1) DE112010000818T8 (fr)
TW (1) TW201034526A (fr)
WO (1) WO2010079740A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6863199B2 (ja) * 2017-09-25 2021-04-21 トヨタ自動車株式会社 プラズマ処理装置
WO2019142812A1 (fr) * 2018-01-19 2019-07-25 株式会社アルバック Base de dispositif de chauffage et dispositif de traitement

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1079350A (ja) * 1996-09-04 1998-03-24 Kokusai Electric Co Ltd プラズマ処理装置
JP2002270598A (ja) * 2001-03-13 2002-09-20 Tokyo Electron Ltd プラズマ処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3598717B2 (ja) * 1997-03-19 2004-12-08 株式会社日立製作所 プラズマ処理装置
JP4593381B2 (ja) * 2005-06-20 2010-12-08 東京エレクトロン株式会社 上部電極、プラズマ処理装置およびプラズマ処理方法
JP5022077B2 (ja) * 2007-03-27 2012-09-12 株式会社アルバック 成膜装置
JP4712004B2 (ja) 2007-06-21 2011-06-29 パナソニック株式会社 微小径光作製装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1079350A (ja) * 1996-09-04 1998-03-24 Kokusai Electric Co Ltd プラズマ処理装置
JP2002270598A (ja) * 2001-03-13 2002-09-20 Tokyo Electron Ltd プラズマ処理装置

Also Published As

Publication number Publication date
TW201034526A (en) 2010-09-16
KR101303968B1 (ko) 2013-09-05
DE112010000818T5 (de) 2012-05-31
CN102272893A (zh) 2011-12-07
DE112010000818T8 (de) 2012-08-09
JPWO2010079740A1 (ja) 2012-06-21
KR20110089457A (ko) 2011-08-08

Similar Documents

Publication Publication Date Title
CN100524641C (zh) 等离子体处理装置
WO2010079756A1 (fr) Appareil de traitement par plasma
JP5443127B2 (ja) プラズマ処理装置
US10519549B2 (en) Apparatus for plasma atomic layer deposition
JP5328814B2 (ja) プラズマ処理装置及びプラズマｃｖｄ成膜方法
JP5378416B2 (ja) プラズマ処理装置
JP2010161316A (ja) プラズマ処理装置
JP5022077B2 (ja) 成膜装置
KR20180014656A (ko) 기판 처리 장치 및 기판 처리 방법
WO2010079740A1 (fr) Appareil de traitement au plasma
JP5394403B2 (ja) プラズマ処理装置
JP4933979B2 (ja) 成膜装置のクリーニング方法
TW202028520A (zh) 電漿處理腔室、用於其之蓋組件、及用於其之背板設備
JP4870608B2 (ja) 成膜装置
JP5038769B2 (ja) プラズマ処理装置
JP6662998B2 (ja) プラズマ処理装置
CN116568862A (zh) 陈化处理腔室的方法
KR102298836B1 (ko) 플라즈마 화학기상 증착장비용 상부전극
JP3581813B2 (ja) 薄膜製造方法並びに薄膜太陽電池の製造方法
JP5302835B2 (ja) プラズマ処理装置
JP2008244389A (ja) 真空処理装置、真空処理方法及びプラズマｃｖｄ方法
JP2015029004A (ja) プラズマｃｖｄ装置及び成膜方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201080003989.1

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10729160

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2010545742

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 112010000818

Country of ref document: DE

Ref document number: 1120100008183

Country of ref document: DE

ENP Entry into the national phase

Ref document number: 20117016415

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 10729160

Country of ref document: EP

Kind code of ref document: A1