PL2396804T3 - Urządzenie do obróbki plazmowej dużej powierzchni - Google Patents

Urządzenie do obróbki plazmowej dużej powierzchni

Info

Publication number
PL2396804T3
PL2396804T3 PL09786305T PL09786305T PL2396804T3 PL 2396804 T3 PL2396804 T3 PL 2396804T3 PL 09786305 T PL09786305 T PL 09786305T PL 09786305 T PL09786305 T PL 09786305T PL 2396804 T3 PL2396804 T3 PL 2396804T3
Authority
PL
Poland
Prior art keywords
plasma processing
large area
area plasma
processing
plasma
Prior art date
Application number
PL09786305T
Other languages
English (en)
Inventor
Philippe Guittienne
Original Assignee
Helyssen S A R L
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Helyssen S A R L filed Critical Helyssen S A R L
Publication of PL2396804T3 publication Critical patent/PL2396804T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H01J37/32256—Tuning means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H01J37/32284—Means for controlling or selecting resonance mode

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
PL09786305T 2009-02-10 2009-02-10 Urządzenie do obróbki plazmowej dużej powierzchni PL2396804T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/IB2009/050549 WO2010092433A1 (en) 2009-02-10 2009-02-10 Apparatus for large area plasma processing
EP09786305.4A EP2396804B1 (en) 2009-02-10 2009-02-10 Apparatus for large area plasma processing

Publications (1)

Publication Number Publication Date
PL2396804T3 true PL2396804T3 (pl) 2014-08-29

Family

ID=41040791

Family Applications (1)

Application Number Title Priority Date Filing Date
PL09786305T PL2396804T3 (pl) 2009-02-10 2009-02-10 Urządzenie do obróbki plazmowej dużej powierzchni

Country Status (10)

Country Link
US (1) US10242843B2 (pl)
EP (1) EP2396804B1 (pl)
JP (1) JP5506826B2 (pl)
CN (1) CN102318034B (pl)
BR (1) BRPI0924314B1 (pl)
CA (1) CA2752183C (pl)
ES (1) ES2475265T3 (pl)
PL (1) PL2396804T3 (pl)
RU (1) RU2507628C2 (pl)
WO (1) WO2010092433A1 (pl)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10388493B2 (en) * 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
US10861679B2 (en) * 2014-09-08 2020-12-08 Tokyo Electron Limited Resonant structure for a plasma processing system
EP3292559B1 (en) * 2015-05-04 2019-08-07 Ecole Polytechnique Federale de Lausanne (EPFL) Method, measurement probe and measurement system for determining plasma characteristics
ES2894648T3 (es) * 2015-07-03 2022-02-15 Tetra Laval Holdings & Finance Película o lámina de barrera y material de envasado laminado que comprende la película o lámina y el recipiente de envasado preparado a partir del mismo
DE102016107400B4 (de) 2015-12-23 2021-06-10 VON ARDENNE Asset GmbH & Co. KG Induktiv gekoppelte Plasmaquelle und Vakuumprozessieranlage
JP7135529B2 (ja) * 2018-07-19 2022-09-13 日新電機株式会社 プラズマ処理装置

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
JPH0737697A (ja) * 1993-07-22 1995-02-07 Hitachi Ltd プラズマ発生装置
JP2641390B2 (ja) * 1994-05-12 1997-08-13 日本電気株式会社 プラズマ処理装置
US5685942A (en) * 1994-12-05 1997-11-11 Tokyo Electron Limited Plasma processing apparatus and method
US5589737A (en) * 1994-12-06 1996-12-31 Lam Research Corporation Plasma processor for large workpieces
US5643639A (en) * 1994-12-22 1997-07-01 Research Triangle Institute Plasma treatment method for treatment of a large-area work surface apparatus and methods
US6209480B1 (en) * 1996-07-10 2001-04-03 Mehrdad M. Moslehi Hermetically-sealed inductively-coupled plasma source structure and method of use
JP3646901B2 (ja) * 1996-08-26 2005-05-11 株式会社アルバック プラズマ励起用アンテナ、プラズマ処理装置
RU2124248C1 (ru) * 1996-09-20 1998-12-27 Али Гемиранович Вологиров Способ создания однородной плазмы с рабочей зоной большой площади на основе разряда в вч-свч диапазонах и устройство для его осуществления (варианты)
JPH11195499A (ja) * 1997-12-29 1999-07-21 Anelva Corp プラズマ処理装置
JPH11317299A (ja) * 1998-02-17 1999-11-16 Toshiba Corp 高周波放電方法及びその装置並びに高周波処理装置
AU726151B2 (en) 1998-04-08 2000-11-02 Mitsubishi Heavy Industries, Ltd. Plasma CVD apparatus
JP2961103B1 (ja) 1998-04-28 1999-10-12 三菱重工業株式会社 プラズマ化学蒸着装置
GB2363913B (en) * 1999-05-07 2003-09-10 Furuno Electric Co Circularly polarised antennas
US6331754B1 (en) * 1999-05-13 2001-12-18 Tokyo Electron Limited Inductively-coupled-plasma-processing apparatus
KR100338057B1 (ko) * 1999-08-26 2002-05-24 황 철 주 유도 결합형 플라즈마 발생용 안테나 장치
JP3377773B2 (ja) * 2000-03-24 2003-02-17 三菱重工業株式会社 放電電極への給電方法、高周波プラズマ発生方法および半導体製造方法
KR20010108968A (ko) * 2000-06-01 2001-12-08 황 철 주 플라즈마 공정장치
JP2003158078A (ja) * 2001-11-20 2003-05-30 Mitsubishi Heavy Ind Ltd シリコン半導体の形成方法
US7569154B2 (en) * 2002-03-19 2009-08-04 Tokyo Electron Limited Plasma processing method, plasma processing apparatus and computer storage medium
US6842147B2 (en) * 2002-07-22 2005-01-11 Lam Research Corporation Method and apparatus for producing uniform processing rates
EP1480250A1 (en) * 2003-05-22 2004-11-24 HELYSSEN S.à.r.l. A high density plasma reactor and RF-antenna therefor
JP2005158564A (ja) * 2003-11-27 2005-06-16 Matsushita Electric Ind Co Ltd プラズマ励起用コイル、プラズマ励起装置、及びプラズマ処理装置
US7845310B2 (en) * 2006-12-06 2010-12-07 Axcelis Technologies, Inc. Wide area radio frequency plasma apparatus for processing multiple substrates
JP5479867B2 (ja) * 2009-01-14 2014-04-23 東京エレクトロン株式会社 誘導結合プラズマ処理装置

Also Published As

Publication number Publication date
CA2752183A1 (en) 2010-08-19
ES2475265T3 (es) 2014-07-10
RU2011137425A (ru) 2013-03-20
JP2012517663A (ja) 2012-08-02
WO2010092433A1 (en) 2010-08-19
RU2507628C2 (ru) 2014-02-20
CA2752183C (en) 2018-12-11
CN102318034B (zh) 2014-07-23
EP2396804A1 (en) 2011-12-21
US20110308734A1 (en) 2011-12-22
JP5506826B2 (ja) 2014-05-28
US10242843B2 (en) 2019-03-26
EP2396804B1 (en) 2014-03-26
CN102318034A (zh) 2012-01-11
BRPI0924314B1 (pt) 2020-02-18

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