JPWO2010079740A1 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- JPWO2010079740A1 JPWO2010079740A1 JP2010545742A JP2010545742A JPWO2010079740A1 JP WO2010079740 A1 JPWO2010079740 A1 JP WO2010079740A1 JP 2010545742 A JP2010545742 A JP 2010545742A JP 2010545742 A JP2010545742 A JP 2010545742A JP WO2010079740 A1 JPWO2010079740 A1 JP WO2010079740A1
- Authority
- JP
- Japan
- Prior art keywords
- base member
- wall surface
- substrate
- vacuum chamber
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000010408 film Substances 0.000 description 41
- 208000028659 discharge Diseases 0.000 description 12
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 12
- 229910052731 fluorine Inorganic materials 0.000 description 10
- 239000011737 fluorine Substances 0.000 description 10
- 230000002159 abnormal effect Effects 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009004027 | 2009-01-09 | ||
JP2009004027 | 2009-01-09 | ||
PCT/JP2010/000028 WO2010079740A1 (fr) | 2009-01-09 | 2010-01-05 | Appareil de traitement au plasma |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2010079740A1 true JPWO2010079740A1 (ja) | 2012-06-21 |
Family
ID=42316506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010545742A Pending JPWO2010079740A1 (ja) | 2009-01-09 | 2010-01-05 | プラズマ処理装置 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPWO2010079740A1 (fr) |
KR (1) | KR101303968B1 (fr) |
CN (1) | CN102272893A (fr) |
DE (1) | DE112010000818T8 (fr) |
TW (1) | TW201034526A (fr) |
WO (1) | WO2010079740A1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6863199B2 (ja) * | 2017-09-25 | 2021-04-21 | トヨタ自動車株式会社 | プラズマ処理装置 |
WO2019142812A1 (fr) * | 2018-01-19 | 2019-07-25 | 株式会社アルバック | Base de dispositif de chauffage et dispositif de traitement |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1079350A (ja) * | 1996-09-04 | 1998-03-24 | Kokusai Electric Co Ltd | プラズマ処理装置 |
JP2002270598A (ja) * | 2001-03-13 | 2002-09-20 | Tokyo Electron Ltd | プラズマ処理装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3598717B2 (ja) * | 1997-03-19 | 2004-12-08 | 株式会社日立製作所 | プラズマ処理装置 |
JP4593381B2 (ja) * | 2005-06-20 | 2010-12-08 | 東京エレクトロン株式会社 | 上部電極、プラズマ処理装置およびプラズマ処理方法 |
JP5022077B2 (ja) * | 2007-03-27 | 2012-09-12 | 株式会社アルバック | 成膜装置 |
JP4712004B2 (ja) | 2007-06-21 | 2011-06-29 | パナソニック株式会社 | 微小径光作製装置 |
-
2010
- 2010-01-05 JP JP2010545742A patent/JPWO2010079740A1/ja active Pending
- 2010-01-05 WO PCT/JP2010/000028 patent/WO2010079740A1/fr active Application Filing
- 2010-01-05 KR KR1020117016415A patent/KR101303968B1/ko active IP Right Grant
- 2010-01-05 DE DE112010000818T patent/DE112010000818T8/de not_active Ceased
- 2010-01-05 CN CN2010800039891A patent/CN102272893A/zh active Pending
- 2010-01-06 TW TW099100189A patent/TW201034526A/zh unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1079350A (ja) * | 1996-09-04 | 1998-03-24 | Kokusai Electric Co Ltd | プラズマ処理装置 |
JP2002270598A (ja) * | 2001-03-13 | 2002-09-20 | Tokyo Electron Ltd | プラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
TW201034526A (en) | 2010-09-16 |
KR101303968B1 (ko) | 2013-09-05 |
DE112010000818T5 (de) | 2012-05-31 |
CN102272893A (zh) | 2011-12-07 |
DE112010000818T8 (de) | 2012-08-09 |
KR20110089457A (ko) | 2011-08-08 |
WO2010079740A1 (fr) | 2010-07-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20131029 |