CN115341198B - Flat plate type PECVD equipment - Google Patents
Flat plate type PECVD equipment Download PDFInfo
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- CN115341198B CN115341198B CN202210783561.8A CN202210783561A CN115341198B CN 115341198 B CN115341198 B CN 115341198B CN 202210783561 A CN202210783561 A CN 202210783561A CN 115341198 B CN115341198 B CN 115341198B
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- Prior art keywords
- reaction chamber
- cathode panel
- ceramic plate
- substrate
- side wall
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a flat plate type PECVD device, which comprises a reaction chamber, a cathode panel, a jacking mechanism and a substrate, wherein the substrate is positioned on the jacking mechanism, the jacking mechanism and the substrate are both positioned in the reaction chamber, the cathode panel is arranged in the reaction chamber and is used as a cavity cover of the reaction chamber to form a real environment with the reaction chamber, a parallel discharge substrate is formed between the cathode panel and the substrate, and an insulating assembly is arranged between the side wall of the cathode panel and the reaction chamber and is used for avoiding discharge ignition of the side wall of the cathode panel and the side wall of the reaction chamber. The invention has the advantages of simple structure, low cost, high production efficiency, long service life and the like.
Description
Technical Field
The invention mainly relates to the technical field of solar cells, in particular to a flat plate type PECVD device.
Background
With the development of solar cell technology, the development of high-efficiency solar cells has become the research center of every large enterprise, wherein HJT cells have become a new technology for industrial research, and the most important point of the technology is that hybrid solar cells made of crystalline silicon substrates and amorphous silicon films have higher photoelectric conversion efficiency, better stability and lower cost compared with the traditional single/polycrystalline silicon cells.
For HJT batteries, the amorphous silicon film plays a key role in passivation and P-N junction formation, and directly influences the improvement of the conversion efficiency of HJT batteries, so that the preparation of a uniform and stable amorphous silicon film is a key ring for obtaining high-efficiency HJT batteries.
The existing flat plate type PECVD equipment is used as plasma enhanced chemical vapor deposition equipment and mainly comprises a reaction cavity, an upper cathode plate, a lower anode plate and the like, wherein the upper cathode plate is covered on the reaction cavity to form a cavity cover, the lower anode plate can move up and down through motor driving, a carrier plate is conveyed into the reaction cavity, and glow discharge is started after the carrier plate is lifted to a set position through the lower anode plate, and the structure mainly has the following technical problems:
1. the internal polar plate adjustment distance is large, so that the jacking time is too long, the beat time of equipment is influenced, and the productivity of a single cavity is small;
2. the cavity is large in air, the cavity utilization rate is low, so that the pumping speed of the selected vacuum pump is high, and the price is high;
3. the cathode plate is easy to discharge with the side wall of the chamber, so that the glow is unstable;
4. the vacuum chamber causes the material to expand and deform under the high temperature condition, and the rigid connection of the inner core parts occurs, so that the usability is reduced.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: aiming at the problems existing in the prior art, the invention provides the flat plate type PECVD equipment which has the advantages of simple structure, low cost and high production efficiency.
In order to solve the technical problems, the technical scheme provided by the invention is as follows:
the utility model provides a flat PECVD equipment, includes reaction chamber, cathode panel, climbing mechanism and substrate, the substrate is located climbing mechanism is last, climbing mechanism with the substrate is all located in the reaction chamber, cathode panel is built-in the reaction chamber and constitute real environment as reaction chamber's chamber lid and reaction chamber, form parallel discharge base plate between cathode panel and the substrate, be provided with insulating subassembly between cathode panel's lateral wall and the reaction chamber for avoid the lateral wall of cathode panel and the lateral wall of reaction chamber to discharge the spark.
As a further improvement of the above technical scheme:
the insulating component comprises a transverse ceramic plate and a vertical ceramic plate, wherein the transverse ceramic plate is transversely arranged, and one end of the transverse ceramic plate is connected with the side wall of the cathode panel; the vertical ceramic plates are vertically arranged, and the bottom ends of the vertical ceramic plates are arranged on the upper surface of the horizontal ceramic plates.
The bottom end of the vertical ceramic plate is provided with a convex column, the horizontal ceramic plate is provided with a groove, and the convex column is inserted into the groove to form mortise-tenon connection; or the bottom of perpendicular ceramic plate is provided with the recess, be provided with the projection on the horizontal ceramic plate, the projection inserts in with in the recess forms mortise-tenon joint.
The horizontal ceramic plate is provided with the slope in the one end of connecting the cathode panel, be provided with on the lateral wall of cathode panel with slope assorted chute, the slope is located in the chute.
A gap is arranged between the slope and the chute.
The vertical ceramic plate, the horizontal ceramic plate, the reaction chamber and the side wall of the cathode panel are enclosed to form a cavity, and an elastic insulating block is arranged in the cavity.
The elastic insulating block is made of polytetrafluoroethylene or epoxy resin materials.
And a gap is arranged between the elastic insulating block and the cavity.
The cathode panel comprises an aluminum panel, a cavity for filling process gas is arranged in the aluminum panel, and a plurality of small holes communicated with the cavity are formed in the bottom surface of the aluminum panel.
The substrate is a silicon wafer substrate.
Compared with the prior art, the invention has the advantages that:
(1) The invention adopts the form of the built-in electrode, the cathode panel is sunk into the vacuum chamber, and the running interval of the jacking mechanism can be greatly reduced, so that the equipment beat is greatly reduced, and the productivity (for the quasi-static film coating form of the heterojunction CVD equipment, the running interval of the jacking mechanism directly influences the equipment beat, namely the productivity) is improved.
(2) According to the invention, as a part of the structure of the cathode panel is sunk into the reaction chamber, the hollow cavity in the reaction chamber is correspondingly reduced, the reduction range of the hollow cavity is dependent on the sunk height, the more the sunk height is, the more the hollow cavity is correspondingly reduced, and the requirement on the pumping speed of the matched vacuum pump is also reduced, so that the purchase cost of the vacuum pump can be effectively reduced.
(3) The cathode panel is sunk into the reaction chamber, so that the discharge ignition condition of the cathode panel and the side wall of the reaction chamber is easy to occur, and the path of the ignition of the cathode panel and the side wall of the reaction chamber is blocked by adopting the mode that the insulating component is arranged on the side wall of the cathode panel, so that the discharge ignition working condition is avoided.
(4) The flat plate type PECVD equipment has the advantages of shortening the process beat rate, improving the productivity, reducing the manufacturing cost and prolonging the service life of parts due to the integral structure.
Drawings
FIG. 1 is a schematic diagram of a PECVD apparatus according to one embodiment of the invention.
Fig. 2 is an enlarged view of a portion of the cathode panel of the present invention.
Fig. 3 is an enlarged view of a portion of an insulation assembly of the present invention.
Legend description: 101. a gas introduction device; 201. a cathode panel; 2011. an insulating block gap; 2012. sinking height; 2013. a cathode panel sidewall; 2014. a cathode panel lower panel; 202. an elastic insulating block; 203. a vertical ceramic plate; 204. a transverse ceramic plate; 2041. a ramp; 301. a reaction chamber; 3011. a reaction chamber top wall; 3012. a reaction chamber sidewall; 401. a jacking mechanism; 402. a substrate.
Detailed Description
The invention is further described below with reference to the drawings and specific examples.
As shown in fig. 1 to 3, the flat-plate PECVD apparatus according to the embodiments of the present invention includes a reaction chamber 301, a cathode panel 201, a lifting mechanism and a substrate 402, wherein the substrate 402 is located on the lifting mechanism, the lifting mechanism and the substrate 402 are both located in the reaction chamber 301, the cathode panel 201 is built in the reaction chamber 301 and is used as a chamber cover of the reaction chamber 301 and constitutes a real environment with the reaction chamber, a parallel discharge substrate is formed between the cathode panel 201 and the substrate 402, and an insulation component is disposed between a side wall of the cathode panel and the reaction chamber 301, so as to prevent the cathode panel side wall 2013 and the reaction chamber side wall 3012 from being discharged and ignited.
The cathode panel 201 is sunk into the vacuum chamber by adopting the built-in electrode mode, so that the running interval of the jacking mechanism 401 can be greatly reduced, the equipment beat is greatly reduced, and the productivity (for the quasi-static film coating mode of the heterojunction CVD equipment, the running interval of the jacking mechanism 401 directly influences the equipment beat, namely the productivity) is improved.
In the invention, as a part of the structure of the cathode panel 201 is sunk into the reaction chamber 301, the hollow cavity in the reaction chamber 301 is correspondingly reduced, the reduction range of the hollow cavity depends on the sunk height, the more the sunk height 2012 is, the more the hollow cavity is correspondingly reduced, and the requirement on the pumping speed of the matched vacuum pump is also reduced, so that the purchasing cost of the vacuum pump can be effectively reduced.
In the invention, the cathode panel 201 is sunk into the reaction chamber 301, so that the discharge ignition condition of the cathode panel 201 and the side wall 3012 of the reaction chamber is easily caused, and the path of the ignition of the cathode panel 201 and the side wall 3012 of the reaction chamber is blocked by arranging the insulating component on the side wall 2013 of the cathode panel, thereby avoiding the discharge ignition condition.
The flat plate type PECVD equipment has the advantages of shortening the process beat rate, improving the productivity, reducing the manufacturing cost and prolonging the service life of parts due to the integral structure.
As shown in fig. 2 and 3, in one embodiment, the insulating assembly includes a horizontal ceramic plate 204 and a vertical ceramic plate 203, the horizontal ceramic plate 204 being laterally disposed and one end being connected to a sidewall of the female plate panel; the vertical ceramic plates 203 are vertically arranged, and the bottom ends are mounted to the upper surfaces of the horizontal ceramic plates 204. Specifically, the bottom end of the vertical ceramic plate 203 is provided with a convex column, the horizontal ceramic plate 204 is provided with a groove, and the convex column is inserted into the groove to form mortise-tenon connection; of course, a groove may be formed at the bottom end of the vertical ceramic plate 203, and a protrusion may be formed on the horizontal ceramic plate 204 and inserted into the groove to form a mortise-tenon connection.
The vertical ceramic plate 203 is made of ceramic material, and is mainly used for preventing the discharge ignition phenomenon of the cathode panel side wall 2013, the reaction chamber top wall 3011 and the reaction chamber side wall. The contact between the vertical ceramic plate 203 and the horizontal ceramic plate 204 adopts a mortise-tenon structure, so that the air flow can be effectively prevented from flowing into the inner space (space where the elastic insulating element is located) of the vertical ceramic plate 203 and the horizontal ceramic plate 204 through the gap between the vertical ceramic plate 203 and the horizontal ceramic plate 204, and the residual process gas in the space can be effectively prevented.
In one embodiment, as shown in fig. 3, a slope 2041 is formed on the end of the transverse ceramic plate 204 connected to the cathode panel 201, a chute matching with the slope 2041 is formed on the cathode panel sidewall 2013, the slope 2041 is located in the chute, and a gap is formed between the slope 2041 and the chute, wherein the gap is determined according to the expansion coefficient of the cathode panel 201. The horizontal ceramic plate 204 inserts the slope 2041 partially into the inclined groove of the cathode panel 201, which mainly serves to prevent the cathode panel 201 from being subjected to the tip discharge, thereby affecting the stability of the overall glow discharge, and at the same time, can effectively block the smooth flow of the gas into the inner space (space where the elastic insulating member is located), thereby allowing the occurrence of the residual process gas in the space.
As shown in fig. 2 and 3, in a specific embodiment, a cavity is formed by enclosing the vertical ceramic plate 203, the horizontal ceramic plate 204, the reaction chamber 301 and the cathode panel sidewall 2013, and an elastic insulating block 202 is disposed in the cavity; wherein the elastic insulating block 202 is made of polytetrafluoroethylene or epoxy resin and the like. The elastic insulating block 202 prevents the cathode panel side wall 2013, the reaction chamber top wall 3011 and the reaction chamber side wall from generating discharge ignition phenomenon, thereby causing instability of the whole glow discharge; another effect is to avoid the rigid contact between the cathode panel 201 and the vertical ceramic plate 203 due to the high-temperature expansion, while the vertical ceramic plate 203 has brittle properties and long processing period, and is easy to fracture under the rigid contact, thereby causing the cost of equipment spare parts to rise, and meanwhile, the vertical ceramic plate 203 is broken in the reaction chamber 301, so that the effect of the coating process is easily affected by the powder layer.
In addition, a certain gap (reserved material thermal expansion space) exists between the elastic insulating block 202 and the vertical ceramic plate 203, between the elastic insulating block and the cathode panel 201 and between the elastic insulating block and the horizontal ceramic plate 204, and the gap size is determined according to the size of the cathode panel 201 and the expansion coefficient of the elastic insulating material, and the gap can be between 3 mm and 15 mm.
Since the cathode panel 201 is mainly made of aluminum material, the temperature in the reaction chamber 301 during the thin film deposition process is as high as several hundred degrees, and thus thermal expansion of the aluminum plate is induced, resulting in rigid contact of the cathode panel 201 with other components, which may seriously affect the integrity of the cathode panel 201. The elastic insulating blocks 202 are arranged and arranged in the hollow mode on the side wall 2013 of the cathode panel, the characteristic that the elastic insulating blocks 202 can be deformed flexibly due to heating is utilized, and the reserved space is arranged in the hollow mode, so that the cathode panel 201 is prevented from being expanded and rigidly contacted with other parts under the condition of heating, and the service life of the cathode panel 201 is prolonged.
Through the above structural arrangement, the elastic insulating blocks 202, the vertical ceramic plates 203 and the horizontal ceramic plates 204 are uniformly distributed around the periphery of the portion of the cathode panel 201 sinking in the reaction chamber 301, so that the side wall of the cathode panel 201 exposed in the reaction chamber 301 is wrapped, and only the lower panel is exposed in the reaction chamber 301 as a discharge panel, thereby improving the working reliability thereof.
In one embodiment, the cathode panel 201 comprises a square aluminum panel (e.g., 2 x 2 m) with a chamber for filling process gas therein, and a plurality of small holes communicating with the chamber are formed in the bottom surface of the aluminum panel. Specifically, the cathode panel 201 is provided with a gas introducing device 101, the gas introducing device 101 is provided with a plurality of gas inlets, process gas is conveyed to the gas introducing device 101 from the gas inlets, flows into a chamber of the cathode panel 201 through the gas introducing device 101, and is then uniformly sprayed into the reaction chamber 301 through small holes to perform a coating process; the gas introduction device 101 is connected to a power supply at the same time, and is used as a power supply feed point to introduce a radio frequency power supply to the cathode panel 201, and finally the cathode panel 201 and the silicon wafer substrate 402 of the jacking mechanism 401 form a parallel plate capacitive discharge structure.
In specific work, the lifting mechanism can adjust the height in the reaction chamber 301, the silicon wafer substrate 402 is arranged on the lifting mechanism, and forms a parallel discharge substrate with the cathode panel 201, in the PECVD mass production process, the silicon wafer substrate 402 is transmitted into the reaction chamber 301, and is lifted to a set height through the lifting mechanism, and then the process is started, so that the running height of the lifting mechanism directly influences the beat of the whole mass production of the equipment, and the productivity of the equipment is influenced; the cathode panel 201 adopts a sinking structure form, and can effectively reduce the lifting height of the lifting mechanism, thereby reducing the running time of the lifting mechanism, reducing the takt time and improving the productivity of equipment. The sinking height 2012 is 50mm, so that the lifting height can be shortened by 50%, and the productivity can be improved by more than 20%.
The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above examples, and all technical solutions belonging to the concept of the present invention belong to the protection scope of the present invention. It should be noted that modifications and adaptations to the invention without departing from the principles thereof are intended to be within the scope of the invention as set forth in the following claims.
Claims (8)
1. The flat plate type PECVD device is characterized by comprising a reaction chamber (301), a cathode panel (201), a jacking mechanism (401) and a substrate (402), wherein the substrate (402) is positioned on the jacking mechanism (401), the jacking mechanism (401) and the substrate (402) are both positioned in the reaction chamber (301), the cathode panel (201) is arranged in the reaction chamber (301) and is used as a cavity cover of the reaction chamber (301) to form a real environment with the reaction chamber (301), a parallel discharge substrate is formed between the cathode panel (201) and the substrate (402), and an insulation assembly is arranged between the side wall of the cathode panel (201) and the reaction chamber (301) and is used for avoiding discharge ignition of the side wall of the cathode panel (201) and the side wall of the reaction chamber (301);
the insulation assembly comprises a horizontal ceramic plate (204) and a vertical ceramic plate (203), wherein the horizontal ceramic plate (204) is transversely arranged, and one end of the horizontal ceramic plate is connected with the side wall of the cathode panel (201); the vertical ceramic plates (203) are vertically arranged, and the bottom ends of the vertical ceramic plates are arranged on the upper surface of the horizontal ceramic plates (204);
the horizontal ceramic plate (204) is provided with a slope (2041) at one end connected with the cathode panel (201), a chute matched with the slope (2041) is arranged on the side wall of the cathode panel (201), and the slope (2041) is positioned in the chute.
2. The flat plate type PECVD device according to claim 1, wherein the bottom end of the vertical ceramic plate (203) is provided with a convex column, the horizontal ceramic plate (204) is provided with a groove, and the convex column is inserted into the groove to form mortise-tenon connection; or the bottom of perpendicular ceramic plate (203) is provided with the recess, be provided with the projection on horizontal ceramic plate (204), the projection inserts in order to form mortise-tenon joint in the recess.
3. The flat plate PECVD apparatus of claim 1, wherein a gap is provided between the ramp (2041) and the chute.
4. The flat plate type PECVD apparatus as claimed in claim 1 or 2, wherein the vertical ceramic plate (203), the horizontal ceramic plate (204), the reaction chamber (301) and the side wall of the cathode panel (201) are enclosed to form a cavity, and an elastic insulating block (202) is disposed in the cavity.
5. The flat plate PECVD apparatus of claim 4, wherein the elastic insulating block (202) is made of polytetrafluoroethylene or epoxy material.
6. The flat plate PECVD apparatus of claim 4, wherein a gap is provided between the elastic insulating block (202) and the cavity.
7. A flat plate PECVD apparatus according to claim 1, 2 or 3, wherein the cathode panel (201) comprises an aluminum panel, wherein a chamber for filling process gas is provided in the aluminum panel, and wherein a bottom surface of the aluminum panel is provided with a plurality of small holes communicating with the chamber.
8. A flat plate PECVD apparatus according to claim 1, 2 or 3, wherein the substrate (402) is a silicon wafer substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210783561.8A CN115341198B (en) | 2022-07-05 | 2022-07-05 | Flat plate type PECVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210783561.8A CN115341198B (en) | 2022-07-05 | 2022-07-05 | Flat plate type PECVD equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115341198A CN115341198A (en) | 2022-11-15 |
| CN115341198B true CN115341198B (en) | 2023-08-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210783561.8A Active CN115341198B (en) | 2022-07-05 | 2022-07-05 | Flat plate type PECVD equipment |
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| CN115341198A (en) | 2022-11-15 |
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